СИСТЕМА И СПОСОБ ТЕПЛОИЗЛУЧЕНИЯ ДЛЯ МОБИЛЬНОГО ТЕРМИНАЛА СВЯЗИ

Изобретение относится к системе и способу для отвода тепла от терминала мобильной системы связи. Система содержит монтажную плату, установленную в корпусе терминала, на которой смонтирован тепловыделяющий компонент, и экранирующий корпус для экранирования электромагнитных волн, излучаемых монтажной платой, и крепления монтажной платы. Теплоизлучающее устройство установлено между тепловыделяющим компонентом и экранирующим корпусом. Причем теплоизлучающее устройство передает тепло, выделяемое тепловыделяющим компонентом, с монтажной платы непосредственно экранирующему корпусу. Техническим результатом является предотвращение эффекта передачи выделяемого тепла монтажной плате от экранирующего корпуса. 2 н. и 23 з.п. ф-лы, 7 ил.

УСТРОЙСТВО, СОСТОЯЩЕЕ ИЗ ПОДЛОЖКИ ДЛЯ МОЩНЫХ КОМПОНЕНТОВ ЭЛЕКТРИЧЕСКОЙ СХЕМЫ И ТЕПЛООТВОДА, А ТАКЖЕ СПОСОБ ИЗГОТОВЛЕНИЯ ТАКОГО УСТРОЙСТВА

В изобретении описано устройство, состоящее из подложки и теплоотвода, причем подложка имеет на первой стороне по меньшей мере один мощный схемный компонент, смонтированный на первом печатном проводнике большой площади, а на второй стороне, противоположной стороне размещения мощного схемного компонента, имеет второй печатный проводник большой площади, который теплопроводящими межслойными соединениями соединен с первым печатным проводником, при этом подложка второй стороной установлена на теплоотводе с обеспечением теплопроводного контакта между ними. С целью обеспечить в таком устройстве эффективную теплопередачу от подложки к теплоотводу и одновременно предотвратить нежелательный электрический контакт между находящимися под напряжением печатными проводниками в изобретении предлагается устанавливать подложку на теплоотвод с расположенными на ее второй стороне распорками, которые удерживают эту подложку на заданном расстоянии от теплоотвода, при этом зазор между подложкой и теплоотводом, ...

ФРАКТАЛЬНЫЙ РАДИАТОР ДЛЯ ОХЛАЖДЕНИЯ ПОЛУПРОВОДНИКОВЫХ И МИКРОЭЛЕКТРОННЫХ КОМПОНЕНТ

Полезная модель относится к системам охлаждения полупроводниковых и микроэлектронных компонент, а именно к радиаторам, осуществляющим теплообмен между корпусом миниатюрных электронных приборов и охлаждающей средой. Задачей предлагаемой полезной модели является повышение эффективности охлаждения миниатюрных полупроводниковых или микроэлектронных электровакуумных компонент за счет повышения интенсивности их теплообмена с окружающей средой путем увеличения площади охлаждаемых поверхностей радиатора без увеличения его внешних габаритных размеров. Поставленная задача достигается тем, что предложен фрактальный радиатор для охлаждения полупроводниковых или микроэлектронных компонент, содержащий основание, штыри и теплопроводную полку для размещения электронного прибора, причем на штырях установлены тепловыделяющие пластины, имеющие отверстия в форме фрактальной структуры ковра Серпинского. Штыри радиатора повторяют форму отверстий ковра Серпинского второго ранга, выполненных в тепловыделяющих ...

КЕРАМИЧЕСКАЯ ПЕЧАТНАЯ ПЛАТА С АЛЮМИНИЕВЫМ РАДИАТОРОМ

... 1. Печатная плата (2) из керамики с верхней стороной (2а) и нижней стороной (2b), причем на верхней стороне (2а) размещены спеченные участки металлизации, а нижняя сторона выполнена в виде радиатора (3), отличающаяся тем, что на нижней стороне (2b) также расположены спеченные участки металлизации, к которым припаян металлический радиатор.2. Печатная плата по п.1, отличающаяся тем, что печатная плата (2) состоит из оксида алюминия или нитрида алюминия.3. Печатная плата по п.1, отличающаяся тем, что металлический радиатор (3) состоит из алюминия.4. Печатная плата по п.1, отличающаяся тем, что металлический радиатор (3) состоит из несущей пластины (4) с соединительной стороной и рабочей стороной, и радиатор (3) припаян соединительной стороной к участкам металлизации нижней стороны (2b) печатной платы (2), а на рабочей стороне у него имеются выступающие охлаждающие элементы (3).5. Печатная плата по п.4, отличающаяся тем, что выступающие охлаждающие элементы (3) представляют собой множество ...

ТИРИСТОРНЫЙ РАДИАТОР В СБОРЕ ДЛЯ ПРЕДОХРАНИТЕЛЬНОГО КЛАПАНА ПОСТОЯННОГО ТОКА

Изобретение используется при эксплуатации передающих предохранительных клапанов постоянного тока и, в частности, представляет собой тиристорный радиатор в сборе для предохранительного клапана постоянного тока. Отверстие для слива воды из радиатора N сообщается с отверстием для слива воды из радиатора (N-2). Отверстие для впуска воды в радиатор N сообщается с отверстием для впуска воды в радиатор (N+2). Либо отверстие для впуска воды в радиатор N сообщается с отверстием для впуска воды в радиатор (N-2), а отверстие для слива воды из радиатора N сообщается с отверстием для слива воды из радиатора (N+2). Отверстие для слива воды из радиатора M сообщается с отверстием для слива воды из радиатора (M-2), а отверстие для впуска воды в радиатор M сообщается с отверстием для впуска воды в радиатор (M+2). Либо отверстие для впуска воды в радиатор M сообщается с отверстием для впуска воды в радиатор (M-2), а отверстие для слива воды из радиатора M сообщается с отверстием для слива воды из радиатора ...

СБОРНЫЙ КОРПУС МИКРОСХЕМЫ И СПОСОБ ЕГО ИСПОЛЬЗОВАНИЯ

Радиатор с выступами на теплообменной поверхности

... 1. Радиатор с большим количеством выступов, выполненных на его теплообменной поверхности, которая с возможностью теплообмена соединена с выделяющим тепло компонентом через теплопроводную резину и отбирает от него тепло, которое затем рассеивается радиатором. 2. Радиатор по п.1, в котором выступы образованы большим количеством канавок, выполненных на его теплообменной поверхности. 3. Радиатор по п.2, в котором канавки состоят из канавок, проходящих в по крайней мере двух направлениях, пересекающих друг друга. 4. Радиатор по п.2 или 3, в котором каждая из канавок в поперечном сечении имеет нижнюю поверхность и боковые поверхности, по крайней мере одна из которых выполнена скругленной. 5. Радиатор по п.1, в котором выступы расположены над его теплообменной поверхностью и отделены друг от друга. 6. Радиатор по п.1, в котором выделяющий тепло компонент расположен на печатной плате. 7. Радиатор по любому из пп.1-6, в котором усилие, нагружаемое для соединения выделяющего тепло компонента с теплообменной ...

РАДИАТОР ДЛЯ ОХЛАЖДЕНИЯ СИЛОВОГО ПОЛУПРОВОДНИКОВОГО ПРИБОРА

Радиатор для охлаждения силового полупроводникового прибора, содержащий основание в виде соединенных между собой пластин, опорную площадку для полупроводникового прибора, образованную торцевыми поверхностями соединенных между собой пластин основания, ребра в виде отогнутых свободных концов пластин основания, расположенных на одинаковом расстоянии друг от друга, отличающийся тем, что основание выполнено из двух видов чередующихся пластин, причем пластины, выступающие за пределы основания и образующие ребра, расположены параллельно друг другу.

МНОГОФУНКЦИОНАЛЬНЫЙ МИКРОЭЛЕКТРОННЫЙ ЭЛЕМЕНТ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Способ изготовления многофункционального микроэлектронного элемента (1), имеющий следующие шаги:- обеспечение подложки (3) с передней стороной (5) и обратной стороной (7),- выполнение нескольких компонентов (9) микроэлектронного элемента (11) на передней стороне (5) подложки (3), и- выполнение одного или нескольких компонентов (21-33) элемента (35) Пельтье на обратной стороне (7) подложки (3), и- выполнение одного или нескольких термоэлементов и цепи регулирования температуры,отличающийся тем, что- по меньшей мере один из компонентов (9) микроэлектронного элемента (11) и по меньшей мере один из компонентов (21-27) элемента (35) Пельтье выполняют в подложке (3),- из пленкообразной заготовки (15) высекают участок (17, 19), и высеченный участок (17, 19) с образованием по меньшей мере одного из компонентов (21, 23) микроэлектронного элемента (11) и/или по меньшей мере одного из компонентов (21-27) элемента (35) Пельтье вдавливают в подложку (3).2. Способ по п. 1, отличающийся тем, что подложка ...

Корпус силового полупроводникового прибора

Устройство для охлаждения

Semiconductor device production process for producing a laser cut device with a rear plated heat sink

A semiconductor device production process comprises forming metal-covered front and back face separation trenches, the back face trench being formed by etching using a plated heat sink as mask. A semiconductor device production process comprises: (1) applying a first metal layer to cover the surface of a first separation trench in a semiconductor substrate surface; (2) thinning the substrate from its back face; (3) forming a second separation trench at the back face of the first trench to expose the first metal layer and covering the second trench surface with a second metal layer; and (4) laser cutting the first and second metal layers from the first metal layer side. The novelty is that the second trench is formed by etching using a plated heat sink formed in a back face region beyond the back face surface of the first trench, the two metal layers having a reflection capacity of <= 80% with respect to laser light. An Independent claim is also included for a device produced by the above ...

Heat sink device for electrical component, has one-piece heat sink body with Cu contact element and metal cooling element

The heat sink device has a one-piece heat sink body (10) provided with a Cu contact element (16), for attaching to the electrical component and a cooling element (14), for dissipation of the waste heat generated by the electrical component, which is made of a different metal. An interlocking joint structure can be provided between the Cu contact element and the metal cooling element.

Kühlkörper für elektrische und/oder elektronische Bauteile

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Anordnung fuer als Waermequelle wirkendes elektrisches Bauelement zur Kuehlung

BRÜCKE FÜR RADIOFREQUENZ- (RF) MULTI-CHIP-MODULE

Ausführungsbeispiele können sich auf ein Radiofrequenz- (RF) Multi-Chip-Modul beziehen, das einen ersten RF-Die und einen zweiten RF-Die umfasst. Der erste und zweite RF-Die können mit einem Package-Substrat an einer inaktiven Seite des jeweiligen Dies gekoppelt sein. Eine Brücke kann mit einer aktiven Seite des ersten und zweiten RF-Dies gekoppelt sein, sodass der erste und zweite RF-Die kommunikativ durch die Brücke gekoppelt sind und sodass sich der erste und zweite RF-Die zumindest teilweise zwischen dem Package-Substrat und der Brücke befinden. Andere Ausführungsbeispiele können beschrieben oder beansprucht sein.

Verfahren zur Verbindung von Keramik mit Kupfer, ohne dabei eine Wölbung im Kupfer zu erzeugen

Elektronischer Baustein, der nachfolgendes umfasst: - eine Grundplatte, die ein Paar von sich erstreckenden Flanschen und einen dazwischen liegenden Führungsteil umfasst und der Führungsteil eine im Wesentlichen planare erste Oberfläche aufweist, wobei das Paar von Flanschen sich im Wesentlichen senkrecht von der ersten Oberfläche erstreckt und wobei das Paar von Flanschen durch eine vorgegebene Breite der Führung getrennt ist; - eine keramische Leiterplatte, die eine im Wesentlichen planare zweite Oberfläche umfasst, wobei die zweite Oberfläche im Wesentlichen parallel ist zur ersten Oberfläche und ausgeführt ist, um zu der ersten Oberfläche innerhalb der Breite der Führung zu passen; und - eine haftende Schicht, die sich im Allgemeinen zwischen der ersten Oberfläche und der zweiten Oberfläche befindet, wobei die haftende Schicht die erste Oberfläche der Grundplatte fest mit der zweiten Oberfläche der Leiterplatte verbindet, wobei des Paar von Flanschen die Funktion aufweist, die Ebenheit ...

Mehrphasige rotierende elektrische Wechselstrommaschine

ALUMINIUMOXID FÜR THERMISCHES MANAGEMENT ODER ADHÄSION

Ausführungsbeispiele hierin beziehen sich auf ein Gehäuse, das Aluminiumoxid als Adhäsionsschicht und Schicht mit hoher thermischer Leitfähigkeit verwendet, mit einer Aufbauschicht, die eine erste Seite und eine zweite Seite gegenüberliegend zu der ersten Seite, eine erste Leiterbahn, die an die erste Seite der Aufbauschicht angebracht ist, eine Aluminiumoxidschicht, die mit der ersten Leiterbahn und einem freiliegenden Bereich der ersten Seite der Aufbauschicht gekoppelt ist, eine Laminier-Aufbauschicht, die mit der Aluminiumoxidschicht auf einer Seite der Aluminiumoxidschicht gegenüberliegend zu der Aufbauschicht gekoppelt ist, wobei die Laminier-Aufbauschicht ein oder mehrere Vias zu der Leiterbahn aufweist, und einer Keimschicht, die mit der Laminier-Aufbauschicht gekoppelt ist. Andere Ausführungsbeispiele können beschrieben und/oder beansprucht sein.

Heat-sink arrangement for electronic component esp. high-power microprocessor, has thermal tube joined via evaporation zone in cooling-medium tight fashion to contact

A cooling device for electronic components has a contact (110) with a contact surface (112) for take-up of heat and which is located in heat-conducting contact with one surface of the electronic component being cooled; a mainly straight heat tube (120) hermetically sealed externally and filled with a cooling medium (140) and having an evaporation zone (122) and a condensation zone. The heat tube (120) is joined by its evaporation zone (122) in a cooling-medium tight, preferably tightly-fit with the contact (110) and the longitudinal axis forms an acute angle with the contact surface (112). An independent claim is included for an electronic component with a cooling device.

Wärmeableiter

Ein Wärmeableiter weist ein Säulenelement, an dem eine Vorrichtung, die Wärme erzeugt, montiert werden soll, und eine Vielzahl an Wärme ableitenden Rippen auf, die an einer Seitenfläche des Säulenelementes angeordnet sind, um die durch die Vorrichtung erzeugte Wärme abzuleiten. Der Wärmeableiter weist ferner ein ringförmiges Haltelement auf, in dem eine Vielzahl an Nuten ausgebildet ist. Das Haltelement ist an einem Längsende des Säulenelementes montiert und bei diesem ist jeder der Wärme ableitenden Rippen in eine entsprechende der Nuten des Haltelementes eingeführt, wodurch die Wärme ableitenden Rippen am Säulenelement gehalten werden. Jede der Wärme ableitenden Rippen hat einen Abtrennverhinderungsabschnitt, der verhindert, dass die Wärme ableitenden Rippe von dem Säulenelement in eine Richtung senkrecht zur Längsrichtung des Säulenelementes abgetrennt wird.

Heat-sink element for IC module

The heat sink element (1) has a rectangular flat plate with a cross-sectional area perpendicular to its thickness which is greater than that of the IC module (10) and provided with integral fixing elements (2) for holding it in thermal contact with the IC module. The fixing elements are positioned around the outside of the contact surface between the heat sink element and the IC module and secured to the printed circuit board (8) in which the IC module is mounted.

Heat sink for HF transistors etc. - is in form of HF delay line with transistor at line end

The heat sink (1) is in the form of a high frequency delay line, on whose one end (3) the high frequency transistor (2) is mounted. The other end of the delay line serves for tapping or supply, of the high frequency. Preferably the heat sink has two branches extending from the transistor in two directions. At least one end of the brances can not be used for tapping, or supply, of the high frequency. This branch may be so long that its impedance near the transistor is much higher than its wave resistance. The latter may be increased by foiling, or by slits orthogonal to the current flow or by meandering structures, or by ferromagnetic material inside or round the heat sink.

Kühlkörper für Halbleiterbauelemente o.dgl. Geräte

Packung mit aufgerauter verkapselter Oberfläche zur Förderung einer Haftung

Eine Packung (100), die mindestens einen elektronischen Chip (102), einen ersten wärmeabführenden Körper (104), der thermisch mit einer Hauptoberfläche des mindestens einen elektronischen Chips (102) gekoppelt ist und dafür ausgelegt ist, Wärmeenergie von dem mindestens einen elektronischen Chip (102) abzuführen, ein Kapselungsmittel (108), das mindestens einen Teil des mindestens einen elektronischen Chips (102) und einen Teil des ersten wärmeabführenden Körpers (104) verkapselt, wobei mindestens ein Teil einer Oberfläche des ersten wärmeabführenden Körpers (104) aufgeraut ist.

Electronic component heat extracting apparatus for e.g. electronics of motor vehicle

The apparatus includes openings (8) in a circuit board (1), and its attached insulating layer (4), in the vicinity of at least one component (3). A metal plate (5) attached to the circuit board via an insulating layer has protrusions (9) whose height correspond to the thicknesses of the circuit board and insulating layer or slightly exceeds these thicknesses. The protrusions protrude through the openings in the circuit board and insulating layer. The insulating layer acts as an adhesive layer and a distance layer. The protrusions are pressed into the metal plate.

Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung

Die Erfindung betrifft eine Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul und einem Kühlkörper, wobei der Kühlkörper ein erstes Kühlgehäusebauteil, das eine durch das erste Kühlgehäusebauteil hindurchgehende Ausnehmung aufweist und ein zweites Kühlgehäusebauteil aufweist, wobei die Kühlplatte in der Ausnehmung angeordnet ist, wobei das erste und das zweite Kühlgehäusebauteil eine derartige Form aufweisen und derartig zueinander angeordnet sind, dass sich ein Hohlraum an der den Leistungshalbleiterbauelementen abgewandten Seite der Kühlplatte ausbildet, wobei die Kühlplatte mittels einer um die Kühlplatte umlaufenden ersten Schweißnaht mit dem ersten Kühlgehäusebauteil verbunden ist, wobei die erste Schweißnaht die Kühlplatte gegen das erste Kühlgehäusebauteil abdichtet, wobei das zweite Kühlgehäusebauteil mit dem ersten Kühlgehäusebauteil verbunden ist, wobei die erste Schweißnaht ausschließlich hohlraumseitig angeordnet ist und solchermaßen nicht vollständig von einer ...

SEMICONDUCTOR DEVICE HAVING RADIATOR

Halbleitermodul, Fahrzeug und Fertigungsverfahren

... [Problem] Der Wirkungsgrad der Übertragung der von mehreren Halbleitervorrichtungen eines Halbleitermoduls erzeugten Wärme auf ein Kühlmittel, das sich in der Nähe der Kühlstiftrippen vorbeibewegt, ist gering.[Mittel zur Lösung des Problems] Ein Halbleitermodul umfasst eine Halbleitervorrichtung und eine Kühlvorrichtung. Die Halbleitervorrichtung enthält einen Halbleiter-Chip und eine Leiterplatte, auf der der Halbleiter-Chip angebracht ist. Die Kühlvorrichtung enthält: eine Kopfplatte, an der die Halbleitervorrichtung angebracht ist; eine Seitenwand, die mit der Kopfplatte verbunden ist; eine Bodenplatte, die mit der Seitenwand verbunden ist und der Kopfplatte zugewandt ist; einen Kühlmittelströmungsabschnitt, um zu verursachen, dass ein Kühlmittel strömt, der durch die Kopfplatte, die Seitenwand und die Bodenplatte definiert ist, wobei ein Querschnitt des Kühlmittelströmungsabschnitts parallel zu einer Hauptfläche der Kopfplatte eine im Wesentlichen rechteckige Form mit längeren Seiten ...

Wärme abstrahlendes Bauelement und elektrischer Verteilerkasten

Es werden ein Wärme abstrahlendes Bauelement und ein elektrischer Verteilerkasten bereitgestellt, die eine einfache Ausbildung haben und fähig sind, durch eine Halbleitervorrichtung erzeugte Wärme rasch abzustrahlen. Ein Stützbauelement 20, das Wärme aus einem Substratabschnitt 31 mit einer Montagefläche, auf die eine Halbleitervorrichtung 13 montiert ist, über einen gegenüberliegenden Plattenabschnitt 223 aufnimmt, der der Montagefläche gegenüberliegt, und die aufgenommene Wärme abstrahlt, weist einen in dem gegenüberliegenden Plattenabschnitt 223 gebildeten ausgesparten Abschnitt 24 an einer Position auf, die der Halbleitervorrichtung 13 entspricht. Der ausgesparte Abschnitt 24 hat eine Wanddicke, die größer als diejenige eines anderen Abschnitts des gegenüberliegenden Plattenabschnitts 223 ist.

Cooler for power semiconductor components and modules with individual cooling elements in two-dimensional matrix

The individual cooling elements (3) with structured surface are arranged in lines and columns, with each individual cooling element thermally coupled to the semiconductor module (1). The individual cooling element consists of two parts, a base body (31) facing the semiconductor module, and a finger- or plate-shaped ridge (32) on the base body.

Halbleiterbauelement

Elektrische Bauelementeanordnung mit mehreren in einem Gehäuse angeordneten elektrischen Bauelementen

Production of a heat deviating surface of a component used in the production of a semiconductor element comprises inserting trenches into the component using an etching process

Production of a heat deviating surface of a component (1) comprises inserting trenches (3) into the component using an etching process. Preferred Features: The surface of the component is covered with a masking layer (2) in prescribed regions and during etching trenches are etched into the non-covered regions of the surface of the component. An etching solution comprising a 25 vol.% tetramethylammonium hydroxide solution or ethylene diamine or hydrazine is used at 70 deg C. The masking layer is applied to regions of the surface of the component in which the component is divided during the subsequent process steps.

Leistungsmodul

The invention relates to a power module having a simple and cost-effective arrangement and ensuring reliable operation. To this end, a circuit comprising at least one electronic component is arranged on a carrier body. A conductor pattern is embodied on the upper side of said carrier body, and a structured cooler element consisting of the material of the carrier body is provided on the lower side of the same. The invention also relates to the use of the power module as a power converter for electric motors.

A solid state memory unit cooling apparatus and solid state storage device

Heat radiation system for electric circuitry

A heatsink and a method and an assembly for forming the same

Heat sink apparatus for semiconductor devices

A unitary heat sink apparatus comprises a body of heat conductive material formed with parallel grooves (18) which define fins (14) the ratio of the height P of which to the width f of the grooves is at least 6 to 1. In one embodiment the body is formed with another series of grooves intersecting the grooves (18) and dividing the fins into a plurality of pins. A method of forming such a heat sink apparatus is also described in which the grooves are sawn into the body. In one embodiment the body is extruded with the grooves partially formed by the extrusion, whereafter their depth is increased by sawing. ...

Heat dissipating device

A heat dissipating device 20 includes a plurality of heat dissipating plates 21 which are disposed side by side. Each of the heat dissipating plates 21 has a stack plate portion 211 and a fin plate portion 212 that extends integrally from the stack plate portion and that has a thickness smaller than that of the stack plate portion. The stack plate portions 211 of the heat dissipating plates 21 are in close contact with one another, and cooperatively form a stack part 22 with a flat contact face 221 adapted to be placed in contact with a heat generating article.

Heat sinks for electrical or other apparatus

INTEGRAL PROTECTIVE ENCLOSURE FOR AN ASSEMBLY MOUNTED ON A FLEXIBLE PRINTED CIRCUIT BOARD

Described is a flexible electrical assembly comprising a TAB device mounted on one surface of a flexible printed circuit board, a heat sink with a set of crimping members thereon mounted on an opposite surface of the printed circuit board and a protective cover with attachment holes therein positioned above the TAB device. The protective cover is mounted so that the holes are aligned with similar ones in the printed circuit board. The crimping members are inserted through the holes and are folded onto the protective cover to form a unified structure.

Semiconductor device and production method

Semiconductor element cooling apparatus

Surface complemental heat dissipation device

Stacked wafer or die packaging with enhanced thermal and device performance

Heat dissipating device

A heat dissipating device (A) includes a stack portion and a fin portion. The stack portion includes a plurality of alternately disposed first and second stack plates (32, 42) which are mounted to one another. The first and second stack plates are disposed side by side and are in close contact with one another. The fin portion includes a plurality fin plates (31) that extend integrally and respectively from the second stack plates (42) such that a space is formed between two adjacent ones of the fin plates.

Heat dissipating device with fins inclinedly connected to base

Cooling apparatus

Ceramic module for power semiconductor integrated packaging and preparation method thereof

MOUNTING SILICON CHIPS

ENVELOPED ARRANGEMENT OF ELECTRIC CIRCUIT ELEMENTS

... 1323643 Component assemblies INTERNATIONAL STANDARD ELECTRIC CORP 28 May 1971 [1 June 1970] 17852/71 Heading H1R [Also in Division H2] A sealed assembly of circuit elements, such as a voltage multiplier embedded in a plastics material, has different portions of the envelope differently configured such that heat dissipation is facilitated for portions where heat generation is high. In the voltage multiplier shown, having rectifier stacks 1 and capacitors 2, the cooling slots 4 are larger at the high voltage end where heat generation is greatest. In addition to or alternative to the slots 4, cooling fins 8 of differing dimensions may be used. The end remote from the mounting base may be increased in surface area so that the assembly operates at a uniform temperature. The envelope 3 may consist completely of casting resin or may be a shell of insulating material in which the elements are sealed in resin.

COOLING ELECTRICAL APPARATUS

ELECTRICAL COMPONENTS

Improvements in or relating to high power semiconductor rectifiers

... 876,133. Semi-conductor rectifiers; couplings. STANDARD TELEPHONES & CABLES Ltd. Jan. 24, 1958 [Jan. 28, 1957], No. 2458/58. Classes 37 and 38 (1). [Also in Group XXII] In a rectifier in which a semi-conductor rectifier element 21, Fig. 9, is mounted within a gas-tight housing 9, connection between the element 21 and an external terminal 18 is made by means of a hollow sheet metal connection 23, e.g. of silver or copper, having an intermediate portion divided into outwardly bulging flexible strips 2, Fig. 4, by one or more rows of parallel slits. The slits may be inclined, Fig. 6, or in two rows, Fig. 8. The terminal 18 and connector 23 are connected by a copper rod 11 sealed in a ceramic collar 13 sealed in the housing 9 which is provided with a terminal or mounting stud 8.

Thermal interface material structures for directing heat in a three-dimensional space

A thermal interface material (TIM) structure for directing heat in a three-dimensional space including a TIM sheet (100). The TIM sheet (100) includes a lower portion (102) along a lower plane;a first side portion along a first side plane;a first upper portion along an upper plane;a first fold between the lower portion (102) and the first side portion positioning the first side portion substantially perpendicular to the lower portion (102); and a second fold between the first side portion and the first upper portion positioning the first upper portion on substantially perpendicular to the first side portion and substantially parallel to the lower portion (102).

High power device fault localization via die surface contouring

KUEHLELEMENT WITH FORCED CIRCULATION COOLING FOR SEMICONDUCTOR COMPONENTS OF THE POWER ELECTRONICS

RADIATOR BOX

ANORDNUNG ZUR KÜHLUNG VON SMD-LEISTUNGSBAUELEMENTEN AUF EINER LEITERPLATTE

Verfahren zur Herstellung eines Kühlkörpers und Kühlkörper für elektrische Bauteile

The invention relates to a method for producing a heat sink (1) from aluminium for cooling and fixing electronic and/or electrical components, comprising substantially a base plate (2) with projecting cooling parts (23) and, opposite the latter, at least one contact area (25) for thermally coupling parts to be cooled, and relates to said heat sink. In order to meet the technical requirement for heat sinks (1) with large contact areas (25) and with a high uniform cooling effect thereof, the invention provides for individual segment plates (21) of a base plate (1) to be produced from a starting material in a first step by means of pressure forming according to DIN 8583 while the cooling parts (23, 24) which project therefrom are being formed, whereupon at least two base plate individual segments (21) are clamped with the side surfaces (22) resting against one another and are metallically connected in a melt-free manner in a second step, whereupon the large-area heat sink (1) is finished in ...

BALL MATRIX HOUSING WITH HEAT DISTRIBUTOR AND ITS PRODUCTION

KUEHLELEMENT WITH FORCED CIRCULATION COOLING FOR SEMICONDUCTOR COMPONENTS OF THE POWER ELECTRONICS

RADIATOR BOX FOR ELECTRICAL AND ELECTRONIC ELEMENTS

AIR-COOLED BUILDING GROUP FOR A LSI (LARGE SCALE INTEGRATION) - PANEL AND PROCEDURE FOR THE PRODUCTION THE SAME

Kühlvorrichtung für eine LED

Die Erfindung betrifft eine Kühlvorrichtung für eine auf einer Leiterplatte (2) montierten LED (1). Zur Verbesserung der Kühlung ist vorgesehen, dass die Leiterplatte (2) im Bereich der LED (1) an ihrer Rückseite verdünnt ausgebildet ist, und dass mittels eines wärmeleitenden Materials (3) Kontakt zu einem auf der Rückseite der Leiterplatte (2) angeordneten Kühlkörper ( 4) besteht. Die Verdünnung kann beispielsweise durch mechanisches oder chemisches Abtragen, oder durch sukzessives Aufbringen von Prepregs unterschiedlicher Dicke und unterschiedlicher Geometrie entstehen. Das Wärme leitende Material kann beispielsweise eine Wärmeleitpaste oder ein weiches, plastisch verformbares Material, ein s.g. Gap-Filler, sein.

COOLING DEVICE FOR AN ELECTRICAL BUILDING GROUP

RADIATOR BOX FOR SEMICONDUCTOR COMPONENTS.

RADIATOR BOX ARRANGEMENT AND ITS MANUFACTURING METHOD

RADIATOR BOX FOR SEMICONDUCTOR COMPONENTS OD. SUCH.

FLEXIBLE THERMAL LINKS AND BUILDING GROUPS

RADIATOR BOX FOR SEMICONDUCTOR COMPONENTS OD. SUCH MECHANISMS

RADIATOR BOX FOR AN ELECTRONIC ELEMENT, DEVICE AND A PROCEDURE FOR ITS PRODUCTION

PROCEDURE FOR THE PRODUCTION OF RADIATOR BOX

Power semiconductor element

Power transistor package with integrated flange for surface mount heat removal

HEAT SINK MADE FROM LONGER AND SHORTER GRAPHITE SHEETS

SEMI-CONDUCTOR DEVICE

Assembly consisting of a substrate for power components and a cooling element and method for the production thereof

HEAT SINK

A heat sink is described for extracting heat from at least one electronic device, such as a microprocessor, either directly or indirectly (i.e. via liquid coolant). The heat sink includes a first thermal plate, a second thermal plate and a plurality of fins integral with and extending between both the first thermal plate and the second thermal plate.

GAS HEAT EXCHANGER AND METHOD OF MAKING

GAS HEAT EXCHANGER AND METHOD OF MAKING A plurality of thin flat parallel positioned thermal conductive fins adapted to be connected to an object and a gas passageway passing between adjacent fins and extending between the top of the fins and opposite sides. Gas guides are positioned between adjacent fins at the center of the plurality of fins and redirect the outlet end of the passageways normal to the inlet ends of the passageways. Aternately positioned fins face in opposing directions. The fins may be integrally formed or individually formed. A thermal conductive base may be provided at the bottom of the plurality of fins for connection to an electronic package.

HEAT TRANSFER MECHANISM FOR INTEGRATED CIRCUIT PACKAGE

HEAT TRANSFER MECHANISM FOR INTEGRATED CIRCUIT PACKAGE Heat is removed from silicon devices in an integrated circuit package by means of a thermal liquid material contained in a film mounted on the underside of a cover enclosing the integrated circuit device. The film is electrically non-conductive and the film with the enclosed thermal liquid material form a formable pillow such that after the chip/substrate are assembled, the cover with the film containing the thermal liquid material is placed over the substrate and sealed thereto in a manner such that the film comes into direct contact with the top of the chips mounted on the substrate. This provides a direct heat transfer from the chip through the film to the thermal liquid material out to the cover, which may be formed as a heat radiator.

COOLING APPARATUS FOR SEMICONDUCTOR ELEMENTS

... 6414 INVENTORS: PETER KNAPP and XAVER VOGEL CAN INVENTION: COOLING APPARATUS FOR SEMICONDUCTOR ELEMENTS A cooling apparatus for high-power semiconductors with fluid cooling, especially for track-bound vehicles or railroads and for generator excitation. The disk-shaped semiconductor elements to be cooled are in pressure contact with metallic cooling elements and are arranged, in conjunction therewith, in flow channels. The flow of the cooling agent predominantly is conducted through such cooling elements. Within the cooling elements there are arranged, perpendicular to their contact surface with the semiconductor elements, heat conducting elements in a plug or plate configuration. These heat conducting or dissipation elements produce a turbulent fluid flow. The cooling element base or floor can have a nonuniform or irregular wall thickness. Two substantially identical cooling elements can be in heat conducting contact with one another by means of their heat conducting elements, and a flow ...

THERMAL CONDUCTION ELEMENT FOR SEMICONDUCTOR DEVICES

Thermal Conduction Element For Semiconductor Devices A disk shaped thermal bridge element for use in a semiconductor package to conduct heat from a device to a cold plate, which disk element has a bulged shape with a first set of inwardly extending slots and a second set of outwardly extending slots emanating from the center of the disk.

FLAT ELECTRONIC PACKAGE ASSEMBLY

LSI CHIP PACKAGE AND METHOD

HEAT EXCHANGER

A heat exchanger which may be used either as a heat sink to remove heat from an article or to heat a fluid, comprising a base (12, 12A; 31; 41; 81) to which an article to be cooled can be attached and a plurality of fins (13, 32, 42, 56, 76, 96, 98, 100), the fins being formed by a plurality of individual components stacked together.

THERMALLY ENHANCED INTEGRATED CIRCUIT CARRIER PACKAGE

COOLING BODY FOR SEMI-CONDUCTOR COMPONENTS, PROCESS FOR ITS PRODUCTION AND MOULDING TOOL FOR THIS

In a cooling body (10) of metal material, in particular a light metal alloy, for semi-conductor elements or similar components, plate-like cooling ribs (20, 20e) projecting from a base plate (12) at intervals (f) and approximately parallel to each other, protrude with a connection strip (24) into the base plate in which they are cast. A moulding tool designed for production of this cooling body (10) is formed as a casting mould (30) with a mould chamber for the base plate (12) and this mould chamber contains an area to receive the connection strips (24) of the cooling ribs (20, 20e). Two parallel side walls (34) of the casting mould (30) and intermediate layers (28) arranged parallel between them, each bordering a receiver gap (29), are arranged displaceably on at least one shaft (19) passing through them and can be moved on this to produce the compact casting mould (30) after insertion of the cooling ribs (20, 20e) in the receiver gaps (29).

METHOD AND APPARATUS FOR COOLING A CIRCUIT COMPONENT

An apparatus (41, 441) includes a thermally conductive section (141, 241, 341, 444, 541) with a side facing approximately parallel to an axis (158) and adapted to be thermally coupled to a circuit component (36), and includes a fluid supply section (121) which directs a fluid flow along the axis toward an opposite side of the thermally conductive section. The thermally conductive section splits the fluid flow into a plurality of flow portions which each flow through the thermally conductive section in a direction approximately parallel to a plane perpendicular to the axis, the flow portions exiting the thermally conductive section at a plurality of respective locations disposed along a substantial portion of the periphery of the thermally conductive section.

COOLING DEVICE AND METHOD FOR HEAT-GENERATING COMPONENTS

A cooling device having internal pathways that define separate first and second flow circuits, each configured to direct a coolant at first and second mass flow rates to cool separate first and second surfaces of the cooling device. The internal pathways further define cooling channels into which the first and second flow circuits converge to cool separate third and fourth surfaces of the cooling device. The cooling device may be used simultaneously cool multiple electronic components that have similar or different cooling requirements.

THYRISTOR ASSEMBLY RADIATOR FOR DC CONVERTER VALVE

A thyristor assembly radiator for a DC converter valve. A water discharging port of an Nth radiator is communicated with a water discharging port of an (N-2)th radiator. A water feeding port of the Nth radiator is communicated with a water feeding port of an (N+2)th radiator. Or, the water feeding port of the Nth radiator is communicated with a water feeding port of the (N-2)th radiator, and the water discharging port of the Nth radiator is communicated with a water discharging port of the (N+2)th radiator. A water discharging port of an Mth radiator is communicated with a water discharging port of an (M-2)th radiator, and a water feeding port of the Mth radiator is communicated with a water feeding port of an (M+2)th radiator. Or, the water feeding port of the Mth radiator is communicated with a water feeding port of the (M-2)th radiator, and the water discharging port of the Mth radiator is communicated with a water discharging port of the (M+2)th radiator. Water feeding ports of the ...

3-D INTEGRATED CIRCUIT LATERAL HEAT DISSIPATION

By filling an air gap between tiers (31,32) of a stacked IC device with a thermally conductive material (320) heat generated at one or more locations within one of the tiers can be laterally displaced. The lateral displacement of the heat can be along the full length of the tier and the thermal materia can be electrically insulating. Through silicon-vias (331) can be constructe at certain locations to assist in heat dissipation away from thermally troubled locations (310).

HEAT TRANSFER MEMBER

... : A heat transfer member has a heat transfer unit mounted on a mounting sheet. The heat transfer unit comprises a plurality of layers of wire mesh laminated and bonded together and to the mounting sheet. The spaces between the wires of the mesh layers or the heat transfer unit permit liquid to to pass through the heat transfer unit and so conduct heat away. A semiconductor element (IC chip) is mounted on the mounting sheet and to a base. The resulting assembly is immersed in a liquid. The planes of the mesh layers are preferably generally perpendicular to the mounting sheet and to the semiconductor element, and the material of the mounting sheet is chosen to have a thermal expansion coefficient between that of the semiconductor element and that of the heat transfer unit to reduce thermal stresses. The wires of the mesh layers are preferably of copper, as this is inexpensive and provides satisfactory heat conduction.

SEMICONDUCTOR CHIP MODULE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor chip module according to the present invention comprises a semiconductor substrate on which a wiring portion is formed, a semiconductor chip 4 mounted so as to face a circuit side up to the wiring portion, a heat sink 3, 3a, 13 with one end thereof contacted to the central portion of an upper surface of the semiconductor chip 4, 4a; and a cap 2 which has an opening 2a for exposing the other end of the heat sink 3, 3a, 13 to the outside thereof, the cap 2 enclosing all of the semiconductor chips 4, 4a. Accordingly, the heat generated from the semiconductor chips 4, 4a can be dissipated through the heat sink 3, 3a, 13 to the outside. It results in providing a semiconductor chip module without inconvenience for operation with high speed.

PIN-FIN HEAT SINK INCLUDING FLOW ENHANCEMENT

PIN FIN HEAT SINK INCLUDING FLOW ENHANCEMENT Heat dissipation performance of a pin fin heat sink is improved by utilizing a flow guide arrangement. Flow guide members are positioned relative to the outer rows of the pin fins and longitudinal to fluid flow through the pin fin field of the heat sink. A gap between a lower edge of each flow guide member and a base surface of the heat sink forms apertures allowing potentially stagnant fluid in an interior region of the pin fin field of the heat sink to communicate with fluid flowing around the exterior of the heat sink. This causes a so-called "pump" action in which the potentially stagnant fluid is drawn along with the fluid flowing around the exterior of the heat sink. (FIG. 5) ...

PIN-FIN HEAT SINK INCLUDING FLOW ENHANCEMENT

ELECTRONIC CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME

An electronic circuit device having an improved heat dissipating effect, a small size and a high reliability is provided with a metal substrate having a first surface and a second surface and a case. Electronic parts are mounted on only the first surface and the case is united with a radiating fin in one body. The metal substrate is installed in the case such that the metal substrate serves as a cap of the case and the first surface of the metal substrate faces to the case. A resin is provided to fill up a space between the metal substrate and the case, whereby heat generated from the electronic parts is dissipated to the exterior from both the radiating fin and the second surface of the metal substrate.

Semiconductor device

A semiconductor device which includes a substrate, a semiconductor element arranged on the substrate, a heat dissipation component arranged on the semiconductor element, and a mold component covering an upper part of the substrate, the semiconductor element and the heat dissipation component, wherein an area of a surface on the semiconductor element of the heat dissipation component is larger than an area of a surface on which the heat dissipation component of the semiconductor element is arranged.

Systems and Methods for Heat Dissipation Using Thermal Conduits

The addition of thermal conduits by bonding bond wires to bond pads either in a wire loop configuration or a pillar configuration can improve thermal dissipation of a fabricated die. The thermal conduits can be added as part of the normal packaging process of a semiconductor die and are electrically decoupled from the circuitry fabricated on the fabricated die. In an alternative, a dummy die is affixed to the fabricated die and the thermal conduits are affixed to the dummy die. Additionally, thermal conduits can be used in conjunction with a heat spreader.

Electronic Packaging With A Variable Thickness Mold Cap

An electronic package with improved warpage compensation. The electronic package includes a mold cap having a variable thickness. The variable thickness can have a mound or dimple design. In another embodiment, a method is provided for reducing unit warpage of an electronic package by designing the topography of a mold cap to compensate for warpage.

Method of making a semiconductor chip assembly with a post/base heat spreader and a substrate using grinding

A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post through an opening in the adhesive, mounting a substrate on the adhesive including inserting the post into an aperture in the substrate, then flowing the adhesive between the post and the substrate in the aperture, solidifying the adhesive, then grinding the post and the adhesive, then mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the substrate and thermally connecting the semiconductor device to the heat spreader.

Integrated circuit packaging system with a shield and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a first integrated circuit over the substrate; forming an encapsulant around the first integrated circuit and over the substrate; and forming a shield structure within and over the encapsulant while simultaneously forming a vertical interconnect structure.

Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and dual adhesives. The heat spreader includes a bump, a base and a ledge. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump in a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The bump extends into an opening in the first adhesive and is aligned with and spaced from an opening in the second adhesive. The base and the ledge extend laterally from the bump. The first adhesive is sandwiched between the base and the ledge, the second adhesive is sandwiched between the conductive trace and the ledge and the ledge is sandwiched between the adhesives. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.

Thermal Power Plane for Integrated Circuits

A mechanism is provided for a thermal power plane that delivers power and constitutes minimal thermal resistance. The mechanism comprises a processor layer coupled, via a first set of coupling devices, to a signaling and input/output (I/O) layer and a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the mechanism, the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the mechanism. In the mechanism, the power delivery layer comprises a plurality of conductors, a plurality of insulating materials, one or more ground planes, and a plurality of through laminate vias. In the mechanism, the signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Heat sinking element and method of treating a heat sinking element

A heat sinking element and a method of treating a heat sinking element are provided. The heat sinking element includes a metal substrate. The metal substrate is mainly composed of aluminium. A surface of the metal substrate has a plurality of micro-nano holes and a diameter of the micro-nano holes is smaller than 300 nm. The method of treating a heat sinking element includes performing an oxidation process and an etching process on the metal substrate so as to form the plurality of micro-nano holes.

Heat-dissipating device

An exemplary heat-dissipating device includes a base having a first surface, and a number of fins extending from the first surface. Each fin includes a main body perpendicular to the first surface and an extending portion perpendicularly extending from an end of the main body distal from the first surface.

Integrated heat pillar for hot region cooling in an integrated circuit

The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.

thermal management for electronic device housing

The present invention relates to a cage for thermal management and for housing an electronic module. The cage includes top, bottom and side walls joined to form an interior cavity. The side walls form an enclosure having a first panel. A thermally conductive pathway is disposed on the first panel. The enclosure receives an electronic device such as a transceiver module and a heat sink mounted on the first panel. The thermally conductive pathway is disposed between the electronic device and the heat sink so that heat from the electronic device is transmitted via the thermally conductive pathway to the heat sink.

Semiconductor device and structure for heat removal

A semiconductor device comprising power distribution wires wherein; a portion of said wires have thermal connection to the semiconductor layer and said thermal connection designed to conduct heat but to not conduct electricity.

Cooling device

A cooling device for cooling an electronic component is disclosed. The cooling device comprises a cooler comprising a base, a plurality of first fins and a plurality of second fins. The plurality of first fins extends substantially perpendicular from the base, and the plurality of second fins are secured to the base. Each of the plurality of second fins is between adjacent two of the plurality of first fins. Each of the plurality of second fins comprises a plurality of body portions and a plurality of connecting pieces. Each of the plurality of connecting pieces connects adjacent two of the plurality of body portions.

Semiconductor Device and Method of Forming a Thermally Reinforced Semiconductor Die

A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. A heat radiator is disposed on the heat conductive member. The heat conductive member thermally connecting the semiconductor element to the heat radiator reduces the risk that electromagnetic noise may be emitted from or may be incident on the semiconductor element.

Heat conduction for chip stacks and 3-d circuits

A semiconductor device assembly and method can include a single semiconductor layer or stacked semiconductor layers, for example semiconductor wafers or wafer sections (semiconductor dice). On each semiconductor layer, a diamond layer formed therethrough can aid in the routing and dissipation of heat. The diamond layer can include a first portion on the back of the semiconductor layer, and one or more second portions which extend vertically into the semiconductor layer, for example completely through the semiconductor layer. Thermal contact can then be made to the diamond layer to conduct heat away from the one or more semiconductor layers. A conductive via can be formed through the diamond layers to provide signal routing and heat dissipation capabilities.

Media content device with customized panel

A media device, which may take the form of a set top box (STB), includes a housing or chassis that incorporates an interface panel having selectively configured regions that cooperate with components mounted on a printed circuit board. The selectively configured regions of the interface panel may advantageously provide desired clearance or contact between the interface panel and one or more of the components. In addition, the selectively configured regions of the interface panel may be arranged to provide structural support to a top panel of the chassis while providing specific heat transfer pathways between the components and the chassis. In this manner, the interface panel may be controllably designed with a desired thermal mass and/or a desired thermal conductivity in specific regions of the interface panel by varying properties of the interface panel which may include, but are not limited to, the panel thickness and material.

Heat transfer apparatus

An apparatus is provided to remove heat from a heat-generating component of a computer, such as a processor. The apparatus comprises a first heat sink having a plurality of leader fins, wherein the first heat sink is thermo-conductively coupled to a heat-generating component that is coupled to a first portion of a chassis; and a second heat sink having a plurality of follower fins, wherein the second heat sink is thermo-conductively coupled to a second portion of the chassis, and wherein the plurality of follower fins are disposed in an interlaced configuration with the plurality of follower fins to promote radiative heat transfer from the leader fins to the follower fins. Optionally, one or more alignment structures may be used to facilitate the relative movement of the first and second chassis portions into an operative position in which the leader and follower fins are in the interlaced configuration. The apparatus may be used to remove heat from a heat-generating component in a closed system with little or no limited air flow.

Memory Cooler

A cooler for a memory module includes heat plates on the sides of the memory module and heat fins extending from the top of the heat plates. The heat fins are optimized according to simulated or actual airflow about the memory module inside an enclosure. The heat fins may curve diagonally outward from the memory module and their free ends may be arranged substantially parallel to the airflow so air flows over their larger lateral surfaces down to the memory module.

Electronic control unit and method of manufacturing the same

An electronic control unit is disclosed. The electronic control unit includes: a resin board; a power device that is surface-mounted on the resin board; a microcomputer that is configured to control the power device; first heat radiation means for radiating heat, the first heat radiation means being disposed on an opposite side of the resin board from the power device; and first heat conduction means for conducting the heat generated by the power device to the first heat radiation means.

Package/heatsink system for electronic device

An insulating body embeds an integrated circuit and has a mounting surface, an opposite free surface, and at least one pin exposed along an edge of the mounting surface and electrically connected to a terminal of the integrated circuit. A heatsink configured to dissipate heat produced by the integrated circuit is provided in correspondence of the free surface. The heatsink includes at least one protruding element including a connection portion partly extending in contact with the free surface and partly protruding beyond a boundary of the free surface (the connection portion having a free end being distal from the insulating body), and a mounting portion extending from the free end at least up to a plane of the mounting surface. The heatsink is further electrically connected to a terminal of the integrated circuit chip. The protruding element is placed in correspondence of the at least one pin.

Light-Reflecting Substrate, Light-Emitting-Element Mounting Substrate, Light-Emitting Device, and Method for Manufacturing a Light-Emitting-Element Mounting Substrate

A method for manufacturing a light-emitting-element mounting substrate includes a step of applying a glass paste using powder of a glass material having a softening point higher than a softening point of a glass component contained in a glass-ceramic green sheet and lower than a melting point of silver so as to cover a conductor paste which is applied to a main surface of the glass-ceramic green sheet and consists of or consists primarily of silver; and a step of coating a metal layer obtained by heating them and sintering the conductor paste, with a transparent glass layer obtained by melting and then cooling the glass paste. By using the glass paste, the reaction of silver in the conductor paste with the glass component in the glass paste upon heating is suppressed, and the metal layer can be coated with the glass layer having high transparency.

Thermal enhanced package

A method of manufacturing an integrated circuit package. The method includes attaching a first surface of a semiconductor die to a thermally and/or electrically conductive substrate, forming a plurality of die connectors on a second surface of the semiconductor die, and encapsulating the semiconductor die and the plurality of die connectors in an encapsulant material. The method also includes removing a portion of the encapsulant material to expose one or more of the plurality of die connectors, thereby forming a routing surface. The method further includes forming a plurality of conductive traces on the routing surface. Each of the plurality of conductive traces is characterized by a first portion in electrical communication with one of the plurality of die connectors and a second portion in electrical communication with a package connector.

Heat Sink Adaptor

An adaptor is provided for use with the heat sink, said heat sink comprising a base for contacting a heat source and a plurality of protrusions extending from said base. The adaptor itself comprises a base and a structure projecting therefrom. The structure is arranged to mate with one or more protrusions on the heat sink to enable heat transfer by conduction from the heat sink to the adaptor.

Thermal substrate

An organic substrate capable of providing effective heat transfer through its entire thickness by the use of parallel, linear common thermally conductive openings that extend through the substrate, the substrate having thin dielectric layers bonded together to form an integral substrate structure. The structure is adapted for assisting in providing cooling of high temperature electrical components on one side by effectively transferring heat from the components to a cooling structure positioned on an opposing side. Methods of making the substrate are also provided, as is an electrical assembly including the substrate, component and cooling structure.

Three dimensional semiconductor assembly board with bump/flange supporting board, coreless build-up circuitry and built-in electronic device

A semiconductor assembly board includes a supporting board, a coreless build-up circuitry and a built-in electronic device. The supporting board includes a bump, a flange and a via hole in the bump. The built-in electronic device extends into the via hole and is electrically connected to the build-up circuitry. The build-up circuitry extends from the flange and the built-in electronic device and provides signal routing for the built-in electronic device. The supporting board provides mechanical support, ground/power plane and heat sink for the coreless build-up circuitry.

Heat sinking plate

Provided is a heat sinking plate, the plate formed with a square-shaped opening of a predetermined length when viewed from the other direction of a rectangular metal plate by erecting four triangles obtained by diagonally and crossly cutting a square of a predetermined length to one direction of the metal plate at a predetermined first angle relative to the metal plate.

Bump-On-Leadframe Semiconductor Package With Low Thermal Resistance

In a bump-on-leadframe semiconductor package a metal bump formed on a integrated circuit die is used to facilitate the transfer of heat generated in a semiconductor substrate to a metal heat slug and then to an external mounting surface. A structure including arrays of thermal vias may be used to transfer the heat from the semiconductor substrate to the metal bump

Thermally Enhanced Structure for Multi-Chip Device

A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.

Laminated heat sinks

An apparatus includes a heat sink with a complex 3D structure. The heat sink includes a stack of metal layers. The metal layers are mechanically connected together and being separated by physical interface regions. The stack has array of channels for carrying fluid through the stack. Each channel of the array has a lateral surface formed by portions of more than one of the metal layers.

On-Chip Heat Spreader

A three dimensional (3D) stacked chip structure with chips having on-chip heat spreader and method of forming are described. A 3D stacked chip structure comprises a first die having a first substrate with a dielectric layer formed on a front surface. One or more bonding pads and a heat spreader may be simultaneously formed in the dielectric layer. The first die is bonded with corresponding bond pads on a surface of a second die to form a stacked chip structure. Heat generated in the stacked chip structure may be diffused to the edges of the stacked chip structure through the heat spreader.

3d integrated electronic device structure including increased thermal dissipation capabilities

A microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is phsyically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

THERMAL EXPANSION-ENHANCED HEAT SINK FOR AN ELECTRONIC ASSEMBLY

A heat sink and method of fabrication are provided for removing heat from an electronic component(s). The heat sink includes a heat sink base and frame. The base has a first coefficient of thermal expansion (CTE), and includes a base surface configured to couple to the electronic component to facilitate removal of heat. The frame has a second CTE, and is configured to constrain the base surface in opposing relation to the electronic component, wherein the first CTE is greater than the second CTE. At least one of the heat sink base or frame is configured so that heating of the heat sink base results in a compressive force at the base surface of the heat sink base towards the electronic component that facilitates heat transfer from the electronic component. A thermal interface material is disposed between the base surface and the electronic component. 1. A method of fabricating a thermal expansion-enhanced heat sink comprising:providing a heat sink base comprising a base surface configured to couple to a surface of a heat-generating electronic component to facilitate removal of heat from the heat-generating electronic component, the heat sink base having a first coefficient of thermal expansion; andproviding a frame configured to couple to the heat-generating electronic component and constrain the base surface of the heat sink base in opposing relation to the surface of the heat-generating electronic component, the frame having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion of the heat sink base is greater than the second coefficient of thermal expansion of the frame, and wherein at least one of the heat sink base or the frame is configured so that heating of the heat sink base expands the heat sink base relative to the frame and results in a force component at the base surface of the heat sink base towards the surface of the heat-generating electronic component that facilitates heat transfer from the surface of the heat- ...

Light emitting diodes and substrates

A thin layer substrate has a plurality of micron sized electrically conductive whisker components which are arranged in parallel and extending from one surface of the substrate to another surface to provide electrically conductive paths though the substrate. Such a substrate may be usable for micron sized LEDs.

SEMICONDUCTOR DEVICE INCLUDING CLADDED BASE PLATE

A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1. 1. A semiconductor device comprising:a semiconductor chip joined with a substrate; the second metal layer comprises a sub-layer that has no pins and no pin-fins;', 'the first metal layer comprises a first thickness;', 'the sub-layer comprises a second thickness; and', 'the ratio between the first thickness and the second thickness is at least 4:1., 'a base plate joined with the substrate, the base plate comprising a first metal layer clad to a second metal layer, the second metal layer deformed to provide a pin-fin or fin cooling structure, wherein'}2. The semiconductor device of claim 1 , wherein the ratio between the first thickness and the second thickness is at least 10:1.3. The semiconductor device of claim 1 , wherein the second thickness is between 0.2 mm and 0.5 mm.4. The semiconductor device of claim 1 , wherein the first metal layer comprises copper and the second metal layer comprises aluminum.5. The semiconductor device of claim 1 , wherein the first metal layer has a thickness between 2.5 mm and 10 mm.6. The semiconductor device of claim 1 , further comprising:a third metal layer clad to the first metal layer opposite the second metal layer.7. The semiconductor device of claim 6 , wherein the third metal layer has a thickness between 1 μm and 0.1 mm.8. The semiconductor device of claim 6 , wherein the third metal layer comprises one of silver and palladium.9. The semiconductor device of claim 6 , wherein the substrate is one of diffusion soldered ...

Semiconductor Device Assembly Utilizing a DBC Substrate

A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. 157-. (canceled)5868-. (canceled)69. An assembly comprising: first and second conductive layers insulated from one another, said first conductive layer having a depression therein and a rim at least partially surrounding a bottom surface of said depression;', 'a semiconductor die situated in said depression and having an electrode electrically connected to said bottom surface of said depression;, 'first and second semiconductor devices, each of said first and second semiconductor devices comprisinga support substrate including a patterned conductive layer electrically connecting said first semiconductor device and said second semiconductor device, said first and second semiconductor devices each being electrically and mechanically connected to said patterned conductive layer.70. The assembly of claim 69 , wherein said patterned conductive layer is electrically connecting said rim of said first semiconductor device and said rim of said second semiconductor device.71. The assembly of claim 69 , wherein said support substrate further comprises a bottom conductive layer that is insulated from said patterned conductive layer.72. The assembly of claim 69 , a heat sink or plate mechanically and thermally connected to said second conductive layer of each of said first and second semiconductor devices.73. The assembly of claim 69 , comprising an EMI screening plate situated over said first and second ...

Dual Heat Sinks For Distributing A Thermal Load

Dual heat sinks, apparatuses, and methods for installing a dual heat sink for distributing a thermal load are provided. Embodiments include a top base to couple with a first integrated circuit of a first board and to receive a first thermal load from the first integrated circuit; a bottom base to couple with a second integrated circuit of a second board and to receive a second thermal load from the second integrated circuit; and a thermal dissipating structure coupled between the top base and the bottom base, the thermal dissipating structure to receive and distribute the first thermal load and the second thermal load from the top base and the bottom base; wherein a height of the thermal dissipating structure is adjustable so as to change a distance separating the top base and the bottom base.

Semiconductor Package with Conductive Heat Spreader

A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.

Semiconductor device

A semiconductor device includes a structure in which a semiconductor element (chip) is mounted in a cavity formed in a wiring board with an adhesive interposed between the chip and a bottom surface of the cavity, and electrode terminals of the chip are connected via wires to wiring portions formed on the board around the cavity. The chip is mounted in close contact with a side wall of the cavity, the side wall being near a region where a wiring for higher frequency compared with other wirings within the wiring portion is formed. A recessed portion is provided in a region of the bottom surface of the cavity, and a thermal via extending from the bottom surface of the recessed to the outside of the board is provided, the region being near a portion where the chip is in close contact.

Terminal Box

A plurality of terminal plates are arranged in a row in the interior of a box body. Neighboring terminal plates are electrically connected by a diode. The diode is provided with a first terminal part that is laid on, soldered to, and electrically connected to the first terminal plate. A slit is provided formed along the outer perimeter of a region on which the first terminal part is laid on the first terminal plate. 1. A terminal box , comprising:a box body;a plurality of terminal plates arranged in a row in the interior of the box body; anda diode for electrically connecting the terminal plates, whereinthe diode has a first terminal part, the first terminal part being laid on, soldered to, and thereby electrically connected to a first terminal plate; andthe first terminal plate has a slit formed along an outer perimeter of a region on which the first terminal part is laid.2. The terminal box according to claim 1 , wherein the first terminal plate comprises a positioning piece capable of making contact with the first terminal part and thereby determining the position at which the first terminal part is laid on the first terminal plate.3. The terminal box according to claim 1 , whereinthe diode comprises a body part and a second terminal part, the second terminal part being electrically connected to a second terminal plate; andthe second terminal plate has an anchoring part to which the second terminal part is soldered, and a linking part for linking the anchoring part to the body part so as to allow relative displacement.4. The terminal box according to claim 3 , whereinthe second terminal plate comprises a metal plate; andthe linking part comprises a band-plate portion formed by being punched out of the second terminal plate along with the anchoring part.5. The terminal box according to claim 4 , wherein the band-plate portion comprises a bent part claim 4 , the bent part being bent and deformed in the direction of band thickness. 1. Field of the InventionThe ...

Transmission line transition having vertical structure and single chip package using land grip array coupling

An apparatus for a single chip package using Land Grid Array (LGA) coupling is provided. The apparatus includes a multi-layer substrate, at least one integrated circuit chip, and a Printed Circuit Board (PCB). The a multi-layer substrate has at least one substrate layer, has at least one first chip region and at least one second chip region in a lowermost substrate layer, configures a transmission line transition of a vertical structure for transmitting a signal from at least one integrated circuit chip coupled in the first chip region in a coaxial shape or in a form of a Co-Planar Waveguide guide (CPW), and has an LGP coupling pad for connecting with a Printed Circuit Board (PCB) in the lowermost layer. The at least one integrated circuit chip is coupled in the first chip region and the second chip region. The PCB is connected with the multi-layer substrate using the LGA coupling via the LGA coupling pad.

Heat sink assembly

A heat sink assembly includes a heat sink, a base, and a number of fasteners. The heat sink includes a bottom plate defining a number of holes. The base is mounted to a bottom of the bottom plate. A number of through holes aligning with the holes of the bottom plate are defined in the base. A number of tapered guiding surfaces is formed on a bottom of the base. Each guiding surface bounds a corresponding one of the through holes. A diameter of each guiding surface gradually increases in a downward direction, facilitates the entry of securing screws. The fasteners are mounted to the heat sink. Bottoms of the fasteners are respectively extended through the holes of the heat sink and received in the through holes of the base. An internally-threaded hole is defined in a bottom of each fastener.

Semiconductor package with integrated substrate thermal slug

To reduce the thermal stresses that may be caused by a difference in thermal expansion coefficients between a molded casing and an active side of a semiconductor device embedded in the molded casing, and thus reduce the number of corresponding failures caused by the thermal stresses, the active side of the semiconductor device is arranged face-down, towards a substrate supporting the semiconductor device. The semiconductor device includes a through via that electrically connects the active side of the semiconductor device to a passive side of the semiconductor device. A wire bond electrically connects the passive side of the semiconductor device to the substrate. To increase the dissipation of heat generated in the semiconductor device, a thermally conductive slug may be disposed in the substrate, and the active side of the semiconductor device may be attached to the thermally conductive slug.

Surface acoustic wave device

A surface acoustic wave device having high heat radiation performance is provided. A surface acoustic wave device includes a piezoelectric substrate, IDT electrodes, a cover, and wiring lines. The IDT electrodes are arranged on a main surface of the piezoelectric substrate. The cover is joined to the main surface. The wiring lines extend to join portions of the main surface and the cover. The cover is provided with through-holes facing the wiring lines, respectively. The surface acoustic wave device further includes under-bump metals arranged in the through-holes, respectively, and bumps arranged on the under-bump metals, respectively. In a plan view, each of the under-bump metals is provided in a region larger than a joint portion of each of the under-bump metals and the corresponding one of the bumps

Flexible circuit board

A flexible circuit board includes a base film formed by a metallic material, a first protective film formed on a first surface of the base film, and a circuit pattern adhered to the first protective film through an adhesive film. Projections and recesses for heat release are formed on a second surface that is a surface on the opposite side of the first surface of the base film.

POWER SEMICONDUCTOR MODULE AND POWER UNIT DEVICE

A power semiconductor module includes: a plurality of first metal plates arranged in the same planar state; a power semiconductor chip mounted on the first metal plate; and an overbridge-shaped second metal plate which is composed of bridge frame sections and leg sections that support the bridge frame sections, the leg sections being for appropriately performing solder bonding between electrodes of the power semiconductor chips and between the electrode of the power semiconductor chip and the first metal plate, the power semiconductor module being configured by a resin package in which these members are sealed with electrically insulating resin. In the power semiconductor module, the solder bonding section of the leg section is formed in a planar shape by bending process and is provided at a position lower than the bridge frame section. 110-. (canceled)11. A power semiconductor module comprising:a plurality of first metal plates arranged in the same planar state;a power semiconductor chip mounted on said first metal plate; andan overbridge-shaped second metal plate which is composed of bridge frame sections and leg sections that support the bridge frame sections, the leg sections being for appropriately performing solder bonding between electrodes of said power semiconductor chips and between said electrode of said power semiconductor chip and said first metal plate,said power semiconductor module being configured by a resin package in which these members are sealed with electrically insulating resin,wherein the solder bonding section of the leg section is formed in a planar shape by bending process and is provided at a position lower than the bridge frame section.12. The power semiconductor module according to claim 11 ,wherein said second metal plate is formed with a protrusion, which controls the amount of solder, on both of or on either one of a bonding surface with said electrode of said power semiconductor chip and a bonding surface with said first metal plate ...

SEMICONDUCTOR DEVICE

A semiconductor device is disclosed that includes an insulation substrate, a metal wiring layer, a semiconductor element, a heat sink, and a stress relaxation member located between the insulation substrate and the heat sink. The heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals. The stress relaxation member includes a stress absorbing portion formed by through holes extending through the entire thickness of the stress relaxation member. Each hole is formed such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the arranging direction of the partitioning walls. 1. A semiconductor device comprising:an insulation substrate having a first surface and a second surface that is opposite to the first surface;a metal wiring layer joined to the first surface of the insulation substrate;a semiconductor element joined to the metal wiring layer;a heat sink arranged on the second surface of the insulation substrate; anda stress relaxation member made of a material having a high thermal conductivity, the stress relaxation member being located between the insulation substrate and the heat sink in such manner as to couple the insulation substrate and the heat sink such that heat can be conducted therebetween,wherein the heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals,wherein the stress relaxation member has a stress absorbing portion that is formed by a through hole, the through hole extending through the entire thickness of the stress relaxation member, andwherein the through hole is a rectangular hole having a long side, which extends along the longitudinal direction of the partitioning walls, and a short side, which extends along the arranging direction of the partitioning walls, such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the ...

INTEGRATED COLD PLATE FOR ELECTRONICS

A cold plate has a base plate connected to a cover to form an enclosure, with an inlet and outlet nozzle penetrating the enclosure for coolant flow. The base plate includes a top surface opposite a bottom surface, Where the top surface includes enhancements positioned within the enclosure under the cover. The base plate has an inlet trough and an outlet trough that serve as headers, so the inlet nozzle connects to the inlet trough, and coolant from the inlet trough can flow through the enhanced surface, collect in the outlet trough, and then exit the cold plate through the outlet nozzle. The enhanced surface includes enhancements that begin at a point in between the bottom surface and the top surface, and the enhancements extend to a point above the top surface. 1. A cold plate comprising: a plurality of enhancements on the top surface, where the enhancements are monolithic with the base plate;', 'ii. an inlet trough formed in the base plate adjacent to the enhancements;', 'iii. an outlet trough formed in the base plate adjacent to the enhancements;', 'iv. a base plate inlet nozzle indent formed in the base plate, where the base plate inlet nozzle indent extends from the edge to the inlet trough;', 'v. a base plate outlet nozzle indent formed in the base plate, where the base plate outlet nozzle indent extends from the edge to the outlet trough, 'a. a base plate with a top surface, a bottom surface, and an edge, where the base plate further comprises i. a dome extending over the base plate to form an enclosure, and where the enhancements are within the enclosure;', 'ii. a cover inlet nozzle indent aligned with the base plate nozzle indent;', 'iii. a cover outlet nozzle indent aligned with the base plate outlet nozzle indent;, 'b. a cover connected to the base plate, where the cover further comprises;'}c. an inlet nozzle connected to the base plate and cover, where the inlet nozzle is positioned between the base plate inlet nozzle indent and the cover inlet nozzle ...

Device with pillar-shaped components

A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to any of the substrate and the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part to the top part to connect the bottom part and the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, the ring-like projection part being formed in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

THROUGH-HOLE ELECTRONIC DEVICE WITH DOUBLE HEAT-SINK

An electronic device includes a first chip and a second chip, where each chip has a first conduction terminal on a first surface and a second conduction terminal on a second surface. An insulating body surrounds the first and second chip, a first heat-sink coupled with the first conduction terminals of the first and second chip, and a second heat-sink coupled with the second conduction terminals of the first and second chip. A portion of the first heat-sink and/or the second heat-sink being exposed from the insulating body. The electronic device includes a first conductive lead and a second conductive lead exposed from the insulating body for through-hole mounting of the electronic device on an electronic board, the first conductive lead being coupled with the first heat-sink and the second conductive lead being coupled with the second heat-sink. 1. An electronic device , comprising:a first chip and a second chip of semiconductor material each of which includes electronic components, each chip including a first conduction terminal on a first surface of the chip and a second conduction terminal on a second surface of the chip opposite the first surface of the chip; andan insulating body encapsulating the first chip and the second chip; anda first heat-sink electrically coupled with the first conduction terminal of said first chip and with the first conduction terminal of said second chip;a second heat-sink electrically coupled with the second conduction terminal of said first chip and with the second conduction terminal of said second chip, at least one between the first heat-sink and the second heat-sink including a portion exposed from the insulating body; anda first conductive lead and a second conductive lead configured to extend from the insulating body and configured to mount the electronic device with a through-hole mount on an electronic board, the first conductive lead being electrically coupled with the first heat-sink and the second conductive lead being ...

Power Module with Directly Attached Thermally Conductive Structures

A power module includes a substrate having an electrically insulative member with opposing first and second metallized sides and one or more semiconductor die attached to the first metallized side of the substrate. A plurality of thermally conductive structures are laterally spaced apart from one another and individually attached directly to the second metallized side of the substrate so that the plurality of thermally conductive structures extend outward from the second metallized side. 1. A power module , comprising:a substrate comprising an electrically insulative member with opposing first and second metallized sides;one or more semiconductor die attached to the first metallized side of the substrate; anda plurality of thermally conductive structures laterally spaced apart from one another and individually attached directly to the second metallized side of the substrate so that the plurality of thermally conductive structures extend outward from the second metallized side.2. A power module according to claim 1 , wherein each thermally conductive structure is individually welded to the second metallized side of the substrate.3. A power module according to claim 1 , wherein each thermally conductive structure has a length measured from the second metallized side of the substrate extending outward which ranges from 0.5 mm to 5 cm and a width which ranges from 0.1 mm to 3 mm.4. A power module according to claim 3 , wherein the length of one or more of the plurality of thermally conductive structures is greater than the width.5. A power module according to claim 3 , wherein the width of one or more of the plurality of thermally conductive structures is greater than the length.6. A power module according to claim 3 , wherein the plurality of thermally conductive structures have at least one of variable lengths and variable widths.7. A power module according to claim 1 , wherein each thermally conductive structure has a cylindrical claim 1 , columnar or hexagonal shape ...

Method of making a heat radiating structure for high-power led

A method of making a heat radiating structure for high-power LED comprises: (1) preparing a PCB board, a heat conducting plate having a heat conducting column at one side thereof and a heat radiating plate; (2) providing a locating hole penetrating both sides of the PCB board, and welding a copper plate to one side of the PCB board, while soldering an electrode welding leg to the other side of the PCB board; (3) putting the heat conducting column into the locating hole, and soldering the copper plate and the heat conducting plate together; (4) placing the one-piece of the heat conducting plate and the PCB board produced by the step (3) on a pressing equipment to adjust the height of the conducting column; (5) pasting the inner side of the heat radiating plate on the other side of the heat conducting plate fixedly.

Semiconductor device

To provide a semiconductor device characterized in that lands for mounting thereon solder balls placed in an inner area of a chip mounting area have an NSMD structure. This means that lands for mounting thereon solder balls placed in an area of the back surface of a through-hole wiring board overlapping with a chip mounting area in a plan view have an NSMD structure. According to the invention, a semiconductor device to be mounted on a mounting substrate with balls has improved reliability.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

A semiconductor device has, at least, a cooling base and a plurality of insulating substrates with conductive patterns fixed onto the cooling base through a solder. A solder pool portion is provided on the cooling base to contact a position of the cooling base directly below an edge of each of the insulating substrates with conductive patterns with a shortest distance from a center point of the cooling base. 1. A semiconductor device , comprising:at least, a cooling base and a plurality of insulating substrates with conductive patterns fixed onto the cooling base through a solder,wherein a solder pool portion is provided on the cooling base to contact a position of the cooling base directly below an edge of each of the insulating substrates with conductive patterns, with a shortest distance from a center point of the cooling base.2. A semiconductor device according to claim 1 , wherein a depression is provided in a bottom portion of the solder pool portion.3. A method of manufacturing a semiconductor device having at least claim 1 , a cooling base and a plurality of insulating substrates with conductive patterns fixed onto the cooling base through a solder claim 1 , comprising:a step of providing a solder pool portion on the cooling base to contact with places below the insulating substrates with conductive patterns, where a molten solder solidifies most slowly.4. A method of manufacturing a semiconductor device having at least claim 1 , a cooling base and a plurality of insulating substrates with conductive patterns fixed onto the cooling base through a solder claim 1 , comprising:a step of placing the plurality of insulating substrates with conductive patterns on the cooling base through a first molten solder and placing a second molten solder in a solder pool portion to contact with the first molten solder; anda step of placing a ring-shaped cooling plate contacting with an outer peripheral portion of the cooling base on a cooler, placing the cooling base on the ...

Heat-sink device intended for at least one electronic component and corresponding method

The present invention relates to a heat-sink device intended for at least one electronic component (12), including: heat-sink means; a substrate (11) for the at least one electronic component (12), said substrate covering the heat-sink means; and thermal coupling means provided between the substrate and the heat-sink means and made from a material different from that of the heat-sink means. According to the invention, the heat-sink means consist of a set of independent fins (10), and the thermal-coupling means (13) are made from a heat-conductive polymer material and also serve as mechanical coupling means between the substrate (11) and the fins (10).

Deep trench heat sink

A method including providing a silicon-on-insulator (SOI) substrate including a SOI layer, a buried oxide layer, and a base layer; the buried oxide layer is located below the SOI layer and above the base layer, and the buried oxide layer insulates the SOI layer from the base layer; etching a deep trench into the SOI substrate, the deep trench having a sidewall and a bottom, the deep trench extends from a top surface of the SOI layer, through the buried oxide layer, down to a location within the base layer; forming a dielectric liner on the sidewall and the bottom of the deep trench; forming a conductive fill material on top of the dielectric liner and substantially filling the deep trench, the fill material being thermally conductive; and transferring heat from the SOI layer to the base layer via the fill material.

SEMICONDUCTOR CHIP INCLUDING HEAT RADIATION MEMBER, AND DISPLAY MODULE

A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate. 1. A semiconductor chip comprising:a circuit region on a semiconductor substrate, the circuit region having an integrated semiconductor circuit; anda heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate.2. The semiconductor chip of claim 1 , wherein the plurality of heat radiation fins have a plate shape.3. The semiconductor chip of claim 1 , wherein the plurality of heat radiation fins have a pole shape.4. The semiconductor chip of claim 1 , wherein the plurality of heat radiation fins have different heights.5. The semiconductor chip of claim 1 , wherein the plurality of heat radiation fins include a plurality of plate-shaped heat radiation fins sequentially spaced apart from each other on the upper surface of the semiconductor substrate in a direction that is one of perpendicular and parallel to a side surface of the semiconductor chip.6. The semiconductor chip of claim 1 , wherein the heat radiation member includes a plurality of pole-shaped heat radiation fins sequentially spaced apart from each other on the upper surface of the semiconductor substrate in a direction that is one of perpendicular and parallel to a side surface of the semiconductor chip.7. The semiconductor chip of claim 1 , wherein the heat radiation member further comprises a body on the semiconductor substrate claim 1 , and the body is connected to the ...

Heat sink

A heat sink includes a plurality of fins. Each of the plurality of fins includes a fin body and a bent part located on one side of the fin body. The bent part of each of the plurality of fins includes an extension piece slanted relative to the fin body.

Semiconductor Module Arrangement and Method for Producing and Operating a Semiconductor Module Arrangement

A semiconductor module arrangement includes a semiconductor module having a top side, an underside opposite the top side, and a plurality of electrical connection contacts formed at the top side. The semiconductor module arrangement additionally includes a printed circuit board, a heat sink having a mounting side, and one or a plurality of fixing elements for fixing the printed circuit board to the heat sink. Either a multiplicity of projections are formed at the underside of the semiconductor module and a multiplicity of receiving regions for receiving the projections are formed at the mounting side of the heat sink, or a multiplicity of projections are formed at the mounting side of the heat sink and a multiplicity of receiving regions for receiving the projections are formed at the underside of the semiconductor module. In any case, each of the projections extends into one of the receiving regions. 1. A semiconductor module arrangement , comprising:a semiconductor module having a top side, an underside opposite the top side, and a plurality of electrical connection contacts formed at the top side;a printed circuit board;a heat sink having a mounting side; andone or more fixing elements for fixing the printed circuit board to the heat sink;wherein either a multiplicity of projections are formed at the underside of the semiconductor module and a multiplicity of receiving regions for receiving the projections are formed at the mounting side of the heat sink; or a multiplicity of projections are formed at the mounting side and a multiplicity of receiving regions for receiving the projections are formed at the underside, each of the projections extend into one of the receiving regions;wherein the semiconductor module is electrically conductively connected to and mechanically held by the printed circuit board at the connection contacts;wherein the printed circuit board is connected to the heat sink by the one or more fixing elements; andwherein the semiconductor module ...

Electronic apparatus

Provided is an electronic apparatus including a cooling fan and a cover configuring an outer wall of an air flow path and having a heat sink arranged therein, and effectively utilizing a frame as a member for heat radiation. A cooling fan 40 is arranged on the opposite side of a circuit board across an upper frame 20 and attached to the upper frame 20 . The electronic apparatus includes a cover having a shape for covering the air flow path and defining a wall of the air flow path together with the upper frame 20 . Heat sinks 61 and 62 are arranged on the inner side of the cover 50.

Heat sink assembly

A heat sink assembly includes a printed circuit board, a heat sink, and clamp, and at least two clamp retainers. The printed circuit board has at least two holes extending from a front surface to a back surface of the printed circuit board. The heat sink is mounted to the printed circuit board. The heat sink has a bottom side and a plurality of fins extending from a top side. The clamp is coupled to the printed circuit board. The clamp includes a beam extending across the heat sink and between adjacent fins, at least two legs extending through the at least two holes of the printed circuit board, and a foot extending from each of the at least two legs contacting the back surface of the printed circuit board. The at least two clamp retainers extend through the at least two holes adjacent to the at least two legs.

THERMAL EXPANSION-ENHANCED HEAT SINK FOR AN ELECTRONIC ASSEMBLY

A heat sink and method of fabrication are provided for removing heat from an electronic component(s). The heat sink includes a heat sink base and frame. The base has a first coefficient of thermal expansion (CTE), and includes a base surface configured to couple to the electronic component to facilitate removal of heat. The frame has a second CTE, and is configured to constrain the base surface in opposing relation to the electronic component, wherein the first CTE is greater than the second CTE. At least one of the heat sink base or frame is configured so that heating of the heat sink base results in a compressive force at the base surface of the heat sink base towards the electronic component that facilitates heat transfer from the electronic component. A thermal interface material is disposed between the base surface and the electronic component. 1. A method of fabricating a thermal expansion-enhanced heat sink comprising:providing a heat sink base comprising a base surface configured to couple to a surface of a heat-generating electronic component to facilitate removal of heat from the heat-generating electronic component, the heat sink base having a first coefficient of thermal expansion;providing a frame configured to couple to the heat-generating electronic component and constrain the base surface of the heat sink base in opposing relation to the surface of the heat-generating electronic component, the frame having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion of the heat sink base is greater than the second coefficient of thermal expansion of the frame, and wherein at least one of the heat sink base or the frame is configured so that heating of the heat sink base expands the heat sink base relative to the frame and results in a force component at the base surface of the heat sink base towards the surface of the heat-generating electronic component that facilitates heat transfer from the surface of the heat- ...

SEMICONDUCTOR DEVICE

A semiconductor device comprises: a semiconductor package having a top surface, a bottom surface, and a through hole provided from the top surface to the bottom surface; and an electrode inserted into the through hole of the semiconductor package. The semiconductor package includes: an insulating substrate; a semiconductor chip on the insulating substrate; an electrode pattern on the insulating substrate and connected to the semiconductor chip; a resin sealing the insulating substrate, the semiconductor chip, and the electrode pattern; and an electrode section on an inner wall of the through hole and connected to the electrode pattern. The through hole penetrates the insulating substrate and the resin. The electrode inserted into the through hole is connected to the electrode section inside the semiconductor package. 1. A semiconductor device comprising:a semiconductor package having a top surface, a bottom surface, and a through hole provided from the top surface to the bottom surface; andan electrode inserted into the through hole of the semiconductor package,wherein the semiconductor package includes:an insulating substrate;a semiconductor chip on the insulating substrate;an electrode pattern on the insulating substrate and connected to the semiconductor chip;a resin sealing the insulating substrate, the semiconductor chip, and the electrode pattern; andan electrode section on an inner wall of the through hole and connected to the electrode pattern,the through hole penetrates the insulating substrate and the resin, andthe electrode inserted into the through hole is connected to the electrode section inside the semiconductor package.2. The semiconductor device according to claim 1 , further comprising:a heat spreader on the bottom surface of the semiconductor package; andan insulating material under the through hole and insulating the electrode from the heat spreader.3. The semiconductor device according to claim 1 , wherein the semiconductor package includes a ...

Heat Dissipater

Embodiments of the present invention provide a heat dissipater and relate to the communications field. The heat dissipater includes a sub heat dissipater, a connecting apparatus, and a shared bracket; the sub heat dissipater is connected to the shared bracket through the connecting apparatus; the sub heat dissipater includes a first heat conducting surface, and the sub heat dissipater contacts a first heat source through the first heat conducting surface to dissipate heat for the first heat source; the shared bracket includes a second heat conducting surface, and the shared bracket contacts a second heat source through the second heat conducting surface to dissipate heat for the second heat source; and the second heat conducting surface and the sub heat dissipater are disposed in different positions of the shared bracket respectively. 1. A heat dissipater , comprising:a sub heat dissipater;a connecting apparatus; anda shared bracket;wherein the sub heat dissipater is connected to the shared bracket through the connecting apparatus,wherein the sub heat dissipater comprises a first heat conducting surface,wherein the sub heat dissipater contacts a first heat source through the first heat conducting surface to dissipate heat for the first heat source,wherein the shared bracket comprises a second heat conducting surface,wherein the shared bracket contacts a second heat source through the second heat conducting surface to dissipate heat for the second heat source, andwherein the second heat conducting surface and the sub heat dissipater are disposed in different positions of the shared bracket.2. The heat dissipater according to claim 1 , wherein the sub heat dissipater comprises a substrate and a heatsink claim 1 , and wherein the first heat conducting surface of the sub heat dissipater and the heatsink are formed at two opposite sides of the substrate.3. The heat dissipater according to claim 2 , wherein the substrate of the sub heat dissipater comprises a connecting ...

HORIZONTALLY AND VERTICALLY ALIGNED GRAPHITE NANOFIBERS THERMAL INTERFACE MATERIAL FOR USE IN CHIP STACKS

The chip stack of semiconductor chips with enhanced cooling apparatus includes a first chip with circuitry on a first side and a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The apparatus further includes a thermal interface material pad placed between the first chip and the second chip, wherein the thermal interface material pad includes nanofibers aligned parallel to mating surfaces of the first chip and the second chip and nanofibers aligned perpendicular to mating surfaces of the first chip and the second chip 1. A method for enhancing the cooling of a chip stack of semiconductor chips , comprising:creating a first chip with circuitry on a first side;creating a second chip electrically and mechanically coupled to the first chip by a grid of connectors; andplacing a thermal interface material pad between the first chip and the second chip, wherein the thermal interface material pad includes nanofibers aligned parallel to mating surfaces of the first chip and the second chip and nanofibers aligned perpendicular to mating surfaces of the first chip and the second chip.2. The method of claim 1 , wherein the nanofibers aligned parallel to mating surfaces of the first chip and the second chip draw heat from the first chip and the second chip to the edges of the thermal interface material pad and nanofibers aligned perpendicular to mating surfaces of the first chip and the second chip creates a vertical heat transmission channel between the mating surfaces of the first chip and the second chip.3. The method of claim 2 , wherein the vertical heat transmission block is created by a localized heating of an area in the thermal interface material pad and using a magnetic mask to align nanofibers perpendicular to mating surfaces of the first chip and the second chip in the heated area.4. The method of claim 2 , wherein the vertical heat transmission block is created by cutting into pieces a thermal interface material with ...

Heat sink

A heat sink includes a bottom plate, a number of first fins extending up from the bottom plate, and a number of second fins. The second fins are detachably connected to tops of the corresponding first fins.

Semiconductor Package with Heat Spreader

A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.

COOLING DEVICE AND SEMICONDUCTOR DEVICE

A cooling device includes a base and a plurality of radiator fins. The base includes an exterior, an interior, an inlet, and an outlet. A heat generation element is connected to the exterior of the base. The radiator fins are located near the heat generation element in the interior of the base. The radiator fins are arranged from the inlet to the outlet. Each radiator fin has a sidewise cross-section with a dimension in a flow direction of the cooling medium and a dimension in a lateral direction orthogonal to the flow direction of the cooling medium. The dimension in the flow direction is longer than the dimension in the lateral direction. The radiator fins are separated from one another by a predetermined distance in the lateral direction. 1. A cooling device comprising:a base including an exterior, an interior, an inlet, and an outlet, wherein a heat generation element is connected to the exterior; anda plurality of pin-shaped radiator fins located in the interior of the base at a portion near the heat generation element, wherein the radiator fins are arranged from the inlet to the outlet, whereinthe cooling device cools the heat generation element with a cooling medium flowing in the interior of the base from the inlet to the outlet,each of the radiator fins includes a sidewise cross-section having a dimension in a flow direction of the cooling medium and a dimension in a lateral direction orthogonal to the flow direction of the cooling medium, and the dimension in the flow direction is longer than the dimension in the lateral direction, andthe radiator fins are separated from one another by a predetermined distance in the lateral direction.2. The cooling device according to claim 1 , wherein the sidewise cross-section includes an outline including two sides claim 1 , the two sides are directed from an upstream side to a downstream side in the flow direction of the cooling medium and extended away from each other in the lateral direction of the corresponding ...

Thermally Enhanced Package-on-Package (PoP)

A method and structure for providing improved thermal management in multichip and package on package (PoP) applications. A first substrate attached to a second smaller substrate wherein the second substrate is encircled by a heat ring attached to the first substrate, the heat ring comprising heat conducting materials and efficient heat dissipating geometries. The first substrate comprises a heat generating chip and the second substrate comprises a heat sensitive chip. A method is presented providing the assembled structure with increased heat dissipation away from the heat sensitive chip.

SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE USED THEREFOR

A semiconductor module includes a first heat sink member, a semiconductor device, a second heat sink member, a lead frame, a second sealing member. The semiconductor device includes a semiconductor element, a first sealing member for covering the semiconductor element, a first wiring and a second wiring electrically connected to the semiconductor element, and a rewiring layer on the semiconductor element and the sealing member. The second heat sink member is disposed on the semiconductor device. The lead frame is electrically connected to the semiconductor device through a bonding member. The second sealing member covers a portion of the first heat sink member, the semiconductor and a portion of the second heat sink member. A surface of the second heat sink member faces the semiconductor device. The semiconductor device has a portion protruded from an outline of the second surface sink member. 1. A semiconductor module comprising:a first heat sink member; a semiconductor element,', 'a first sealing member covering the semiconductor element,', 'a first wiring and a second wiring electrically connected to the semiconductor element, and', 'a rewiring layer disposed on the semiconductor element and the sealing member;, 'a semiconductor device including'}a second heat sink member disposed on the semiconductor device;a lead frame electrically connected to the semiconductor device through a bonding member; anda second sealing member covering a portion of the first heat sink member, the semiconductor and a portion of the second heat sink member,wherein the second heat sink member has a first surface and a second surface,wherein the second surface of the second heat sink member faces the semiconductor device,wherein the semiconductor device has a portion protruded from an outline of the second surface of the second heat sink member, andwherein the second wiring has an end extending to the portion of the semiconductor device protruded from the outline of the second surface of ...

SEMICONDUCTOR DEVICE

In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator. 1. A semiconductor device comprising:a first semiconductor element;a second semiconductor element connected in series with the first semiconductor element;a first terminal;a second terminal, the second terminal and the first terminal allowing a current to flow between the second terminal and the first terminal;a first metal plate arranged to face both the first semiconductor element and the second semiconductor element and electrically connected to the second terminal;a second metal plate arranged to face the first metal plate and to interpose the first semiconductor element between the first metal plate and the second metal plate, and electrically connected to the first terminal;a third metal plate arranged to face the first metal plate and to interpose the second semiconductor element between the first metal plate and the third metal plate; anda sealing resin body covering the first semiconductor element, the second semiconductor element, the first metal plate, the second meal plate and the third metal plate, whereinthe second semiconductor element ...

THERMALLY CONDUCTIVE SHEET, CURED PRODUCT THEREOF, AND SEMICONDUCTOR DEVICE

A thermally conductive sheet includes a thermosetting resin (A) and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet, when a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material (B) that is included in an incineration residue after a cured product of the thermally conductive sheet is heated at 700° C. for four hours and is incinerated, a pore diameter distribution curve, that is measured through the mercury intrusion technique and is plotted with a pore diameter R as a horizontal axis and a logarithmic derivative of a pore volume (dV/d log R) as a vertical axis, has a peak (P) in the range where the pore diameter R is greater than or equal to 1.0 μm and is less than or equal to 10.0 μm, and the peak (P) is configured of two or more overlapping peaks. 1. A thermally conductive sheet that includes a thermosetting resin and an inorganic filler material which is dispersed in the thermosetting resin ,wherein when a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material that is included in an incineration residue after a cured product of the thermally conductive sheet is heated at 700° C. for four hours and is incinerated,a pore diameter distribution curve, that is measured through the mercury intrusion technique and is plotted with a pore diameter R as a horizontal axis and a logarithmic derivative of a pore volume (dV/d log R) as a vertical axis,has a peak (P) in the range where the pore diameter R is greater than or equal to 1.0 μm and is less than or equal to 10.0 μm, andthe peak (P) is configured of two or more overlapping peaks.2. The thermally conductive sheet according to claim 1 ,wherein a cumulative pore volume V1 in the range where the pore diameter R is greater than or equal to 1.0 μm and less than or equal to 10.0 μm is greater than or equal to 0.1 mL/g and less than or equal to 2.0 ...

METHODS OF DIRECT COOLING OF PACKAGED DEVICES AND STRUCTURES FORMED THEREBY

Methods of forming microelectronic package structures/modules, and structures formed thereby, are described. Structures formed herein may include a die disposed on a substrate; a cooling solution comprising a first surface and a second surface opposite the first surface, wherein the second surface is disposed on a backside of the die disposed on a package substrate. A lid comprising an outer surface is disposed on the first surface of the cooling solution, wherein the lid includes a plurality of fins disposed on an inner surface of the lid. A solder is disposed between the outer surface of the lid and the first surface of the cooling solution. 1. A microelectronic package structure comprising:a die on a substrate;a cooling solution comprising a first surface and a second surface opposite the first surface, wherein the second surface is on a backside of the die;a lid comprising an outer surface and an inner surface, wherein the outer surface is on the first surface of the cooling solution, and wherein the lid includes a plurality of fins on the inner surface of the lid; anda solder between the outer surface of the lid and the first surface of the cooling solution, wherein the solder is on an entire length of the first surface of the cooling solution.2. The microelectronic package structure of wherein the cooling solution comprises an integrated heat spreader.3. The microelectronic package structure of wherein a second die is adjacent the first die on the substrate.4. The microelectronic package structure of wherein the lid comprises a heat sink.5. The microelectronic package structure of wherein the lid comprises an inlet and an outlet port on the outer surface claim 1 , and wherein the outer surface of the lid is over the entire length of the first surface of the cooling solution.6. The microelectronic package structure of wherein the lid comprises a direct liquid micro jet lid.7. The microelectronic package structure of wherein the plurality of fins comprises a ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes: a semiconductor element; a submount on which the semiconductor element is mounted, wherein the submount has a first surface on which the semiconductor element is mounted, a second surface located on a side opposite the first surface, and a lateral surface located between the first surface and the second surface, and wherein the submount comprises: a groove located at the second surface, a heat dissipation portion located at the second surface, and an electrode pattern located at the first surface; a package substrate on which the submount is mounted; a first joint member that physically joins the heat dissipation portion to the package substrate; and a connection portion located on the side surface, wherein the connection portion electrically connects the electrode pattern and the package substrate, and the connection portion comprises a second joint member. 1. A semiconductor device comprising:a semiconductor element; a groove located at the second surface,', 'a heat dissipation portion located at the second surface, and', 'an electrode pattern located at the first surface;, 'a submount on which the semiconductor element is mounted, wherein the submount has a first surface on which the semiconductor element is mounted, a second surface located on a side opposite the first surface, and a lateral surface located between the first surface and the second surface, and wherein the submount comprisesa package substrate on which the submount is mounted;a first joint member that physically joins the heat dissipation portion to the package substrate; anda connection portion located on the side surface, wherein the connection portion electrically connects the electrode pattern and the package substrate, and the connection portion comprises a second joint member;wherein the heat dissipation portion and the connection portion are separated by the groove and are electrically insulated from each other.2. The semiconductor device according to claim ...

SEMICONDUCTOR PACKAGE

Disclosed is a semiconductor package including a base film that has a first surface and a second surface opposite to the first surface, a plurality of input/output lines on the first surface of the base film, a semiconductor chip disposed on the first surface of the base film and connected to the input/output lines and including a central portion and end portions on opposite sides of the central portion, and a heat radiation pattern on the second surface of the base film The heat radiation pattern corresponds to the semiconductor chip and has a plurality of openings that correspond to the end portions of the semiconductor chip and that vertically overlap the end portions of the semiconductor chip. 1. A semiconductor package , comprising:a base film having a first surface and a second surface opposite to the first surface;a plurality of input/output lines on the first surface of the base film;a semiconductor chip disposed on the first surface of the base film and connected to the input/output lines, the semiconductor chip including a central portion and end portions on opposite sides of the central portion; anda heat radiation pattern on the second surface of the base film, the heat radiation pattern corresponding to the semiconductor chip and having a plurality of openings that correspond to the end portions of the semiconductor chip and that vertically overlap the end portions of the semiconductor chip.2. The semiconductor package of claim 1 , wherein the semiconductor chip includes a plurality of first chip pads on the central portion and a plurality of second chip pads on the end portions claim 1 ,wherein the second chip pads of the semiconductor chip vertically overlap the openings of the heat radiation pattern.3. The semiconductor package of claim 2 , further comprising a plurality of connection terminals between the input/output lines and the first and second chip pads.4. The semiconductor package of claim 1 , first and second edges opposite to each other; and ...

INTEGRATED CIRCUIT ASSEMBLY AND INTEGRATED CIRCUIT PACKAGING STRUCTURE

An integrated circuit packaging structure includes a chip, an electrical bump, a heat dissipation bump, a lead frame, and a sealant. The chip includes an active surface and an electronic component that is formed by using a semiconductor process. The electrical bump is electrically connected to the electronic component through the active surface. The heat dissipation bump is connected to the active surface. The lead frame is electrically connected to the electrical bump. The sealant covers the chip, the lead frame, and the electrical bump, wherein the heat dissipation bump and a part of the lead frame are exposed without being covered. The height of the heat dissipation bump relative to the active surface is unequal to that of the electrical bump relative to the active surface. 1. An integrated circuit assembly , comprising:a chip, including an active surface and an electronic component that is formed by using a semiconductor process;a heat conductor, formed by using the semiconductor process, and protruding on the active surface;an electrical conductor, formed by using the semiconductor process, and protruding on the active surface;an electrical bump, electrically connected to the active surface via the electrical conductor, so as to be electrically connected to the electronic component through the active surface; anda heat dissipation bump, connected to the active surface via the heat conductor, so as to be connected to the active surface;wherein, through the height difference formed by the heat conductor and the electrical conductor, the height of the heat dissipation bump relative to the active surface is higher than that of the electrical bump relative to the active surface.2. (canceled)3. (canceled)4. (canceled)5. The integrated circuit assembly as claimed in claim 1 , wherein the volume of the heat dissipation bump is greater than that of the electrical bump.6. (canceled)7. The integrated circuit assembly as claimed in claim 1 , wherein materials of the heat ...

CHIP WITH SHELF LIFE

A semiconductor structure including a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is located near a circuit of the IC chip, and a metal layer in a bottom portion of the recess, wherein a portion of the silicon substrate is located below the metal layer in the bottom portion of the recess and above the circuit. 1. A semiconductor structure comprising:a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is located near a circuit of the IC chip; anda metal layer in a bottom portion of the recess, wherein a portion of the silicon substrate is located below the metal layer in the bottom portion of the recess and above the circuit.2. The semiconductor structure of claim 1 , further comprising:a heat sink above the silicon substrate, wherein the heat sink includes a recess that exposes the metal layer.3. The semiconductor structure of claim 1 , wherein the IC chip is present in an oxygen-containing environment.4. The semiconductor structure of claim 3 , wherein the oxygen-containing environment comprises an oxygen-containing fluid such as air.5. The semiconductor structure of claim 3 , wherein the oxygen-containing environment comprises a closed chamber containing pressurized oxygen.6. The semiconductor structure of claim 1 , wherein the metal layer comprises a copper-rich material.7. The semiconductor structure of claim 1 , wherein the portion of the silicon substrate located below the metal layer in the bottom portion of the recess and above the circuit comprises an oxidized portion of the silicon substrate in contact with the IC chip. The present invention generally relates to integrated circuits (IC), and more particularly to fabricating IC chips having a shelf life.New IC technologies may include individual IC chips (i.e., “dies”) arranged into a three dimensional integrated circuit, also known as a three dimensional semiconductor package (3D package). One type of 3D package may include ...

CIRCUIT BOARD AND ELECTRONIC DEVICE

A circuit board includes a metal circuit plate, a metallic heat diffusing plate disposed below the metal circuit plate and having an upper surface and a lower surface, a metallic heat dissipating plate below the heat diffusing plate, an insulating substrate disposed between the metal circuit plate and the heat diffusing plate, and an insulating substrate disposed between the heat diffusing plate and the heat dissipating plate. A grain diameter of metal grains contained in the heat diffusing plate decreases from each of the upper surface and the lower surface of the heat diffusing plate toward a center portion of the heat diffusing plate in a thickness direction. 1. A circuit board comprising:a metal circuit plate;a metallic heat diffusing plate below the metal circuit plate;a metallic heat dissipating plate below the heat diffusing plate;a first insulating substrate disposed between the metal circuit plate and the heat diffusing plate and comprising an upper surface bonded to a lower surface of the metal circuit plate and a lower surface bonded to an upper surface of the heat diffusing plate; anda second insulating substrate disposed between the heat diffusing plate and the heat dissipating plate and comprising an upper surface bonded to a lower surface of the heat diffusing plate and a lower surface bonded to an upper surface of the heat dissipating plate,wherein a grain diameter of metal grains contained in the heat diffusing plate decreases from each of the upper surface and the lower surface of the heat diffusing plate toward a center portion of the heat diffusing plate in a thickness direction.2. A circuit board comprising:a metal circuit plate;a plurality of metallic heat diffusing plates disposed below the metal circuit plate and arranged in an up-down direction;a metallic heat dissipating plate below the plurality of heat diffusing plates;a first insulating substrate disposed between the metal circuit plate and an uppermost heat diffusing plate of the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

The present disclosure is directed to a semiconductor device and a manufacturing method thereof, which relate to the field of semiconductor technologies. The semiconductor device includes a fin ESD element. The method includes: providing a substrate structure, where the substrate structure includes a semiconductor substrate, and a semiconductor fin for the fin ESD element and an electrode structure surrounding a part of the semiconductor fin that are on the semiconductor substrate; forming a second dielectric layer on the substrate structure to cover the electrode structure; forming, in the second dielectric layer, a trench extending to a top of the electrode, where the trench is on the electrode and extends along a longitudinal direction of the electrode, and a transverse width of the trench is less than or equal to a transverse width of the top of the electrode; and filling the trench with a metal material, so as to form a metal heat sink that is on the top of the electrode and is coupled to the electrode. With the present disclosure, an existing structure of an ESD element is improved, so that a metal heat sink can effectively improve a head dissipation effect of a device, thereby improving a performance of the device. 1. A manufacturing method of a semiconductor device , wherein the semiconductor device comprises a fin electro-static discharge (ESD) element , and the method comprises:providing a substrate structure, wherein the substrate structure comprises a semiconductor substrate, and a semiconductor fin for the fin ESD element and an electrode structure surrounding a part of the semiconductor fin that is on the semiconductor substrate, wherein the electrode structure comprises a first dielectric layer surrounding the part of the semiconductor fin and an electrode on the first dielectric layer;forming a second dielectric layer on the substrate structure to cover the electrode structure;forming, in the second dielectric layer, a trench extending to a top of ...

Stacked semiconductor package having heat dissipation structure

A stacked semiconductor package includes a first die, a second die stacked on a surface of the first die, a heat dissipation layer disposed on the surface, a heat insulation layer disposed on the surface to cover the heat dissipation layer and the first die, a heat sink disposed on the second die, and a heat conduction structure spaced apart from the second die in a lateral direction on the surface to connect the heat dissipation layer to the heat sink.

MANUFACTURING METHOD OF HEAT DISSIPATION COMPONENT

The invention provides a manufacturing method of a heat dissipation component. A substrate is provided. The substrate has an outer surface. A patterned dry film is formed on the outer surface. The patterned dry film is composed of a plurality of microporous patterns. A thermally conductive layer is formed on a region excluding the microporous patterns on the outer surface. The patterned dry film is removed to form a plurality of micro meshes. The thermally conductive layer surrounds the micro meshes. 1. A manufacturing method of a heat dissipation component , comprising:providing a substrate having an outer surface;forming a patterned dry film on the outer surface, wherein the patterned dry film is composed of a plurality of microporous patterns;forming a thermally conductive layer on a region excluding the microporous patterns on the outer surface; andremoving the patterned dry film to form a plurality of micro meshes, wherein the thermally conductive layer surrounds the micro meshes.2. The manufacturing method of the heat dissipation component as claimed in claim 1 , wherein forming the patterned dry film comprises:forming a dry film on the outer surface;performing an exposure process on the dry film; andperforming a development process on the dry film.3. The manufacturing method of the heat dissipation component as claimed in claim 1 , wherein a method of forming the thermally conductive layer comprises a plating process.4. The manufacturing method of the heat dissipation component as claimed in claim 1 , wherein the substrate comprises:a core layer;an electrically conductive layer, formed on the core layer, wherein the electrically conductive layer has a first surface and a second surface opposite to the first surface, and the first surface serves as the outer surface.5. The manufacturing method of the heat dissipation component as claimed in claim 4 , wherein a thickness of the electrically conductive layer ranges from 2 μm to 5 μm.6. The manufacturing method ...

SEMICONDUCTOR WAFER HAVING TRENCHES WITH VARIED DIMENSIONS FOR MULTI-CHIP MODULES

A semiconductor wafer includes a first substrate and a first etch stop layer formed on the first substrate. The etch stop layer has an opening. The semiconductor wafer further includes a second substrate and a second etch stop layer formed on the second substrate. The first substrate is bonded on top of the second substrate such that the first etch stop layer is positioned between the first substrate and the second substrate. A trench is formed in the opening. 1. A semiconductor wafer comprising:a first substrate;a first etch stop layer formed on the first substrate, wherein the etch stop layer comprises an opening;a second substrate;a second etch stop layer formed on the second substrate, wherein the first substrate is bonded on top of the second substrate such that the first etch stop layer is positioned between the first substrate and the second substrate; anda trench formed in the opening.2. The semiconductor wafer according to claim 1 , wherein the first substrate comprises silicone.3. The semiconductor wafer according to claim 1 , wherein the second substrate comprises a silicon-on-insulator (SOI) structure.4. The semiconductor wafer according to claim 1 , wherein the first etch stop layer comprises a material selected from the group consisting of an oxide claim 1 , nitride or oxynitride.5. The semiconductor wafer according to claim 1 , wherein the second etch stop layer comprises a material selected from the group consisting of an oxide claim 1 , nitride or oxynitride.6. The semiconductor wafer according to further comprising a planarizing layer.7. The semiconductor wafer according to claim 6 , wherein the planarizing layer comprises an acrylic polymer.8. The semiconductor wafer according to further comprising a bonding layer.9. The semiconductor wafer according to claim 8 , wherein the bonding layer comprises a metal.10. The semiconductor wafer according to further comprising a micro-cooler structure.11. A method of fabricating a semiconductor wafer claim 1 ...

SEMICONDUCTOR DEVICE AND FINFET TRANSISTOR

The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an insulation layer configured for inhibiting a short channel effect and increasing a heat dissipation efficiency of the fin field-effect transistor formed over the semiconductor substrate; at least one fin formed over the insulation layer; a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the semiconductor substrate; and a source formed in the fin at one side of the gate structure and a drain formed in the fin at the other side of the gate structure. 114-. (canceled)15. A semiconductor device , comprising:a semiconductor substrate;a plurality of fins over the semiconductor substrate; andan insulation layer, including a first insulation layer and a second insulation layer,wherein the first insulation layer has a first portion under a lower portion of each fin and a second portion in the substrate between adjacent fins, andthe second insulation layer is on the first insulation layer between adjacent fins.16. The semiconductor device according to claim 15 , wherein:the insulation layer is made of nitrogen-doped silicon oxide.17. The semiconductor device according to claim 15 , wherein:a thickness of the insulation layer is in a range of approximately 2 Å-200 Å.18. A fin field-effect transistor claim 15 , comprising:a semiconductor substrate;a plurality of fins over the semiconductor substrate;an insulation layer, including a first insulation layer and a second insulation layer,wherein the first insulation layer has a first portion under a lower portion of each fin and a second portion in the substrate between adjacent fins, andthe second insulation layer is on the first insulation layer between adjacent fins;a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the ...

INTEGRATED FAN-OUT PACKAGES AND METHODS OF FORMING THE SAME

A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material. 1. A method of forming a semiconductor device , the method comprising:forming a conductive pillar over a first side of a carrier;attaching a backside of a die to the first side of the carrier;forming a molding material over the first side of the carrier around the die and around the conductive pillar;forming a redistribution structure over the die, the conductive pillar, and the molding material;removing the carrier, wherein after removing the carrier, a first end of the conductive pillar distal to the redistribution structure is exposed;forming a heat sink on the backside of the die; andbonding a semiconductor package to the first end of the conductive pillar, the heat sink being between the semiconductor package and the die.2. The method of claim 1 , wherein forming the heat sink comprises depositing a thermally conductive material on the backside of the die.3. The method of claim 2 , wherein the thermally conductive material has a thermal conductivity between about 100 watts per meter-kelvin (W/(m-k)) and about 400 W/(m-k).4. The method of claim 3 , wherein the thermally conductive material has a heat capacity of about 1700 joules per gram per degree Celsius (J/(g ° C.)) or larger.5. The method of claim 2 , wherein the backside of the die is attached to the first side of the carrier by an adhesive layer claim 2 , wherein forming the heat sink comprises:after removing the carrier, removing the adhesive layer to form a recess in the molding material, the recess exposing the backside of the die; andforming the thermally ...

MICROELECTRONIC ASSEMBLIES INCLUDING A THERMAL INTERFACE MATERIAL

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate; a cooling apparatus thermally coupled to the second surface of the die; and a thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes an indium alloy having a liquidus temperature equal to or greater than about 245 degrees Celsius. 1. A microelectronic assembly , comprising:a package substrate having a first surface and an opposing second surface;a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate;a cooling apparatus thermally coupled to the second surface of the die; anda thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes indium, and one or more of: nickel, gold, titanium, copper, and aluminum.2. The microelectronic assembly of claim 1 , wherein the TIM includes nickel having a weight percent between 0.5 and 18.3. The microelectronic assembly of claim 1 , wherein the TIM includes gold having a weight percent between 0.5 and 45.4. The microelectronic assembly of claim 1 , wherein the TIM includes titanium having a weight percent between 0.5 and 24.5. The microelectronic assembly of claim 1 , wherein the TIM includes copper having a weight percent between 3 and 30.6. The microelectronic assembly of claim 1 , wherein the TIM includes aluminum having a weight percent between 0.5 and 30.7. The microelectronic assembly of claim 1 , wherein the TIM includes indium claim 1 , nickel claim 1 , and gold.8. The microelectronic assembly of claim 1 , wherein ...

SEMICONDUCTOR DEVICE WITH INTEGRATED HEAT DISTRIBUTION AND MANUFACTURING METHOD THEREOF

A semiconductor package having an internal heat distribution layer and methods of forming the semiconductor package are provided. The semiconductor package can include a first semiconductor device, a second semiconductor device, and an external heat distribution layer. The first semiconductor device can comprise a first semiconductor die and an external surface comprising a top surface, a bottom surface, and a side surface joining the bottom surface to the tope surface. The second semiconductor device can comprise a second semiconductor die and can be stacked on the top surface of the first semiconductor device. The external heat distribution layer can cover an external surface of the second semiconductor device and the side surface of the first semiconductor device. The external heat distribution layer further contacts an internal heat distribution layer on a top surface of the first semiconductor die. 1. A semiconductor package , comprising: a first semiconductor die;', 'an external surface comprising a top surface, a bottom surface, and a side surface joining the bottom surface to the tope surface; and', 'an internal heat distribution layer on a top surface of the first semiconductor die, the internal heat distribution layer extending to the side surface of the first semiconductor device;, 'a first semiconductor device comprisinga second semiconductor device comprising a second semiconductor die stacked on the top surface of the first semiconductor device; and covering an external surface of the second semiconductor device and the side surface of the first semiconductor device; and', 'contacting the internal heat distribution layer along the side surface of the first semiconductor device., 'an external heat distribution layer2. The semiconductor package of claim 1 , further comprising a plurality of fins projecting from the external heat distribution layer.3. The semiconductor package of claim 2 , wherein the internal heat distribution layer claim 2 , the ...

MICROELECTRONIC PACKAGE CONSTRUCTION ENABLED THROUGH CERAMIC INSULATOR STRENGTHENING AND DESIGN

A semiconductor packaging structure is disclosed. The semiconductor packaging structure includes a heat spreader, a set of at least two leads, and a ceramic insulator. The heat spreader has a thermal conductivity greater than 300 W/m*K. The ceramic insulator has a mean flexural strength that is greater than 500 MPa and so better able to withstand the thermal expansion mismatch between it and the heat spreader. The heat spreader, the set of at least two leads, and the ceramic insulator may also be part of a semiconductor package along with at least one semiconductor device, a wire bond, and a ceramic lid. 1. A microelectronic package comprising:a heat spreader, wherein the heat spreader has a thermal conductivity above 300 W/m*K;a ceramic insulator attached to the heat spreader, wherein the ceramic insulator has a mean flexural strength above 500 MPa; anda set of at least two leads, wherein the set of leads is attached to the ceramic insulator.2. The microelectronic package of claim 1 , wherein the ceramic insulator comprises a cut-out section having an inside corner claim 1 , the inside corner having a radius of less than 18 mils.3. The microelectronic package of claim 1 , wherein the ceramic insulator comprises a cut-out section having an inside corner claim 1 , the inside corner having a radius between 20 and 50 mils.4. The microelectronic package of claim 2 , the microelectronic package further comprising:at least one semiconductor device, the at least one semiconductor device attached on top of the heat spreader and within the cut-out section of the ceramic insulator.5. The microelectronic package of claim 2 , further comprising a first braze that attaches the ceramic insulator to the heat spreader.6. The microelectronic package of claim 5 , further comprising:a metallization pattern on top of the ceramic insulator.7. The microelectronic package of claim 6 , wherein the metallization pattern comprises tungsten.8. The microelectronic package of claim 6 , further ...

COOLING SOLUTION DESIGNS FOR MICROELECTRONIC PACKAGES

Methods of forming microelectronic package structures/modules, and structures formed thereby, are described. Structures formed herein may include a first die disposed on a substrate and a second die disposed adjacent the first die on the substrate. A cooling solution is attached to the substrate, wherein a rib extends from a central region of the cooling solution and is attached to the substrate. The rib is disposed between the first die and the second die. 1. A microelectronic package structure comprising:a first die on a substrate;a second die adjacent the first die on the substrate; a planar portion at least partially over the first die and the second die;', 'a peripheral portion of the cooling solution extending from the planar portion and attached to a peripheral portion of the substrate; and', 'a rib extending from the planar portion and attached to a central portion of the substrate, wherein the rib is directly on a portion of a sidewall of at least one of the first die or the second die., 'a cooling solution comprising2. The microelectronic package structure of wherein the cooling solution comprises an integrated heat spreader.3. The microelectronic package structure of wherein a first thermal interface material (TIM) is on a backside of the first die claim 1 , wherein the backside of the first die is opposite an active side of the first die claim 1 , and a second TIM is on a backside of the second die claim 1 , wherein the backside of the second die is opposite an active side of the second die claim 1 , and wherein the rib is between the first TIM and the second TIM claim 1 , wherein a thickness of the first TIM is different than a thickness of the second TIM claim 1 , and wherein the rib is directly on the first TIM and is directly on the second TIM.4. The microelectronic package structure of wherein a sealant is between the rib and the substrate.5. The microelectronic package structure of wherein the rib is continuous between opposite sides of the ...

Semiconductor chip and stacked type semiconductor package having the same

The disclosure relates to a semiconductor chip and a stacked type semiconductor package having the same. The semiconductor chip includes: a semiconductor chip body having a first surface formed with a plurality of bonding pads and a second surface which is opposite to the first surface, a plurality of first and second through electrodes that pass through the semiconductor chip body and one ends thereof are electrically connected to the bonding pads, an insulating layer formed over the second surface of the semiconductor chip body such that the other ends of the first and second through electrodes are not covered by the insulating layer, and a first heat spreading layer formed over the insulating layer.

ACTIVE HEATSINK LID

An active device lid for a device base. The device lid includes a heatsink proximate to a circuit assembly and configured to remove heat generated by the device base, the circuit assembly configured to generate an operating signal voltage for the device base, and a connector configured to connect the circuit assembly to the device base, where the device base is configured to connect to a device mounting substrate on a substrate side of the device base, and where the circuit assembly is configured to be at least partially located on an opposing side of the device base, the opposing side opposing the substrate side. 1. A device lid for a device base , the device lid comprising:a heatsink proximate to a circuit assembly and configured to remove heat generated by the device base;the circuit assembly configured to generate an operating signal voltage for the device base; anda connector configured to connect the circuit assembly to the device base,wherein the device base is configured to connect to a device mounting substrate on a substrate side of the device base, andwherein the circuit assembly is configured to be at least partially located on an opposing side of the device base, the opposing side opposing the substrate side.2. The device lid of claim 1 ,wherein the heatsink comprises a first portion for collecting the heat from the device base and a second portion for releasing the heat into an ambient space,wherein the circuit assembly is interposed between the first portion and the second portion of the heatsink.3. The device lid of claim 2 ,wherein the heatsink penetrates an opening in the circuit assembly to connect to the device base.4. The device lid of claim 3 , further comprising:an input connector configured to receive a system signal voltage, wherein the system signal voltage is used by the circuit assembly to generate the operating signal voltage; andan output connector configured to provide the operating signal voltage to the device base,wherein the input ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER CONVERSION DEVICE

A semiconductor device includes a heat sink, an insulating layer, a lead frame, a power semiconductor element, a sealing resin, and fins. The heat sink has a first main surface and a second main surface opposed to each other. A lead frame including a lead terminal is disposed on the first main surface of the heat sink with the insulating layer interposed. The power semiconductor element is mounted on the lead frame. The sealing resin is formed to cover an inside region located inside of an outer peripheral region located around the entire periphery along the outer periphery of the first main surface of the heat sink. A first depression is formed along the sealing resin in the outer peripheral region of the first main surface. 1. A semiconductor device comprising:a heat sink having a first main surface and a second main surface opposed to each other, the heat sink being formed of copper or aluminum;a circuit pattern disposed at the first main surface of the heat sink with an insulating layer interposed;a conductor part electrically connected to the circuit pattern;a semiconductor element mounted on the circuit pattern and electrically connected to the circuit pattern; anda sealing member formed on the first main surface of the heat sink to seal the semiconductor element and the circuit pattern, whereinthe conductor part is exposed from a surface located on an opposite side to a side on which the heat sink is located in the sealing member,the sealing member is formed to cover an inside region located inside of an outer peripheral region located around an entire periphery along an outer periphery of the first main surface of the heat sink, andthe outer peripheral region in the first main surface of the heat sink has a first depression located outside the sealing member and adjacent to a perimeter of the sealing member.2. The semiconductor device according to claim 1 , whereinthe circuit pattern includes a lead frame, andthe conductor part includes a lead terminal ...

PINS FOR HEAT EXCHANGERS

A heat exchanger includes a body defining a flow channel, and a pin extending across the flow channel, the pin including an at least partially non-cylindrical shape. The pin can be a double helix pin including two spiral branches defining a double helix shape. The two branches can include a uniform winding radius. The two branches include a non-uniform winding radius. 1. A heat exchanger , comprising:a body defining a flow channel; anda pin extending across the flow channel, the pin including an at least partially non-cylindrical shape, wherein the pin includes a plurality of branches extending away from a trunk portion of the pin.2. The heat exchanger of claim 1 , wherein at least one of the plurality of branches curves back to the trunk portion of the pin.3. The heat exchanger of claim 1 , wherein the trunk portion and/or one or more of the branches includes a hole defined therethrough.4. The heat exchanger of claim 1 , wherein the branches connect to an electronics side of the body.5. The heat exchanger of claim 1 , wherein the pin includes a plurality of multi-branches connected to each other.6. The heat exchanger of claim 1 , further comprising a plurality of pins.7. The heat exchanger of claim 6 , wherein the plurality of pins includes pins of different shape.8. The heat exchanger of claim 6 , wherein the plurality of pins includes pins of only one shape.9. The heat exchanger of claim 6 , wherein the plurality of pins are defined in the channel in a predetermined pattern relative to each other. This application is a divisional application of U.S. application Ser. No. 16/0474,411, filed Jul. 27, 2018, which is a division of 14/579,120 filed on Dec. 22, 2014 the entire contents of which are incorporated herein by reference.The present disclosure relates to heat exchangers, more specifically to heat exchangers with pins disposed in flow channels thereof.Traditional heat exchangers can be cast or pieced together to form at least one channel defined therein for ...

SEMICONDUCTOR DEVICE

A semiconductor device () includes a semiconductor module () and a fan device (). The semiconductor module () includes a module board (), a first element () mounted on the module board (), and a second element () having a smaller heat generation amount and lower heat resistance. In a flowing direction of an air flow (F) formed by driving the fan device (), the fan device () is disposed downstream of the first element () and the second element (), and the first element () is disposed downstream of the second element (). 1. A semiconductor device comprising: a semiconductor module; and a fan device , wherein:the semiconductor module includes a module board, and a first element and a second element mounted on one element mounting surface of the module board;the second element is an element having a smaller heat generation amount and lower heat resistance than the first element; andin a flowing direction of an air flow formed by driving the fan device, the fan device is disposed downstream of the first element and the second element, and the first element is disposed downstream of the second element.2. The semiconductor device according to claim 1 , wherein:the semiconductor module further includes a third element having a smaller heat generation amount and lower heat resistance than the first element, the third element being mounted on the element mounting surface;the third element and the first element are arranged side by side in a direction orthogonal to the flowing direction of the air flow; andan arrangement clearance between the first element and the second element is set to be narrower than an arrangement clearance between the first element and the third element.3. The semiconductor device according to claim 1 , further comprising a heat sink that is disposed so as to be in contact with the first element.4. The semiconductor device according to claim 1 , wherein the semiconductor module is a multi-chip module including claim 1 , on the module board claim 1 , a ...

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR MANUFACTURING THE SAME

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate. 1. A semiconductor device structure , comprising:a substrate having an upper surface;a die disposed on the upper surface of the substrate; anda stiffener disposed on the upper surface of the substrate and surrounds the die, wherein the stiffener comprises a first portion, a second portion on the first portion and a third portion extending from a lateral surface of the first portion toward the die, and the third portion has a lateral surface substantially perpendicular to the lateral surface of the first portion.2. The semiconductor device structure of claim 1 , wherein the stiffener has a first upper surface adjacent to the die claim 1 , a second upper surface farther from the die than the first upper surface claim 1 , and a lateral surface extending from the first upper surface to the second upper surface claim 1 , and an angle constituted by the first upper surface and the lateral surface of the stiffener ranges from about 90° to about 115°.3. The semiconductor device structure of claim 1 , wherein the stiffener has a first upper surface adjacent to the die claim 1 , a second upper surface farther from the die than the first upper surface claim 1 , and a lateral surface extending from the first upper surface to the ...

STACKED SEMICONDUCTOR DIE ASSEMBLIES WITH SUBSTRATE HEAT SINKS AND ASSOCIATED SYSTEMS AND METHODS

Stacked semiconductor die assemblies with heat sinks and associated methods and systems are disclosed. In some embodiments, a controller carrying one or more memory dies may be attached to a front side of a substrate. The substrate may include a heat sink formed on its back side such that the heat sink can establish a thermal contact with the controller. Further, the heat sink may be coupled to a thermally conductive pad of a printed circuit board (PCB) that carries the substrate. In this manner, the controller may be provided with a heat path toward the PCB to dissipate thermal energy generated during operation. In some cases, the substrate may include a set of thermal vias extending from the heat sink toward the controller to enhance the thermal contact between the controller and the heat sink. 1. A semiconductor die assembly , comprising:a substrate including a first side and a second side opposite to the first side;one or more memory dies disposed over the first side of the substrate;a controller die attached to the first side of the substrate and operatively coupled with the one or more memory dies;interconnects at the second side of the substrate, operatively coupled with the controller die and the one or more memory dies; anda heat sink at the second side of the substrate, the heat sink covering an area of the second side at least twice an area of any of the interconnects.2. The semiconductor die assembly of claim 1 , wherein the heat sink includes copper formed by a three-dimensional (3D) printing process claim 1 , an electroplating process claim 1 , or both.3. The semiconductor die assembly of claim 1 , wherein the heat sink is located on top of a surface of the second side of the substrate.4. The semiconductor die assembly of claim 1 , wherein the heat sink is partially embedded within a surface of the second side of the substrate.5. The semiconductor die assembly of claim 1 , wherein the heat sink is recessed below a surface of the second side of the ...

THERMALLY CONDUCTIVE SHEET AND SEMICONDUCTOR DEVICE

A thermally conductive sheet of the present invention includes a thermosetting resin (A) and an inorganic filler material (B) that is dispersed in the thermosetting resin (A). In the thermally conductive sheet of the present invention, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10. 1. A thermally conductive sheet that includes a thermosetting resin and an inorganic filler material which is dispersed in the thermosetting resin ,wherein, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10.2. The thermally conductive sheet according to claim 1 ,wherein the maximum value of the dielectric loss factor is less than or equal to 0.025, and the change in the relative dielectric constant is less than or equal to 0.05.4. The thermally conductive sheet according to claim 1 ,wherein the thermosetting resin is one or two or more selected from an epoxy resin having a dicyclopentadiene skeleton, an epoxy resin having a biphenyl skeleton, an epoxy resin having an adamantane skeleton, an epoxy resin having a phenol aralkyl skeleton, an epoxy resin having a biphenyl aralkyl skeleton, an epoxy resin having a naphthalene aralkyl skeleton, and a cyanate resin.5. The thermally conductive sheet according to claim 1 ,wherein a glass transition temperature of the cured product of the thermally conductive sheet is greater than or equal to 175° C., which is measured through dynamic viscoelasticity measurement under conditions of a rate of ...

Device with pillar-shaped components

A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to the substrate and/or the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part and connected to the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, and to be in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

THERMALLY ENHANCED PACKAGE-ON-PACKAGE STRUCTURE

In some embodiments, a semiconductor device package may include a semiconductor device package on package assembly. The package on package assembly may include a first package, a second package, and a shield. The first package may include a first surface, a second surface substantially opposite the first surface, a first die, and a first set of electrical conductors coupled to the first surface and configured to electrically connect the package on package assembly. The second package may include a third surface and a fourth surface substantially opposite the third surface, and a second die. The third surface may be coupled to the second surface. The first package may be electrically coupled to the second package. The shield may be applied to the fourth surface of the semiconductor device package assembly. In some embodiments, the shield may transfer, during use, heat from the first die. 1. A semiconductor device package on package assembly , comprising:a first package comprising a first surface, a second surface substantially opposite the first surface, a first die, and a first set of electrical conductors coupled to the first surface and configured to electrically connect the package on package assembly;a second package comprising a third surface and a fourth surface substantially opposite the third surface, and a second die, wherein the third surface is coupled to the second surface, and wherein the first package is electrically coupled to the second package;at least one exposed thermal conductor positioned in the second package adjacent the third surface such that the at least one exposed thermal conductor exposes through a perimeter surface of the second package;a plurality of wires positioned in the second package thermally coupling the first die to the at least one exposed thermal conductor; anda shield applied to the fourth surface of the semiconductor device package assembly, wherein the shield is thermally coupled to the at least one exposed thermal ...

Semiconductor Devices and Methods of Formation Thereof

In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal strip is not coupled to an external potential node. 1. A method of forming a semiconductor device , the method comprising:forming a trench in an intermediate region between a first contact region and a second contact region;forming a first contact metal layer over the first contact region and the second contact region, the first contact metal layer at least partially formed within the trench;forming a second contact metal layer over the first contact metal layer; andremoving the first contact metal layer from the intermediate region without removing all of the first contact metal layer from within the trench.2. The method of claim 1 , wherein removing the first contact metal layer comprises:exposing the first contact metal layer to an etching process; andstopping the etching process before all of the first contact metal layer from within the trench is removed.3. The method of claim 2 , wherein stopping the etching process comprises using an end-point detector.4. The method of claim 2 , wherein the thickness of the lower metal layer is at least half the width of the trench.5. The method of claim 1 , wherein the width of the trench is less than a minimum feature for contact formation for the process technology used to fabricate the semiconductor device.6. A method of forming a semiconductor device claim 1 , the method comprising:forming a first conductive line over a workpiece;forming a second conductive line over the first conductive line;forming a contact opening from a top surface of the second conductive line, the contact opening extending from the second conductive line to the first conductive line; andforming a contact ...

Dense Assembly of Laterally Soldered, Overmolded Chip Packages

Embodiments of the invention are directed to an integrated circuit (IC) package assembly, including: one or more printed circuit boards (PCBs); and a set of chip packages, each including: an overmold; and an IC chip, overmolded in the overmold, and wherein: the chip packages are stacked transversely to an average plane of each of the chip packages, thereby forming a stack wherein a main surface of one of the chip packages faces a main surface of another one of the chip packages; and each of the chip packages is laterally soldered to one or more of said one or more PCBs and arranged transversally to each of said one or more PCBs, whereby an average plane of each of said one or more PCBs extends transversely to the average plane of each of the chip packages of the stack. Further embodiments are directed to related devices and fabrication methods. 3. The IC package assembly according to claim 2 , whereineach of the chip packages comprises lateral electrical conductors that comprise conductors formed on one of the lateral surfaces of said each of the chip packages.4. The IC package assembly according to claim 1 , whereinsaid conductors formed on one of the lateral surfaces are laterally formed as bus lines.5. The IC package assembly according to claim 2 , whereinthe lateral electrical conductors of one or more of the chip packages comprise, each, exposed through mold vias extending transversely to an average plane of their respective chip package.6. The IC package assembly according to claim 5 , whereinan IC chip of a first chip package of the stack is electrically connected to an IC chip of a second chip package of the stack, thanks to one or more additional through mold vias, the latter extending through the overmold of said first chip package.7. The IC package assembly according to claim 2 , whereineach of the chip packages further comprises wires electrically connecting the lateral electrical conductors to an IC chip of said each of the chip packages.8. The IC ...