Structure and formation method of semiconductor device structure with through semiconductor via.

Structure and formation method of semiconductor device structure with through semiconductor via

Номер патента: US20240379361A1
Опубликовано: 14-11-2024
Автор(ы): Chih-Chuan SU, Dian-Hau Chen, Liang-Wei WANG, Tsung-Chieh Hsiao
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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