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Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210225874A1
Опубликовано: 22-07-2021
Автор(ы): Li Hong XIAO
Принадлежит: Yangtze Memory Technologies Co Ltd
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Methods for forming three-dimensional memory devices

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Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

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Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

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Номер патента: WO2024123475A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

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Номер патента: US20210167086A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory with super-pillar

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Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectric

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Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

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Through array contact structure of three-dimensional memory device

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Staircase structures for three-dimensional memory device double-sided routing

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Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

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Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

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Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

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Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

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Three-dimensional memory device and manufacturing method thereof

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Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory devices with channel structures having plum blossom shape

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Three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

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Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

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Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

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Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

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Method for fabricating three-dimensional memory device by thickening an epitaxial layer

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Three-dimensional memory device with support structures in gate line slits and methods for forming the same

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Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

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Three-dimensional memory device with reduced etch damage to memory films and methods of making the same

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Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same

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Three-dimensional memory devices and fabrication methods thereof

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Three-dimensional memory device having integrated support and contact structures and method of making thereof

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Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

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Three-dimensional memory device with angled word lines and method of making thereof

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Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

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Offset backside contact via structures for a three-dimensional memory device

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

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Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

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Three-dimensional memory device having parallel trench type capacitor and a method of manufacturing the three-dimensional memory device

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Three-dimensional memory device having parallel trench type capacitor

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory devices and fabricating methods thereof

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Passive devices for integration with three-dimensional memory devices

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

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Three-dimensional memory device

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Three-dimensional memory, chip packaging structure, and electronic device

Номер патента: EP4333062A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-03-06.

Memory cell capacitor structures for three-dimensional memory arrays

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Dense piers for three-dimensional memory arrays

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Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

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Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

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Three-dimensional memory device containing source rails and method of making the same

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Three-dimensional memory device including stairless word line contact structures and method of making the same

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Trench structures for three-dimensional memory devices

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Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same

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Three-dimensional memory device with word-line etch stop liners and method of making thereof

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Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same

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Three-dimensional memory device with staircase etch stop structures and methods for forming the same

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Three-dimensional memory and method for forming same

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Three-dimensional memory device

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Three-dimensional memory device with separated source-side lines and method of making the same

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Transition structures for three-dimensional memory arrays

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Three-dimensional memory

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Channel structures for three-dimensional memory devices and methods for forming the same

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Word line structure of three-dimensional memory device

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Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

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Word line decoder circuitry under a three-dimensional memory array

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Three-dimensional memory and formation method thereof

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Three-dimensional memory array incorporating serial chain diode stack

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Three-dimensional memory arrays with layer selector transistors

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Three-dimensional memory device with vias connected to staircase structure

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Sparse piers for three-dimensional memory arrays

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Method for fabricating three-dimensional memory

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Twin channel access device for vertical three-dimensional memory

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Three dimensional memory and method of operating the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Staircase bridge structures for word line contacts in three-dimensional memory

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and methods for forming the same

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Contact pads of three-dimensional memory device and fabrication method thereof

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Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof

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Staircase connection structure for three-dimensional memory devices

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Three-dimensional memory device and fabrication method for improved yield and reliability

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Номер патента: US20120001247A1. Автор: Alsmeier Johann. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

Номер патента: US20120001252A1. Автор: Alsmeier Johann,Purayath Vinod Robert,Chien Henry,Matamis George,Lee Yao-Sheng,Kai James,Zhang Yuan. Владелец: SanDisk Corporation. Дата публикации: 2012-01-05.

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