Saw devices including resistive films
Номер патента: CA1252557A
Опубликовано: 11-04-1989
Автор(ы): Blair K. Maclaurin, Grantley O. Este, Mark S. Suthers, Richard W. Streater
Принадлежит: Northern Telecom Ltd
Опубликовано: 11-04-1989
Автор(ы): Blair K. Maclaurin, Grantley O. Este, Mark S. Suthers, Richard W. Streater
Принадлежит: Northern Telecom Ltd
Реферат: SAW DEVICES INCLUDING RESISTIVE FILMS Abstract of the Disclosure Each IDT (inter-digital transducer) of a SAW (surface acoustic wave) device is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electro-acoustic absorbers between the IDTs and edges of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.
Surface acoustic wave (saw) devices with a diamond bridge enclosed wave propagation cavity
Номер патента: WO2022159255A1. Автор: Je-Hsiung Lan,Jonghae Kim,Ranadeep Dutta. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-07-28.