Semiconductor die with a vertical power transistor device
Номер патента: EP4341990A1
Опубликовано: 27-03-2024
Автор(ы): Andreas Peter Meiser, Thomas Feil, Till Schloesser, Timothy Henson
Принадлежит: INFINEON TECHNOLOGIES AUSTRIA AG
Опубликовано: 27-03-2024
Автор(ы): Andreas Peter Meiser, Thomas Feil, Till Schloesser, Timothy Henson
Принадлежит: INFINEON TECHNOLOGIES AUSTRIA AG
Реферат: The disclosure relates to a semiconductor die (1), comprising a vertical power transistor device (2), the vertical power transistor device having a source region (3) and a drain region (4) at opposite sides of a semiconductor body (10), and a lateral transistor device (20), the lateral transistor device having a body region (221) with a lateral channel region (221.1), as well as a source and a drain region formed at a frontside of the semiconductor body, wherein a deep trench (305) is arranged laterally between the vertical power transistor device (2) and the lateral transistor device (20), forming a deep trench isolation (306).
Semiconductor Die with a Vertical Power Transistor Device
Номер патента: US20240243130A1. Автор: Till Schlosser,Timothy Henson,Andreas Peter Meiser,Thomas Martin Feil. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-07-18.