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Strained source and drain (ssd) structure and method for forming the same

Номер патента: US20150380521A1
Опубликовано: 31-12-2015
Автор(ы): Che-Cheng Chang, Tung-Wen CHENG, Yi-Jen Chen, Yung-Jung Chang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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