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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375910A1
Опубликовано: 02-12-2021
Автор(ы): Ashish Baraskar, Peter Rabkin, Raghuveer S. Makala
Принадлежит: SanDisk Technologies LLC
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Three dimensional memory device and method for fabricating the same

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Passive devices for integration with three-dimensional memory devices

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

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Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

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Self-selecting local bit line for a three-dimensional memory array

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Decoder architectures for three-dimensional memory devices

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Word line structure of three-dimensional memory device

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory device and manufacturing method thereof

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Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: US09524977B2. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-20.

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Номер патента: US20210384207A1. Автор: Junpei Kanazawa,Takaaki IWAI,Hironori Matsuoka,Hisakazu Otoi,Raiden MATSUNO. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Three-dimensional memory devices containing memory block bridges

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Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

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Three-dimensional memory device with word-line etch stop liners and method of making thereof

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Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same

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Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230129701A1. Автор: Hyun Soo Shin,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Three-dimensional memory device and method of forming the same

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Three-dimensional memory device and method of manufacturing the same

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Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

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Three-dimensional memory and method for manufacturing the same

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Three-dimensional memory and method for forming same

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Contact structures for three-dimensional memory device

Номер патента: US20200194447A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-06-18.

Control Gate Structures in Three-Dimensional Memory Devices and Methods for Forming the Same

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Contact structures for three-dimensional memory device

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Contact structures for three-dimensional memory device

Номер патента: US20230086425A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-23.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130130A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Three-dimensional memory deivce, manufacturing method thereof, and memory system

Номер патента: US20240130129A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Trench structures for three-dimensional memory devices

Номер патента: US20230284445A1. Автор: Zhiliang Xia,Ping Yan,Qiang Xu,Zongliang Huo,Guangji Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Dense piers for three-dimensional memory arrays

Номер патента: US20230309326A1. Автор: David H. Wells,Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Memory cell capacitor structures for three-dimensional memory arrays

Номер патента: US20230397401A1. Автор: Yuan He,Sheyang NING,Song Guo. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Three dimensional memory device

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory, the manufacturing method for the same, and memory system

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Three-dimensional memory devices and fabricating methods thereof

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Trench and pier architectures for three-dimensional memory arrays

Номер патента: US20230329010A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-10-12.

Merged cavities and buried etch stops for three-dimensional memory arrays

Номер патента: US20230397422A1. Автор: David H. Wells,Yoshiaki Fukuzumi,Byeung Chul Kim,Paolo Tessariol,Richard J. Hill. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Three-dimensional memory and fabrication method thereof

Номер патента: US20230138251A1. Автор: Kun Zhang,Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240292622A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-29.

Method of forming three-dimensional memory device

Номер патента: US20230088149A1. Автор: Chia-Jung Chiu,Kuan-Yuan SHEN. Владелец: Macronix International Co Ltd. Дата публикации: 2023-03-23.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20190074291A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-03-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11991880B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-21.

Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US11877449B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Self-aligned isolation dielectric structures for a three-dimensional memory device

Номер патента: US09859363B2. Автор: Zhenyu Lu,Daxin Mao,Chun-Ming Wang,Makoto Yoshida,Tong Zhang,Johann Alsmeier,Jixin Yu,Kota Funayama,Chenche Huang,Lauren MATSUMOTO. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Three-dimensional memory device including hammerhead-shaped word lines and methods of manufacturing the same

Номер патента: WO2023146574A1. Автор: Yuki KASAI,Tomohiro Kubo,Raghuveer S. Makala,Koichi Matsuno,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-03.

Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devices

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Ultrathin semiconductor channel three-dimensional memory devices

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Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

Номер патента: US20240074170A1. Автор: Takashi Yuda,Ippei Yasuda,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-29.

Three-dimensional memory device including discrete charge storage elements and method of making thereof

Номер патента: US20230345719A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-26.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US11925019B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-05.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240251564A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12063787B2. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Three-dimensional memory device and manufacturing method thereof

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Method for forming channel hole plug of three-dimensional memory device

Номер патента: US11943928B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Meng Wang,Yushi Hu,Li Hong XIAO,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-26.

Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

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Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

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Three-dimensional memory device and manufacturing method thereof

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Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

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Three-Dimensional Memory, Chip Package Structure, and Electronic Device

Номер патента: US20240222367A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-04.

Transition structures for three-dimensional memory arrays

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Iii-v compound semiconductor dies with stress-treated inactive surfaces and manufacturing methods thereof

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Iii-v compound semiconductor dies with stress-treated inactive surfaces to avoid packaging-induced fractures, and related methods

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Iii-v compound semiconductor dies with stress-treated inactive surfaces and manufacturing methods thereof

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Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

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Three-dimensional memory device including hammerhead-shaped word lines and methods of manufacturing the same

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Three-dimensional memory device containing self-aligned isolation strips and methods for forming the same

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Three-dimensional memory device with a graphene channel and methods of making the same

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Three-dimensional memory devices having a single layer channel and methods of making thereof

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device including dielectric rails for warpage reduction and method of making the same

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Three-dimensional memory device including dielectric rails for warpage reduction and method of making the same

Номер патента: US11923321B2. Автор: Takayuki Yokoyama,Shin Sakiyama,Genta Mizuno,Toshiyuki Sega,Kenzo IIZUKA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-05.

Inter-deck plug in three-dimensional memory device and method for forming the same

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Inter-deck plug in three-dimensional memory device and method for forming same

Номер патента: EP3815133A1. Автор: Yong Zhang,Enbo Wang,Jialan He,Haohao YANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-05.

Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: US12022656B2. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

Three-dimensional memory device including discrete charge storage elements and methods of making thereof

Номер патента: US20230345727A1. Автор: Satoshi Shimizu,Senaka Kanakamedala,Takumi Moriyama,Nobuyuki Fujimura. Владелец: Western Digital Technologies Inc. Дата публикации: 2023-10-26.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Three-dimensional memory device containing self-aligned isolation strips and methods for forming the same

Номер патента: WO2023140877A1. Автор: Takashi Inomata,Takaaki IWAI,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-07-27.

Three-dimensional memory devices and fabrication methods thereof

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Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20200312870A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Three-dimensional memory device with ferroelectric material

Номер патента: US12041781B2. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Three-dimensional memory device with ferroelectric material

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20220077181A1. Автор: Zhu Yang,CHEN ZUO,ZHEN Guo,BIN Yuan,Jingjing Geng,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20220077283A1. Автор: Yang Zhou,Meng Xiao,ZHEN Guo,HUI Zhang,Jingjing Geng,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

Three-dimensional memory device with source line isolation and method of making the same

Номер патента: US20240105622A1. Автор: Ramy Nashed Bassely SAID,Jiahui Yuan,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Three-dimensional memory device with source line isolation and method of making the same

Номер патента: US20240105623A1. Автор: Ramy Nashed Bassely SAID,Jiahui Yuan,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Contact structures for three-dimensional memory

Номер патента: EP3928351A1. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-29.

Contact structures for three-dimensional memory

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory device with ferroelectric material

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Three-dimensional memory device and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Manufacturing method of three-dimensional memory device with improved RC delay

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Three-dimensional memory device with ferroelectric material

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Local contacts of three-dimensional memory devices and methods for forming the same

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Staircase structures for accessing three-dimensional memory arrays

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Contact structures for three-dimensional memory

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Multiple-stack three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same

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Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same

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Method of making a three-dimensional memory device having a heterostructure quantum well channel

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Method of making a three-dimensional memory array with etch stop

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Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

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Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

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Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

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Three-dimensional memory device employing thinned insulating layers and methods for forming the same

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Method of making self-assembling floating gate electrodes for a three-dimensional memory device

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Three-dimensional memory device containing metal-organic framework inter-word line insulating layers and methods of forming the same

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Three-dimensional memory device with separated source-side lines and method of making the same

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Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit lines

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Three-dimensional memory device with separated source lines and method of making the same

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Three dimensional memory array architecture

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Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

Номер патента: WO2020146055A1. Автор: Tetsuya Shirasu,Akio Nishida,Yuji Fukano,Naohiro Hosoda,Kazuma Shimamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-16.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

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Three-dimensional memory device employing thinned insulating layers and methods for forming the same

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Three-dimensional memory device and method for manufacturing the same

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Manufacturing Methods of JFET-Type Compact Three-Dimensional Memory

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Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures

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Staircase structure with multiple divisions for three-dimensional memory

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(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate

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Channel structures for three-dimensional memory devices and methods for forming the same

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Three dimensional memory array architecture

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Three dimensional memory array architecture

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Three-dimensional memory device including a string selection line gate electrode having a silicide layer

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Three dimensional memory structure

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Three dimensional memory structure

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Three dimensional memory structure

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High κ gate stack on III-V compound semiconductors

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Monolithic three dimensional memory arrays formed using sacrificial polysilicon pillars

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Three-dimensional memory and fabricating method thereof

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Three dimensional memory device

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Growing III-V compound semiconductors from trenches filled with intermediate layers

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Semiconductor structure for three-dimensional memory device and manufacturing method thereof

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Method for fabricating three-dimensional memory

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Twin channel access device for vertical three-dimensional memory

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Twin channel access device for vertical three-dimensional memory

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Three-dimensional memory and formation method thereof

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Group iii-v compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common wafer

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Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate

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Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same

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Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same

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Three-dimensional memory device containing low resistance source-level contact and method of making thereof

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Three-dimensional memory device with reduced etch damage to memory films and methods of making the same

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Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof

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Three-dimensional memory device with support structures in gate line slits and methods for forming the same

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device having integrated support and contact structures and method of making thereof

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Multi-deck three-dimensional memory devices and methods for forming the same

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Multi-stack three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof

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Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

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Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device having epitaxially-grown semiconductor channel and method for forming the same

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Three-dimensional memory device containing epitaxial pedestals and top source contact and methods for making the same

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Three dimensional memory array architecture

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Three-dimensional memory devices having transferred interconnect layer and methods for forming same

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Three-dimensional memory devices having transferred interconnect layer and methods for forming same

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Three dimensional memory array architecture

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Three-dimensional memory device having parallel trench type capacitor and a method of manufacturing the three-dimensional memory device

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Three-dimensional memory devices

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Three-dimensional memory and method for manufacturing the same

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Three-dimensional memory and method for manufacturing the same

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Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

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Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

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Three-dimensional memory devices

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Three-dimensional memory device including variable thickness semiconductor channels and method of forming the same

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Three-dimensional memory devices and fabrication methods thereof

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Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

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Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the same

Номер патента: WO2020068184A1. Автор: Masatoshi Nishikawa,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-02.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20240196619A1. Автор: Ryo KAMBAYASHI,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device and method for forming the same

Номер патента: US20230282281A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory device with vertical semiconductor channels having semi-tubular sections at the drain-select-level and methods for making the same

Номер патента: WO2020163007A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,Tomohiro Kubo,James Kai,Takaaki IWAI,Masanori Tsutsumi,Sayako Nagamine,Ching-Huang Lu,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Номер патента: WO2021025730A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-11.

Memory cell protective layers in a three-dimensional memory array

Номер патента: WO2024123561A2. Автор: Farrell M. Good. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-06-13.

Three-dimensional memory and fabricating method thereof

Номер патента: US20230144830A1. Автор: YING Zhou,Ming Li,Zhenzhen Zhang,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Three-dimensional memory device including trench bridges and methods of forming the same

Номер патента: WO2024035487A1. Автор: Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-15.

Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process

Номер патента: US20240260275A1. Автор: Usha Raghuram,Jie Zhou,Kavita Shah,Eli Harari,Shohei KAMISAKA,Yosuke Nosho,Iting Lin. Владелец: Sunrise Memory Corp. Дата публикации: 2024-08-01.

Three-dimensional memory and manufacturing method therefor, and storage system

Номер патента: EP4440277A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Three-dimensional memory device containing laterally-undulating lateral isolation trenches and methods of forming the same

Номер патента: US20240064983A1. Автор: Tomohiro Kubo,Takashi Kashimura,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

Three dimensional memory device

Номер патента: US12137570B2. Автор: Yih Wang,Yu-Ming Lin,Chia-Ta Yu,Sai-Hooi Yeong,Yi-Ching Liu,Chia-En HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12069871B2. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357838A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

Номер патента: US20240064985A1. Автор: Peng Zhang,Masanori Tsutsumi,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: EP3262685A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Offset backside contact via structures for a three-dimensional memory device

Номер патента: EP3420590A1. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-02.

Three-dimensional memory device with dielectric or semiconductor wall support structures and method of forming the same

Номер патента: US11963354B2. Автор: Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-16.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: US20240312521A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2024-09-19.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: WO2024191628A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-09-19.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: WO2022216337A1. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-10-13.

Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same

Номер патента: US11877446B2. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: US11991881B2. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-21.

Three-dimensional memories, manufacturing methods thereof, and memory systems

Номер патента: US20240365544A1. Автор: Jie Yuan,Yali SONG,Quanshan Lv. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-31.

Contact structures for three-dimensional memory device

Номер патента: US11910599B2. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-20.

Three-dimensional memory device and method for forming the same

Номер патента: WO2023165379A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

Memory cell protective layers in a three-dimensional memory array

Номер патента: US20240188308A1. Автор: Farrell M. Good. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Three-dimensional memory device with a conductive drain-select-level spacer and methods for forming the same

Номер патента: US12010835B2. Автор: Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-11.

Three-dimensional memory device and method for forming the same

Номер патента: US20240206166A1. Автор: Shiwei HE,Hsien-Shih Chu,Yongjian Yu,Guoguo Kong,Canfa Dai,Detianyu Diao. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

Номер патента: US20240172439A1. Автор: Wei Xu,QI Hao,BIN Yuan,Zongke Xu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230337436A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: US20240357794A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: Micron Technology Inc. Дата публикации: 2024-10-24.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: WO2024226340A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-10-31.

Three-dimensional memory array formation techniques

Номер патента: US20240188299A1. Автор: Wenjie Li,George Matamis,Christopher J. Larsen,S M Istiaque Hossain,Lingyu Kong,David A. Daycock,Sok Han Wong,Kevin R. Gast,Lhaang Chee Ooi. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130120A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Three-dimensional memory and manufacturing method thereof

Номер патента: US20230140992A1. Автор: Wei Xu,Ming Zeng,Qingqing WANG,Jianlu Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Integrated Neuro-Processor Comprising Three-Dimensional Memory Array

Номер патента: US20170270403A1. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2017-09-21.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US12131794B2. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-10-29.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: US12133388B2. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-29.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: US20240276725A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Three-dimensional memory device containing low resistance source-level contact and method of making thereof

Номер патента: WO2021262236A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-30.

Three-dimensional memory device with through-stack contact via structures and method of making the same

Номер патента: US20240215243A1. Автор: Tomohiro Kubo,Masato Miyamoto,Koichi Matsuno,Masanori Tsutsumi,Takumi Moriyama,Michio Oryoji,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260266A1. Автор: Hiroyuki Tanaka,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device and method for forming the same

Номер патента: US12075621B2. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-27.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: US20240306386A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: WO2024186381A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240237350A1. Автор: Bing Zhou,Senaka Kanakamedala,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Multiple transistor architecture for three-dimensional memory arrays

Номер патента: US12119056B2. Автор: Ferdinando Bedeschi. Владелец: Micron Technology Inc. Дата публикации: 2024-10-15.

Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

Номер патента: US20240251560A1. Автор: Hirofumi TOKITA,Toshiyuki Isome. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260267A1. Автор: Takashi Kudo,Ryota Suzuki,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: WO2024158467A1. Автор: Hiroyuki Tanaka,Takashi Kudo,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Nobuyuki Fujimura,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-02.

Three-dimensional memory array and operation scheme

Номер патента: US20140160836A1. Автор: Chung H. Lam,Sangbum Kim. Владелец: International Business Machines Corp. Дата публикации: 2014-06-12.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: WO2023146568A1. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-03.

Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

Номер патента: US20240237344A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan,Sarath Puthenthermadam,Longju LIU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings

Номер патента: WO2024118177A1. Автор: Hiroyuki Ogawa,Koichi Matsuno,Takaaki IWAI,Naohiro Hosoda,Takayuki MAEKURA,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same

Номер патента: US20240040786A1. Автор: Yusuke Yoshida,Shigeyuki Yoshida,Teruo OKINA,Takanori Hanada. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-01.

Three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US12089405B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Three-dimensional memory device containing insulated gate located over a top source layer for applying gidl erase voltage and method for manufacturing the same

Номер патента: US20240292616A1. Автор: Satoshi Shimizu,Takaaki IWAI,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-29.

Neuromorphic computing device with three-dimensional memory

Номер патента: US20230385625A1. Автор: Yih Wang,Chia-En HUANG,Wen-Chang Cheng,Chieh Lee,Yi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Three-dimensional memory device containing self-aligned ferroelectric memory elements and method of making the same

Номер патента: US20240130137A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

Three-dimensional memory device and method of forming the same

Номер патента: US20240268111A1. Автор: Pi-Shan Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-08.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240244844A1. Автор: Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

Three-dimensional memory and control method thereof

Номер патента: US11864379B2. Автор: LEI Jin,Jianquan Jia,Yali SONG,XiangNan Zhao,Yuanyuan MIN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-02.

Redundant array of independent NAND for a three-dimensional memory array

Номер патента: US11797383B2. Автор: Jung Sheng Hoei,Peter Feeley,Kishore K. Muchherla,Sampath K. Ratnam,Sivagnanam Parthasarathy,Renato C. Padilla. Владелец: Micron Technology Inc. Дата публикации: 2023-10-24.

Source structure of three-dimensional memory device and method for forming the same

Номер патента: EP4258843A3. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-07.

Three-dimensional memory devices having channel cap structures and methods for forming the same

Номер патента: US20240349501A1. Автор: Bing Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-17.

Methods for forming three-dimensional memory devices, and related structures

Номер патента: US20120199987A1. Автор: Nishant Sinha,Krishna K. Parat. Владелец: Micron Technology Inc. Дата публикации: 2012-08-09.

Three-dimensional memory array and method for manufacturing same

Номер патента: EP4432802A1. Автор: Young Wook Park,Jin Ho Ahn. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-09-18.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US20240071465A1. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: US20240196610A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20230276620A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory device and method for forming the same

Номер патента: WO2022246789A1. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-12-01.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12048148B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282003A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory devices

Номер патента: EP3942611A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-26.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: US12133385B2. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Three-dimensional memory device including variable thickness semiconductor channels and method of forming the same

Номер патента: WO2024010654A1. Автор: Tadashi Nakamura,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-11.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20240251558A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-25.

Three-dimensional memory device and fabrication method thereof

Номер патента: EP3912188A1. Автор: Linchum WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-24.

Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings

Номер патента: US20240179906A1. Автор: Hiroyuki Ogawa,Koichi Matsuno,Naohiro Hosoda,Takayuki MAEKURA,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory device containing discrete charge storage elements and methods for forming the same

Номер патента: US20240121960A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-11.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215273A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

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Three-dimensional memory device without gate line slits and method for forming the same

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