Semiconductor device having dual damascene line structure and method for fabricating the same.

Semiconductor device having dual damascene line structure and method for fabricating the same

Номер патента: US20020030280A1
Опубликовано: 14-03-2002
Автор(ы): Kyung-Tae Lee, Seong-ho Liu
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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