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Semiconductor device and manufacturing method of semiconductor device

Номер патента: US12096703B2
Опубликовано: 17-09-2024
Автор(ы): Qi Xiang, Taiwei CHIU, Tingying SHEN
Принадлежит: Xiamen Industrial Technology Research Institute Co Ltd
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Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

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Method of manufacturing a semiconductor device

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Method of forming trench semiconductor device having multiple trench depths

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Method of severing a semiconductor device composite

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Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

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Method of forming a semiconductor device

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Method of forming a semiconductor device and structure therefor

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Semiconductor device and method of producing a semiconductor device

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Semiconductor device and method of manufacturing a semiconductor device

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Semiconductor devices with various line widths and method of manufacturing the same

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Methods of forming packaged semiconductor devices and leadframes for semiconductor device packages

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Compound semiconductor device and method of manufacturing compound semiconductor device

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Method of monitoring a semiconductor device fabrication process and method of fabricating a semiconductor device using the same

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Methods of Manufacturing a Semiconductor Device by Forming a Separation Trench

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device using SEG and a transitory substrate

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Method of forming a semiconductor device by activating regions with a laser light

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Method of manufacturing a semiconductor device with a multilayer wiring

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Method of manufacturing a semiconductor device, in which a double layer-consisting of poly si and a silicide-present on a layer of silicon oxide is etched in a plasma

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