Multiwavelength nanowire laser array
Номер патента: EP4158740A1
Опубликовано: 05-04-2023
Автор(ы): Geoffrey Charles Gardner, Raymond Leonard Kallaher, Sergei V. Gronin
Принадлежит: Microsoft Technology Licensing LLC
Опубликовано: 05-04-2023
Автор(ы): Geoffrey Charles Gardner, Raymond Leonard Kallaher, Sergei V. Gronin
Принадлежит: Microsoft Technology Licensing LLC
Реферат: A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.
Multiwavelength nanowire laser array
Номер патента: WO2021242343A1. Автор: Sergei V. Gronin,Geoffrey Charles Gardner,Raymond Leonard Kallaher. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2021-12-02.