A method for forming a virtual-ground flash eprom array with floating gates that are self aligned to the field oxide regions of the array
Номер патента: EP0698287A1
Опубликовано: 28-02-1996
Автор(ы): Albert Bergemont
Принадлежит: National Semiconductor Corp
Опубликовано: 28-02-1996
Автор(ы): Albert Bergemont
Принадлежит: National Semiconductor Corp
Реферат: The floating gate of a virtual-ground flash electrically programmable read-only-memory (EPROM) cell, which is formed over a portion of a pair of vertically-adjacent field oxide regions, is self aligned to the field oxide regions by utilizing a stacked etch process to define the widths of both the floating gate and the field oxide regions. As a result, the pitch of the cells in the X direction can be substantially reduced.
A method for forming a virtual-ground flash eprom array with floating gates that are self aligned to the field oxide regions of the array
Номер патента: WO1995025345A1. Автор: Albert Bergemont. Владелец: National Semiconductor Corporation. Дата публикации: 1995-09-21.