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  • High-voltage FinFET device having LDMOS structure and method for manufacturing the same

High-voltage FinFET device having LDMOS structure and method for manufacturing the same

Номер патента: US09640663B2
Опубликовано: 02-05-2017
Автор(ы): Tai-Ju Chen, Te-Chih Chen, Yi-Han Ye
Принадлежит: United Microelectronics Corp
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