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Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers

Номер патента: US11894298B2
Опубликовано: 06-02-2024
Автор(ы): Genta Mizuno, Kazuki ISOZUMI, Masanori Tsutsumi, Naohiro Hosoda, Ryo Nakamura, Shuichi HAMAGUCHI, Yu Ueda, Yusuke Mukae
Принадлежит: SanDisk Technologies LLC
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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Decoder architectures for three-dimensional memory devices

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Word line decoder circuitry under a three-dimensional memory array

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Word line structure of three-dimensional memory device

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Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11800710B2. Автор: Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-24.

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Номер патента: US20230282280A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory devices and fabricating methods thereof

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Multiple-stack three-dimensional memory device and fabrication method thereof

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Techniques for concurrently-formed cavities in three-dimensional memory arrays

Номер патента: US20230395511A1. Автор: David H. Wells,Yoshiaki Fukuzumi. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

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Multiple-stack three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device and method for forming the same

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Номер патента: EP4289005A1. Автор: Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Multiple-stack three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device containing memory opening monitoring area and methods of making the same

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Three-dimensional memory device containing memory opening monitoring area and methods of making the same

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Номер патента: US20210090992A1. Автор: Li Li,Hinoue Tatsuya,KASAI Yuki. Владелец: . Дата публикации: 2021-03-25.

DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THREE-DIMENSIONAL MEMORY DEVICES

Номер патента: US20170162597A1. Автор: Alsmeier Johann,Makala Raghuveer S.,SHARANGPANI Rahul,Koka Sateesh,RANGANATHAN Srikanth,JUANITAS Mark. Владелец: . Дата публикации: 2017-06-08.

Three-dimensional memory device with backside word line contact via structures and methods of forming the same

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Three-dimensional memory device with backside word line contact via structures and methods of forming the same

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Three-dimensional memory device containing dummy stack edge seal structure and methods for forming the same

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Bonded three-dimensional memory device having temporary electrical grounding paths in dummy block and methods of making the same

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Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same

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Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same

Номер патента: US20240015960A1. Автор: Hiroaki Namba. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-11.

Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same

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THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SILICON NITRIDE RING IN AN OPENING IN A MEMORY FILM AND METHOD OF MAKING THE SAME

Номер патента: US20210036004A1. Автор: SHIMIZU Satoshi,PACHAMUTHU Jayavel,KASAI Yuki,Moriyama Takumi,DOWAKI Yasushi. Владелец: . Дата публикации: 2021-02-04.

Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same

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Structures and methods for reducing stress in three-dimensional memory device

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Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

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Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

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Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

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Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

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Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

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Three-dimensional memory device including schottky barrier source contacts and methods of forming the same

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Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

Номер патента: US20240237355A9. Автор: Bing Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Monica TITUS. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same

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Three-dimensional memory structure fabrication using channel replacement

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Cavity-disrupting backside trench fill structures for a three-dimensional memory device and method of making the same

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Within array replacement openings for a three-dimensional memory device

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Three-dimensional memory device with separated contact regions and methods for forming the same

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Three-dimensional memory device with separated contact regions and methods for forming the same

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Three-dimensional memory device containing variable thickness word lines with reduced length metal nitride diffusion barriers and methods for forming the same

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Three-dimensional memory device containing integrated contact-and-support assemblies and methods of making the same

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Stairless three-dimensional memory device containing meandering dielectric isolation structure and methods of forming the same

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Three-dimensional memory device and method

Номер патента: US12022659B2. Автор: Chung-Te Lin,Feng-Cheng Yang,Yu-Ming Lin,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

L-type wordline connection structure for three-dimensional memory

Номер патента: US20230146831A1. Автор: Sony Varghese,Tomohiko Kitajima,Gill Yong Lee,Sung-Kwan Kang,Chang Seok Kang,Fred Fishburn. Владелец: Applied Materials Inc. Дата публикации: 2023-05-11.

L-type wordline connection structure for three-dimensional memory

Номер патента: WO2023080953A1. Автор: Sony Varghese,Tomohiko Kitajima,Gill Yong Lee,Sung-Kwan Kang,Chang Seok Kang,Fred Fishburn. Владелец: Applied Materials, Inc.. Дата публикации: 2023-05-11.

Three-dimensional memory structures with low source line resistance

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MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIELECTRIC SPACERS WITHIN MEMORY OPENINGS AND METHODS OF MAKING THE SAME

Номер патента: US20170236835A1. Автор: YONEMOCHI Yasuaki,LIU Jin,OGAWA Hiroyuki,Kinoshita Hiroyuki,NAKAMURA Tadashi,Tokunaga Kazuya,Yoshizawa Kazutaka,XU Jiyin,GUNJI-YONEOKA Marika,BAENNINGER Matthias,Chowdhury Murshed,IWATA Dai. Владелец: . Дата публикации: 2017-08-17.

Method of making self-assembling floating gate electrodes for a three-dimensional memory device

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Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

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Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

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Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

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Three-dimensional memory array including dual work function floating gates and method of making the same

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Three-dimensional memory device containing metal-organic framework inter-word line insulating layers and methods of forming the same

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Staircase structure with multiple divisions for three-dimensional memory

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device including bottle-shaped memory stack structures and methods of making the same

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Three-dimensional memory device and method for manufacturing the same

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Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

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Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

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Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

Номер патента: US20220045091A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device employing thinned insulating layers and methods for forming the same

Номер патента: US20210335805A1. Автор: James Kai,Johann Alsmeier,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-10-28.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

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Monolithic three dimensional memory arrays formed using sacrificial polysilicon pillars

Номер патента: US09646880B1. Автор: Seje TAKAKI,Teruyuki Mine. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-09.

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

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Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof

Номер патента: US09812505B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-07.

Semiconductor structure for three-dimensional memory device and manufacturing method thereof

Номер патента: US20200312866A1. Автор: Yuan-Chieh Chiu,Yao-An Chung. Владелец: Macronix International Co Ltd. Дата публикации: 2020-10-01.

Channel structures for three-dimensional memory devices and methods for forming the same

Номер патента: US20230276623A9. Автор: Zhiliang Xia,Xiaoxin LIU,Xiaolong Du,Tingting Gao,Wanbo Geng,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory device containing integrated contact-and-support assemblies and methods of making the same

Номер патента: WO2024137025A1. Автор: Hiroyuki Ogawa,Tomohiro Kubo,Masato Miyamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional flat nand memory device including wavy word lines and method of making the same

Номер патента: US20200098787A1. Автор: Ryosuke Kaneko. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

Номер патента: US20230284443A1. Автор: Ryo Yoshimoto,Shinsuke YADA,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-09-07.

Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

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Three-dimensional memory device with contact via structures located over support pillar structures and method of making thereof

Номер патента: WO2023163732A1. Автор: Xiang Yin. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof

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Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

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A three-dimensional memory device having a shielding layer and a method for forming a three-dimensional memory device

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Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: US12022656B2. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

Three-dimensional memory device having staircase structure and method for forming the same

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Three-dimensional memory devices and system having the same

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Three-dimensional memory devices, systems, and methods for forming the same

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Contact structures for three-dimensional memory

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Contact structures for three-dimensional memory

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Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

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Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Semiconductor structure, three-dimensional memory, memory system, and electronic device

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Method of making a three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device employing thinned insulating layers and methods for forming the same

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Three-dimensional memory device including discrete charge storage elements and methods of forming the same

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Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

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Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

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Metal word lines for three dimensional memory devices

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Three-dimensional memory device with divided drain select gate lines and method for forming the same

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Metal word lines for three dimensional memory devices

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Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof

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Channel structures having protruding portions in three-dimensional memory device and method for forming the same

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Channel structures having protruding portions in three-dimensional memory device and method for forming the same

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Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

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Three-dimensional memory device with reduced local stress

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Metal word lines for three dimensional memory devices

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Methods for forming three-dimensional memory devices

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Three-dimensional memory device with divided drain select gate lines and method for forming the same

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Method for forming three-dimensional memory device with sacrificial channels

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Three-dimensional memory devices and fabrication methods thereof

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Three-dimensional memory device and fabrication method for improved yield and reliability

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Three-dimensional memory device with ferroelectric material

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Three-dimensional memory devices and fabrication methods thereof

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Three-dimensional memory devices and fabrication methods thereof

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Manufacturing method of three-dimensional memory device with improved RC delay

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Select gate transistor with single crystal silicon for three-dimensional memory

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device

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Three-dimensional memory device

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Method for forming channel hole plug of three-dimensional memory device

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Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Methods for forming three-dimensional memory device having channel structures with native oxide layer

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Three-dimensional memory device with ferroelectric material

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Three-Dimensional Memory Device with Ferroelectric Material

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Three-Dimensional Memory Device and Method

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Three-dimensional memory device including a string selection line gate electrode having a silicide layer

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Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

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Three dimensional memory array architecture

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Three dimensional memory array architecture

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Three dimensional memory array architecture

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Three-Dimensional Memory, Chip Package Structure, and Electronic Device

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Passive devices for integration with three-dimensional memory devices

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Three-dimensional memory, chip packaging structure, and electronic device

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Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

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Transition structures for three-dimensional memory arrays

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Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Three-dimensional memory device containing bit line switches

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Three-dimensional memory and fabricating method thereof

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Twin channel access device for vertical three-dimensional memory

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Method for fabricating three-dimensional memory

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Three-dimensional memory and formation method thereof

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Passive devices for integration with three-dimensional memory devices

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Three-dimensional memory device and manufacturing method therefor, and three-dimensional memory

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Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories

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Memory cell capacitor structures for three-dimensional memory arrays

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Three-dimensional memory and fabrication method thereof

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Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device and method of manufacturing the same

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Multiple transistor architecture for three-dimensional memory arrays

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Dense piers for three-dimensional memory arrays

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Sparse piers for three-dimensional memory arrays

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Memory device containing cobalt silicide control gate electrodes and method of making thereof

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Three-dimensional p-i-n memory device and method of reading thereof using hole current detection

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Three-dimensional memory device including hammerhead-shaped word lines and methods of manufacturing the same

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Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel

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Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack

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Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof

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Alternating refractive index in charge-trapping film in three-dimensional memory

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Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

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Methods for forming three-dimensional memory device without conductor residual caused by dishing

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device with logic signal routing through a memory die and methods of making the same

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Three-dimensional memory device with ferroelectric material

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Three-dimensional flat nand memory device having curved memory elements and methods of making the same

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Three-dimensional P-I-N memory device and method reading thereof using hole current detection

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Multi-stack three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device having multi-deck structure and methods for forming the same

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Three-dimensional memory device comprising contact pads exposed by an opening passing through layer stack and fabrication method thereof

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Contact pads of three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device with aluminum-containing etch stop layer for backside contact structure and method of making thereof

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Three-dimensional memory devices

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Staircase etch control in forming three-dimensional memory device

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Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof

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Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same

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3d memory device and programming method thereof

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Erase-verify method for three-dimensional memories and memory system

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Apparatus, system and method to sense a logic state of a memory cell in a three-dimensional memory device

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Semiconductor memory device including three-dimensional memory cell array structure and operating method thereof

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ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

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ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

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