Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same.

Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same

Номер патента: US20210265379A1
Опубликовано: 26-08-2021
Автор(ы): Daisuke Miyake, Tomoyuki OBU
Принадлежит: SanDisk Technologies LLC
Получить PDF файл: Открыть в новом окне

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384206A1. Автор: Takaaki IWAI,Hirofumi TOKITA,Yoshitaka Otsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Номер патента: US20210036018A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-04.

Three-dimensional memory device with drain-select-level isolation structures and method of making the same

Номер патента: US20200251489A1. Автор: Tomohiro Kubo,James Kai,Masanori Tsutsumi,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device including wrap around word lines and methods of forming the same

Номер патента: US20210358942A1. Автор: Yanli Zhang,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Control Gate Structures in Three-Dimensional Memory Devices and Methods for Forming the Same

Номер патента: US20240015961A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-11.

Three-dimensional memory deivce, manufacturing method thereof, and memory system

Номер патента: US20240130129A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20220293627A1. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same

Номер патента: US20210265379A1. Автор: Daisuke Miyake,Tomoyuki OBU. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-08-26.

Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same

Номер патента: US20210035998A1. Автор: Masatoshi Nishikawa,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-04.

Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same

Номер патента: US20210035999A1. Автор: Masatoshi Nishikawa,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-04.

Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof

Номер патента: US09978766B1. Автор: Takeshi Kawamura,Naohiro Hosoda,Kota Funayama,Yoko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-22.

Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof

Номер патента: US09953992B1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-24.

Three-dimensional memory devices containing memory block bridges

Номер патента: US09679906B2. Автор: Zhenyu Lu,Daxin Mao,Raghuveer S. Makala,Johann Alsmeier,George Matamis,Sateesh KOKA,Yao-Sheng Lee,Wenguang Shi,Chun GE. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-06-13.

Three-dimensional memory device containing channels with laterally pegged dielectric cores and methods for making the same

Номер патента: US20200251486A1. Автор: Raghuveer S. Makala,Masanori Tsutsumi,Senaka Kanakamedala,Manabu Kakazu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Contact structures for three-dimensional memory device

Номер патента: US20200194447A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-06-18.

Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same

Номер патента: US11882702B2. Автор: Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-23.

Contact structures for three-dimensional memory device

Номер патента: US20210265375A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-26.

Contact structures for three-dimensional memory device

Номер патента: US20230086425A1. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-23.

Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: US09524977B2. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-20.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130130A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Three dimensional memory device

Номер патента: US20210159243A1. Автор: Teng-Hao Yeh,Chih-Wei Hu. Владелец: Macronix International Co Ltd. Дата публикации: 2021-05-27.

Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

Номер патента: US20240064985A1. Автор: Peng Zhang,Masanori Tsutsumi,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Номер патента: WO2021025730A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-11.

Three-dimensional memory device with dielectric or semiconductor wall support structures and method of forming the same

Номер патента: US11963354B2. Автор: Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-16.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: WO2022216337A1. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-10-13.

Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same

Номер патента: US11991881B2. Автор: Hiroyuki Tanaka,Hiroyuki Ogawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-21.

Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same

Номер патента: US11877446B2. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

Номер патента: US20230328981A1. Автор: Takashi Kudo,Satoshi Shimizu,Zhixin Cui,Nobuyuki Fujimura,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Three-dimensional memory device without gate line slits and method for forming the same

Номер патента: US20200395375A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210225874A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-07-22.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20200312872A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Multi-division staircase structure of three-dimensional memory device and method for forming the same

Номер патента: US20210351200A1. Автор: Yuting Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-11.

Three-dimensional memory and fabrication method thereof

Номер патента: US20220028890A1. Автор: Wei Xu,Pan Huang,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-27.

Method for forming a three-dimensional memory device

Номер патента: US20190067324A1. Автор: Zhiliang Xia,Kun Zhang,Fandong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-02-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20210249436A1. Автор: Bo Xu,Lei DING,Chuan Yang,Ping Yan,Sen Zhang,Jing Gao,Lan Fang YU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20210118891A1. Автор: Bo Xu,Lei DING,Chuan Yang,Ping Yan,Sen Zhang,Jing Gao,Lan Fang YU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-22.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20190148401A1. Автор: Ding Lei,Bo Xu,Chuan Yang,Ping Yan,Sen Zhang,Jing Gao,Lan Fang YU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-05-16.

Three-dimensional memory device and method of manufacturing the same

Номер патента: US20220165747A1. Автор: Chih-Kai Yang,Tzung-Ting Han. Владелец: Macronix International Co Ltd. Дата публикации: 2022-05-26.

Three-dimensional memory device and method of forming the same

Номер патента: US20240268111A1. Автор: Pi-Shan Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-08.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20230276620A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12048148B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: US12133385B2. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11950419B2. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-02.

Three-dimensional memory device containing discrete charge storage elements and methods for forming the same

Номер патента: US20240121960A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-11.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206176A1. Автор: BIN Yuan,Zongke Xu,Qiangwei Zhang,Xiangning Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Concentric staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US11849575B2. Автор: Zhong Zhang,Kun Zhang,Wenxi Zhou,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-19.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4391762A2. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-26.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11877453B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11871567B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-09.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20200411545A1. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-31.

Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolation

Номер патента: US09659956B1. Автор: Tuan Pham,Henry Chien,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-23.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: US20190035803A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: WO2019022814A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-31.

Three-dimensional memory device with drain-select-level isolation structures and method of making the same

Номер патента: US20200251488A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,James Kai,Takaaki IWAI,Sayako Nagamine,Ching-Huang Lu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384207A1. Автор: Junpei Kanazawa,Takaaki IWAI,Hironori Matsuoka,Hisakazu Otoi,Raiden MATSUNO. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

Номер патента: EP3619742A1. Автор: Yanli Zhang,Johann Alsmeier,Masanori Tsutsumi,Shinsuke YADA,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230129701A1. Автор: Hyun Soo Shin,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

Номер патента: US11856765B2. Автор: Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-26.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20230403850A1. Автор: Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Merged cavities and buried etch stops for three-dimensional memory arrays

Номер патента: US20230397422A1. Автор: David H. Wells,Yoshiaki Fukuzumi,Byeung Chul Kim,Paolo Tessariol,Richard J. Hill. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Three-dimensional memory device containing low resistance source-level contact and method of making thereof

Номер патента: US20210408031A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-30.

Connection region between adjacent memory arrays for three-dimensional memory device with terrace regions and method of making thereof

Номер патента: EP3631856A1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-08.

Contact structures for three-dimensional memory device

Номер патента: US11910599B2. Автор: Zhiliang Xia,Ming Hu,Kun Zhang,Kun Bao,Zhongwang SUN,Guangji Li,Jiwei CHENG,Shijin LUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-20.

Three-dimensional memory device and method for forming the same

Номер патента: WO2023165379A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

Three-dimensional memories, manufacturing methods thereof, and memory systems

Номер патента: US20240365544A1. Автор: Jie Yuan,Yali SONG,Quanshan Lv. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-31.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: WO2016167984A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-20.

Three-dimensional memory device, manufacturing method thereof, and memory system

Номер патента: US20240130120A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

A metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

Номер патента: EP3262685A1. Автор: Tomohiro Kubo,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Sateesh KOKA,Junichi Ariyoshi. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Self-aligned isolation dielectric structures for a three-dimensional memory device

Номер патента: US09859363B2. Автор: Zhenyu Lu,Daxin Mao,Chun-Ming Wang,Makoto Yoshida,Tong Zhang,Johann Alsmeier,Jixin Yu,Kota Funayama,Chenche Huang,Lauren MATSUMOTO. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Three-dimensional memory devices with support structures and methods for forming the same

Номер патента: US12058865B2. Автор: Zhong Zhang,Wenxi Zhou,Yuhui HAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240188292A1. Автор: Zhiliang Xia,Di Wang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Shuangshuang WU,Cuicui Kong,Yuhui HAN,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-06.

Three-dimensional memory devices and system having the same

Номер патента: US20240206164A1. Автор: Han Yang,Lei Zhang,Zongliang Huo,Wenbin Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory devices

Номер патента: US20230115194A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-04-13.

Three-dimensional memory device containing low resistance source-level contact and method of making thereof

Номер патента: WO2021262236A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-30.

Three-dimensional memory device with multiple types of support pillar structures and method of forming the same

Номер патента: US12096632B2. Автор: Koichi Matsuno,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-17.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: US12133388B2. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-29.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: US20240306386A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: WO2024186381A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory devices

Номер патента: EP3942611A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-26.

Three-dimensional memory device without gate line slits and method for forming the same

Номер патента: US11963356B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282003A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

Three-dimensional memory and fabrication method thereof

Номер патента: US12052871B2. Автор: Wei Xu,Pan Huang,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20240251558A1. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-25.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A3. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-14.

Three-dimensional memory device with source structure and methods for forming the same

Номер патента: US11805650B2. Автор: Wei Xu,Pan Huang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Three-dimensional memory device and fabrication method thereof

Номер патента: US11980030B2. Автор: Zhiliang Xia,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-07.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20200395376A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20230413541A1. Автор: Kun Zhang,Wenxi Zhou,Shuangshuang WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20210167086A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Three-dimensional memory device and fabrication method

Номер патента: US20210296325A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-23.

Three-dimensional memory device including capped molybdenum word lines and method of making the same

Номер патента: US20230420370A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-28.

Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same

Номер патента: US11756877B2. Автор: Hisaya Sakai,Yoshitaka Otsu,Kota Funayama,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-09-12.

Three-dimensional memory device with high contact via density and methods of forming the same

Номер патента: US20240006310A1. Автор: Tomohiro Kubo,Hirofumi TOKITA,Fumiaki TOYAMA,Shiqian SHAO. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-04.

Three-dimensional memory device with a columnar memory opening arrangement and method of making thereof

Номер патента: US11849578B2. Автор: Tatsuya Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-19.

Three-dimensional memory device with thickened word lines in terrace region and method of making thereof

Номер патента: US20190148392A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Senaka Krishna Kanakamedala,Murshed CHOWDHURY,Yoshihiro Kanno. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-05-16.

Three-dimensional memory device including backside trench support structures and methods of forming the same

Номер патента: EP4049314A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-31.

Three-dimensional memory device including backside trench support structures and methods of forming the same

Номер патента: US20220181348A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-09.

Three-dimensional memory device including backside trench support structures and methods of forming the same

Номер патента: WO2022125143A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same

Номер патента: US20230328973A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same

Номер патента: US20240038667A1. Автор: Ryo Nakamura,Naohiro Hosoda. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-01.

Techniques for concurrently-formed cavities in three-dimensional memory arrays

Номер патента: US20230395511A1. Автор: David H. Wells,Yoshiaki Fukuzumi. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Support structures for three dimensional memory arrays

Номер патента: US20240047349A1. Автор: Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2024-02-08.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11974431B2. Автор: Zhiliang Xia,Zhong Zhang,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-30.

Three-dimensional memory device containing composite dielectric isolation structure in a staircase region and methods of forming the same

Номер патента: US20240334695A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same

Номер патента: EP3695439A1. Автор: Yanli Zhang,Masatoshi Nishikawa,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-19.

Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same

Номер патента: US11968825B2. Автор: Yanli Zhang,Zhen Chen. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20240196619A1. Автор: Ryo KAMBAYASHI,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device containing laterally-undulating lateral isolation trenches and methods of forming the same

Номер патента: US20240064983A1. Автор: Tomohiro Kubo,Takashi Kashimura,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-22.

Three-dimensional memory device with vertical semiconductor channels having semi-tubular sections at the drain-select-level and methods for making the same

Номер патента: WO2020163007A1. Автор: Wei Zhao,Yanli Zhang,Makoto Koto,Tomohiro Kubo,James Kai,Takaaki IWAI,Masanori Tsutsumi,Sayako Nagamine,Ching-Huang Lu,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

Three-dimensional memory device with a conductive drain-select-level spacer and methods for forming the same

Номер патента: US12010835B2. Автор: Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-11.

Three-dimensional memory device containing auxiliary support pillar structures and method of making the same

Номер патента: US20210358937A1. Автор: Kohei Yamaguchi,Kengo Kajiwara,Keisuke Shigemura. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Three-dimensional memory device containing deformation resistant trench fill structure and methods of making the same

Номер патента: US20230411306A1. Автор: Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-21.

Three-dimensional memory device containing deformation resistant trench fill structure and methods of making the same

Номер патента: WO2023244352A1. Автор: Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-21.

Methods and apparatus for three-dimensional nand non-volatile memory devices with side source line and mechanical support

Номер патента: US20180006054A1. Автор: Jin Liu,Johann Alsmeier,Chun GE. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-04.

Methods and apparatus for three-dimensional NAND non-volatile memory devices with side source line and mechanical support

Номер патента: US09780112B2. Автор: Jin Liu,Johann Alsmeier,Chun GE. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-03.

Multi-deck three-dimensional memory devices and methods for forming the same

Номер патента: EP3867954A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Multi-stack three-dimensional memory devices and methods for forming the same

Номер патента: EP3867952A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Three-dimensional memory devices having transferred interconnect layer and methods for forming same

Номер патента: EP3867953A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-25.

Three-dimensional memory devices having transferred interconnect layer and methods for forming same

Номер патента: WO2020124879A1. Автор: Lihong Xiao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-06-25.

Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

Номер патента: US20230328984A1. Автор: Takashi Kudo,Satoshi Shimizu,Nobuyuki Fujimura,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240224526A1. Автор: Zhiliang Xia,Zhong Zhang,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-04.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240107762A1. Автор: Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-28.

Three-dimensional memory devices and methods for forming the same

Номер патента: WO2024060219A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-03-28.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240107761A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-28.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240063140A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-22.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4367666A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-15.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240107760A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-28.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240064978A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Bingjie Yan,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-22.

Three-dimensional memory devices and methods for forming the same

Номер патента: WO2024060218A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-03-28.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4367990A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Wei Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-15.

Three-dimensional memory devices

Номер патента: WO2024103569A1. Автор: LIANG XIAO,Yi Zhao,Shu Wu,Wenbin Zhou,Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-23.

Three-dimensional memory devices and system having the same

Номер патента: US20240170389A1. Автор: Zhu Yang,ZHEN Guo,BIN Yuan,Zongke Xu,Zongliang Huo,Qiangwei Zhang,Beibei Li,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Method of forming three-dimensional memory device

Номер патента: US20230088149A1. Автор: Chia-Jung Chiu,Kuan-Yuan SHEN. Владелец: Macronix International Co Ltd. Дата публикации: 2023-03-23.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240074181A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Shuangshuang WU,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-29.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: WO2024086177A1. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials, Inc.. Дата публикации: 2024-04-25.

Three-dimensional memory, fabricating method thereof and memory system

Номер патента: US20240164097A1. Автор: LEI Jin,Jianquan Jia,Kaiwei LI,Weiming Chen,Weiwei CHU,Wenhao Xiong,Junbao WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215241A1. Автор: QIAN LI,LIANG XIAO,Shu Wu,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory device and method for fabricating the same

Номер патента: US20230309306A1. Автор: Yu-Cheng Tung,Shi-Wei He,Yun-Fan CHOU,Guoguo Kong,Meng Qi ZHUANG. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2023-09-28.

Three-dimensional memory devices containing memory stack structures with position-independent threshold voltage

Номер патента: US09356043B1. Автор: Kiyohiko Sakakibara,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-05-31.

Three-dimensional memory device and method of forming the same

Номер патента: US20180269215A1. Автор: Chun-Min Cheng,Jung-Yi Guo,Chun-Ling Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2018-09-20.

Three-dimensional memory and method for manufacturing the same

Номер патента: US20220165745A1. Автор: Bo Xu,BIN Yuan,Zongke Xu,Qiangwei Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-05-26.

Three-dimensional memory, the manufacturing method for the same, and memory system

Номер патента: US20230200076A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-22.

Three-dimensional memory and fabrication method thereof

Номер патента: US20230138251A1. Автор: Kun Zhang,Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

Three-dimensional memory device containing composite dielectric isolation structure in a staircase region and methods of forming the same

Номер патента: WO2024205705A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Akihiro Tobioka,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240244844A1. Автор: Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240237350A1. Автор: Bing Zhou,Senaka Kanakamedala,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Source structure of three-dimensional memory device and method for forming the same

Номер патента: EP4258843A3. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-07.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: US20240196610A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

Номер патента: US20240179907A1. Автор: Masato Miyamoto,Hirofumi TOKITA,Akihisa SAI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11839079B2. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-05.

Source structure of three-dimensional memory device and method for forming the same

Номер патента: EP4258843A2. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-11.

Three-dimensional memory device and method for forming the same

Номер патента: EP4205175A1. Автор: LIANG Chen,WEI Liu,Shiqi HUANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-07-05.

Three-dimensional memory device with dielectric fins in staircase region and methods of making thereof

Номер патента: WO2024123475A1. Автор: Kenji Sugiura,Yudai Tanaka,Kota Funayama,Ryoichi EHARA,Katsufumi Okamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240224517A1. Автор: Yang Chen,Zhiliang Xia,Di Wang,Qingfu Zhang,Zongliang Huo,Jingtao XIE. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-04.

Three-dimensional memory and manufacturing method thereof

Номер патента: US20230140992A1. Автор: Wei Xu,Ming Zeng,Qingqing WANG,Jianlu Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof

Номер патента: US09711524B2. Автор: Hiroyuki Ogawa,Go SHOJI. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-07-18.

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

Номер патента: US20210066336A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Qingqing WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-04.

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

Номер патента: US11758723B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Qingqing WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: US20240237337A9. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials Inc. Дата публикации: 2024-07-11.

Three-dimensional memory device and method for forming the same

Номер патента: US20230413570A1. Автор: WEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240098994A1. Автор: Lei Li,Zhiliang Xia,Kun Zhang,Linchun Wu,Zongliang Huo,Shuangshuang WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-21.

Three-dimensional memory device wordlines with reduced blocking layer damage

Номер патента: US20240138147A1. Автор: Mahendra Pakala,Jaesoo AHN,Jose Alexandro Romero,Kunal Bhatnagar. Владелец: Applied Materials Inc. Дата публикации: 2024-04-25.

Three-dimensional memory device having integrated support and contact structures and method of making thereof

Номер патента: US09853038B1. Автор: Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-26.

Three-dimensional memory device with hybrid support structures and methods of making the same

Номер патента: US20240237345A1. Автор: ZHIWEI CHEN,Kazuyuki Iwata,Yusuke Ikawa,Kei Samura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device with discrete charge storage elements and methods for forming the same

Номер патента: US12029037B2. Автор: Yuki KASAI,Yusuke Mukae,Masanori Tsutsumi,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-02.

Three-dimensional memory and fabricating method thereof

Номер патента: US20230144830A1. Автор: YING Zhou,Ming Li,Zhenzhen Zhang,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-11.

Three-dimensional memory device and method for forming the same

Номер патента: US20240206166A1. Автор: Shiwei HE,Hsien-Shih Chu,Yongjian Yu,Guoguo Kong,Canfa Dai,Detianyu Diao. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory array formation techniques

Номер патента: US20240188299A1. Автор: Wenjie Li,George Matamis,Christopher J. Larsen,S M Istiaque Hossain,Lingyu Kong,David A. Daycock,Sok Han Wong,Kevin R. Gast,Lhaang Chee Ooi. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260267A1. Автор: Takashi Kudo,Ryota Suzuki,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: WO2024158467A1. Автор: Hiroyuki Tanaka,Takashi Kudo,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Nobuyuki Fujimura,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-02.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260266A1. Автор: Hiroyuki Tanaka,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US12089405B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

Номер патента: US20230292511A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-14.

Three-dimensional memory device and fabrication method thereof

Номер патента: EP3966867A1. Автор: Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-16.

Method for fabricating three-dimensional memory device by thickening an epitaxial layer

Номер патента: US11716853B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-01.

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Номер патента: US20240292628A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-29.

Three-dimensional memory device with backside support pillar structures and methods of forming the same

Номер патента: US20240315040A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-19.

Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same

Номер патента: US20210143166A1. Автор: Yanli Zhang,Zhen Chen. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-05-13.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: WO2024118160A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

Номер патента: US20220254733A1. Автор: Yanli Zhang,Satoshi Shimizu,Yusuke Yoshida,Johann Alsmeier,Tatsuya Hinoue,Seiji Shimabukuro,Genta Mizuno,Keisuke Izumi,Ryousuke ITOU,Yujin TERASAWA,Kenzo IIZUKA. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectric

Номер патента: US20240098992A1. Автор: Tomohiro Uno,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-21.

Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same

Номер патента: US11871580B2. Автор: Xiang Yang,Yanli Zhang,Peng Zhang,Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-09.

Three-dimensional memory device and method for forming the same

Номер патента: US20230187351A1. Автор: Gang Wu,Shi-Wei He,Yun-Fan CHOU,Guoguo Kong,Dongxiang Zhu,Canfa Dai,Jianxiong Lai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2023-06-15.

Semiconductor device, three-dimensional memory and fabrication method of semiconductor device

Номер патента: US20230134659A1. Автор: LIANG Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-05-04.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240334690A1. Автор: Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-03.

Three-dimensional memory devices

Номер патента: US20210375913A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-02.

Fabrication method of three-dimensional memory device

Номер патента: US20230064048A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-02.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: EP3686930A1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-29.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: US09922987B1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-03-20.

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Номер патента: EP3602628A1. Автор: Shigehiro Fujino,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-02-05.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: WO2024123438A1. Автор: Hiroyuki Ogawa,Takaaki IWAI,Masahiro Yaegashi,Akihiro Tobioka,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory and manufacturing method therefor, and storage system

Номер патента: EP4440277A1. Автор: Xiaoxin LIU,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Offset backside contact via structures for a three-dimensional memory device

Номер патента: EP3420590A1. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-02.

Three-dimensional memory device including trench bridges and methods of forming the same

Номер патента: WO2024035487A1. Автор: Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-15.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

Номер патента: US20240172439A1. Автор: Wei Xu,QI Hao,BIN Yuan,Zongke Xu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device containing insulated gate located over a top source layer for applying gidl erase voltage and method for manufacturing the same

Номер патента: US20240292616A1. Автор: Satoshi Shimizu,Takaaki IWAI,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-29.

Three-dimensional memory device with self-aligned etch stop rings for a source contact layer and method of making the same

Номер патента: WO2023146568A1. Автор: Satoshi Shimizu,Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-03.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206167A1. Автор: SHENG Peng,Jing Gao,Kai Yu,Wenbo Zhang,Lei Xue,Zhaohui Cheng,Zhiyong Lu,Zhangyi LI. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device with separated contact regions and methods for forming the same

Номер патента: WO2023018456A3. Автор: Hiroyuki Ogawa,James Kai,Zhixin Cui,Fumiaki TOYAMA,Yuki Mizutani,Masaaki Higashitani,Hardwell Chibvongodze,Hisakazu Otoi,Rajdeep Gautam. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-06-08.

Methods for forming three-dimensional memory devices

Номер патента: US11877448B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Methods for forming three-dimensional memory devices

Номер патента: WO2021237881A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2021-12-02.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240172429A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device and fabrication method

Номер патента: US20240206162A1. Автор: Sheng Xia,Yuping Xia,Xiaofen Zheng,Jiandong Wang,Wenbin Sun,Junyang Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device and fabrication method

Номер патента: US20240206163A1. Автор: Yuping Xia,Xiaofen Zheng,Jiandong Wang,Wenbin Sun,Yonggang YANG,Siliu Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device containing etch stop structures for word line contacts and methods of employing the same

Номер патента: US20240251560A1. Автор: Hirofumi TOKITA,Toshiyuki Isome. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

Номер патента: US20240237343A9. Автор: Bing Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Monica TITUS. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same

Номер патента: US20240040786A1. Автор: Yusuke Yoshida,Shigeyuki Yoshida,Teruo OKINA,Takanori Hanada. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-01.

Three-dimensional memory and method for manufacturing the same

Номер патента: US20160141300A1. Автор: Yi-Hsuan Hsiao,Wei-Chen Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2016-05-19.

Three-dimensional memory and method for manufacturing the same

Номер патента: US09536893B2. Автор: Yi-Hsuan Hsiao,Wei-Chen Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2017-01-03.

Three-dimensional memory devices

Номер патента: US12114498B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-08.

Three dimensional memory device and method for fabricating the same

Номер патента: US20190067315A1. Автор: Yu-Wei Jiang,Jia-Rong Chiou. Владелец: Macronix International Co Ltd. Дата публикации: 2019-02-28.

Capacitor in a three-dimensional memory structure

Номер патента: US12068240B2. Автор: June Lee,Naveen KAUSHIK,Shuai Xu,Xiaojiang Guo. Владелец: Micron Technology Inc. Дата публикации: 2024-08-20.

Capacitor in a three-dimensional memory structure

Номер патента: US20240371749A1. Автор: June Lee,Naveen KAUSHIK,Shuai Xu,Xiaojiang Guo. Владелец: Micron Technology Inc. Дата публикации: 2024-11-07.

A three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: EP3286785A1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,George Matamis,Jixin Yu,Wenguang Shi,Junichi Ariyoshi,Xiaolong Hu,Jiyin Xu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-28.

Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: US09449987B1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,Jixin Yu,Wenguang Stephen Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-20.

Three-dimensional memory devices having dummy channel structures and methods for forming the same

Номер патента: US11985824B2. Автор: Jianzhong Wu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-14.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US11925019B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-05.

Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US11877449B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-16.

Staircase structures for three-dimensional memory device double-sided routing

Номер патента: US20200006377A1. Автор: Shao-Fu Sanford Chu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-01-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20230411285A1. Автор: Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Access circuitry structures for three-dimensional memory array

Номер патента: US20240088044A1. Автор: Taehyun Kim,Collin Howder. Владелец: Micron Technology Inc. Дата публикации: 2024-03-14.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20210225865A1. Автор: Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-07-22.

Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

Номер патента: US20240074170A1. Автор: Takashi Yuda,Ippei Yasuda,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-29.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240251564A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357828A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12063787B2. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Through array contact structure of three-dimensional memory device

Номер патента: US20230389323A1. Автор: Zhenyu Lu,GuanPing WU,Wenguang Shi,Xianjin Wan,Baoyou Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-30.

Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

Номер патента: US11812610B2. Автор: Rita J. Klein,John D. Hopkins,Jordan D. GREENLEE. Владелец: Micron Technology Inc. Дата публикации: 2023-11-07.

Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods

Номер патента: US20240107768A1. Автор: Rita J. Klein,John D. Hopkins,Jordan D. GREENLEE. Владелец: Micron Technology Way. Дата публикации: 2024-03-28.

Through array contact structure of three-dimensional memory device

Номер патента: US11785776B2. Автор: Zhenyu Lu,GuanPing WU,Wenguang Shi,Xianjin Wan,Baoyou Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-10.

Through array contact structure of three-dimensional memory device

Номер патента: EP4383982A2. Автор: Zhenyu Lu,GuanPing WU,Wenguang Shi,Xianjin Wan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-12.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11950428B2. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: US20240312521A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2024-09-19.

Trench and multiple pier architecture for three-dimensional memory arrays

Номер патента: WO2024191628A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-09-19.

Three-dimensional memory device with through-stack contact via structures and method of making the same

Номер патента: US20240215243A1. Автор: Tomohiro Kubo,Masato Miyamoto,Koichi Matsuno,Masanori Tsutsumi,Takumi Moriyama,Michio Oryoji,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: US20240276725A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Three-dimensional memory device and method for forming the same

Номер патента: US12075621B2. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-27.

Three-dimensional memory device with reduced etch damage to memory films and methods of making the same

Номер патента: US20200006373A1. Автор: Tomohiro Kubo,Koji Miyata,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-01-02.

Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same

Номер патента: US20240237344A1. Автор: Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan,Sarath Puthenthermadam,Longju LIU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

Номер патента: US09768192B1. Автор: Tadashi Nakamura. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-19.

Three-dimensional memory device and method for forming the same

Номер патента: WO2022246789A1. Автор: LEI Liu,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-12-01.

Three-dimensional memory device with angled word lines and method of making thereof

Номер патента: US09905573B1. Автор: Akira Takahashi,Shogo Mada,Motoki Umeyama. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-27.

Three-dimensional memory with super-pillar

Номер патента: US20230276621A1. Автор: NAN Wu,Chih Ting LIN,Xiangqin Zou,Ngoc Quynh Hoa LE. Владелец: Intel NDTM US LLC. Дата публикации: 2023-08-31.

Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same

Номер патента: US09570463B1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Yao-Sheng Lee,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-02-14.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: WO2023048778A1. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-03-30.

Three dimensional memory device containing dummy word lines and p-n junction at joint region and method of making the same

Номер патента: US12035520B2. Автор: Yanli Zhang,Peng Zhang. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-09.

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

Номер патента: WO2023163740A1. Автор: Kazuto Watanabe,Koichi Matsuno,Kota Funayama,Youko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device and method for forming the same

Номер патента: US20230282281A1. Автор: Junbao WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230337436A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230343705A1. Автор: Hyun Soo Shin. Владелец: SK hynix Inc. Дата публикации: 2023-10-26.

Methods for forming three-dimensional memory devices, and related structures

Номер патента: US20120199987A1. Автор: Nishant Sinha,Krishna K. Parat. Владелец: Micron Technology Inc. Дата публикации: 2012-08-09.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: US20240178140A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same

Номер патента: WO2023224796A1. Автор: Koichi Ito,Takuya Mori,Michiaki Sano. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-23.

Three-dimensional memory device containing source rails and method of making the same

Номер патента: US20230328976A1. Автор: Tomohiro Kubo,Takaaki IWAI,Kento Iseri. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-12.

Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same

Номер патента: US20230380151A1. Автор: Koichi Ito,Michiaki Sano,Takyua MORI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-23.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375910A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three dimensional memory array with select device

Номер патента: US09728584B2. Автор: Gurtej S. Sandhu,Scott E. Sills,D. V. Nirmal Ramaswamy. Владелец: Micron Technology Inc. Дата публикации: 2017-08-08.

Three-dimensional memory device including stairless word line contact structures and method of making the same

Номер патента: US11973026B2. Автор: Koichi Ito,Michiaki Sano. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-30.

Passive devices for integration with three-dimensional memory devices

Номер патента: EP3262680A2. Автор: Masahide Matsumoto,Masatoshi Nishikawa,Toru Miwa,Ryoichi Honma,Johann Alsmeier,Yuki Mizutani,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11723209B2. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Chun-Fu CHENG,Meng-Han LIN,Yu-Chien Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-08.

Three-dimensional memory device with word-line etch stop liners and method of making thereof

Номер патента: WO2023086126A1. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-05-19.

Three-dimensional memory device with staircase etch stop structures and methods for forming the same

Номер патента: US11997850B2. Автор: Kenichi Shimomura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-28.

Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

Номер патента: US20240213147A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

Номер патента: WO2024144916A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-04.

Three-dimensional memory device

Номер патента: US20230238322A1. Автор: Jin HO KIM,Sang Hyun Sung,Sung Lae OH,Chang Man SON,Chang Woo Kang. Владелец: SK hynix Inc. Дата публикации: 2023-07-27.

Three-dimensional memory and method for forming same

Номер патента: US20230345710A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-26.

Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

Номер патента: US20210050359A1. Автор: James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Three-dimensional memory, chip packaging structure, and electronic device

Номер патента: EP4333062A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-03-06.

Memory cell capacitor structures for three-dimensional memory arrays

Номер патента: US20230397401A1. Автор: Yuan He,Sheyang NING,Song Guo. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Trench structures for three-dimensional memory devices

Номер патента: US20230284445A1. Автор: Zhiliang Xia,Ping Yan,Qiang Xu,Zongliang Huo,Guangji Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230363138A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230361030A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Dense piers for three-dimensional memory arrays

Номер патента: US20230309326A1. Автор: David H. Wells,Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230361031A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Three-dimensional memory device

Номер патента: US20240147720A1. Автор: Chang Woo Kang. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

Trench and pier architectures for three-dimensional memory arrays

Номер патента: US20230329010A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Russell L. Meyer,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-10-12.

Three-dimensional memory device with isolated source strips and method of making the same

Номер патента: US12058854B2. Автор: Akio Nishida,Takaaki IWAI,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-06.

3D NAND memory device and method of forming the same

Номер патента: US11737263B2. Автор: Fushan Zhang,Enbo Wang,Yushi Hu,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-22.

Three-dimensional memory device with isolated source strips and method of making the same

Номер патента: WO2022220897A1. Автор: Akio Nishida,Takaaki IWAI,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-10-20.

Three-dimensional memory device having parallel trench type capacitor and a method of manufacturing the three-dimensional memory device

Номер патента: US20220149052A1. Автор: Won Seok Kim. Владелец: SK hynix Inc. Дата публикации: 2022-05-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215273A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4282004A1. Автор: Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-29.

Three-dimensional memory device having parallel trench type capacitor

Номер патента: US11690233B2. Автор: Won Seok Kim. Владелец: SK hynix Inc. Дата публикации: 2023-06-27.

Three-dimensional memory devices

Номер патента: US20240164100A1. Автор: LIANG XIAO,Yi Zhao,Shu Wu,Wenbin Zhou,Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023246209A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Dongxue Zhao,Dongyu FAN. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023246210A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-12-28.

Through-stack contact via structures for a three-dimensional memory device and methods of forming the same

Номер патента: US20210366924A1. Автор: Hirofumi TOKITA,Takayuki MAEKURA,Romain MENTEK. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-25.

Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the same

Номер патента: WO2020040835A1. Автор: Kiyohiko Sakakibara,Masatoshi Nishikawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-02-27.

Three-dimensional memory device including stairless word line contact structures for and method of making the same

Номер патента: US20220005824A1. Автор: Koichi Ito,Yoshinobu Tanaka,Hideaki Hasegawa,Sung Tae Lee,Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-01-06.

Three-dimensional memory device containing memory opening monitoring area and methods of making the same

Номер патента: US20240107758A1. Автор: Hiroyuki Ogawa,Masato Miyamoto,Keisuke Shigemura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Three-dimensional memory device containing memory opening monitoring area and methods of making the same

Номер патента: WO2024072502A1. Автор: Hiroyuki Ogawa,Masato Miyamoto,Keisuke Shigemura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-04.

Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening

Номер патента: US20240237346A1. Автор: Bing Zhou,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Adarsh RAJASHEKHAR,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device and method for forming the same

Номер патента: US20210066333A1. Автор: Zhiliang Xia,Fandong LIU,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-04.

Three dimensional memory array architecture

Номер патента: EP2891182A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2015-07-08.

Three dimensional memory array architecture

Номер патента: US09595667B2. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2017-03-14.

Three-dimensional memory device with word line side-contact via structures and methods for forming the same

Номер патента: WO2024123476A1. Автор: Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

Номер патента: US20220045088A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof

Номер патента: US20240008281A1. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-04.

Method of making a three-dimensional memory array with etch stop

Номер патента: US09437606B2. Автор: Masanori Terahara,Raghuveer S. Makala,Johann Alsmeier,Hirofumi Watatani,Jayavel Pachamuthu,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-06.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US20240090227A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-14.

Three-dimensional memory device and method for forming the same

Номер патента: US20200273872A1. Автор: Zhiliang Xia,Fandong LIU,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-27.

Three-dimensional memory device having staircase structure and method for forming the same

Номер патента: US20230413542A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou,Zongliang Huo,Ling Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Three-dimensional memory device having epitaxially-grown semiconductor channel and method for forming the same

Номер патента: US11805647B2. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: WO2022133990A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-06-30.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US11871573B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-09.

Three dimensional memory arrays and stitching thereof

Номер патента: US09627438B1. Автор: Bing K. Yen,Kimihiro Satoh. Владелец: Avalanche Technology Inc. Дата публикации: 2017-04-18.

Three-dimensional memory device with word line side-contact via structures and methods for forming the same

Номер патента: US20240186237A1. Автор: Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Socket structure for three-dimensional memory

Номер патента: US20170077399A1. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2017-03-16.

Socket structure for three-dimensional memory

Номер патента: US9728722B2. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2017-08-08.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US12058864B2. Автор: Wei Xu,Wenbin Zhou,Qingqing WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Socket structure for three-dimensional memory

Номер патента: US09515125B2. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2016-12-06.

Socket structure for three-dimensional memory

Номер патента: US20160315121A1. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2016-10-27.

Socket structure for three-dimensional memory

Номер патента: WO2016170759A1. Автор: Jun Sumino. Владелец: SONY SEMICONDUCTOR SOLUTIONS CORPORATION. Дата публикации: 2016-10-27.

Socket structure for three-dimensional memory

Номер патента: US20170288141A1. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2017-10-05.

Socket structure for three-dimensional memory

Номер патента: US09728722B2. Автор: Jun Sumino. Владелец: Sony Corp. Дата публикации: 2017-08-08.

Three-dimensional memory device and method of manufacturing thereof

Номер патента: WO2023168696A1. Автор: Jun Liu,Heng Zhang,Weifeng LEI. Владелец: Yangtze Advanced Memory Industrial Innovation Center Co., Ltd. Дата публикации: 2023-09-14.

Method for forming channel hole plug of three-dimensional memory device

Номер патента: US11943928B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Meng Wang,Yushi Hu,Li Hong XIAO,LongDong LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-26.

Stairless three-dimensional memory device and method of making the same by forming replacement word lines

Номер патента: US20240179909A1. Автор: Akihiro Tobioka,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory devices having channel cap structures and methods for forming the same

Номер патента: US20240349501A1. Автор: Bing Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-17.

Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the same

Номер патента: WO2020068184A1. Автор: Masatoshi Nishikawa,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-02.

Memory cell protective layers in a three-dimensional memory array

Номер патента: WO2024123561A2. Автор: Farrell M. Good. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-06-13.

Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process

Номер патента: US20240260275A1. Автор: Usha Raghuram,Jie Zhou,Kavita Shah,Eli Harari,Shohei KAMISAKA,Yosuke Nosho,Iting Lin. Владелец: Sunrise Memory Corp. Дата публикации: 2024-08-01.

Three dimensional memory device

Номер патента: US12137570B2. Автор: Yih Wang,Yu-Ming Lin,Chia-Ta Yu,Sai-Hooi Yeong,Yi-Ching Liu,Chia-En HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US12069871B2. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240357838A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Memory cell protective layers in a three-dimensional memory array

Номер патента: US20240188308A1. Автор: Farrell M. Good. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: US20240357794A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: Micron Technology Inc. Дата публикации: 2024-10-24.

Two transistor cells for vertical three-dimensional memory having verical digit lines

Номер патента: WO2024226340A1. Автор: Haitao Liu,Kamal M. Karda,Si-Woo Lee,Litao YANG. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-10-31.

Integrated Neuro-Processor Comprising Three-Dimensional Memory Array

Номер патента: US20170270403A1. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2017-09-21.

Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement

Номер патента: US12101936B2. Автор: Akio Nishida,Yusuke Mukae,Masanori Tsutsumi,Ramy Nashed Bassely SAID,Tatsuya Hinoue,Ryousuke ITOU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-24.

Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the same

Номер патента: US20190273088A1. Автор: Yoshiyuki Okura,Zhixin Cui,Hiroshi Minakata,Keigo KITAZAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-09-05.

Three-dimensional memory device including bottle-shaped memory stack structures and methods of making the same

Номер патента: WO2020060594A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

Three-dimensional memory array including dual work function floating gates and method of making the same

Номер патента: US20220254798A1. Автор: Yanli Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same

Номер патента: US11968826B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US11903190B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-13.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US20220189981A1. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Номер патента: WO2020226702A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-11-12.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

Номер патента: WO2022186848A1. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-09.

Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof

Номер патента: US11968834B2. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-23.

Three-dimensional memory device with finned support pillar structures and method of forming the same

Номер патента: US20220352091A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-11-03.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20230402387A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11849587B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240074204A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Memory cell formation in three dimensional memory arrays using atomic layer deposition

Номер патента: US20230354721A1. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-11-02.

Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings

Номер патента: WO2024118177A1. Автор: Hiroyuki Ogawa,Koichi Matsuno,Takaaki IWAI,Naohiro Hosoda,Takayuki MAEKURA,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device containing self-aligned ferroelectric memory elements and method of making the same

Номер патента: US20240130137A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

Three-dimensional memory array and method for manufacturing same

Номер патента: EP4432802A1. Автор: Young Wook Park,Jin Ho Ahn. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-09-18.

Three-dimensional memory device and fabrication method thereof

Номер патента: EP3912188A1. Автор: Linchum WU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-24.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12148714B2. Автор: Di Wang,Wenxi Zhou,Wei Xie,Tingting Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-19.

Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

Номер патента: US12052865B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Three-dimensional memory devices having a single layer channel and methods of making thereof

Номер патента: US9530785B1. Автор: Wei Zhao,Zhenyu Lu,Hiroyuki Ogawa,Raghuveer S. Makala,Rahul Sharangpani,Yingda Dong,Henry Chien,George Matamis,Sateesh KOKA,Somesh Peri,Ching-Huang Lu,Yuichi Ikezono. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-27.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20220077283A1. Автор: Yang Zhou,Meng Xiao,ZHEN Guo,HUI Zhang,Jingjing Geng,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US11990506B2. Автор: Yang Zhou,Meng Xiao,ZHEN Guo,HUI Zhang,Jingjing Geng,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-21.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240206179A1. Автор: LIANG XIAO,Yihuan WANG,Mingkang ZHANG,Yingcheng Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Three-dimensional memory device with ferroelectric material

Номер патента: US20210375929A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Three-dimensional memory device including discrete charge storage elements and methods of making thereof

Номер патента: US20230345727A1. Автор: Satoshi Shimizu,Senaka Kanakamedala,Takumi Moriyama,Nobuyuki Fujimura. Владелец: Western Digital Technologies Inc. Дата публикации: 2023-10-26.

Inter-deck plug in three-dimensional memory device and method for forming the same

Номер патента: US20200111807A1. Автор: Yong Zhang,Enbo Wang,Jialan He,Haohao YANG,Qianbin Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-04-09.

Inter-deck plug in three-dimensional memory device and method for forming same

Номер патента: EP3815133A1. Автор: Yong Zhang,Enbo Wang,Jialan He,Haohao YANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-05.

Methods for forming structurally- reinforced semiconductor plug in three-dimensional memory device

Номер патента: US20200058674A1. Автор: Yangbo Jiang,Liang Hui Wu,Ya Jun Wang,Jingping Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-02-20.

Manufacturing method of three-dimensional memory device with improved RC delay

Номер патента: US12016180B2. Автор: Qiguang Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-18.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210104547A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Three-dimensional memory device having bent backside word lines

Номер патента: EP3891812A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-10-13.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20200312870A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-01.

Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer

Номер патента: EP3821465A1. Автор: GuanPing WU,Weihua Cheng,Hongbin Zhu,Baoyou Chen,Hai Hui Huang,Zhuqing Huang,Yu Qi Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-19.

Joint opening structures of three-dimensional memory devices and methods for forming the same

Номер патента: US11956953B2. Автор: Zhenyu Lu,Feng Pan,GuanPing WU,Wenguang Shi,Xianjin Wan,Baoyou Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-09.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US12035523B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer

Номер патента: US20200119042A1. Автор: GuanPing WU,Weihua Cheng,Hongbin Zhu,Baoyou Chen,Hai Hui Huang,Zhuqing Huang,Yu Qi Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-04-16.

Bonded three-dimensional memory device having temporary electrical grounding paths in dummy block and methods of making the same

Номер патента: US20240243061A1. Автор: Masanori Tsutsumi,Takumi Moriyama,Junji Oh. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof

Номер патента: US09812505B2. Автор: Yukihiro Sakotsubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-07.

Three-dimensional memory device with backside word line contact via structures and methods of forming the same

Номер патента: US20240321742A1. Автор: Li Li,Takashi Inomata. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-26.

Three-dimensional memory device with backside word line contact via structures and methods of forming the same

Номер патента: US20240321740A1. Автор: Li Li,Takashi Inomata,Masanori OISUGI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-26.

Three-dimensional memory device containing a capped isolation trench fill structure and methods of making the same

Номер патента: US12009306B2. Автор: Yoshitaka Otsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-11.

Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the same

Номер патента: WO2020256786A1. Автор: Masanori Terahara,Eiji Hayashi,Hirofumi TOKITA,Yoshitaka Otsu,Naoto HOJO,Kei NOZAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-12-24.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US12131794B2. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-10-29.

Three-dimensional memory device including hammerhead-shaped word lines and methods of manufacturing the same

Номер патента: US12094943B2. Автор: Yuki KASAI,Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-17.

Three-dimensional flat nand memory device having high mobility channels and methods of making the same

Номер патента: US20200279868A1. Автор: Fei Zhou,Raghuveer S. Makala,Senaka Krishna Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-03.

Three-dimensional memory device with charge-trapping-free gate dielectric for top select gate electrode and method of making thereof

Номер патента: US09679907B1. Автор: Ryosuke Kaneko. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-06-13.

Three-dimensional memory device with a graphene channel and methods of making the same

Номер патента: US20200203362A1. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-25.

Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same

Номер патента: US09831266B2. Автор: Jin Liu,Yanli Zhang,James Kai,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-28.

Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same

Номер патента: US20210305384A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375909A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

Номер патента: US20210305266A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: US20240237354A1. Автор: Koichi Matsuno,Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional memory device with self-aligned word line contact via structures and method of making the same

Номер патента: US20240179916A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory device with dielectric isolated via structures and methods of making the same

Номер патента: US12068249B2. Автор: Yoshitaka Otsu,Yoshiyuki KUROKO. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-20.

Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

Номер патента: US09780034B1. Автор: Zhenyu Lu,Tadashi Nakamura,Tong Zhang,Masanori Tsutsumi,Kota Funayama,Ryoichi EHARA,Youko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-03.

Three-dimensional memory device containing a dummy memory film isolation structure and method of making thereof

Номер патента: US20210159241A1. Автор: Liang Li,CHAO Xu,Zhe Song. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-05-27.

Three-dimensional memory device containing peripheral circuit with fin and planar field effect transistors and method of making thereof

Номер патента: US20240371760A1. Автор: Mohan DUNGA,Satoru Mayuzumi,Sudarshan Narayanan. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-11-07.

Three-dimensional memory device with high contact via density and methods of forming the same

Номер патента: US20240005990A1. Автор: Tomohiro Kubo,Hirofumi TOKITA,Fumiaki TOYAMA,Shiqian SHAO. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-04.

Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof

Номер патента: US09754820B2. Автор: Rahul Sharangpani,Motoki KAWASAKI,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-05.

Three-dimensional memory device and method of making thereof using double pitch word line formation

Номер патента: US20220406794A1. Автор: Naoki Takeguchi,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-12-22.

Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same

Номер патента: WO2020185267A1. Автор: Johann Alsmeier,Tae-Kyung Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-17.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: US09972640B1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-15.

Three-dimensional memory device with partially discrete charge storage regions and method of making thereof

Номер патента: US09960180B1. Автор: Yanli Zhang,Peng Zhang,Fei Zhou,Rahul Sharangpani,Keerti Shukla,Raghuveer Makala. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-01.

Three-dimensional memory device with layer contact via structures located in a memory array region and methods of forming the same

Номер патента: US20240381639A1. Автор: Takaaki IWAI,Yuji TOTOKI,Keisuke Izumi. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-11-14.

Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof

Номер патента: US09972641B1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-15.

Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof

Номер патента: US09859337B2. Автор: Abhijit Bandyopadhyay,Christopher J. Petti,Perumal Ratnam. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Three-dimensional memory device with different thickness insulating layers and method of making thereof

Номер патента: US09716105B1. Автор: Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-07-25.

Three-dimensional nand device containing support pedestal structures for a buried source line and method of making the same

Номер патента: WO2017087048A1. Автор: Jin Liu,Yanli Zhang,James Kai,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-26.

Three-dimensional memory device containing hydrogen diffusion barrier structures for cmos under array architecture and method of making the same

Номер патента: US20190214344A1. Автор: Hiroyuki Ogawa,Daxin Mao,Johann Alsmeier,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-07-11.

Three dimensional memory device having well contact pillar and method of making thereof

Номер патента: US09768186B2. Автор: Hiroyuki Ogawa,Ryoichi Honma,Fumiaki TOYAMA,Yuki Mizutani,Seiji Shimabukuro. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-19.

Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same

Номер патента: WO2022108623A1. Автор: Shin Koyama,Eisuke Takii,Hiraku Hashimoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-05-27.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

Номер патента: US20240334698A1. Автор: Takaaki IWAI,Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

Номер патента: US20240334697A1. Автор: Takaaki IWAI,Teruo OKINA,Yuki FUKUSHIGE. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Method of making a three-dimensional memory device having a heterostructure quantum well channel

Номер патента: US09941295B2. Автор: Peter Rabkin,Johann Alsmeier,Masaaki Higashitani,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-10.

Method of making a three-dimensional memory array with etch stop

Номер патента: US09431409B2. Автор: Johann Alsmeier,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-08-30.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: WO2021242328A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

Номер патента: US20210375908A1. Автор: Raghuveer S. Makala,Peter Rabkin,Ashish Baraskar. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-02.

Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same

Номер патента: WO2020040838A1. Автор: Yan Li,Jian Chen,Johann Alsmeier,Tae-Kyung Kim,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-02-27.

Method of making self-assembling floating gate electrodes for a three-dimensional memory device

Номер патента: US09806089B2. Автор: Yanli Zhang,Raghuveer S. Makala,Rahul Sharangpani,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-31.

Three-dimensional memory device including different height memory stack structures and methods of making the same

Номер патента: US20200335518A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Ken Oowada. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-10-22.

Three dimensional memory device and method for fabricating the same

Номер патента: US20210242072A1. Автор: Erh-Kun Lai,Hsiang-Lan Lung. Владелец: Macronix International Co Ltd. Дата публикации: 2021-08-05.

Three-dimensional memory device employing thinned insulating layers and methods for forming the same

Номер патента: US20210335999A1. Автор: James Kai,Johann Alsmeier,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-10-28.

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Номер патента: US20190326306A1. Автор: Kiyohiko Sakakibara,Kenji Sugiura,Zhixin Cui,Mitsuteru Mushiga,Hisakazu Otoi. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-10-24.

Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

Номер патента: US20200258816A1. Автор: Akio Nishida,James Kai,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-13.

Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

Номер патента: US20220045092A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device including an inter-tier etch stop layer and method of making the same

Номер патента: WO2021194535A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device with separated source lines and method of making the same

Номер патента: US20240172431A1. Автор: Makoto Koto,James Kai,Koichi Matsuno,Johann Alsmeier,Masaaki Higashitani,Masanori Tsutsumi,Marika Gunji-Yoneoka,Hisakazu Otoi,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-23.

Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

Номер патента: US20220045090A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same

Номер патента: US20220045091A1. Автор: Yanli Zhang,Satoshi Shimizu,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-10.

Three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers and method of making the same

Номер патента: US20230275026A1. Автор: Koichi Matsuno,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device containing CMOS devices over memory stack structures

Номер патента: US09530790B1. Автор: Wei Zhao,Zhenyu Lu,Jian Chen,Peter Rabkin,Johann Alsmeier,Andrew Lin,Henry Chien,Wenguang Stephen Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-27.

Three dimensional memory array architecture

Номер патента: US09444046B2. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2016-09-13.

Three-dimensional memory device including aluminum alloy word lines and method of making the same

Номер патента: WO2023018452A1. Автор: Raghuveer S. Makala,Fumitaka Amano,Linghan CHEN. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-02-16.

Three-dimensional memory device with separated source-side lines and method of making the same

Номер патента: US11889684B2. Автор: Hiroyuki Ogawa,Akio Nishida,Masanori Tsutsumi,Shinsuke YADA,Mitsuteru Mushiga,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-30.

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

Номер патента: EP3619744A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-11.

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

Номер патента: WO2019027541A1. Автор: Satoshi Shimizu,Kiyohiko Sakakibara,Naoto NORIZUKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-02-07.

Three-dimensional memory device including aluminum alloy word lines and method of making the same

Номер патента: US20230051815A1. Автор: Raghuveer S. Makala,Fumitaka Amano,Linghan CHEN. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-02-16.

Three-dimensional memory device including aluminum alloy word lines and method of making the same

Номер патента: US11990413B2. Автор: Raghuveer S. Makala,Fumitaka Amano,Linghan CHEN. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-21.

Three-dimensional memory device with dielectric isolated via structures and methods of making the same

Номер патента: US20210210503A1. Автор: James Kai,Koichi Matsuno,Johann Alsmeier,Yoshitaka Otsu,Jixin Yu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-07-08.

Three-dimensional memory device containing metal-organic framework inter-word line insulating layers and methods of forming the same

Номер патента: US20210193674A1. Автор: Fei Zhou,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-06-24.

Three-dimensional memory device with plural channels per memory opening and methods of making the same

Номер патента: US20220189986A1. Автор: Takeki Ninomiya. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-06-16.

Three-dimensional memory device having a transition metal dichalcogenide channel

Номер патента: US09721963B1. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-01.

Selective floating gate semiconductor material deposition in a three-dimensional memory structure

Номер патента: EP3227920A1. Автор: Hiroyuki Kamiya,Kensuke Yamaguchi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-11.

Selective floating gate semiconductor material deposition in a three-dimensional memory structure

Номер патента: US09553100B2. Автор: Hiroyuki Kamiya,Kensuke Yamaguchi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-01-24.

Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same

Номер патента: US20230023523A1. Автор: Yusuke Yoshida,Kei NOZAWA,Hiromi MINAMITANI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-01-26.

Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

Номер патента: US11791327B2. Автор: Akio Nishida,Fumiaki TOYAMA,Masaaki Higashitani,Kwang-Ho Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-17.

Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same

Номер патента: US20200251479A1. Автор: Kiyohiko Sakakibara,Zhixin Cui,Masaaki Higashitani,Masanori Tsutsumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three dimensional memory device having isolated periphery contacts through an active layer exhume process

Номер патента: WO2017048367A1. Автор: Jian Zhou,Sri Sai Sivakumar Vegunta,Gowrisankar Damarla. Владелец: Intel Corporation. Дата публикации: 2017-03-23.

Multiple gate-induced drain leakage current generator

Номер патента: SG11201906878SA. Автор: Shuji Tanaka,Masanobu Saito,Shinji Sato. Владелец: Micron Technology Inc. Дата публикации: 2019-08-27.

Method of manufacturing three-dimensional memory device with vias connected to staircase structure

Номер патента: US12058855B2. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-08-06.

Non-volatile three-dimensional memory cell, storage method, and chip assembly

Номер патента: US20240320180A1. Автор: Jun Zhou,Bin Hou,Fengguo ZUO. Владелец: Xian Unilc Semiconductors Co Ltd. Дата публикации: 2024-09-26.

Method of reducing control gate electrode curvature in three-dimensional memory devices

Номер патента: US09589839B1. Автор: Hiroyuki Ogawa,Kiyohiko Sakakibara,Akira MATSUDAIRA,Yusuke Ikawa,Eisuke Takii,Seiji Shimabukuro,Kengo Kajiwara. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-03-07.

Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit lines

Номер патента: WO2023287474A1. Автор: Yu-Chung Lien,Keyur Payak,Huai-Yuan Tseng,Shinsuke YADA,Jiahui Yuan,Abhijith Prakash,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-01-19.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US20210091093A1. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

Inter-plane offset in backside contact via structures for a three-dimensional memory device

Номер патента: US09917093B2. Автор: Fumitoshi Ito,Tuan Pham,Masaaki Higashitani,Jayavel Pachamuthu,Cheng-Chung Chu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-03-13.

Passive devices for integration with three-dimensional memory devices

Номер патента: US09646981B2. Автор: Masahide Matsumoto,Masatoshi Nishikawa,Toru Miwa,Ryoichi Honma,Yuki Mizutani,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-09.

Passive devices for integration with three-dimensional memory devices

Номер патента: US09589981B2. Автор: Masatoshi Nishikawa,Toru Miwa,Ryoichi Honma,Johann Alsmeier,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-03-07.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: US20180138189A1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-17.

Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same

Номер патента: WO2021158252A1. Автор: Koichi Ito,Yoshinobu Tanaka,Hirofumi TOKITA. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-08-12.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: EP3494596A1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-06-12.

Three-dimensional memory device containing channels with laterally pegged dielectric cores and methods for making the same

Номер патента: US20200251485A1. Автор: Takashi Yuda,Yuji Fukano,Manabu Kakazu. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-08-06.

Three-dimensional memory devices with deep isolation structures

Номер патента: US20210013088A1. Автор: LIANG Chen,WEI Liu,Cheng GAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-01-14.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230282576A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Three-dimensional memory device having a heterostructure quantum well channel

Номер патента: US09425299B1. Автор: Peter Rabkin,Johann Alsmeier,Masaaki Higashitani,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-08-23.

Three-dimensional memory device containing dual-depth drain-select-level isolation structures and methods for forming the same

Номер патента: WO2023229801A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-30.

Three-dimensional memory device and method for manufacturing the same

Номер патента: US11778823B2. Автор: Hang-Ting Lue,Teng-Hao Yeh,Guan-Ru Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2023-10-03.

Three-dimensional memory device with depletion region position control and method of erasing same using gate induced leakage

Номер патента: WO2021194538A1. Автор: Shinsuke YADA. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

Three-dimensional memory device containing dual-depth drain-select-level isolation structures and methods for forming the same

Номер патента: US20230389308A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-30.

Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same

Номер патента: WO2020146055A1. Автор: Tetsuya Shirasu,Akio Nishida,Yuji Fukano,Naohiro Hosoda,Kazuma Shimamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-16.

Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US20200295030A1. Автор: Johann Alsmeier,Tae-Kyung Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-17.

Three-dimensional memory device and manufacturing method therefor, and three-dimensional memory

Номер патента: EP4266369A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-25.

Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories

Номер патента: US20230422528A1. Автор: Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same

Номер патента: US20220230917A1. Автор: Fumitaka Amano,Yuji TOTOKI,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-07-21.

Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US11805649B2. Автор: Yanli Zhang,James Kai,Johann Alsmeier,Srinivas Pulugurtha. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-31.

Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

Номер патента: US20240032299A1. Автор: Hiroyuki Ogawa,Fumiaki TOYAMA,Masanori Tsutsumi,Kazutaka Yoshizawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-25.

Three-dimensional memory device with dielectric wall support structures and method of forming the same

Номер патента: WO2022072005A1. Автор: Tomohiro Kubo. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-04-07.

Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same

Номер патента: US20210358946A1. Автор: Yanli Zhang,James Kai,Johann Alsmeier,Srinivas Pulugurtha. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Three-dimensional memory containing a staircase with dummy steps and method of making thereof with step length control

Номер патента: US20230309298A1. Автор: Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-09-28.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240194262A1. Автор: Hiroyuki Ogawa,Takaaki IWAI,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240196612A1. Автор: Hiroyuki Ogawa,Takaaki IWAI,Masahiro Yaegashi,Akihiro Tobioka,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device with peripheral circuit located over support pillar array and method of making thereof

Номер патента: WO2022182383A1. Автор: Koichi Nakamura,Sadao FUKUNO,Shunsuke Ohya. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-01.

Manufacturing Methods of JFET-Type Compact Three-Dimensional Memory

Номер патента: US20170186817A1. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2017-06-29.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US20240071423A1. Автор: Fatma Arzum Simsek-Ege,Mingdong Cui,Richard E. Facekenthal. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09922831B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2018-03-20.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09859122B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2018-01-02.

Asymmetric high-K dielectric for reducing gate induced drain leakage

Номер патента: US09837319B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-12-05.

Asymmetric high-K dielectric for reducing gate induced drain leakage

Номер патента: US09768071B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-09-19.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09721843B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-08-01.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09685379B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-06-20.

Compact three-dimensional memory

Номер патента: US09666641B2. Автор: Guobiao Zhang. Владелец: CHENGDU HAICUN IP TECHNOLOGY LLC. Дата публикации: 2017-05-30.

Asymmetric high-K dielectric for reducing gate induced drain leakage

Номер патента: US09577061B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-02-21.

Asymmetric high-K dielectric for reducing gate induced drain leakage

Номер патента: US09570354B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-02-14.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09559010B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-01-31.

Level shift driver circuit capable of reducing gate-induced drain leakage current

Номер патента: US09548122B2. Автор: Po-Hao Huang. Владелец: eMemory Technology Inc. Дата публикации: 2017-01-17.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09543213B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2017-01-10.

Asymmetric high-k dielectric for reducing gate induced drain leakage

Номер патента: US09412667B2. Автор: Chung-Hsun Lin,Arvind Kumar,Shreesh Narasimha,Anthony I. Chou,Claude Ortolland,Jonathan T. SHAW. Владелец: International Business Machines Corp. Дата публикации: 2016-08-09.

Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same

Номер патента: US20220059454A1. Автор: Akihiro Shimada,Keisuke Shigemura,Haruki SUWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-24.

Channel structures for three-dimensional memory devices and methods for forming the same

Номер патента: US20230276623A9. Автор: Zhiliang Xia,Xiaoxin LIU,Xiaolong Du,Tingting Gao,Wanbo Geng,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-31.

Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

Номер патента: US12004348B2. Автор: Fumiaki TOYAMA,Yuki Mizutani,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-04.

Three-dimensional memory array with dual-level peripheral circuits and methods for forming the same

Номер патента: WO2022265680A1. Автор: Fumiaki TOYAMA,Yuki Mizutani,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-12-22.

Three-dimensional memory array with local line selector

Номер патента: US20230262985A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Three-dimensional memory array with local line selector

Номер патента: US12035534B2. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Three-dimensional memory array with local line selector

Номер патента: US20220254791A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Cheng-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: US20200294599A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-17.

Three-dimensional memory array with local line selector

Номер патента: US20240324230A1. Автор: Sheng-Chih Lai,Yu-Wei Jiang,Chen-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: US09721663B1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-01.

Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures

Номер патента: US09711530B1. Автор: Kiyohiko Sakakibara,Yusuke Ikawa,Eisuke Takii. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-07-18.

Self-selecting local bit line for a three-dimensional memory array

Номер патента: US09613689B1. Автор: Seje TAKAKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-04-04.

Three-dimensional memory device employing thinned insulating layers and methods for forming the same

Номер патента: US20210335805A1. Автор: James Kai,Johann Alsmeier,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-10-28.

Three-dimensional memory device containing bit line switches

Номер патента: US20200185397A1. Автор: Masatoshi Nishikawa,Toru Miwa,Naoki Ookuma,Takuya Ariki,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-11.

Staircase structure with multiple divisions for three-dimensional memory

Номер патента: US12052870B2. Автор: Zhiliang Xia,Zhong Zhang,Bo Huang,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Three-dimensional memory arrays with layer selector transistors

Номер патента: US12114479B2. Автор: Rajesh Kumar,Tahir Ghani,Abhishek A. Sharma,Mauro J. Kobrinsky,Swaminathan Sivakumar,Kinyip PHOA,Wilfred Gomes,Elliot Tan. Владелец: Intel Corp. Дата публикации: 2024-10-08.

Monolithic three dimensional memory arrays with staggered vertical bit line select transistors and methods therfor

Номер патента: US09530824B2. Автор: Yoshio Mori,Seje TAKAKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-27.

Word line structures for three-dimensional memory arrays

Номер патента: US11804252B2. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-10-31.

Integrated circuit including three-dimensional memory device

Номер патента: US11856786B2. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Integrated circuit including three-dimensional memory device

Номер патента: US20240090231A1. Автор: Yih Wang,Yu-Ming Lin,Sai-Hooi Yeong,Yi-Ching Liu,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Three dimensional memory array architecture

Номер патента: EP2891184A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2015-07-08.

Three dimensional memory array architecture

Номер патента: US20140295638A1. Автор: Federico Pio. Владелец: Micron Technology Inc. Дата публикации: 2014-10-02.

Word line structures for three-dimensional memory arrays

Номер патента: US20240029772A1. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2024-01-25.

Word line structures for three-dimensional memory arrays

Номер патента: US20230307025A1. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Reducing gate induced drain leakage in dram wordline

Номер патента: US20200176451A1. Автор: Gill Yong Lee,Jeffrey W. Anthis,Sang Ho Yu,Shih Chung CHEN,Sung-Kwan Kang. Владелец: Applied Materials Inc. Дата публикации: 2020-06-04.

Three-Dimensional Memory, Chip Package Structure, and Electronic Device

Номер патента: US20240222367A1. Автор: Junxing GU. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-04.

Three dimensional memory and method of operating the same

Номер патента: US20190043569A1. Автор: Yao-Ting Tsai,Yu-Kai Liao,Chiang-Hung Chen,Wen Hung. Владелец: Winbond Electronics Corp. Дата публикации: 2019-02-07.

Three-dimensional memory array incorporating serial chain diode stack

Номер патента: US6631085B2. Автор: Bendik Kleveland,Roy E. Scheuerlein,Thomas H. Lee,Mark G. Johnson,N. Johan Knall. Владелец: Matrix Semiconductor Inc. Дата публикации: 2003-10-07.

Three-dimensional memory device having a heterostructure quantum well channel

Номер патента: EP3262687A1. Автор: Peter Rabkin,Johann Alsmeier,Masaaki Higashitani,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US11792994B2. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Transition structures for three-dimensional memory arrays

Номер патента: US11756596B1. Автор: Lifang Xu,Indra V. Chary,Shuangqiang Luo. Владелец: Micron Technology Inc. Дата публикации: 2023-09-12.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20190148406A1. Автор: Fu-Chou Liu. Владелец: Nustorage Technology Co Ltd. Дата публикации: 2019-05-16.

Decoder architectures for three-dimensional memory devices

Номер патента: US20230395128A1. Автор: Fabio Pellizzer,Lorenzo Fratin,Paolo Fantini. Владелец: Micron Technology Inc. Дата публикации: 2023-12-07.

Selective floating gate semiconductor material deposition in a three-dimensional memory structure

Номер патента: WO2016089470A1. Автор: Hiroyuki Kamiya,Kensuke Yamaguchi. Владелец: SANDISK TECHNOLOGIES, INC.. Дата публикации: 2016-06-09.

Three dimensional memory structure

Номер патента: EP2965360A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corp. Дата публикации: 2016-01-13.

Three dimensional memory structure

Номер патента: US20150333085A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corp. Дата публикации: 2015-11-19.

Three dimensional memory structure

Номер патента: WO2014138056A1. Автор: Haitao Liu,Jie Sun,Krishna K. Parat,Chandra V. Mouli,Guangyu Huang. Владелец: Intel Corporation. Дата публикации: 2014-09-12.

Three-dimensional memory devices with backside isolation structures

Номер патента: US20210118988A1. Автор: LIANG Chen,WEI Liu,Cheng GAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-22.

Compact Three-Dimensional Memory with Semi-Conductive Address Line Portion

Номер патента: US20170221528A1. Автор: Guobiao Zhang. Владелец: CHENGDU HAICUN IP TECHNOLOGY LLC. Дата публикации: 2017-08-03.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023164911A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

Multiple transistor architecture for three-dimensional memory arrays

Номер патента: US20230307042A1. Автор: Ferdinando Bedeschi. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Multiple-stack three-dimensional memory device and fabrication method thereof

Номер патента: AU2018433803A1. Автор: Qian Tao,Zhenyu Lu,Jun Liu,Zongliang Huo,Yushi Hu,Lihong Xiao,Zhaohui Tang,Yuting Zhou,Sizhe Li,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-10-15.

Three-dimensional memory

Номер патента: US11991887B2. Автор: Chun-Chieh Lu,Yi-Ching Liu,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: EP4260372A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-18.

Three dimensional memory device

Номер патента: US20210280596A1. Автор: Chun-Min Cheng,Chien-Lan Chiu. Владелец: Macronix International Co Ltd. Дата публикации: 2021-09-09.

Monolithic three dimensional memory arrays formed using sacrificial polysilicon pillars

Номер патента: US09646880B1. Автор: Seje TAKAKI,Teruyuki Mine. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-09.

Discrete three-dimensional memory

Номер патента: US09396764B2. Автор: Guobiao Zhang. Владелец: Hangzhou Haicun Information Technology Co Ltd. Дата публикации: 2016-07-19.

Three-dimensional memory and fabricating method thereof

Номер патента: US11903189B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Bo-Feng YOUNG,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Word line structure of three-dimensional memory device

Номер патента: US11792989B2. Автор: Jia He,Zhiliang Xia,Qiang Xu,Zongliang Huo,Yaohua Yang,Fandong LIU,Wenyu HUA,Peizhen Hong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-17.

Word Line Decoder Circuitry under a Three-Dimensional Memory Array

Номер патента: US20190057741A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-02-21.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: EP3375012A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-09-19.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: WO2017142617A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-24.

Semiconductor structure for three-dimensional memory device and manufacturing method thereof

Номер патента: US20200312866A1. Автор: Yuan-Chieh Chiu,Yao-An Chung. Владелец: Macronix International Co Ltd. Дата публикации: 2020-10-01.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20210020650A1. Автор: Chih-Kai Yang,Tzung-Ting Han. Владелец: Macronix International Co Ltd. Дата публикации: 2021-01-21.

Three-dimensional memory device with vias connected to staircase structure

Номер патента: US11943915B2. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-03-26.

Multiple-stack three-dimensional memory device and fabrication method thereof

Номер патента: US20210043651A1. Автор: Qian Tao,Zhenyu Lu,Jun Liu,Zongliang Huo,Yushi Hu,Li Hong XIAO,Yu Ting ZHOU,Sizhe Li,Zhao Hui Tang,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-02-11.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11742288B2. Автор: Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-08-29.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20240015962A1. Автор: Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2024-01-11.

Multiple-stack three-dimensional memory device and fabrication method thereof

Номер патента: US11968832B2. Автор: Qian Tao,Zhenyu Lu,Jun Liu,Zongliang Huo,Yushi Hu,Li Hong XIAO,Yu Ting ZHOU,Sizhe Li,Zhao Hui Tang,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-23.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20230317609A1. Автор: Jin HO KIM,Chan Ho YOON. Владелец: SK hynix Inc. Дата публикации: 2023-10-05.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US11955429B2. Автор: Jin HO KIM,Chan Ho YOON. Владелец: SK hynix Inc. Дата публикации: 2024-04-09.

Word line decoder circuitry under a three-dimensional memory array

Номер патента: EP3660901A1. Автор: Hiroyuki Ogawa,Takuya Ariki,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-03.

Three-dimensional memory device and manufacturing method thereof

Номер патента: US20210366919A1. Автор: Jin HO KIM,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2021-11-25.

Three-dimensional memory arrays with layer selector transistors

Номер патента: US20210151438A1. Автор: Rajesh Kumar,Tahir Ghani,Abhishek A. Sharma,Mauro J. Kobrinsky,Swaminathan Sivakumar,Kinyip PHOA,Wilfred Gomes,Elliot Tan. Владелец: Intel Corp. Дата публикации: 2021-05-20.

Transistor having reduced gate-induced drain-leakage current

Номер патента: US20190341488A1. Автор: Kangguo Cheng,ChoongHyun Lee. Владелец: International Business Machines Corp. Дата публикации: 2019-11-07.

Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (gidl) and method for manufacturing the same

Номер патента: US20110275188A1. Автор: Min Soo Yoo. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-11-10.

Sparse piers for three-dimensional memory arrays

Номер патента: US20230309426A1. Автор: David H. Wells,Enrico Varesi,Lorenzo Fratin,Paolo Fantini,Stephen W. Russell. Владелец: Micron Technology Inc. Дата публикации: 2023-09-28.

Method for fabricating three-dimensional memory

Номер патента: US20240172433A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Bo-Feng YOUNG,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Twin channel access device for vertical three-dimensional memory

Номер патента: US20240188280A1. Автор: Haitao Liu,Scott E. Sills,Kamal M. Karda,Si-Woo Lee. Владелец: Micron Technology Inc. Дата публикации: 2024-06-06.

Twin channel access device for vertical three-dimensional memory

Номер патента: WO2024118710A1. Автор: Haitao Liu,Scott E. Sills,Kamal M. Karda,Si-Woo Lee. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2024-06-06.

Select gate gate-induced-drain-leakage enhancement

Номер патента: US11742380B2. Автор: Haitao Liu,Matthew J. King,Albert Fayrushin. Владелец: Micron Technology Inc. Дата публикации: 2023-08-29.

Three dimensional memory

Номер патента: US11949022B2. Автор: Zhenyu Lu,Minsoo Lee,Roger W. Lindsay,Gordon A. Haller,Hongbin Zhu,Andrew Bicksler,Brian J. Cleereman. Владелец: Micron Technology Inc. Дата публикации: 2024-04-02.

Three-dimensional memory and formation method thereof

Номер патента: US20230371231A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Weiping BAI,Xingsong SU,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-16.

Hole pre-charge scheme using gate induced drain leakage generation

Номер патента: US20210408024A1. Автор: Yanli Zhang,Peng Zhang,Huai-Yuan Tseng,Sarath Puthenthermadam. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-30.

Reduction of gate-induced drain leakage in semiconductor devices

Номер патента: EP1023745A1. Автор: Karanam Balasubramanyam,Jeffrey P. Gambino,Martin Gall,Jack A. Mandelman. Владелец: International Business Machines Corp. Дата публикации: 2000-08-02.

Three-dimensional memory device containing a lateral source contact and method of making the same

Номер патента: US09824966B1. Автор: Yanli Zhang,James Kai,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-21.

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Номер патента: US20210050371A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Seung-Yeul Yang,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: US20240274191A1. Автор: Koichi Matsuno,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-15.

Three-dimensional memory device including laterally separated source lines and method of making the same

Номер патента: US20240127864A1. Автор: James Kai,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-18.

Three-dimensional memory device with integrated contact and support structure and method of making the same

Номер патента: WO2024172891A1. Автор: Koichi Matsuno,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-22.

Three-dimensional memory device containing memory openings arranged in non-equilateral triangular layout and method of making thereof

Номер патента: US20240332177A1. Автор: Fei Zhou,Ryo Nakamura,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof

Номер патента: US12016179B2. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-18.

Three dimensional memory and methods of forming the same

Номер патента: US09780115B2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-10-03.

Three dimensional memory and methods of forming the same

Номер патента: US09379005B2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2016-06-28.

Three-dimensional memory device having a shielding layer and method for forming the same

Номер патента: US11758729B2. Автор: Zhiliang Xia,Jun Chen,Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Номер патента: US09478495B1. Автор: Peter Rabkin,Jayavel Pachamuthu,Christopher Petti,Jilin XIA. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-25.

Multi-deck three-dimensional memory devices and methods for forming the same

Номер патента: US10600763B1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-03-24.

Multi-deck three-dimensional memory devices and methods for forming the same

Номер патента: US20200194403A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-06-18.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20190157280A1. Автор: Zhe Wang,Peng Cheng Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-05-23.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20200126999A1. Автор: Zhe Wang,Peng Cheng Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-04-23.

Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof

Номер патента: US09818801B1. Автор: Peter Rabkin,Christopher J. Petti,Masaaki Higashitani,Perumal Ratnam. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-14.

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

Номер патента: US20210066461A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Zhengliang Xia. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-04.

Three-dimensional memory device with corrosion-resistant composite spacer

Номер патента: US20210104540A1. Автор: LU Zhang,Bo Xu,Chuan Yang,Ping Yan,Jing Gao,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Three-dimensional memory device having multi-deck structure and methods for forming the same

Номер патента: US20210091102A1. Автор: Juan Tang,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-25.

Staircase etch control in forming three-dimensional memory device

Номер патента: US12142575B2. Автор: Zhenyu Lu,Simon Shi-ning Yang,Dan Liu,Feng Pan,Xiaowang DAI,Steve Weiyi Yang,Yongna LI,Lidong SONG. Владелец: Yangtza Memory Technologies Co Ltd. Дата публикации: 2024-11-12.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240194263A1. Автор: Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same

Номер патента: US12082408B2. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory device including discrete charge storage elements and methods of forming the same

Номер патента: US20220093644A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-03-24.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240312522A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-19.

Three-dimensional memory devices having through stair contacts and methods for forming the same

Номер патента: US12035530B2. Автор: Jianhua Sun,Ji XIA,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof

Номер патента: US09935050B2. Автор: Zhenyu Lu,Yuki Mizutani,Mohan DUNGA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-03.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4401116A2. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formation

Номер патента: US20240250023A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Three-dimensional memory device and method of making thereof including expanded support openings and double spacer word line contact formation

Номер патента: US20240251551A1. Автор: Koichi Matsuno,Johann Alsmeier,Jixin Yu,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-25.

Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same

Номер патента: US20230345732A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Yi-Ching Liu,Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12069854B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-20.

Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same

Номер патента: US20240290714A1. Автор: James Kai,Koichi Matsuno,Johann Alsmeier,Jixin Yu,Mark D. Kraman,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-29.

Three-dimensional memory device containing heterojunction source layer and method for manufacturing the same

Номер патента: US20240268115A1. Автор: Xiang Yang,Wei Cao,Koichi Matsuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-08.

Staircase bridge structures for word line contacts in three-dimensional memory

Номер патента: US20230335170A1. Автор: Qiang Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-19.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: EP4401116A3. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-04.

Three-dimensional memory device and method for forming the same

Номер патента: US12082407B2. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20210384118A1. Автор: Zhiliang Xia,Di Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-09.

Three-dimensional memory device and method for forming the same

Номер патента: US20230005864A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-01-05.

Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same

Номер патента: WO2024182038A1. Автор: James Kai,Koichi Matsuno,Johann Alsmeier,Jixin Yu,Mark D. Kraman,Seyyed Ehsan Esfahani Rashidi,Ruogu Matthew ZHU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-06.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12113037B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-08.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: EP4362624A3. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-16.

Three-Dimensional Memory Device and Method

Номер патента: US20220359270A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US20240274535A1. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-15.

Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

Номер патента: US11758722B2. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210320124A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-10-14.

Three-dimensional memory device and method

Номер патента: US20240312830A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Three-dimensional memory device and operating method of a storage device including the same

Номер патента: US09401214B2. Автор: Donghun Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-26.

Three-dimensional memory device containing doped source-channel interface structure and method of making the same

Номер патента: US20240147723A1. Автор: Hiroyuki Ogawa,Tadashi Nakamura,Takashi Yuda,Nobuyuki Fujimura,Motoo OHAGA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-02.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12033957B2. Автор: Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Three-dimensional memory device with embedded dynamic random-access memory

Номер патента: EP4401127A2. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

Methods for forming three-dimensional memory devices with backside source contacts

Номер патента: US12048151B2. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US20220293533A1. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Three-dimensional memory device and method for manufacturing the same

Номер патента: US20210305272A1. Автор: Jin LYU,Kai Jin Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-30.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: US12133386B2. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Through-memory-level via structures for a three-dimensional memory device

Номер патента: US09806093B2. Автор: Hiroyuki Ogawa,Fumiaki TOYAMA,Yuki Mizutani. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-31.

Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same

Номер патента: US20190267391A1. Автор: James Kai,Muneyuki IMAI. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-08-29.

Three-dimensional memory device having pocket structure in memory string and method for forming the same

Номер патента: US12029038B2. Автор: Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-02.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: US12033966B2. Автор: He Chen,LIANG XIAO,Yongqing Wang,Shu Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Three-dimensional memory device with backside source contact

Номер патента: EP4401139A2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-17.

Three-dimensional memory device and fabrication method thereof

Номер патента: US11978737B2. Автор: Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-07.

Three-dimensional memory device with backside interconnect structures

Номер патента: US12082411B2. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Three-dimensional memory device comprising contact pads exposed by an opening passing through layer stack and fabrication method thereof

Номер патента: US12089406B2. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Three-dimensional memory device with backside source contact

Номер патента: EP4401139A3. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-16.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: US12074105B2. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-27.

Three-dimensional memory device with backside source contact

Номер патента: US12136618B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Through-memory-level via structures for a three-dimensional memory device

Номер патента: US09818759B2. Автор: Jin Liu,Hiroyuki Ogawa,James Kai,Johann Alsmeier,Jixin Yu,Yoko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-14.

Through-memory-level via structures for a three-dimensional memory device

Номер патента: US09818693B2. Автор: Jin Liu,Hiroyuki Ogawa,James Kai,Johann Alsmeier,Fumiaki TOYAMA,Yuki Mizutani,Jixin Yu,Yoko Furihata. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-11-14.

Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: US12022656B2. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: WO2024118277A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: US20240179908A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Metal word lines for three dimensional memory devices

Номер патента: EP3224863A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Senaka Krishna Kanakamedala,Sateesh KOKA,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-04.

Three-dimensional memory devices and methods for forming the same

Номер патента: US12058858B2. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Three dimensional memory device and method for fabricating the same

Номер патента: US20200119025A1. Автор: Chieh-Fang Chen,Yu-Wei Jiang,Jia-Rong Chiou. Владелец: Macronix International Co Ltd. Дата публикации: 2020-04-16.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: US20240363165A1. Автор: Hiroyuki Tanaka,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Kento SAKANE. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-31.

Metal word lines for three dimensional memory devices

Номер патента: US09570455B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Senaka Krishna Kanakamedala,Sateesh KOKA,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-02-14.

Interconnect structure of three-dimensional memory device

Номер патента: US12137567B2. Автор: Zhenyu Lu,Feng Pan,Wenguang Shi,Steve Weiyi Yang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same

Номер патента: WO2019018050A1. Автор: Tong Zhang,James Kai,Takashi Orimoto,Johann Alsmeier,Shinsuke YADA,Akihisa SAI,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-24.

Three-dimensional memory device with logic signal routing through a memory die and methods of making the same

Номер патента: US20200343235A1. Автор: Yanli Zhang,Johann Alsmeier,Kwang-Ho Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-10-29.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: WO2023108330A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-06-22.

Three-dimensional memory device and fabrication method thereof

Номер патента: US20210296351A1. Автор: Linchun Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-23.

Architecture of three-dimensional memory device and methods regarding the same

Номер патента: US12068192B2. Автор: Enrico Varesi,Lorenzo Fratin,Paolo Fantini. Владелец: Micron Technology Inc. Дата публикации: 2024-08-20.

Three-dimensional memory device including laterally separated source lines and method of making the same

Номер патента: WO2024086545A1. Автор: James Kai,Johann Alsmeier,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-25.

Structures and methods for reducing stress in three-dimensional memory device

Номер патента: US20210050446A1. Автор: Jian Hua SUN,Ji XIA,Sizhe Li,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-02-18.

Three-dimensional memory devices having hydrogen blocking layer and fabrication methods thereof

Номер патента: US11728236B2. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-15.

Three-dimensional memory device structures and methods

Номер патента: US12052874B2. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Contact structures for three-dimensional memory

Номер патента: EP3928351A1. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-29.

Contact structures for three-dimensional memory

Номер патента: US20210287991A1. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-16.

Three-dimensional memory device and method

Номер патента: US20240284679A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Alternating refractive index in charge-trapping film in three-dimensional memory

Номер патента: US09666593B2. Автор: Yingda Dong,Liang PANG,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-30.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20220077181A1. Автор: Zhu Yang,CHEN ZUO,ZHEN Guo,BIN Yuan,Jingjing Geng,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-10.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2024130656A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-06-27.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240212753A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215271A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240215272A1. Автор: Tao Yang,LEI Liu,Zhiliang Xia,Di Wang,Kun Zhang,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-27.

Three-dimensional memory devices

Номер патента: US20240292629A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-29.

Three-dimensional memory devices

Номер патента: WO2024178583A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-09-06.

Three-dimensional memory devices

Номер патента: WO2024178583A8. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-10-03.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: EP4454434A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-30.

Three-dimensional memory devices having through array contacts and methods for forming the same

Номер патента: US20210104531A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Three-dimensional memory devices having through stair contacts and methods for forming the same

Номер патента: US20230301105A1. Автор: Jianhua Sun,Ji XIA,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-21.

Three-dimensional memory devices

Номер патента: US12020750B2. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Yuancheng YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

Three-dimensional memory device with backside interconnect structures

Номер патента: US20240341096A1. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Kun Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-10.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US12136599B2. Автор: He Chen,Yi Zhao,Shu Wu,Siping Hu,Ziqun HUA,Zhen Pan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US11302715B2. Автор: Jun Liu,Li Hong XIAO,Yu Ting ZHOU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-04-12.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11935862B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-19.

Three-dimensional memory devices having through array contacts and methods for forming the same

Номер патента: US20200066739A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-02-27.

Three-dimensional memory devices having through array contacts and methods for forming the same

Номер патента: US20200161322A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-05-21.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4285413A1. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-06.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11812611B2. Автор: Qiguang Wang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-07.

Three-dimensional memory device with source line isolation and method of making the same

Номер патента: US20240105622A1. Автор: Ramy Nashed Bassely SAID,Jiahui Yuan,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Three-dimensional memory device with source line isolation and method of making the same

Номер патента: US20240105623A1. Автор: Ramy Nashed Bassely SAID,Jiahui Yuan,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Methods for forming three-dimensional memory device without conductor residual caused by dishing

Номер патента: US20200381452A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-03.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Номер патента: US20230301106A1. Автор: Zhu Yang,CHEN ZUO,ZHEN Guo,BIN Yuan,Jingjing Geng,Xiangning Wang,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-21.

Staircase structure in three-dimensional memory device and method for forming the same

Номер патента: US12002757B2. Автор: Zhiliang Xia,Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-04.

Three-dimensional memory device with source line isolation and method of making the same

Номер патента: WO2024063830A1. Автор: Ramy Nashed Bassely SAID,Jiahui Yuan,Lito De La RAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-28.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US12035524B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Bias to detect and prevent short circuits in three-dimensional memory device

Номер патента: WO2016022320A1. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-02-11.

Memory device including multiple gate-induced drain leakage current generator circuits

Номер патента: US20180211710A1. Автор: Shuji Tanaka,Masanobu Saito,Shinji Sato. Владелец: Micron Technology Inc. Дата публикации: 2018-07-26.

Memory device including multiple gate-induced drain leakage current generator circuits

Номер патента: US09916901B1. Автор: Shuji Tanaka,Masanobu Saito,Shinji Sato. Владелец: Micron Technology Inc. Дата публикации: 2018-03-13.

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Номер патента: US09842857B2. Автор: Srikanth Ranganathan,Raghuveer S. Makala,Johann Alsmeier,Rahul Sharangpani,Sateesh KOKA,Mark JUANITAS. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-12.

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Номер патента: US09613977B2. Автор: Srikanth Ranganathan,Raghuveer S. Makala,Johann Alsmeier,Rahul Sharangpani,Sateesh KOKA,Mark JUANITAS. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-04-04.

Three-dimensional memory devices and methods for forming the same

Номер патента: WO2023272578A1. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-01-05.

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

Номер патента: US20210159244A1. Автор: Wei Xu,Pan Huang,Beihan Wang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-27.

Three-dimensional memory devices, systems, and methods for forming the same

Номер патента: US20240040789A1. Автор: XIN Wang,Wenshan Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-01.

Three dimensional memory and methods of forming the same

Номер патента: US20210183887A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2021-06-17.

Three dimensional memory and methods of forming the same

Номер патента: EP4109537A2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2022-12-28.

Three dimensional memory and methods of forming the same

Номер патента: EP2586060A2. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2013-05-01.

Three dimensional memory and methods of forming the same

Номер патента: US20200119046A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2020-04-16.

Three dimensional memory and methods of forming the same

Номер патента: US20230413559A1. Автор: John K. Zahurak,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2023-12-21.

Three-dimensional memory device having multi-deck structure and methods for forming the same

Номер патента: US11792979B2. Автор: Juan Tang,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-17.

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Номер патента: US20200105595A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR,Senaka Krishna Kanakamedala,Fumitaka Amano,Genta Mizuno. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-02.

Three-dimensional memory devices having through array contacts and methods for forming the same

Номер патента: US20210082931A1. Автор: Hongbin Zhu,Yushi Hu,Ji XIA,Mei Lan GUO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-03-18.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11805646B2. Автор: Qian Tao,Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Yushi Hu,Jifeng Zhu,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

Three-dimensional memory device with source structure and methods for forming the same

Номер патента: US11785772B2. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-10.

Three-dimensional memory device having multi-deck structure and methods for forming the same

Номер патента: US20210126002A1. Автор: Juan Tang,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-29.

Methods for forming three-dimensional memory device without conductor residual caused by dishing

Номер патента: US20200251487A1. Автор: Zhao Hui Tang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-06.

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

Номер патента: US20210159238A1. Автор: Wei Xu,Pan Huang,Beihan Wang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-27.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210098484A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-01.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210098587A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-01.

Protective material to prevent short circuits in three-dimensional memory device

Номер патента: WO2016022319A2. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-02-11.

Protective material to prevent short circuits in three-dimensional memory device

Номер патента: WO2016022319A3. Автор: Wei Zhao,Yingda Dong,Jayavel Pachamuthu,Jiahui Yuan. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2016-05-06.

Three-dimensional memory device with ferroelectric material

Номер патента: US12101939B2. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Methods for forming three-dimensional memory devices

Номер патента: US20240321777A1. Автор: Di Wang,Zhong Zhang,Wenxi Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-26.

Staircase connection structure for three-dimensional memory devices

Номер патента: US20240355734A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Cuicui Kong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-24.

Hybrid bonding contact structure of three-dimensional memory device

Номер патента: US12137568B2. Автор: Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Feng Pan,GuanPing WU,Weihua Cheng,Wenguang Shi,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Three-Dimensional Memory Device with Ferroelectric Material

Номер патента: US20240365553A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Three-dimensional memory device and methods for forming the same

Номер патента: EP4288997A1. Автор: Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same

Номер патента: US11935596B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-19.

Cache program operation of three-dimensional memory device with static random-access memory

Номер патента: EP3909048A1. Автор: Chun Yuan Hou,Yueping Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-11-17.

Three-dimensional memory devices having through stair contacts and methods for forming the same

Номер патента: US20240023333A1. Автор: Jianhua Sun,Ji XIA,Qinxiang Wei. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-18.

Three-dimensional memory device and method

Номер патента: US11856781B2. Автор: Sheng-Chih Lai,Hung-Chang Sun,Yu-Wei Jiang,TsuChing Yang,Kuo Chang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Three-dimensional memory device having a shielding layer and method for forming the same

Номер патента: US11758731B2. Автор: Zhiliang Xia,Jun Chen,Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Three-dimensional memory device with separated contact regions and methods for forming the same

Номер патента: US11889694B2. Автор: Hiroyuki Ogawa,Zhixin Cui,Hardwell Chibvongodze,Rajdeep Gautam. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-30.

Three-dimensional memory device with separated contact regions and methods for forming the same

Номер патента: US11792988B2. Автор: Hiroyuki Ogawa,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-17.

Three-dimensional memory devices having backside insulating structures and methods for forming the same

Номер патента: US11849585B2. Автор: Jin Yong Oh. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-19.

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

Номер патента: US11792980B2. Автор: Wei Xu,Pan Huang,Beihan Wang,Wenxiang Xu,Ji XIA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-17.

Three-dimensional memory device and methods for forming the same

Номер патента: EP4289005A1. Автор: Mingkang ZHANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openings

Номер патента: US20240178129A1. Автор: Takaaki IWAI,Takayuki MAEKURA,Keisuke Izumi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Three-dimensional memory devices and methods for forming the same

Номер патента: US11996152B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-28.

Three-dimensional memory device with separated contact regions and methods for forming the same

Номер патента: US11996153B2. Автор: Hiroyuki Ogawa,James Kai,Yuki Mizutani,Masaaki Higashitani,Hisakazu Otoi. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-28.

Three-dimensional memory devices and methods for forming the same

Номер патента: EP4201164A1. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-28.

Three-dimensional memory device with support structures in slit structures and method for forming the same

Номер патента: US20200395374A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US20220037267A1. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-02-03.

Three-dimensional memory device and method

Номер патента: US20240114690A1. Автор: Sheng-Chih Lai,Hung-Chang Sun,Yu-Wei Jiang,TsuChing Yang,Kuo Chang Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Memory cell structure of a three-dimensional memory device

Номер патента: US12063780B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Zhong Zhang,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Jin Wen DONG,Ji XIA,Yan Ni LI. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-13.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: US10714493B2. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbin Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-07-14.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: WO2021007781A1. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2021-01-21.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Номер патента: EP4362624A2. Автор: Yong Zhang,Fushan Zhang,Enbo Wang,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-01.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: US20210020566A1. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-01-21.

Three-dimensional memory devices with stabilization structures between memory blocks and methods for forming the same

Номер патента: US12010834B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-11.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: US20210183765A1. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-17.

Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: EP3963630A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-03-09.

Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: US20210225863A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-07-22.

Three-dimensional memory devices with lateral block isolation structures and methods of forming the same

Номер патента: US20240196616A1. Автор: Tomohiro Kubo,Akihiro Tobioka. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Cache program operation of three-dimensional memory device with static random-access memory

Номер патента: US12019919B2. Автор: Yue Ping Li,Chun Yuan Hou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-25.

Three-dimensional memory device including replacement insulating layers and methods of forming the same

Номер патента: US20230354608A1. Автор: Fei Zhou,Raghuveer S. Makala,Masanori Tsutsumi,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-02.

Three-dimensional memory device

Номер патента: US20240334699A1. Автор: Chanho Kim,Kyunghwa Yun,Younghak Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Three-dimensional memory device with embedded dynamic random-access memory

Номер патента: WO2020220280A1. Автор: Jun Liu. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-11-05.

Methods for forming three-dimensional memory devices with supporting structure for staircase region

Номер патента: US11901313B2. Автор: Zhong Zhang,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

Methods for forming three-dimensional memory devices with backside source contacts

Номер патента: US11963349B2. Автор: Zhiliang Xia,Kun Zhang,Wenxi Zhou,Zongliang Huo,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-16.

Methods for forming three-dimensional memory devices

Номер патента: US20200286911A1. Автор: Linchun Wu,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-09-10.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20240021247A1. Автор: Xin Zhang,Chuan Yang,Qian Gao,Yujun Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-18.

Contact pads of three-dimensional memory device and fabrication method thereof

Номер патента: WO2022120630A1. Автор: Yongqing Wang,Siping Hu. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-06-16.

Metal word lines for three dimensional memory devices

Номер патента: WO2016085569A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Senaka Krishna Kanakamedala,Sateesh KOKA,Yao-Sheng Lee. Владелец: SANDISK TECHNOLOGIES, INC.. Дата публикации: 2016-06-02.

Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

Номер патента: EP3931868A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-05.

Three-dimensional memory device and method

Номер патента: US12027412B2. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Multiple gate-induced drain leakage current generator

Номер патента: WO2018140084A1. Автор: Shuji Tanaka,Masanobu Saito,Shinji Sato. Владелец: MICRON TECHNOLOGY, INC. Дата публикации: 2018-08-02.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240292622A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-29.

Multi tier three-dimensional memory devices including vertically shared bit lines

Номер патента: US09502471B1. Автор: Wei Zhao,Zhenyu Lu,Koji Miyata,Tong Zhang,James Kai,Johann Alsmeier,Man Mui,Gerrit Jan Hemink,Henry Chien,Wenguang Shi,Christopher Petti,Xiaolong Hu,Jiyin Xu. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-11-22.

Methods for forming three-dimensional memory device having channel structures with native oxide layer

Номер патента: WO2020073158A1. Автор: LEI Jin,Hongtao Liu,Qiguang Wang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2020-04-16.

Interconnect structures of three-dimensional memory devices

Номер патента: US11903204B2. Автор: Zhiliang Xia,Kun Zhang,Kun Bao,Haojie Song. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

Three-dimensional memory device with reduced local stress

Номер патента: US11800707B2. Автор: Tuo Li,Jingjing Geng,Shuangshuang PENG,Jiajia Wu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-24.

Interconnect structures of three-dimensional memory devices

Номер патента: US20240114687A1. Автор: Zhiliang Xia,Kun Zhang,Kun Bao,Haojie Song. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-04.

Method and structure for forming stairs in three-dimensional memory devices

Номер патента: US20210134830A1. Автор: Zhu Yang,CHEN ZUO,Jingjing Geng,Xiangning Wang,Xinxin LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-05-06.

Self-aligned contacts in three-dimensional memory devices and methods for forming the same

Номер патента: US20230102519A1. Автор: Juan Tang,Hongbin Zhu,Zi Qun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-30.

Method and structure for forming stairs in three-dimensional memory devices

Номер патента: US20230095343A1. Автор: Zhu Yang,CHEN ZUO,Jingjing Geng,Xiangning Wang,Xinxin LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-30.

Three-dimensional memory device with ferroelectric material

Номер патента: US20240334708A1. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20220246544A1. Автор: He Chen,Yi Zhao,Shu Wu,Siping Hu,Ziqun HUA,Zhen Pan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-08-04.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US11943923B2. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-26.

Three dimensional memory device and method for fabricating the same

Номер патента: US20200203363A1. Автор: Hang-Ting Lue. Владелец: Macronix International Co Ltd. Дата публикации: 2020-06-25.

Three-dimensional memory devices and memory system

Номер патента: US11929119B2. Автор: LIANG Chen,WEI Liu,Zhiliang Xia,Kun Zhang,Wenxi Zhou,Yuancheng YANG,Yanhong Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230422524A1. Автор: Tao Yang,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Yuancheng YANG,Dongxue Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Three-dimensional memory device and fabrication method

Номер патента: US20230402425A1. Автор: Yang Zhou,SHENG Peng,Jing Gao,Kai Yu,Wenbo Zhang,Zhiyong Lu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-14.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230422520A1. Автор: WEI Liu,Zhiliang Xia,Wenxi Zhou,Zongliang Huo,Dongxue Zhao,Dongyu FAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240170425A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2024108435A1. Автор: Di Wang,Kun Zhang,Wenxi Zhou,Lei Xue. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-30.

Method and structure for forming stairs in three-dimensional memory devices

Номер патента: US11950418B2. Автор: Zhu Yang,CHEN ZUO,Jingjing Geng,Xiangning Wang,Xinxin LIU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-02.

Local contacts of three-dimensional memory devices and methods for forming the same

Номер патента: US20210272982A1. Автор: Zhiliang Xia,Kun Zhang,Jianzhong Wu,Wenxi Zhou,Tingting Zhao,Zhongwang SUN,Rui Su. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-02.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: EP4218056A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-02.

Three-dimensional memory device with ferroelectric material

Номер патента: US12041781B2. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Plane decoding method and device for three dimensional memories

Номер патента: US6906940B1. Автор: Hang-Ting Lue. Владелец: Macronix International Co Ltd. Дата публикации: 2005-06-14.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2024108427A1. Автор: Zhiliang Xia,Jing Gao,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2024-05-30.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240170424A1. Автор: Zhiliang Xia,Jing Gao,Kun Zhang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-23.

Three-dimensional memory device erase operation

Номер патента: US20220293626A1. Автор: Feng Xu,LEI Jin,Jie Yuan,Shiyu Xia,Wenqiang CHEN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-09-15.

Staircase structures for accessing three-dimensional memory arrays

Номер патента: US20240021521A1. Автор: Yiping Wang,Collin Howder,Harsh Narendrakumar Jain,Martin Jared Barclay. Владелец: Micron Technology Inc. Дата публикации: 2024-01-18.

Three-dimensional memory device erase operation

Номер патента: US11521988B2. Автор: Feng Xu,LEI Jin,Jie Yuan,Shiyu Xia,Wenqiang CHEN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-12-06.

Three-dimensional memory devices and methods for forming the same

Номер патента: US20210242233A1. Автор: Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-05.

Formation of antifuse structure in a three dimensional memory

Номер патента: US20020106838A1. Автор: James Cleeves,Michael Vyvoda,N. Knall. Владелец: Individual. Дата публикации: 2002-08-08.

Hybrid bonding contact structure of three-dimensional memory device

Номер патента: US20230363169A1. Автор: Zhenyu Lu,Simon Shi-ning Yang,Jun Chen,Feng Pan,GuanPing WU,Weihua Cheng,Wenguang Shi,Steve Weiyi Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Contact structures for three-dimensional memory

Номер патента: US11862565B2. Автор: LEI Liu,Zhiliang Xia,Zhong Zhang,Wenxi Zhou,Zhongwang SUN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-02.

Three-dimensional memory device and method

Номер патента: US20230389326A1. Автор: Chung-Te Lin,Katherine H. Chiang,Chia-Yu Ling. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings

Номер патента: US20230354609A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-02.

Three-dimensional memory device and method

Номер патента: US11856782B2. Автор: Chung-Te Lin,Katherine H. Chiang,Chia-Yu Ling. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Three-dimensional memory device and method

Номер патента: US11985830B2. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

Three-dimensional memory devices and fabrication methods thereof

Номер патента: US20210104548A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Three-dimensional memory device and methods of forming

Номер патента: US20210375940A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Three-dimensional memory device

Номер патента: US11832446B2. Автор: Hock Chun Chin. Владелец: United Microelectronics Corp. Дата публикации: 2023-11-28.

Three-dimensional memory device

Номер патента: US20220077179A1. Автор: Hock Chun Chin. Владелец: United Microelectronics Corp. Дата публикации: 2022-03-10.

Memory cell structure of three-dimensional memory device

Номер патента: WO2019042103A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Zhong Zhang,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Jinwen Dong,Ji XIA,Yanni LI. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2019-03-07.

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Номер патента: WO2016209379A1. Автор: Srikanth Ranganathan,Raghuveer S. Makala,Johann Alsmeier,Rahul Sharangpani,Sateesh KOKA,Mark JUANITAS. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-12-29.

Semiconductor memory device with three-dimensional memory cells

Номер патента: US11917826B2. Автор: Fumihiro Kono. Владелец: Kioxia Corp. Дата публикации: 2024-02-27.

Semiconductor memory device including three-dimensional memory cell arrays

Номер патента: US20200251493A1. Автор: Fumihiro Kono. Владелец: Toshiba Memory Corp. Дата публикации: 2020-08-06.

Three-dimensional memory device structures and methods

Номер патента: US20220302144A1. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-22.

Three-dimensional memory device structures and methods

Номер патента: US20220302143A1. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-22.

Three-dimensional memory device structures and methods

Номер патента: US11670698B2. Автор: Chung-Liang Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-06-06.

Wiring line structure of three-dimensional memory device

Номер патента: US20190067316A1. Автор: Dong-Hyuk Kim,Sung-Lae OH,Soo-Nam Jung. Владелец: SK hynix Inc. Дата публикации: 2019-02-28.

Select gate transistor with single crystal silicon for three-dimensional memory

Номер патента: WO2017074577A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-04.

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Номер патента: EP3314634A1. Автор: Srikanth Ranganathan,Raghuveer S. Makala,Johann Alsmeier,Rahul Sharangpani,Sateesh KOKA,Mark JUANITAS. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-02.

Semiconductor memory device with three-dimensional memory cells

Номер патента: US10332907B2. Автор: Fumihiro Kono. Владелец: Toshiba Memory Corp. Дата публикации: 2019-06-25.

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Номер патента: US20170162597A1. Автор: Srikanth Ranganathan,Raghuveer S. Makala,Johann Alsmeier,Rahul Sharangpani,Sateesh KOKA,Mark JUANITAS. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-06-08.

Semiconductor memory device with three-dimensional memory cells

Номер патента: US20240172442A1. Автор: Fumihiro Kono. Владелец: Kioxia Corp. Дата публикации: 2024-05-23.

Select gate transistor with single crystal silicon for three-dimensional memory

Номер патента: EP3332425A1. Автор: Jin Liu,Yanli Zhang,Raghuveer S. Makala,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-06-13.

Gate induced drain leakage reduction in finfets

Номер патента: US20210217876A1. Автор: Takashi Ando,Alexander Reznicek,Jingyun Zhang,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2021-07-15.

Three dimensional memory device

Номер патента: US9576976B1. Автор: Teng-Hao Yeh,Chih-Wei Hu. Владелец: Macronix International Co Ltd. Дата публикации: 2017-02-21.

Data lines in three-dimensional memory devices

Номер патента: US11830767B2. Автор: Yi Hu. Владелец: Micron Technology Inc. Дата публикации: 2023-11-28.

Multiple-stack three-dimensional memory device and fabrication method thereof

Номер патента: US20240179911A1. Автор: Qian Tao,Zhenyu Lu,Jun Liu,Zongliang Huo,Yushi Hu,Li Hong XIAO,Yu Ting ZHOU,Sizhe Li,Zhao Hui Tang,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-30.

Openings layout of three-dimensional memory device

Номер патента: US20240107757A1. Автор: Jia He,Zhiliang Xia,Zongliang Huo,Baoyou Chen,Yaohua Yang,Qingchen CAO,Yaobin FENG,Fandong LIU,Peizhen Hong,Haihui Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-28.

Openings layout of three-dimensional memory device

Номер патента: US11903195B2. Автор: Jia He,Zhiliang Xia,Zongliang Huo,Baoyou Chen,Yaohua Yang,Qingchen CAO,Yaobin FENG,Fandong LIU,Peizhen Hong,Haihui Huang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-13.

Three-dimensional memory device and fabrication method for improved yield and reliability

Номер патента: US20240179901A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo,Yuhui HAN,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-30.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20240185918A1. Автор: Xiaoxin LIU,Zongliang Huo,Lei Xue. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-06.

Word line structure of three-dimensional memory device

Номер патента: US20230413560A1. Автор: Jia He,Zhiliang Xia,Qiang Xu,Zongliang Huo,Yaohua Yang,Fandong LIU,Wenyu HUA,Peizhen Hong. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-21.

Method for Forming Staircase Structure of Three-Dimensional Memory Device

Номер патента: US20200219894A1. Автор: Jian Xu,Li Hong XIAO,Yu Ting ZHOU,Sizhe Li,Zhao Hui Tang,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-07-09.

Method for Forming Staircase Structure of Three-Dimensional Memory Device

Номер патента: US20190326312A1. Автор: Jian Xu,Li Hong XIAO,Yu Ting ZHOU,Sizhe Li,Zhao Hui Tang,Zhaosong Li. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-10-24.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20190074291A1. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-03-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: EP3844806A1. Автор: Jun Liu,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-07-07.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11844216B2. Автор: Jun Liu,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-12.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11800710B2. Автор: Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-24.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US20230282280A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-07.

Staircase formation in three-dimensional memory device

Номер патента: US20240145296A1. Автор: Yu Ting ZHOU. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-02.

Three-dimensional memory device with ferroelectric material

Номер патента: US11616080B2. Автор: Yu-Ming Lin,Han-Jong Chia,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-28.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: US11991880B2. Автор: Qian Tao,Zhenyu Lu,Jun Chen,Yushi Hu,Jifeng Zhu,Xiaowang DAI,Yu Ru Huang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-21.

Selective polysilicon doping for gate induced drain leakage improvement

Номер патента: US20190237485A1. Автор: Ruey-Hsin Liu,Ming-Ta Lei,Chen-Liang Chu,Chih-Wen Albert Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-08-01.

Three-dimensional memory devices and fabricating methods thereof

Номер патента: WO2023164861A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-09-07.

Semiconductor device with leakage current guide path and method for fabricating the same

Номер патента: US12100733B2. Автор: Wei-Zhong Li,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-24.

Gate induced drain leakage reduction in FinFETs

Номер патента: US11855180B2. Автор: Takashi Ando,Alexander Reznicek,Jingyun Zhang,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2023-12-26.

Gate induced drain leakage reduction in finfets

Номер патента: US20240097006A1. Автор: Takashi Ando,Alexander Reznicek,Jingyun Zhang,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2024-03-21.

Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof

Номер патента: US20140264599A1. Автор: Chien-Chung Chen,Yin-Fu Huang,Shyi-Yuan Wu,Ming-Tung Lee,Shin-Chin Lien. Владелец: Macronix International Co Ltd. Дата публикации: 2014-09-18.

Semiconductor device with leakage current guide path and method for fabricating the same

Номер патента: US20230069497A1. Автор: Wei-Zhong Li,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-03-02.

Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof

Номер патента: US8928095B2. Автор: Chien-Chung Chen,Yin-Fu Huang,Shyi-Yuan Wu,Shih-Chin Lien,Ming-Tung Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2015-01-06.

Erase operation for 3d non volatile memory with controllable gate-induced drain leakage current

Номер патента: WO2013158557A1. Автор: Haibo Li,Masaaki Higashitani,Man L. Mui,Xiying Costa. Владелец: SANDISK TECHNOLOGIES, INC.. Дата публикации: 2013-10-24.

Erase operation for 3d non volatile memory with controllable gate-induced drain leakage current

Номер патента: EP2839463A1. Автор: Haibo Li,Masaaki Higashitani,Man L. Mui,Xiying Costa. Владелец: SanDisk Technologies LLC. Дата публикации: 2015-02-25.

Multiple transistor architecture for three-dimensional memory arrays

Номер патента: US12119056B2. Автор: Ferdinando Bedeschi. Владелец: Micron Technology Inc. Дата публикации: 2024-10-15.

Three-dimensional memory array and operation scheme

Номер патента: US20140160836A1. Автор: Chung H. Lam,Sangbum Kim. Владелец: International Business Machines Corp. Дата публикации: 2014-06-12.

Neuromorphic computing device with three-dimensional memory

Номер патента: US20230385625A1. Автор: Yih Wang,Chia-En HUANG,Wen-Chang Cheng,Chieh Lee,Yi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Redundant array of independent NAND for a three-dimensional memory array

Номер патента: US11797383B2. Автор: Jung Sheng Hoei,Peter Feeley,Kishore K. Muchherla,Sampath K. Ratnam,Sivagnanam Parthasarathy,Renato C. Padilla. Владелец: Micron Technology Inc. Дата публикации: 2023-10-24.

Methods and devices to generate gate induced drain leakage current sink or source path for switch fets

Номер патента: US20220038099A1. Автор: Alper Genc. Владелец: PSemi Corp. Дата публикации: 2022-02-03.

Three-dimensional memory and control method thereof

Номер патента: US11864379B2. Автор: LEI Jin,Jianquan Jia,Yali SONG,XiangNan Zhao,Yuanyuan MIN,Xuezhun Xie. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-02.

Structures for word line multiplexing in three-dimensional memory arrays

Номер патента: US20240071465A1. Автор: Fatma Arzum Simsek-Ege,Richard E. Fackenthal,Mingdong Cui. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Circuit to reduce gate induced drain leakage

Номер патента: EP4395175A1. Автор: Saurabh Goyal,Krishna Thakur. Владелец: NXP BV. Дата публикации: 2024-07-03.

Circuit to reduce gate induced drain leakage

Номер патента: US20240213978A1. Автор: Saurabh Goyal,Krishna Thakur. Владелец: NXP BV. Дата публикации: 2024-06-27.

Circuit to reduce gate induced drain leakage

Номер патента: US12113520B2. Автор: Saurabh Goyal,Krishna Thakur. Владелец: NXP BV. Дата публикации: 2024-10-08.

Analog switch having reduced gate-induced drain leakage

Номер патента: EP3272011A1. Автор: John K. Jennings,Ionut C. CICAL,Chandrika Durbha. Владелец: Xilinx Inc. Дата публикации: 2018-01-24.

Three-dimensional memory devices with drain select gate cut and methods for forming and operating the same

Номер патента: US12058857B2. Автор: Lichuan Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-08-06.

Three-dimensional memory device and method for enhanced page register reset

Номер патента: US11983439B2. Автор: Xiang Ming ZHI,Augustus TSAI. Владелец: Yangtze Memory Technologies Inc. Дата публикации: 2024-05-14.

Three-dimensional memory device and method for enhanced page register reset

Номер патента: US20240134573A1. Автор: Xiang Ming ZHI,Augustus TSAI. Владелец: Yangtze Memory Technologies Inc. Дата публикации: 2024-04-25.

Three dimensional memory device including memory cells with resistance change layers

Номер патента: US09508430B2. Автор: Kenichi Murooka. Владелец: Toshiba Corp. Дата публикации: 2016-11-29.

Three-dimensional memory device

Номер патента: EP4428861A1. Автор: Changyeon Yu,Pansuk Kwak,Sungun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-11.

Three-dimensional memory device

Номер патента: US20240306394A1. Автор: Changyeon Yu,Pansuk Kwak,Sungun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-12.

Input/output reference voltage training method in three-dimensional memory devices

Номер патента: US20240079054A1. Автор: Yan Lu,Xiang FU,Ling Ding,Shiyang Yang,Chunfei Deng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-07.

Input/output reference voltage training method in three-dimensional memory devices

Номер патента: EP4332967A1. Автор: Yan Lu,Xiang FU,Ling Ding,Shiyang Yang,Chunfei Deng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-06.

Memory devices supporting enhanced gate-induced drain leakage (gidl) erase operation

Номер патента: US20240194269A1. Автор: Sang Soo Park,Yohan Lee,Jin-Young Chun,Byungsoo Kim,Bongsoon LIM,Hyunggon KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-13.

Neighbor bit line coupling enhanced gate-induced drain leakage erase for memory apparatus with on-pitch semi-circle drain side select gate technology

Номер патента: US11881266B2. Автор: Xiang Yang,Ohwon KWON,Kou Tei. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-23.

Design structure for transforming an input voltage to obtain linearity between input and output functions and system and method thereof

Номер патента: US20090243733A1. Автор: Wagdi W. Abadeer,John A. Fifield,Stephen D. Wyatt. Владелец: Individual. Дата публикации: 2009-10-01.

Record carrier with data structure for controlling reproduction of video data of several reproduction channels recorded on aforementioned carrier and methods and devices for recording and reproduction

Номер патента: RU2313139C2. Автор: Бён Джин КИМ,Ган Су СО,Сон Хён ЫМ. Владелец: Эл Джи Электроникс Инк.. Дата публикации: 2007-12-20.

Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same

Номер патента: US20210265380A1. Автор: Shinsuke YADA,Tomoyuki OBU. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-08-26.

THREE-DIMENSIONAL MEMORY DEVICES CONTAINING STRUCTURES FOR CONTROLLING GATE-INDUCED DRAIN LEAKAGE CURRENT AND METHOD OF MAKING THE SAME

Номер патента: US20210265380A1. Автор: YADA Shinsuke,OBU Tomoyuki. Владелец: . Дата публикации: 2021-08-26.

Three-dimensional flat nand memory device having curved memory elements and methods of making the same

Номер патента: US20200286915A1. Автор: Yanli Zhang,Masatoshi Nishikawa,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-10.

Three-dimensional memory device containing inverted staircase and method of making the same

Номер патента: US20240260268A1. Автор: Yoshitaka Otsu,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Three-dimensional memory device containing inverted staircase and method of making the same

Номер патента: WO2024163028A1. Автор: Yoshitaka Otsu,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-08.

Three-dimensional nor-type memory device and method of making the same

Номер патента: US20200168630A1. Автор: Hanan Borukhov. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-05-28.

Three-dimensional memory device containing integrated contact-and-support assemblies and methods of making the same

Номер патента: WO2024137025A1. Автор: Hiroyuki Ogawa,Tomohiro Kubo,Masato Miyamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

Номер патента: US20230284443A1. Автор: Ryo Yoshimoto,Shinsuke YADA,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-09-07.

Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

Номер патента: US12108597B2. Автор: Ryo Yoshimoto,Shinsuke YADA,Teruo OKINA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-01.

Stacked connections in 3D memory and methods of making the same

Номер патента: US11765898B2. Автор: Jun Liu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-19.

Cavity-disrupting backside trench fill structures for a three-dimensional memory device and method of making the same

Номер патента: US20200227318A1. Автор: Motoki KAWASAKI,Toshiyuki Sega. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-16.

Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same

Номер патента: US20210358931A1. Автор: Yanli Zhang,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Seung-Yeul Yang,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-11-18.

Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereof

Номер патента: US09799670B2. Автор: Jin Liu,Yanli Zhang,Masatoshi Nishikawa,Chun GE. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-24.

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING STRUCTURES FOR ENHANCING GATE-INDUCED DRAIN LEAKAGE CURRENT AND METHODS OF FORMING THE SAME

Номер патента: US20210159169A1. Автор: Zhang Peng,Dutta Deepanshu,Zhao Dengtao,Zhang Zhiping. Владелец: . Дата публикации: 2021-05-27.

Three-dimensional memory device with vertical field effect transistors and method of making thereof

Номер патента: US20220068966A1. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-03-03.

Memory device containing cobalt silicide control gate electrodes and method of making thereof

Номер патента: US09842907B2. Автор: Zhenyu Lu,Raghuveer S. Makala,Rahul Sharangpani,Sateesh KOKA,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-12.

Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same

Номер патента: US20210391351A1. Автор: Akira Inoue,Masayuki Hiroi,Takuma Takimoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-16.

Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors and method for programming the same

Номер патента: US09595568B2. Автор: Teruyuki Mine. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-03-14.

Semiconductor Structure And Method of Making The Same

Номер патента: US20240234202A1. Автор: Jian Yang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-11.

Three-dimensional memory device and method of making thereof using ion implanted etch stop layer on a sacrificial fill material

Номер патента: US20240371761A1. Автор: Bing Zhou,Raghuveer S. Makala,Senaka Kanakamedala. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-11-07.

Three-dimensional flat inverse nand memory device and method of making the same

Номер патента: WO2019139672A1. Автор: James Kai,Yingda Dong,Yangyin Chen. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-07-18.

Three-dimensional memory arrays, and methods of forming the same

Номер патента: US20210351234A1. Автор: LEI Wei,Karthik Sarpatwari,Fabio Pellizzer,Nevil N. Gajera,Lingming Yang. Владелец: Micron Technology Inc. Дата публикации: 2021-11-11.

Three-dimensional memory arrays, and methods of forming the same

Номер патента: EP4147237A1. Автор: LEI Wei,Karthik Sarpatwari,Fabio Pellizzer,Nevil N. Gajera,Lingming Yang. Владелец: Micron Technology Inc. Дата публикации: 2023-03-15.

Three-dimensional memory arrays, and methods of forming the same

Номер патента: WO2021225783A1. Автор: LEI Wei,Karthik Sarpatwari,Fabio Pellizzer,Nevil N. Gajera,Lingming Yang. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-11-11.

Three-dimensional memory device having passive devices at a buried source line level and method of making thereof

Номер патента: US09876031B1. Автор: Hiroyuki Ogawa,Satoshi Shimizu,Yasuo Kasagi,Kento Kitamura. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-23.

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

Номер патента: US09875929B1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Keerti Shukla. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-23.

Three-dimensional flat nand memory device having curved memory elements and methods of making the same

Номер патента: US20200286903A1. Автор: Yanli Zhang,Masatoshi Nishikawa,Zhixin Cui. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-10.

Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

Номер патента: US20240237355A9. Автор: Bing Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Monica TITUS. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Three-dimensional NOR array including vertical word lines and discrete memory elements and methods of manufacture

Номер патента: US12035535B2. Автор: Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-09.

3-dimensional NOR memory array with very fine pitch: device and method

Номер патента: US12052867B2. Автор: Scott Brad Herner,Wu-Yi Henry Chien,Eli Harari. Владелец: Sunrise Memory Corp. Дата публикации: 2024-07-30.

Three-dimensional memory device and method of making thereof using double pitch word line formation

Номер патента: US12046285B2. Автор: Naoki Takeguchi,Masanori Tsutsumi,Tatsuya Hinoue,Seiji Shimabukuro. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-23.

Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same

Номер патента: US20200235123A1. Автор: Akio Nishida,Kenji Sugiura,Yuji Fukano,Mitsuteru Mushiga. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-23.

3-dimensional nor memory array with very fine pitch: device and method

Номер патента: US20240357817A1. Автор: Scott Brad Herner,Wu-Yi Henry Chien,Eli Harari. Владелец: Sunrise Memory Corp. Дата публикации: 2024-10-24.

Three-dimensional memory device containing self-aligned isolation strips and methods for forming the same

Номер патента: US12127406B2. Автор: Takashi Inomata,Takaaki IWAI,Takayuki MAEKURA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-22.

Three-dimensional memory device having passive devices at a buried source line level and method of making thereof

Номер патента: US09991282B1. Автор: Hiroyuki Ogawa,Satoshi Shimizu,Yasuo Kasagi,Kento Kitamura. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-06-05.

Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof

Номер патента: US09929174B1. Автор: Hiroyuki Ogawa,Akihiro Ueda,Fumiaki TOYAMA,Yuki Mizutani,Masaaki Higashitani,Fumitaka Amano,Kota Funayama. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-03-27.

Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same

Номер патента: US20240090217A1. Автор: Teruo OKINA,Kyohei NABESAKA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-03-14.

Three-dimensional memory device containing bond pad-based power supply network for a source line and methods of making the same

Номер патента: WO2020149942A1. Автор: James Kai,Johann Alsmeier,Kwang-Ho Kim,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-23.

Three-dimensional flat nand memory device including wavy word lines and method of making the same

Номер патента: US20200098787A1. Автор: Ryosuke Kaneko. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-03-26.

Three-dimensional p-i-n memory device and method of reading thereof using hole current detection

Номер патента: WO2016182705A1. Автор: Kiyohiko Sakakibara. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-11-17.

Three-dimensional memory device and method of manufacturing the same

Номер патента: US9691879B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2017-06-27.

Three-dimensional memory device including schottky barrier source contacts and methods of forming the same

Номер патента: US20240332180A1. Автор: Teruo OKINA,Kengo Kajiwara. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-10-03.

Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof

Номер патента: US09991277B1. Автор: Raghuveer S. Makala,Masanori Tsutsumi,Kengo Kajiwara. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-06-05.

Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof

Номер патента: US09805805B1. Автор: Yanli Zhang,James Kai,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-31.

Three-dimensional memory device with contact via structures located over support pillar structures and method of making thereof

Номер патента: WO2023163732A1. Автор: Xiang Yin. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material

Номер патента: US09853043B2. Автор: Zhenyu Lu,Daxin Mao,Tong Zhang,Johann Alsmeier,Henry Chien,Wenguang Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-12-26.

Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof

Номер патента: US09748266B1. Автор: Yanli Zhang,Yingda Dong,Liang PANG,Ashish Baraskar,Ching-Huang Lu,Matthias Baenninger. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-29.

Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof

Номер патента: US09748174B1. Автор: Fumitaka Amano. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-29.

Structure and method of operation for improved gate capacity for 3D NOR flash memory

Номер патента: US09589982B1. Автор: Cheng-Hsien Cheng,Chih-Wei Lee,Wen-Pin Lu,Shaw-Hung Ku. Владелец: Macronix International Co Ltd. Дата публикации: 2017-03-07.

Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the same

Номер патента: US20200402992A1. Автор: Yoshitaka Otsu,Naoto HOJO,Kei NOZAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-12-24.

Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the same

Номер патента: US20200402905A1. Автор: Masanori Terahara,Eiji Hayashi,Hirofumi TOKITA,Yoshitaka Otsu,Naoto HOJO,Kei NOZAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-12-24.

Method of making a three-dimensional memory device using dual water vapor flow oxidation and apparatus for performing the same

Номер патента: US20240121961A1. Автор: Shin Koyama,Eisuke Takii,Hiraku Hashimoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-04-11.

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

Номер патента: EP3420596A1. Автор: Hajime Kimura,Michiaki Sano,Masanori Tsutsumi,Shuji Minagawa,Seiji Shimabukuro. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-02.

Three-dimensional memory apparatuses and methods of use

Номер патента: US09978810B2. Автор: Fabio Pellizzer. Владелец: Micron Technology Inc. Дата публикации: 2018-05-22.

Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof

Номер патента: US09754958B2. Автор: Raghuveer S. Makala,Jayavel Pachamuthu,Sateesh KOKA,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-09-05.

Three-dimensional memory device with aluminum-containing etch stop layer for backside contact structure and method of making thereof

Номер патента: US09728547B1. Автор: Takeshi Kawamura,Hiroshi Kariya,Takuro Maede,Shingo OHSAKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-08-08.

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

Номер патента: US09576967B1. Автор: Hajime Kimura,Michiaki Sano,Masanori Tsutsumi,Shuji Minagawa,Seiji Shimabukuro. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-02-21.

Three-dimensional memory structure having self-aligned drain regions and methods of making thereof

Номер патента: US09543320B2. Автор: Yingda Dong,Liang PANG,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-01-10.

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING STRUCTURALLY REINFORCED PEDESTAL CHANNEL PORTIONS AND METHOD OF MAKING THE SAME

Номер патента: US20190096904A1. Автор: Sato Junichi,NOGUCHI Masato. Владелец: . Дата публикации: 2019-03-28.

Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer

Номер патента: US09478558B2. Автор: Yanli Zhang,Raghuveer S. Makala,Rahul Sharangpani,George Matamis,Senaka Kanakamedala,Sateesh KOKA,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-10-25.

Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same

Номер патента: US20200203364A1. Автор: Yuki KASAI,Hironori Matsuoka,Yuji TOTOKI,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-06-25.

Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same

Номер патента: US10957705B2. Автор: Yuki KASAI,Hironori Matsuoka,Yuji TOTOKI,Shigehisa Inoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-03-23.

Three-dimensional memory device with vertical field effect transistors and method of making thereof

Номер патента: US11569215B2. Автор: Peter Rabkin,Kwang-Ho Kim. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-01-31.

Stacked connections in 3D memory and methods of making the same

Номер патента: US11910602B2. Автор: Jun Liu,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-20.

Three-dimensional memory device with a silicon carbon nitride interfacial layer in a charge storage layer and methods of making the same

Номер патента: US20200287007A1. Автор: Yuki KASAI. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-10.

Photosensitized composite material, three-dimensional memory material and recording medium, optical power limiting material and element, photocuring material and stereolithography system, and fluorescent material for multiphoton fluorescence microscope and multiphoton fluorescence microscope

Номер патента: EP2057504A1. Автор: Masaomi Sasaki,Tsutomu Sato,Tatsuya Tomura,Takeshi Miki,Mikiko Takada. Владелец: Ricoh Co Ltd. Дата публикации: 2009-05-13.

Photosensitized composite material, three-dimensional memory material and recording medium, optical power limiting material and element, and photocuring material and stereolithography system, and fluorescent material for multiphoton fluorescence microscope and multiphoton fluorescence microscope

Номер патента: US20090323508A1. Автор: Masaomi Sasaki,Tsutomu Sato,Tatsuya Tomura,Takeshi Miki,Mikiko Takada. Владелец: Ricoh Co Ltd. Дата публикации: 2009-12-31.

Flash memory device revising program voltage, three-dimensional memory device, memory system including the memory device, and methods of programming the memory device

Номер патента: US09779833B2. Автор: Sang-Hyun Joo,Jae-Woo Im. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Flash memory storage apparatus and a biasing method thereof, which can reduce a gate induced drain leakage (gidl) and improve reliability of memory cells

Номер патента: US20220246194A1. Автор: Chih-Yuan Wang,Chien-Hung Lien. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2022-08-04.

Leakage current calculation device and method for calculating leakage current

Номер патента: US09465065B2. Автор: Kenya Matsushita,Masakatsu Sawada. Владелец: Tanashin Denki Co Ltd. Дата публикации: 2016-10-11.

Method and device for control over manufacturing mode of pipe manufactured by electric welding by resistance method, and manufacturing method of such pipe

Номер патента: RU2682511C1. Автор: Такатоси ОКАБЕ,Тосифуми КОДАМА,Суити САТО. Владелец: ДжФЕ СТИЛ КОРПОРЕЙШН. Дата публикации: 2019-03-19.

Flash memory storage apparatus and a biasing method thereof, which can reduce a gate induced drain leakage (gidl) and improve reliability of memory cells

Номер патента: US20220366963A1. Автор: Chih-Yuan Wang,Chien-Hung Lien. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2022-11-17.

System for controlling at least one industrial object having an arrangement responsive to a stimulus and method of implementing the same

Номер патента: WO2023209701A1. Автор: Joshua ULMER. Владелец: Emi Integrated Systems Ltd.. Дата публикации: 2023-11-02.

Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming

Номер патента: US20130223125A1. Автор: Jing Li,Chung H. Lam,John K. DeBrosse,Kailash Gopalakrishnan. Владелец: International Business Machines Corp. Дата публикации: 2013-08-29.

Downhole device for control of consumption of fluid flow from formation into borehole of well (versions) and method for determination of position of device for consumption control inside well (versions)

Номер патента: RU2383729C2. Автор: Гай ВАЧОН. Владелец: Бейкер Хьюз Инкорпорейтед. Дата публикации: 2010-03-10.

Apparatus for controlling digital device based on touch input interface capable of visual input feedback and method for the same

Номер патента: US20090090568A1. Автор: Dong Jin Min. Владелец: Melfas Inc. Дата публикации: 2009-04-09.

Device for control of density of emulsion explosive substance or other liquids in vertical wells and method of monitoring density

Номер патента: RU2698737C1. Автор: Павел Владимирович Комиссаров,Борис Сергеевич Ермолаев,Светлана Сергеевна Басакина. Владелец: Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр химической физики им. Н.Н. Семенова Российской академии наук (ФИЦ ХФ РАН). Дата публикации: 2019-08-29.

Data carrier having reserved area for controlling defects and data concerning defects control, method for marking about reserved area and method for controlling defects

Номер патента: RU2253911C2. Автор: Дзунг-ван КО. Владелец: Самсунг Электроникс Ко., Лтд. Дата публикации: 2005-06-10.

Method and apparatus for controlling output of pressure setting signal to automatically control steam bypass control system, and method and apparatus for automatically controlling steam bypass control system by using the pressure setting signal

Номер патента: US20130152588A1. Автор: Myung Jun Song,Jong Joo Sohn,Ju Han Lee,See Chae JEONG,Chan Eok PARK. Владелец: Kepco Engineering and Construction Co Inc. Дата публикации: 2013-06-20.

3d memory device and programming method thereof

Номер патента: US20230352106A1. Автор: Amedeo IANTORNO. Владелец: SK hynix Inc. Дата публикации: 2023-11-02.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

Номер патента: WO2024205709A1. Автор: Takaaki IWAI,Shinsuke YADA,Teruo OKINA,Yuki FUKUSHIGE. Владелец: Sandisk Technologies Llc.. Дата публикации: 2024-10-03.

MEDICAL MATERIAL FOR IN VIVO IMPLANTATION CONTAINING SOFTENING AGENT AND/OR MOISTURIZING AGENT, METHOD FOR CONTROLLING CONTENT OF SOFTENING AGENT AND/OR MOISTURIZING AGENT IN THE MEDICAL MATERIAL, AND METHOD FOR PRODUCING THE MEDICAL MATERIAL FOR IN VIVO IMPLANTATION

Номер патента: US20120004673A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

Номер патента: US20120001150A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

APPARATUSES AND METHODS TO REDUCE POWER CONSUMPTION IN DIGITAL CIRCUITS

Номер патента: US20120001682A1. Автор: VENKATA HARISH N.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same

Вам могут быть интересны следующие патенты

Главная

Проекты и услуги

Контакты