Method for testing divergence angle of neutron Soller collimator

The invention discloses a method for testing divergence angle of a neutron Soller collimator. The method includes the steps of selecting a Gaussian function to describe an angular divergence distribution function of a neutron source and an angular divergence response function of a neutron transmission collimator, subjecting the angular divergence distribution function of the neutron source and the angular divergence response function of the neutron transmission collimator to mathematical integration to form a rocking curve expression; performing experimental measurement to obtain experimental data of rocking curves of neutron intensity changing with the rocking angle after neutrons pass the to-be-tested neutron Soller collimator and a reference neutron Soller collimator; subjecting the experimental data of the rocking curves to data fitting through the rocking curve expression so as to obtain a rocking curve standard error; calculating a divergence angle of the to-be-tested neutron Soller ...

Methods To Grow Low Resistivity Metal Containing Films

The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film. 1. A method of forming a metal film , the method comprising:exposing a substrate surface to a metal precursor, the metal precursor having a metal with a first oxidation state;exposing the substrate surface to a reducing agent to decrease the first oxidation state of the metal to a second oxidation state; andexposing the substrate surface to a reactant to form a metal-containing film comprising one or more of a metal nitride, metal carbide, metal silicide or metal oxide.2. The method of claim 1 , wherein the metal precursor comprises a metal halide having the general formula MXR claim 1 , where M is a metal atom claim 1 , each X is a halogen independently selected from F claim 1 , Cl claim 1 , Br and I claim 1 , each R is independently selected from C1-C6 alkyl claim 1 , N-donor ligands claim 1 , CO and cyclopentadienyl groups claim 1 , a is in the range of 0 to 6 and b is in the range of 0 to 6.3. The method of claim 2 , wherein the metal atom is selected from the group III through group XIV metals of the periodic table.4. The method of claim 3 , wherein the metal atom is selected from the group consisting of titanium claim 3 , gallium or tantalum.5. The method of claim 4 , wherein the metal precursor comprises one or more of TiCl claim 4 , TaClor GaCl.6. The method of claim 1 , wherein the reducing agent comprises one or more of a cyclic 1 claim 1 ,4-diene claim 1 , a silane claim 1 , a carbosilane claim 1 , a borane claim 1 , an amino borane claim 1 , a tin hydride claim 1 , an aluminum hydride or a tin (II) compound.10. The method of claim 9 , wherein the metal precursor comprises a metal ...

CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY

A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.

FORMING OF OFF-AXIS NULL MAGNETIC FIELD LOCUS FOR ENSURING IMPROVED UNIFORMITY IN PLASMA DEPOSITION AND ETCHING USING PHYSICAL VAPOR DEPOSITION

PURPOSE: Forming of off-axis null magnetic field locus for ensuring improved uniformity in plasma deposition and etching is provided to enable a material layer to be deposited on a substrate using physical vapor deposition. CONSTITUTION: A device for depositing or etching a material layer on a substrate comprises a process chamber, a plurality of co-axial magnetic field sources and a substrate support. The process chamber is used for forming charged species. The magnetic filed sources are used for forming null magnetic field locus in an area comprising the charged species. The substrate support fixes the substrate during deposition or etching. The null magnetic field locus is radially offset from a central shaft, which is formed by the central part of the co-axial sources. COPYRIGHT KIPO 2011 ...

Methods for enhancing selectivity in SAM-based selective deposition

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Methods Of Selective Atomic Layer Deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Continuous plasma and RF bias to regulate damage in a substrate processing system

Methods of processing a substrate include supplying process gas to a processing chamber including the substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.

WAFER TREATMENT FOR ACHIEVING DEFECT-FREE SELF-ASSEMBLED MONOLAYERS

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described. 1. A processing chamber comprising:a pedestal positioned within the processing chamber and comprising a heater, the pedestal configured to hold a substrate;an inlet configured to input one or more process gases to the processing chamber; anda control system coupled to the processing chamber, the control system comprising: a first configuration to heat the substrate to a first temperature, a second configuration to expose the substrate to one or more of a plasma from a plasma source or radicals from a radical source, a third configuration to control a flow of an activating agent to the substrate to form hydroxyl terminations thereon, and a fourth configuration to expose the substrate to multiple cycles of exposure to a SAM molecule, heating the substrate and exposure to the activating agent.2. The processing chamber of claim 1 , wherein the activating agent comprises water vapor provided by a remote plasma source.3. The processing chamber of claim 1 , wherein the pedestal comprises an electrostatic chuck and cooling/heating base.4. The processing chamber of claim 3 , wherein the electrostatic chuck comprises an AlO claim 3 , YOor a ceramic material.5. The processing chamber of claim 3 , wherein the pedestal further comprises a DC electrode and the processing chamber further comprising a DC power supply connected to the DC ...

MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AND METHODS OF FORMATION THEREOF

Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer. 1. A semiconductor device having a multi-threshold voltage structure , comprising:a substrate;a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer;a lanthanum nitride layer deposited atop the high-k dielectric layer;an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; anda gate electrode layer atop the lanthanum nitride layer.2. The semiconductor device of claim 1 , wherein the lanthanum nitride layer has a thickness of about 3 angstroms.3. The semiconductor device of claim 1 , wherein the lanthanum nitride layer is about 10 to about 50 atomic percent nitrogen and the balance lanthanum.4. The semiconductor device of claim 1 , wherein the high-k dielectric layer is hafnium oxide or hafnium silicate.5. The semiconductor device of claim 1 , wherein the gate electrode layer is titanium nitride.6. A method of forming a semiconductor device having a multi-threshold voltage structure claim 1 , comprising:depositing a lanthanum nitride layer atop a substrate comprising a gate dielectric layer, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the ...

High-speed neutron photographing device

The invention relates to a neutron imaging technology, in particular to a high-speed neutron photographing device which structurally comprises a neutron conversion cavity and a detection cavity, wherein the neutron conversion cavity is provided with a scintillation screen for converting a neutron image into a visible image, and a plane mirror for refracting visible light to the detection cavity is arranged at the rear side of the scintillation screen; the detection cavity is internally provided with a lens and a high-speed CMOS (Complementary Metal-Oxide-Semiconductor Transistor) camera; the lens and the high-speed CMOS camera are wholly arranged in a shielding lead box, the lens faces to a visible light incident direction, and a translation platform capable of driving the lens and the high-speed CMOS camera to move wholly is arranged in the detection cavity. The high-speed neutron photographing device provided by the invention can respond to different view field ranges and resolution requirements ...

ANNEALING PROCESSES TO STABILIZE NICKEL-CONTAINING FILMS

Exemplary methods of forming nickel-containing materials may include forming a layer of a nickel-and-oxygen-containing material overlying a substrate. The nickel-and-oxygen-containing material may be characterized by a carbon content. The methods may also include annealing the nickel-containing material with a carbon-containing precursor at a temperature greater than or about 100° C. The carbon content within the nickel-and-oxygen-containing material may be maintained during the annealing.

Methods and apparatus for high reflectivity aluminum layers

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Methods for selective deposition using self-assembled monolayers

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Method for forming a layer

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

METHOD FOR FORMING A LAYER

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved. 1. A device , comprising:a first material having a first surface;a second material having a second surface;a mask disposed on the first surface, the mask having an edge portion extending over the second surface; anda layer disposed between the edge portion and the second surface, the layer being in contact with the edge portion and the second surface.2. The device of claim 1 , wherein the first material comprises an electrically conductive material claim 1 , and the second material comprises a dielectric material.3. The device of claim 2 , wherein the first material comprises a metal claim 2 , and the second material comprises silicon carbide claim 2 , silicon oxycarbide claim 2 , silicon nitride claim 2 , tungsten carbide claim 2 , or tungsten oxide.4. The device of claim 3 , wherein the mask comprises a high-k dielectric material.5. The device of claim 4 , wherein the layer is distinct from the mask.6. The device of claim 4 , wherein the mask comprises hafnium oxide claim 4 , zirconium oxide claim 4 , aluminum oxide claim 4 , or titanium oxide.7. The device of claim 6 , wherein the layer comprises hafnium oxide claim 6 , zirconium oxide claim 6 , aluminum oxide claim 6 , or titanium oxide.8. The device of ...

Method for forming a layer

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

Methods for forming metal organic tungsten for middle of the line (MOL) applications

Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

High density plasma etchback process for advanced metallization applications

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

SELECTIVE ALUMINUM OXIDE FILM DEPOSITION

Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

Methods to grow low resistivity metal containing films

The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) METAL GATE MATERIALS USING ATOMIC LAYER DEPOSITION (ALD) PROCESSES WITH METAL BASED PRECURSORS

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Cooling water flow dispenser for accelerators

The invention discloses a novel structure of a distribution device of flow rate of cooling water for accelerators, a core element of which is a water flow adjusting device which comprises a welding base, a throttle sheet, a sealing 'O' shape ring and a welding connection tube, wherein the throttle sheet is arranged in a groove at one end of the welding base and is sealed by the sealing 'O' shape ring. The water flow adjusting device adjusts the flow rate of the cooling water by adjusting the size of the pore diameter of the throttle sheet, thereby reducing the volume of the distribution device of the flow rate of the cooling water at a certain extent and saving space under the condition of guaranteeing an invariable flow rate.

METHODS AND APPARATUS FOR HIGH REFLECTIVITY ALUMINUM LAYERS

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Methods of forming nickel-containing films

Exemplary methods of forming a nickel-containing film may include simultaneously flowing a nickel-containing precursor and an oxygen-containing precursor into a semiconductor processing chamber. The methods may include forming a first layer of a nickel-and-oxygen-containing film overlying a substrate housed within the semiconductor processing chamber. The methods may include halting the simultaneous flow. The methods may include flowing a first precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber. The methods may include flowing a second precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber. The second precursor may be different from the first precursor. The methods may also include forming a second layer of the nickel-and-oxygen-containing film overlying the first layer of the nickel-and-oxygen-containing film.

HIGH DENSITY PLASMA ETCHBACK PROCESS FOR ADVANCED METALLIZATION APPLICATIONS

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof

Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Wafer treatment for achieving defect-free self-assembled monolayers

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS

Selective Deposition Defects Removal By Chemical Etch

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

Selective aluminum oxide film deposition

Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

Selective etch of metal nitride films

Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

Low Thickness Dependent Work-Function nMOS Integration For Metal Gate

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Low thickness dependent work-function nMOS integration for metal gate

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Methods of selective atomic layer deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Selective deposition defects removal by chemical etch

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY

A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.

Methods for Enhancing Selectivity in SAM-Based Selective Deposition

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film. 1. A method of selective deposition comprising:providing a patterned substrate comprising a first metal surface and a second dielectric surface;exposing the patterned substrate to a SAM molecule to form a protected second surface and a carbonized layer on the first surface;exposing the patterned substrate to an oxygenating agent to remove the carbonized layer from the first surface; andexposing the substrate to a plurality of reactants separately to selectively deposit a film on the first surface over the protected second surface.2. The method of claim 1 , wherein the first metal surface comprises one or more of ruthenium or cobalt.3. The method of claim 1 , wherein the patterned substrate is exposed to the SAM molecule by CVD claim 1 , ALD or immersion.4. The method of claim 1 , wherein the oxygenating agent consists essentially of oxygen.5. The method of claim 4 , wherein the oxygenating agent does not comprise a plasma.6. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature in the range of about 100° C. to about 350° C.7. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs for a period in the range of about 30 seconds to about 10 minutes.8. The method of claim 1 , wherein exposing the substrate to an oxygenating agent occurs at a temperature of about 275° C. for a period of about 1 minute.9. The method of claim 1 , wherein ...

Methods for forming metal organic tungsten for middle of the line (mol) applications

Methods And Apparatus For Cryogenic Gas Stream Assisted SAM-Based Selective Deposition

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described. 1. A method comprising:providing a substrate comprising a first surface and a second surface;exposing the substrate to a SAM precursor to selectively form a SAM layer on the first surface over the second surface, the SAM layer containing defects that expose portions of the first surface;depositing a film on the second surface and exposed portions of the first surface, the film having a first average thickness on the first surface and a second average thickness on the second surface, the first average thickness being less than the second average thickness; andexposing the substrate to a cryogenic gas stream to remove an amount of the film from the first surface.2. The method of claim 1 , wherein the first surface is on a dielectric material and the second surface is on a conductive material.3. The method of claim 2 , wherein the dielectric material comprises one or more of silicon oxide claim 2 , silicon nitride or silicon carbide.4. The method of claim 2 , wherein the conductive material comprises one or more of ruthenium claim 2 , copper or cobalt.5. The method of claim 1 , wherein the film comprises a metal oxide.6. The method of claim 1 , wherein the cryogenic gas stream comprises one or more of CO claim 1 , N claim 1 , Ar or Ne.7. The method of claim 1 , wherein the cryogenic gas stream comprises an aerosol having particles of cryogenic gas clusters claim 1 , the particles having a root mean square velocity greater than or equal to about 340 m/s.8. The method of claim 7 , wherein the root mean square velocity is ...

Reverse Selective Deposition

Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize a blocking compound to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance. Some embodiments utilize an unsaturated hydrocarbon as a blocking compound. Some embodiments utilize a triazole as a blocking compound.

METHODS OF FORMING NICKEL-CONTAINING FILMS

Exemplary methods of forming a nickel-containing film may include simultaneously flowing a nickel-containing precursor and an oxygen-containing precursor into a semiconductor processing chamber. The methods may include forming a first layer of a nickel-and-oxygen-containing film overlying a substrate housed within the semiconductor processing chamber. The methods may include halting the simultaneous flow. The methods may include flowing a first precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber. The methods may include flowing a second precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber. The second precursor may be different from the first precursor. The methods may also include forming a second layer of the nickel-and-oxygen-containing film overlying the first layer of the nickel-and-oxygen-containing film. 1. A method of forming a nickel-containing film , the method comprising:simultaneously flowing a nickel-containing precursor and an oxygen-containing precursor into a semiconductor processing chamber;forming a first layer of a nickel-and-oxygen-containing film overlying a substrate housed within the semiconductor processing chamber;halting the simultaneous flow;flowing a first precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber;flowing a second precursor selected from the nickel-containing precursor and the oxygen-containing precursor into the semiconductor processing chamber, wherein the second precursor is different from the first precursor; andforming a second layer of the nickel-and-oxygen-containing film overlying the first layer of the nickel-and-oxygen-containing film.2. The method of forming a nickel-containing film of claim 1 , further comprising claim 1 , subsequent flowing the first precursor:halting flow of ...

METHODS OF TREATING A SUBSTRATE TO FORM A LAYER THEREON FOR APPLICATION IN SELECTIVE DEPOSITION PROCESSES

Methods for treating a substrate including: contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface. Selective deposition methods are also disclosed. 1. A method of treating a substrate comprising:contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface.2. The method of claim 1 , wherein the first small-molecule monolayer (SMM) precursor and the second SMM precursor are different claim 1 , wherein the first SMM has two or more reactive head groups claim 1 , and wherein the second SMM precursor has one reactive head group.3. The method of claim 1 , wherein the first self-assembled monolayer (SAM) precursor and the second SAM precursor are different claim 1 , wherein the first SAM precursor has two or more reactive head groups claim 1 , and wherein the second SAM precursor has one reactive head group.4. The method of claim 1 , wherein the first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) claim 1 , the co-reactant claim 1 , and second SMM precursor or second SAM precursor are sequentially exposed to the substrate.5. The method of claim 1 , wherein the top surface comprises a first surface and a second surface and the first layer is formed on the second surface in amount sufficient to block growth thereon during a subsequent film deposition.6. The method of claim 5 , further comprising depositing a film on the first surface selectively over the second surface.7. The method of claim 6 , further comprising removing the first layer from the second surface.8. A selective deposition method comprising:contacting a substrate with a first ...

Methods for selective deposition using self-assembled monolayers

Cooling water flow dispenser for accelerators

The invention discloses a novel structure of a distribution device of flow rate of cooling water for accelerators, a core element of which is a water flow adjusting device which comprises a welding base, a throttle sheet, a sealing 'O' shape ring and a welding connection tube, wherein the throttle sheet is arranged in a groove at one end of the welding base and is sealed by the sealing 'O' shape ring. The water flow adjusting device adjusts the flow rate of the cooling water by adjusting the size of the pore diameter of the throttle sheet, thereby reducing the volume of the distribution device of the flow rate of the cooling water at a certain extent and saving space under the condition of guaranteeing an invariable flow rate.

Substrate processing method

Selective deposition defects removal by chemical etch

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY

A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.

Wafer Treatment For Achieving Defect-Free Self-Assembled Monolayers

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described. 1. A processing method comprising:providing a substrate with an exposed first material and an exposed second material;exposing the substrate to a pre-clean process, the pre-clean process comprising heating the substrate to a first temperature, cleaning the substrate of contaminants and activating a surface of the first material to promote formation of a self-assembled monolayer (SAM) on the exposed first material;forming a SAM on the exposed first material at a second temperature by exposing the substrate to a plurality of cycles of a SAM formation process followed by a final exposure to a SAM molecule, each cycle of the SAM formation process comprising exposing the substrate to the SAM molecule followed by heating the substrate and reactivation of the surface of the first material; andselectively depositing a film on the exposed second material.2. The processing method of claim 1 , wherein the pre-clean process occurs in a pre-clean chamber.3. The processing method of claim 2 , wherein the first temperature is in the range of about 200° C. to about 350° C.4. The processing method of claim 2 , wherein the pre-clean process further comprises exposing the substrate to one or more of plasma or radicals.5. The processing method of claim 2 , wherein the pre-clean chamber has a pressure in the range of about 1 to about 100 Torr.6. ...

Low thickness dependent work-function nMOS integration for metal gate

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Methods and apparatus for N-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

METHODS FOR SELECTIVE DEPOSITION USING SELF ASSEMBLED MONOLAYERS

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface. 1. A method of selectively depositing a layer atop a substrate having a metal surface and a dielectric surface , comprising:(a) contacting the metal surface with one or more metal halides to form an exposed metal surface;(b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and(c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.2. The method of claim 1 , wherein contacting the metal surface with one or more metal halides is performed at a first temperature of about 300 to about 400 degrees Celsius.3. The method of claim 1 , wherein contacting the metal surface with one or more metal halides is performed at a pressure in an amount of 1 to 15 Torr.4. The method of claim 1 , wherein contacting the metal surface with one or more metal halides is performed for 5 to 20 minutes.5. The method of claim 1 , wherein the one or more metal halides is a gas.6. The method of claim 1 , wherein the one or more metal halides is a metal chloride comprising WClx claim 1 , NbClx claim 1 , RuClx claim 1 , MoClx claim 1 , or combinations thereof claim 1 , wherein x is an integer.7. The method of claim 1 , wherein the contacting the metal surface with one or more metal halides is performed in an oxygen-free chamber.8. The method of claim 1 ...

Selective etch of metal nitride films

Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN

Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds particular use in ionized physical vapor deposition (iPVD) gapfill applications. Plasma flux ion energy and E/D ratio can be controlled by modifying the grounding path (grounding surface's location, shape and/or area). Control of plasma properties in this way can reduce or eliminate reliance on conventional costly and complicated RF systems for plasma control. For a high density plasma source, the ionization fraction and ion energy can be high enough that self-sputtering may occur even without any RF bias. And unlike RF induced sputtering, self-sputtering has narrow ion energy distribution, which provides better process controllability and larger process window for integration.

Special-purposed nuclear fuel element transfer vessel for neutron radiography nondestructive testing

The invention relates to a testing technology of nuclear reactor fuel rods, in particular to a special-purposed nuclear fuel element transfer vessel for neutron radiography nondestructive testing. The vessel comprises a cylinder body with a shielding function; an upper cover is arranged at the upper end of the cylinder body; an opening is arranged at the bottom of the cylinder body; a shielding block is arranged inside the opening; and the inner side of the upper cover is connected with a mechanical device which is used for controlling the up and down movement of a nuclear fuel element. The special-purposed nuclear fuel element transfer vessel can enable the fuel element to be in a space with a shielding effect when being used for transferring the element, and enables transfer operation to be safer and more reliable; meanwhile, when the neutron radiography testing is carried out on the fuel element, the mechanical device in the transfer vessel can drive the fuel element to move up anddown ...

Commodity comparison method, server, client side and e-commerce system

The embodiment of the invention provides a commodity comparison method, a server, a client side and an e-commerce system. The method comprises the following steps: the server receives a commodity comparison request sent by the client side, wherein the commodity comparison request carries the identification information of at least two commodities; the server pulls the attribute information of each commodity in at least two commodities according to the identification information of each commodity in at least two commodities, and calculates a comprehensive score of each commodity in at least two commodities; and the server generates the comparison information of at least two commodities and returns the comparison information back to the client side, wherein the comparison information comprises the attribute information and the comprehensive score of each commodity in at least two commodities. A comparison conclusion of commodities can be visually presented in the comparison information, the ...

CREATION OF OFF-AXIS NULL MAGNETIC FIELD LOCUS FOR IMPROVED UNIFORMITY IN PLASMA DEPOSITION AND ETCHING

Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate. 1. A physical vapor deposition (PVD) apparatus for depositing or etching a layer of material on a substrate , the apparatus comprising:(a) a process chamber configured for formation of charged species;(b) a plurality of substantially coaxial sources of magnetic field configured to produce a null magnetic field locus within a region comprising charged species, wherein said null magnetic field locus is radially offset from a central axis defined by the centers of the substantially coaxial sources; and(c) a substrate support for holding the substrate in position during deposition or etching.224-. (canceled) This application claims the benefit of US Provisional Patent Application 61/259,082 filed Nov. 6, 2009 by Leeser et al., which Provisional Patent Application is incorporated herein by reference in its entirety.Disclosed are methods and associated apparatus for depositing layers of material on a semiconductor substrate using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate.Ionized physical vapor deposition is used in semiconductor processing for deposition of a variety of layers, such as diffusion barrier layers (e.g., diffusion barriers comprising one or more of Ti, Ta, W, and their nitrides) and seed layers of material (e.g., seed layers including copper and its alloys). Deposition is performed on semiconductor substrates (e.g., 200 mm, 300 mm, or 450 mm circular wafers), which typically include a number of layers of materials (e.g., dielectrics and conductors), residing on a semiconductor. In integrated circuit ...

Continuous plasma and rf bias to regulate damage in a substrate processing system

Systems and methods include supplying process gas to a processing chamber including a substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.

PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN

Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds particular use in ionized physical vapor deposition (iPVD) gapfill applications. Plasma flux ion energy and E/D ratio can be controlled by modifying the grounding path (grounding surface's location, shape and/or area). Control of plasma properties in this way can reduce or eliminate reliance on conventional costly and complicated RF systems for plasma control. For a high density plasma source, the ionization fraction and ion energy can be high enough that self-sputtering may occur even without any RF bias. And unlike RF induced sputtering, self-sputtering has narrow ion energy distribution, which provides better process controllability and larger process window for integration. 1. A plasma deposition method , comprising:in a plasma reactor, generating a discharge plasma comprising metal ions, the discharge plasma comprising a grounding path; andcontrolling properties of the plasma by modifying the grounding path of the discharge plasma.2. The method of claim 1 , wherein the modifying of the grounding path comprises switching between float and ground one or more grounding shields in an array of switched grounding shields in the plasma reactor claim 1 , wherein the grounding shields in the array are electrically isolated from each other and vary in surface area and location relative to a substrate support in the plasma reactor claim 1 , and wherein at least one of the switched shields of the array is grounded.3. The method of claim 1 , wherein the modifying of the grounding path comprises varying resistance to ground of a variable grounding shield in conjunction with a grounded shield electrically isolated from the variable grounding shield.4. The method of claim 3 , wherein the grounding of the variable grounding shield is controlled by adjustment of a potentiometer.5. The ...

Methods Of Selective Atomic Layer Deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity. 1. A selective deposition method comprising:providing a substrate with a first surface and a second surface;exposing the substrate to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface; andsequentially exposing the substrate to a metal precursor and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface, the metal precursor comprising a period 3 metal and having a kinetic diameter of greater than or equal to about 22 angstroms.2. The method of claim 1 , wherein the first surface comprises a conductive material and the second surface comprises a dielectric material.3. The method of claim 2 , wherein the blocking compound comprises a blocking molecule with a reactive head group and a carbonaceous tail group claim 2 , the reactive head group selected from the group consisting of (HO)OP— claim 2 , HS— and HSi—.4. The method of claim 1 , wherein the first surface comprises a dielectric material and the second surface comprises a conductive material.5. The method of claim 4 , wherein the blocking compound comprises a blocking molecule with a reactive head group and a carbonaceous tail group claim 4 , the reactive head group is selected from the group ...

METHOD, SERVER, CLIENT TERMINAL, AND ELECTRONIC COMMERCE SYSTEM FOR PRODUCT COMPARISON

A method for product comparison is described, including: receiving a product comparison request sent by a client terminal, the product comparison request carrying identification information of at least two products to be compared; pulling attribute information of each of the at least two products according to the identification information of each of the at least two products; calculating an integrated score of each of the at least two products according to the attribute information of each of the at least two products; and generating comparison information of the at least two products, and returning the comparison information to the client terminal. Further, a server, a client terminal, and an electronic commerce system are also described. A comparison conclusion can be visually presented in comparison information of products, improving the actual effect and usage rate of the product comparison and enhancing the intelligence of the electronic commerce system. 1. A method for product comparison , comprising the steps of:receiving, at a server, a product comparison request sent by a client terminal, the product comparison request carrying identification information of at least two products which are to be compared;pulling, at the server, attribute information of each of the at least two products according to the identification information of each of the at least two products;calculating, at the server, an integrated score of each of the at least two products according to the attribute information of each of the at least two products; andgenerating, at the server, comparison information of the at least two products, and returning the comparison information to the client terminal, the comparison information comprising the attribute information and the integrated score of each of the at least two products.2. The method of claim 1 , wherein the attribute information comprises: price information claim 1 , comment information claim 1 , and product satisfaction information. ...

Methods For Enhancing Selectivity In Sam-Based Selective Deposition

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film. 1. A method of selective deposition comprising:providing a patterned substrate comprising a first metal surface and a second dielectric surface;exposing the patterned substrate to a first SAM molecule to form a first SAM layer on the second surface and first SAM agglomerates on the substrate;exposing the substrate to a plurality of reactants separately to selectively deposit a dielectric layer on the first surface over the second surface;removing the first SAM layer from the second surface;removing the first SAM agglomerates from the substrate;exposing the substrate to a second SAM molecule to form a second SAM layer on the dielectric layer and the second surface and second SAM agglomerates on the substrate; andexposing the substrate to a plurality of reactants separately to selectively deposit a dielectric layer on the first surface over the second surface and the dielectric layer.2. The method of claim 1 , wherein the first SAM agglomerates and the second SAM agglomerates are formed on the first surface and the second surface.3. The method of claim 1 , wherein the first SAM agglomerates and the second SAM agglomerates do overlap the same portions of the substrate.4. The method of claim 1 , wherein the first SAM layer and the second SAM layer contain substantially no voids.5. The method of claim 1 , wherein the first SAM layer is removed by exposing the substrate to an oxidizing plasma.6. The method of claim ...

METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS

Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface. 1. A method of processing a substrate , comprising:providing the substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate;exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten-containinq barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is less than about 225 degrees Celsius; anddepositing a tungsten fill layer over the tungsten-containinq barrier layer to fill the feature to the first surface.2. The method of claim 1 , wherein the feature has an aspect ratio of depth to width of greater than about 5:1.3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.4. The method of claim 3 , wherein the hydrogen-containing gas is Hor NH.5. The method of claim 1 , wherein the first gas further comprises a carrier gas.6. The method of claim 5 , wherein the carrier gas is argon claim 5 , helium claim 5 , or nitrogen.7. The method of claim 6 , wherein a flow rate of the carrier gas is about ...

Methods and apparatus for high reflectivity aluminum layers

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

METHODS OF FORMING VOID AND SEAM FREE METAL FEATURES

Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures. 1. A method of depositing a film , comprising:depositing a tungsten bulk fill material into a plurality of openings on a substrate by exposing the substrate to a first tungsten-containing precursor gas and a first reducing agent at or below a first processing pressure, the substrate comprising a first material layer having the plurality of openings formed therein and a tungsten nucleation layer formed on the first material layer and conformally lining the plurality of openings; and 'the second processing pressure is at least three times greater than the first processing pressure.', 'depositing a first tungsten overburden layer over the tungsten bulk fill material comprising exposing the substrate to a second tungsten-containing precursor gas and a second reducing agent at a second processing pressure, wherein'}2. The method of claim 1 , further comprising exposing the tungsten nucleation layer to a radical species of a treatment gas to selectively inhibit deposition of the tungsten bulk fill material on a field surface of the tungsten nucleation layer relative to deposition of ...

Method, server, client terminal, and electronic commerce system for product comparison

A method for product comparison is described, including: receiving a product comparison request sent by a client terminal, the product comparison request carrying identification information of at least two products to be compared; pulling attribute information of each of the at least two products according to the identification information of each of the at least two products; calculating an integrated score of each of the at least two products according to the attribute information of each of the at least two products; and generating comparison information of the at least two products, and returning the comparison information to the client terminal. Further, a server, a client terminal, and an electronic commerce system are also described. A comparison conclusion can be visually presented in comparison information of products, improving the actual effect and usage rate of the product comparison and enhancing the intelligence of the electronic commerce system.

Methods of selective atomic layer deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Selective deposition defects removal by chemical etch

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

Metal cap for contact resistance reduction

A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

Methods and apparatus for producing semiconductor liners

Methods and apparatus for producing a diffusion barrier layer. The semiconductor liner is formed by depositing a liner material on a substrate and thermally treating the liner material with a rapid thermal process (RTP) to form the semiconductor liner without an air break between deposition and thermal treatment. A material layer is then deposited on the diffusion barrier layer. The liner material may be deposited using an atomic layer deposition (ALD) based process. The RTP process operates at a temperature of approximately 600 degrees Celsius to approximately 1100 degrees Celsius.

Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill

A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Methods of selective atomic layer deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Selective metal removal with flowable polymer

Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Wafer treatment for achieving defect-free self-assembled monolayers

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Metal cap for contact resistance reduction

A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

Field suppressed metal gapfill

Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill.

Methods of selective atomic layer deposition

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

LOW THICKNESS DEPENDENT WORK-FUNCTION nMOS INTEGRATION FOR METAL GATE

Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Continuous plasma and rf bias to regulate damage in a substrate processing system

Systems and methods include supplying process gas to a processing chamber including a substrate. Plasma is created in the processing chamber. After performing a first substrate processing step, the plasma is maintained in the processing chamber and at least one operating parameter is adjusted. The operating parameters may include RF bias to a pedestal, a plasma voltage bias, a gas admixture, a gas flow, a gas pressure, an etch to deposition (E/D) ratio and/or combinations thereof. One or more additional substrate processing steps are performed without an interruption in the plasma between the first substrate processing step and the one or more additional substrate processing steps.

Methods for Forming Low Resistivity Contacts

Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Ruthenium reflow for via fill

A method for forming conductive structures for a semiconductor device includes depositing a reflow material in features, e.g. vias, formed in a dielectric layer. A high melting point material is deposited in the feature and is reflowed and annealed in an ambient comprising one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals at a temperature greater than 300 C to fill the feature with a reflow material.

Selective metal removal with flowable polymer

Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Field suppressed metal gapfill

Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill. The disclosed methods

Methods and apparatus for high reflectivity aluminum layers

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Gradient oxidation and etch for pvd metal as bottom liner in bottom up gap fill

A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Metal cap for contact resistance reduction

A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

Methods for forming low resistivity contacts

Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Methods for selective deposition using self-assembled monolayers

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Selective aluminum oxide film deposition

Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

Dual silicide process using ruthenium silicide

Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

Methods of growing metal-containing films

Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl 4 ), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH 3 ), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

Low-energy underlayer for room temperature physical vapor deposition of electrically conductive features

Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.

Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration

A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoFe) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration

A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Methods for selective deposition using self-assembled monolayers

Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Low-energy underlayer for room temperature physical vapor deposition of electrically conductive features

Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50°C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.