Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20210327779A1
Опубликовано: 21-10-2021
Автор(ы): Shotaro SAKUMOTO
Принадлежит: Mitsubishi Electric Corp
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Semiconductor device, wiring board for mounting semiconductor and method of production of semiconductor device

Номер патента: KR100290993B1. Автор: 아끼라 나가이,도시아끼 다나까,마사아끼 야스다,아이조우 가네다,후미오 이노우에,가즈노리 야마모또,오사무 와따나베,가즈요시 고지마,요시아끼 쯔보마쯔,도시오 야마자끼,이쯔오 와따나베,겐조 다께무라,도모히사 오따,히로히또 오아따,나오유끼 시오자와. Владелец: 이사오 우치가사키. Дата публикации: 2001-08-07.

SEMICONDUCTOR DEVICE HAVING PACKAGE ON PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер патента: US20220181309A1. Автор: Shim JongBo,LEE Jeonghyun,Kim Jihwang. Владелец: . Дата публикации: 2022-06-09.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US9484280B2. Автор: Tiam Meng PON,Theng Chao Long,Tian San Tan. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Semiconductor device having package on package structure and method of manufacturing the semiconductor device

Номер патента: US20240014191A1. Автор: Jeonghyun LEE,JongBo Shim,Jihwang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-11.

Semiconductor device having package on package structure and method of manufacturing the semiconductor device

Номер патента: US11804477B2. Автор: Jeonghyun LEE,JongBo Shim,Jihwang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Semiconductor device having package on package structure and method of manufacturing the semiconductor device

Номер патента: US20220181309A1. Автор: Jeonghyun LEE,JongBo Shim,Jihwang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-09.

Semiconductor device and lead frame assembly/lead frame for making a semiconductor device

Номер патента: US20020047194A1. Автор: Yuichi Douki,Hideshi Hanada,Jun Sugimoto. Владелец: Individual. Дата публикации: 2002-04-25.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220262711A1. Автор: On Lok Chau,Fei WONG,Billie BI,Ivan Shiu,William Hor. Владелец: Nexperia BV. Дата публикации: 2022-08-18.

Method of manufacturing a semiconductor device

Номер патента: US7534657B2. Автор: Yoshihiko Yamaguchi,Yusuke Ohta,Atsushi Fujishima. Владелец: Renesas Technology Corp. Дата публикации: 2009-05-19.

Semiconductor device with a gap control electrode and method of manufacturing the semiconductor device

Номер патента: US10867950B2. Автор: Makoto Murai,Yuji Takaoka. Владелец: Sony Corp. Дата публикации: 2020-12-15.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20200343174A1. Автор: Junichi Murakami,Kota Nakamura,Hiromi Tominaga,Hidenori Shigeoka. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-10-29.

Method of fabricating a semiconductor device

Номер патента: US20010016371A1. Автор: Atsushi Nakamura,Kunihiro Tsubosaki,Masachika Masuda,Akihiko Iwaya,Chikako Imura,Toshihiro Shiotsuki. Владелец: Individual. Дата публикации: 2001-08-23.

Method of manufacturing a semiconductor device

Номер патента: US10896869B2. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-01-19.

Thin semiconductor device and method of manufacturing thin semiconductor device

Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

Lead frame, semiconductor device, and method of manufacturing the semiconductor device

Номер патента: US20080224280A1. Автор: Naoto Kimura. Владелец: NEC Electronics Corp. Дата публикации: 2008-09-18.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220262712A1. Автор: Ricardo Yandoc,Dilder Chowdhury,Ilyas Dchar. Владелец: Nexperia BV. Дата публикации: 2022-08-18.

Method of manufacturing a semiconductor device

Номер патента: US20110183473A1. Автор: Naoto Kimura. Владелец: Renesas Electronics Corp. Дата публикации: 2011-07-28.

Packaged semiconductor devices with laser grooved wettable flank and methods of manufacture

Номер патента: US20180269138A1. Автор: Erwin Victor Cruz,Aira Lourdes VILLAMOR,Geraldine Suico,Silnore Sabando. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2018-09-20.

Packaged semiconductor devices with laser grooved wettable flank and methods of manufacture

Номер патента: US10483192B2. Автор: Erwin Victor Cruz,Aira Lourdes VILLAMOR,Geraldine Suico,Silnore Sabando. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2019-11-19.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190279921A1. Автор: Kiyoaki Kadoi. Владелец: Ablic Inc. Дата публикации: 2019-09-12.

Resin-sealed semiconductor device, circuit member for use therein and method of manufacturing resin-sealed semiconductor device

Номер патента: US6025640A. Автор: Hiroshi Yagi,Masato Sasaki,Kazuyoshi Togashi. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2000-02-15.

Semiconductor device having a redistribution bonding interconnection, a method of manufacturing the semiconductor device, and a chip stack package including the semiconductor device

Номер патента: US20230230960A1. Автор: Jun Yong Song,Kang Hun KIM,Si Yun KIM. Владелец: SK hynix Inc. Дата публикации: 2023-07-20.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20090289361A1. Автор: Seiya Fujii. Владелец: Elpida Memory Inc. Дата публикации: 2009-11-26.

Semiconductor device having a shielding layer and a method of fabricating the semiconductor device

Номер патента: US20240194745A1. Автор: Ling Ma,Robert Haase,Timothy Henson. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-06-13.

Semiconductor device with contacts and metal interconnects and method of manufacturing the semiconductor device

Номер патента: US20150371945A1. Автор: Naoya Inoue,Yoshihiro Hayashi,Kenichiro Hijioka. Владелец: Renesas Electronics Corp. Дата публикации: 2015-12-24.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: RU2678509C1. Автор: Акинори САКАКИБАРА. Владелец: Тойота Дзидося Кабусики Кайся. Дата публикации: 2019-01-29.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20180190585A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: International Business Machines Corp. Дата публикации: 2018-07-05.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20180366408A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Benjamin David Briggs,Bartlef H. DEPROSPO. Владелец: International Business Machines Corp. Дата публикации: 2018-12-20.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US11574864B2. Автор: Benjamin D. Briggs,Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo. Владелец: Tessera LLC. Дата публикации: 2023-02-07.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20230361023A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: Adeia Semiconductor Solutions LLC. Дата публикации: 2023-11-09.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20180005941A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: International Business Machines Corp. Дата публикации: 2018-01-04.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20200388568A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: Tessera LLC. Дата публикации: 2020-12-10.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US11955424B2. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: Adeia Semiconductor Solutions LLC. Дата публикации: 2024-04-09.

Semiconductor device including metal surrounding via contact and method of forming the semiconductor device

Номер патента: US20230402366A1. Автор: Sung-Li Wang,Po-Chin Chang,Pinyen Lin,Shuen-Shin Liang,Chia-Hung Chu,Ken-Yu Chang,Hong-Mao Lee,Wei-Yip Loh,Hung-Yi Huang,Hsu-Kai Chang,Chun-I Tsai,Kuan-Kan HU,Chuan-Hui SHEN,Harry CHIEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Method of manufacturing a semiconductor device and a support plate, and a semiconductor device obtained by means of said method

Номер патента: WO2002017391A3. Автор: Johannes G P Mastboom,Karianne H Lindenhovius,Adrianus J M Vugts. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2003-10-09.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200185343A1. Автор: Shinjiro Kato,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2020-06-11.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180269171A1. Автор: Shinjiro Kato,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2018-09-20.

Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device

Номер патента: US9824994B2. Автор: Takuya Kadoguchi. Владелец: Toyota Motor Corp. Дата публикации: 2017-11-21.

Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method

Номер патента: EP1360722A2. Автор: Thomas Weiss,Nicolaas J. A. Van Veen,Marc A. De Sambre. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-11-12.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20150235994A1. Автор: Yoshihiro Sato,Takashi Ohba. Владелец: PS5 Luxco SARL. Дата публикации: 2015-08-20.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20190122953A1. Автор: Yuki Inaba,Taiki Satou. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-04-25.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20170062361A1. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-02.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US9793228B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-17.

Method of manufacturing a semiconductor device having a heat spreader

Номер патента: US20110104872A1. Автор: Yuko Sato,Takehiko Maeda,Fumiyoshi Kawashiro. Владелец: Renesas Electronics Corp. Дата публикации: 2011-05-05.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220139724A1. Автор: Adam Brown,Ricardo Yandoc,Manoj Balakrishnan,Anthony Matthew. Владелец: Nexperia BV. Дата публикации: 2022-05-05.

A semiconductor device and a method of manufacturing a semiconductor device

Номер патента: EP3996129A1. Автор: Adam Brown,Ricardo Yandoc,Manoj Balakrishnan,Anthony Matthew. Владелец: Nexperia BV. Дата публикации: 2022-05-11.

Method of Manufacturing a Semiconductor Device

Номер патента: US20110254150A1. Автор: Yoshimi Takahashi,Masazumi Amagai. Владелец: Texas Instruments Inc. Дата публикации: 2011-10-20.

Methods of forming packaged semiconductor devices and leadframes for semiconductor device packages

Номер патента: US12009286B2. Автор: Alexander Komposch,Eng Wah Woo,Soon Lee Liew. Владелец: MACOM Technology Solutions Holdings Inc. Дата публикации: 2024-06-11.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20160322464A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-11-03.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20170162660A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-06-08.

Semiconductor device, semiconductor module and manufacturing method

Номер патента: WO2023138873A1. Автор: Chunlei Liu,Juergen Schuderer,Fabian MOHN,Giovanni SALVATORE. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2023-07-27.

Semiconductor device package comprising thermal interface layer and method of fabricating of the same

Номер патента: US20210118771A1. Автор: SunYong Lee,Sarah Eunkyung Kim,Tae Hyeob Im. Владелец: Foundation for Research and Business of Seoul National University of Science and Technology. Дата публикации: 2021-04-22.

A method of assembling a semiconductor device package

Номер патента: EP1188182A1. Автор: Charles Lee,Helmut Strack. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2002-03-20.

A locking clip, a semiconductor device, and a method of manufacturing a semiconductor device

Номер патента: EP4365941A1. Автор: Ricardo Yandoc,Dolores Milo. Владелец: Nexperia BV. Дата публикации: 2024-05-08.

Locking Clip, a Semiconductor Device, and a Method of Manufacturing a Semiconductor Device

Номер патента: US20240153838A1. Автор: Ricardo Yandoc,Dolores Milo. Владелец: Nexperia BV. Дата публикации: 2024-05-09.

Semiconductor device, semiconductor module and manufacturing method

Номер патента: EP4216259A1. Автор: Chunlei Liu,Juergen Schuderer,Fabian MOHN,Giovanni SALVATORE. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2023-07-26.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

Номер патента: WO2015124465A1. Автор: Rainer Minixhofer,Martin Schrems,Sara Carniello. Владелец: ams AG. Дата публикации: 2015-08-27.

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Номер патента: US20180005941A1. Автор: Clevenger Lawrence A.,Penny Christopher J.,BRIGGS Benjamin David,DEPROSPO Bartlet H.,RIZZOLO Michael,Huang Huai. Владелец: . Дата публикации: 2018-01-04.

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Номер патента: US20180190585A1. Автор: Clevenger Lawrence A.,Penny Christopher J.,BRIGGS Benjamin David,DEPROSPO Bartlet H.,RIZZOLO Michael,Huang Huai. Владелец: . Дата публикации: 2018-07-05.

Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device

Номер патента: US20190279931A1. Автор: Clevenger Lawrence A.,Penny Christopher J.,BRIGGS Benjamin David,DEPROSPO Bartlet H.,RIZZOLO Michael,Huang Huai. Владелец: . Дата публикации: 2019-09-12.

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Номер патента: US20180366408A1. Автор: Clevenger Lawrence A.,Penny Christopher J.,BRIGGS Benjamin David,RIZZOLO Michael,Huang Huai,DEPROSPO Bartlef H.. Владелец: . Дата публикации: 2018-12-20.

SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Номер патента: US20200388568A1. Автор: Clevenger Lawrence A.,Penny Christopher J.,BRIGGS Benjamin David,DEPROSPO Bartlet H.,RIZZOLO Michael,Huang Huai. Владелец: TESSERA, INC.. Дата публикации: 2020-12-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20060163719A1. Автор: Tetsuya Kaji,Megumi Yamamura,Toshihide Shimmei. Владелец: Toshiba Corp. Дата публикации: 2006-07-27.

Semiconductor Device with Post-Passivation Interconnect Structure and Method of Forming the Same

Номер патента: US20150228598A1. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-08-13.

Semiconductor device, method of manufacturing the semiconductor device, flip chip package having the semiconductor device and method of manufacturing the flip chip package

Номер патента: US8530275B2. Автор: You-Seung Jin,Se-Young Lee,Geon-Woo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-10.

Semiconductor device, method of manufacturing the semiconductor device, flip chip package having the semiconductor device and method of manufacturing the flip chip package

Номер патента: US20120295402A1. Автор: You-Seung Jin,Se-Young Lee,Geon-Woo Park. Владелец: Individual. Дата публикации: 2012-11-22.

Method of manufacturing a semiconductor device, semiconductor device obtained by means of said method, and device for carrying outsuch a method

Номер патента: WO2004084294A1. Автор: Johannus W. Weekamp,Gerardus Van Herwijnen,Jacobus P. J. Van Os. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2004-09-30.

Method of producing a semiconductor device

Номер патента: US20010006830A1. Автор: Volker Strutz,Rüdiger Uhlmann,Stephan Wege,Achim Neu. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2001-07-05.

Method of producing a semiconductor device comprising a cleaning process for removing silicon-containing material

Номер патента: US6436731B2. Автор: Volker Strutz,Rüdiger Uhlmann,Stephan Wege,Achim Neu. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2002-08-20.

SEMICONDUCTOR DEVICE WITH CONTACTS AND METAL INTERCONNECTS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер патента: US20150371945A1. Автор: INOUE Naoya,Hayashi Yoshihiro,HIJIOKA Kenichiro. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2015-12-24.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240266238A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-08.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11158615B2. Автор: Won Geol Lee,Il Bok Lee,In Su Mok,Won Myoung Ki. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-10-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US12125832B2. Автор: Won Geol Lee,Il Bok Lee,In Su Mok,Won Myoung Ki. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-10-22.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210013144A1. Автор: Ji Yeon Ryu,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-01-14.

Packaged semiconductor devices and methods of packaging semiconductor devices

Номер патента: US9871018B2. Автор: Chen-Hua Yu,Chung-Shi Liu,Ming-Da Cheng,Wei-Hung Lin,Hui-min Huang,Chih-Fan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-16.

Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

Номер патента: US20240282675A1. Автор: Toshio Hanada. Владелец: ROHM CO LTD. Дата публикации: 2024-08-22.

Method of making flexible semiconductor device with graphene tape

Номер патента: US11456188B2. Автор: Zhijie Wang,Meng Kong Lye,You Ge. Владелец: NXP USA Inc. Дата публикации: 2022-09-27.

Method of manufacturing a semiconductor device

Номер патента: US20160079201A1. Автор: Won Chul Do,Jin Hee Park. Владелец: Amkor Technology Inc. Дата публикации: 2016-03-17.

Semiconductor device package structure and manufacturing method thereof

Номер патента: US20240178150A1. Автор: Hao-Yi Tsai,Tzuan-Horng LIU,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Semiconductor device, semiconductor substrate and manufacturing method thereof

Номер патента: US20240047343A1. Автор: Ho-Ming Tong. Владелец: Nd Hi Technologies Lab inc. Дата публикации: 2024-02-08.

Method of manufacturing a semiconductor device and a fabrication apparatus for a semiconductor device

Номер патента: US20050250254A1. Автор: Susumu Takada,Yoshihiko Kobayashi,Norinaga Arai,Shiro Oba,Kazutoshi Takashima,Tsutomu Ida,Shigeru Haga,Akio Ishizu,Yuji Kakegawa,Iwamichi Koujiro. Владелец: Hitachi Tohbu Semiconductor Ltd. Дата публикации: 2005-11-10.

Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices

Номер патента: US20150162316A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Ming-Da Cheng,Wei-Hung Lin,Hui-min Huang,Chih-Fan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-06-11.

Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices

Номер патента: US20160190096A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Ming-Da Cheng,Wei-Hung Lin,Hui-min Huang,Chih-Fan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-06-30.

Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

Номер патента: US11967543B2. Автор: Toshio Hanada. Владелец: ROHM CO LTD. Дата публикации: 2024-04-23.

Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

Номер патента: US11973007B2. Автор: Toshio Hanada. Владелец: ROHM CO LTD. Дата публикации: 2024-04-30.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230253279A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-08-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210280484A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-09-09.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11978687B2. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-05-07.

Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

Номер патента: US20240047311A1. Автор: Toshio Hanada. Владелец: ROHM CO LTD. Дата публикации: 2024-02-08.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200373214A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-11-26.

Method of connecting multilevel semiconductor devices

Номер патента: RU2629904C2. Автор: Цзюньфэн ЧЖАО. Владелец: Интел Корпорейшн. Дата публикации: 2017-09-04.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230352370A1. Автор: George Scott,Kwang Seok Oh,Won Bae Bang. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-11-02.

Semiconductor device mounting structure and manufacturing method thereof, and peeling method of semiconductor device

Номер патента: JP2008311459A. Автор: 裕美 神澤,Hiromi Kanzawa. Владелец: Panasonic Corp. Дата публикации: 2008-12-25.

Method of manufacturing a semiconductor device and corresponding semiconductor device

Номер патента: EP4220692A1. Автор: Mauro Mazzola,Fabio Marchisi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-08-02.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20240274512A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-15.

Hybrid bonding structures, semiconductor devices having the same, and methods of manufacturing the semiconductor devices

Номер патента: US20220093549A1. Автор: Junghoon Lee,Kunmo Chu,Byonggwon SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-24.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240347411A1. Автор: Keun Soo Kim,Yu Jin Jeon,Young Ik Kwon,Mi Kyoung Choi. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-10-17.

Method of manufacturing a semiconductor device and the corresponding semiconductor device

Номер патента: EP4220693A1. Автор: Mauro Mazzola,Fabio Marchisi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-08-02.

Method of manufacturing a semiconductor device

Номер патента: US10998246B2. Автор: Noriaki MINETA. Владелец: Renesas Electronics Corp. Дата публикации: 2021-05-04.

Semiconductor device including through via, semiconductor package, and method of fabricating the same

Номер патента: US12107109B2. Автор: Taeseong Kim,Yi Koan Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-01.

Method of manufacturing a semiconductor device

Номер патента: US11923273B2. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Semiconductor device package with stress reduction design and method of forming the same

Номер патента: US11894320B2. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

A semiconductor device and a method of manufacturing such semiconductor device

Номер патента: EP4184566A1. Автор: Ricardo Yandoc,Dilder Chowdhury. Владелец: Nexperia BV. Дата публикации: 2023-05-24.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US10840169B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-11-17.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11915998B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-02-27.

Manufacturing method of ultra-thin semiconductor device package assembly

Номер патента: US20160211240A1. Автор: Chih-Cheng Hsieh,Hsiu-wen Hsu. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2016-07-21.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20210090977A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-03-25.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11417589B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2022-08-16.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20200266132A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-08-20.

Semiconductor device and a method of manufacturing such semiconductor device

Номер патента: US20230163053A1. Автор: Ricardo Yandoc,Dilder Chowdhury. Владелец: Nexperia BV. Дата публикации: 2023-05-25.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200402885A1. Автор: Keun Soo Kim,Yu Jin Jeon,Young Ik Kwon,Mi Kyoung Choi. Владелец: Amkor Technology Korea Inc. Дата публикации: 2020-12-24.

Method of manufacturing a semiconductor device

Номер патента: US20150104904A1. Автор: Eiji Osugi. Владелец: Renesas Electronics Corp. Дата публикации: 2015-04-16.

Method of making a semiconductor device having multiple die redistribution layer

Номер патента: US20080160674A1. Автор: Hem Takiar,Shrikar Bhagath. Владелец: SanDisk Corp. Дата публикации: 2008-07-03.

PLASMA TREATMENT APPARATUS, A METHOD OF MONITORING A PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE BY USING THE SAME, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THE MONITORING METHOD

Номер патента: US20220181219A1. Автор: LIM MEEHYUN,KIM SUNG-YEOL,KIM SUNGHYUP,YONG HYUNG-JUNG. Владелец: . Дата публикации: 2022-06-09.

Etching stop structure, method of manufacturing the etching stop structure, semiconductor device having the etching stop structure and method of manufacturing the semiconductor device

Номер патента: KR100655774B1. Автор: 신원식,박재영,유영섭,임헌형,남석우,장원준,이현덕,임기빈,형용우. Владелец: 삼성전자주식회사. Дата публикации: 2006-12-11.

Recessed gate structures including blocking members, methods of forming the same, semiconductor devices having the recessed gate structures and methods of forming the semiconductor devices

Номер патента: US20060289931A1. Автор: Eun-Cheol Lee,Tae-Young Chung,Yong-Sung Kim,Soo-Ho Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-12-28.

Recessed gate structure, method of forming the recessed gate structure, semiconductor device having the recessed gate structure and method of manufacturing the semiconductor device

Номер патента: KR100683089B1. Автор: 이은철,정태영,김용성,신수호. Владелец: 삼성전자주식회사. Дата публикации: 2007-02-15.

Single crystalline structure, method of forming the same, semiconductor device having the single crystalline structure, and method of manufacturing the semiconductor device

Номер патента: US20060157708A1. Автор: Hye-Soo Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-07-20.

Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device

Номер патента: US20130307127A1. Автор: Hans-Joachim Schulze,Markus Zundel,Alexander Susiti,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-11-21.

Power semiconductor device, rotating electric machine including same, and method of manufacturing power semiconductor device

Номер патента: US20190287871A1. Автор: Shou HASEGAWA. Владелец: Denso Corp. Дата публикации: 2019-09-19.

A method for producing a protective layer against HF etching, semiconductor device equipped with the protective layer, and methods of manufacturing the semiconductor device

Номер патента: DE112012004523T5. Автор: Luigi Esposito,Stefano Losa,Raffaella Pezzuto,Roberto Campedelli,Matteo Perletti,Mikel Azpeitia Urquia. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2014-08-14.

Power semiconductor device for suppressing substrate recirculation current and method of fabricating power semiconductor device

Номер патента: US7420260B2. Автор: Tae-hun Kwon,Cheol-Joong Kim,Young-sub Jeong. Владелец: Fairchild Korea Semiconductor Ltd. Дата публикации: 2008-09-02.

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

Номер патента: CN100416821C. Автор: 金镇宇,金周灿,金大根,朴在铉,金龙希,朴翔煜,侑在珉,权喆纯,李燉雨,金国珉,柳义烈. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-09-03.

Power semiconductor device, rotating electric machine including same, and method of manufacturing power semiconductor device

Номер патента: US11094603B2. Автор: Shou HASEGAWA. Владелец: Denso Corp. Дата публикации: 2021-08-17.

Semiconductor device having an improved isolation structure, and method of manufacturing the semiconductor device

Номер патента: US20020190345A1. Автор: Shigeki Komori. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-19.

Semiconductor device comprising a field-effect transistor and method of producing the semiconductor device

Номер патента: EP0415768B1. Автор: Masahisa Suzuki. Владелец: Fujitsu Ltd. Дата публикации: 1996-06-05.

Semiconductor device and method of fabricating the semiconductor device

Номер патента: US10242936B2. Автор: Norikazu Nakamura,Junji Kotani. Владелец: Fujitsu Ltd. Дата публикации: 2019-03-26.

Semiconductor device and ltps-TFT within and method of making the semiconductor device

Номер патента: TW200603407A. Автор: Wen-Bin Hsu,Kuang-Chao Yeh. Владелец: AU OPTRONICS CORP. Дата публикации: 2006-01-16.

SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR BUFFER STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE

Номер патента: US20150111369A1. Автор: PARK Young-Soo,CHAE Su-hee,KIM Jun-youn,TAK Young-jo,KIM Jae-kyun,KIM Joo-sung. Владелец: . Дата публикации: 2015-04-23.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

Номер патента: US20170062504A1. Автор: Rainer Minixhofer,Martin Schrems,Sara Carniello. Владелец: ams AG. Дата публикации: 2017-03-02.

INSPECTION APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

Номер патента: US20170116727A1. Автор: KIM Kwang Soo,Park Sangbong,KIM YOUNGDUK,JEON Byeonghwan. Владелец: . Дата публикации: 2017-04-27.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20170162660A1. Автор: Schloesser Till,Meiser Andreas. Владелец: . Дата публикации: 2017-06-08.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20160322464A1. Автор: Schloesser Till,Meiser Andreas. Владелец: . Дата публикации: 2016-11-03.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20050140000A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2005-06-30.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20040157376A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2004-08-12.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20210143113A1. Автор: Katsuhiro TAKAO. Владелец: Aoi Electronics Co Ltd. Дата публикации: 2021-05-13.

Method of manufacturing a semiconductor device

Номер патента: US12040308B2. Автор: Jin Woong Kim,Sung Kyu Kim. Владелец: SK hynix Inc. Дата публикации: 2024-07-16.

Semiconductor device including a suspended reinforcing layer and method of manufacturing same

Номер патента: US12033958B2. Автор: BO Yang,Cong Zhang,Ning Ye,Shenghua Huang,Yangming Liu. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-07-09.

Method of fabricating a semiconductor device

Номер патента: US20100178736A1. Автор: Gottfried Beer,Irmgard Escher-Poeppel. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-07-15.

Method of manufacturing a semiconductor device package having dummy dies

Номер патента: US12125822B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Method of forming a semiconductor device package having dummy dies

Номер патента: US20240371829A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230299016A1. Автор: Myoungsoo Kim,Jisung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-21.

Semiconductor device and method of packaging a semiconductor device with a clip

Номер патента: US20130285249A1. Автор: Chee Chian Lim,Yoke Chin Goh,Boon Huat Lim. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-10-31.

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

Номер патента: US11728297B2. Автор: ATSUSHI Fujisaki,Ho-Jin Lee,Kwang-jin Moon,Ju-Il Choi,Dong-Chan Lim,Ju-Bin Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12094804B2. Автор: Zhan Ying,Jie Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

Method of Producing a Semiconductor Device and Semiconductor Device Having a Through-Wafer Interconnect

Номер патента: US20120286430A1. Автор: Jochen Kraft,Jordi Teva. Владелец: austriamicrosystems AG. Дата публикации: 2012-11-15.

Semiconductor device having antenna and manufacturing method thereof

Номер патента: US20230307391A1. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

Semiconductor device having antenna and manufacturing method thereof

Номер патента: US12057415B2. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via

Номер патента: US12100644B2. Автор: Thomas Bodner,Joerg Siegert,Bernhard Loeffler. Владелец: ams AG. Дата публикации: 2024-09-24.

Semiconductor device having antenna and manufacturing method thereof

Номер патента: US10741508B2. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-11.

Adhesive film, method of manufacturing semiconductor device, and semiconductor device

Номер патента: US9105754B2. Автор: Kenji Onishi,Sadahito Misumi,Yuichiro Shishido. Владелец: Nitto Denko Corp. Дата публикации: 2015-08-11.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210408757A1. Автор: Ramakanth Alapati,Darrell Paul Baker,Anthony B. Taguinod. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-12-30.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11784457B2. Автор: Ramakanth Alapati,Darrell Paul Baker,Anthony B. Taguinod. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-10-10.

Semiconductor device and method of enveloping the semiconductor device

Номер патента: CA1093704A. Автор: Gerard J. Scholten,Johannes Brandsma. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1981-01-13.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20220375901A1. Автор: Susumu Yamamoto,Tsutomu Fujita,Gen Toyota,Satoshi Hongo,Yukio KATAMURA,Takeori Maeda,Eiichi SHIN. Владелец: Kioxia Corp. Дата публикации: 2022-11-24.

Method of manufacturing a semiconductor device using SEG and a transitory substrate

Номер патента: US4970175A. Автор: Jan Haisma,Johannes E. A. M. van den Meerakker,Josephus H. C. van Vegchel. Владелец: US Philips Corp. Дата публикации: 1990-11-13.

Manufacturing method of three-dimensional semiconductor device

Номер патента: US11705189B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-07-18.

Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages

Номер патента: EP2873094A1. Автор: JIAN Li,Shijian Luo,Steven Groothuis. Владелец: Micron Technology Inc. Дата публикации: 2015-05-20.

Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages

Номер патента: WO2014011638A1. Автор: JIAN Li,Shijian Luo,Steven Groothuis. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-01-16.

Semiconductor devices and methods of fabricating a semiconductor device

Номер патента: US12068359B2. Автор: Chor Shu CHENG,Lulu Peng,Lawrence Selvaraj SUSAI,Zishan Ali Syed Mohammed,Yong Chau Ng,Nuraziz Yosokumoro. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-08-20.

Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages

Номер патента: US20140327130A1. Автор: JIAN Li,Shijian Luo,Steven Groothuis. Владелец: Micron Technology Inc. Дата публикации: 2014-11-06.

Semiconductor device, an electronic system including the same, and a method of manufacturing the semiconductor device

Номер патента: US11744079B2. Автор: Chang-sun Hwang,Chungki MIN,Donghoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-29.

Semiconductor device, and life prediction circuit and life prediction method for semiconductor device

Номер патента: US20070296040A1. Автор: Takashi Igarashi,Fumitaka Tametani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-12-27.

Semiconductor device including a field effect transistor and method of fabricating the same

Номер патента: US20240332358A1. Автор: Jinkyu Kim,Yunsuk NAM,Seungmin Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Semiconductor device, a method of manufacturing a semiconductor device and a testing method of the same

Номер патента: US7816154B2. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2010-10-19.

Semiconductor Device, A Method of Manufacturing A Semiconductor Device and A Testing Method of the Same

Номер патента: US20110018573A1. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2011-01-27.

Method of designing arrangement of tsv in stacked semiconductor device and designing system for arrangement of tsv in stacked semiconductor device

Номер патента: US20140258949A1. Автор: Myung-Soo JANG,Jae-Rim LEE,Jong-Wha Chong,Min-Beom KIM,Wen Rui LI,Cheol-Jon JANG. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2014-09-11.

Semiconductor device, an electronic system including the same, and a method of manufacturing the semiconductor device

Номер патента: US20220254802A1. Автор: Chang-sun Hwang,Chungki MIN,Donghoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-11.

Semiconductor device having hybrid bonding interface, method of manufacturing the semiconductor device, and method of manufacturing semiconductor device assembly

Номер патента: US20210242050A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2021-08-05.

Method of Manufacturing a Semiconductor Device Having an Integrated pn Diode Temperature Sensor

Номер патента: US20200006185A1. Автор: Mark Harrison,Georg SCHINNER. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2020-01-02.

Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device

Номер патента: US9818701B2. Автор: Taiji Ema,Kazutaka Yoshizawa,Takuya Moriki. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2017-11-14.

Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device

Номер патента: US20130069206A1. Автор: Taiji Ema,Kazutaka Yoshizawa,Takuya Moriki. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-03-21.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210013196A1. Автор: Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-14.

Semiconductor device, battery management system and method of producing a semiconductor device

Номер патента: EP4310891A1. Автор: Paul Frank,Mark Pavier,Sandra Ebner,Evelyn Napetschnig,Christian Ranacher,Stanislav VITANOV. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-24.

Semiconductor device, battery management system and method of producing a semiconductor device

Номер патента: US20240030502A1. Автор: Paul Frank,Mark Pavier,Sandra Ebner,Evelyn Napetschnig,Christian Ranacher,Stanislav VITANOV. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-25.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180269169A1. Автор: Takeshi Morita,Yukihiro Imura,Shinjiro Kato,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2018-09-20.

Method of manufacturing a semiconductor device

Номер патента: US12119337B2. Автор: Junichi Shibata. Владелец: Kioxia Corp. Дата публикации: 2024-10-15.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240282695A1. Автор: Jae Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2024-08-22.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230292500A1. Автор: Mi Ra CHOI. Владелец: SK hynix Inc. Дата публикации: 2023-09-14.

Semiconductor chip, semiconductor wafer, semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20020013012A1. Автор: Masao Mitani,Jin Murayama. Владелец: Individual. Дата публикации: 2002-01-31.

Three dimensional semiconductor device containing composite contact via structures and methods of making the same

Номер патента: US20220246517A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Monica TITUS. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-04.

Semiconductor device, method of designing a layout of a semiconductor device, and method of manufacturing a semiconductor device

Номер патента: US10474783B2. Автор: SUBHASH KUCHANURI,Sidharth Rastogi,Jae-Seok Yang,Chul-Hong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-12.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230352397A1. Автор: Eiji HIRAIWA. Владелец: Renesas Electronics Corp. Дата публикации: 2023-11-02.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170170122A1. Автор: Rainer Mintzlaff,Hans-Martin Ritter,Frank Burmeister,Jochen Wynants,Joachim Utzig,Godfried Henricus Josephus Notermans. Владелец: NXP BV. Дата публикации: 2017-06-15.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8030207B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-10-04.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20080284027A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Ltd. Дата публикации: 2008-11-20.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8338953B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-25.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8536708B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-09-17.

Semiconductor device including graphene interconnect and method of making the semiconductor device

Номер патента: US20230335497A1. Автор: Ming-Han Lee,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Method of manufacturing a semiconductor device

Номер патента: US20130221440A1. Автор: Shigeru Mori. Владелец: NLT Technologeies Ltd. Дата публикации: 2013-08-29.

Manufacturing method of three-dimensional semiconductor device including contact plugs

Номер патента: US12046512B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-23.

Method of manufacturing a semiconductor device

Номер патента: US20150364458A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Wen-De Wang,Cheng-Ying Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-12-17.

Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device

Номер патента: US20230299168A1. Автор: Sung-Li Wang,Po-Chin Chang,Pinyen Lin,Shuen-Shin Liang,Chia-Hung Chu,Yuting CHENG,Ken-Yu Chang,Wei-Yip Loh,Hung-Yi Huang,Hsu-Kai Chang,Kuan-Kan HU,Chuan-Hui SHEN,Harry CHIEN,Tzu-Pei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Semiconductor device with low-galvanic corrosion structures, and method of making same

Номер патента: US20230253249A1. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

Method of etching a semiconductor device

Номер патента: US7144749B2. Автор: Khim Hong Ng,Chin Ling Pong. Владелец: Systems on Silicon Manufacturing Co Pte Ltd. Дата публикации: 2006-12-05.

Method of manufacturing a semiconductor device

Номер патента: US11715636B2. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Structure and method of forming a semiconductor device with resistive elements

Номер патента: US12074107B2. Автор: Wen-Sheh Huang,Yung-Shih Cheng,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Method of manufacturing a semiconductor device

Номер патента: US20230326741A1. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-12.

Structure and method of forming a semiconductor device with resistive elements

Номер патента: US20240371757A1. Автор: Wen-Sheh Huang,Yung-Shih Cheng,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of manufacturing a semiconductor device

Номер патента: US20220359502A1. Автор: Jung-Hui Kao,Kong-Beng Thei,Fu-Jier Fan,Yi-huan Chen,Yi-Sheng Chen,Kau-Chu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Method of manufacturing a semiconductor device

Номер патента: US20160372368A1. Автор: Jian-Hong Lin,Shiou-Fan CHEN,Chwei-Ching Chiu,Yung-Huei Lee,Hsin-Chun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-22.

Semiconductor device including three-dimensional inductor structure and method of forming the same

Номер патента: US12094921B2. Автор: Chia-Wie Chang. Владелец: Richwave Technology Corp. Дата публикации: 2024-09-17.

Method of making a semiconductor device with V2V rail

Номер патента: US12125792B2. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Jung-Chan YANG,Chi-Yu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Semiconductor Device Comprising a Fuse Structure and a Method for Manufacturing such Semiconductor Device

Номер патента: US20140127895A1. Автор: Wolfgang Walter,Uwe Seidel,Hubert Werthmann,Michael Schrenk,Gabriele Bettineschi. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-05-08.

Semiconductor device with l-shape conductive feature and methods of forming the same

Номер патента: EP3944295A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Yi-Hsun CHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20160071859A1. Автор: Sadatoshi Murakami,Weiting Wang,Fumiharu Nakajima,Yoko Yokoyama. Владелец: Toshiba Corp. Дата публикации: 2016-03-10.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20210098291A1. Автор: Hideo Yoshino. Владелец: Ablic Inc. Дата публикации: 2021-04-01.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11424159B2. Автор: Hideo Yoshino. Владелец: Ablic Inc. Дата публикации: 2022-08-23.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170170089A1. Автор: Johannes Josephus Theodorus Marinus Donkers,Mark Andrzej Gajda,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2017-06-15.

Semiconductor device, method of designing a layout of a semiconductor device, and method of manufacturing a semiconductor device

Номер патента: US20180157781A1. Автор: SUBHASH KUCHANURI,Sidharth Rastogi,Jae-Seok Yang,Chul-Hong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-07.

Semiconductor device having self-aligned interconnect structure and method of making

Номер патента: US11854940B2. Автор: Ching-Wei Tsai,Hui-Zhong ZHUANG,Chih-Liang Chen,Shang-Wen Chang,Chih-Yu Lai,Chi-Yu Lu,Shang-Syuan Ciou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20170062327A1. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180068944A1. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-08.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US9831179B2. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-28.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240047384A1. Автор: Hsiang-Tai Lu,Yang-Che CHEN,Chi-Hui Lai,Wei-Ray Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-08.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20110241211A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-10-06.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20120326315A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-27.

Method of manufacturing a semiconductor device having interconnections located both above a semiconductor region and above an isolation region adjoining it

Номер патента: US4973562A. Автор: Hubertus J. den Blanken. Владелец: US Philips Corp. Дата публикации: 1990-11-27.

Semiconductor device for low-power applications and a method of manufacturing thereof

Номер патента: US7985673B2. Автор: Viet Nguyen Hoang,Phillip Christie,Julien M. M. Michelon. Владелец: NXP BV. Дата публикации: 2011-07-26.

Method of fabricating a semiconductor device including metal gate electrode and electronic fuse

Номер патента: US20090163016A1. Автор: Jin-woo Kim,Min-chul Sun,Hyung-Suk Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-25.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240162149A1. Автор: Ji Seong Kim,Wan Sup SHIN,Yoon Ho KANG,Seok Min JEON. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Method of manufacturing a semiconductor device with a multilayer wiring

Номер патента: US6143651A. Автор: Marian N. Webster,Albertus G. Dirks. Владелец: US Philips Corp. Дата публикации: 2000-11-07.

Method of manufacturing a semiconductor device

Номер патента: US9818735B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Wen-De Wang,Cheng-Ying Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Semiconductor device with polymer-based insulating material and method of producing thereof

Номер патента: US11804432B2. Автор: Markus Zundel,Andreas Behrendt,Michael Sorger,Dominic Thurmer,Uwe Schmalzbauer,Sergey ANANIEV,Holger Doepke. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-10-31.

Method of manufacturing a semiconductor device

Номер патента: US20110049709A1. Автор: Noriyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-03-03.

Wafer and method of making, and semiconductor device

Номер патента: US20230230936A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

Wiring structure with conductive features having different critical dimensions, and method of manufacturing the same

Номер патента: US20240047354A1. Автор: Min-Chung Cheng. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-08.

Method of Manufacturing a Semiconductor Device

Номер патента: US20120007238A1. Автор: Noriyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-12.

Wiring structure with conductive features having different critical dimensions, and method of manufacturing the same

Номер патента: US20240047355A1. Автор: Min-Chung Cheng. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-08.

A method of manufacturing a semiconductor device, and a semiconductor device

Номер патента: WO2009013531A2. Автор: Paul Ronald Stribley. Владелец: X-Fab Semiconductor Foundries AG. Дата публикации: 2009-01-29.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240274593A1. Автор: Seokho KIM,Sumin Park,Joohee Jang,Seongmin Son,Kyuha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Method of producing a semiconductor device

Номер патента: US3762967A. Автор: H Holzer,W Scherber. Владелец: Licentia Patent Verwaltungs GmbH. Дата публикации: 1973-10-02.

Method of manufacturing a semiconductor device including PG-aligned cells

Номер патента: US12112117B2. Автор: Hiranmay BISWAS,Kuo-Nan Yang,Chung-Hsing Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor device including alignment key, electronic system, and method of forming the same

Номер патента: US20220302041A1. Автор: Seungmin Lee,Kwanyong Kim,Wonseok Cho,Sungwon SHIN,Juyoung Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-22.

Semiconductor device having different size active regions and method of making

Номер патента: US20230275090A1. Автор: Chun-Yen Lin,Yi-Kan Cheng,Jiann-Tyng Tzeng,Sheng-Feng Huang,Shang-Wei Fang,Lee-Chung Lu,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Semiconductor device, electronic system including the same, and method of fabricating the same

Номер патента: EP4432804A1. Автор: Ahreum LEE,Sukkang SUNG,Woosung YANG,Jimo GU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

Semiconductor device, electronic system including the same, and method of fabricating the same

Номер патента: US20240315023A1. Автор: Ahreum LEE,Sukkang SUNG,Woosung YANG,Jimo GU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Method of fabricating a semiconductor device

Номер патента: US12051696B2. Автор: Jaeseok Yang,Taehyung Kim,Panjae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

Semiconductor device having porous region embedded structure and method of manufacture thereof

Номер патента: US12054838B2. Автор: Guy Parat,Frederic Voiron,Julien EL SABAHY,Maxime LEMENAGER. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2024-08-06.

Method of connecting multilevel semiconductor devices

Номер патента: RU2664894C1. Автор: Цзюньфэн ЧЖАО. Владелец: Интел Корпорейшн. Дата публикации: 2018-08-23.

Semiconductor device and production method of the same semiconductor device

Номер патента: US20080258315A1. Автор: Sadayuki Okuma. Владелец: Elpida Memory Inc. Дата публикации: 2008-10-23.

Three-dimensional (3d) semiconductor devices and methods of fabricating 3d semiconductor devices

Номер патента: US20160240555A1. Автор: Youngwoo Park,Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-18.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: WO2008007259A3. Автор: Hoang Viet Nguyen. Владелец: Hoang Viet Nguyen. Дата публикации: 2008-06-12.

Method of making a semiconductor device, and semiconductor device made thereby

Номер патента: EP1723673A2. Автор: Peter Zurcher,Melvy F. Miller,Thomas P. Remmel,Sriram; Kalpat. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2006-11-22.

Method of making a semiconductor device, and semiconductor device made thereby

Номер патента: WO2005091795A2. Автор: Peter Zurcher,Melvy F. Miller,Sriram Kalpat,Thomas P. Remmel. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2005-10-06.

Method of manufacturing a semiconductor device and device manufactured by the method

Номер патента: US3811975A. Автор: Lierop J Van. Владелец: US Philips Corp. Дата публикации: 1974-05-21.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230369252A1. Автор: Jae Taek Kim. Владелец: SK hynix Inc. Дата публикации: 2023-11-16.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240121951A1. Автор: Jae Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core

Номер патента: US6417039B2. Автор: Marian N. Webster. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-07-09.

Method of making a semiconductor device with changeable interconnection

Номер патента: US6069076A. Автор: Yasuji Takahashi. Владелец: Yamaha Corp. Дата публикации: 2000-05-30.

Semiconductor device including metal insulator metal capacitor and method of making

Номер патента: US11855126B2. Автор: Chien-Chung Chen,Chun-Yuan Hsu,Yan-Jhih HUANG,Yung-Hsieh LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device including metal insulator metal capacitor and method of making

Номер патента: US20220085148A1. Автор: Chien-Chung Chen,Chun-Yuan Hsu,Yan-Jhih HUANG,Yung-Hsieh LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-17.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20020034843A1. Автор: Florin Udrea,Gehan Amaratunga. Владелец: Cambridge Semiconductor Ltd. Дата публикации: 2002-03-21.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

Номер патента: US7189637B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-03-13.

Method of mounting a semiconductor device to a substrate and a mounted structure

Номер патента: US20020005293A1. Автор: Tomoo Murakami. Владелец: Individual. Дата публикации: 2002-01-17.

Methods of forming a semiconductor device including a diffusion barrier film

Номер патента: US7816255B2. Автор: Gil-heyun Choi,Kyung-In Choi,Jong-Won Hong,Jong-Myeong Lee,Hyun-Bae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-10-19.

Method of manufacturing a semiconductor device

Номер патента: USRE28703E. Автор: Ties Siebolt Te Velde,Hein Koelmans. Владелец: US Philips Corp. Дата публикации: 1976-02-03.

Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Номер патента: US3811183A. Автор: W Celling. Владелец: US Philips Corp. Дата публикации: 1974-05-21.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20200111750A1. Автор: Stefan Beyer,Marius Aurel Bodea,Jia Yi WONG. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-04-09.

Semiconductor manufacturing method, semiconductor manufacturing apparatus and semiconductor device

Номер патента: US20190296001A1. Автор: Masatoshi Fukuda,Tetsuya Kurosawa,Toshihiko Ohda. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-26.

Method of forming a semiconductor device and structure therefor

Номер патента: MY175969A. Автор: D Moyers Richard,C Shastri Sudhama. Владелец: Semiconductor Components Ind Llc. Дата публикации: 2020-07-17.

Method of manufacturing a semiconductor device and a device obtained by means of said method

Номер патента: US20020123223A1. Автор: Johannes Van Rijckevorsel,Eugene Vriezen. Владелец: Individual. Дата публикации: 2002-09-05.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Method of bonding a semiconductor device to an electrically conductive plate

Номер патента: EP1366514A1. Автор: Johannes W. Van Rijckevorsel,Eugene A. Vriezen. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-12-03.

Method of forming a semiconductor device including strain reduced structure

Номер патента: US09997480B2. Автор: Hsien-Wei Chen,Yu-feng Chen,Tsung-Ding Wang,Ying-Ju Chen,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-12.

Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body

Номер патента: CA1271270A. Автор: Johannes S. Peters. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1990-07-03.

Silicon carbide semiconductor device, power conversion device, and manufacturing method of silicon carbide semiconductor device

Номер патента: US12027590B2. Автор: Munetaka Noguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-07-02.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US12087809B2. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US20240347579A1. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

Номер патента: US11735654B2. Автор: Shuhei Mitani,Yuichi Takeuchi,Ryota Suzuki,Yusuke Yamashita,Aiko KAJI. Владелец: Denso Corp. Дата публикации: 2023-08-22.

Semiconductor device having electrode and manufacturing method thereof

Номер патента: US20100159687A1. Автор: Tsutomu Okazaki,Tsuyoshi Koga,Daisuke Okada,Motoi Ashida,Hiroji Ozaki. Владелец: Renesas Technology Corp. Дата публикации: 2010-06-24.

Fiber SOI substrate, semiconductor device using this, and manufacturing method thereof

Номер патента: US8598017B2. Автор: Kenkichi Suzuki,Takashi Fuyuki,Hisashi Koaizawa,Sadayuki Toda. Владелец: Furukawa Electric Co Ltd. Дата публикации: 2013-12-03.

Fiber soi substrate, semiconductor device using this, and manufacturing method thereof

Номер патента: US20130023090A1. Автор: Kenkichi Suzuki,Takashi Fuyuki,Hisashi Koaizawa,Sadayuki Toda. Владелец: Furukawa Electric Co Ltd. Дата публикации: 2013-01-24.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: US20060128089A1. Автор: Viet Nguyen Hoang,Dirk Gravesteijn,Romano Julma Hoofman. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-06-15.

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

Номер патента: US20160308052A1. Автор: Byeong-Chan Lee,Jin-Bum Kim,Kwan-Heum Lee,Cho-Eun LEE,Su-Jin JUNG,Seok-Hoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-20.

Method of manufacturing a semiconductor device and such a semiconductor device

Номер патента: US20090166799A1. Автор: Youri Ponomarev,Vincent Charles Venezia,Josine Johanna Gerarda Petra Loo. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2009-07-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240297127A1. Автор: Mohamed Salleh Mohamed Saheed,Murugalogeswaran Permal. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-05.

Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method

Номер патента: WO2004070831A1. Автор: Yukiko Furukawa. Владелец: Interuniversitair Microelektronica Centrum Vzw,. Дата публикации: 2004-08-19.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200321433A1. Автор: Isamu SUGAI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-08.

Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

Номер патента: US20080124909A1. Автор: Keum-Joo Lee,Jin-Hye Bae,Dae-Keun Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-29.

Method of forming a semiconductor device and according semiconductor device

Номер патента: US20160079086A1. Автор: Kai Frohberg,Peter Moll,Hans-Juergen Thees,Dominic Thurmer,Heike Scholz. Владелец: Globalfoundries Inc. Дата публикации: 2016-03-17.

Method of manufacturing a semiconductor device

Номер патента: US20020135074A1. Автор: Haruo Shimamoto,Kazushi Hatauchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-09-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180158914A1. Автор: Shoji Kitamura,Kazuhiro Kitahara,Tsukasa TASHIMA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-07.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11776852B2. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200105608A1. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-02.

Semiconductor device including a field effect transistor and method of fabricating the same

Номер патента: US20240339451A1. Автор: Minju Kim,Junggil YANG,Inhyun SONG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-10-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210296439A1. Автор: Yu-Lin Yang,I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-23.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12119394B2. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240371982A1. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and method of manufacture

Номер патента: US20210091231A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2021-03-25.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: EP3945599A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220262955A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240266225A1. Автор: Chih-Chang Hung,Tzu-Ging LIN,Shun- Hui YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240250175A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device and method of making a semiconductor device

Номер патента: US20220344506A1. Автор: Kejun Xia,Saumitra Raj Mehrotra. Владелец: NXP USA Inc. Дата публикации: 2022-10-27.

Method of manufacturing a semiconductor device

Номер патента: US20090155971A1. Автор: Jong-wook Lee,Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-18.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20240372319A1. Автор: Tansen Varghese,Hubert Halbritter,Laura KREINER. Владелец: Ams Osram International GmbH. Дата публикации: 2024-11-07.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US12112952B2. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20060226558A1. Автор: Akihito Sakakidani,Toshinori Fukai. Владелец: NEC Electronics Corp. Дата публикации: 2006-10-12.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220029024A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-27.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20180122930A1. Автор: Shinichi Okamoto,Tsutomu Okazaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12062580B2. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297254A1. Автор: Wei-Fan Lee,Wen-Hsien TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Fabrication system of semiconductor device and method of fabricating a semiconductor device using the same

Номер патента: US20200348599A1. Автор: Jinhong Park,Seungmin Lee,Suntaek LIM,Jinseok Heo,Keunhee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-05.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240298446A1. Автор: Dong Hun Lee,In Su Park,Jung Dal Choi,Jung Shik JANG,Mi Seong PARK. Владелец: SK hynix Inc. Дата публикации: 2024-09-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240355681A1. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Semiconductor Device and Method of Manufacturing a Semiconductor Device

Номер патента: US20190385852A1. Автор: Hans-Joachim Schulze,Moriz Jelinek,Werner Schustereder,Christian Krueger,Michael Kokot. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-12-19.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230039627A1. Автор: Ching-Hung Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-09.

Method of fabricating a semiconductor device using laser annealing

Номер патента: US20230180473A1. Автор: LEI Liu,Zhiliang Xia,Kun Zhang,Zongliang Huo,Yuancheng YANG,Dongyu FAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-08.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US7550397B2. Автор: Sung Kyung Jung. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-06-23.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: US20220278119A1. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2022-09-01.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: US11737266B2. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2023-08-22.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20020155653A1. Автор: Masaaki Ikegami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-24.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20110183483A1. Автор: Hyun-Woo CHUNG,Yong-Chul Oh,Hyun-Gi Kim,Jae-Man Yoon,Hui-jung Kim,Kang-Uk Kim. Владелец: Individual. Дата публикации: 2011-07-28.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US20070148959A1. Автор: Sung Jung. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-28.

Method of making a semiconductor device having a thermal contact

Номер патента: US12094799B2. Автор: FENG HAN,Jian Wu,Shuai ZHANG. Владелец: TSMC China Co Ltd. Дата публикации: 2024-09-17.

Semiconductor device with built-in contacts (versions) and method of making semiconductor devices with built-in contacts (versions)

Номер патента: RU2394305C2. Автор: Кеннет Скотт Александр БАТЧЕР,Эп ФУКЕ Мари-Пьер Франсуаз ВИНТРЕБЕР,Аланна Хулия Хуне ФЕРНАНДЕС. Владелец: Гэлиэм Энтерпрайзис Пти Лтд. Дата публикации: 2010-07-10.

METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER

Номер патента: US20110111578A1. Автор: Masaki Ueno,Takao Nakamura,Yusuke Yoshizumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-05-12.

METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER

Номер патента: US20100279495A1. Автор: Masaki Ueno,Takao Nakamura,Yusuke Yoshizumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-11-04.

Method of manufacturing a semiconductor device

Номер патента: US20200152529A1. Автор: Hitomi Sakurai,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2020-05-14.

Method of manufacturing a semiconductor device and an apparatus for use in such a method

Номер патента: EP1647045A1. Автор: Ingrid A. Rink,Reinoldus B. M. Vroom. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-04-19.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20170053992A1. Автор: Masakazu Okada,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2017-02-23.

Method of manufacturing a semiconductor device and the semiconductor device

Номер патента: US8907423B2. Автор: Tadahiro MIWATASHI. Владелец: Renesas Electronics Corp. Дата публикации: 2014-12-09.

Semiconductor device layout structure and manufacturing method thereof

Номер патента: US20180069093A1. Автор: Gang Qian,Yanlin Sun,Yiming Miao,Xubo Chen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-03-08.

Method of Producing a Semiconductor Device and a Semiconductor Device

Номер патента: US20160071819A1. Автор: Manfred Engelhardt,Edward Fuergut,Bernd Roemer,Hannes Eder. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20020074572A1. Автор: Takashi Akioka,Masao Shinozaki,Kinya Mitsumoto. Владелец: HITACHI LTD. Дата публикации: 2002-06-20.

Method of manufacturing a semiconductor device and the semiconductor device

Номер патента: US20130087854A1. Автор: Tadahiro MIWATASHI. Владелец: Renesas Electronics Corp. Дата публикации: 2013-04-11.

Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer

Номер патента: US20180211830A1. Автор: Hyo-Sun Lee,Jung Hun Lim,Hoyoung Kim,Soojin Kim,Tae Soo Kwon,Hoon Han,Keonyoung KIM,Jinhye Bae. Владелец: Individual. Дата публикации: 2018-07-26.

Semiconductor device including a deep contact and a method of manufacturing such a device

Номер патента: US20130280906A1. Автор: Alfred Haeusler. Владелец: TEXAS INSTRUMENTS DEUTSCHLAND GMBH. Дата публикации: 2013-10-24.

Method of making a semiconductor device

Номер патента: RU2606780C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2017-01-10.

Method of bonding a semiconductor device using a compliant bonding structure

Номер патента: EP2404331A2. Автор: Stefano Schiaffino,John E. Epler,James G. Neff. Владелец: Philips Lumileds Lighing Co LLC. Дата публикации: 2012-01-11.

Method of bonding a semiconductor device using a compliant bonding structure

Номер патента: WO2010100577A2. Автор: Stefano Schiaffino,John E. Epler,James G. Neff. Владелец: PHILIPS LUMILEDS LIGHTING COMPANY, LLC. Дата публикации: 2010-09-10.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11842998B2. Автор: ChoongHyun Lee,Jingyun Zhang,Hemanth Jagannathan,Chun Wing Yeung,Robin Hsin Kuo Chao. Владелец: International Business Machines Corp. Дата публикации: 2023-12-12.

System and method of testing a semiconductor device and method of fabricating the semiconductor device

Номер патента: US11137435B2. Автор: Yongho Cho,Junbae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-05.

System and method of testing a semiconductor device and method of fabricating the semiconductor device

Номер патента: US20200033389A1. Автор: Yongho Cho,Junbae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297225A1. Автор: SHEN Wang,Shiang-Bau Wang,Che-Fu Chen,Hsu Ming Hsiao,Hong Pin Lin,Kung-Shu HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20040150055A1. Автор: Takashi Akioka,Masao Shinozaki,Kinya Mitsumoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-08-05.

Methods of manufacturing a semiconductor device and a semiconductor memory device thereby

Номер патента: US20120187471A1. Автор: Seong-soo Lee,Dae-hyun Jang,Gyung-Jin Min,Suk-Ho Joo,Yoo-Chul Kong,Han-Geun YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-26.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20020179979A1. Автор: Gyu-Chul Kim,Han-Soo Kim,Yong Park,Kang-Sik Cho,Hoo-Seung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-12-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297253A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Semiconductor device and method of manufacturing such semiconductor device

Номер патента: US20150325519A1. Автор: Hermanus Leonardus Peek,Willem Hendrik Maes,Wilco Klaassens. Владелец: Teledyne Dalsa BV. Дата публикации: 2015-11-12.

Semiconductor device and method of manufacturing such semiconductor device

Номер патента: EP2842164A1. Автор: Hermanus Leonardus Peek,Willem Hendrik Maes,Wilco Klaassens. Владелец: Teledyne Dalsa BV. Дата публикации: 2015-03-04.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20110306188A1. Автор: Kazuhiro Tsuruta,Nobuyuki Kato,Jun Kawai. Владелец: Denso Corp. Дата публикации: 2011-12-15.

Method of manufacturing a semiconductor device and semiconductor wafer

Номер патента: US20200381256A1. Автор: Roland Rupp,Hans-Joachim Schulze,Francisco Javier Santos Rodriguez. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-12-03.

Method for fabricating semiconductor device having radiation hardened insulators

Номер патента: US20100035393A1. Автор: John M. Aitken,Ethan H. Cannon. Владелец: Individual. Дата публикации: 2010-02-11.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210242309A1. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240274668A1. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Manufacturing method of high voltage semiconductor device

Номер патента: US12080794B2. Автор: Tsung-Yu Yang,Shin-Hung Li,Chang-Po Hsiung,Nien-Chung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12057445B2. Автор: Szu-Ping Tung,Hsiang-Ku Shen,Dian-Hau Chen,Chen-Chiu Huang,Wen-Tzu Chen,Guan-Yao TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230037025A1. Автор: Szu-Ping Tung,Hsiang-Ku Shen,Dian-Hau Chen,Chen-Chiu Huang,Wen-Tzu Chen,Guan-Yao TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20110089513A1. Автор: Nobuyuki Endo. Владелец: Canon Inc. Дата публикации: 2011-04-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11742404B2. Автор: Chun Chieh Wang,Yueh-Ching Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-29.

Methods of forming a semiconductor cell array region, method of forming a semiconductor device including the semiconductor cell array region, and method of forming a semiconductor module including the semiconductor device

Номер патента: US20110177671A1. Автор: Yong-Hoon Son,Byeong-Chan Lee,Sun-Ghil Lee,Sung-Woo Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-21.

Methods of forming a semiconductor device

Номер патента: US8278168B2. Автор: Hoonjoo NA,Sangjin Hyun,Hongbae PARK,Hyung-seok HONG,Sunghun HONG,Hagju CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-10-02.

Methods of forming a semiconductor device

Номер патента: US20120009746A1. Автор: Hoonjoo NA,Sangjin Hyun,Hongbae PARK,Hyung-seok HONG,Sunghun HONG,Hagju CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-01-12.

Semiconductor device with metal silicide blocking region and method of manufacturing the same

Номер патента: US20150187756A1. Автор: Ching-Chen Hao,I-Hsiang Hung,Wei-Der Sun. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-02.

Manufacturing method of mis-type semiconductor device

Номер патента: US20140287572A1. Автор: Toru Oka,Junya Nishii,Takahiro Sonoyama,Kiyotaka MIZUKAMI. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2014-09-25.

Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device

Номер патента: US20230367220A1. Автор: Yung-Yao Lee,Kuo-Hung Chao,Hsieh-Yu WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layer

Номер патента: US9299567B2. Автор: Toru Oka,Junya Nishii,Takahiro Sonoyama,Kiyotaka MIZUKAMI. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2016-03-29.

Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor Device

Номер патента: US20240194778A1. Автор: Armin Willmeroth,Frank Hille,Michael Hell,Caspar Leendertz,Rudolf Elpelt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-06-13.

Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width

Номер патента: US20240222509A1. Автор: Bernhard Sell. Владелец: Intel Corp. Дата публикации: 2024-07-04.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: EP4200903A1. Автор: Philip Gröger. Владелец: KLA Corp. Дата публикации: 2023-06-28.

Semiconductor device with cut metal gate and method of manufacture

Номер патента: US12112990B2. Автор: Yi-Chun Chen,Ryan Chia-Jen Chen,Shu-Yuan Ku,Ya-Yi Tsai,I-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor Device with Cut Metal Gate and Method of Manufacture

Номер патента: US20240371704A1. Автор: Yi-Chun Chen,Ryan Chia-Jen Chen,Shu-Yuan Ku,Ya-Yi Tsai,I-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor Device Including an Isolation Structure and Method of Manufacturing a Semiconductor Device

Номер патента: US20160190241A1. Автор: Till Schloesser,Christoph Kadow. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-06-30.

Semiconductor Device Including a Trench at Least Partially Filled with a Conductive Material in a Semiconductor Substrate and Method of Manufacturing a Semiconductor Device

Номер патента: US20160035842A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-02-04.

Method of manufacturing a semiconductor device and designing a mask pattern

Номер патента: US20020197567A1. Автор: Akira Matsumoto. Владелец: NEC Corp. Дата публикации: 2002-12-26.

Method of manufacturing a semiconductor device and designing a mask pattern

Номер патента: US6815148B2. Автор: Akira Matsumoto. Владелец: NEC Electronics Corp. Дата публикации: 2004-11-09.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: US20220137607A1. Автор: Philip Gröger. Владелец: KLA Corp. Дата публикации: 2022-05-05.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: WO2022093308A1. Автор: Philip Gröger. Владелец: KLA Corporation. Дата публикации: 2022-05-05.

Apparatus for fabricating a semiconductor device and method of fabricating a semiconductor device using the same

Номер патента: US20080057734A1. Автор: Dae Young Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

Method of fabricating a semiconductor device,method of cleaning a crystalline surface of a semiconductor,and semiconductor device

Номер патента: GB9506106D0. Автор: . Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-05-10.

Semiconductor Device Including Trenches and Method of Manufacturing a Semiconductor Device

Номер патента: US20140151789A1. Автор: Hans-Joachim Schulze,Wolfgang Wagner,Francisco Javier Santos Rodriguez,Yvonne Gawlina,Hans Peter Felsl,Andre Rainer Stegner,Maria Cotorogea,Georg Seibert. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-06-05.

Method of making a semiconductor device having a gate electrode with an hourglass shape

Номер патента: US7091094B2. Автор: Jeong-Hwan Son,Hyeong-Mo Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-08-15.

Method of manufacturing a semiconductor device and recording medium

Номер патента: US20160284552A1. Автор: Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-09-29.

Method of Manufacturing a Semiconductor Device

Номер патента: US20130309831A1. Автор: Da YANG,Huilong Zhu,Haizhou Yin,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-11-21.

Semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same

Номер патента: US20170162697A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-06-08.

Method of fabricating a semiconductor device with reduced oxide film variation

Номер патента: US7947567B2. Автор: Masanori Terahara,Junji Oh. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-05-24.

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Номер патента: US9837506B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-12-05.

Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereon

Номер патента: US20030100184A1. Автор: Hsiao-Che Wu. Владелец: Individual. Дата публикации: 2003-05-29.

Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby

Номер патента: EP1027725A2. Автор: Jun Zeng,Carl Franklin Wheatley. Владелец: HARRIS CORP. Дата публикации: 2000-08-16.

Method of decomposing layout of semiconductor device for quadruple patterning technology process and method of manufacturing semiconductor device using the same

Номер патента: US20160070848A1. Автор: Dong-Gyun Kim,Ji-Young JUNG,Dae-Kwon Kang,Jae-Seok Yang,Sung-Wook Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-03-10.

Method of manufacturing a semiconductor device using a halo implantation

Номер патента: EP1234335B1. Автор: Zoran Krivokapic,Brian Swanson,Ahmad Ghaemmaghami. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-11-15.

Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device

Номер патента: US20140042593A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-02-13.

Super-Junction Semiconductor Device Comprising Junction Termination Extension Structure and Method of Manufacturing

Номер патента: US20160322490A1. Автор: Hans Weber,Franz Hirler,Andreas Voerckel,Daniel Tutuc. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-03.

Method of forming a semiconductor device structure

Номер патента: US20210111021A1. Автор: Luc Haspeslagh,Robert Langer,Vasyl Motsnyi,Philippe Soussan,Bernardette Kunert,Stefano Guerrieri,Olga SYSHCHYK. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2021-04-15.

Method of making a semiconductor device

Номер патента: RU2606248C2. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2017-01-10.

Method of manufacturing a semiconductor device

Номер патента: US9082699B2. Автор: Nobuyuki SUZUKI,Satoshi Suzuki,Keiichi Sasaki,Masanobu Ohmura,Tomohiro Migita,Takatoshi Nakahara. Владелец: Canon Inc. Дата публикации: 2015-07-14.

Chuck assembly, semiconductor device fabricating apparatus including the same, and method of fabricating semiconductor device

Номер патента: US20220223452A1. Автор: Taemin EARMME,Seungchul Han,Youngjae Son,Guesuk Lee,Hyeongyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-14.

Method of manufacturing a semiconductor device, in which a high-breakdown-voltage mos transistor and a low-breakdown-voltage mos transistor are formed on an identical semiconductor substrate and semiconductor device manufactured thereby

Номер патента: US6916714B2. Автор: Atsushi Kanda,Yasushi Haga. Владелец: Seiko Epson Corp. Дата публикации: 2005-07-12.

Method of Manufacturing a Semiconductor Device by Plasma Doping

Номер патента: US20170062587A1. Автор: Hans-Joachim Schulze,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-03-02.

Method of making a semiconductor device including an all around gate

Номер патента: US20140357036A1. Автор: Huiming Bu,Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2014-12-04.

Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures

Номер патента: US20140227863A1. Автор: Stefan Uhlenbrock,Eugene P. Marsh,Timothy A. Quick. Владелец: Micron Technology Inc. Дата публикации: 2014-08-14.

Method of manufacturing a semiconductor device having a trench surrounding plural unit cells

Номер патента: US20080274599A1. Автор: Kenya Kobayashi. Владелец: NEC Electronics Corp. Дата публикации: 2008-11-06.

Method of Implantation for Semiconductor Device

Номер патента: US20220123111A1. Автор: Yee-Chia Yeo,Chun-Feng Nieh,Huicheng Chang,Che-Fu Chiu,Bau-Ming Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-21.

Method of manufacturing nitride semiconductor device

Номер патента: US20130143373A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-06-06.

Method of severing a semiconductor device composite

Номер патента: US20160133520A1. Автор: Guido Weiss,Albert Perchtaler. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-05-12.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20240186368A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-06.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20230084276A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Method of forming a semiconductor device

Номер патента: US20110294235A1. Автор: Takuro Maede. Владелец: Elpida Memory Inc. Дата публикации: 2011-12-01.

Two-dimensional material structure, semiconductor device including the two-dimensional material structure, and method of manufacturing the semiconductor device

Номер патента: US20230112883A1. Автор: Minsu Seol,Keunwook SHIN,Changseok Lee,JunYoung KWON,Minseok YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-13.

Method of manufacturing a semiconductor device having different kinds of insulating films with different thicknesses

Номер патента: US8435861B2. Автор: Junichi Ariyoshi,Kazutaka Yoshizawa. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-05-07.

Semiconductor devices having a multi-oxide semiconductor channel layer and methods of manufacturing the semiconductor devices

Номер патента: US20230127755A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Method of Manufacturing a Semiconductor Device Having a Rear-Side Insert Structure

Номер патента: US20160300719A1. Автор: Anton Mauder,Hans-Joachim Schulze,Johannes Georg Laven,Erich Griebl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-10-13.

Holder for a semiconductor substrate, and method of manufacturing a semiconductor device using such a holder

Номер патента: US20010040329A1. Автор: Johannes H. Tyveleijn. Владелец: US Philips Corp. Дата публикации: 2001-11-15.

Semiconductor device structure having dislocation stress memorization and methods of forming the same

Номер патента: US12107163B2. Автор: Tsai-Jung Ho,Tze-Liang Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170317097A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-02.

Method of Manufacturing a Semiconductor Device Having a Trench at Least Partially Filled with a Conductive Material in a Semiconductor Substrate

Номер патента: US20170148887A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-05-25.

Method of making a semiconductor device using multiple layer sets

Номер патента: US20140167227A1. Автор: Bi-Ming Yen,Tsai-Chun Li,Chun-Ming Hu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-06-19.

Method of manufacturing a semiconductor device having a trench isolation structure

Номер патента: US6455381B1. Автор: Masahiro Shimizu,Yoshitaka Fujiishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-09-24.

Method of Manufacturing a Semiconductor Device Including an Edge Area

Номер патента: US20140302667A1. Автор: Anton Mauder,Hans-Joachim Schulze,Franz Hirler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-10-09.

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same

Номер патента: US20150048428A1. Автор: Szu-Lin Cheng,Isaac Lauer,Jack Oon Chu,Jeng-Bang Yau. Владелец: International Business Machines Corp. Дата публикации: 2015-02-19.

Method of forming a semiconductor device

Номер патента: US12040218B2. Автор: Frederick Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2024-07-16.

Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device

Номер патента: US6987310B2. Автор: Moon-han Park,Ho Lee,Seung-Hwan Lee,Hwa-Sung Rhee,Jae-Yoon Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-01-17.

Method of manufacturing a semiconductor device

Номер патента: US6461796B1. Автор: Tatsuya Kunikiyo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-08.

Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device

Номер патента: US8349078B2. Автор: Makoto Kiyama,Hiromu Shiomi,Seiji Nakahata,Akihiro Hachigo,Yu Saitoh,Kazuhide Sumiyoshi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-08.

Semiconductor devices having a trench isolation layer and methods of fabricating the same

Номер патента: US8823131B2. Автор: Tai Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2014-09-02.

Method of manufacturing the semiconductor device

Номер патента: US20040058530A1. Автор: Masaaki Ikegami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2004-03-25.

Method of making a semiconductor device

Номер патента: US20020064950A1. Автор: Toshio Nagata. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-05-30.

Semiconductor devices having a trench isolation layer and methods of fabricating the same

Номер патента: US20140332921A1. Автор: Tai Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2014-11-13.

Method of forming a semiconductor device

Номер патента: US09923092B2. Автор: Thierry Coffi Herve Yao,Moshe Agam. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-03-20.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US20120015510A1. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-19.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US20110275204A1. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-11-10.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US7981782B2. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-07-19.

Method of forming a semiconductor device

Номер патента: US20170069550A1. Автор: Ran Yan,Pei-Yu Chou,Alban Zaka. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-09.

Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method

Номер патента: US8237224B2. Автор: Ryo Nakamura. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2012-08-07.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170250191A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-31.

Method of manufacturing a semiconductor device

Номер патента: US20070259512A1. Автор: Kentaro Yamada,Masato Takahashi,Yasuhiro Obara,Takeshi Katoh,Yoshio Fukayama,Masaki Sakashita,Tatsuyuki Konagaya,Koichiro Takei. Владелец: Individual. Дата публикации: 2007-11-08.

Semiconductor device with flat protective adhesive sheet and method of manufacturing the same

Номер патента: US20010008300A1. Автор: Shinji Yoshihara,Hiroshi Muto,Kinya Atsumi,Yasuo Souki. Владелец: Ipics Corp. Дата публикации: 2001-07-19.

Nanowire semiconductor device having high-quality epitaxial layer and method of manufacturing the same

Номер патента: US20180277682A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-09-27.

Optoelectronic semiconductor device and manufacturing method of an optoelectronic semiconductor device

Номер патента: WO2023222385A1. Автор: Anna Kasprzak-Zablocka,Tansen Varghese,Martin Hetzl. Владелец: Ams-Osram International Gmbh. Дата публикации: 2023-11-23.

A method of fabricating a semiconductor device

Номер патента: MY151464A. Автор: Lee Hing Wah,Daniel Bien Chia SHENG,Rozina Abdul Rani,Mohd Ismahadi Syono. Владелец: MIMOS BERHAD. Дата публикации: 2014-05-30.

Method of Manufacturing a Semiconductor Device with a Metal-Filled Groove in a Polysilicon Gate Electrode

Номер патента: US20180026130A1. Автор: Ralf Siemieniec,Oliver Blank,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-01-25.

Method of forming a semiconductor device

Номер патента: US20070184601A1. Автор: Bich-Yen Nguyen,Da Zhang. Владелец: Individual. Дата публикации: 2007-08-09.

Method of forming a semiconductor device with a seed layer migration process

Номер патента: US12051754B2. Автор: Kihwan Kim,Youngdae CHO,Sunguk JANG,Sujin JUNG,Junbeom PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

Wide Band Gap Semiconductor Device and a Method for Forming a Wide Band Gap Semiconductor Device

Номер патента: US20190198621A1. Автор: Roland Rupp,Hans-Joachim Schulze,Josef Lutz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-06-27.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

Номер патента: US20220085174A1. Автор: Andre Brockmeier,Francisco Javier Santos Rodriguez,Ronny Kern,Matteo Piccin,Guenter Denifl,Michael KNABL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2022-03-17.

Method of manufacturing a semiconductor device

Номер патента: US20120028455A1. Автор: Ichiro Yamamoto,Eiji Hasegawa,Naomi Fukumaki,Toshihiro Iizuka. Владелец: Renesas Electronics Corp. Дата публикации: 2012-02-02.

Method of manufacturing a semiconductor device

Номер патента: US8440521B2. Автор: Ichiro Yamamoto,Eiji Hasegawa,Naomi Fukumaki,Toshihiro Iizuka. Владелец: Renesas Electronics Corp. Дата публикации: 2013-05-14.

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

Номер патента: US10700168B2. Автор: Roland Rupp,Hans-Joachim Schulze,Josef Lutz. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-30.

Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer

Номер патента: US11756995B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Method of manufacturing a semiconductor device with a bicmos circuit

Номер патента: WO1996030941A3. Автор: Armand Pruijmboom,Ronald Koster,Alexander Cecilia Leona Jansen,Der Wel Willem Van. Владелец: Philips Norden Ab. Дата публикации: 1997-01-09.

Method of fabricating a semiconductor device

Номер патента: US20040253800A1. Автор: Yong-Sun Ko,Sang-Sup Jeong,Jae-Woo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-12-16.

Method of manufacturing a semiconductor device

Номер патента: US20240258174A1. Автор: Ming-Hsi Yeh,Clement Hsingjen Wann,Chih-Hsin Ko,Yu-Ming Lin,Chun Hsiung Tsai,Kuo-Feng Yu,Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Method of manufacturing a semiconductor device

Номер патента: US20160268398A1. Автор: Shinichi Kawamura. Владелец: Japan Display Inc. Дата публикации: 2016-09-15.

Method of manufacturing a semiconductor device

Номер патента: US9620624B2. Автор: Shinichi Kawamura. Владелец: Japan Display Inc. Дата публикации: 2017-04-11.

Method of forming a semiconductor device

Номер патента: US11488829B1. Автор: Kuan-Ying LAI,Chung-Yi Chiu,Chang-Mao Wang,Hsin-Yu Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2022-11-01.

Method of manufacturing a semiconductor device

Номер патента: US6358835B1. Автор: Ryuichi Kanamura. Владелец: Sony Corp. Дата публикации: 2002-03-19.

Methods of manufacturing a semiconductor device

Номер патента: US20120184079A1. Автор: Byeong-Chan Lee,Seung-Hun Lee,Jin-Bum Kim,Kwan-Heum Lee,Sun-Ghil Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-19.

Method of fabricating a semiconductor device having a pre metal dielectric liner

Номер патента: US20070155111A1. Автор: Sung Kyung Jung. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-05.

Methods of Forming a Semiconductor Device Having a Contact Structure

Номер патента: US20110151658A1. Автор: Changhun Lee,Keemoon Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-06-23.

Method of fabricating a semiconductor device

Номер патента: US20180130665A1. Автор: Hyun Park,NaeIn Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-10.

Method of manufacturing a semiconductor device comprising a field effect transistor

Номер патента: WO1999027576A3. Автор: Louis Praamsma. Владелец: Philips Svenska AB. Дата публикации: 1999-09-02.

Method of manufacturing a semiconductor device

Номер патента: IE52979B1. Автор: . Владелец: Philips Nv. Дата публикации: 1988-04-27.

Method of forming a semiconductor device

Номер патента: US20220367192A1. Автор: Kuan-Ying LAI,Chung-Yi Chiu,Chang-Mao Wang,Hsin-Yu Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2022-11-17.

Method of forming a semiconductor device

Номер патента: US20140363939A1. Автор: Masaki Nagata. Владелец: ROHM CO LTD. Дата публикации: 2014-12-11.

Method of selectively transferring semiconductor device

Номер патента: US20240186446A1. Автор: Shih-I Chen,Hao-Min Ku,Fu-Chun Tsai,Hsin-Chih CHIU,You-Hsien Chang. Владелец: Epistar Corp. Дата публикации: 2024-06-06.

Semiconductor device, printing apparatus, and manufacturing method thereof

Номер патента: US20150200273A1. Автор: Nobuyuki SUZUKI,Satoshi Suzuki,Masanobu Ohmura. Владелец: Canon Inc. Дата публикации: 2015-07-16.

Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area

Номер патента: US20160093529A1. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-31.

Method of fabricating a semiconductor device

Номер патента: US20160064234A1. Автор: yu chao Lin,Chao-Cheng Chen,Chih-tang Peng,Shun-Hui YANG,Ryan Chia-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-03.

Methods of fabricating a semiconductor device having a metal gate pattern

Номер патента: US20060270205A1. Автор: Chang-Won Lee,Sung-Man Kim,Sun-pil Youn,Ja-hum Ku,Seong-Jun Heo. Владелец: Individual. Дата публикации: 2006-11-30.

Methods of fabricating a semiconductor device having a metal gate pattern

Номер патента: US7306996B2. Автор: Chang-Won Lee,Sung-Man Kim,Sun-pil Youn,Ja-hum Ku,Seong-Jun Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-11.

Method of manufacturing a semiconductor device having a cell field portion and a contact area

Номер патента: US9852945B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-12-26.

Semiconductor devices with fin-shaped active regions and methods of fabricating same

Номер патента: US11482523B2. Автор: Jae Hun Jeong,Yoon Seok Lee,Jong Ki JUNG,Chan Geun Ahn,Soo Hun Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-25.

Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

Номер патента: US20040092090A1. Автор: Eun-Jung Yun,Kong-Soo Lee,Yong-woo Hyung,Jae-jong Han,Seung-Mok Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-05-13.

Methods of forming a semiconductor device

Номер патента: US20080227258A1. Автор: Keon-Soo Kim,Jae-Hwang Sim,Jae-Kwan Park,Sang-Yong Park,Sung-Hyun KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-09-18.

Underlayer composition and method of manufacturing a semiconductor device

Номер патента: US12099301B2. Автор: Chien-Chih Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Underlayer composition and method of manufacturing a semiconductor device

Номер патента: US20240369932A1. Автор: Chien-Chih Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of manufacturing a semiconductor device

Номер патента: US20050250326A1. Автор: Tomoko Matsuda. Владелец: NEC Electronics Corp. Дата публикации: 2005-11-10.

Method of manufacturing a semiconductor device for reducing resistance of a CoSi2 layer

Номер патента: US20040209450A1. Автор: Cheng-Shun Chen,Wan-Yi Liu. Владелец: Macronix International Co Ltd. Дата публикации: 2004-10-21.

Method of manufacturing a semiconductor device

Номер патента: US20060134865A1. Автор: Tsukasa Doi,Hiroyuki Inuzuka,Kazumasa Mitsumune. Владелец: Sharp Corp. Дата публикации: 2006-06-22.

Method of forming a semiconductor device comprising at least one germanium nanowire

Номер патента: US10714595B2. Автор: Liesbeth Witters,Kurt Wostyn. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-07-14.

Method of manufacturing a semiconductor device

Номер патента: EP1275137A1. Автор: Antonius M. P. J. Hendriks,Margriet L. Diekema. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-01-15.

Method of manufacturing a semiconductor device

Номер патента: US20180190656A1. Автор: Chun-Yuan Wu,Yu-Chieh Lin,Shih-Fang Tzou,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-07-05.

Method of producing a semiconductor device

Номер патента: US20020009888A1. Автор: Akira Mizumura. Владелец: Sony Corp. Дата публикации: 2002-01-24.

Method of manufacturing a semiconductor device

Номер патента: US20020019089A1. Автор: Masahiro Shimizu,Takashi Miyajima,Toshinori Morihara. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Method of producing a semiconductor device including treatment with dilute hydrofluoric acid

Номер патента: US8951844B2. Автор: Hiroyuki Ogawa,Naomi Yanai,Yuka Kase. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2015-02-10.

Method of manufacturing a semiconductor device

Номер патента: US20160336431A1. Автор: Ssu-Ting Wang,Te-Yuan Yin,Wen-Chung Yang. Владелец: Powerchip Technology Corp. Дата публикации: 2016-11-17.

Methods of fabricating a semiconductor device

Номер патента: US20170345679A1. Автор: Sangjin Kim,TaeYong KWON,Yunkyeong JANG,Donghoon HWANG,Sebeom OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-30.

Method of manufacturing a semiconductor device

Номер патента: US7592260B2. Автор: Min Chul Gil. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-09-22.

Method of manufacturing a semiconductor device, pattern correction apparatus, and computer-readable recording medium

Номер патента: US20080241972A1. Автор: Tomohiko Yamamoto. Владелец: Fujitsu Ltd. Дата публикации: 2008-10-02.

Method of fabricating a semiconductor device

Номер патента: US20130034960A1. Автор: HAIYANG Zhang,Dongjiang Wang,Minda Hu. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2013-02-07.

Method of manufacturing a semiconductor device

Номер патента: US11145733B1. Автор: Chia-Jung Hsu,Chih-Kai Hsu,Ssu-I Fu,Chun-Ya Chiu,Chin-Hung Chen,Yu-Hsiang Lin,Po-Wen Su,Chung-Fu Chang,Chun-Tsen Lu,Guang-Yu Lo. Владелец: United Microelectronics Corp. Дата публикации: 2021-10-12.

Method of Manufacturing a Semiconductor Device

Номер патента: US20080057735A1. Автор: Min Chul Gil. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-03-06.

Method of manufacturing a semiconductor device with a contact hole

Номер патента: US20020182854A1. Автор: Junichi Miyano,Kiyohiko Toshikawa,Yoshikazu Motoyama. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-12-05.

Method of fabricating a semiconductor device

Номер патента: US20080076213A1. Автор: Chun-Chieh Chang,Tzung-Yu Hung,Chao-Ching Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2008-03-27.

Method of Manufacturing a Semiconductor Device

Номер патента: US20080020567A1. Автор: Byung-hee Kim,Dae-Yong Kim,Eun-ji Jung,Hyun-Su Kim,Jong-Ho Yun,Eun-Ok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Method of manufacturing a semiconductor device

Номер патента: US20240249941A1. Автор: Ching-Yu Chang,Wei-Han Lai,Jing Hong Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Methods of fabricating a semiconductor device having low contact resistance

Номер патента: US20120208335A1. Автор: Ho Jin Cho,Yong Soo Joung,Kyong Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-08-16.

Method of manufacturing semiconductor device, manufacturing program, and manufacturing apparatus

Номер патента: US8691628B2. Автор: Atsushi Yoshimura,Yasuo Tane,Yukio KATAMURA,Fumihiro Iwami. Владелец: Toshiba Corp. Дата публикации: 2014-04-08.

Semiconductor device, display apparatus, and manufacturing method of the semiconductor device

Номер патента: US20240213335A1. Автор: Takashi Shiraishi,Kenichi Okazaki,Yasutaka Nakazawa,Yasuharu Hosaka,Rai Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-06-27.

Semiconductor devices having self-aligned contact pads and methods of manufacturing the same

Номер патента: US20150311276A1. Автор: In-seak Hwang,Young-Kuk Kim,Han-jin Lim,Ki-Vin Im. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-29.

Fabrication method of integrated circuit semiconductor device

Номер патента: US20200395241A1. Автор: Jiyoung Kim,Dongsoo Woo,Joonyoung Choi,Junsoo Kim,Namho Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Method of manufacturing a semiconductor device

Номер патента: US20110318910A1. Автор: Haruo Nakazawa,Motoyoshi KUBOUCHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-12-29.

Method of manufacturing a semiconductor device

Номер патента: US20130178067A1. Автор: Eunsung KIM,Chulho Shin,Han Geun Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

Method of manufacturing a semiconductor device including capping layer, barrier layer and work function layer

Номер патента: US12046657B2. Автор: Hsueh Wen Tsau. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Method of manufacturing a semiconductor device

Номер патента: US11328931B1. Автор: Yi-Jen Chen,Chih-Teng Liao,En-Ping Lin,I-Chung Wang,Yu-Ling Ko,Sheng-Kai Jou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-10.

Method of forming a semiconductor device including trench termination

Номер патента: US9773693B2. Автор: Gordon M. Grivna,Zia Hossain,Ali Salih. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-09-26.

Method of Fabricating a Semiconductor Device

Номер патента: US20150031195A1. Автор: Jihoon Kim,Eun Tae Kim,Jin Ho Oh,Jongmyeong Lee,Heesook Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-01-29.

Methods of fabricating a semiconductor device

Номер патента: US09966262B2. Автор: JaeWoo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-08.

Method of forming a semiconductor device

Номер патента: US09953878B2. Автор: Neng-Kuo Chen,Yu-Lien Huang,Tung Ying Lee,Ming-Huan Tsai,Chun-Hsiang FAN,Pei-Yi Lin,Sheng-Wen Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-24.

Method of forming a semiconductor device

Номер патента: US11776810B2. Автор: Chun-Yen Chang,Yee-Chia Yeo,Chia-Cheng Chen,Chih-Kai Yang,Liang-Yin Chen,Huicheng Chang,Ya Hui Chang,Chun-Hung Wu,Yu-Tien Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-03.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20230145810A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-05-11.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20210376147A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2021-12-02.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20230411519A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-12-21.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US11791409B2. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-10-17.

Semiconductor device including uniform contact plugs and a method of manufacturing the same

Номер патента: US20100200833A1. Автор: Jung-Hoon Park,Yoon-Jong Song,Jae-Min Shin,Kyu-Rie SIM,Shin-Hee HAN. Владелец: Individual. Дата публикации: 2010-08-12.

Semiconductor device having a double deep well and method of manufacturing same

Номер патента: US20150162198A1. Автор: Hua-Chou Tseng,Chien-Chih Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-06-11.

Method of fabricating a semiconductor device

Номер патента: US20110104865A1. Автор: Hiroyuki Uchiyama. Владелец: Elpida Memory Inc. Дата публикации: 2011-05-05.

Semiconductor device including work function adjusting element, and method of manufacturing the same

Номер патента: US20130280872A1. Автор: Kenzo Manabe. Владелец: Renesas Electronics Corp. Дата публикации: 2013-10-24.

Methods of manufacturing a semiconductor device

Номер патента: US20150227046A1. Автор: Jaeho Kim,Kyoungmi KIM,Jungsik CHOI,Jeong Ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-08-13.

Method of forming a semiconductor device with air gaps for low capacitance interconnects

Номер патента: US20220130723A1. Автор: Kandabara Tapily. Владелец: Tokyo Electron Ltd. Дата публикации: 2022-04-28.

Method of Forming a Semiconductor Device

Номер патента: US20230411156A1. Автор: Chun-Yen Chang,Yee-Chia Yeo,Chia-Cheng Chen,Chih-Kai Yang,Liang-Yin Chen,Huicheng Chang,Ya Hui Chang,Chun-Hung Wu,Yu-Tien Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Method of manufacturing a semiconductor device

Номер патента: US20020127785A1. Автор: Naoto Kusumoto,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-09-12.

Method of manufacturing a semiconductor device

Номер патента: US12135501B2. Автор: Ching-Yu Chang,Chen-Yu Liu,Chi-Ming Yang,Yen-Yu Chen,Tze-Liang Lee,Yi-Chen Kuo,Chih-Cheng Liu,Ming-Hui Weng,Jr-Hung Li,Yahru CHENG,Jia-Lin WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Method of manufacturing a semiconductor device

Номер патента: US09984887B2. Автор: Motomu DEGAI. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-05-29.

Metal oxide semiconductor device having recess and manufacturing method thereof

Номер патента: US20190043985A1. Автор: Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2019-02-07.

Manufacturing method of semiconductor device, method of testing the semiconductor device and wafer holding member

Номер патента: US20230411200A1. Автор: Koji Ogata,Tsuyoshi Kanao. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Method of separating a semiconductor device from a substrate

Номер патента: WO2024052695A1. Автор: Tongtong ZHU,Kunal Kashyap,Jia-liang TU,Kai-Jyun Huang. Владелец: Poro Technologies Ltd. Дата публикации: 2024-03-14.

Method of selectively transferring semiconductor device

Номер патента: US11901478B2. Автор: Shih-I Chen,Hao-Min Ku,Fu-Chun Tsai,Hsin-Chih CHIU,You-Hsien Chang. Владелец: Epistar Corp. Дата публикации: 2024-02-13.

Method of making a semiconductor device having a thermal contact

Номер патента: US20220384296A1. Автор: FENG HAN,Jian Wu,Shuai ZHANG. Владелец: TSMC China Co Ltd. Дата публикации: 2022-12-01.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240047379A1. Автор: Alim Karmous,Norbert Labrenz. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-02-08.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: WO2007148277A3. Автор: Fred Hurx,Johannes Josephus Theo Donkers. Владелец: Johannes Josephus Theo Donkers. Дата публикации: 2008-02-28.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: EP1579488A1. Автор: Marcus J. H. Van Dal,Jacob C. Hooker,Vincent C. Venezia,Charles J. J. Dachs. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2005-09-28.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: EP2038919A2. Автор: Johannes Josephus Theodorus Marinus Donkers,Fred Hurx. Владелец: NXP BV. Дата публикации: 2009-03-25.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: WO2007148277A2. Автор: Johannes Josephus Theodorus Marinus Donkers,Fred Hurx. Владелец: NXP B.V.. Дата публикации: 2007-12-27.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: US7348229B2. Автор: Bartlomiej Jan Pawlak,Raymond James Duffy. Владелец: NXP BV. Дата публикации: 2008-03-25.

Method of manufacturing a semiconductor device

Номер патента: US20150303096A1. Автор: Ming Zhang,Yasuki Yoshihisa. Владелец: Renesas Electronics Corp. Дата публикации: 2015-10-22.

Semiconductor device, method of making a semiconductor device, and processing system

Номер патента: US20200258997A1. Автор: Sanjay Natarajan,Yi-Chiau Huang,Patricia M. Liu,Xuebin Li,Saurabh Chopra,Gaurav Thareja,Abhishek Dube,Andy Lo. Владелец: Applied Materials Inc. Дата публикации: 2020-08-13.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20180047582A1. Автор: Marko Lemke,Carsten Moritz,Alfred Vater. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2018-02-15.

Method of manufacturing a semiconductor device

Номер патента: US20070184634A1. Автор: Shinya Suzuki,Masatoshi Iwasaki,Toshiaki Sawada. Владелец: Renesas Technology Corp. Дата публикации: 2007-08-09.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: EP1728270A1. Автор: Bartlomiej J. Pawlak. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-12-06.

Method of manufacturing a semiconductor device

Номер патента: US20130244385A1. Автор: Naoto Saitoh. Владелец: Seiko Instruments Inc. Дата публикации: 2013-09-19.

Method of Fabricating a Semiconductor Device

Номер патента: US20090075462A1. Автор: Rolf Weis,Dirk Manger,Christoph Noelscher. Владелец: Qimonda AG. Дата публикации: 2009-03-19.

Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same

Номер патента: US20150284603A1. Автор: Atsushi Nakamura,Kazuhiro Fujimaki,Ichiro Koyama,Yu Iwai. Владелец: Fujifilm Corp. Дата публикации: 2015-10-08.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210074840A1. Автор: Che-Cheng Chang,Chih-Han Lin,Chang-Yin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-11.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230411215A1. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Tatwan Semiconductor Manufacturing Comany Ltd. Дата публикации: 2023-12-21.

Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

Номер патента: US11961865B2. Автор: Kosuke Nakanishi,Hideaki Togashi. Владелец: Sony Group Corp. Дата публикации: 2024-04-16.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method

Номер патента: EP1880415A1. Автор: Jan Sonsky,Philippe Meunier-Beillard. Владелец: NXP BV. Дата публикации: 2008-01-23.

Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same

Номер патента: US20160075922A1. Автор: Atsushi Nakamura,Kazuhiro Fujimaki,Ichiro Koyama,Yu Iwai. Владелец: Fujifilm Corp. Дата публикации: 2016-03-17.

Optical semiconductor device and method of assembling optical semiconductor device

Номер патента: US20210098523A1. Автор: Kyohei Maekawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2021-04-01.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: EP1719164A1. Автор: Gerben Doornbos,Marcus J. H. Van Dal,Radu C. Surdeanu. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-11-08.

Semiconductor device including a field effect transistor and method of fabricating the same

Номер патента: US12027523B2. Автор: Minju Kim,Junggil YANG,Inhyun SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Номер патента: US10134583B2. Автор: Sang Ick Lee,Younjoung CHO,Myong Woon Kim,Sang Yong Jeon,Jungsik CHOI,Sunhye HWANG,In Kyung JUNG,Wonwoong Chung. Владелец: DNF Co Ltd. Дата публикации: 2018-11-20.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Номер патента: US20170207083A1. Автор: Younjoung CHO,Myong Woon Kim,Sang Yong Jeon,Jungsik CHOI,Sunhye HWANG,Sang lck Lee,In Kyung JUNG,Wonwoong Chung. Владелец: DNF Co Ltd. Дата публикации: 2017-07-20.

Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing

Номер патента: US20070298596A1. Автор: Keum-Joo Lee,Kyoung-Chul Kim,Byoung-Yong Gwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-27.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11367784B2. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-21.

Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method

Номер патента: CA1216969A. Автор: Johannes A. Appels,Henricus G.R. Maas. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1987-01-20.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200006154A1. Автор: I-Sheng Chen,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-02.

Semiconductor device and method of manufacture

Номер патента: WO2019020869A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2019-01-31.

Semiconductor device and a method of making a semiconductor device

Номер патента: US10153365B2. Автор: Philip Rutter,Steven Thomas Peake,Chris Rogers. Владелец: Nexperia BV. Дата публикации: 2018-12-11.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20240055526A1. Автор: Chao-Cheng Chen,Yu-Chi Lin,Yu-Ting WENG,Chiung Wen Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: EP1593155A1. Автор: Robert Lander,Dirk M. Knotter. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2005-11-09.

Semiconductor device and a method of making a semiconductor device

Номер патента: US20170077291A1. Автор: Philip Rutter,Steven Thomas Peake,Chris Rogers. Владелец: Nexperia BV. Дата публикации: 2017-03-16.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US20230253471A1. Автор: Tsuyoshi Tachi. Владелец: ROHM CO LTD. Дата публикации: 2023-08-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12021144B2. Автор: Wei-Fan Lee,Wen-Hsien TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

A semiconductor device and method of fabricating a semiconductor device

Номер патента: EP1808885A1. Автор: Dale C. Jacobson,Wade A. Krull. Владелец: Semequip Inc. Дата публикации: 2007-07-18.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20080200020A1. Автор: Dale C. Jacobson,Wade A. Krull. Владелец: Semequip Inc. Дата публикации: 2008-08-21.

Method of manufacturing a semiconductor device

Номер патента: US5405803A. Автор: Takahisa Kusaka. Владелец: Sony Corp. Дата публикации: 1995-04-11.

Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface

Номер патента: US5948161A. Автор: Hirotaka Kizuki. Владелец: Mitsubishi Electric Corp. Дата публикации: 1999-09-07.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11942552B2. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Method of manufacturing a semiconductor device including a plurality of channel patterns

Номер патента: US11069580B2. Автор: Songse YI,Naery YU,Sumin KIM,Jeongho MUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-20.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20210013039A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2021-01-14.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: WO2019159680A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO. Дата публикации: 2019-08-22.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US11501971B2. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2022-11-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11855211B2. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Manufacturing method of high-voltage semiconductor device with increased breakdown voltage

Номер патента: US11769794B2. Автор: Chao Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-26.

Method of Manufacturing a Semiconductor Device and Semiconductor Device

Номер патента: US20160093731A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-03-31.

Method of Manufacturing a Semiconductor Device and Semiconductor Device

Номер патента: US20210013320A1. Автор: Hans-Joachim Schulze,Helmut Strack,Jens Peter Konrath,Andre Rainer Stegner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-01-14.

Method of manufacturing a semiconductor device and substrate carrier structure

Номер патента: US20110183496A1. Автор: Yuichi Kaneko. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-07-28.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240088294A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230087935A1. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-23.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20200388502A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Semiconductor device and method of fabricating the semiconductor device

Номер патента: US20130256690A1. Автор: Keiji Watanabe,Masayuki Takeda,Norikazu Nakamura,Kenji Imanishi,Toshihide Kikkawa,Masahito Kanamura,Toyoo Miyajima,Toshihiro Ohki,Shirou Ozaki. Владелец: Fujitsu Ltd. Дата публикации: 2013-10-03.

Semiconductor device and method of making a semiconductor device

Номер патента: EP4080583A1. Автор: Kejun Xia,Saumitra Raj Mehrotra. Владелец: NXP USA Inc. Дата публикации: 2022-10-26.

Method of manufacturing a semiconductor device including a plurality of channel patterns

Номер патента: US20210013110A1. Автор: Songse YI,Naery YU,Sumin KIM,Jeongho MUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-14.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20220181161A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-09.

Epitaxial structure of semiconductor device, device and method of manufacturing epitaxial structure

Номер патента: US20240021671A1. Автор: HUI Zhang,Wenlong Zhou,Shiqiang Li,Kewei Tan,Susu KONG,Xiaoqing Du. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-01-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220059703A1. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-24.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US8798110B2. Автор: Tatsuya Takeuchi,Taro Hasegawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2014-08-05.

Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates

Номер патента: US9287404B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-15.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US11869963B2. Автор: John Twynam,Albert Birner,Helmut Brech. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-09.

Method of Forming a Semiconductor Device and Semiconductor Device

Номер патента: US20170133465A1. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch,Johannes Baumgartl,Ingo Muri,Iris Moder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-11.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230369464A1. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230377984A1. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11823957B2. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20210126090A1. Автор: Kyu Hyun Lee,Yoo Sang Hwang,Woo Young Choi,Sang-Il Han,Hui-jung Kim,Kyu Jin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-29.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20110204417A1. Автор: Ken Sato. Владелец: Sanken Electric Co Ltd. Дата публикации: 2011-08-25.

Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method

Номер патента: US4052269A. Автор: Jacques Michel,Michel Iost. Владелец: US Philips Corp. Дата публикации: 1977-10-04.

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

Номер патента: EP1538243A4. Автор: Satoshi Kamiyama,Hiroyuki Matsunami,Hiroyuki Kinoshita,Isamu Akasaki,Hiroshi Amano,Shigeki Otani,Jun Suda. Владелец: Kyocera Corp. Дата публикации: 2008-04-02.

Method of forming a semiconductor device and structure therefor

Номер патента: US20160126236A1. Автор: Thomas Keena,David M. Heminger. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-05-05.

Methods of forming a semiconductor device and related semiconductor devices

Номер патента: US20200211981A1. Автор: Adam L. Olson,John D. Hopkins,Jeslin J. Wu,Rohit Kothari. Владелец: Micron Technology Inc. Дата публикации: 2020-07-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200043802A1. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20220102374A1. Автор: Dong Hun Lee,Jung Shik JANG,Mi Seong PARK. Владелец: SK hynix Inc. Дата публикации: 2022-03-31.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US12010844B2. Автор: Dong Hun Lee,In Su Park,Jung Dal Choi,Jung Shik JANG,Mi Seong PARK. Владелец: SK hynix Inc. Дата публикации: 2024-06-11.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US9147579B2. Автор: Reiko Hiruta. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-09-29.

Method of manufacturing a semiconductor device with capacitor electrodes

Номер патента: US6890817B2. Автор: Takashi Uehara,Hiroshi Maeda,Toshiyuki Oashi. Владелец: Renesas Technology Corp. Дата публикации: 2005-05-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11901442B2. Автор: Lun-Kuang Tan,Yi-Cheng Li,De-Wei YU,Cheng-Po CHAU,Zheng-Yang Pan,Ya-Wen Chiu,Yi Che Chan,Hung-Yao Chen,Pin-Chu Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230378357A1. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

A semiconductor device and a method of manufacturing a semiconductor device

Номер патента: EP4276912A1. Автор: Steven Peake,MD Imran Siddiqui. Владелец: Nexperia BV. Дата публикации: 2023-11-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11817500B2. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

Methods of forming a semiconductor device with a gate structure having a dielectric protection layer

Номер патента: US11749753B2. Автор: Ming-Hsi Yeh,Jian-Jou LIAN,Chun-Neng LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Method of manufacturing a semiconductor device and semiconductor wafer

Номер патента: US11881406B2. Автор: Roland Rupp,Hans-Joachim Schulze,Francisco Javier Santos Rodriguez. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-23.

Method of manufacturing a semiconductor device

Номер патента: US20060211214A1. Автор: Takeshi Nagao. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-09-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240145581A1. Автор: Lun-Kuang Tan,Yi-Cheng Li,De-Wei YU,Cheng-Po CHAU,Zheng-Yang Pan,Ya-Wen Chiu,Yi Che Chan,Hung-Yao Chen,Pin-Chu Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width

Номер патента: US11784257B2. Автор: Bernhard Sell. Владелец: Intel Corp. Дата публикации: 2023-10-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210313454A1. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-07.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11757023B2. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20170069748A1. Автор: Takeshi Shibata. Владелец: Toshiba Corp. Дата публикации: 2017-03-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210408286A1. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-30.

Method of manufacturing a semiconductor device having a channel extending vertically

Номер патента: US7910435B2. Автор: Hyoung-Seub Rhie. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-03-22.

Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width

Номер патента: US12015087B2. Автор: Bernhard Sell. Владелец: Intel Corp. Дата публикации: 2024-06-18.

Manufacturing method of high voltage semiconductor device

Номер патента: US20230335637A1. Автор: Tsung-Yu Yang,Shin-Hung Li,Chang-Po Hsiung,Nien-Chung Li. Владелец: United Microelectronics Corp. Дата публикации: 2023-10-19.

Semiconductor device having aluminum contacts or vias and method of manufacture therefor

Номер патента: US5913146A. Автор: Sailesh M. Merchant,Binh Nguyenphu. Владелец: Lucent Technologies Inc. Дата публикации: 1999-06-15.

Method of fabricating a semiconductor device using masked deposition

Номер патента: WO2024039396A1. Автор: Pasi KOSTAMO,Flavio Griggio,David Johannes VAN WOERKOM,Naganivetha Thiyagarajah,Maren Elisabeth KLOSTER,Shivendra UPADHYAY. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2024-02-22.

Semiconductor Device with Cut Metal Gate and Method of Manufacture

Номер патента: US20230253263A1. Автор: Yi-Chun Chen,Ryan Chia-Jen Chen,Shu-Yuan Ku,Ya-Yi Tsai,I-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

Method of manufacturing a semiconductor device

Номер патента: US20230317456A1. Автор: Hans-Joachim Schulze,Moriz Jelinek,Werner Schustereder,Francisco Javier Santos Rodriguez,Daniel Schlögl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-10-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200135897A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210265490A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230361202A1. Автор: Georgios Vellianitis,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen,Marcus Johannes Henricus. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220359746A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220013662A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-13.

Semiconductor devices with a thermally conductive layer and methods of their fabrication

Номер патента: US20150294921A1. Автор: Lakshminarayan Viswanathan,Bruce M. Green,Darrell G. Hill,L. M. Mahalingam. Владелец: Individual. Дата публикации: 2015-10-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230387306A1. Автор: Martin Christopher Holland,Mark Van Dal,Gerben Doornbos,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Номер патента: US20140048123A1. Автор: Gregory N. Nielson,Anna Tauke-Pedretti,Jose Luis Cruz-Campa,Jeffrey G. Cederberg. Владелец: Sandia Corp. Дата публикации: 2014-02-20.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11830947B2. Автор: Martin Christopher Holland,Mark Van Dal,Gerben Doornbos,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Method of manufacturing a semiconductor device and substrate processing apparatus

Номер патента: US20120009764A1. Автор: Atsushi Moriya,Takaaki Noda,Kiyohiko Maeda,Kiyohisa Ishibashi. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-01-12.

Method of manufacturing a semiconductor device

Номер патента: US8962428B2. Автор: Lele CHEN. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2015-02-24.

Strained semiconductor devices and methods of fabricating strained semiconductor devices

Номер патента: US20120112284A1. Автор: Jed H. Rankin,Brent A. Anderson,Edward J. Nowak. Владелец: International Business Machines Corp. Дата публикации: 2012-05-10.

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device

Номер патента: US20150115287A1. Автор: Takashi Tsuji,Kenji Fukuda,Noriyuki Iwamuro. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-04-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11764289B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240170339A1. Автор: Chih-Yuan Ting,Huan-Just Lin,Wen-Kuo HSIEH,Te-Chih Hsiung,Yang-Cheng WU,Yun-Hua Chen,Yi-Hsuan Chiu,Bing-Sian WU,Sheng-Hsun Fu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Method of manufacturing a semiconductor device

Номер патента: EP1579488B1. Автор: Marcus J. H. Van Dal,Jacob C. Hooker,Vincent C. Venezia,Charles J. J. Dachs. Владелец: NXP BV. Дата публикации: 2011-12-07.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11984324B2. Автор: Yu-chen Wei,Feng-Inn Wu,Tzi-Yi Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same

Номер патента: US20150184033A1. Автор: Kazuhiro Fujimaki,Ichiro Koyama,Yu Iwai. Владелец: Fujifilm Corp. Дата публикации: 2015-07-02.

Semiconductor device with cut metal gate and method of manufacture

Номер патента: US20210249313A1. Автор: Yi-Chun Chen,Ryan Chia-Jen Chen,Shu-Yuan Ku,Ya-Yi Tsai,I-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-12.

Manufacturing method and support of semiconductor device

Номер патента: US20210280416A1. Автор: Tatsuo Migita. Владелец: Kioxia Corp. Дата публикации: 2021-09-09.

Semiconductor Device with a Guard Structure and Corresponding Methods of Manufacture

Номер патента: US20180197982A1. Автор: Adrian Finney,Dietmar Kotz,Thomas Ostermann,Radu Eugen Cazimirovici. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-07-12.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20200058762A1. Автор: Shih-Chi Fu,Chi-Kang Chang,Kuei-Shun Chen,Chien-Ping HUNG,Chi-Wen Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-20.

Method of forming a semiconductor device and structure thereof

Номер патента: WO2006023026A2. Автор: Omar Zia,Sinan Goktepeli,Byoung W. Min,Nigel G. Cave,Venkat R. Kolagunta. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2006-03-02.

Method of forming a semiconductor device and structure thereof

Номер патента: EP1774580A2. Автор: Omar Zia,Sinan Goktepeli,Byoung W. Min,Nigel G. Cave,Venkat R. Kolagunta. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2007-04-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12027594B2. Автор: SHEN Wang,Shiang-Bau Wang,Che-Fu Chen,Hsu Ming Hsiao,Hong Pin Lin,Kung Shu HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240203750A1. Автор: Yu-chen Wei,Feng-Inn Wu,Tzi-Yi Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Номер патента: CA1216966A. Автор: Pieter J.W. Jochems. Владелец: Pieter J.W. Jochems. Дата публикации: 1987-01-20.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: CA1217116A. Автор: Jan Bloem,Wilhelmus A.P. Claassen. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1987-01-27.

Method of manufacturing a semiconductor device

Номер патента: US5401671A. Автор: Shigeki Komori,Katsuhiro Tsukamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-03-28.

Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls

Номер патента: US9972677B2. Автор: LIN Cheng,Vipindas Pala,Edward Robert Van Brunt,Daniel J. Lichtenwalner. Владелец: Cree Inc. Дата публикации: 2018-05-15.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20240121953A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Method of making a semiconductor device

Номер патента: EP4290583A3. Автор: Alexander Viktorovich Bolotnikov,Peter Almem LOSEE,Yang Sui. Владелец: General Electric Co. Дата публикации: 2023-12-27.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20190214264A1. Автор: Katsumi Suzuki,Shigeyuki Takagi,Yuichi Takeuchi,Masaki Shimomura,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2019-07-11.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11824103B2. Автор: Chih-Teng Liao,Chen-Wei Pan,Jen-Chih Hsueh,Li-Feng CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11889672B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-01-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230378327A1. Автор: Chih-Teng Liao,Chen-Wei Pan,Jen-Chih Hsueh,Li-Feng CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of making a semiconductor device

Номер патента: EP4290583A2. Автор: Alexander Viktorovich Bolotnikov,Peter Almem LOSEE,Yang Sui. Владелец: General Electric Co. Дата публикации: 2023-12-13.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US10763333B2. Автор: Kazuyoshi Tomita,Tetsuo Narita. Владелец: Toyota Central R&D Labs Inc. Дата публикации: 2020-09-01.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20180204905A1. Автор: Shinsuke Harada,Yusuke Kobayashi,Yasuhiko OONISHI,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-07-19.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12002855B2. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US20190305090A1. Автор: Kazuyoshi Tomita,Tetsuo Narita. Владелец: Toyota Central R&D Labs Inc. Дата публикации: 2019-10-03.

Semiconductor device and method of forming the semiconductor device

Номер патента: US20180286862A1. Автор: ChoongHyun Lee,Jingyun Zhang,Hemanth Jagannathan,Chun Wing Yeung,Robin Hsin-Ku CHAO. Владелец: International Business Machines Corp. Дата публикации: 2018-10-04.

Method of manufacturing a semiconductor device

Номер патента: US4870031A. Автор: TADASHI Nishimura,Yasuo Inoue,Shigeru Kusunoki,Kazuyuki Sugahara. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1989-09-26.

Method of manufacturing a semiconductor device

Номер патента: US5766996A. Автор: Toshiyuki Hayakawa,Seiichi Aritome. Владелец: Toshiba Corp. Дата публикации: 1998-06-16.

Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state

Номер патента: US4463492A. Автор: Kenji Maeguchi. Владелец: Tokyo Shibaura Electric Co Ltd. Дата публикации: 1984-08-07.

Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations

Номер патента: US5384279A. Автор: Reinier De Werdt,Andre Stolmeijer,Paulus A. Van Der Plas,Paulus M. T. M. van Attekum,Hubertus Den Blanken. Владелец: US Philips Corp. Дата публикации: 1995-01-24.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20080277722A1. Автор: Joon-Jin Park. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2008-11-13.

Wafer and method of making, and semiconductor device

Номер патента: US20230215815A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240032272A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2024-01-25.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11812602B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-11-07.

Method of forming a semiconductor device structure and such a semiconductor device structure

Номер патента: US20160163815A1. Автор: Ralf Richter,Jan Hoentschel,Stefan Flachowsky,Peter Javorka. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

Method of forming a semiconductor device and structure therefor

Номер патента: US20200266191A1. Автор: Mark Griswold,Amit Paul,Arash Elhami Khorasani. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-08-20.

Method of manufacturing nitride semiconductor device

Номер патента: US20170092493A1. Автор: Tohru Oka,Takahiro Fujii,Masayoshi Kosaki,Takaki Niwa. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-03-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230352550A1. Автор: Chun Chieh Wang,Yueh-Ching Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Method of forming a semiconductor device

Номер патента: US11888024B2. Автор: Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-30.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

Номер патента: US11862476B2. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US20200395244A1. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US11791209B2. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials

Номер патента: US20110217828A1. Автор: Vladimir Urazaev,Jung-Ho Kim,Yong-Hoon Son,Jong-Hyuk Kang,Sung-Woo Hyun,Jin-Ha Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-09-08.

Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

Номер патента: US11968828B2. Автор: Yong-Shiuan Tsair,Meng-Han LIN,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Thin planar semiconductor device having electrodes on both surfaces and method of fabricating same

Номер патента: US20080169550A1. Автор: Yoichiro Kurita. Владелец: NEC Corp. Дата публикации: 2008-07-17.

Method of manufacturing a semiconductor device with multilayered channel structure

Номер патента: US20180151717A1. Автор: Cheng-Hsien Wu,Yu-Lin Yang,Tsung-Lin Lee,Chih Chieh Yeh,I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-31.

Method of manufacturing a semiconductor device with multilayered channel structure

Номер патента: US20200357914A1. Автор: Cheng-Hsien Wu,Yu-Lin Yang,Tsung-Lin Lee,Chih Chieh Yeh,I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-12.

Method of manufacturing a semiconductor device with multilayered channel structure

Номер патента: US20180350971A1. Автор: Cheng-Hsien Wu,Yu-Lin Yang,Tsung-Lin Lee,Chih Chieh Yeh,I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-06.

Integrated device, semiconductor device, and integrated device manufacturing method

Номер патента: EP4325581A1. Автор: Gaofei TANG,Dongfa OUYANG,Qimeng JIANG,Hanxing WANG,Qilong Bao. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-02-21.

Power semiconductor device and method of manufacturing power semiconductor device

Номер патента: US20230369515A1. Автор: Katsumi Nakamura. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-11-16.

Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures

Номер патента: US20180090594A1. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-29.

Integrated device, semiconductor device, and integrated device manufacturing method

Номер патента: US20240113103A1. Автор: Gaofei TANG,Dongfa OUYANG,Qimeng JIANG,Hanxing WANG,Qilong Bao. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-04-04.

Method of forming a semiconductor device and structure therefor

Номер патента: US20200395478A1. Автор: Peter A. Burke,Dean E. Probst,Prasad Venkatraman. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-12-17.

Component for semiconductor device fabrication apparatus, semiconductor device fabrication apparatus including the same, and method of fabricating semiconductor device

Номер патента: US20240170266A1. Автор: Hyun Soo Lee,Ju Young Song,Jong Kyu Lee,Hae Mi KANG,Do Hyun Choi,Il Gu YONG,Ho Geun HAN. Владелец: Solmics Co Ltd. Дата публикации: 2024-05-23.

Method of manufacturing a semiconductor device

Номер патента: US20240006218A1. Автор: Bernhard Goller,Gregor Langer,Matteo Piccin,Nilesha Mishra,Franz-Josef Pichler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-04.

Method of manufacturing a semiconductor device

Номер патента: US20130316523A1. Автор: Nobuyuki SUZUKI,Satoshi Suzuki,Keiichi Sasaki,Masanobu Ohmura,Tomohiro Migita,Takatoshi Nakahara. Владелец: Canon Inc. Дата публикации: 2013-11-28.

Method of manufacturing a semiconductor device

Номер патента: EP4300557A1. Автор: Bernhard Goller,Gregor Langer,Matteo Piccin,Nilesha Mishra,Franz-Josef Pichler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-03.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20210134971A1. Автор: Chung-Ting Ko,Chi-On CHUI,Bi-Fen Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-05-06.

Method of severing a semiconductor device composite

Номер патента: US20140248758A1. Автор: Guido Weiss,Albert Perchtaler. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2014-09-04.

Method of forming a semiconductor device

Номер патента: US20210376068A1. Автор: Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-12-02.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US20230043714A1. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-09.

Semiconductor Device Including Wrap Around Contact and Method of Forming the Semiconductor Device

Номер патента: US20180374958A1. Автор: Michael A. Guillorn,Nicolas Jean Loubet. Владелец: International Business Machines Corp. Дата публикации: 2018-12-27.

Semiconductor devices having stressed active regions therein and methods of forming same

Номер патента: US20190393348A1. Автор: Hoon-Sung CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-26.

Semiconductor devices with various line widths and method of manufacturing the same

Номер патента: US20200058559A1. Автор: Yuri Masuoka,Je-Min YOO,Sang-Deok Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-20.

Semiconductor devices with various line widths and method of manufacturing the same

Номер патента: US20200312720A1. Автор: Yuri Masuoka,Je-Min YOO,Sang-Deok Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-01.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20190115352A1. Автор: Chun-Yuan Wu,Yu-Chieh Lin,Shih-Fang Tzou,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-04-18.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20180108768A1. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2018-04-19.

Method of monitoring a semiconductor device fabrication process and method of fabricating a semiconductor device using the same

Номер патента: US20220068728A1. Автор: Youngjoo Lee,Taekyun KANG,Hyowon Bae,Sang Yoon Han,Jitae PARK,Doo Young Gwak,Aekyung KIM,Kyunggon You,Seongjin IN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-03.

Semiconductor device including graphene and method of manufacturing the semiconductor device

Номер патента: US12027589B2. Автор: Hyeonjin Shin,Seongjun Park,Yunseong LEE,Keunwook SHIN,Seunggeol NAM,Yeonchoo CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Methods of Manufacturing a Semiconductor Device by Forming a Separation Trench

Номер патента: US20170012002A1. Автор: Andreas Meiser,Markus Zundel,Martin Poelzl,Georg Ehrentraut,Paul Ganitzer. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-01-12.

Method of manufacturing a semiconductor device

Номер патента: US5106782A. Автор: Tadashi Matsuno,Hideki Shibata,Kazuhiko Hashimoto,Hisayo Momose. Владелец: Toshiba Corp. Дата публикации: 1992-04-21.

Method of manufacturing a semiconductor device, in which a double layer-consisting of poly si and a silicide-present on a layer of silicon oxide is etched in a plasma

Номер патента: CA1243133A. Автор: Alfred J. Van Roosmalen,Anton P.M. Van Arendonk. Владелец: Anton P.M. Van Arendonk. Дата публикации: 1988-10-11.

Semiconductor devices including self aligned refractory contacts and methods of fabricating the same

Номер патента: CA2651670C. Автор: Adam William Saxler,Scott Sheppard. Владелец: Cree Inc. Дата публикации: 2015-06-30.

Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body

Номер патента: US4725564A. Автор: Cornelis J. A. M. van Dalen. Владелец: US Philips Corp. Дата публикации: 1988-02-16.

Method of fabricating a semiconductor device

Номер патента: US6465295B1. Автор: Kenji Kitamura. Владелец: Seiko Instruments Inc. Дата публикации: 2002-10-15.

Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby

Номер патента: US6602725B2. Автор: Masanobu Iwasaki,Yuichi Sakai,Hiroyuki Chibahara,Kakutaro Suda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-08-05.

Method of fabricating a semiconductor device

Номер патента: CA1179787A. Автор: Shyam P. Murarka,Chuan C. Chang,Dawon Kahng,James A. Cooper, Jr.. Владелец: Western Electric Co Inc. Дата публикации: 1984-12-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230378316A1. Автор: Cheng-Wei Chang,Shahaji B. More,Yueh-Ching Pai,Yi-Ying Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation

Номер патента: US20230317830A1. Автор: Tsung-Lin Lee,Chih Chieh Yeh,Da-Wen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Method of manufacturing a semiconductor device

Номер патента: US20240014063A1. Автор: Kai Cheng,Tsau-Hua Hsieh,Fang-Ying Lin. Владелец: Innolux Corp. Дата публикации: 2024-01-11.

Manufacturing method for crystalline semiconductor film, semiconductor device, and display device

Номер патента: US20130140573A1. Автор: Yoshinobu Nakamura. Владелец: Individual. Дата публикации: 2013-06-06.

Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode

Номер патента: US8569124B2. Автор: Toshiya Sato,Tsutomu Hosoda,Yoshitaka Watanabe,Kenji Nukui,Shinichi Akiyama,Yoichi Fujisawa,Tetsuya Itou,Yuuichi Satou,Mutsumi Katou. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-10-29.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20130330896A1. Автор: Tsuyoshi Ishikawa,Masahiro Sugimoto,Toshimasa Yamamoto,Yukihiko Watanabe,Hidefumi Takaya,Narumasa Soejima,Shinichiro Miyahara. Владелец: Toyota Motor Corp. Дата публикации: 2013-12-12.

Semiconductor devices including scribe lane and method of manufacturing the semiconductor devices

Номер патента: US11756843B2. Автор: Junghoon Han,Junyong NOH,Yeonjin Lee,Minjung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device

Номер патента: US20140209973A1. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Christian Jaeger,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-07-31.

Method of manufacturing a semiconductor device

Номер патента: US20190080964A1. Автор: Hiroyuki Utsunomiya. Владелец: Ablic Inc. Дата публикации: 2019-03-14.

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Номер патента: US20200044036A1. Автор: Oliver Haeberlen,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-02-06.

Semiconductor device having a closed cavity structure and method of manufacturing the same

Номер патента: US9397116B2. Автор: Herb He Huang,Clifford I. Drowley. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-07-19.

Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors

Номер патента: EP2108189A1. Автор: Ramachandran Muralidhar,Rajesh A. Rao. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-10-14.

Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors

Номер патента: WO2008091737A1. Автор: Ramachandran Muralidhar,Rajesh A. Rao. Владелец: Freescale Semiconductor Inc.. Дата публикации: 2008-07-31.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11973124B2. Автор: Cheng-Wei Chang,Shahaji B. More,Yueh-Ching Pai,Yi-Ying Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-30.

Semiconductor device including wrap around contact, and method of forming the semiconductor device

Номер патента: US20180006159A1. Автор: Michael A. Guillorn,Nicolas Jean Loubet. Владелец: International Business Machines Corp. Дата публикации: 2018-01-04.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20190189566A1. Автор: Sang Seon Oh,Joon Dong Kim,Yeong Beom Ko,Hee Sung Kim,Dong Jean Kim. Владелец: Amkor Technology Inc. Дата публикации: 2019-06-20.

Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device

Номер патента: US20150187654A1. Автор: Marko Lemke,Rolf Weis,Stefan Tegen. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2015-07-02.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US11929392B2. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-12.

Semiconductor device structure having dislocation stress memorization and methods of forming the same

Номер патента: US20230064376A1. Автор: Tsai-Jung Ho,Tze-Liang Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Method of manufacturing a semiconductor device

Номер патента: US20230245889A1. Автор: Ching-Yu Chang,Chin-Hsiang Lin,An-Ren Zi. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-03.

Method of manufacturing a semiconductor device by using ion beam technique

Номер патента: US11043384B2. Автор: Hans-Joachim Schulze,Moriz Jelinek,Werner Schustereder,Christian Krueger,Michael Kokot. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-06-22.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20190371739A1. Автор: Sang Seon Oh,Joon Dong Kim,Yeong Beom Ko,Hee Sung Kim,Dong Jean Kim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2019-12-05.

Method of fabricating a semiconductor device

Номер патента: US20090042383A1. Автор: Ki-Hyun Hwang,Jin Gyun Kim,Bon-young Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-12.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11007005B2. Автор: Tung Ying Lee,Yee-Chia Yeo,Ziwei Fang,Meng-Hsuan Hsiao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-05-18.

Semiconductor device and method of manufacturing the same

Номер патента: EP1953813A3. Автор: Kunio Hosoya,Saishi Fujikawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-09-06.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Methods of manufacturing trench semiconductor devices with edge termination structures

Номер патента: US20160276475A1. Автор: Jingjing Chen,Peilin Wang,Edouard deFresart. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-09-22.

Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

Номер патента: US20240266379A1. Автор: Kosuke Nakanishi,Hideaki Togashi. Владелец: Sony Group Corp. Дата публикации: 2024-08-08.

Method of fabricating a semiconductor device

Номер патента: US20110079852A1. Автор: Robert James Pascoe Lander. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-04-07.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20070290240A1. Автор: Noriaki Suzuki,Masanori Nagase. Владелец: Fujifilm Corp. Дата публикации: 2007-12-20.

Method of manufacturing a semiconductor device and liquid crystal display

Номер патента: US20030155571A1. Автор: Ichiro Murai,Masami Hayashi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-08-21.

Vertically mountable semiconductor device and methods

Номер патента: US20020031857A1. Автор: Larry Kinsman. Владелец: Individual. Дата публикации: 2002-03-14.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US12041780B2. Автор: Jeong Sang KANG. Владелец: SK hynix Inc. Дата публикации: 2024-07-16.

Method of fabricating a semiconductor device

Номер патента: US20230276718A1. Автор: Peter KROGSTRUP JEPPESEN,Amrita Singh,Elvedin MEMISEVIC. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2023-08-31.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240243177A1. Автор: Boram Kim,Junhyuk Park,Sunkyu Hwang,Jongseob Kim,Joonyong Kim,Jaejoon Oh,Injun Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Method of manufacturing optical semiconductor device and optical semiconductor device

Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier

Номер патента: US20200251584A1. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2020-08-06.

Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier

Номер патента: US11094813B2. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2021-08-17.

A method of manufacturing a semiconductor device and a semiconductor device

Номер патента: EP4372825A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-22.

Semiconductor device having wide tuning range varactor and method of manufacturing the same

Номер патента: US20230378169A1. Автор: HO-HSIANG Chen,Tzu-Jin Yeh,Ying-Ta Lu,Chi-Hsien Lin,Hsien-Yuan LIAO,Chiao-Han LEE,Hsiu-Wen Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device having compressively strained channel region and method of making same

Номер патента: US10069010B2. Автор: Toshiharu Nagumo. Владелец: Renesas Electronics Corp. Дата публикации: 2018-09-04.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240282639A1. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220319928A1. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20220302267A1. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-22.

Optical semiconductor device and method of fabricating optical semiconductor device

Номер патента: US20060054916A1. Автор: Yoshihiko Hanamaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2006-03-16.

Semiconductor device having magnetic tunnel junction structure and method of fabricating the same

Номер патента: US20180226575A1. Автор: Juhyun Kim,Kiwoong Kim,Sechung Oh,Woochang Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-08-09.

Semiconductor device having magnetic tunnel junction structure and method of fabricating the same

Номер патента: US20170084821A1. Автор: Juhyun Kim,Kiwoong Kim,Sechung Oh,Woochang Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-23.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US20240304674A1. Автор: Kazuki IKEYAMA. Владелец: Mirise Technologies Corp. Дата публикации: 2024-09-12.

Semiconductor device and method of making a semiconductor device

Номер патента: US11817486B2. Автор: Steven Kwan,Jay Paul John,James Albert Kirchgessner. Владелец: NXP USA Inc. Дата публикации: 2023-11-14.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20140160390A1. Автор: Yasuyuki Arai,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-06-12.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240274649A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Yuan-Ching Peng,Ting-Yeh Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor device and method of making a semiconductor device

Номер патента: US09929263B2. Автор: Johannes Josephus Theodorus Marinus Donkers,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2018-03-27.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20140091319A1. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Fujitsu Ltd. Дата публикации: 2014-04-03.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area

Номер патента: US20230262975A1. Автор: Nhan Do,Serguei Jourba,Xian Liu,Leo XING,Zhuoqiang Jia. Владелец: Silicon Storage Technology Inc. Дата публикации: 2023-08-17.

Semiconductor device, power module, and manufacturing method for semiconductor device

Номер патента: EP3832709A1. Автор: Tetsuya Hayashi,Ryota Tanaka,Keiichiro Numakura,Wei Ni,Toshiharu Marui. Владелец: Nissan Motor Co Ltd. Дата публикации: 2021-06-09.

Semiconductor device and methods of manufacturing the semiconductor device

Номер патента: US20240145563A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby

Номер патента: US20020016059A1. Автор: Masakazu Okada,Hiroyuki Chibahara,Keiichi Higashitani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-07.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20080179693A1. Автор: Hyun-Woo CHUNG,Yong-Chul Oh,Jae-Man Yoon,Hui-jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-31.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230378299A1. Автор: Pei-Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using test socket terminals

Номер патента: US9905482B2. Автор: Toshitsugu Ishii,Hidekazu Iwasaki,Jun MATSUHASHI,Naohiro Makihira. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Method of manufacturing a semiconductor device

Номер патента: US20170084665A1. Автор: Byung-Kyu Park,Shawn Michael O'rourke,Frank Caris,Brian Rees. Владелец: dpiX LLC. Дата публикации: 2017-03-23.

Semiconductor Device Structures for Bipolar Junction Transistors and Methods of Fabricating Such Structures

Номер патента: US20080003757A1. Автор: Louis Lu-Chen Hsu,Kangguo Cheng,Jack Allan Mandelman. Владелец: International Business Machines Corp. Дата публикации: 2008-01-03.

Semiconductor device, semiconductor system, and method of controlling the semiconductor device

Номер патента: US20190140131A1. Автор: Tsuyoshi Waki. Владелец: Renesas Electronics Corp. Дата публикации: 2019-05-09.

Method of making a semiconductor device

Номер патента: US6022773A. Автор: Masato Sakao. Владелец: NEC Corp. Дата публикации: 2000-02-08.

Manufacturing method and program of semiconductor device

Номер патента: US20180217203A1. Автор: Tomoaki Tamura,Yoshiyuki Nakamura,Kouichi KUMAKI. Владелец: Renesas Electronics Corp. Дата публикации: 2018-08-02.

Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device

Номер патента: US20230275128A1. Автор: Sangwoo Kim,Taehyeong Kim,Minsu Seol,Kyung-Eun Byun,Minseok SHIN,JunYoung KWON,Jaehwan Jung,Pin Zhao. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-08-31.

Semiconductor device including emitter regions and method of manufacturing the semiconductor device

Номер патента: US12034065B2. Автор: Akihiro HIKASA. Владелец: ROHM CO LTD. Дата публикации: 2024-07-09.

Method of Manufacturing a Semiconductor Device having a Buried Field Plate

Номер патента: US20150214311A1. Автор: Oliver Haeberlen,Gilberto Curatola. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-07-30.

Semiconductor device having ferroelectric or negative capacitor and method of manufacturing the same, and electronic device

Номер патента: US20240306396A1. Автор: Huilong Zhu,Weixing Huang. Владелец: Institute Of Microelectronics Chinese Academy Sciences. Дата публикации: 2024-09-12.

Method of manufacturing organic semiconductor device

Номер патента: US20200176697A1. Автор: Lixuan Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-06-04.

A method of manufacturing a semiconductor device

Номер патента: EP1057218A1. Автор: Pierre H. Woerlee,Andreas H. Montree,Jurriaan Schmitz. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2000-12-06.

A method of manufacturing a semiconductor device

Номер патента: WO2000038237A1. Автор: Pierre H. Woerlee,Andreas H. Montree,Jurriaan Schmitz. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2000-06-29.

cBN semiconductor device having an ohmic electrode and a method of making the same

Номер патента: US5414279A. Автор: Yoshiyuki Suda,Osamu Mishima,Satoshi Agawa,Koh Era. Владелец: National Institute for Research in Inorganic Material. Дата публикации: 1995-05-09.

Semiconductor device with reduced gate-overlap capacitance and method of forming the same

Номер патента: US7791133B2. Автор: Hiroyuki Fujimoto. Владелец: Elpida Memory Inc. Дата публикации: 2010-09-07.

Selectively regrown top contact for vertical semiconductor devices

Номер патента: EP3123520A1. Автор: Gilbert Dewey,Jack T. Kavalieros,Ravi Pillarisetty,Sansaptak DASGUPTA,Han Wui Then,Marko Radosavljevic,Benjamin Chu-Kung,Niloy Mukherjee,Van H. Le. Владелец: Intel Corp. Дата публикации: 2017-02-01.

Semiconductor device with reduced surface field effect and methods of fabrication the same

Номер патента: US20120273891A1. Автор: Michael Andrew Smith. Владелец: Individual. Дата публикации: 2012-11-01.

Method of making cBN semiconductor device having an ohmic electrode

Номер патента: US5444017A. Автор: Yoshiyuki Suda,Osamu Mishima,Satoshi Agawa,Koh Era. Владелец: National Institute for Research in Inorganic Material. Дата публикации: 1995-08-22.

Test system of semiconductor device having a handler remote control and method of operating the same

Номер патента: US20060158211A1. Автор: Eun-Seok Lee,Sung-Ok Kim,Jeong-Ho Bang,Kyeong-Seon Shin,Dae-Gab Chi,Ae-Yong Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-07-20.

Semiconductor structure, preparation method of same, and semiconductor device

Номер патента: US20220238639A1. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

Semiconductor device with high reverse breakdown voltage and method of manufacturing the same

Номер патента: EP1192663A2. Автор: Rob Van Dalen,Godefridus A. M. Hurkx. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-04-03.

Semiconductor device with high reverse breakdown voltage and method of manufacturing the same

Номер патента: WO2001059844A2. Автор: Rob Van Dalen,Godefridus A. M. Hurkx. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2001-08-16.

Semiconductor devices including stacked dies and methods of testing the semiconductor devices

Номер патента: US20200049767A1. Автор: Dong-hun Kang,Myeong-jun Song,Hyoung-Min Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-13.

Method of making a semiconductor device

Номер патента: US11990474B2. Автор: Chi-Feng Huang,Shu Fang Fu,Chia-Chung Chen,Victor Chiang Liang,Fu-Huan TSAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Method of manufacturing a semiconductor device

Номер патента: US6596582B2. Автор: Yoshinori Tanaka,Yoshitaka Fujiishi,Eiji Hasunuma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-07-22.

Semiconductor device including memory cell including thyristor and method of manufacturing the same

Номер патента: US20240276741A1. Автор: Bo Min Park,Seung Wook Ryu. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Method of manufacturing a semiconductor device having an alignment mark

Номер патента: US20050170615A1. Автор: Yasuhiro Doumae. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-08-04.

Method of making a semiconductor device using a dummy gate

Номер патента: US20160104772A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2016-04-14.

Semiconductor device and method for manufacturing a passivation layer on a semiconductor device

Номер патента: WO2001048796A1. Автор: Hans Bernhoff,Olof Hjortstam,Jan Isberg,Erik Johansson,Johan Hammersberg,Mark Irwin. Владелец: ABB AB. Дата публикации: 2001-07-05.

Method of making a semiconductor device using a dummy gate

Номер патента: US20180261674A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2018-09-13.

Semiconductor device lacking steeply rising structures and fabrication method of the same

Номер патента: US20010005029A1. Автор: Kohji Kanamori. Владелец: NEC Corp. Дата публикации: 2001-06-28.

Method of making a semiconductor device using a dummy gate

Номер патента: US20170040427A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-02-09.

Semiconductor device lacking steeply rising structures and fabrication method of the same

Номер патента: US6339242B2. Автор: Kohji Kanamori. Владелец: NEC Corp. Дата публикации: 2002-01-15.

Method of manufacturing a semiconductor device

Номер патента: US20170256630A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2017-09-07.

Method of producing a semiconductor device

Номер патента: US3891481A. Автор: Reinhold Kaiser. Владелец: Telefunken Patentverwertungs GmbH. Дата публикации: 1975-06-24.

Semiconductor devices having enhanced key patterns therein and methods of fabricating same

Номер патента: US20240313049A1. Автор: Byounghoon Kim,Myoungki JUNG,Hyunwoong KIM,Sungsik Park,Jonghwa Baek,Hyunju Song,KyungMin SUH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Semiconductor device with a protective security coating and method of manufacturing the same

Номер патента: EP1490902A1. Автор: Ronald Dekker,Robertus A. M. Wolters,Petra E. De Jongh. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2004-12-29.

Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Номер патента: US9799729B2. Автор: Franz Hirler,Ralf Siemieniec,Martin Henning Vielemeyer,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-24.

Semiconductor device including a body contact region and method of forming the same

Номер патента: US20230352536A1. Автор: Anupam DUTTA,Vvss Satyasuresh Choppalli,Aaron Lee VALLETT. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-11-02.

Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof

Номер патента: WO2006104562A2. Автор: Leo Mathew,Venkat R. Kolagunta,David C. Sing. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2006-10-05.

MOS-Based Power Semiconductor Device Having Increased Current Carrying Area and Method of Fabricating Same

Номер патента: US20240282821A1. Автор: James A. Cooper. Владелец: PURDUE RESEARCH FOUNDATION. Дата публикации: 2024-08-22.

Method of manufacturing a semiconductor device including a silicon pillar

Номер патента: US8158502B2. Автор: Kazuhiro Nojima. Владелец: Elpida Memory Inc. Дата публикации: 2012-04-17.

Method of manufacturing a semiconductor device having a trench capacitor and a logic device

Номер патента: US20240322001A1. Автор: Jong Hyuk OH. Владелец: Sk Keyfoundry Inc. Дата публикации: 2024-09-26.

Semiconductor device having a low-resistance bus interconnect, method of manufacturing same, and display apparatus employing same

Номер патента: US20070087477A1. Автор: Tamaki Toba. Владелец: NEC Corp. Дата публикации: 2007-04-19.

Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer

Номер патента: US20140065784A1. Автор: Jaehong Park,Dongchan Kim,Je-woo Han,Gyungjin Min,Junho Yoon,Yongmoon Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-03-06.

Method of manufacturing a semiconductor device

Номер патента: US20240282582A1. Автор: Ching-Sen Kuo,Feng-Jia Shiu,Chun-Wei Chang,Wei-Chao Chiu,Yong-Jin LIOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Method of producing a semiconductor device having a ferroelectric gate stack

Номер патента: US12107128B2. Автор: Hans-Joachim Schulze,Thomas Aichinger,Saurabh Roy. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-10-01.

Optoelectronic semiconductor device comprising a filling material and method for manufacturing the optoelectronic semiconductor device

Номер патента: WO2024227522A1. Автор: Michael Huber,Helena DOBLINGER,Jochen BRENDT,Peter Deutscher,Joern KAMPMEIER,Thomas FILZ. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-11-07.

Method of fabricating a semiconductor device

Номер патента: US20070254389A1. Автор: Chang-ki Hong,Jeong-Nam Han,Dae-hyuk Kang,Kun-tack Lee,Sung-il Cho,Jung-min Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-11-01.

Optoelectronic semiconductor device comprising an al-containing layer and method of manufacturing the optoelectronic semiconductor device

Номер патента: WO2024184358A1. Автор: Xiaojun Chen,Jong Ho Na,Noor Afifa MOHD HANAFIAH,Muhammad Esmed Alif SAMSUDIN,Azharul Ariff KAMARULZAMAN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-09-12.

Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film

Номер патента: US20130011988A1. Автор: Nobuyuki Sako. Владелец: Elpida Memory Inc. Дата публикации: 2013-01-10.

Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film

Номер патента: US8883601B2. Автор: Nobuyuki Sako. Владелец: PS4 Luxco SARL. Дата публикации: 2014-11-11.

Semiconductor devices with a compositionally graded layer, and methods of making and use thereof

Номер патента: US20240014285A1. Автор: Siddharth Rajan,Sushovan Dhara. Владелец: Ohio State Innovation Foundation. Дата публикации: 2024-01-11.

Semiconductor device with S/D bottom isolation and methods of forming the same

Номер патента: US11854896B2. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device, display apparatus, and manufacturing method of semiconductor device

Номер патента: US20220320346A1. Автор: Atsushi Sasaki. Владелец: Joled Inc. Дата публикации: 2022-10-06.

Semiconductor device with s/d bottom isolation and methods of forming the same

Номер патента: US20240105517A1. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-28.

Semiconductor device, power module and manufacturing method for the semiconductor device

Номер патента: US20230253512A1. Автор: Tetsuya Hayashi,Ryota Tanaka,Keiichiro Numakura,Wei Ni,Toshiharu Marui. Владелец: Nissan Motor Co Ltd. Дата публикации: 2023-08-10.

Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device

Номер патента: US20190249330A1. Автор: Hans-Joachim Schulze,Johannes Freund,Helmut Oefner,Thomas Wuebben. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-08-15.

Method of manufacturing a semiconductor device for attaching to a flexible display

Номер патента: US20210240227A1. Автор: Cheng-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-05.

Method of manufacturing a semiconductor device for attaching to a flexible display

Номер патента: US11619974B2. Автор: Cheng-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-04.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: WO2007057803A1. Автор: Johannes J. T. M. Donkers,Joost Melai,Philippe Meunier-Beillard,Erwin Hijzen. Владелец: NXP B.V.. Дата публикации: 2007-05-24.

Method of manufacturing a semiconductor device and semiconductor device manufactured thereof

Номер патента: EP2053636A3. Автор: Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi,Hidaki Tanaka. Владелец: Nissan Motor Co Ltd. Дата публикации: 2012-06-13.

Methods of fabricating a semiconductor device

Номер патента: US10312086B2. Автор: Kuo-Yao Chou. Владелец: Micron Technology Inc. Дата публикации: 2019-06-04.

Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device

Номер патента: US20110053096A1. Автор: Sang-Yong Yu,Gi-sung Yoon,Sung-Hyuck Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-03-03.

Semiconductor device and method of fabricating the semiconductor device

Номер патента: US20240014218A1. Автор: Takashi Shiraishi,Kenichi Okazaki,Yasutaka Nakazawa,Kiyofumi Ogino,Yasuharu Hosaka,Rai Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-01-11.

Semiconductor device including an n-type carrier stored layer, power conversion device, and method of manufacturing the semiconductor device

Номер патента: US10916631B2. Автор: Kenji Suzuki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-02-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230411478A1. Автор: MING-CHING Chang,Chao-Cheng Chen,Shih-Yao Lin,Chih-Han Lin,Chen-Ping CHEN,Kuei-Yu Kao. Владелец: Mcdermott W&e Llp LLP. Дата публикации: 2023-12-21.

Semiconductor device and method of forming a semiconductor device

Номер патента: EP2067164A1. Автор: Philippe Lance,Yann Weber,Evgueniy Stefanov,Jean-Michel Reynes. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-06-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20170077280A1. Автор: Chisato Furukawa. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190131448A1. Автор: Yoshinori Yoshida,Tsuyoshi Kachi. Владелец: Renesas Electronics Corp. Дата публикации: 2019-05-02.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20090057831A1. Автор: Florin Udrea,Cerdin Lee. Владелец: Cambridge Semiconductor Ltd. Дата публикации: 2009-03-05.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11843037B2. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-12.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: EP4060746A1. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-21.

Semiconductor device having compressively strained channel region and method of making same

Номер патента: US20180301552A1. Автор: Toshiharu Nagumo. Владелец: Renesas Electronics Corp. Дата публикации: 2018-10-18.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20230223396A1. Автор: Wolfgang Schnitt,Hans-Martin Ritter,Steffen Holland,Joachim Utzig. Владелец: Nexperia BV. Дата публикации: 2023-07-13.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20160240641A1. Автор: Yusuke Yamashita,Satoru Machida,Jun OKAWARA. Владелец: Toyota Motor Corp. Дата публикации: 2016-08-18.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230307454A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-28.

Vertical semiconductor device with body contact, method of manufacturing vertical semiconductor device with body contact, and electronic apparatus

Номер патента: US20240072173A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-02-29.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US20180336956A1. Автор: Hiroshi Tachibana,Yasutaka Horikoshi,Kotaro SAKUMURA,Keita KASHIMA. Владелец: Renesas Electronics Corp. Дата публикации: 2018-11-22.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US10255984B2. Автор: Hiroshi Tachibana,Yasutaka Horikoshi,Kotaro SAKUMURA,Keita KASHIMA. Владелец: Renesas Electronics Corp. Дата публикации: 2019-04-09.

Semiconductor device, semiconductor laser, and method of producing a semiconductor device

Номер патента: US11876349B2. Автор: Masahiro Murayama. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-01-16.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11848242B2. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4250359A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-27.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11949209B2. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2024-04-02.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230198223A1. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2023-06-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240071834A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12002845B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Yuan-Ching Peng,Ting-Yeh Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12002716B2. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220173243A1. Автор: Kilian ONG,Benjamin HUNG. Владелец: Nexperia BV. Дата публикации: 2022-06-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210118745A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220216112A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-07.

Semiconductor device and method of operating the semiconductor device

Номер патента: US20130069714A1. Автор: Jai-Kwang Shin,U-In Chung,Ho-Jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-03-21.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4310918A1. Автор: Oliver Haeberlen,Gerhard Prechtl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-24.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230307450A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-28.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170194473A1. Автор: Johannes Josephus Theodorus Marinus Donkers,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2017-07-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20180182876A1. Автор: Tadashi Inoue,Yukihiro Shibata. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2018-06-28.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230143543A1. Автор: Shigenobu Maeda,Choongsun Kim,Myoungkyu Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-11.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20030141549A1. Автор: Ichiro Mizushima,Kiyotaka Miyano,Kazuya Ohuchi. Владелец: Toshiba Corp. Дата публикации: 2003-07-31.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20150049277A1. Автор: Shunpei Yamazaki,Hotaka Maruyama,Daisuke Kawae,Yoshiaki Oikawa,Hiromichi Godo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-02-19.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20120214276A1. Автор: Shunpei Yamazaki,Hotaka Maruyama,Daisuke Kawae,Yoshiaki Oikawa,Hiromichi Godo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-08-23.

Methods for assembling semiconductor devices in superimposed relation with adhesive material defining the distance adjacent semiconductor devices are spaced apart from one another

Номер патента: US20050067684A1. Автор: James Derderian. Владелец: Derderian James M.. Дата публикации: 2005-03-31.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4250347A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-27.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: EP4302332A1. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2024-01-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20150137184A1. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Transphorm Japan Inc. Дата публикации: 2015-05-21.

Primer composition, method of forming a primer layer on a semiconductor device, and method of encapsulating a semiconductor device

Номер патента: US20150344730A1. Автор: Joachim Mahler,Swee Kah Lee,Jagen KRISHNAN,Soon Lock Goh,Yik Yee TAN,Chew Theng TAI,Poh Cheng LIM,Peh Hean TEH. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-12-03.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8957453B2. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Transphorm Japan Inc. Дата публикации: 2015-02-17.

Method of fabricating a semiconductor device using element isolation by field shield

Номер патента: US5672526A. Автор: Koichiro Kawamura. Владелец: Nippon Steel Corp. Дата публикации: 1997-09-30.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20090146194A1. Автор: Mihai Adrian Ionescu,Didier Bouvet,Kirsten Moselund. Владелец: Ecole Polytechnique Federale de Lausanne EPFL. Дата публикации: 2009-06-11.

Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate

Номер патента: US6362027B1. Автор: Shunpei Yamazaki,Hiroki Adachi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-03-26.

Methods of forming semiconductor devices, including forming a semiconductor material on a fin, and related semiconductor devices

Номер патента: US20160268416A1. Автор: Shigenobu Maeda,Bo-Ram Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-15.

Semiconductor device and method of producing the semiconductor device

Номер патента: US20080023707A1. Автор: Hideaki Tanaka,Tetsuya Hayashi,Shigeharu Yamagami,Yoshio Shimoida,Masakatsu Hoshi. Владелец: Nissan Motor Co Ltd. Дата публикации: 2008-01-31.

Three-dimensional semiconductor devices with current path selection structure and methods of operating the same

Номер патента: US20140197469A1. Автор: Kohji Kanamori,Youngwoo Park,Dohyun LEE,Jintaek Park,Jaeduk LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-17.

Semiconductor device and method of forming a semiconductor device

Номер патента: EP4345908A1. Автор: ANKIT Kumar,Hungjin Kim. Владелец: Nexperia BV. Дата публикации: 2024-04-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230343857A1. Автор: Hui-Chi CHEN,Chia-Wei Chen,Kuo-Feng Yu,Jian-Hao Chen,Shih-Hang Chiu,An-Hung Tai,Yu-Hong LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Semiconductor Device and Method of Manufacturing a Semiconductor Device

Номер патента: US20140151758A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-06-05.

Manufacturing method of high voltage semiconductor device

Номер патента: US20240154027A1. Автор: Kai-Kuen Chang,Ping-Hung Chiang,Hsin-Han WU. Владелец: United Microelectronics Corp. Дата публикации: 2024-05-09.

Vertical semiconductor device and method of manufacturing vertical semiconductor device

Номер патента: US20190267486A1. Автор: Katsunori Ueno. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-08-29.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20170301769A1. Автор: Yasuyuki Arai,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-19.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20240105785A1. Автор: ANKIT Kumar,Hungjin Kim. Владелец: Nexperia BV. Дата публикации: 2024-03-28.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190386456A1. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2019-12-19.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11038317B2. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2021-06-15.

Method of manufacturing a semiconductor device

Номер патента: US20080038897A1. Автор: Hiroshi Yoshino,Kazushi Suzuki,Yoshihiro Takaishi. Владелец: Elpida Memory Inc. Дата публикации: 2008-02-14.

Method of making a semiconductor device using a nanochannel glass matrix

Номер патента: US5306661A. Автор: Brian L. Justus,Ronald J. Tonucci. Владелец: US Department of Navy. Дата публикации: 1994-04-26.

Method of manufacturing a semiconductor device

Номер патента: US8058124B2. Автор: Akiko Fujita,Masataka Ono. Владелец: Renesas Electronics Corp. Дата публикации: 2011-11-15.

Semiconductor devices with minimized current flow differences and methods of same

Номер патента: US20140106517A1. Автор: John V. Veliadis. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2014-04-17.

Method of forming a semiconductor device

Номер патента: US20230420544A1. Автор: Hans Mertens,Sujith Subramanian. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2023-12-28.

Semiconductor device and a method of operating the semiconductor device

Номер патента: US20200395412A1. Автор: Satoru Yamada,Taehun Kim,Kyunghwan Lee,Yongseok Kim,Seokhan Park,Jaeho Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Semiconductor device and method of forming the semiconductor device

Номер патента: US20190259832A1. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2019-08-22.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20240030217A1. Автор: Gerhard Prechtl,Oliver Häberlen. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-25.

Semiconductor Devices with Minimized Current Flow Differences and Methods of Same

Номер патента: US20120161208A1. Автор: John V. Veliadis. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2012-06-28.

Nanometer semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same

Номер патента: US20170162714A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-06-08.

Method of manufacturing a semiconductor device

Номер патента: US20100197122A1. Автор: Akiko Fujita,Masataka Ono. Владелец: NEC Electronics Corp. Дата публикации: 2010-08-05.

Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance

Номер патента: US6512261B2. Автор: Akinori Kinugasa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-01-28.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20150270276A1. Автор: Bernd Landgraf. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-09-24.

Semiconductor device including capacitors and manufacturing method thereof

Номер патента: US20230268379A1. Автор: Hyun Soo Shin,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-08-24.

Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device

Номер патента: EP1003207A3. Автор: Koichiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2003-08-06.

Semiconductor devices with minimized current flow differences and methods of same

Номер патента: US20140175460A1. Автор: John V. Veliadis. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2014-06-26.

Semiconductor devices with minimized current flow differences and methods of same

Номер патента: WO2012092193A2. Автор: John Victor D. Veliadis. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2012-07-05.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240072151A1. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20120025286A1. Автор: Kazuhiro Nojima. Владелец: Elpida Memory Inc. Дата публикации: 2012-02-02.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20210265808A1. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2021-08-26.

Semiconductor devices on diffusion barrier coated substrates and methods of making the same

Номер патента: CA2761748C. Автор: Kevin McCarthy,Michael Kocsis,Arvind Kamath,Gloria Man Ting Wong. Владелец: Thin Film Electronics ASA. Дата публикации: 2016-01-12.

Semiconductor devices on diffusion barrier coated substrates and methods of making the same

Номер патента: SG175709A1. Автор: Kevin McCarthy,Michael Kocsis,Arvind Kamath,Gloria Man Ting Wong. Владелец: Kovio Inc. Дата публикации: 2011-12-29.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20170179124A1. Автор: Ju-youn Kim,Sang-jung KANG,Ji-Hwan An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-22.

Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

Номер патента: US11682703B2. Автор: Ralf Siemieniec,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-06-20.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11869936B2. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2024-01-09.

Semiconductor device and method of producing a semiconductor device

Номер патента: US20200062586A1. Автор: Sabine Trupp,Karl Neumeier,Michael HENFLING. Владелец: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV. Дата публикации: 2020-02-27.

Method of forming trench semiconductor device having multiple trench depths

Номер патента: US20170288027A1. Автор: Mohammed Tanvir Quddus,Michael Thomason,Mihir Mudholkar. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-10-05.

Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

Номер патента: US20210234010A1. Автор: Ralf Siemieniec,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2021-07-29.

Method of forming a semiconductor device and structure therefor

Номер патента: US20170365678A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-12-21.

Semiconductor device and method of producing a semiconductor device

Номер патента: US20180208459A1. Автор: Sabine Trupp,Karl Neumeier,Michael HENFLING. Владелец: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV. Дата публикации: 2018-07-26.

Method of manufacturing a semiconductor device

Номер патента: US7071041B2. Автор: Hisashi Ohtani,Shunpei Yamazaki,Hideto Ohnuma. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2006-07-04.

Method of forming a semiconductor device by activating regions with a laser light

Номер патента: US5561081A. Автор: Shunpei Yamazaki,Hideto Ohnuma,Hongyong Zhang,Atsunori Suzuki,Akira Takenouchi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1996-10-01.

Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device

Номер патента: US20090273044A1. Автор: Rainer Leuschner. Владелец: Individual. Дата публикации: 2009-11-05.

Method of forming a semiconductor device having a capacitor and a resistor

Номер патента: US7592658B2. Автор: Hsiu-wen Hsu. Владелец: Episil Technologies Inc. Дата публикации: 2009-09-22.

Semiconductor device including two thin-film transistors and method of fabricating the same

Номер патента: US11908924B2. Автор: Junhyung LIM,Taesang Kim,Seryeong KIM,Jaybum KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-02-20.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11869937B2. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2024-01-09.

Method of manufacturing nitride semiconductor device

Номер патента: US11984528B2. Автор: Toshihiko KISHINO. Владелец: Nichia Corp. Дата публикации: 2024-05-14.

Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device

Номер патента: US20170092787A1. Автор: Rainer Minixhofer,Guenther KOPPITSCH. Владелец: ams AG. Дата публикации: 2017-03-30.

Method of forming a semiconductor device having a capacitor and a resistor

Номер патента: US20080116498A1. Автор: Hsiu-wen Hsu. Владелец: Episil Technologies Inc. Дата публикации: 2008-05-22.

Semiconductor device and method of forming the semiconductor device

Номер патента: US20200168608A1. Автор: Terence B. Hook,Brent Alan Anderson,Shawn P. Fetterolf. Владелец: Elpis Technologies Inc. Дата публикации: 2020-05-28.

Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device

Номер патента: WO2015176911A1. Автор: Rainer Minixhofer,Günther Koppitsch. Владелец: ams AG. Дата публикации: 2015-11-26.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US20240332890A1. Автор: Daisuke Inoue,Konosuke AOYAMA. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2024-10-03.

Semiconductor device, control device for transmission, and control method of electronic control unit

Номер патента: US20240186046A1. Автор: Yoichiro Kobayashi,Keishi KOMORIYAMA,Minoru MIGITA. Владелец: Hitachi Astemo Ltd. Дата публикации: 2024-06-06.

Method of controlling an adjustable nozzle and method of making a semiconductor device

Номер патента: US10910199B2. Автор: Ding-I Liu,Wen-Long Lee,Wei-Ching Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-02-02.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20070263691A1. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2007-11-15.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US7263115B2. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Edward Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2007-08-28.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20040233952A1. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Hooper,Brendan Poole. Владелец: Individual. Дата публикации: 2004-11-25.

A Semiconductor Device and a Method of Manufacturing a Semiconductor Device

Номер патента: EP1465303A3. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Edward Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2005-07-27.

Semiconductor device configured to store parity data and method of operating the semiconductor device

Номер патента: US20240021223A1. Автор: Byoung Sung You. Владелец: SK hynix Inc. Дата публикации: 2024-01-18.

Stencil mask and method of producing the same, semiconductor device produced using the stencil mask and method of producing the semiconductor device

Номер патента: US20030022496A1. Автор: Isao Ashida. Владелец: Sony Corp. Дата публикации: 2003-01-30.

Method of making a semiconductor device

Номер патента: US5459082A. Автор: Jae S. Jeong. Владелец: Gold Star Co Ltd. Дата публикации: 1995-10-17.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240341104A1. Автор: Woo Tae Lee. Владелец: SK hynix Inc. Дата публикации: 2024-10-10.

Semiconductor device with high- and low-density regions of transistor elements on single semiconductor substrate, and method of manufacturing such semiconductor device

Номер патента: US20010006834A1. Автор: Toshiyuki Hirota,Natsuki Sato. Владелец: NEC Corp. Дата публикации: 2001-07-05.

Semiconductor device and method for controlling amplitude of signal in the semiconductor device

Номер патента: US20210058080A1. Автор: Seung Jin Kim,Seung Hyun Oh,Wan Kim,Byung Ki HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Semiconductor device, semiconductor system, and method of operating the semiconductor device

Номер патента: US20200388320A1. Автор: Soo Min Lee,Ki Hwan SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Semiconductor device having reduced field oxide recess and method of fabrication

Номер патента: US20010051410A1. Автор: Hao Fang,Toru Ishigaki,Masaaki Higashitani. Владелец: Individual. Дата публикации: 2001-12-13.

Semiconductor device having reduced field oxide recess and method of fabrication

Номер патента: US6492229B2. Автор: Hao Fang,Toru Ishigaki,Masaaki Higashitani. Владелец: Fujitsu AMD Semiconductor Ltd. Дата публикации: 2002-12-10.

Semiconductor device with integrated soft-magnetic component, and method of producing same

Номер патента: EP4394418A1. Автор: Daniel Rosenfeld,Gael Close,Lionel Tombez,Appo Van Der Wiel,Guido DUPONT. Владелец: Melexis Technologies SA. Дата публикации: 2024-07-03.

Semiconductor device with integrated soft-magnetic component, and method of producing same

Номер патента: WO2024141406A1. Автор: Daniel Rosenfeld,Gael Close,Lionel Tombez,Appo Van Der Wiel,Guido DUPONT. Владелец: Melexis Technologies SA. Дата публикации: 2024-07-04.

Semiconductor device with daisy-chained delay cells and method of forming same

Номер патента: US12015410B2. Автор: Jerry Chang Jui Kao,Qingchao Meng,Zhang-Ying YAN,Huaixin XIAN,Longbiao LEI,Sinpei GOA. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2024-06-18.

Semiconductor device with integrated soft-magnetic component, and method of producing same

Номер патента: US20240224815A1. Автор: Daniel Rosenfeld,Gael Close,Lionel Tombez,Appo Van Der Wiel,Guido DUPONT. Владелец: Melexis Technologies SA. Дата публикации: 2024-07-04.

Semiconductor device having input/output wrappers, and a method of controlling the wrappers

Номер патента: US20110279160A1. Автор: Jae Young Lee,JongPil Lee,Mookyung Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-11-17.

Fragile-board supporting method, circuit-board supporting device, and electric-circuit manufacturing method

Номер патента: US20020141166A1. Автор: Shinsuke Suhara. Владелец: Fuji Machine Manufacturing Co Ltd. Дата публикации: 2002-10-03.

Semiconductor device including level shifter, display device including the semiconductor device and method of operating the semiconductor device

Номер патента: US20110032242A1. Автор: Woo-nyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-02-10.

Semiconductor device including level shifter, display device including the semiconductor device and method of operating the semiconductor device

Номер патента: US8502813B2. Автор: Woo-nyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-08-06.

Semiconductor device, electronic device, and method of testing the semiconductor device

Номер патента: US20120306540A1. Автор: Wataru Tanaka,Satoru Ikeda,Yayoi Nagao,Danichi Komatsu. Владелец: Renesas Electronics Corp. Дата публикации: 2012-12-06.

Semiconductor device, electronic device, and method of testing the semiconductor device

Номер патента: US8575978B2. Автор: Wataru Tanaka,Satoru Ikeda,Yayoi Nagao,Danichi Komatsu. Владелец: Renesas Electronics Corp. Дата публикации: 2013-11-05.

Semiconductor device and it's manufacturing method

Номер патента: US7087956B2. Автор: Taku Umebayashi. Владелец: Sony Corp. Дата публикации: 2006-08-08.

Method of fabricating a semiconductor device

Номер патента: WO2024037710A1. Автор: Amrita Singh,Elvedin MEMISEVIC,Philippe CAROFF-GAONAC'H,Frederik BOEKHOUT,Gowri Santhosh Nag Rajkiran THOLAPI. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-02-22.

Method of forming a semiconductor device and structure therefor

Номер патента: US9473861B1. Автор: Dennis Wayne Mitchler,James Gregory Ryan. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-10-18.

Semiconductor device, power-on reset circuit, and control method of semiconductor device

Номер патента: US20230106646A1. Автор: Suguru KAWASOE. Владелец: Lapis Technology Co Ltd. Дата публикации: 2023-04-06.

Semiconductor device, power-on reset circuit, and control method of semiconductor device

Номер патента: US11942928B2. Автор: Suguru KAWASOE. Владелец: Lapis Technology Co Ltd. Дата публикации: 2024-03-26.

Semiconductor device and search circuit for and method of searching for erasure count in semiconductor memory

Номер патента: US20160180955A1. Автор: Satoshi Miyazaki,Takuya Matsumoto,Tomoyuki Maeda. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2016-06-23.

Semiconductor device, semiconductor system including the same, control method of semiconductor device, and check list generation program

Номер патента: US20160364351A1. Автор: Koichiro Noguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2016-12-15.

Semiconductor device, semiconductor system including the semiconductor device, and method of operating the semiconductor device and system

Номер патента: US20190267058A1. Автор: Dong Kyun Kim,Min su Park. Владелец: SK hynix Inc. Дата публикации: 2019-08-29.

System and method for semiconductor device compact modeling using multiple specialized artificial neural networks for each semiconductor device operation region

Номер патента: US20230385494A1. Автор: Jung Hwan Park,Chan Woo Park. Владелец: Alsemy Inc. Дата публикации: 2023-11-30.

Method of manufacturing a semiconductor device

Номер патента: US6955870B2. Автор: Hideo Miura,Hideyuki Aoki,Masatoshi Kanamaru,Ryuji Kohno,Hiroya Shimizu. Владелец: HITACHI LTD. Дата публикации: 2005-10-18.

Method of fabricating integrated semiconductor device and structure thereof

Номер патента: US9302904B2. Автор: Shuo-Lun Tu,Ming-Tung Lee,Hsueh-I Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-04-05.

Method of fabricating integrated semiconductor device and structure thereof

Номер патента: US20150044808A1. Автор: Shuo-Lun Tu,Ming-Tung Lee,Hsueh-I Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2015-02-12.

Method and device for simulating performance of semiconductor device, and system and method for evaluating performance of semiconductor device

Номер патента: US20240070362A1. Автор: Sung-min Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: EP3245018A1. Автор: Urban Harrysson. Владелец: Digital Metal AB. Дата публикации: 2017-11-22.

Methods for decomposing circuit design layouts and for fabricating semiconductor devices using decomposed patterns

Номер патента: US20130219347A1. Автор: Peng XIE,Yi Zou,Luigi Capodieci,Vito Dai,Swamy Muddu,Lynn T. Wang. Владелец: Globalfoundries Inc. Дата публикации: 2013-08-22.

Semiconductor devices having mirrored terminal arrangements, devices including same, and methods of testing such semiconductor devices

Номер патента: US20020044476A1. Автор: Steven Hamren,James Nuxoll. Владелец: Individual. Дата публикации: 2002-04-18.

Method of fabricating a semiconductor device

Номер патента: US20200143010A1. Автор: Kang-Min Jung,Sangtae Kim,Bong-Soo Kang,Sooyong Lee,Kyoil KOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-07.

Titanium etchant composition and method of forming a semiconductor device using the same

Номер патента: US8801958B2. Автор: Dong-Min Kang,Baiksoon Choi,Seunghyun Ahn,KyooChul Cho,Jeong Kwon,Heon jin Park,JungIg Jeon. Владелец: Samyoung Pure Chemicals Co Ltd. Дата публикации: 2014-08-12.

Titanium etchant composition and method of forming a semiconductor device using the same

Номер патента: US20110240912A1. Автор: Dong-Min Kang,Baiksoon Choi,Seunghyun Ahn,KyooChul Cho,Jeong Kwon,Heon jin Park,JungIg Jeon. Владелец: Samyoung Pure Chemicals Co Ltd. Дата публикации: 2011-10-06.

Semiconductor device including memory cell and sense amplifer, and IC card including semiconductor device

Номер патента: US9543007B2. Автор: Ryotaro Azuma,Yoshikazu Katoh. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-01-10.

Method for manufacturing a master mold which is used to form a micropatterned film applied to an exterior of a household appliance and manufacturing apparatus and method of the film using the master mold

Номер патента: WO2011028060A9. Автор: Ju Hyun Kim,Young Kyu Kim,Seok Jae JEONG. Владелец: LG ELECTRONICS INC.. Дата публикации: 2011-08-04.

Method for manufacturing a master mold which is used to form a micropatterned film applied to an exterior of a household appliance and manufacturing apparatus and method of the film using the master mold

Номер патента: EP2473329A2. Автор: Ju Hyun Kim,Young Kyu Kim,Seok Jae JEONG. Владелец: LG ELECTRONICS INC. Дата публикации: 2012-07-11.

Semiconductor device including pre-charge circuit and a method of operating thereof

Номер патента: US20240144993A1. Автор: Motoki Tamura. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor device and method of testing the semiconductor device

Номер патента: US20240177791A1. Автор: Jun Hyuk Lee. Владелец: SK hynix Inc. Дата публикации: 2024-05-30.

Semiconductor device for performing a program operation and a method of operating the semiconductor device

Номер патента: US20240170079A1. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

Semiconductor device including a clock source for generating a clock signal and a clock control circuit for controlling the clock source in hardware, a semiconductor system including the semiconductor device, and a method of operating the semiconductor device

Номер патента: US10503674B2. Автор: Jae Gon Lee,AH Chan Kim,Ho Yeon Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-10.

Semiconductor device related to performance of a program operation and method of operating the semiconductor device

Номер патента: US20240161832A1. Автор: Hyung Jin Choi,Chan Hui Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Semiconductor device with improved dielectric film structure and method of manufacturing same

Номер патента: US20230278073A1. Автор: Chia-Ming Hung,Hsiang-Fu Chen,Yi-Chieh Huang,Kuan-Chi Tsai,I-Hsuan CHIU,Kang-Yi Lien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

Номер патента: US20210096475A1. Автор: Hsu-Ting Huang,Chin-Hsiang Lin,Ru-Gun Liu,Shinn-Sheng Yu,Kenji Yamazoe,Minfeng CHEN,Shuo-Yen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

Номер патента: US20230333486A1. Автор: Hsu-Ting Huang,Chin-Hsiang Lin,Ru-Gun Liu,Shinn-Sheng Yu,Kenji Yamazoe,Minfeng CHEN,Shuo-Yen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US11907681B2. Автор: Taro Fujii,Takao Toi,Katsumi Togawa,Teruhito TANAKA. Владелец: Renesas Electronics Corp. Дата публикации: 2024-02-20.

Method of correcting a design layout of a semiconductor device, a computing device performing the same and a method of fabricating a semiconductor device using the same

Номер патента: US20230229073A1. Автор: Jongmin Lee,Cheolhwan Kim,Jichang SIM,Sangeun GO,Ohhun KWON,Hyuckjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-20.

Optical semiconductor device, light phase control device, light intensity control device, and method of producing optical semiconductor device

Номер патента: US20050047704A1. Автор: Fumio Ohtake. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2005-03-03.

Method of designing a semiconductor device

Номер патента: US20090007045A1. Автор: Noriaki Oda. Владелец: NEC Electronics Corp. Дата публикации: 2009-01-01.

Method of designing a semiconductor device

Номер патента: US8146044B2. Автор: Noriaki Oda. Владелец: Renesas Electronics Corp. Дата публикации: 2012-03-27.

Method of making a semiconductor device force and/or acceleration sensor

Номер патента: US5840597A. Автор: Siegbert Hartauer. Владелец: Texas Instruments Inc. Дата публикации: 1998-11-24.

Method of manufacturing a semiconductor device and semiconductor device manufacturing tool

Номер патента: US20230418156A1. Автор: Hui-Chun Lee,Tung-Hung FENG,Peng-Ting LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-28.

A method of testing a semiconductor device as well as a corresponding testing device

Номер патента: EP4290251A1. Автор: Magnus RUMMEY. Владелец: Nexperia BV. Дата публикации: 2023-12-13.

Method of testing a semiconductor device as well as a corresponding testing device

Номер патента: US20230400503A1. Автор: Magnus Siegfried RUMMEY. Владелец: Nexperia BV. Дата публикации: 2023-12-14.

Semiconductor device, battery monitoring system, and address setting method of semiconductor device

Номер патента: US20160055890A1. Автор: Yoshikatsu Matsuo. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2016-02-25.

Method of measuring a semiconductor device

Номер патента: US11830176B2. Автор: Kai Lee,Chih-Chien Huang,Hao-Hsiang Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-28.

SEMICONDUCTOR DEVICE INCLUDING GROUP III-V BARRIER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер патента: US20130119347A1. Автор: CHO Young-Jin,Hong Ki-ha,LEE Sang-moon,KIM Kyoung-yeon,HWANG Eui-chul. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-05-16.

ROTATED SEMICONDUCTOR DEVICE FAN-OUT WAFER LEVEL PACKAGES AND METHODS OF MANUFACTURING ROTATED SEMICONDUCTOR DEVICE FAN-OUT WAFER LEVEL PACKAGES

Номер патента: US20130256883A1. Автор: Meyer Thorsten,Waidhas Bernd,Ort Thomas. Владелец: Intel Mobile Communications GmbH. Дата публикации: 2013-10-03.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.