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3D Integrated Circuit and Methods of Forming the Same

Номер патента: US20210151353A1
Опубликовано: 20-05-2021
Автор(ы): Cheng-Tai Hsiao, Chia-Shiung Tsai, Hsun-Chung KUANG, Lan-Lin Chao, Ping-Yin Liu, Xiaomeng Chen, Yen-Chang Chu, Yeur-Luen Tu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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