Three-dimensional memory device employing direct source contact and hole current detection and method of making the same
Номер патента: EP3619744A1
Опубликовано: 11-03-2020
Автор(ы): Kiyohiko Sakakibara, Naoto NORIZUKI, Satoshi Shimizu
Принадлежит: SanDisk Technologies LLC
Опубликовано: 11-03-2020
Автор(ы): Kiyohiko Sakakibara, Naoto NORIZUKI, Satoshi Shimizu
Принадлежит: SanDisk Technologies LLC
Реферат: A three-dimensional memory device includes a p-doped source semiconductor layer located over a substrate, a p-doped strap semiconductor layer located over the p-doped source semiconductor layer, an alternating stack of electrically conductive layers and insulating layers located over the p-doped strap semiconductor layer, and memory stack structures that extend through the alternating stack and into an upper portion of the p-doped source semiconductor layer. Each memory stack structure includes a p-doped vertical semiconductor channel and a memory film laterally surrounding the p-doped vertical semiconductor channel. A top surface of each p-doped vertical semiconductor channel contacts a bottom surface of a respective n-doped region. A sidewall of a bottom portion of each p-doped vertical semiconductor channel contacts a respective sidewall of the p-doped strap semiconductor layer.
Three-dimensional memory device employing direct source contact and hole current detection and method of making the same
Номер патента: WO2019027541A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-02-07.