Memory device and read operation method thereof.

Memory device and read operation method thereof

Номер патента: US20150023120A1
Опубликовано: 22-01-2015
Автор(ы): Chia-Jung Chen, Chin-Hung Chang, Ken-Hui Chen, Kuen-Long Chang, Su-Chueh Lo
Принадлежит: Macronix International Co Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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