Microelectronic devices with lower recessed conductive structures and related methods .

Microelectronic devices with lower recessed conductive structures and related methods

Номер патента: US20220392917A1
Опубликовано: 08-12-2022
Автор(ы): Anilkumar Chandolu, Indra V. Chary
Принадлежит: Micron Technology Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Microelectronic devices with lower recessed conductive structures and related methods and systems

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Microelectronic devices with lower recessed conductive structures and related methods

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Microelectronic devices with lower recessed conductive structures and related methods

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