Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof.

Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof

Номер патента: US09660085B2
Опубликовано: 23-05-2017
Автор(ы): Benjamin Chu-Kung, Han Wui Then, Marko Radosavljevic, Ravi Pillarisetty, Robert S. Chau, Sanaz K. Gardner, Sansaptak DASGUPTA, Seung Hoon Hoon SUNG
Принадлежит: Intel Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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