Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices
Номер патента: EP4205182A1
Опубликовано: 05-07-2023
Автор(ы): Joohyung Kim, Kijeong Han, Sei-Hyung Ryu
Принадлежит: Wolfspeed Inc
Опубликовано: 05-07-2023
Автор(ы): Joohyung Kim, Kijeong Han, Sei-Hyung Ryu
Принадлежит: Wolfspeed Inc
Реферат: A power semiconductor device has a semiconductor layer structure that includes a silicon carbide drift region having a first conductivity type, first and second wells in the silicon carbide drift region that are doped with dopants having a second conductivity type, and a JFET region between the first and second wells. The first and second wells each include a main well and a side well that is between the main well and the JFET region, and each side well includes a respective channel region. A doping concentration of the JFET region exceeds a doping concentration of the silicon carbide drift region, and a minimum width of an upper portion of the JFET region is greater than a minimum width of a lower portion of the JFET region.
Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices
Номер патента: US11843061B2. Автор: Kijeong Han,Sei-Hyung Ryu,Joohyung Kim. Владелец: Wolfspeed Inc. Дата публикации: 2023-12-12.