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Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP3953969B1
Опубликовано: 29-05-2024
Автор(ы): Di Wang, Wenxi Zhou, Zhiliang Xia, Zhong Zhang
Принадлежит: Yangtze Memory Technologies Co Ltd
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Номер патента: US20200066739A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-02-27.

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Номер патента: US20210082931A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-18.

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Номер патента: US20240079322A1. Автор: Darwin A. Clampitt,David NEUMEYER,Shruthi Kumara Vadivel. Владелец: Micron Technology Inc. Дата публикации: 2024-03-07.

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Номер патента: US20240274191A1. Автор: Koichi Matsuno,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

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Номер патента: WO2024172891A1. Автор: Koichi Matsuno,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-22.

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Номер патента: US20240021247A1. Автор: Xin Zhang,Chuan Yang,Qian Gao,Yujun Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-18.

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Номер патента: US09875929B1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Keerti Shukla. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-23.

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Номер патента: US11800710B2. Автор: Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-24.

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Номер патента: US09935050B2. Автор: Zhenyu Lu,Yuki Mizutani,Mohan DUNGA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-03.

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Номер патента: US20210104548A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

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Номер патента: US20080233674A1. Автор: Hyun-Hee Nam,Jeong-Lyeol Park. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2008-09-25.

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Номер патента: WO2024223449A1. Автор: Kazuma Yamamoto,Hiroshi Yanagita. Владелец: Merck Patent GmBH. Дата публикации: 2024-10-31.

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Номер патента: US12040274B2. Автор: Lifang Xu,Indra V. Chary,Shuangqiang Luo,Lingyu Kong,Sok Han Wong. Владелец: Micron Technology Inc. Дата публикации: 2024-07-16.

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Номер патента: US20200105595A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Senaka Krishna Kanakamedala,Fumitaka Amano,Genta Mizuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-02.

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Номер патента: US20210066461A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Zhengliang Xia. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-04.

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Номер патента: US20200258816A1. Автор: Akio Nishida,James Kai,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

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Номер патента: US20200119025A1. Автор: Chieh-Fang Chen,Yu-Wei Jiang,Jia-Rong Chiou. Владелец: Macronix International Co Ltd. Дата публикации: 2020-04-16.

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Номер патента: US09960032B2. Автор: Youn Soo Kim,Tsubasa Shiratori,Jae wan Chang. Владелец: Adeka Corp. Дата публикации: 2018-05-01.

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Номер патента: US20220406794A1. Автор: Naoki Takeguchi,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-12-22.

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Номер патента: US20210305266A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

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Номер патента: US20210265369A1. Автор: Youngwoo Park,Soo Doo Chae,Sang Cheol Han. Владелец: Tokyo Electron Ltd. Дата публикации: 2021-08-26.

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Номер патента: WO2021194535A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

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Номер патента: WO2024118160A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

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Номер патента: SG10201402625UA. Автор: Joydeep Guha,Anand Chandrashekar,Hua Xiang,Raashina Hamayun. Владелец: Lam Res Corp. Дата публикации: 2014-12-30.

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Номер патента: WO2017048367A1. Автор: Jian Zhou,Sri Sai Sivakumar Vegunta,Gowrisankar Damarla. Владелец: Intel Corporation. Дата публикации: 2017-03-23.

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Номер патента: WO2023086126A1. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-05-19.

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Номер патента: US12022656B2. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

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Номер патента: US20230413542A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Ling Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

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Номер патента: US12058864B2. Автор: Wei Xu,Wenbin Zhou,Qingqing WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

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Номер патента: EP3963630A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-09.

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Номер патента: US20210225863A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-07-22.

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Номер патента: US20210272982A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-02.

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Номер патента: EP4289005A1. Автор: Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

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Номер патента: US20090001520A1. Автор: Sung Ho Hyun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-01-01.

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Номер патента: US7800201B2. Автор: Sung Ho Hyun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-09-21.

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Номер патента: US20210335999A1. Автор: James Kai,Johann Alsmeier,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-10-28.

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Номер патента: US20230284445A1. Автор: Zhiliang Xia,Ping Yan,Qiang Xu,Zongliang Huo,Guangji Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

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Номер патента: US11778823B2. Автор: Hang-Ting Lue,Teng-Hao Yeh,Guan-Ru Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2023-10-03.

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Номер патента: US11871580B2. Автор: Xiang Yang,Yanli Zhang,Peng Zhang,Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-09.

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Номер патента: US11856765B2. Автор: Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-26.

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Номер патента: US20200251488A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,James Kai,Takaaki IWAI,Sayako Nagamine,Ching-Huang Lu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

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Номер патента: US12082407B2. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

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Номер патента: US20220077181A1. Автор: Zhu Yang,CHEN ZUO,ZHEN Guo,BIN Yuan,Jingjing Geng,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

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Номер патента: US20240243105A1. Автор: Yih Wang,Hiroki Noguchi,Hidehiro Fujiwara,Tzu-Hsien YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-18.

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Номер патента: US20230301106A1. Автор: Zhu Yang,CHEN ZUO,ZHEN Guo,BIN Yuan,Jingjing Geng,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-21.

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Номер патента: US11978723B2. Автор: Yih Wang,Hiroki Noguchi,Hidehiro Fujiwara,Tzu-Hsien YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-07.

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Номер патента: US20210320124A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-10-14.

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Номер патента: US20210066333A1. Автор: Zhiliang Xia,Fandong LIU,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-04.

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Номер патента: US11758722B2. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: US20200381452A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-03.

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Номер патента: US20210091102A1. Автор: Juan Tang,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-25.

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Номер патента: US20200058674A1. Автор: Yangbo Jiang,Liang Hui Wu,Ya Jun Wang,Jingping Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-02-20.

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Номер патента: US11805647B2. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

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Номер патента: US20200251487A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-06.

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Номер патента: US12068192B2. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini. Владелец: Micron Technology Inc. Дата публикации: 2024-08-20.

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Номер патента: US20210126002A1. Автор: Juan Tang,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-29.

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Номер патента: US20200273872A1. Автор: Zhiliang Xia,Fandong LIU,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-27.

Interconnect Structures and Methods and Apparatuses for Forming the Same

Номер патента: US20230317459A1. Автор: Chun-Sheng Chen,Huei-Wen Hsieh,Yu-Cheng Hsiao,Chun-Hsu YANG,Nai-Hao YANG,Kuan-Chia Chen,Che-Wei Tien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

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Номер патента: US20220045091A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

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Номер патента: US11956953B2. Автор: Zhenyu Lu,Feng Pan,GuanPing WU,Wenguang Shi,Xianjin Wan,Baoyou Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-09.

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Номер патента: US20080121622A1. Автор: Seung-ki Chae,Pil-kwon Jun,Yang-Koo Lee,Dong-won Hwang,Kook-Joo Kim,Jung-In LA. Владелец: Cheil Industries Inc. Дата публикации: 2008-05-29.

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Номер патента: US20080057738A1. Автор: June Woo Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

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Номер патента: US20230354608A1. Автор: Fei Zhou,Raghuveer S. Makala,Masanori Tsutsumi,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-02.

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Номер патента: US20210020650A1. Автор: Chih-Kai Yang,Tzung-Ting Han. Владелец: Macronix International Co Ltd. Дата публикации: 2021-01-21.

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Номер патента: US20200343235A1. Автор: Yanli Zhang,Johann Alsmeier,Kwang-Ho Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-10-29.

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Номер патента: US20220384255A1. Автор: Chun-Sheng Chen,Huei-Wen Hsieh,Yu-Cheng Hsiao,Chun-Hsu YANG,Nai-Hao YANG,Kuan-Chia Chen,Che-Wei Tien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-01.

Interconnect structures and methods and apparatuses for forming the same

Номер патента: US11694899B2. Автор: Chun-Sheng Chen,Huei-Wen Hsieh,Yu-Cheng Hsiao,Chun-Hsu YANG,Nai-Hao YANG,Kuan-Chia Chen,Che-Wei Tien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-04.

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Номер патента: WO2016022319A2. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-02-11.

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Номер патента: WO2016022319A3. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-05-06.

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Номер патента: US20240312830A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

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Номер патента: WO2016022320A1. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-02-11.

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Номер патента: US20210091093A1. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

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Номер патента: US09941295B2. Автор: Peter Rabkin,Johann Alsmeier,Masaaki Higashitani,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-10.

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Номер патента: US20230361031A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

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Номер патента: US20190148392A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Senaka Krishna Kanakamedala,Murshed CHOWDHURY,Yoshihiro Kanno. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-05-16.

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Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the same

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Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory device

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Three-dimensional memory device with a columnar memory opening arrangement and method of making thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

Номер патента: US11791327B2. Автор: Akio Nishida,Fumiaki TOYAMA,Masaaki Higashitani,Kwang-Ho Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-17.

Three-dimensional memory arrays with layer selector transistors

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Word line structures for three-dimensional memory arrays

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Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230343705A1. Автор: Hyun Soo Shin. Владелец: SK hynix Inc. Дата публикации: 2023-10-26.

Decoder architectures for three-dimensional memory devices

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Word line structures for three-dimensional memory arrays

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Word line structures for three-dimensional memory arrays

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Three-dimensional memory containing a staircase with dummy steps and method of making thereof with step length control

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Three-dimensional memory array with local line selector

Номер патента: US20230262985A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Three-dimensional memory array with local line selector

Номер патента: US12035534B2. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Three-dimensional memory array with local line selector

Номер патента: US20220254791A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Cheng-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Three-dimensional memory array with local line selector

Номер патента: US20240324230A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Word Line Decoder Circuitry under a Three-Dimensional Memory Array

Номер патента: US20190057741A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-02-21.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: EP3660901A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-03.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: EP3375012A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-09-19.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: WO2017142617A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-24.

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Номер патента: US20240147720A1. Автор: Chang Woo Kang. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

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Номер патента: US20210151438A1. Автор: Rajesh Kumar,Tahir Ghani,Abhishek A. Sharma,Mauro J. Kobrinsky,Swaminathan Sivakumar,Kinyip PHOA,Wilfred Gomes,Elliot Tan. Владелец: Intel Corp. Дата публикации: 2021-05-20.

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Номер патента: US11991887B2. Автор: Chun-Chieh Lu,Yi-Ching Liu,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

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Номер патента: US20240047349A1. Автор: Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2024-02-08.

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Номер патента: US20230134659A1. Автор: LIANG Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

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Номер патента: US20190074291A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-03-07.

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Номер патента: US20210375940A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

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Номер патента: US11810833B2. Автор: Tsung-Yu Chen,Hsien-Pin Hu,Wensen Hung,Tsung-Shu Lin,Chen-Hsiang Lao,Wen-Hsin Wei. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-07.

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Номер патента: CN101652498A. Автор: 中河原均. Владелец: Canon Anelva Corp. Дата публикации: 2010-02-17.

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Номер патента: US11985824B2. Автор: Jianzhong Wu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-14.

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Номер патента: EP4401127A2. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

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Номер патента: US20150114925A1. Автор: Kenneth R. Smith,K. Reed Gleason,Eric Strid,Mike Jolley,Koby L. Duckworth,Peter Hanaway. Владелец: CASCADE MICROTECH INC. Дата публикации: 2015-04-30.

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Номер патента: US20150301082A1. Автор: Kenneth R. Smith,K. Reed Gleason,Eric Strid,Mike Jolley,Koby L. Duckworth,Peter Hanaway. Владелец: CASCADE MICROTECH INC. Дата публикации: 2015-10-22.

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Номер патента: US11800707B2. Автор: Tuo Li,Jingjing Geng,Shuangshuang PENG,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-24.

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Номер патента: WO2020220280A1. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-11-05.

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Номер патента: US20230326810A1. Автор: Ho-gyeong Yun,Ki Seok Jang,JiHo JOO,Jin Hyuk OH,Kwang-Seong Choi,Yong Sung Eom,Seok-Hwan Moon,Gwang-Mun Choi,Chanmi LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-10-12.

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Номер патента: US20200243361A1. Автор: Ming-Chien Chiu,Hsin-Min Hsueh,Chia-Ho CHUANG. Владелец: Gudeng Precision Industrial Co Ltd. Дата публикации: 2020-07-30.

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Номер патента: US12046464B2. Автор: Hyun Jin Kim,Jong Kyoung Park,Hoon Han,Hyo San LEE,Mi Hyun Park,Ga Young SONG,Jung Youl LEE,Han Sol LIM. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2024-07-23.

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Номер патента: US20220336206A1. Автор: Hyun Jin Kim,Jong Kyoung Park,Hoon Han,Hyo San LEE,Mi Hyun Park,Ga Young SONG,Jung Youl LEE,Han Sol LIM. Владелец: Dongjin Semichem Co Ltd. Дата публикации: 2022-10-20.

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Номер патента: US20150348859A1. Автор: Hironobu Moriyama. Владелец: Dexerials Corp. Дата публикации: 2015-12-03.

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Номер патента: US09881814B2. Автор: Seungjin Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-30.

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Номер патента: US20110306192A1. Автор: Eun Shil Park,Tae Kyun Kim,Yong Seok Eun,Kyong Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-12-15.

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Номер патента: US20200348594A1. Автор: Soo Young Choi,Tsunehiro Nishi,Brian Cardineau,Sangyoon Woo,Chawon KOH,Jason Stowers. Владелец: Inpria Corp. Дата публикации: 2020-11-05.

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Номер патента: US10401731B2. Автор: LU Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-09-03.

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Номер патента: US20180173098A1. Автор: LU Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-06-21.

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Номер патента: US20160017191A1. Автор: Taichi Koyama. Владелец: Dexerials Corp. Дата публикации: 2016-01-21.

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Номер патента: US20230130025A1. Автор: Tsunehiro Nishi,Ji Young Park,Min Young Lee,Chang Soo Woo,Cha Won Koh,Hyun Jae Lee,Dong Il Shin. Владелец: Samsung SDI Co Ltd. Дата публикации: 2023-04-27.

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Номер патента: US20240237337A9. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials Inc. Дата публикации: 2024-07-11.

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Номер патента: US20230264963A1. Автор: Min Soo Kang,Byung Keun Hwang,Woo Ri Bae,Byeong Ok Cho,Sun Hye Hwang,Sheby Mary George,Ji Eun Yun,Seong Tae OH. Владелец: WONIK MATERIALS CO Ltd. Дата публикации: 2023-08-24.

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Номер патента: EP3286785A1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,George Matamis,Jixin Yu,Wenguang Shi,Junichi Ariyoshi,Xiaolong Hu,Jiyin Xu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-28.

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Номер патента: WO2017074577A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-04.

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Номер патента: EP3332425A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-06-13.

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Номер патента: US20230420370A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-28.

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Номер патента: US20230395511A1. Автор: David H. Wells,Yoshiaki Fukuzumi. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

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Номер патента: US20240038667A1. Автор: Ryo Nakamura,Naohiro Hosoda. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-01.

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Номер патента: US20210384118A1. Автор: Zhiliang Xia,Di Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-09.

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Номер патента: US20230335170A1. Автор: Qiang Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-19.

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Номер патента: US20230345732A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Yi-Ching Liu,Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

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Номер патента: US11758729B2. Автор: Zhiliang Xia,Jun Chen,Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: US12082411B2. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

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Номер патента: WO2024123476A1. Автор: Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US20200006377A1. Автор: Shao-Fu Sanford Chu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-01-02.

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Номер патента: US20240237346A1. Автор: Bing Zhou,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Adarsh RAJASHEKHAR,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

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Номер патента: US20240194263A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US11805646B2. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Jifeng Zhu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

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Номер патента: WO2022132382A1. Автор: Brett D. Lowe,Shuangqiang Luo. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2022-06-23.

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Номер патента: US20230395509A1. Автор: Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

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Номер патента: US20200395374A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

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Номер патента: US11758731B2. Автор: Zhiliang Xia,Jun Chen,Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: WO2024103569A1. Автор: LIANG XIAO,Yi Zhao,Shu Wu,Wenbin Zhou,Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-23.

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Номер патента: US11889694B2. Автор: Hiroyuki Ogawa,Zhixin Cui,Hardwell Chibvongodze,Rajdeep Gautam. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-30.

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Номер патента: US11792988B2. Автор: Hiroyuki Ogawa,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-17.

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Номер патента: US11935596B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-19.

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Номер патента: US20240250023A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

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Номер патента: US12068240B2. Автор: June Lee,Naveen KAUSHIK,Shuai Xu,Xiaojiang Guo. Владелец: Micron Technology Inc. Дата публикации: 2024-08-20.

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Номер патента: US20240355734A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-24.

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Номер патента: US20240332177A1. Автор: Fei Zhou,Ryo Nakamura,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

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Номер патента: US20240107758A1. Автор: Hiroyuki Ogawa,Masato Miyamoto,Keisuke Shigemura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

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Номер патента: WO2024072502A1. Автор: Hiroyuki Ogawa,Masato Miyamoto,Keisuke Shigemura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-04.

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Номер патента: US12020750B2. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

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Номер патента: US20240147723A1. Автор: Hiroyuki Ogawa,Tadashi Nakamura,Takashi Yuda,Nobuyuki Fujimura,Motoo OHAGA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-02.

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Номер патента: WO2024086545A1. Автор: James Kai,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-25.

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Номер патента: US20240341096A1. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-10.

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Номер патента: US20220045088A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

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Номер патента: US20230403850A1. Автор: Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

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Номер патента: EP3262680A2. Автор: Masahide Matsumoto,Masatoshi Nishikawa,Toru Miwa,Ryoichi Honma,Johann Alsmeier,Yuki Mizutani,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

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Номер патента: WO2016140767A1. Автор: Yang Du,Ratibor Radojcic,Sung; Kyu LIM. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2016-09-09.

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Номер патента: US11756596B1. Автор: Lifang Xu,Indra V. Chary,Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2023-09-12.

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Номер патента: EP4333062A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-03-06.

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Номер патента: US20240222367A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-04.

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Номер патента: US20240015961A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-11.

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Номер патента: US11974431B2. Автор: Zhiliang Xia,Zhong Zhang,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-30.

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Номер патента: US20210036018A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-04.

Contact structures for three-dimensional memory device

Номер патента: US20200194447A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-06-18.

Contact structures for three-dimensional memory device

Номер патента: US20210265375A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-26.

Contact structures for three-dimensional memory device

Номер патента: US20230086425A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-23.

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Номер патента: US12101936B2. Автор: Akio Nishida,Yusuke Mukae,Masanori Tsutsumi,Ramy Nashed Bassely SAID,Tatsuya Hinoue,Ryousuke ITOU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-24.

Channel structures for three-dimensional memory devices and methods for forming the same

Номер патента: US20230276623A9. Автор: Zhiliang Xia,Xiaoxin LIU,Xiaolong Du,Tingting Gao,Wanbo Geng,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US20240071423A1. Автор: Fatma Arzum Simsek-Ege,Mingdong Cui,Richard E. Facekenthal. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

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Номер патента: US09953992B1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-24.

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Номер патента: US20240114689A1. Автор: Usha Raghuram,Jie Zhou. Владелец: Sunrise Memory Corp. Дата публикации: 2024-04-04.

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Номер патента: US20210384206A1. Автор: Takaaki IWAI,Hirofumi TOKITA,Yoshitaka Otsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

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Номер патента: US20240334698A1. Автор: Takaaki IWAI,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

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Номер патента: US20210305384A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230129701A1. Автор: Hyun Soo Shin,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

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Номер патента: US11882702B2. Автор: Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-23.

Three-dimensional memory and method for forming same

Номер патента: US20230345710A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-26.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11723209B2. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-08.

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Номер патента: US20180269215A1. Автор: Chun-Min Cheng,Jung-Yi Guo,Chun-Ling Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2018-09-20.

Three-dimensional memory and method for manufacturing the same

Номер патента: US20220165745A1. Автор: Bo Xu,BIN Yuan,Zongke Xu,Qiangwei Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-05-26.

Three-dimensional memory device including wrap around word lines and methods of forming the same

Номер патента: US20210358942A1. Автор: Yanli Zhang,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240196612A1. Автор: Hiroyuki Ogawa,Takaaki IWAI,Masahiro Yaegashi,Akihiro Tobioka,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US20220165747A1. Автор: Chih-Kai Yang,Tzung-Ting Han. Владелец: Macronix International Co Ltd. Дата публикации: 2022-05-26.

Non-volatile three-dimensional memory cell, storage method, and chip assembly

Номер патента: US20240320180A1. Автор: Jun Zhou,Bin Hou,Fengguo ZUO. Владелец: Xian Unilc Semiconductors Co Ltd. Дата публикации: 2024-09-26.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: US20190035803A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: EP3619742A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: WO2019022814A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

Three-dimensional memory device including bottle-shaped memory stack structures and methods of making the same

Номер патента: WO2020060594A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

Номер патента: US11968826B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375908A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

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Номер патента: WO2020040838A1. Автор: Yan Li,Jian Chen,Johann Alsmeier,Tae-Kyung Kim,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-02-27.

Three-dimensional memory device with separated source-side lines and method of making the same

Номер патента: US11889684B2. Автор: Hiroyuki Ogawa,Akio Nishida,Masanori Tsutsumi,Shinsuke YADA,Mitsuteru Mushiga,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-30.

Three-dimensional memory array including dual work function floating gates and method of making the same

Номер патента: US20220254798A1. Автор: Yanli Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US20220189981A1. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: WO2023048778A1. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-03-30.

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

Номер патента: EP3619744A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

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Номер патента: WO2019027541A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-02-07.

Three-dimensional memory device with separated source lines and method of making the same

Номер патента: US20240172431A1. Автор: Makoto Koto,James Kai,Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani,Masanori Tsutsumi,Marika Gunji-Yoneoka,Hisakazu Otoi,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-23.

Three-dimensional memory device with drain-select-level isolation structures and method of making the same

Номер патента: US20200251489A1. Автор: Tomohiro Kubo,James Kai,Masanori Tsutsumi,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384207A1. Автор: Junpei Kanazawa,Takaaki IWAI,Hironori Matsuoka,Hisakazu Otoi,Raiden MATSUNO. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Three-dimensional memory device containing bit line switches

Номер патента: US20200185397A1. Автор: Masatoshi Nishikawa,Toru Miwa,Naoki Ookuma,Takuya Ariki,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-11.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: US12035520B2. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-09.

Three-dimensional memory device and manufacturing method therefor, and three-dimensional memory

Номер патента: EP4266369A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-25.

Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories

Номер патента: US20230422528A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Three-dimensional memory device containing channels with laterally pegged dielectric cores and methods for making the same

Номер патента: US20200251486A1. Автор: Raghuveer S. Makala,Masanori Tsutsumi,Senaka Kanakamedala,Manabu Kakazu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same

Номер патента: US20210143166A1. Автор: Yanli Zhang,Zhen Chen. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-05-13.

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Номер патента: WO2020226702A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-11-12.

Three dimensional memory array architecture

Номер патента: EP2891184A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2015-07-08.

Three dimensional memory array architecture

Номер патента: US20140295638A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2014-10-02.

Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit lines

Номер патента: WO2023287474A1. Автор: Yu-Chung Lien,Keyur Payak,Huai-Yuan Tseng,Shinsuke YADA,Jiahui Yuan,Abhijith Prakash,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-01-19.

Three-dimensional memory, the manufacturing method for the same, and memory system

Номер патента: US20230200076A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-22.

Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectric

Номер патента: US20240098992A1. Автор: Tomohiro Uno,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-21.

Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

Номер патента: WO2020146055A1. Автор: Tetsuya Shirasu,Akio Nishida,Yuji Fukano,Naohiro Hosoda,Kazuma Shimamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-16.

Three dimensional memory device

Номер патента: US20210159243A1. Автор: Teng-Hao Yeh,Chih-Wei Hu. Владелец: Macronix International Co Ltd. Дата публикации: 2021-05-27.

Three-dimensional memory array incorporating serial chain diode stack

Номер патента: US6631085B2. Автор: Bendik Kleveland,Roy E. Scheuerlein,Thomas H. Lee,Mark G. Johnson,N. Johan Knall. Владелец: Matrix Semiconductor Inc. Дата публикации: 2003-10-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230363138A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

Номер патента: US11968834B2. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory and formation method thereof

Номер патента: US20230371231A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Weiping BAI,Xingsong SU,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-16.

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Номер патента: WO2022186848A1. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-09.

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Номер патента: US20240130130A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Memory cell capacitor structures for three-dimensional memory arrays

Номер патента: US20230397401A1. Автор: Yuan He,Sheyang NING,Song Guo. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Three-dimensional memory deivce, manufacturing method thereof, and memory system

Номер патента: US20240130129A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Multiple transistor architecture for three-dimensional memory arrays

Номер патента: US20230307042A1. Автор: Ferdinando Bedeschi. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Dense piers for three-dimensional memory arrays

Номер патента: US20230309326A1. Автор: David H. Wells,Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11849587B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Three-dimensional memory device having a heterostructure quantum well channel

Номер патента: EP3262687A1. Автор: Peter Rabkin,Johann Alsmeier,Masaaki Higashitani,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

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Номер патента: US20170221528A1. Автор: Guobiao Zhang. Владелец: CHENGDU HAICUN IP TECHNOLOGY LLC. Дата публикации: 2017-08-03.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240074204A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

Номер патента: US20210050359A1. Автор: James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Three dimensional memory device

Номер патента: US20210280596A1. Автор: Chun-Min Cheng,Chien-Lan Chiu. Владелец: Macronix International Co Ltd. Дата публикации: 2021-09-09.

Three-dimensional memory device with depletion region position control and method of erasing same using gate induced leakage

Номер патента: WO2021194538A1. Автор: Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Manufacturing Methods of JFET-Type Compact Three-Dimensional Memory

Номер патента: US20170186817A1. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2017-06-29.

Method for fabricating three-dimensional memory

Номер патента: US20240172433A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Bo-Feng YOUNG,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Three dimensional memory structure

Номер патента: EP2965360A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corp. Дата публикации: 2016-01-13.

Three dimensional memory structure

Номер патента: US20150333085A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corp. Дата публикации: 2015-11-19.

Three dimensional memory structure

Номер патента: WO2014138056A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corporation. Дата публикации: 2014-09-12.

Three-dimensional memory and fabricating method thereof

Номер патента: US11903189B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Bo-Feng YOUNG,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Trench and pier architectures for three-dimensional memory arrays

Номер патента: US20230329010A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-10-12.

Sparse piers for three-dimensional memory arrays

Номер патента: US20230309426A1. Автор: David H. Wells,Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Twin channel access device for vertical three-dimensional memory

Номер патента: US20240188280A1. Автор: Haitao Liu,Scott E. Sills,Kamal M. Karda,Si-Woo Lee. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Twin channel access device for vertical three-dimensional memory

Номер патента: WO2024118710A1. Автор: Haitao Liu,Scott E. Sills,Kamal M. Karda,Si-Woo Lee. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-06-06.

Three-dimensional memory and fabrication method thereof

Номер патента: US20230138251A1. Автор: Kun Zhang,Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

Merged cavities and buried etch stops for three-dimensional memory arrays

Номер патента: US20230397422A1. Автор: David H. Wells,Yoshiaki Fukuzumi,Byeung Chul Kim,Paolo Tessariol,Richard J. Hill. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Structures and methods for reducing stress in three-dimensional memory device

Номер патента: US20210050446A1. Автор: Jian Hua SUN,Ji XIA,Sizhe Li,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-02-18.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US12136599B2. Автор: He Chen,Yi Zhao,Shu Wu,Siping Hu,Ziqun HUA,Zhen Pan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US20220293533A1. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240063140A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-22.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US11901313B2. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

Three-dimensional memory devices with support structures and methods for forming the same

Номер патента: US12058865B2. Автор: Zhong Zhang,Wenxi Zhou,Yuhui HAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Microelectronic devices including stack structures having air gaps, and related memory devices, electronic systems, and methods

Номер патента: US12052862B2. Автор: Byeung Chul Kim,Shyam Surthi. Владелец: Micron Technology Inc. Дата публикации: 2024-07-30.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US20220037267A1. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-02-03.

Staircase structures for accessing three-dimensional memory arrays

Номер патента: US20240021521A1. Автор: Yiping Wang,Collin Howder,Harsh Narendrakumar Jain,Martin Jared Barclay. Владелец: Micron Technology Inc. Дата публикации: 2024-01-18.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240292622A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-29.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11991880B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-21.

Circuit structure for testing through silicon vias in three-dimensional integrated circuit

Номер патента: US11749648B2. Автор: Chun-Cheng Chen,Chun-Lin Lu,Shou-Zen Chang. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2023-09-05.

Microelectronic devices including contact structures, and related memory devices, electronic systems, and methods

Номер патента: EP4417026A1. Автор: Fatma Arzum Simsek-Ege. Владелец: Micron Technology Inc. Дата публикации: 2024-08-21.

Three-dimensional memory devices and system having the same

Номер патента: US20240206164A1. Автор: Han Yang,Lei Zhang,Zongliang Huo,Wenbin Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11935862B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-19.

Three-dimensional memory device with separated contact regions and methods for forming the same

Номер патента: US11996153B2. Автор: Hiroyuki Ogawa,James Kai,Yuki Mizutani,Masaaki Higashitani,Hisakazu Otoi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-28.

Conductive paste and method for producing ceramic substrate using the same

Номер патента: US6080335A. Автор: Yoshiki Nakagawa,Kazuhito Ohshita. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2000-06-27.

Three-dimensional memory devices having hydrogen blocking layer and fabrication methods thereof

Номер патента: US11728236B2. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-15.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: EP4362624A3. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-16.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240334690A1. Автор: Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-03.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20200395376A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Multi-deck three-dimensional memory devices and methods for forming the same

Номер патента: EP3867954A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Multi-stack three-dimensional memory devices and methods for forming the same

Номер патента: EP3867952A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

Номер патента: US12052865B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Multi-division staircase structure of three-dimensional memory device and method for forming the same

Номер патента: US20210351200A1. Автор: Yuting Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-11.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240224526A1. Автор: Zhiliang Xia,Zhong Zhang,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-04.

Methods for forming three-dimensional memory devices with backside source contacts

Номер патента: US12048151B2. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory device, memory system, and methods for forming the same

Номер патента: US20240032288A1. Автор: Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-25.

Three-dimensional memory devices having transferred interconnect layer and methods for forming same

Номер патента: EP3867953A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Three-dimensional memory devices having transferred interconnect layer and methods for forming same

Номер патента: WO2020124879A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-06-25.

Three-dimensional memory device with backside source contact

Номер патента: EP4401139A2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

Three-dimensional memory devices

Номер патента: US20210375913A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12113037B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-08.

Three-dimensional memory device with backside source contact

Номер патента: EP4401139A3. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-16.

Three-dimensional memory device with backside source contact

Номер патента: US12136618B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12069854B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-20.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US11925019B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-05.

Memory devices and related electronic systems

Номер патента: US20240170427A1. Автор: Fatma Arzum Simsek-Ege,Yuan He. Владелец: Micron Technology Inc. Дата публикации: 2024-05-23.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240064978A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-22.

Three-dimensional memory devices

Номер патента: WO2024178583A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-09-06.

Three-dimensional memory devices

Номер патента: US20240292629A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-29.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: US10714493B2. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbin Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-07-14.

Inter-deck plug in three-dimensional memory device and method for forming the same

Номер патента: US20200111807A1. Автор: Yong Zhang,Enbo Wang,Jialan He,Haohao YANG,Qianbin Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-04-09.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: EP4362624A2. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-01.

Inter-deck plug in three-dimensional memory device and method for forming same

Номер патента: EP3815133A1. Автор: Yong Zhang,Enbo Wang,Jialan He,Haohao YANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-05.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: WO2024118277A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: US20240179908A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240040789A1. Автор: XIN Wang,Wenshan Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-01.

Microelectronic devices including staircase structures, related memory devices, electronic systems, and methods

Номер патента: US20240164083A1. Автор: Yuichi Yokoyama. Владелец: Micron Technology Inc. Дата публикации: 2024-05-16.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: WO2023108330A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-06-22.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20220077283A1. Автор: Yang Zhou,Meng Xiao,ZHEN Guo,HUI Zhang,Jingjing Geng,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US11990506B2. Автор: Yang Zhou,Meng Xiao,ZHEN Guo,HUI Zhang,Jingjing Geng,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-21.

Resist compound for photolithography, method for forming the same, and method for manufacturing semiconductor devices using the same

Номер патента: US20240255849A1. Автор: JINKYUN Lee,Gayoung KIM,Yejin KU. Владелец: Inha University Research and Business Foundation. Дата публикации: 2024-08-01.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4285413A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-06.

Microelectronic devices including staircase structures, and related memory devices, electronic systems, and methods

Номер патента: US20240079057A1. Автор: Paolo Tessariol,Umberto Maria Meotto,Anna Maria Conti. Владелец: Micron Technology Inc. Дата публикации: 2024-03-07.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282004A1. Автор: Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

Three-dimensional memory device including discrete charge storage elements and methods of forming the same

Номер патента: US20220093644A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-03-24.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: US12133386B2. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20210167086A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Methods for forming three-dimensional memory devices with backside source contacts

Номер патента: US11963349B2. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Three-dimensional memory devices with stabilization structures between memory blocks and methods for forming the same

Номер патента: US12010834B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-11.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20230413541A1. Автор: Kun Zhang,Wenxi Zhou,Shuangshuang WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20200411545A1. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-31.

Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US11877449B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210098484A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-01.

Three-dimensional memory device containing heterojunction source layer and method for manufacturing the same

Номер патента: US20240268115A1. Автор: Xiang Yang,Wei Cao,Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-08.

Methods for forming three-dimensional memory device having channel structures with native oxide layer

Номер патента: WO2020073158A1. Автор: LEI Jin,Hongtao Liu,Qiguang Wang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-04-16.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: US12033966B2. Автор: He Chen,LIANG XIAO,Yongqing Wang,Shu Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: EP4454434A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-30.

Microelectronic devices including staircase structures, and related memory devices, electronic systems, and methods

Номер патента: US20210265371A1. Автор: Lifang Xu,Nancy M. LOMELI,Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2021-08-26.

Microelectronic devices, related electronic systems, and methods of forming microelectronic devices

Номер патента: US11916032B2. Автор: Fatma Arzum Simsek-Ege,Yuan He. Владелец: Micron Technology Inc. Дата публикации: 2024-02-27.

Three-dimensional memory devices and methods for forming the same

Номер патента: WO2023272578A1. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-01-05.

Three-dimensional memory device and method for forming the same

Номер патента: US20230413570A1. Автор: WEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210242233A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-05.

Multi-junction solar cells and methods and apparatuses for forming the same

Номер патента: WO2008089043A2. Автор: Soo-Young Choi,Shuran Sheng,Yong-Kee Chae. Владелец: Applied Materials, Inc.. Дата публикации: 2008-07-24.

Multi-junction solar cells and methods and apparatuses for forming the same

Номер патента: EP2104955A2. Автор: Soo-Young Choi,Shuran Sheng,Yong-Kee Chae. Владелец: Applied Materials Inc. Дата публикации: 2009-09-30.

Three-dimensional memory device comprising contact pads exposed by an opening passing through layer stack and fabrication method thereof

Номер патента: US12089406B2. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Three-dimensional memory and fabrication method thereof

Номер патента: US20220028890A1. Автор: Wei Xu,Pan Huang,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-27.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20220293627A1. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240188292A1. Автор: Zhiliang Xia,Di Wang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Shuangshuang WU,Cuicui Kong,Yuhui HAN,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-06.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215272A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240251564A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12063787B2. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357828A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Three-dimensional memory and method for manufacturing the same

Номер патента: US20160141300A1. Автор: Yi-Hsuan Hsiao,Wei-Chen Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2016-05-19.

Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof

Номер патента: US09978766B1. Автор: Takeshi Kawamura,Naohiro Hosoda,Kota Funayama,Yoko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-22.

Three-dimensional memory device without gate line slits and method for forming the same

Номер патента: US20200395375A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20210296351A1. Автор: Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-23.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240098994A1. Автор: Lei Li,Zhiliang Xia,Kun Zhang,Linchun Wu,Zongliang Huo,Shuangshuang WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-21.

Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

Номер патента: US20240074170A1. Автор: Takashi Yuda,Ippei Yasuda,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-29.

Three dimensional memory array architecture

Номер патента: EP2891182A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2015-07-08.

Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formation

Номер патента: US20240251551A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Method for forming semiconductor structure and method for forming memory using the same

Номер патента: US8383480B1. Автор: Chih-Hung Lin,Chih-Ming Wang,Ping-Chia Shih,Chi-Cheng Huang,Hsiang-Chen Lee. Владелец: United Microelectronics Corp. Дата публикации: 2013-02-26.

Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same

Номер патента: US20090159952A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: Individual. Дата публикации: 2009-06-25.

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Номер патента: US20080017915A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Three-dimensional memory device and method

Номер патента: US20240284679A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

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Номер патента: US20240107757A1. Автор: Jia He,Zhiliang Xia,Zongliang Huo,Baoyou Chen,Yaohua Yang,Qingchen CAO,Yaobin FENG,Fandong LIU,Peizhen Hong,Haihui Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-28.

Openings layout of three-dimensional memory device

Номер патента: US11903195B2. Автор: Jia He,Zhiliang Xia,Zongliang Huo,Baoyou Chen,Yaohua Yang,Qingchen CAO,Yaobin FENG,Fandong LIU,Peizhen Hong,Haihui Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: EP4218056A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-02.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215271A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Substrate attachment device of display device and method for manufacturing display device using the same

Номер патента: US8992278B2. Автор: Youngjo Ko. Владелец: LG Display Co Ltd. Дата публикации: 2015-03-31.

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Номер патента: US20210118891A1. Автор: Bo Xu,Lei DING,Chuan Yang,Ping Yan,Sen Zhang,Jing Gao,Lan Fang YU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-22.

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Номер патента: US20190148401A1. Автор: Ding Lei,Bo Xu,Chuan Yang,Ping Yan,Sen Zhang,Jing Gao,Lan Fang YU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-05-16.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210104547A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

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Номер патента: US20200312870A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof

Номер патента: US12016179B2. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-18.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240196616A1. Автор: Tomohiro Kubo,Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US20200312872A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Nonvolatile memory device and method of processing in memory (pim) using the same

Номер патента: US20210183446A1. Автор: Se-Hwan Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-17.

Transparent electrically - conductive solid material, and method and composition for forming transparent electrically - conductive solid material

Номер патента: WO2013175227A1. Автор: Andrew Archibald Ronald Watt,Maria NELSON. Владелец: ISIS INNOVATION LIMITED. Дата публикации: 2013-11-28.

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Номер патента: WO2024108427A1. Автор: Zhiliang Xia,Jing Gao,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-30.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240170424A1. Автор: Zhiliang Xia,Jing Gao,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Номер патента: US20210050371A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Seung-Yeul Yang,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Three-dimensional memory device having parallel trench type capacitor and a method of manufacturing the three-dimensional memory device

Номер патента: US20220149052A1. Автор: Won Seok Kim. Владелец: SK hynix Inc. Дата публикации: 2022-05-12.

Three-dimensional memory device and method

Номер патента: US11856781B2. Автор: Sheng-Chih Lai,Hung-Chang Sun,Yu-Wei Jiang,TsuChing Yang,Kuo Chang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20240114690A1. Автор: Sheng-Chih Lai,Hung-Chang Sun,Yu-Wei Jiang,TsuChing Yang,Kuo Chang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Three-dimensional memory device having parallel trench type capacitor

Номер патента: US11690233B2. Автор: Won Seok Kim. Владелец: SK hynix Inc. Дата публикации: 2023-06-27.

Semiconductor integrated circuit device in which integrated circuit units having different functions are stacked in three dimensional manner

Номер патента: US5138437A. Автор: Shinichi Nakagawa,Masao Nakaya,Toshio Kumamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 1992-08-11.

Three-dimensional memory structure and manufacturing method thereof

Номер патента: US20190157287A1. Автор: Zongliang Huo,Wenbin Zhou,Deqin Yu,Yong Hui Gao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-05-23.

Three-dimensional memory device erase operation

Номер патента: US20220293626A1. Автор: Feng Xu,LEI Jin,Jie Yuan,Shiyu Xia,Wenqiang CHEN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Three-dimensional memory device erase operation

Номер патента: US11521988B2. Автор: Feng Xu,LEI Jin,Jie Yuan,Shiyu Xia,Wenqiang CHEN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-12-06.

Optical measurement apparatus, optical measurement method using the same, and method for manufacturing semiconductor device using the same

Номер патента: US20240219314A1. Автор: Young Hoon Sohn,Min Ho Rim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Adhesive sheet for temporary attachment and method for producing semiconductor device using the same

Номер патента: US12065595B2. Автор: Kwang Joo Lee,Mi Jang,Sera Kim,Ji Ho HAN. Владелец: LG Chem Ltd. Дата публикации: 2024-08-20.

Fingerprint image sensor and method for optical wireless communications using the same

Номер патента: US09971921B2. Автор: Weiping Lin,Hong Zhu. Владелец: Shanghai Oxi Technology Co Ltd. Дата публикации: 2018-05-15.

Underfill material and method for manufacturing semiconductor device using the same

Номер патента: US09957411B2. Автор: Takayuki Saito,Taichi Koyama,Hironobu Moriyama. Владелец: Dexerials Corp. Дата публикации: 2018-05-01.

Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

Номер патента: US20230328984A1. Автор: Takashi Kudo,Satoshi Shimizu,Nobuyuki Fujimura,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: WO2022120630A1. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-06-16.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215241A1. Автор: QIAN LI,LIANG XIAO,Shu Wu,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Apparatus for separating a window and method for separating a window using the same

Номер патента: US20210070030A1. Автор: Jinwook Yang,Chang-Mo Park,Heechang Kim,Soyeon Eom,Jongman Bae. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-03-11.

Method for inkjet printing and method for manufacturing display device using the same

Номер патента: US20230011658A1. Автор: Ju Yong Kim,Kang Soo HAN,Gyeong Eun EOH,Ho Yong Shin,Jun Hwi LIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-01-12.

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Номер патента: US12113147B2. Автор: Ju Yong Kim,Kang Soo HAN,Gyeong Eun EOH,Ho Yong Shin,Jun Hwi LIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-10-08.

Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same

Номер патента: WO2019018050A1. Автор: Tong Zhang,James Kai,Takashi Orimoto,Johann Alsmeier,Shinsuke YADA,Akihisa SAI,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-24.

Method for forming channel hole plug of three-dimensional memory device

Номер патента: US11943928B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Meng Wang,Yushi Hu,Li Hong XIAO,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-26.

Cache program operation of three-dimensional memory device with static random-access memory

Номер патента: EP3909048A1. Автор: Chun Yuan Hou,Yueping Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-17.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230422524A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

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Номер патента: US20230328981A1. Автор: Takashi Kudo,Satoshi Shimizu,Zhixin Cui,Nobuyuki Fujimura,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240170425A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2024108435A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-30.

Three-dimensional memory device and fabrication method for improved yield and reliability

Номер патента: US20240179901A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Yuhui HAN,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-30.

Three-dimensional memory device

Номер патента: US20240334699A1. Автор: Chanho Kim,Kyunghwa Yun,Younghak Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Apparatus for inspecting substrate and method for fabricating semiconductor device using the same

Номер патента: US12105027B2. Автор: Myung Jun Lee,Sung Ho Jang,Jang Ryul Park,Kwang Rak KIM,Soon Yang KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-01.

Self-aligned isolation dielectric structures for a three-dimensional memory device

Номер патента: US09859363B2. Автор: Zhenyu Lu,Daxin Mao,Chun-Ming Wang,Makoto Yoshida,Tong Zhang,Johann Alsmeier,Jixin Yu,Kota Funayama,Chenche Huang,Lauren MATSUMOTO. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230422520A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Dongxue Zhao,Dongyu FAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Device and method of forming with three-dimensional memory and three-dimensional logic

Номер патента: US20210111183A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2021-04-15.

Method of mass-spectrometric analysis of ions in three-dimensional ion trap and device for its implementation

Номер патента: RU2650497C2. Автор: Олег Васильевич Рожков,Виктор Анатольевич Пушкин,Евгений Владимирович Свадковский. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет". Дата публикации: 2018-04-16.

Spatially distributed SMA actuator film providing unrestricted movement in three dimensional space

Номер патента: US5405337A. Автор: Ronald S. Maynard. Владелец: Leland Stanford Junior University. Дата публикации: 1995-04-11.

Battery separator, battery including the separator, and method and system for forming same

Номер патента: EP4022112A1. Автор: William Winchin YEN. Владелец: Individual. Дата публикации: 2022-07-06.

Protective cover for a 5G wireless telecommunications device and methods for reducing signal attenuation using the same

Номер патента: US12068772B2. Автор: Richard Holman,Piriya Sugumaar. Владелец: Design Blue Ltd. Дата публикации: 2024-08-20.

Fuel cell vehicle and method for controlling power generation for the same

Номер патента: US12119522B2. Автор: Jae Hoon Jeong,Hyo Jun Kim,Seung Yoon Lee,Jeong Kyu Park,Sae Byeok Seung,Sang Chul Yeom. Владелец: Kia Motors Corp. Дата публикации: 2024-10-15.

Apparatus for Manufacturing Secondary Battery and Method for Manufacturing Secondary Battery Using the Same

Номер патента: US20240274862A1. Автор: Eun Ji Song,Ki Beom Park,Eui Seob SONG,Zheng Hua LI,Hyo Joon Lee,Min Ha YEE. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-08-15.

LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

Номер патента: EP2767613A3. Автор: Nobuyuki Soyama,Jun Fujii,Hideaki Sakurai. Владелец: Mitsubishi Materials Corp. Дата публикации: 2015-06-17.

Method for testing secondary battery and method for manufacturing secondary battery including the same

Номер патента: US20220205957A1. Автор: Se Woong JUNG,Chae Myong Ryu,Kil Suk Kim. Владелец: Innoray Co Ltd. Дата публикации: 2022-06-30.

Method for testing secondary battery and method for manufacturing secondary battery including the same

Номер патента: US12044656B2. Автор: Se Woong JUNG,Chae Myong Ryu,Kil Suk Kim. Владелец: Innoray Co Ltd. Дата публикации: 2024-07-23.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: US12133385B2. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process

Номер патента: US20240260275A1. Автор: Usha Raghuram,Jie Zhou,Kavita Shah,Eli Harari,Shohei KAMISAKA,Yosuke Nosho,Iting Lin. Владелец: Sunrise Memory Corp. Дата публикации: 2024-08-01.

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Номер патента: US20230282281A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory device with discrete charge storage elements and methods for forming the same

Номер патента: US12029037B2. Автор: Yuki KASAI,Yusuke Mukae,Masanori Tsutsumi,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-02.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20240196619A1. Автор: Ryo KAMBAYASHI,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Contact structures for three-dimensional memory device

Номер патента: US11910599B2. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-20.

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Номер патента: US20210058473A1. Автор: Cevat Yerli. Владелец: TMRW Foundation IP and Holding SARL. Дата публикации: 2021-02-25.

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Номер патента: EP3783863A1. Автор: Cevat Yerli. Владелец: TMRW Foundation IP and Holding SARL. Дата публикации: 2021-02-24.

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Номер патента: EP4456571A2. Автор: Cevat Yerli. Владелец: Calany Holding SARL. Дата публикации: 2024-10-30.

Device and method for detecting the orientation and position of markings in three-dimensional space

Номер патента: US12075149B2. Автор: Laurent Gilson,Wolfgang Bruening,Frank HONISCH. Владелец: Soft2tec GmbH. Дата публикации: 2024-08-27.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: WO2024123438A1. Автор: Hiroyuki Ogawa,Takaaki IWAI,Masahiro Yaegashi,Akihiro Tobioka,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device containing composite dielectric isolation structure in a staircase region and methods of forming the same

Номер патента: US20240334695A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three-dimensional memory device containing composite dielectric isolation structure in a staircase region and methods of forming the same

Номер патента: WO2024205705A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Akihiro Tobioka,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Systems and Methods for Improving Compression of Structured Data in Three-Dimensional Applications

Номер патента: US20240275404A1. Автор: Sherry IGNATCHENKO. Владелец: Six Impossible Things Before Breakfast Ltd. Дата публикации: 2024-08-15.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: WO2016167984A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-20.

Systems and methods for improving compression of structured data in three-dimensional applications

Номер патента: WO2024171025A1. Автор: Sherry IGNATCHENKO. Владелец: Six Impossible Things Before Breakfast Limited. Дата публикации: 2024-08-22.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US12131794B2. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-10-29.

Three-dimensional memory device with hybrid support structures and methods of making the same

Номер патента: US20240237345A1. Автор: ZHIWEI CHEN,Kazuyuki Iwata,Yusuke Ikawa,Kei Samura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory and manufacturing method therefor, and storage system

Номер патента: EP4440277A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Device for recording images in three-dimensional scale, method for formation of 3d-image and method for producing device for recording images in three dimensional scale

Номер патента: RU2668404C2. Автор: Ян-Фризо ЭВЕРС-ЗЕННЕ,Мартин ШТРАТМАНН,Патрик ЦАН. Владелец: Тесто АГ. Дата публикации: 2018-09-28.

Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same

Номер патента: US11877446B2. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device and method for forming the same

Номер патента: WO2023165379A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

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Номер патента: US20240206166A1. Автор: Shiwei HE,Hsien-Shih Chu,Yongjian Yu,Guoguo Kong,Canfa Dai,Detianyu Diao. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: WO2022216337A1. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-10-13.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: US11991881B2. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-21.

Selection of object in three-dimensional virtual dynamic display

Номер патента: RU2616884C2. Автор: Леонхард ФОГЕЛЬМАЙЕР,Давид ВИТТМАНН. Владелец: Эрбас Дифенс Энд Спейс Гмбх. Дата публикации: 2017-04-18.

Memory cell protective layers in a three-dimensional memory array

Номер патента: WO2024123561A2. Автор: Farrell M. Good. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-06-13.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: EP3262685A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Номер патента: WO2021025730A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-11.

Tunable diplexers in three-dimensional (3d) integrated circuits (ic) (3dic) and related components and methods

Номер патента: US20160204758A1. Автор: Je-Hsiung Lan,Xiangdong Zhang,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Puay H. See,Daeik D. KIM,David F. BERDY,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2016-07-14.

Three-dimensional memory and fabricating method thereof

Номер патента: US20230144830A1. Автор: YING Zhou,Ming Li,Zhenzhen Zhang,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12069871B2. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357838A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Method and apparatus of spatial motion vector prediction derivation for direct and skip modes in three-dimensional video coding

Номер патента: US09967586B2. Автор: Yi-Wen Chen,Jian-Liang Lin. Владелец: MediaTek Inc. Дата публикации: 2018-05-08.

Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods

Номер патента: US09813043B2. Автор: Je-Hsiung Lan,Xiangdong Zhang,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Puay H. See,Daeik D. KIM,David F. BERDY,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2017-11-07.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Three-dimensional memory device with a conductive drain-select-level spacer and methods for forming the same

Номер патента: US12010835B2. Автор: Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-11.

Connection region between adjacent memory arrays for three-dimensional memory device with terrace regions and method of making thereof

Номер патента: EP3631856A1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-08.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US20240071465A1. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Method for generating free viewpoint video image in three-dimensional movement and recording medium

Номер патента: US20100026788A1. Автор: Atsushi Koike,Akio Ishikawa,Shigeyuki Sakazawa. Владелец: KDDI Corp. Дата публикации: 2010-02-04.

Device and method for detecting the orientation and position of markings in three-dimensional space

Номер патента: US20230269455A1. Автор: Laurent Gilson,Wolfgang Bruening,Frank HONISCH. Владелец: Soft2tec GmbH. Дата публикации: 2023-08-24.

Method for generating free viewpoint video image in three-dimensional movement and recording medium

Номер патента: US8259160B2. Автор: Atsushi Koike,Akio Ishikawa,Shigeyuki Sakazawa. Владелец: KDDI Corp. Дата публикации: 2012-09-04.

Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

Номер патента: US20240064985A1. Автор: Peng Zhang,Masanori Tsutsumi,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

Three-dimensional memory device including trench bridges and methods of forming the same

Номер патента: WO2024035487A1. Автор: Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-15.

Three-dimensional memory device with dielectric or semiconductor wall support structures and method of forming the same

Номер патента: US11963354B2. Автор: Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-16.

Three-dimensional memory device containing laterally-undulating lateral isolation trenches and methods of forming the same

Номер патента: US20240064983A1. Автор: Tomohiro Kubo,Takashi Kashimura,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

Multiple transistor architecture for three-dimensional memory arrays

Номер патента: US12119056B2. Автор: Ferdinando Bedeschi. Владелец: Micron Technology Inc. Дата публикации: 2024-10-15.

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

Номер патента: WO2023163740A1. Автор: Kazuto Watanabe,Koichi Matsuno,Kota Funayama,Youko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Method and apparatus of spatial motion vector prediction derivation for direct and skip modes in three-dimensional video coding

Номер патента: EP2941867A1. Автор: Yi-Wen Chen,Jian-Liang Lin. Владелец: MediaTek Inc. Дата публикации: 2015-11-11.

Improvements in three dimensional imagery

Номер патента: LV11503B. Автор: Martin Donald Lewis Maunsell. Владелец: Trutan Pty Ltd. Дата публикации: 1996-12-20.

Method of determining an optimal point in three-dimensional space

Номер патента: US20160212395A1. Автор: Ming-Der Shieh,Tzung-Ren Wang,Ching-Heng Su. Владелец: NCKU Research and Development Foundation. Дата публикации: 2016-07-21.

Three-dimensional memory device with vertical semiconductor channels having semi-tubular sections at the drain-select-level and methods for making the same

Номер патента: WO2020163007A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,Tomohiro Kubo,James Kai,Takaaki IWAI,Masanori Tsutsumi,Sayako Nagamine,Ching-Huang Lu,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

Tunable diplexers in three-dimensional (3d) integrated circuits (ic) (3dic) and related components and methods

Номер патента: US20140327496A1. Автор: Je-Hsiung Lan,Xiangdong Zhang,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Puay H. See,Daeik D. KIM,David F. BERDY,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2014-11-06.

Tunable diplexers in three-dimensional (3d) integrated circuits (ic) (3dic) and related components and methods

Номер патента: EP2995002A1. Автор: Je-Hsiung Lan,Xiangdong Zhang,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Puay H. See,Daeik D. KIM,David F. BERDY,Robert P. MIKULKA,Matthew M. Nowak. Владелец: Qualcomm Inc. Дата публикации: 2016-03-16.

Tunable diplexers in three-dimensional (3d) integrated circuits (ic) (3dic) and related components and methods

Номер патента: WO2014182556A1. Автор: Je-Hsiung Lan,Xiangdong Zhang,Changhan Yun,Chengjie Zuo,Jonghae Kim,Mario Francisco Velez,Puay H. See,Daeik D. KIM,David F. BERDY,Robert P. MIKULKA,Matthew M. Nowak. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-11-13.

Three-dimensional memory array and operation scheme

Номер патента: US20140160836A1. Автор: Chung H. Lam,Sangbum Kim. Владелец: International Business Machines Corp. Дата публикации: 2014-06-12.

Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

Номер патента: US20240172439A1. Автор: Wei Xu,QI Hao,BIN Yuan,Zongke Xu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Offset backside contact via structures for a three-dimensional memory device

Номер патента: EP3420590A1. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-02.

Three-dimensional memories, manufacturing methods thereof, and memory systems

Номер патента: US20240365544A1. Автор: Jie Yuan,Yali SONG,Quanshan Lv. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-31.

Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the same

Номер патента: WO2020068184A1. Автор: Masatoshi Nishikawa,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-02.

Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same

Номер патента: US11968825B2. Автор: Yanli Zhang,Zhen Chen. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Memory cell protective layers in a three-dimensional memory array

Номер патента: US20240188308A1. Автор: Farrell M. Good. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: US20240312521A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2024-09-19.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: WO2024191628A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-09-19.

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Номер патента: EP3695439A1. Автор: Yanli Zhang,Masatoshi Nishikawa,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-19.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230337436A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Three-dimensional memory array formation techniques

Номер патента: US20240188299A1. Автор: Wenjie Li,George Matamis,Christopher J. Larsen,S M Istiaque Hossain,Lingyu Kong,David A. Daycock,Sok Han Wong,Kevin R. Gast,Lhaang Chee Ooi. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Three-dimensional memory and control method thereof

Номер патента: US11864379B2. Автор: LEI Jin,Jianquan Jia,Yali SONG,XiangNan Zhao,Yuanyuan MIN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-02.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130120A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: US20240357794A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: Micron Technology Inc. Дата публикации: 2024-10-24.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: WO2024226340A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-10-31.

Neuromorphic computing device with three-dimensional memory

Номер патента: US20230385625A1. Автор: Yih Wang,Chia-En HUANG,Wen-Chang Cheng,Chieh Lee,Yi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Redundant array of independent NAND for a three-dimensional memory array

Номер патента: US11797383B2. Автор: Jung Sheng Hoei,Peter Feeley,Kishore K. Muchherla,Sampath K. Ratnam,Sivagnanam Parthasarathy,Renato C. Padilla. Владелец: Micron Technology Inc. Дата публикации: 2023-10-24.

Three-dimensional memory and manufacturing method thereof

Номер патента: US20230140992A1. Автор: Wei Xu,Ming Zeng,Qingqing WANG,Jianlu Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Integrated Neuro-Processor Comprising Three-Dimensional Memory Array

Номер патента: US20170270403A1. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2017-09-21.

Sprue fixing block for warks comprising many parts and method and apparatus for forming and destructing the same

Номер патента: JPS61123443A. Автор: ハインリツヒ・ムスハルト,ウーウエ・ウーリツヒ,ラルフ・ブライツヒ. Владелец: Hauni Werke Koerber and Co KG. Дата публикации: 1986-06-11.

Integrated control device and integrated control method for vehicle and system with the same

Номер патента: CN113734149A. Автор: 赵在成,金显秀,蔡旻知,玄玟帝. Владелец: Kia Motors Corp. Дата публикации: 2021-12-03.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20230276620A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4391762A2. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-26.

Concentric staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US11849575B2. Автор: Zhong Zhang,Kun Zhang,Wenxi Zhou,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-19.

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Номер патента: US12048148B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Source structure of three-dimensional memory device and method for forming the same

Номер патента: EP4258843A3. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-07.

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Номер патента: US12075621B2. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-27.

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Номер патента: US12058857B2. Автор: Lichuan Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Three-dimensional memory devices

Номер патента: EP3942611A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-26.

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Номер патента: US12052871B2. Автор: Wei Xu,Pan Huang,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

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Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US12089405B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Methods for forming three-dimensional memory devices, and related structures

Номер патента: US20120199987A1. Автор: Nishant Sinha,Krishna K. Parat. Владелец: Micron Technology Inc. Дата публикации: 2012-08-09.

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Номер патента: US20240306386A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

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Номер патента: WO2024186381A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

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Номер патента: US20240268111A1. Автор: Pi-Shan Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-08.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US11917823B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-27.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260267A1. Автор: Takashi Kudo,Ryota Suzuki,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

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Номер патента: WO2024158467A1. Автор: Hiroyuki Tanaka,Takashi Kudo,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Nobuyuki Fujimura,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-02.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240172429A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206167A1. Автор: SHENG Peng,Jing Gao,Kai Yu,Wenbo Zhang,Lei Xue,Zhaohui Cheng,Zhiyong Lu,Zhangyi LI. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

Номер патента: US20240237344A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan,Sarath Puthenthermadam,Longju LIU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Methods and systems for realizing reduced complexity in three-dimensional digitizer systems

Номер патента: WO2012018989A2. Автор: Ivan Faul,Dennis Toms. Владелец: Boulder Innovation Group Inc.. Дата публикации: 2012-02-09.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240244844A1. Автор: Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

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Номер патента: US20240260266A1. Автор: Hiroyuki Tanaka,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Methods for forming three-dimensional memory devices

Номер патента: US11877448B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory device without gate line slits and method for forming the same

Номер патента: US11963356B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Three-dimensional memory device containing insulated gate located over a top source layer for applying gidl erase voltage and method for manufacturing the same

Номер патента: US20240292616A1. Автор: Satoshi Shimizu,Takaaki IWAI,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-29.

Pickup of objects in three-dimensional display

Номер патента: US09961335B2. Автор: Lin Du,Hongjiang Zhang,Kuifei Yu. Владелец: Beijing Zhigu Ruituo Technology Services Co Ltd. Дата публикации: 2018-05-01.

Methods for forming three-dimensional memory devices

Номер патента: WO2021237881A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2021-12-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11839079B2. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-05.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20230292511A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-14.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282003A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

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Номер патента: WO2022246789A1. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-12-01.

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Номер патента: EP4258843A2. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-11.

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Номер патента: US11765892B2. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Bo-Feng YOUNG,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

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Номер патента: US11805650B2. Автор: Wei Xu,Pan Huang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

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Номер патента: US20240224517A1. Автор: Yang Chen,Zhiliang Xia,Di Wang,Qingfu Zhang,Zongliang Huo,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-04.

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Номер патента: US20240134573A1. Автор: Xiang Ming ZHI,Augustus TSAI. Владелец: Yangtze Memory Technologies Inc. Дата публикации: 2024-04-25.

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Номер патента: EP4432802A1. Автор: Young Wook Park,Jin Ho Ahn. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-09-18.

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Номер патента: WO2021173298A1. Автор: Lifang Xu,Nancy M. LOMELI,Shuangqiang Luo. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-09-02.

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Номер патента: US20240237350A1. Автор: Bing Zhou,Senaka Kanakamedala,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

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Номер патента: US11983439B2. Автор: Xiang Ming ZHI,Augustus TSAI. Владелец: Yangtze Memory Technologies Inc. Дата публикации: 2024-05-14.

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Номер патента: US20240164100A1. Автор: LIANG XIAO,Yi Zhao,Shu Wu,Wenbin Zhou,Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11950419B2. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-02.

Input/output reference voltage training method in three-dimensional memory devices

Номер патента: US20240079054A1. Автор: Yan Lu,Xiang FU,Ling Ding,Shiyang Yang,Chunfei Deng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-07.

Input/output reference voltage training method in three-dimensional memory devices

Номер патента: EP4332967A1. Автор: Yan Lu,Xiang FU,Ling Ding,Shiyang Yang,Chunfei Deng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-06.

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Номер патента: EP4205175A1. Автор: LIANG Chen,WEI Liu,Shiqi HUANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-07-05.

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Номер патента: US20240215243A1. Автор: Tomohiro Kubo,Masato Miyamoto,Koichi Matsuno,Masanori Tsutsumi,Takumi Moriyama,Michio Oryoji,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: US20240276725A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: US12133388B2. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-29.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A3. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-14.

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Номер патента: EP4290998A2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

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Номер патента: WO2023018456A3. Автор: Hiroyuki Ogawa,James Kai,Zhixin Cui,Fumiaki TOYAMA,Yuki Mizutani,Masaaki Higashitani,Hardwell Chibvongodze,Hisakazu Otoi,Rajdeep Gautam. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-06-08.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: US20240196610A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device and fabrication method thereof

Номер патента: EP3912188A1. Автор: Linchum WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-24.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device containing discrete charge storage elements and methods for forming the same

Номер патента: US20240121960A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-11.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206176A1. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215273A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

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Номер патента: US09961247B2. Автор: Sung-Il Park,Stella Park,Seong-Tae JANG,Ji-Ye Song. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-05-01.

Media device and method for setting a configuration of the same

Номер патента: US20170339244A1. Автор: Jeong Kyu Kim. Владелец: Humax Co Ltd. Дата публикации: 2017-11-23.

Light radiation device and method for fabricating display device using the same

Номер патента: US20140374006A1. Автор: Yun Heum PARK. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-12-25.

Methods and Systems for Realizing Reduced Complexity in Three-Dimensional Digitizer Systems

Номер патента: US20120086953A1. Автор: Ivan Faul,Dennis Toms. Владелец: Boulder Innovation Group Inc. Дата публикации: 2012-04-12.

Charging-discharging system and method for diagnosing faulty wiring for the same

Номер патента: EP4418489A2. Автор: Chen Han,Qing Li,Dongyu LIANG,Wengong DONG,Qiangdong CHEN,Xuteng LI. Владелец: Sungrow Energy Storage Technology Co Ltd. Дата публикации: 2024-08-21.

Image forming device and method for processing image data using the same and system for transmission of image data

Номер патента: US20060268291A1. Автор: Young-ho Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-11-30.

Charging-discharging system and method for diagnosing faulty wiring for the same

Номер патента: AU2023270276A1. Автор: Li Qing,Han Chen,Liang Dongyu,CHEN Qiangdong,DONG Wengong,LI Xuteng. Владелец: Sungrow Energy Storage Technology Co Ltd. Дата публикации: 2024-09-05.

Virtual input device and method for receiving user input using the same

Номер патента: US09933854B2. Автор: Barath Raj KANDUR RAJA,Wan Seok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-03.

Feedback device and method for providing thermal feedback using the same

Номер патента: US12102452B2. Автор: Kyoungsoo YI,Ockkyun OH. Владелец: Tegway Co Ltd. Дата публикации: 2024-10-01.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20240251558A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-25.

Method for transmitting signals, method for allocating resource and method for constructing uplink map for the same

Номер патента: WO2009002134A3. Автор: Jae Won Lim,Hee Jeong Cho,Ki Seon Ryu,Yong Ho Kim,Jeong Ki Kim. Владелец: Jeong Ki Kim. Дата публикации: 2009-03-12.

Method for allocating priority to resource and method and apparatus for operating resource using the same

Номер патента: US8706149B2. Автор: Jeoung Lak HA. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2014-04-22.

Three-dimensional memory device

Номер патента: EP4428861A1. Автор: Changyeon Yu,Pansuk Kwak,Sungun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-11.

Three-dimensional memory device

Номер патента: US20240306394A1. Автор: Changyeon Yu,Pansuk Kwak,Sungun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

Apparatus for controlling motor for electric vehicle and method for reducing torque ripple using the same

Номер патента: US20140062350A1. Автор: Junyoung Lim,Seungdo Han,Hokyoung Lim,Yongboong KIM. Владелец: LG ELECTRONICS INC. Дата публикации: 2014-03-06.

Cloud server, edge server and method for generating intelligence model using the same

Номер патента: US20230077103A1. Автор: Jae-Hong Kim,Do-Hyung Kim,Min-Su JANG,Woo-Han Yun. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-03-09.

Broadcast receiver for displaying explanation of terminology included in digital caption and method for processing digital caption using the same

Номер патента: EP2164250B1. Автор: Sang-Hee Lee,Yeo-Ri Yoon,Yong-Hwan Kwon,Won-il Kim,Jeong-yeon Lee,Woo-seok HWANG,Mi-ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-11-02.

Broadcast receiver for displaying explanation of terminology included in digital caption and method for processing digital caption using the same

Номер патента: US20100071002A1. Автор: Sang-Hee Lee,Yeo-Ri Yoon,Yong-Hwan Kwon,Won-il Kim,Jeong-yeon Lee,Woo-seok HWANG,Mi-ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-03-18.

Mobile apparatus including template based flash image generation function and method for generating flash image using the same

Номер патента: EP2059874A1. Автор: Young Muk Cha. Владелец: MOBIDERS Inc. Дата публикации: 2009-05-20.

Motor controller, active short circuit thereof, and method for controlling active short via the same

Номер патента: US11177751B2. Автор: Yang Min,Wenjie Chen. Владелец: Sungrow Power Supply Co Ltd. Дата публикации: 2021-11-16.

Embedded system, fast structured light based 3d camera system and method for obtaining 3d images using the same

Номер патента: US20230024006A1. Автор: ATIF Muhammad,Suk-han Lee,Kuk-jin HAN. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-01-26.

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Номер патента: US20190200005A1. Автор: ATIF Muhammad,Suk-han Lee,Kuk-jin HAN. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2019-06-27.

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Номер патента: US12058247B2. Автор: Dae Hyun Nam,Jung Hyun Baik,Seong Joon Cho,Bu Suk JEONG,Kang Won SUH. Владелец: Eyl Inc. Дата публикации: 2024-08-06.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023246210A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Three-dimensional memory device containing self-aligned ferroelectric memory elements and method of making the same

Номер патента: US20240130137A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

Method, system and computer program product for providing navigation assistance in three-dimensional virtual environments

Номер патента: EP4286995A1. Автор: Robert Black. Владелец: TMRW Foundation IP SARL. Дата публикации: 2023-12-06.

Method and system for providing navigation assistance in three-dimensional virtual environments

Номер патента: US20230381670A1. Автор: Robert Harry Black. Владелец: TMRW Foundation IP SARL. Дата публикации: 2023-11-30.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: WO2023146568A1. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-03.

Sata host bus adapter using optical signal and method for connecting sata storage using the same

Номер патента: US20160365924A1. Автор: Yong-Seok Choi,Hyuk-Je Kwon. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2016-12-15.

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Номер патента: US20210297239A1. Автор: Joon-Young Park,Ki-Young Kim,Jin-Tae Oh. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-09-23.

Embedded system, fast structured light based 3D camera system and method for obtaining 3D images using the same

Номер патента: US10200679B2. Автор: ATIF Muhammad,Suk-han Lee,Kuk-jin HAN. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2019-02-05.

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Номер патента: US20120000380A1. Автор: Tetsuya Tanaka,Kunihiko Tokita. Владелец: Panasonic Corp. Дата публикации: 2012-01-05.

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Номер патента: WO2023246209A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Dongxue Zhao,Dongyu FAN. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Three-dimensional memory device and method of manufacture

Номер патента: US20230413544A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Bo-Feng YOUNG,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

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Номер патента: WO2024123475A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

System and method for automatic planning of two-dimensional views in three-dimensional medical images

Номер патента: RU2526752C1. Автор: Михаил Николаевич Рычагов,Алексей Брониславович Данилевич,Михаил Юрьевич Сиротенко,Дмитрий Александрович Коробченко,Правин Гулака. Владелец: Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд.". Дата публикации: 2014-08-27.

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Номер патента: US20210406414A1. Автор: Wei Cai,BO Wang,Wenzhong Zhang. Владелец: SOUTHERN METHODIST UNIVERSITY. Дата публикации: 2021-12-30.

Computing interactions of sources embedded in three dimensional layered media

Номер патента: US12073149B2. Автор: Wei Cai,BO Wang,Wenzhong Zhang. Владелец: SOUTHERN METHODIST UNIVERSITY. Дата публикации: 2024-08-27.

Systems and methods for error reduction in three-dimensional (3d) printing

Номер патента: US20240173924A1. Автор: HUI Wang,An-Tsun Wei. Владелец: Florida State University Research Foundation Inc. Дата публикации: 2024-05-30.

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Номер патента: US09927604B2. Автор: M. Umit Uyar,Stephen Gundry. Владелец: Research Foundation Of City University of New York. Дата публикации: 2018-03-27.

Selective reshaping of nanoparticles in three dimensional articles

Номер патента: US11993720B1. Автор: Richard A. Vaia,Kyoungweon Park,Clare M. Mahoney. Владелец: US Air Force. Дата публикации: 2024-05-28.

Selective reshaping of nanoparticles in three dimensional articles

Номер патента: US11680176B1. Автор: Richard A. Vaia,Kyoungweon Park,Clare M. Mahoney. Владелец: US Air Force. Дата публикации: 2023-06-20.

Device for forming a stereoscopic image in three-dimensional space with real objects

Номер патента: RU2664781C1. Автор: Николай Витальевич Кондратьев,Алексей Валентинович Кучеренко,Сергей Юрьевич Подлесный,Дмитрий Николаевич Сухов,Дмитрий Геннадьевич Чекалин. Владелец: Акционерное общество "Творческо-производственное объединение "Центральная киностудия детских и юношеских фильмов им. М. Горького" (АО "ТПО "Киностудия им. М. Горького"). Дата публикации: 2018-08-22.

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Номер патента: AU2019312721B2. Автор: Dhruv Kasavala,Sarma Aryasomayajula. Владелец: Individual. Дата публикации: 2024-09-19.

Computer-implemented method for modelling a projection of a scene in three-dimensional space into a composite image

Номер патента: WO2024132098A1. Автор: Grady JENSEN. Владелец: BRAINLAB AG. Дата публикации: 2024-06-27.

Selection of Data for Redundancy Calculation in Three Dimensional Nonvolatile Memory

Номер патента: US20140359400A1. Автор: Jian Chen,Man Mui,Gautam Dusija,Chris Avila,Yingda Dong,Seungpil Lee,Alex Mak. Владелец: SanDisk Technologies LLC. Дата публикации: 2014-12-04.

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Номер патента: US20140359398A1. Автор: Jian Chen,Chris Nga Yee Avila,Yingda Dong,Man Lung Mui,Seungpil Lee,Alexander Kwok-Tung Mak,Gautam Ashok Dusija. Владелец: SanDisk Technologies LLC. Дата публикации: 2014-12-04.

Selection of data for redundancy calculation in three dimensional nonvolatile memory

Номер патента: WO2014197144A1. Автор: Jian Chen,Chris Nga Yee Avila,Yingda Dong,Man Lung Mui,Seungpil Lee,Alexander Kwok-Tung Mak,Gautam Ashok Dusija. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2014-12-11.

Computer-implemented method for transforming a projection of a scene in three-dimensional space into a composite image

Номер патента: WO2024133213A1. Автор: Grady JENSEN. Владелец: BRAINLAB AG. Дата публикации: 2024-06-27.

Visualizing vector graphics in three-dimensional scenes

Номер патента: US20240249475A1. Автор: Ankit Phogat,Vineet Batra,Nathan Aaron Carr,Siddhartha Chaudhuri,Sumit Dhingra,Ashish Jindal. Владелец: Adobe Inc. Дата публикации: 2024-07-25.

Visualizing vector graphics in three-dimensional scenes

Номер патента: AU2023270218A1. Автор: Batra Vineet,Phogat Ankit,Chaudhuri Siddhartha,Jindal Ashish,Dhingra Sumit,Aaron Carr Nathan. Владелец: Adobe Inc. Дата публикации: 2024-08-08.

Computer-implemented method for modelling a projection of a scene in three-dimensional space into a composite image

Номер патента: EP4416685A1. Автор: Grady JENSEN. Владелец: BRAINLAB AG. Дата публикации: 2024-08-21.

System for authorizing rendering of objects in three-dimensional spaces

Номер патента: US20210064774A1. Автор: Todd Collart. Владелец: Individual. Дата публикации: 2021-03-04.

System for authorizing rendering of objects in three-dimensional spaces

Номер патента: US20230115709A1. Автор: Todd Collart. Владелец: Individual. Дата публикации: 2023-04-13.

Data Recovery in Three Dimensional Non-Volatile Memory Array After Word Line Short

Номер патента: US20170228299A1. Автор: Idan Alrod,Eran Sharon,Ofer Shapira. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-10.

Geophysical reconnaissance method for detecting oil-gas productive types of geological cross-section in three-dimensional inter-well space

Номер патента: RU2255358C1. Автор: В.Н. Нестеров,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова,И.А. Мушин. Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-06-27.

Method for determining oil bed productiveness in three-dimensional inter-well space

Номер патента: RU2259575C1. Автор: В.Н. Нестеров,С.Б. Денисов,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова,М.Л. Афанасьев. Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-08-27.

Method for geophysical prospecting for determining oil productiveness of cracked carbonate collectors in three-dimensional inter-well space

Номер патента: RU2253886C1. Автор: В.Н. Нестеров,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова. Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-06-10.

Method for geophysical prospecting for determining hydraulic conductivity and capacity of oil and gas productive porous collectors in three-dimensional inter-well space

Номер патента: RU2253884C1. Автор: В.Н. Нестеров,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова,И.А. Мушин. Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-06-10.

Method of sequential determination of certain trajectories of movement of material objects in three-dimensional space

Номер патента: RU2651342C1. Автор: Мария Олеговна Солнцева-Чалей. Владелец: Мария Олеговна Солнцева-Чалей. Дата публикации: 2018-04-19.

Method for determining coordinates of radio-frequency radiation source in three-dimensional space

Номер патента: RU2643360C1. Автор: Игорь Викторович Чеботарь,Михаил Тимурович Балдычев,Юрий Николаевич Гайчук,Вячеслав Викторович Печурин. Владелец: Юрий Николаевич Гайчук. Дата публикации: 2018-02-01.

Apparatus, system, and method for use in three-dimensional printing

Номер патента: US20200269505A1. Автор: Jing Zhang,Amir Mansouri,Huijian Tian,Abdol Hossein Bassir. Владелец: Sprintray Inc. Дата публикации: 2020-08-27.

Apparatus, system, and method for use in three-dimensional printing

Номер патента: US20200361148A1. Автор: Jing Zhang,Amir Mansouri,Huijian Tian,Abdol Hossein Bassir. Владелец: Sprintray Inc. Дата публикации: 2020-11-19.

Algorithm for Realizing Invariant Fitting Center in Three-Dimensional Fitting Process of Seismic Data

Номер патента: AU2020102023A4. Автор: HAO LI,YING Liang,Changsong Lin,Zhenhu NING. Владелец: China University of Geosciences Beijing. Дата публикации: 2020-10-01.

Shared decoder architecture for three-dimensional memory arrays

Номер патента: US20240321349A1. Автор: Ferdinando Bedeschi,Andrea Martinelli,Christophe Vincent Antoine Laurent,Efrem Bolandrina. Владелец: Micron Technology Inc. Дата публикации: 2024-09-26.

Bolt connections between tubular rods and junctions in three-dimensional frameworks

Номер патента: US4193706A. Автор: Helmut Eberlein,Hermann Quenzel,Otto Kornberger. Владелец: Mero Raumstruktur GmbH and Co. Дата публикации: 1980-03-18.

Sequential detection based classifications of rfid tags in three-dimensional space

Номер патента: WO2020033229A1. Автор: Sampath Rangarajan,Mustafa Arslan,Mohammad Khojastepour,Quoc-Huy Tran. Владелец: NEC Laboratories America, Inc.. Дата публикации: 2020-02-13.

Method and system for tracking motion of subjects in three dimensional scene

Номер патента: US20210065377A1. Автор: Apurba Das,Manikandtan Kartha,Vaibhav Devariya,Kajol Purushottam Zade,Abhishek Biradar. Владелец: Tata Consultancy Services Ltd. Дата публикации: 2021-03-04.

Optimizing error correcting code in three-dimensional stacked memory

Номер патента: US20190220351A1. Автор: Saravanan Sethuraman,John B. DeForge,Kirk D. Peterson,Diyanesh B. Chinnakkonda Vidyapoornachary,Sridhar Rangarajan. Владелец: International Business Machines Corp. Дата публикации: 2019-07-18.

Pressure sensing in three-dimensional (3d) space

Номер патента: WO2023211506A1. Автор: Yan Zhang,Zongfang LIN,Frederick Chi Tak CHOW. Владелец: Futurewei Technologies, Inc.. Дата публикации: 2023-11-02.

Method and apparatus for facilitating navigation in three-dimensional graphic scenes

Номер патента: EP1046137A1. Автор: John J. Light. Владелец: Intel Corp. Дата публикации: 2000-10-25.

Method and apparatus for facilitating navigation in three-dimensional graphic scenes

Номер патента: WO1999031628A1. Автор: John J. Light. Владелец: Intel Corporation. Дата публикации: 1999-06-24.

Inflatable membrane for use in three-dimensional imaging

Номер патента: EP2724117A2. Автор: Manas C. Menon,Douglas P. Hart,Federico Frigerio,Douglas M. Johnston,Daniel Vlasic. Владелец: Massachusetts Institute of Technology. Дата публикации: 2014-04-30.

Hardened build platform for use in three-dimensional printing systems

Номер патента: US20240092020A1. Автор: Huijian Tian,Hossein Bassir,Aayush Patel,Anjali E. Daniels. Владелец: Sprintray Inc. Дата публикации: 2024-03-21.

Method for automatically detecting landmark in three-dimensional dental scan data, and computer-readable recording medium with program for executing same in computer recorded thereon

Номер патента: CA3200325A1. Автор: Hannah Kim,Youngjun Kim,JinHyeok Choi,Bonjour SHIN. Владелец: Imagoworks Inc. Дата публикации: 2022-06-16.

Method for automatically detecting landmark in three-dimensional dental scan data, and computer-readable recording medium with program for executing same in computer recorded thereon

Номер патента: US20240016446A1. Автор: Hannah Kim,Youngjun Kim,JinHyeok Choi,Bonjour SHIN. Владелец: Imagoworks Inc. Дата публикации: 2024-01-18.

System and method for detecting object in three-dimensional space using infrared sensors

Номер патента: US9229580B2. Автор: King Sang Chow,Zhonghui Zhao,Ka Fung Yeung. Владелец: TECHNOKEY Co Ltd. Дата публикации: 2016-01-05.

Method for automatically detecting landmark in three-dimensional dental scan data, and computer-readable recording medium with program for executing same in computer recorded thereon

Номер патента: EP4241731A1. Автор: Hannah Kim,Youngjun Kim,JinHyeok Choi,Bonjour SHIN. Владелец: Imagoworks Inc. Дата публикации: 2023-09-13.

System and method for detecting object in three-dimensional space using infrared sensors

Номер патента: US20160076875A1. Автор: King Sang Chow,Zhonghui Zhao,Ka Fung Yeung. Владелец: TECHNOKEY Co Ltd. Дата публикации: 2016-03-17.

System and method for detecting object in three-dimensional space using infrared sensors

Номер патента: US9372071B2. Автор: King Sang Chow,Zhonghui Zhao,Ka Fung Yeung. Владелец: TECHNOKEY Co Ltd. Дата публикации: 2016-06-21.

System and method for detecting object in three-dimensional space using infrared sensors

Номер патента: US20150185894A1. Автор: King Sang Chow,Zhonghui Zhao,Ka Fung Yeung. Владелец: TECHNOKEY Co Ltd. Дата публикации: 2015-07-02.

Device for orientation and position detection of markings in three-dimensional space

Номер патента: US11815345B2. Автор: Laurent Gilson,Wolfgang Bruening,Frank HONISCH. Владелец: Soft2tec GmbH. Дата публикации: 2023-11-14.

Device for orientation and position detection of markings in three-dimensional space

Номер патента: US20230196610A1. Автор: Laurent Gilson,Wolfgang Bruening,Frank HONISCH. Владелец: Soft2tec GmbH. Дата публикации: 2023-06-22.

Multilayered rail guide vehicle system for use in three-dimensional planting in plant factory, and control method therefor

Номер патента: US20240032458A1. Автор: Yi Zheng,Lei Zhang,Jiabao Wang,Qichang Yang,Yaliang XU,Chengchao XUE,Zhonghui HAN,Yinjian ZHENG. Владелец: Institute of Urban Agriculture of Chinese Academy of Agricultural Sciences. Дата публикации: 2024-02-01.

Method of attenuating noise in three dimensional seismic data using a projection filter

Номер патента: CA2358512A1. Автор: Ahmet Kemal Ozdemir,Ralf Ferber,Ali Ozbek,Kamil Zerouk. Владелец: Kamil Zerouk. Дата публикации: 2000-07-20.

Traveltime calculation in three dimensional transversely isotropic (3d tti) media by the fast marching method

Номер патента: CA2636250C. Автор: Min Lou. Владелец: Baker Hughes Inc. Дата публикации: 2013-09-24.

Method and apparatus for tracking motion of objects in three-dimensional space

Номер патента: CA3210400A1. Автор: David RIVAL,Frieder KAISER. Владелец: Queen's Unviversity At Kingston. Дата публикации: 2022-09-09.

Photosensitized composite material, three-dimensional memory material and recording medium, optical power limiting material and element, photocuring material and stereolithography system, and fluorescent material for multiphoton fluorescence microscope and multiphoton fluorescence microscope

Номер патента: EP2057504A1. Автор: Masaomi Sasaki,Tsutomu Sato,Tatsuya Tomura,Takeshi Miki,Mikiko Takada. Владелец: Ricoh Co Ltd. Дата публикации: 2009-05-13.

Photosensitized composite material, three-dimensional memory material and recording medium, optical power limiting material and element, and photocuring material and stereolithography system, and fluorescent material for multiphoton fluorescence microscope and multiphoton fluorescence microscope

Номер патента: US20090323508A1. Автор: Masaomi Sasaki,Tsutomu Sato,Tatsuya Tomura,Takeshi Miki,Mikiko Takada. Владелец: Ricoh Co Ltd. Дата публикации: 2009-12-31.

Traveltime calculation in three dimensional transversely isotropic (3D TTI) media by the fast marching method

Номер патента: GB2447193A. Автор: Min Lou. Владелец: Baker Hughes Inc. Дата публикации: 2008-09-03.

Method of attenuating noise in three dimensional seismic data using a projection filter

Номер патента: CA2358512C. Автор: Ahmet Kemal Ozdemir,Ralf Ferber,Ali Ozbek,Kamil Zerouk. Владелец: Schlumberger Canada Ltd. Дата публикации: 2007-06-12.

Method and Apparatus for Tracking Motion of Objects in Three-Dimensional Space

Номер патента: US20240193794A1. Автор: David RIVAL,Frieder KAISER. Владелец: Queens University at Kingston. Дата публикации: 2024-06-13.

Shared decoder architecture for three-dimensional memory arrays

Номер патента: US11967372B2. Автор: Ferdinando Bedeschi,Andrea Martinelli,Christophe Vincent Antoine Laurent,Efrem Bolandrina. Владелец: Micron Technology Inc. Дата публикации: 2024-04-23.

Method of and apparatus for reading out digital image data from three-dimensional memory

Номер патента: US5566279A. Автор: Yoichi Katayama. Владелец: NEC Corp. Дата публикации: 1996-10-15.

Three-dimensional memory device

Номер патента: US11894065B2. Автор: Tzu-Hsuan Hsu,Hang-Ting Lue,Teng-Hao Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2024-02-06.

Layer-based memory controller optimizations for three dimensional memory constructs

Номер патента: US20180047453A1. Автор: Fan Zhang,Yu Cai,Hyungseok Kim,Aman BHATIA,Chenrong Xiong,David Pignatelli. Владелец: SK hynix Inc. Дата публикации: 2018-02-15.

Composition and method for use in three dimensional printing

Номер патента: US09873798B2. Автор: Michael Joseph O'Brien,Thomas Francis McNulty,Kwok Pong Chan. Владелец: General Electric Co. Дата публикации: 2018-01-23.

Three dimensional memory device and method for manufacturing the same

Номер патента: US20240203463A1. Автор: Murat Kerem Akarvardar,Xiaochen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

System and method for generation of shadow effects in three-dimensional graphics

Номер патента: EP2973426A1. Автор: LIU Ren,Lincan Zou. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2016-01-20.

Guidance method and apparatus in three-dimensional virtual environment, device, and medium

Номер патента: US20240325904A1. Автор: Ziyi Wang. Владелец: Tencent Technology Shenzhen Co Ltd. Дата публикации: 2024-10-03.

System and method for automatic detection of anatomical points in three-dimensional medical images

Номер патента: RU2530220C1. Автор: Михаил Николаевич Рычагов,Алексей Брониславович Данилевич,Михаил Юрьевич Сиротенко,Дмитрий Александрович Коробченко,Правин Гулака. Владелец: Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд.". Дата публикации: 2014-10-10.

Systems and methods for message embedding in three-dimensional image data

Номер патента: EP4162475A1. Автор: FENG Yang,Ondrej Stava,Xiyang Luo,Innfarn Yoo. Владелец: Google LLC. Дата публикации: 2023-04-12.

Systems and methods for message embedding in three-dimensional image data

Номер патента: WO2021247038A1. Автор: FENG Yang,Ondrej Stava,Xiyang Luo,Innfarn Yoo. Владелец: Google LLC. Дата публикации: 2021-12-09.

Method and Apparatus for Interaction in Three-Dimensional Space, Storage Medium, and Electronic Apparatus

Номер патента: US20240338905A1. Автор: Jinjun Wang,Yibao Luo,Qiaoyun CUI. Владелец: ZTE Corp. Дата публикации: 2024-10-10.

Electrophotosensitive material, production method of the same and method for inspecting an intermediary of the same

Номер патента: US20030039907A1. Автор: Maki Uchida. Владелец: Kyocera Mita Corp. Дата публикации: 2003-02-27.

Electrophotosensitive material, production method of the same and method for inspecting an intermediary of the same

Номер патента: EP1243975A3. Автор: Maki c/o Kyocera Mita Corporation Uchida. Владелец: Kyocera Mita Corp. Дата публикации: 2003-11-19.

Method and arrangement for censoring content in three-dimensional images

Номер патента: WO2012041903A1. Автор: Marc Van Den Broeck,Hans Van Herreweghe,Sammy Lievens. Владелец: ALCATEL LUCENT. Дата публикации: 2012-04-05.

Extruded element having an area of bulk material for a housing for a hand-held device and a corresponding method for its manufacture

Номер патента: WO2010025028A1. Автор: Gary R. Weiss,Joseph L. Allore,Jason P. Wojack. Владелец: MOTOROLA, INC.. Дата публикации: 2010-03-04.

Method and apparatus for identifying gaze behavior in three-dimensional space, and storage medium

Номер патента: US12099650B2. Автор: RAN Yang,Qichao Zhao. Владелец: Kingfar International Inc. Дата публикации: 2024-09-24.

System and method for missing ejector correction in three-dimensional object printing by waveform adjustment

Номер патента: US09914264B2. Автор: Jeffrey J. Folkins,David A. Mantell. Владелец: Xerox Corp. Дата публикации: 2018-03-13.

Method and apparatus for skill aiming in three-dimensional virtual environment, device and storage medium

Номер патента: CA3136380A1. Автор: YU Chen,Le Wang,Xun Hu,Yulin WAN,Shandong SU. Владелец: Tencent Technology Shenzhen Co Ltd. Дата публикации: 2021-08-19.

Method for forming pattern and method for fabricating LCD device using the same

Номер патента: US20070148603A1. Автор: Jae Oh,Hye Lee. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2007-06-28.

Photoresist compositions, methods for forming pattern using the same, and methods for fabricating semiconductor device using the same

Номер патента: US20220128905A1. Автор: Jung Min Lee,Jong Hoon Kim,Suk Koo Hong,Eun Shoo Han,Sung An Do,Hong Joon Lee,Seung Chul Kwon,Sin Hae Do. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-28.

Method for coordinating location in three-dimensional space by using solid figure

Номер патента: EP4216162A1. Автор: Hak Min Kim. Владелец: Individual. Дата публикации: 2023-07-26.

Method for coordinating location in three-dimensional space by using solid figure

Номер патента: US20230394752A1. Автор: Hak Min Kim. Владелец: Individual. Дата публикации: 2023-12-07.

Glass with modified surface regions and methods and apparatuses for forming the same via electro-thermal poling and field-assisted ion exchange

Номер патента: US20230024221A1. Автор: Michael Thomas Gallagher,Nicholas James Smith,Cody Vic Cushman,Charles Thomas MCLAREN,Mardochee Reveil. Владелец: Corning Inc. Дата публикации: 2023-01-26.

Photo-curable resin compositions and method of using the same in three-dimensional printing for manufacturing artificial teeth and denture base

Номер патента: US9456963B2. Автор: Jae Sik Lee. Владелец: Dentca Inc. Дата публикации: 2016-10-04.

Method and system for locating critical flow feature indicators in three dimensional flow regimes

Номер патента: EP1668320A2. Автор: Siva M. Mangalam. Владелец: Tao of Systems Integration Inc. Дата публикации: 2006-06-14.

Material manipulation in three-dimensional printing

Номер патента: US20240293969A1. Автор: Benyamin Buller,Yacov Elgar,Thomas Blasius Brezoczky,Alan Rick Lappen,James FRECHMAN. Владелец: Velo3D Inc. Дата публикации: 2024-09-05.

Method for determining oil productiveness of porous collectors in three-dimensional inter-well space

Номер патента: RU2253885C1. Автор: В.Н. Нестеров,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова,М.Л. Афанасьев,В.Н. Нестеров (RU),Е.А. Копилевич (RU),Е.П. Соколов (RU),Е.А. Давыдова (RU),М.Л. Афанасьев (RU). Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-06-10.

Method for displaying posture of robot in three-dimensional map, apparatus, device, and storage medium

Номер патента: EP4261789A1. Автор: Yang Yu,Zhen Wu. Владелец: Beijing Roborock Innovation Technology Co Ltd. Дата публикации: 2023-10-18.

Method for displaying posture of robot in three-dimensional map, apparatus, device, and storage medium

Номер патента: US20240012425A1. Автор: Yang Yu,Zhen Wu. Владелец: Beiljing Roborock Innovation Technology Co Ltd. Дата публикации: 2024-01-11.

Select gates separation for improving performance in three-dimensional non-volatile memory

Номер патента: US20190221269A1. Автор: Khanh Nguyen,Jong Hak Yuh,Qui Vi Nguyen. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-07-18.

Differential non-volatile memory device and bit reading method for the same

Номер патента: US20040190346A1. Автор: Fabio Pasolini,Michele Tronconi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2004-09-30.

System and method for generation of shadow effects in three-dimensional graphics

Номер патента: WO2014159285A1. Автор: LIU Ren,Lincan Zou. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2014-10-02.

Asynchronous multi-plane independent scheme dynamic analog resource sharing in three-dimensional memory devices

Номер патента: US11901034B2. Автор: Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

System and method for distortion correction in three-dimensional environment visualization

Номер патента: WO2014159330A1. Автор: LIU Ren. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2014-10-02.

Interaction method and apparatus in three-dimensional space, storage medium, and electronic apparatus

Номер патента: EP4345760A1. Автор: Jinjun Wang,Yibao Luo,Qiaoyun CUI. Владелец: ZTE Corp. Дата публикации: 2024-04-03.

Systems and Methods for Message Embedding in Three-Dimensional Image Data

Номер патента: US20230214953A1. Автор: FENG Yang,Ondrej Stava,Xiyang Luo,Innfarn Yoo. Владелец: Google LLC. Дата публикации: 2023-07-06.

Asynchronous multi-plane independent scheme dynamic analog resource sharing in three-dimensional memory devices

Номер патента: US20220319571A1. Автор: Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-10-06.

Systems for electroencephalography and methods for use and manufacture of the same

Номер патента: WO2024011174A3. Автор: Giorgio Bonmassar. Владелец: The General Hospital Corporation. Дата публикации: 2024-06-27.

Multi-enzyme conjugate, method for preparing the same and method for preparing organic compound using the same

Номер патента: US20170356014A1. Автор: Inchan Kwon,Sung In Lim,Jinhwan CHO. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2017-12-14.

Pocketed spring unit and method and apparatus for forming the same

Номер патента: AU2018316649A1. Автор: David Clare,Simon Spinks,Richard ESSERY,Darren MARCANGELO. Владелец: HS Products Ltd. Дата публикации: 2020-03-05.

Pocketed spring unit and method and apparatus for forming the same

Номер патента: CA3072535A1. Автор: David Clare,Simon Spinks,Richard ESSERY,Darren MARCANGELO. Владелец: HS Products Ltd. Дата публикации: 2019-02-21.

Pocketed spring unit and method and apparatus for forming the same

Номер патента: CA3072535C. Автор: David Clare,Simon Spinks,Richard ESSERY,Darren MARCANGELO. Владелец: HS Products Ltd. Дата публикации: 2022-04-26.

Pocketed spring unit and method and apparatus for forming the same

Номер патента: US20210386210A1. Автор: David Clare,Simon Spinks,Richard ESSERY,Darren MARCANGELO. Владелец: HS Products Ltd. Дата публикации: 2021-12-16.

Microcontroller, electronic device, and method for encrypting transmission data using the same

Номер патента: US20240273240A1. Автор: Kuan-Lun Chiu. Владелец: Nuvoton Technology Corp. Дата публикации: 2024-08-15.

In-vehicle payment system and method for generating authorization information using the same

Номер патента: US20210162947A1. Автор: Sang Jun Lee,Ki Tag Yoo. Владелец: Kia Motors Corp. Дата публикации: 2021-06-03.

Three-dimensional autostereoscopic display and method for reducing crosstalk in three-dimensional displays and in other similar electro-optical devices

Номер патента: US20070121028A1. Автор: Zoran Mihajlovic. Владелец: Individual. Дата публикации: 2007-05-31.

Apparatus and method for thermal normalization in three-dimensional article manufacturing

Номер патента: US5572431A. Автор: Robert B. Brown,Herbert E. Menhennett,Charles F. Kirschman. Владелец: BPM Technology Inc. Дата публикации: 1996-11-05.

Method and apparatus for identifying gaze behavior in three-dimensional space, and storage medium

Номер патента: EP4016255A1. Автор: RAN Yang,Qichao Zhao. Владелец: Kingfar Int Inc. Дата публикации: 2022-06-22.

Identifiable structures in three-dimensional objects

Номер патента: WO2021154253A1. Автор: Wei Huang,John C. Greeven,William J. Allen,Kristopher J. ERICKSON,Temiloluwa ADEGOKE,Prakash Reddy,Matthew Gaubatz,Daniel MOSHER,Jarrid Alexander WITTKOPF,Thomas A. Saksa. Владелец: Hewlett-Packard Development Company, L.P.. Дата публикации: 2021-08-05.

Device, system and method for calibration in three-dimensional model printing

Номер патента: EP1539500A2. Автор: Hanan Gothait,Meir Bar Nathan. Владелец: Object Geometries Ltd. Дата публикации: 2005-06-15.

Adhesive and/or coating formulations usable in three-dimensional printing on fabric

Номер патента: WO2024142068A1. Автор: Lior ZONDER,Yaniv Hirschsohn,Dani PERI,Elena SHPAYZER,Ofir ASHKENAZY. Владелец: Stratasys Ltd.. Дата публикации: 2024-07-04.

Headlamp aiming adjustment system for a mobility device and a controlling method for the same

Номер патента: US20240176154A1. Автор: Sung Ho Park. Владелец: Kia Corp. Дата публикации: 2024-05-30.

Catalyst for aviation fuel production from bio-oil, method for preparation of the same and method for bio-oil upgrading using the same

Номер патента: US12011704B2. Автор: Chang Soo Kim,Kwang Ho Kim,Jong Hyun Lee,Dong Jin Suh,Young Hyun Yoon,Jeong-Myeong Ha,Jae Wook Choi,Chunjae YOO,Kyeongsu KIM,Thi Lien DO,Jin A EUN. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-06-18.

Catalyst for aviation fuel production from bio-oil, method for preparation of the same and method for bio-oil upgrading using the same

Номер патента: US20240165589A1. Автор: Chang Soo Kim,Kwang Ho Kim,Jong Hyun Lee,Dong Jin Suh,Young Hyun Yoon,Jeong-Myeong Ha,Jae Wook Choi,Chunjae YOO,Kyeongsu KIM,Thi Lien DO,Jin A EUN. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-05-23.

Modules For Transferring Magnetic Beads, Automated System Comprising The Same And Method For Nucleic Acid Extraction Using The Same

Номер патента: US20230258677A1. Автор: Young Wook Kim,Seung Jae Lee,Seong Sik HONG. Владелец: Seegene Inc. Дата публикации: 2023-08-17.

Apparatus, memory controller, memory device, memory system, and method for clock switching and low power consumption

Номер патента: US12100475B2. Автор: Hyungjin Kim,Jungsik Park,Soongmann Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

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Номер патента: RU2316347C2. Автор: Майкл ХОТОН,Стефен Р. КОУТС,Дерек О`ХЭЙГАН,Ю-Лиан ФОНГ. Владелец: Чирон Корпорейшн. Дата публикации: 2008-02-10.

Manipulation of fluids in three-dimensional porous photonic structures with patterned surface properties

Номер патента: CA2819336C. Автор: Marko Loncar,Benjamin Hatton,Joanna Aizenberg,Ian B. Burgess,Lidiya Mishchenko. Владелец: Harvard College. Дата публикации: 2019-03-12.

Method for missing ejector compensation in three-dimensional object printing

Номер патента: US20200101714A1. Автор: David A. Mantell,Stuart A. Schweid. Владелец: Xerox Corp. Дата публикации: 2020-04-02.

Method and apparatus for skill aiming in three-dimensional virtual environment, device and storage medium

Номер патента: AU2020428058A1. Автор: YU Chen,Le Wang,Xun Hu,Yulin WAN,Shandong SU. Владелец: Tencent Technology Shenzhen Co Ltd. Дата публикации: 2021-11-04.

Method for adjusting continuous variable and method and apparatus for analyzing correlation using the same

Номер патента: US20200075172A1. Автор: O Kyu NOH. Владелец: Ajou University Industry Academic Cooperation Foundation. Дата публикации: 2020-03-05.

Ruthenium-titanium oxide aerogel catalyst, method for preparing the same, and method for hydrogenation and hydrodeoxygenation using the same

Номер патента: US20230201804A1. Автор: Hyun Joo Lee,Dong Jin Suh,Young Hyun Yoon,Jeong-Myeong Ha,Jae Wook Choi,Chunjae YOO,Kyeongsu KIM,Ji Song KANG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-06-29.

Distance measuring device and method for measuring distance by using the same

Номер патента: US20220113414A1. Автор: Inoh HWANG,Jisan Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-14.

PAL-18 polypeptides, nucleic acids encoding the same and methods for screening for or modulating the same

Номер патента: US20020106765A1. Автор: Michael Corey,Robert Kinders. Владелец: Individual. Дата публикации: 2002-08-08.

Method for programming a non-volatile memory device and a method for operating a system having the same

Номер патента: US09966132B2. Автор: Il Han Park,Hyun Kook PARK,Hye Jin Yim,Sung Won Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-08.

Folding score and method and apparatus for forming the same

Номер патента: US09895857B2. Автор: Kevin T. Gordon. Владелец: JONCO DIE COMPANY Inc. Дата публикации: 2018-02-20.

Vector for expressing nc protein of hiv and method for producing nc protein using the same

Номер патента: US20100047865A1. Автор: Ji Chang You. Владелец: AVIXGEN INC. Дата публикации: 2010-02-25.

Culture medium composition for increasing growth and metabolic rate of acetogenic strain and method for culturing acetogenic strain using the same

Номер патента: US20240209401A1. Автор: Ji Yeon Kim,In Seop Chang,Mun Gyu LEE,Nu Lee JANG. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2024-06-27.

Gold nonoclusters, dopamine biosensors including them, and methods for diagnosing neurological diseases using the same

Номер патента: US20230341420A1. Автор: Hongmei Xu,Soomin Ahn,Dongil LEE. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2023-10-26.

System for Acquiring Chirp Data and Method for Acquiring Chirp Data Using the Same

Номер патента: US20150260866A1. Автор: Dong Keun Yoo,Young Jun Kim,Jong Hwa Chun,Nam Hyung Koo,Snons Cheong. Владелец: Korea Institute of Geoscience and Mineral Resources KIGAM. Дата публикации: 2015-09-17.

Aerosol pressurized inhalation delivery device and methods for manufacture and use of the same

Номер патента: US12016401B2. Автор: Robert L. Senter,Robert E. Matuszewski. Владелец: Air 2 LLC. Дата публикации: 2024-06-25.

Fabricating method for micro gas sensor and the same

Номер патента: WO2009084871A1. Автор: Seong Dong Kim,Kwang Bum Park,Min Ho Lee,Joon Shik Park. Владелец: KOREA ELECTRONICS TECHNOLOGY INSTITUTE. Дата публикации: 2009-07-09.

Aerosol pressurized delivery device and methods for manufacture and use of the same

Номер патента: US12108809B1. Автор: Robert L. Senter,Robert E. Matuszewski. Владелец: Air 2 LLC. Дата публикации: 2024-10-08.

Real-time mobile capture and application of photographic images as textures in three-dimensional models

Номер патента: US20150009206A1. Автор: Maribeth Joy Back,David Joseph Arendash. Владелец: Fuji Xerox Co Ltd. Дата публикации: 2015-01-08.

Page buffer circuits in three-dimensional memory devices

Номер патента: US20240161789A1. Автор: Yan Wang,Masao Kuriyama,Teng CHEN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Nonvolatile semiconductor memory device and verification control method for the same

Номер патента: US20130176791A1. Автор: Mitsuharu Sakakibara. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-07-11.

Novel metallosilicates, processes for producing the same, nitrogen oxide removal catalyst, process for producing the same, and method for removing nitrogen oxide with the same

Номер патента: US20120207669A1. Автор: Keisuke Tokunaga,Yusuke Naraki,Ko Ariga. Владелец: Tosoh Corp. Дата публикации: 2012-08-16.

Three-dimensional memory device programming with reduced disturbance

Номер патента: US11710529B2. Автор: Jianquan Jia,Kaikai You,Yali SONG,XiangNan Zhao,Yuanyuan MIN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-07-25.

Welding base metal for recycling railway wheel and method for recycling railway wheel using the same

Номер патента: US12104220B2. Автор: Young Jin Lee. Владелец: Asiatech Co Ltd. Дата публикации: 2024-10-01.

Identifying components of a humanoid form in three-dimensional scenes

Номер патента: US8824737B2. Автор: Eran Guendelman,Michael Brand,Amiad Gurman,Tomer Yanir. Владелец: PRIMESENSE LTD. Дата публикации: 2014-09-02.

Devices, methods, and graphical user interfaces for providing inputs in three-dimensional environments

Номер патента: WO2024020061A1. Автор: Julian K. Missig,Mark K. HAUENSTEIN,Fiona P. O'Leary. Владелец: Apple Inc.. Дата публикации: 2024-01-25.

Devices, Methods, and Graphical User Interfaces for Providing Inputs in Three-Dimensional Environments

Номер патента: US20240029377A1. Автор: Julian K. Missig,Mark K. HAUENSTEIN,Fiona P. O'Leary. Владелец: Apple Inc. Дата публикации: 2024-01-25.

Method for database-guided simultaneous multi-slice object detection in three dimensional volumetric data

Номер патента: WO2007022163A1. Автор: Xiang Zhou,Wei Hong,Sriram Krishnan,Bogdan Georgescu,Dorin Comaniciu. Владелец: SIEMENS MEDICAL SOLUTIONS USA, INC.. Дата публикации: 2007-02-22.

Composite quantum dot, method for preparing the same, and method for detecting metal ion using the same

Номер патента: US20240132775A1. Автор: Hsueh-Shih Chen,Pin-Ju CHEN. Владелец: National Tsing Hua University NTHU. Дата публикации: 2024-04-25.

Composite quantum dot, method for preparing the same, and method for detecting metal ion using the same

Номер патента: US20240228871A9. Автор: Hsueh-Shih Chen,Pin-Ju CHEN. Владелец: National Tsing Hua University NTHU. Дата публикации: 2024-07-11.

Autonomous vehicle and method for autonomous driving control using the same

Номер патента: US20210155263A1. Автор: Kwanghee Lee,Namyong Park. Владелец: LG ELECTRONICS INC. Дата публикации: 2021-05-27.

Optical disk apparatus and method for compensating recording power for the same

Номер патента: US20080112286A1. Автор: Hiroharu Sakai. Владелец: Hitachi LG Data Storage Inc. Дата публикации: 2008-05-15.

Preparation method for microcarrier applicable in three-dimensional cell culturing and reaction apparatus

Номер патента: EP4151305A1. Автор: WEI Liu,Xiaojun YAN. Владелец: Beijing Cytoniche Biotechnology Co Ltd. Дата публикации: 2023-03-22.

Method for evaluating dispersibility of powder and method for evaluating concentration of airborne powder, and method for designing containment facility using the same

Номер патента: US20080295620A1. Автор: Shinichi Yamagami,Shuzo Kojima,Naruaki Watanabe. Владелец: JGC Corp. Дата публикации: 2008-12-04.

Containers and method and apparatus for forming containers

Номер патента: EP1948372A2. Автор: Leonard Reiffel. Владелец: Iron Mount Corp. Дата публикации: 2008-07-30.

Containers and Method and Apparatus for Forming Containers

Номер патента: US20120040813A1. Автор: Leonard Reiffel. Владелец: Iron Mount Corp. Дата публикации: 2012-02-16.

Containers and method and apparatus for forming containers

Номер патента: WO2007044863A2. Автор: Leonard Reiffel. Владелец: IRON MOUNT CORPORATION. Дата публикации: 2007-04-19.

Surface Plasmon Resonance Sensor, Surface Plasmon Resonance Sensing Instrument Comprising the Same and Method for Detecting an Analyte Using the Same

Номер патента: US20240248033A1. Автор: Chia-Fu Chou,Kuang-Li Lee,Pei-Kuen Wei,Deng-Kai Yang,Liang-Kun YU,Jui-Hong WENG,Shu-Cheng LO. Владелец: Academia Sinica. Дата публикации: 2024-07-25.

Phase error compensation device and method of radar, and radar device including the same

Номер патента: US20240319334A1. Автор: Jung Hwan Choi,Jingu LEE. Владелец: HL Klemove Corp. Дата публикации: 2024-09-26.

Seam inspection device and seam inspection method for cigarette filter

Номер патента: EP4442131A1. Автор: Kazumasa Arae,Atsuhiro TSUNAKAWA,Takahiro MIYAGISHI. Владелец: Japan Tobacco Inc. Дата публикации: 2024-10-09.

Composition for diagnosing pancreatic cancer and method for diagnosing pancreatic cancer using the same

Номер патента: US09983208B2. Автор: Taesung PARK,Yongsoo Kim,Yonghwan CHOI,Junghyun NAMKUNG,Sung Gon YI,Jin-Young Jang,Sangjo HAN. Владелец: SK TELECOM CO LTD. Дата публикации: 2018-05-29.

Systems and methods for modifying lighting in three-dimensional models

Номер патента: US11847736B2. Автор: Daniel Beauchamp,Byron Leonel Delgado,Stephan Leroux. Владелец: Shopify Inc. Дата публикации: 2023-12-19.

Methods for hematopoietic stem and progenitor cell expansion and differentiation in three-dimensional silk scaffolds and uses thereof

Номер патента: WO2024033385A1. Автор: Alessandra Balduini,Christian Andrea Di Buduo. Владелец: Universita' Degli Studi Di Pavia. Дата публикации: 2024-02-15.

Computer mouse having a front sight button and method for generating local coordinates with the same

Номер патента: US20080094360A1. Автор: Yung-Shun Chuang,Chi-Chun Chu. Владелец: Sunplus Technology Co Ltd. Дата публикации: 2008-04-24.

Computer mouse having a front sight button and method for generating local coordinates with the same

Номер патента: US8072419B2. Автор: Yung-Shun Chuang,Chi-Chun Chu. Владелец: Sunplus Technology Co Ltd. Дата публикации: 2011-12-06.

Cinchona-based bifunctional organocatalysts and method for preparing chiral hemiesters using the same

Номер патента: US20110213151A1. Автор: Ho Sik Rho,Sang Ho Oh,Jik Chin,Ji Woong Lee,Choong Eui Song,Je Wun Lee,Sung Hoon Youk. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2011-09-01.

Apparatus for dispensing viscous fluid and method for dispensing viscous fluid with the same

Номер патента: EP4072741A1. Автор: Jing Li,Zhenzhong Li,Yutao Hu. Владелец: Tonsan Adhesive Inc. Дата публикации: 2022-10-19.

Method and electronic device for selective magnification in three dimensional rendering systems

Номер патента: US12045931B2. Автор: Raghavan VELAPPAN,Nachiketa DAS,Ajay SURENDRANATH,Govindaraju SEMMANDAMPALAYAM MUTHUSAMY. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-23.

A battery charging and swapping station and methods for managing operating modes of the same

Номер патента: WO2024155237A1. Автор: Suraj Raju,Arvind GOPALAKRISHNAN,Karthikeyan S,Kumar GUNJAN. Владелец: Sun Mobility Pte Ltd. Дата публикации: 2024-07-25.

Microfluidic device comprising electrolysis device for cell lysis and method for electrochemically lysing cells using the same

Номер патента: US20090159463A1. Автор: Joon-Ho Kim,Kyu-Youn Hwang,Hun-Joo Lee,Hee-Kyun Lim,Soo-Min Ma,Chang-Eun Yoo,Jun-Hong Min. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-25.

Microfluidic device comprising electrolysis device for cell lysis and method for electrochemically lysing cells using the same

Номер патента: US20060134777A1. Автор: Joon-Ho Kim,Kyu-Youn Hwang,Hun-Joo Lee,Hee-Kyun Lim,Soo-Min Ma,Chang-Eun Yoo,Jun-Hong Min. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-06-22.

Estimation of electromagnetic tool detection capability in three-dimensional formation

Номер патента: US20240255671A1. Автор: Sergey Martakov,Nikolay Velker,Gleb Dyatlov. Владелец: Baker Hughes Oilfield Operations LLC. Дата публикации: 2024-08-01.

Automated analyzing device, and abnormality determining method for same

Номер патента: EP4425185A1. Автор: Hajime Kato,Hiroki Hamada,Hisashi YABUTANI. Владелец: Hitachi High Tech Corp. Дата публикации: 2024-09-04.

Estimation of electromagnetic tool detection capability in three-dimensional formation

Номер патента: WO2024159004A1. Автор: Sergey Martakov,Nikolay Velker,Gleb Dyatlov. Владелец: Baker Hughes Oilfield Operations LLC. Дата публикации: 2024-08-02.

Memory module including memory devices to which unit id is assigned and storage device including the same

Номер патента: US20240345944A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Nickel-Based Oligomerization Catalysts and Method for Oligomerizing Light Olefins Using the Same

Номер патента: US20240326027A1. Автор: Dae Hyun Choo,Ka Young Kim,Hee Soo Kim,Ju Hwan IM,Ho Won Lee,Jae Suk Choi,Je Mi Lim. Владелец: SK Geo Centric Co Ltd. Дата публикации: 2024-10-03.

Memory module including memory devices to which unit id is assigned and storage device including the same

Номер патента: EP4459620A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-06.

Nickel-based oligomerization catalysts and method for oligomerizing light olefins using the same

Номер патента: US12042787B2. Автор: Dae Hyun Choo,Ka Young Kim,Hee Soo Kim,Ju Hwan IM,Ho Won Lee,Jae Suk Choi,Je Mi Lim. Владелец: SK Geo Centric Co Ltd. Дата публикации: 2024-07-23.

Method for preparing conjugated diene-based polymer and method for preparing graft copolymer comprising the same

Номер патента: US12037435B2. Автор: Young Min Kim,Jin Hyoung Lee,Su Jeong Han,Yoo Vin Kim,Young Hwan Jeong,Jae Min Suk,Jae Won HEO,Chang Hong BAK. Владелец: LG Chem Ltd. Дата публикации: 2024-07-16.

Fluid supplying apparatus and system and method for cleaning thin film using the same

Номер патента: US09943887B2. Автор: Ye-Hoon Im,Kyoung-Hoon Min,Jae-Min Kim,Chae-Ho Chung,Do-Ki Chang,Ki-Kyo Yeom,Won-Chan Park,Young Ju SEO. Владелец: LG Chem Ltd. Дата публикации: 2018-04-17.

Natural lubricant for direct compression and method for preparing natural tablet using the same

Номер патента: US09827201B2. Автор: Sung Ki KIM,Jae Seok Shim,Sang Hyeon Kim. Владелец: CJ CHEILJEDANG CORP. Дата публикации: 2017-11-28.

Dimensionally stable anode and method and apparatus for forming the same

Номер патента: US4044218A. Автор: Gerald R. Pohto,Richard O. Olson. Владелец: Diamond Shamrock Corp. Дата публикации: 1977-08-23.

Calibration in three-dimensional printing

Номер патента: US20240066599A1. Автор: Benyamin Buller,Erel Milshtein,Gregory Ferguson BROWN,Rueben Joseph MENDELSBERG,Sergey Borisovich KOREPANOV,Roman Yefimovich NOVOSELOV,Kirk Krikor HAROUTINIAN,Jatinder Bir Singh RANDHAWA. Владелец: Velo3D Inc. Дата публикации: 2024-02-29.

Calibration in three-dimensional printing

Номер патента: US20240059020A1. Автор: Benyamin Buller,Erel Milshtein,Gregory Ferguson BROWN,Jatinder Randhawa,Rueben Joseph MENDELSBERG. Владелец: Velo3D Inc. Дата публикации: 2024-02-22.

Calibration in three-dimensional printing

Номер патента: EP4291390A1. Автор: Benyamin Buller,Erel Milshtein,Gregory Ferguson BROWN,Rueben Joseph MENDELSBERG,Sergey Borisovich KOREPANOV,Roman Yefimovich NOVOSELOV,Kirk Krikor HAROUTINIAN,Jatinder Bir Singh RANDHAWA. Владелец: Velo3D Inc. Дата публикации: 2023-12-20.

Optics in three-dimensional printing

Номер патента: US20240059019A1. Автор: Benyamin Buller,Erel Milshtein,Alexander Brudny. Владелец: Velo3D Inc. Дата публикации: 2024-02-22.

Data processing device and computer-implemented method for motion-dependent image processing in a medical observation device and medical observation device

Номер патента: EP4322104A1. Автор: George Themelis,Marc HONEGGER. Владелец: Leica Instruments Singapore Pte Ltd. Дата публикации: 2024-02-14.

Memory device and data search method for in-memory search

Номер патента: US20240021254A1. Автор: Po-Hao Tseng,Tian-Cih BO. Владелец: Macronix International Co Ltd. Дата публикации: 2024-01-18.

Erase-verify method for three-dimensional memories and memory system

Номер патента: US20190139615A1. Автор: Atsuhiro Suzuki,Wen-Jer Tsai,Yu-Hung Huang,Cheng-Hsien Cheng,Chih-Wei Lee,Shaw-Hung Ku. Владелец: Macronix International Co Ltd. Дата публикации: 2019-05-09.

Roller assembly and method for transporting a substrate using the same

Номер патента: US20180148262A1. Автор: Kuo-Hsin Huang,Chao-Feng Sung,Yu-Lin Hsu,Hsin-Yun Hsu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2018-05-31.

Carbon nanodot-fluorescent polymer composite, and method for preparing and fiber including the same

Номер патента: US20220325172A1. Автор: Wei-Yu Chen,Chia-Yang Wu,zong-han Wu,Cheng-Ho Chen,Yen-Chou Chen,Ya-Yun Ho. Владелец: TAINAN SPINNING CO Ltd. Дата публикации: 2022-10-13.

Data processing device and computer-implemented method for motion-dependent image processing in a medical observation device and medical observation device

Номер патента: WO2024033503A1. Автор: George Themelis,Marc HONEGGER. Владелец: Leica Instruments (Singapore) Pte. Ltd.. Дата публикации: 2024-02-15.

Object positioning and movement in three dimensional content

Номер патента: WO2020163549A1. Автор: . Владелец: Ocelot Laboratories Llc. Дата публикации: 2020-08-13.

Method for generating optical proximity correction model and method for fabricating semiconductor device using the same

Номер патента: US20240353748A1. Автор: Sang Chul YEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-24.

Devices and systems configured to fit around a tissue using the same

Номер патента: US09980841B2. Автор: Ghassan S. Kassab,Thomas A. Kramer. Владелец: CVDevices LLC. Дата публикации: 2018-05-29.

Burning apparatus and method for manufacturing reduced iron using the same

Номер патента: US09976806B2. Автор: Jong In Park,Min Kyu Wang,Sang Han Son,Byung Woon Hwang. Владелец: Posco Co Ltd. Дата публикации: 2018-05-22.

Computerised control device and computer-implemented method for controlling a product processing plant, and computer program product

Номер патента: US09952588B2. Автор: Uwe Groth,Maurizio Corvo. Владелец: Ferag AG. Дата публикации: 2018-04-24.

Carton having buckle-controlled brim curl and method and blank for forming the same

Номер патента: US5868309A. Автор: Erland R. Sandstrom,Kenneth John Shanton,Timothy Paul Hartjes. Владелец: Fort James Corp. Дата публикации: 1999-02-09.

Interactive device and force profiling method for real-time inhalation

Номер патента: RU2618931C2. Автор: Бенуа АДАМО,Чад С. СМАТНИ,Джон М. ПОЛИДОРО,П. Спенсер КИНСИ,Карл Р. САХИ,Скотт МакЛИН,Деннис ОУВЕРФИЛД. Владелец: Маннкайнд Корпорейшн. Дата публикации: 2017-05-11.

Augmented reality-assisted methods and apparatus for assessing fit of physical objects in three-dimensional bounded spaces

Номер патента: CA3131389A1. Автор: Daniel Beauchamp,Byron Leonel Delgado,Maas Mansoor Ali Lalani. Владелец: Shopify Inc. Дата публикации: 2022-04-28.

Augmented reality-assisted methods and apparatus for assessing fit of physical objects in three-dimensional bounded spaces

Номер патента: CA3131389C. Автор: Daniel Beauchamp,Byron Leonel Delgado,Maas Mansoor Ali Lalani. Владелец: Shopify Inc. Дата публикации: 2024-01-09.

Extrusion dies and methods and apparatuses for forming the same

Номер патента: WO2016144714A3. Автор: Scott Winfield Deming,John Christopher Thomas,Kevin Lee Wasson. Владелец: CORNING INCORPORATED. Дата публикации: 2016-11-03.

Three-dimensional memory device and method for detecting leakage state

Номер патента: US20220351802A1. Автор: Weihua Shi. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-11-03.

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Номер патента: EP2596459A1. Автор: Richard Jacobus Maria Den Hollander,Henri Bouma,Sander Hubert Landsmeer. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2013-05-29.

Membrane protein expression vector comprising major envelope protein p9 of systovirus phi12 as a fusion partner and method for producing membrane protein using the same

Номер патента: US20140065673A1. Автор: Yuna Jung,Dongbin Lim. Владелец: FOUNDATION OF SOONGSIL UNIVERSITY INDUSTRY COOPERATION. Дата публикации: 2014-03-06.

Novel method for labeling nucleic acid in a sequence-specific manner, and method for detecting nucleic acid using the same

Номер патента: WO2006003638A3. Автор: Ichiro Mitsuhara,Yuko Ohashi. Владелец: Nat Inst Of Agrobio Sciences. Дата публикации: 2006-03-30.

Paint thickness measuring device and computer-implemented method for measuring paint thickness

Номер патента: US20240271927A1. Автор: LIN Ke,HONG Liu,Nan Zhang,Qing Yang Steve Wu,Chun Yong Andrew NGO,Hai Sheng Leong,Sergey GORELIK. Владелец: Agency for Science Technology and Research Singapore. Дата публикации: 2024-08-15.

Paint thickness measuring device and computer-implemented method for measuring paint thickness

Номер патента: WO2023043379A3. Автор: LIN Ke,HONG Liu,Nan Zhang,Qing Yang Steve Wu,Chun Yong Andrew NGO,Hai Sheng Leong,Sergey GORELIK. Владелец: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH. Дата публикации: 2023-06-01.

Paint thickness measuring device and computer-implemented method for measuring paint thickness

Номер патента: WO2023043379A2. Автор: LIN Ke,HONG Liu,Nan Zhang,Qing Yang Steve Wu,Chun Yong Andrew NGO,Hai Sheng Leong,Sergey GORELIK. Владелец: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH. Дата публикации: 2023-03-23.

Packaging blank, method for molding a lid-spout assembly onto a packaging blank, lid spout assembly, package having a lid-spout assembly and method and apparatus for forming a packaging blank

Номер патента: AU2023260570A1. Автор: Pietro Martini,Giulio Bertani,Daniele Golfieri. Владелец: Tetra Laval Holdings and Finance SA. Дата публикации: 2024-10-10.

Root canal filling material containing mesenchymal stem cells and method for regenerating dental tissue using the same

Номер патента: US09962237B2. Автор: Misako Nakashima,Koichiro Iohara. Владелец: NATIONAL CENTER FOR GERIATRICS AND GERONTOLOGY. Дата публикации: 2018-05-08.

Subgroup B recombinant human adenovirus vector, and methods for constructing and for using the same

Номер патента: US09932606B2. Автор: Nick Lemoine,Guozhong Jiang,Yaohe Wang,Fengyu CAO,Hanshi WONG. Владелец: BEIJING BIO-TARGETING THERAPEUTICS TECHNOLOGY Inc. Дата публикации: 2018-04-03.

Memory device, memory system, and method for operating memory device

Номер патента: US09818493B2. Автор: Dong-Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2017-11-14.

Latch bearing for blow-molded case, and method and apparatus for forming same

Номер патента: US5139294A. Автор: Andrew E. Dembicks,William W. Ward. Владелец: Southern Case Inc. Дата публикации: 1992-08-18.

Latch bearing for blow-molded case, and method and apparatus for forming same

Номер патента: CA2066300C. Автор: Andrew E. Dembicks,William W. Ward. Владелец: Delta Consolidated Industries Inc. Дата публикации: 1996-04-30.

Generating cluster states for hierarchical clusters in three-dimensional data models

Номер патента: US20180336726A1. Автор: Cary Glen Noel,Clark Allan,Alexander Raitz,Roy Arsan. Владелец: Splunk Inc. Дата публикации: 2018-11-22.

Systems and methods for adaptive read training of three dimensional memory

Номер патента: US20220276805A1. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2022-09-01.

Systems and methods for adaptive read training of three dimensional memory

Номер патента: US11733915B2. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2023-08-22.

Pipette with encapsulated or integral filter, and method and apparatus for forming same

Номер патента: US20200398264A1. Автор: Michael Kurt SCHAEFER,James Mark SEYMOUR,Venu krishna PILLAI,John Claude Cadotte, Jr.. Владелец: Corning Inc. Дата публикации: 2020-12-24.

Data recording and reproducing device and peak detecting method for analog reproduced signal in the same device

Номер патента: JPH1083509A. Автор: Takahiro Koyanagi,孝博 小柳. Владелец: Toshiba Corp. Дата публикации: 1998-03-31.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

Номер патента: WO2024205709A1. Автор: Takaaki IWAI,Shinsuke YADA,Teruo OKINA,Yuki FUKUSHIGE. Владелец: Sandisk Technologies Llc.. Дата публикации: 2024-10-03.

Method for determining oil and gas productiveness of cracked argillaceous collectors in three-dimensional inter-well space

Номер патента: RU2255359C1. Автор: В.Н. Нестеров,Е.А. Копилевич,Е.П. Соколов,Е.А. Давыдова,М.Л. Афанасьев. Владелец: Общество с ограниченной ответственностью "Инжиниринговый центр". Дата публикации: 2005-06-27.

Mode of geophysical exploration for exposure of small amplitude tectonic abnormalities of oil-gas productive rocks in three-dimensional space

Номер патента: RU2300126C1. Автор: Александр Юрьевич Петров,Ефим Абрамович Копилевич,Екатерина Михайловна Бирун,Елена Александровна Давыдова,Михаил Лукь нович Афанасьев,Михаил Лукьянович Афанасьев. Владелец: ОАО "НК "Роснефть". Дата публикации: 2007-05-27.

Apparatus for playing of "noughts-and-crosses" game in three-dimensional space

Номер патента: RU2294233C1. Автор: Александр Георгиевич Сучков. Владелец: Александр Георгиевич Сучков. Дата публикации: 2007-02-27.

Apparatus for playing of "noughts-and-crosses" game in three-dimensional space

Номер патента: RU2294231C1. Автор: Александр Георгиевич Сучков. Владелец: Александр Георгиевич Сучков. Дата публикации: 2007-02-27.

Apparatus for playing of "noughts-and-crosses" game in three-dimensional space

Номер патента: RU2294232C1. Автор: Александр Георгиевич Сучков,Александр Георгиевич Сучков (RU). Владелец: Александр Георгиевич Сучков. Дата публикации: 2007-02-27.

ELECTRODE WIRE FOR WIRE ELECTRICAL DISCHARGE MACHINING, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR ELECTRICAL DISCHARGE MACHINING USING THE SAME

Номер патента: US20120000889A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

TISSUE MARKINGS AND METHODS FOR REVERSIBLY MARKING TISSUE EMPLOYING THE SAME

Номер патента: US20120003301A1. Автор: Agrawal Satish,Boggs Roger. Владелец: PERFORMANCE INDICATOR LLC. Дата публикации: 2012-01-05.

Radiator tube and method and apparatus for forming same

Номер патента: WO1995005571B1. Автор: . Владелец: . Дата публикации: 1995-04-13.

Rotating member and method for depositing of coating onto the same

Номер патента: RU2320776C2. Автор: Акихиро ГОТО,Мицутоси ВАТАНАБЕ,Масао АКИЙОСИ,Хироюки ОТИАЙ,Мики АРАЙ,Микия АРАЙ,Сигеру САБУРИ,Цуйоси ЯМАКАВА,Сого ЦУГУМИ,Дзун САКАЙ,Цунао ТЕЗУКА. Владелец: Исикавадзима-Харима Хэви Индастриз Ко.,Лтд.. Дата публикации: 2008-03-27.

Dimensionally stable anode and method and apparatus for forming same

Номер патента: CA1052730A. Автор: Gerald R. Pohto,Richard O. Olson. Владелец: Diamond Shamrock Corp. Дата публикации: 1979-04-17.

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