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Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

Номер патента: US20230023523A1
Опубликовано: 26-01-2023
Автор(ы): Hiromi MINAMITANI, Kei NOZAWA, Yusuke Yoshida
Принадлежит: SanDisk Technologies LLC
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Passive devices for integration with three-dimensional memory devices

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Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

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Three-dimensional memory device containing bit line switches

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Multiple transistor architecture for three-dimensional memory arrays

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Method for fabricating three-dimensional memory

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Transition structures for three-dimensional memory arrays

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Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

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Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

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Methods for forming three-dimensional memory device having channel structures with native oxide layer

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Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

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Three-dimensional memory device including stairless word line contact structures and method of making the same

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Three-dimensional memory device with staircase etch stop structures and methods for forming the same

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device

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Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

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Three-dimensional memory device with high contact via density and methods of forming the same

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Three-dimensional memory device with backside support pillar structures and methods of forming the same

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Three-dimensional memory device and method for fabricating the same

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device containing a dummy memory film isolation structure and method of making thereof

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Three-dimensional memory device employing thinned insulating layers and methods for forming the same

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Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

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Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

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Three-dimensional memory device including backside trench support structures and methods of forming the same

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Three-dimensional memory device including backside trench support structures and methods of forming the same

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Three-dimensional memory device including backside trench support structures and methods of forming the same

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Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same

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Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof

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Non-volatile three-dimensional memory cell, storage method, and chip assembly

Номер патента: US20240320180A1. Автор: Jun Zhou,Bin Hou,Fengguo ZUO. Владелец: Xian Unilc Semiconductors Co Ltd. Дата публикации: 2024-09-26.

Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof

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Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the same

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Three-dimensional memory device having a transition metal dichalcogenide channel

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Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same

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Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same

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Method of manufacturing three-dimensional memory device with vias connected to staircase structure

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Method of reducing control gate electrode curvature in three-dimensional memory devices

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Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

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Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same

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Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

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Three-dimensional memory device with separated source-side lines and method of making the same

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Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same

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Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

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Three-dimensional memory device with separated source lines and method of making the same

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Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

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Three-dimensional memory device with dielectric isolated via structures and methods of making the same

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Inter-plane offset in backside contact via structures for a three-dimensional memory device

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Compact three-dimensional memory

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Three-dimensional memory device with a columnar memory opening arrangement and method of making thereof

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Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

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Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Manufacturing Methods of JFET-Type Compact Three-Dimensional Memory

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device

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Support structures for three dimensional memory arrays

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Monolithic three dimensional memory arrays with staggered vertical bit line select transistors and methods therfor

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Three-dimensional memory device with peripheral circuit located over support pillar array and method of making thereof

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Test equipment for testing semiconductor device and methods of testing semiconductor device using the same

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Mask for crystallizing and method of crystallizing amorphous silicon using the same

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device containing insulated gate located over a top source layer for applying gidl erase voltage and method for manufacturing the same

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Three-dimensional memory devices with drain select gate cut and methods for forming and operating the same

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Three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device and method for forming the same

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Source structure of three-dimensional memory device and method for forming the same

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Three-dimensional memory device with separated contact regions and methods for forming the same

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Three-dimensional memory device

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Three-dimensional memory device

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Passive devices for integration with three-dimensional memory devices

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Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

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Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

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Three-Dimensional Memory, Chip Package Structure, and Electronic Device

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Three-dimensional memory, chip packaging structure, and electronic device

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Redundant array of independent NAND for a three-dimensional memory array

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Three-dimensional memory device and method for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices with support structures and methods for forming the same

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Contact structures for three-dimensional memory

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Contact structures for three-dimensional memory

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Three-dimensional memory device and methods for forming the same

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Three-dimensional memory device having staircase structure and method for forming the same

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Three-dimensional memory devices, systems, and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Local contacts of three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Local contacts of three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and system having the same

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Methods for forming three-dimensional memory devices with supporting structure for staircase region

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Contact structures for three-dimensional memory

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Three-dimensional memory device with source line isolation and method of making the same

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Three-dimensional memory device with source line isolation and method of making the same

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Multiple-stack three-dimensional memory device and fabrication method thereof

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Coreless board for semiconductor package, method of manufacturing the same, and method of manufacturing semiconductor package using the same

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Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same

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Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same

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Three dimensional memory device

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Three-dimensional memory array and operation scheme

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Three-dimensional memory device with a conductive drain-select-level spacer and methods for forming the same

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Structures for word line multiplexing in three-dimensional memory arrays

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Structures for word line multiplexing in three-dimensional memory arrays

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Three-dimensional memory device including through-memory-level via structures and methods of making the same

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Three-dimensional memory device with layer contact via structures located in a memory array region and methods of forming the same

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Three dimensional memory array with select device

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Three dimensional memory array architecture

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Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Номер патента: US20210036018A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-04.

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Номер патента: US12101936B2. Автор: Akio Nishida,Yusuke Mukae,Masanori Tsutsumi,Ramy Nashed Bassely SAID,Tatsuya Hinoue,Ryousuke ITOU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-24.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

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Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same

Номер патента: WO2020185267A1. Автор: Johann Alsmeier,Tae-Kyung Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-17.

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384207A1. Автор: Junpei Kanazawa,Takaaki IWAI,Hironori Matsuoka,Hisakazu Otoi,Raiden MATSUNO. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Three-dimensional memory device containing metal-organic framework inter-word line insulating layers and methods of forming the same

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

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Three-dimensional memory device and method of forming the same

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Three-dimensional memory device including wrap around word lines and methods of forming the same

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Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

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Method of making self-assembling floating gate electrodes for a three-dimensional memory device

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Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation

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Three-dimensional memory devices containing memory stack structures with position-independent threshold voltage

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Three-dimensional memory devices containing memory block bridges

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Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

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Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

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Method of making a three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

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Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

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Method of making a three-dimensional memory array with etch stop

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Three dimensional memory array architecture

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Three dimensional memory array architecture

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Three-dimensional memory device containing channels with laterally pegged dielectric cores and methods for making the same

Номер патента: US20200251486A1. Автор: Raghuveer S. Makala,Masanori Tsutsumi,Senaka Kanakamedala,Manabu Kakazu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: WO2021242328A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: WO2023048778A1. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-03-30.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: US12035520B2. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-09.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230129701A1. Автор: Hyun Soo Shin,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US20210091093A1. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11723209B2. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-08.

Three-dimensional memory device including bottle-shaped memory stack structures and methods of making the same

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Three-dimensional memory device and method of manufacturing the same

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Three-dimensional memory device with drain-select-level isolation structures and method of making the same

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Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

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Three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device and method for manufacturing the same

Номер патента: US11778823B2. Автор: Hang-Ting Lue,Teng-Hao Yeh,Guan-Ru Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2023-10-03.

Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

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Three-dimensional memory device employing thinned insulating layers and methods for forming the same

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Selective floating gate semiconductor material deposition in a three-dimensional memory structure

Номер патента: WO2016089470A1. Автор: Hiroyuki Kamiya,Kensuke Yamaguchi. Владелец: SANDISK TECHNOLOGIES, INC.. Дата публикации: 2016-06-09.

Three-dimensional memory and method for forming same

Номер патента: US20230345710A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-26.

Three-dimensional memory devices with deep isolation structures

Номер патента: US20210013088A1. Автор: LIANG Chen,WEI Liu,Cheng GAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-01-14.

Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same

Номер патента: US11882702B2. Автор: Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-23.

Three-dimensional memory array including dual work function floating gates and method of making the same

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Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

Номер патента: EP3619744A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

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On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: US20190035803A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: EP3619742A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: WO2019022814A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US11805649B2. Автор: Yanli Zhang,James Kai,Johann Alsmeier,Srinivas Pulugurtha. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-31.

Control Gate Structures in Three-Dimensional Memory Devices and Methods for Forming the Same

Номер патента: US20240015961A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-11.

Channel structures for three-dimensional memory devices and methods for forming the same

Номер патента: US20230276623A9. Автор: Zhiliang Xia,Xiaoxin LIU,Xiaolong Du,Tingting Gao,Wanbo Geng,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US20200295030A1. Автор: Johann Alsmeier,Tae-Kyung Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-17.

Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US20210358946A1. Автор: Yanli Zhang,James Kai,Johann Alsmeier,Srinivas Pulugurtha. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Three-dimensional memory device with drain-select-level isolation structures and method of making the same

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Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

Номер патента: US20220045091A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: WO2024118160A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device and manufacturing method therefor, and three-dimensional memory

Номер патента: EP4266369A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-25.

Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories

Номер патента: US20230422528A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

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Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures

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Three-dimensional memory and method for manufacturing the same

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Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

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Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: EP3494596A1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-06-12.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

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Staircase structure with multiple divisions for three-dimensional memory

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Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectric

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Contact structures for three-dimensional memory device

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Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

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Contact structures for three-dimensional memory device

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Contact structures for three-dimensional memory device

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Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

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Three-dimensional memory device with word-line etch stop liners and method of making thereof

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Three-dimensional memory device, manufacturing method thereof, and memory system

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Three-dimensional memory deivce, manufacturing method thereof, and memory system

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Three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device including a string selection line gate electrode having a silicide layer

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Dense piers for three-dimensional memory arrays

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Three dimensional memory device

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Three-dimensional memory devices and fabricating methods thereof

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Trench structures for three-dimensional memory devices

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Three-dimensional memory, the manufacturing method for the same, and memory system

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Monolithic three dimensional memory arrays formed using sacrificial polysilicon pillars

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory devices and fabricating methods thereof

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Semiconductor structure for three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device and manufacturing method thereof

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Trench and pier architectures for three-dimensional memory arrays

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Twin channel access device for vertical three-dimensional memory

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Twin channel access device for vertical three-dimensional memory

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Three dimensional memory

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Merged cavities and buried etch stops for three-dimensional memory arrays

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Three-dimensional memory and formation method thereof

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Three-dimensional memory and fabrication method thereof

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Multi-deck three-dimensional memory devices and methods for forming the same

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Multi-deck three-dimensional memory devices and methods for forming the same

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Three-dimensional memory device and method for forming the same

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Three-dimensional memory device and method for enhanced page register reset

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Three-dimensional memory device and method for enhanced page register reset

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices having hydrogen blocking layer and fabrication methods thereof

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Method of forming three-dimensional memory device

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Three-dimensional memory apparatuses and methods of use

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Input/output reference voltage training method in three-dimensional memory devices

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Input/output reference voltage training method in three-dimensional memory devices

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Three-dimensional memory and manufacturing method therefor, and storage system

Номер патента: EP4440277A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Systems and methods for adaptive write training of three dimensional memory

Номер патента: US20220293153A1. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2022-09-15.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: WO2022216337A1. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-10-13.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: US11991881B2. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-21.

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

Номер патента: WO2023163740A1. Автор: Kazuto Watanabe,Koichi Matsuno,Kota Funayama,Youko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same

Номер патента: US11877446B2. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device and method for forming the same

Номер патента: US20240206166A1. Автор: Shiwei HE,Hsien-Shih Chu,Yongjian Yu,Guoguo Kong,Canfa Dai,Detianyu Diao. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: WO2016167984A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-20.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12069871B2. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357838A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Three-dimensional memory device and method for forming the same

Номер патента: WO2023165379A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

Memory cell protective layers in a three-dimensional memory array

Номер патента: US20240188308A1. Автор: Farrell M. Good. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Offset backside contact via structures for a three-dimensional memory device

Номер патента: EP3420590A1. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-02.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Three-dimensional memories, manufacturing methods thereof, and memory systems

Номер патента: US20240365544A1. Автор: Jie Yuan,Yali SONG,Quanshan Lv. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-31.

Three-dimensional memory device with vertical semiconductor channels having semi-tubular sections at the drain-select-level and methods for making the same

Номер патента: WO2020163007A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,Tomohiro Kubo,James Kai,Takaaki IWAI,Masanori Tsutsumi,Sayako Nagamine,Ching-Huang Lu,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

Contact structures for three-dimensional memory device

Номер патента: US11910599B2. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-20.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: EP3262685A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

Номер патента: US20240172439A1. Автор: Wei Xu,QI Hao,BIN Yuan,Zongke Xu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: US20240357794A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: Micron Technology Inc. Дата публикации: 2024-10-24.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: WO2024226340A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-10-31.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230337436A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Three-dimensional memory and manufacturing method thereof

Номер патента: US20230140992A1. Автор: Wei Xu,Ming Zeng,Qingqing WANG,Jianlu Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130120A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Three dimensional memory device and method for manufacturing the same

Номер патента: US20240203463A1. Автор: Murat Kerem Akarvardar,Xiaochen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Method of measuring refractive index of semiconductor memory device and method of classifying product group using the same

Номер патента: US20240331788A1. Автор: Ho Jung KANG,Tae Un Youn,Nam Cheol JEON. Владелец: SK hynix Inc. Дата публикации: 2024-10-03.

Systems and methods for adaptive read training of three dimensional memory

Номер патента: US20220276805A1. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2022-09-01.

Systems and methods for adaptive read training of three dimensional memory

Номер патента: US20220066694A1. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2022-03-03.

Systems and methods for adaptive read training of three dimensional memory

Номер патента: US11733915B2. Автор: YANG LU,Christopher Heaton Stoddard. Владелец: Micron Technology Inc. Дата публикации: 2023-08-22.

Apparatus, method and system to implement a dual vdm scheme on a three-dimensional memory architecture

Номер патента: US20230289099A1. Автор: Kevin E. Arendt,Sandeep Kumar Guliani,Yasir Mohsin Husain,Xuming Zhao. Владелец: Intel Corp. Дата публикации: 2023-09-14.

Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming

Номер патента: US20140022851A1. Автор: Jing Li,Chung H. Lam,Kailash Gopalakrishnan,Robert K. Montoye. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming

Номер патента: US20130223125A1. Автор: Jing Li,Chung H. Lam,John K. DeBrosse,Kailash Gopalakrishnan. Владелец: International Business Machines Corp. Дата публикации: 2013-08-29.

Method of and apparatus for reading out digital image data from three-dimensional memory

Номер патента: US5566279A. Автор: Yoichi Katayama. Владелец: NEC Corp. Дата публикации: 1996-10-15.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: US20240306386A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: WO2024186381A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260267A1. Автор: Takashi Kudo,Ryota Suzuki,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: WO2024158467A1. Автор: Hiroyuki Tanaka,Takashi Kudo,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Nobuyuki Fujimura,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-02.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260266A1. Автор: Hiroyuki Tanaka,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device and method of forming the same

Номер патента: US20240268111A1. Автор: Pi-Shan Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-08.

Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

Номер патента: US20240237344A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan,Sarath Puthenthermadam,Longju LIU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Methods for forming three-dimensional memory devices, and related structures

Номер патента: US20120199987A1. Автор: Nishant Sinha,Krishna K. Parat. Владелец: Micron Technology Inc. Дата публикации: 2012-08-09.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20230276620A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12048148B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240244844A1. Автор: Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

Three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US12089405B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory devices

Номер патента: EP3942611A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-26.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: US12133385B2. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Three-dimensional memory device with through-stack contact via structures and method of making the same

Номер патента: US20240215243A1. Автор: Tomohiro Kubo,Masato Miyamoto,Koichi Matsuno,Masanori Tsutsumi,Takumi Moriyama,Michio Oryoji,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: US20240276725A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: US12133388B2. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-29.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240237350A1. Автор: Bing Zhou,Senaka Kanakamedala,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory and fabrication method thereof

Номер патента: US12052871B2. Автор: Wei Xu,Pan Huang,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Three-dimensional memory array and method for manufacturing same

Номер патента: EP4432802A1. Автор: Young Wook Park,Jin Ho Ahn. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-09-18.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: US20240196610A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device without gate line slits and method for forming the same

Номер патента: US11963356B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11839079B2. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-05.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20230292511A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-14.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282003A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11950419B2. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206167A1. Автор: SHENG Peng,Jing Gao,Kai Yu,Wenbo Zhang,Lei Xue,Zhaohui Cheng,Zhiyong Lu,Zhangyi LI. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device and method for forming the same

Номер патента: EP4205175A1. Автор: LIANG Chen,WEI Liu,Shiqi HUANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-07-05.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215273A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A3. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-14.

Three-dimensional memory device with source structure and methods for forming the same

Номер патента: US11805650B2. Автор: Wei Xu,Pan Huang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

Three-dimensional memory device containing discrete charge storage elements and methods for forming the same

Номер патента: US20240121960A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-11.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206176A1. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device containing self-aligned ferroelectric memory elements and method of making the same

Номер патента: US20240130137A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4391762A2. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-26.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240224517A1. Автор: Yang Chen,Zhiliang Xia,Di Wang,Qingfu Zhang,Zongliang Huo,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-04.

Concentric staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US11849575B2. Автор: Zhong Zhang,Kun Zhang,Wenxi Zhou,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-19.

Methods for forming three-dimensional memory devices

Номер патента: US11877448B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20240251558A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-25.

Methods for forming three-dimensional memory devices

Номер патента: WO2021237881A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2021-12-02.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory devices

Номер патента: US20240164100A1. Автор: LIANG XIAO,Yi Zhao,Shu Wu,Wenbin Zhou,Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: WO2023146568A1. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-03.

Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

Номер патента: US20240179907A1. Автор: Masato Miyamoto,Hirofumi TOKITA,Akihisa SAI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory device and fabrication method thereof

Номер патента: EP3966867A1. Автор: Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-16.

Three-dimensional memory device and fabrication method thereof

Номер патента: US11980030B2. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023246209A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Dongxue Zhao,Dongyu FAN. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023246210A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Method for fabricating three-dimensional memory device by thickening an epitaxial layer

Номер патента: US11716853B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-01.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240172429A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: WO2024123475A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11877453B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory devices and fabricating methods thereof

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