BONDED SEMICONDUCTOR STRUCTURES HAVING BONDING CONTACTS MADE OF INDIFFUSIBLE CONDUCTIVE MATERIALS AND METHODS FOR FORMING THE SAME.

BONDED SEMICONDUCTOR STRUCTURES HAVING BONDING CONTACTS MADE OF INDIFFUSIBLE CONDUCTIVE MATERIALS AND METHODS FOR FORMING THE SAME

Номер патента: US20200381384A1
Опубликовано: 03-12-2020
Автор(ы): CHEN Jun, Hua Zi Qun, Huo Zongliang, Liu Jun, Xiao Li Hong, Zhu Jifeng
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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