Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • Anisotropic conductive film and semiconductor device bonded by the same

Anisotropic conductive film and semiconductor device bonded by the same

Номер патента: US09540549B2
Опубликовано: 10-01-2017
Автор(ы): Arum Yu, Dong Seon Uh, Hyun Min Choi, Joon Mo Seo, Kyoung Soo Park, Kyung Il SUL, Nam Ju Kim, Young Woo Park
Принадлежит: Cheil Industries Inc
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Integrated dicing die bonding sheet and method for producing semiconductor device

Номер патента: US20240087941A1. Автор: Manabu Sutoh,Eiji Kitaura,Nohno TODA. Владелец: Dow Toray Co Ltd. Дата публикации: 2024-03-14.

Adhesive, die attach film and preparation method therefor

Номер патента: US20230265322A1. Автор: Yi Wang,TING Li,DE Wu,Shuhang Liao,Junxing Su. Владелец: Wuhan Choice Technology Co ltd. Дата публикации: 2023-08-24.

Adhesive, die attach film and preparation method therefor

Номер патента: US11767450B2. Автор: Yi Wang,TING Li,DE Wu,Shuhang Liao,Junxing Su. Владелец: Wuhan Choice Technology Co ltd. Дата публикации: 2023-09-26.

Semiconductor device connected by anisotropic conductive film

Номер патента: US09865558B2. Автор: Ji Yeon Kim,Jae Sun Han,Young Woo Park,Kyoung Ku Kang,Kyoung Soo Park,Kwang Jin Jung,Ja Young Hwang,Kyoung Hun Shin,Byeong Geun SON,Young Ju Shin. Владелец: Samsung SDI Co Ltd. Дата публикации: 2018-01-09.

Resin composition, resin film, method for producing resin film, method for producing semiconductor device, and semiconductor device

Номер патента: US20170283581A1. Автор: Michihiro Sugo,Kazunori Kondo,Yoichiro Ichioka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-10-05.

Semiconductor-bonding resin composition, semiconductor-bonding sheet, and semiconductor device using semiconductor-bonding sheet

Номер патента: US20190264071A1. Автор: Masakazu Fujiwara,Hiroshi Fukukawa. Владелец: Kyocera Corp. Дата публикации: 2019-08-29.

Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film

Номер патента: US09589696B2. Автор: Jae Sun Han,Hyun Hee Namkung,Dong Seon Uh,Hyun Wook Kim,Jin Young SEO,Kwang Jin Jung. Владелец: Cheil Industries Inc. Дата публикации: 2017-03-07.

Semiconductor device connected by anisotropic conductive film

Номер патента: US09657196B2. Автор: Ji Yeon Kim,Jae Sun Han,Young Woo Park,Kyoung Ku Kang,Kyoung Soo Park,Kwang Jin Jung,Ja Young Hwang,Kyoung Hun Shin,Byeong Geun SON,Young Ju Shin. Владелец: Samsung SDI Co Ltd. Дата публикации: 2017-05-23.

Thermoplastic resin composition for semiconductor, adhesion film, lead frame, and semiconductor device using the same, and method of producing semiconductor device

Номер патента: MY140876A. Автор: Tomohiro Nagoya,Yoshiyuki Tanabe,Toshiyasu Kawai,Naoko Tomoda,Kiyohide Tateoka. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2010-01-29.

Non-conductive film sheet and semiconductor package including the same

Номер патента: US12062633B2. Автор: Yeongseok Kim,Joungphil LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device

Номер патента: US09793103B2. Автор: Jang Soon Kim,Hyun Jee Yoo,Hyo Soon Park,Hyo Sook Joo,Jong Wan Hong,Dong Han Kho. Владелец: LG Chem Ltd. Дата публикации: 2017-10-17.

Epoxy-based composition, adhesive film, dicing die-bonding film and semiconductor device

Номер патента: US09659763B2. Автор: Jang Soon Kim,Hyun Jee Yoo,Hyo Soon Park,Hyo Sook Joo,Jong Wan Hong,Dong Han Kho. Владелец: LG Chem Ltd. Дата публикации: 2017-05-23.

Anisotropic conductive film and production method of the same

Номер патента: US20170140850A1. Автор: Kumiko Kitamura. Владелец: Dexerials Corp. Дата публикации: 2017-05-18.

Anisotropic conductive film, composition for the same, and apparatus including the same

Номер патента: US20140034882A1. Автор: Jin Kyu Kim,Dong Seon Uh,Jang Hyun Cho,Jin Seong Park,Youn Jo KO,Sang Sik Bae. Владелец: Individual. Дата публикации: 2014-02-06.

Anisotropic conductive film and connection structure

Номер патента: US09953947B2. Автор: Reiji Tsukao. Владелец: Dexerials Corp. Дата публикации: 2018-04-24.

Conductive adhesive, anisotropic conductive film, and electronic device using same

Номер патента: US09701874B2. Автор: Hiroshi Uchida,Yoshitaka Ishibashi. Владелец: Showa Denko KK. Дата публикации: 2017-07-11.

Anisotropic conductive film, connection structure and method of producing the same

Номер патента: US09515042B2. Автор: Kouichi Sato,Yasushi Akutsu,Shigeyuki Yoshizawa. Владелец: Dexerials Corp. Дата публикации: 2016-12-06.

Method for manufacturing anisotropic conductive film, and anisotropic conductive film

Номер патента: US12014840B2. Автор: Junichi Nishimura. Владелец: Dexerials Corp. Дата публикации: 2024-06-18.

Anisotropic conductive adhesive film and electronic device

Номер патента: US09796884B2. Автор: Wei He,Xinghua Li,Seung Yik Park,Junping Bao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-10-24.

Anisotropic conductive film

Номер патента: US11794444B2. Автор: Yasushi Akutsu,Reiji Tsukao. Владелец: Dexerials Corp. Дата публикации: 2023-10-24.

Anisotropic conductive film and method of producing the same

Номер патента: US11784154B2. Автор: Seiichiro Shinohara. Владелец: Dexerials Corp. Дата публикации: 2023-10-10.

Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film

Номер патента: US09534154B2. Автор: Jae Sun Han,Hyun Hee Namkung,Dong Seon Uh,Hyun Wook Kim,Jin Young SEO,Kwang Jin Jung,Kyung Il SUL. Владелец: Cheil Industries Inc. Дата публикации: 2017-01-03.

Alignment method, method for connecting electronic component, method for manufacturing connection body, connection body and anisotropic conductive film

Номер патента: US20190206831A1. Автор: Yasushi Akutsu. Владелец: Dexerials Corp. Дата публикации: 2019-07-04.

Anisotropic conductive film and production method of the same

Номер патента: US20170107406A1. Автор: Yuta Araki,Tomoyuki Ishimatsu. Владелец: Dexerials Corp. Дата публикации: 2017-04-20.

Anisotropic conductive film and production method of the same

Номер патента: US10442958B2. Автор: Yuta Araki,Tomoyuki Ishimatsu. Владелец: Dexerials Corp. Дата публикации: 2019-10-15.

Anisotropic conductive film, method for producing anisotropic conductive film, method for producing connection body, and connection method

Номер патента: US09960139B2. Автор: Kouichi Sato,Yasushi Akutsu. Владелец: Dexerials Corp. Дата публикации: 2018-05-01.

Kind of light-heat dual curing anisotropic conductive adhesive anisotropic conductive film and their preparation methods

Номер патента: US20140193599A1. Автор: Ren-Liang Xiao,Chang-Hou Zhao,Cheng-Cui Liu,Xian-Fei Wan,Chang-Wu Yang,Hua-Guo Yin. Владелец: SHENZHEN FISHER INDUSTRIAL CO LTD. Дата публикации: 2014-07-10.

Anisotropic conductive film and connected structure

Номер патента: US11923335B2. Автор: Seiichiro Shinohara. Владелец: Dexerials Corp. Дата публикации: 2024-03-05.

Anisotropic conductive film and method of making conductive connection

Номер патента: EP2784141A3. Автор: Takeaki Kawashima. Владелец: Fujifilm Corp. Дата публикации: 2014-12-03.

Anisotropic conductive film including oblique region having lower curing ratio

Номер патента: US09997486B2. Автор: Yasushi Akutsu,Reiji Tsukao. Владелец: Dexerials Corp. Дата публикации: 2018-06-12.

Anisotropic conductive film and connection structure

Номер патента: US20170162529A1. Автор: Yasushi Akutsu,Seiichiro Shinohara. Владелец: Dexerials Corp. Дата публикации: 2017-06-08.

Anisotropic conductive adhesive, method of producing the same, connection structure and producing method thereof

Номер патента: US20130087373A1. Автор: Jun Sakamoto,Misao Konishi. Владелец: Dexerials Corp. Дата публикации: 2013-04-11.

Insulated conductive particles and anisotropic conductive adhesive film using the same

Номер патента: US7566494B2. Автор: Jae Ho Lee,Jung Bae Jun,Jin Gyu Park. Владелец: Cheil Industries Inc. Дата публикации: 2009-07-28.

Anisotropically conductive moisture barrier films and electro-optic assemblies containing the same

Номер патента: EP3899640A1. Автор: Darwin Scott Bull. Владелец: E Ink Corp. Дата публикации: 2021-10-27.

Anisotropically conductive moisture barrier films and electro-optic assemblies containing the same

Номер патента: US20200192176A1. Автор: Darwin Scott Bull. Владелец: E Ink Corp. Дата публикации: 2020-06-18.

Anisotropically conductive moisture barrier films and electro-optic assemblies containing the same

Номер патента: US11782322B2. Автор: Darwin Scott Bull. Владелец: E Ink Corp. Дата публикации: 2023-10-10.

Filling film and method of manufacturing organic light-emitting display apparatus by using the same

Номер патента: US09825227B2. Автор: Jeong-Su Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-11-21.

Retardation film, and organic el display device and liquid crystal display device using the same

Номер патента: US20120302713A1. Автор: Yuji Takahashi,Takeshi Koike,Shinichi Komatsu,Hisashi Sone,Tetsuya Uesaka. Владелец: JX Nippon Oil and Energy Corp. Дата публикации: 2012-11-29.

Retardation film, and organic EL display device and liquid crystal display device using the same

Номер патента: US8629226B2. Автор: Yuji Takahashi,Takeshi Koike,Shinichi Komatsu,Hisashi Sone,Tetsuya Uesaka. Владелец: JX Nippon Oil and Energy Corp. Дата публикации: 2014-01-14.

Anisotropic conductive film, connection method, and assembly

Номер патента: US09723715B2. Автор: Kazuhisa Aoki,Yasunobu Yamada,Naoya Uesawa. Владелец: Dexerials Corp. Дата публикации: 2017-08-01.

Anisotropic conductive film

Номер патента: US20190027267A1. Автор: Shinichi Hayashi,Kenji Tokuhisa,Etsuko YAMAGUCHI. Владелец: Dexerials Corp. Дата публикации: 2019-01-24.

Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same

Номер патента: KR100822086B1. Автор: 야노야스히로,노무라요시히로,마츠우라히데카즈,모리시타요시이,사카타토이치,니시자와히로시,다나카토시아키,야스다마사아키,카네다아이조. Владелец: 히다치 가세고교 가부시끼가이샤. Дата публикации: 2008-04-15.

Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same

Номер патента: US20060180908A1. Автор: Hiroshi Nishizawa,Hidekazu Matsuura,Aizou Kaneda,Yoshihiro Nomura,Yasuhiro Yano,Masaaki Yasuda,Yoshii Morishita,Toshiaki Tanaka,Touichi Sakata. Владелец: Individual. Дата публикации: 2006-08-17.

Semiconductor device, thermosetting resin composition used in manufacturing the same, and dicing-die bonding integrated tape

Номер патента: CN112204730A. Автор: 山本和弘. Владелец: Showa Denko KK. Дата публикации: 2021-01-08.

Maleimide-based compound, and tautomer or stereoisomer thereof, dye for photoelectric conversion, and semiconductor electrode, photoelectric conversion element and photoelectrochemical cell using the same

Номер патента: US20130056690A1. Автор: Kentaro Nakahara,Shin Nakamura,Katsumi Maeda. Владелец: NEC Corp. Дата публикации: 2013-03-07.

Epoxy resin composition for encapsulating a semiconductor device and semiconductor device prepared using the same

Номер патента: US09870971B2. Автор: Seung Han,Jin Woo Choi,Min Gyum KIM,Ki Hyeok KWON,Joo Young Chung,Jin Min Cheon. Владелец: Samsung SDI Co Ltd. Дата публикации: 2018-01-16.

Non-conductive film comprising zinc particle, Non-conductive paste comprising zinc particle, semiconductor package comprising the same, and method of manufacturing the same

Номер патента: KR102165264B1. Автор: 조태제,강운병,백경욱,최용원,지영근,신지원,서선경. Владелец: 삼성전자 주식회사. Дата публикации: 2020-10-13.

Display device connected by anisotropic conductive film

Номер патента: US09899122B2. Автор: Hyun Joo Seo. Владелец: Samsung SDI Co Ltd. Дата публикации: 2018-02-20.

Anisotropic conductive film

Номер патента: US20020130302A1. Автор: Yuji Hotta,Sadahito Misumi,Miho Yamaguchi. Владелец: Nitto Denko Corp. Дата публикации: 2002-09-19.

Anisotropic conductive adhesive composition, film and semiconductor device

Номер патента: CN103725204A. Автор: 朴度炫,徐贤柱,申颍株,金奎峰,申炅勋,林佑俊. Владелец: Cheil Industries Inc. Дата публикации: 2014-04-16.

Anisotropically conductive moisture barrier films and electro-optic assemblies containing the same

Номер патента: US20200192176A1. Автор: Darwin Scott Bull. Владелец: E Ink Corp. Дата публикации: 2020-06-18.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Номер патента: US11749522B2. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2023-09-05.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon containing thin film using the same

Номер патента: US20220139704A1. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2022-05-05.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Номер патента: US20200111664A1. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2020-04-09.

Method for forming graphene barrier layer for semiconductor device and contact structure formed by the same

Номер патента: US20230081962A1. Автор: Won Jun Yoon,Jee Hye Park,Dong Woo Kim,Tae Sung Kim,Jin Ho Jeon,Hong Ki PARK,Woo Hoon SUN,Keon Jung LEE. Владелец: Wonik Ips Co Ltd. Дата публикации: 2023-03-16.

Semiconductor device and method and system for fabricating the same

Номер патента: US20040155279A1. Автор: Shinichiro Hayashi,Yoshihisa Nagano,Yuji Judai,Toshie Kutsunai. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2004-08-12.

Semiconductor device and apparatus and method for manufacturing the same

Номер патента: US6333259B1. Автор: Kazuyoshi Maekawa,Junko Izumitani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-12-25.

Anisotropic conductive adhesive, method for forming nana conductive pattern and method for packaging electronic parts using the same

Номер патента: KR101096677B1. Автор: 김종민,신영의. Владелец: 중앙대학교 산학협력단. Дата публикации: 2011-12-22.

Composition for use in high heat-conductive film-like adhesive, high heat-conductive film-like adhesive, and semiconductor package using the high heat-conductive film-like adhesive and method for fabricating the same

Номер патента: TW201239056A. Автор: Hiroyuki Yano,Akira Tokumitsu,Minoru Morita,Noriyuki Kirikae. Владелец: Nippon Steel Chemical Co. Дата публикации: 2012-10-01.

Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same

Номер патента: KR100640600B1. Автор: 홍창기,이재동,최재광. Владелец: 삼성전자주식회사. Дата публикации: 2006-11-01.

Slurry compositions and favrication method of semiconductor device including chemical mechanical polishing process using the same

Номер патента: KR100684877B1. Автор: 홍창기,이재동,김성준,최재광. Владелец: 삼성전자주식회사. Дата публикации: 2007-02-20.

Etching solution composition for a silicon nitride layer and method for manufacturing a semiconductor device and a TFT array substrate using the same

Номер патента: KR102415960B1. Автор: 최한영,양진석,권기진. Владелец: 동우 화인켐 주식회사. Дата публикации: 2022-07-01.

Multi-layer adhesive film for semiconductor device and dicing die bonding film comprising the same

Номер патента: TW201033320A. Автор: Sang-Jin Kim,Chul Jeong,Ki-Tae Song,Han-Nim Choi,Su-Mi Im,Yong-Woo Hong,Baek-Soung Park. Владелец: Cheil Ind Inc. Дата публикации: 2010-09-16.

Barrier film and laminated material, container for wrapping and image display medium using the same, and manufacturing method for barrier film

Номер патента: US8475929B2. Автор: Yoshihiro Kishimoto,Minoru Komada. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2013-07-02.

Anisotropic conductive film, display panel, and manufacturing method thereof

Номер патента: US20210340333A1. Автор: Yuan Mei,Jincheng Li,Haoxu WU. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2021-11-04.

Paint for forming insulating film, and plasma display panel using the paint and method of manufacturing the same

Номер патента: US20020063527A1. Автор: Tomohiro Hayashi,Tatsuo Mifune. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-05-30.

Maleimide-based compound, and tautomer or stereoisomer thereof, dye for photoelectric conversion, and semiconductor electrode, photoelectric conversion element and photoelectrochemical cell using the same

Номер патента: US20130056690A1. Автор: Kentaro Nakahara,Shin Nakamura,Katsumi Maeda. Владелец: NEC Corp. Дата публикации: 2013-03-07.

Semiconductor device connected by anisotropic conductive film

Номер патента: US09666552B2. Автор: Hyun Joo Seo,Kyoung Hun Shin,Kyu Bong Kim,Young Ju Shin,Woo Jun LIM. Владелец: Cheil Industries Inc. Дата публикации: 2017-05-30.

Anisotropic conductive film

Номер патента: US20190319003A1. Автор: Takeshi Miyake,Reiji Tsukao,Tatsurou Fukaya. Владелец: Dexerials Corp. Дата публикации: 2019-10-17.

Semiconductor device connected by anisotropic conductive adhesive film

Номер патента: US09437346B2. Автор: Hyun Joo Seo,Kyoung Hun Shin,Kyu Bong Kim,Do Hyun PARK,Young Ju Shin,Woo Jun LIM. Владелец: Cheil Industries Inc. Дата публикации: 2016-09-06.

Display device connected by anisotropic conductive film

Номер патента: US20160148716A1. Автор: Soon Young Kwon,Hyun Joo Seo,Kyoung Ku Kang,Youn Jo KO,Ie Ju KIM,Se Mi HEO. Владелец: Samsung SDI Co Ltd. Дата публикации: 2016-05-26.

Anisotropic conductive material, connected structure, and production method thereof

Номер патента: US20100103630A1. Автор: Yoshito Tanaka,Jun Yamamoto. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2010-04-29.

Anisotropic conductive material, connected structure, and production method thereof

Номер патента: US8148641B2. Автор: Yoshito Tanaka,Jun Yamamoto. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2012-04-03.

Semiconductor device connected by anisotropic conductive film

Номер патента: US09490229B2. Автор: Ji Yeon Kim,Kyoung Ku Kang,Kyoung Soo Park,Kwang Jin Jung,Ja Young Hwang,Byeong Geun SON,Young Ju Shin. Владелец: Samsung SDI Co Ltd. Дата публикации: 2016-11-08.

Anisotropic conductive film, joined structure and method for producing the joined structure

Номер патента: US20120285603A1. Автор: Tomoyuki Ishimatsu. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2012-11-15.

Semiconductor device connected by anisotropic conductive film

Номер патента: US20140210084A1. Автор: Youn Jo KO,Ie Ju KIM,Hye Su Ki. Владелец: Individual. Дата публикации: 2014-07-31.

Anisotropic conductive flame and flat panel display using the same, and method for manufacturing the same

Номер патента: US20070052903A1. Автор: Yun Kim,Hee Park,Ho Kang,Jong Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-08.

Anisotropic conductive film

Номер патента: US8715833B2. Автор: Yasushi Akutsu,Yasunobu Yamada,Kouichi Miyauchi. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2014-05-06.

Semiconductor device connected by anisotropic conductive film

Номер патента: US20150091192A1. Автор: Ji Yeon Kim,Woo Jung SHIN,Kyoung Ku Kang,Kyoung Soo Park,Kwang Jin Jung,Ja Young Hwang,Young Ju Shin. Владелец: Samsung SDI Co Ltd. Дата публикации: 2015-04-02.

Conductive film laminate and method of fabricating the same

Номер патента: US11912910B2. Автор: Chang Yong Lee,Hyuk Hwan KWON,Sun Kwon AHN. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2024-02-27.

Anisotropic conductive film, joined structure and method for producing the joined structure

Номер патента: US20100065303A1. Автор: Tomoyuki Ishimatsu. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2010-03-18.

Method of producing anisotropic conductive film and anisotropic conductive film

Номер патента: US11787976B2. Автор: Yasushi Akutsu,Seiichiro Shinohara. Владелец: Dexerials Corp. Дата публикации: 2023-10-17.

Anisotropic conductive film

Номер патента: US10424538B2. Автор: Seiichiro Shinohara. Владелец: Dexerials Corp. Дата публикации: 2019-09-24.

Anisotropic conductive film and fabricating method thereof

Номер патента: US20200332155A1. Автор: Hanning YANG. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-10-22.

Multilayered anisotropic conductive adhesive for fine pitch

Номер патента: US20060033213A1. Автор: Jin Hwang,Myung Yim. Владелец: Telephus Inc. Дата публикации: 2006-02-16.

Display panel and display device including the same

Номер патента: US11956899B2. Автор: Joo-Nyung Jang. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-04-09.

Anisotropic conductive structure, lens module and electronic device

Номер патента: US20240292545A1. Автор: Fei-Fan Yu. Владелец: Triple Win Technology Shenzhen Co Ltd. Дата публикации: 2024-08-29.

Semiconductor laminate, semiconductor device, and production method thereof

Номер патента: US09577050B2. Автор: Tetsuya Imamura,Yoshinori Ikeda,Yuka Tomizawa. Владелец: Teijin Ltd. Дата публикации: 2017-02-21.

Conductive film and manufacturing method of conductive film

Номер патента: US20240161940A1. Автор: Takahisa Yamamoto,Kazuhiko Kano,Tomoharu Tokunaga,Ryota Kono,Yasuyuki Hikita,Kouhei Hieda. Владелец: Tokai National Higher Education and Research System NUC. Дата публикации: 2024-05-16.

Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed by the same, and methods of manufacturing the same

Номер патента: KR100738066B1. Автор: 박윤창,최철종. Владелец: 삼성전자주식회사. Дата публикации: 2007-07-12.

Semiconductor device cu wiring and method for manufacturing the same

Номер патента: TW200839878A. Автор: Hirotaka Ito,Takashi Onishi,Masao Mizuno,Mikako Takeda. Владелец: Kobe Steel Ltd. Дата публикации: 2008-10-01.

Process for fabricating a semiconductor device

Номер патента: US5961791A. Автор: Hak-Lay Chuang,Larry E. Frisa,Laura Pressley. Владелец: Motorola Inc. Дата публикации: 1999-10-05.

Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same

Номер патента: KR100915231B1. Автор: 정관욱,양성훈,홍완식. Владелец: 삼성전자주식회사. Дата публикации: 2009-09-02.

Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same

Номер патента: US20030213966A1. Автор: Sung-Hoon Yang,Kwan-Wook Jung,Wan-Shick Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-11-20.

Equipment for manufacturing semiconductor device and wafer loading/unloading method used the same

Номер патента: KR101420285B1. Автор: 신진호,김중현,박준식,제나디 이바노브. Владелец: 삼성전자주식회사. Дата публикации: 2014-07-17.

Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same

Номер патента: US7179569B2. Автор: Takeshi Shibata,Kazuyoshi Sugihara,Kyoichi Suguro,Kouji Matsuo. Владелец: Toshiba Corp. Дата публикации: 2007-02-20.

Film deposition apparatus, film deposition method, semiconductor device fabrication apparatus, susceptor for use in the same, and computer readable storage medium

Номер патента: TW201035371A. Автор: Manabu Honma. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-10-01.

Method of forming semiconductor device and the device formed by the method

Номер патента: KR101841199B1. Автор: 박인선,백종민,홍종원,김회승. Владелец: 삼성전자주식회사. Дата публикации: 2018-03-23.

Metal copper film and fabricating method thereof, metal copper pattern and conductor wiring using the same, metal copper bump, heat conducting path, bonding material, and liquid composition

Номер патента: TW201116649A. Автор: Katsuyuki Masuda,Kazunori Yamamoto,Yasushi Kumashiro,Shunya Yokozawa,Yoshinori Ejiri,Hideo Nakako,Maki Inada,Kyouko Kuroda. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2011-05-16.

Etching gaseous mixture for transition metallic thin film and method for etching transition metallic thin film formed by using the same

Номер патента: JPH1068094A. Автор: Chinko Kin,鎭 洪 金,Seiichi U,誠 一 禹. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1998-03-10.

Method for forming thin film and method for fabricating organic light-emitting diode (OLED) display using the same

Номер патента: US9614192B2. Автор: VALERIY Prushinskiy,LEONID Kaplan,Won-baek Lee,Ji-ryun Park,Hee-Sang Park. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-04-04.

Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device

Номер патента: US20210143251A1. Автор: Takahiro Sasaki,Isao Takahashi,Toshimi Hitora,Tokiyoshi Matsuda. Владелец: Flosfia Inc. Дата публикации: 2021-05-13.

CRYSTAL, CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR FILM CONTAINING CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL AND/OR SEMICONDUCTOR FILM AND SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20210143251A1. Автор: TAKAHASHI Isao,Sasaki Takahiro,Hitora Toshimi,MATSUDA Tokiyoshi. Владелец: . Дата публикации: 2021-05-13.

Method for depositing a thin film and manufacturing a semiconductor device

Номер патента: KR102457289B1. Автор: 한용규,김영훈,김대연,유태희,임완규,유진근. Владелец: 에이에스엠 아이피 홀딩 비.브이.. Дата публикации: 2022-10-21.

Formation of cobalt silicide film and manufacture of semiconductor device therewith

Номер патента: CN100392826C. Автор: 朴惠贞,具景谟,具滋钦. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-06-04.

Formation of cobalt silicide film and manufacture of semiconductor device therewith

Номер патента: CN1510726A. Автор: 朴惠贞,具景谟,具滋钦. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-07-07.

Method of forming a film and manufacturing a semiconductor device

Номер патента: DE112020004152T5. Автор: Tatsuji Nagaoka,Hiroyuki Nishinaka,Masahiro Yoshimoto,Daisuke Tahara. Владелец: Kyoto Institute of Technology NUC. Дата публикации: 2022-05-19.

Method for forming film and manufacture of semiconductor device

Номер патента: TW417172B. Автор: Kazuo Maeda,Noboru Tokumasu. Владелец: Canon Sales Co Inc. Дата публикации: 2001-01-01.

ANISOTROPIC CONDUCTIVE FILM INCLUDING POLYMER LAYER RESTRICTING MOVEMENT OF CONDUCTIVE PARTICLES AND METHOD OF MANUFACTURING THE SAME USING VERTICAL ULTRASONIC WAVES

Номер патента: US20180298206A1. Автор: Lee Sanghoon,Paik KyoungWook,Yoon DalJin. Владелец: . Дата публикации: 2018-10-18.

Monocrystalline silicon carbide substrate, method for manufacturing the same, and semiconductor device

Номер патента: US20240105782A1. Автор: Jing Yao,Jian Yang,Guangming Wang,Chunjun Liu,Tonghua Peng,Yanfang LOU,Qing Yong. Владелец: Jiangsu Tankeblue Semiconductor Co Ltd. Дата публикации: 2024-03-28.

Transparent conductive film, and organic light-emitting device comprising same

Номер патента: US09773996B2. Автор: Yeon Keun Lee,Jihee KIM,Jungdoo KIM. Владелец: LG Chem Ltd. Дата публикации: 2017-09-26.

Advanced anisotropic insulated conductive ball for electric connection, preparing method thereof and product using the same

Номер патента: US20090178826A1. Автор: Eui-Deok Kim,Joo-Seok Oh,Ki-Suk Park,Seoung-Whan Shin. Владелец: Hanwha Chemical Corp. Дата публикации: 2009-07-16.

Semiconductor device and method for manufacturing the same

Номер патента: US20110287621A1. Автор: Kosei Noda. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-11-24.

Functional material and preparation method thereof, resin composition, film, and display device

Номер патента: US09587121B2. Автор: Feng Bai,Jiuxia YANG,Jiantao Liu. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-03-07.

Compound for forming organic film, and organic light emitting device and flat panel display device including the same

Номер патента: CN101508670B. Автор: 黄皙焕,金荣国,郭允铉,李贞仁. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-05-15.

Compound for forming organic film, and organic light emitting device and flat panel display device including the same

Номер патента: TW200940482A. Автор: Yoon-Hyun Kwak,Seok-Hwan Hwang,Young-Kook Kim,Jeoung-In Yi. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2009-10-01.

Hydrophilic film, and planographic printing material, stain-preventative member and defogging member using the same

Номер патента: US20090069506A1. Автор: Kazuto Shimada,Satoshi Hoshi,Sumiaki Yamasaki. Владелец: Fujifilm Corp. Дата публикации: 2009-03-12.

Method of forming perovskite thin film and light-emitting device including layer manufactured thereby

Номер патента: US11895903B2. Автор: Dongchan Kim,Jiyoung Moon,Yoonseok KA,Heechang YOON. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-02-06.

Polymer film, and optical compensation film, polarizing plate, and liquid crystal display using the same

Номер патента: CN101014885A. Автор: 中山元,二村惠朗,高桥修,西浦阳介（已故）,松藤明博,大松禎. Владелец: Fujifilm Corp. Дата публикации: 2007-08-08.

Polymer film, and optically-compensatory film, polarizer and liquid-crystal display device comprising the same

Номер патента: KR101269744B1. Автор: 오사무 다카하시,하지메 나카야마,시게아키 니무라,아키히로 마츠후지,요우스케 니시우라,다다시 오마츠. Владелец: 후지필름 가부시키가이샤. Дата публикации: 2013-05-30.

Semiconductor devices having through electrodes, methods of manufacturing the same, and semiconductor packages including the same

Номер патента: US09595499B2. Автор: Wan Choon PARK. Владелец: SK hynix Inc. Дата публикации: 2017-03-14.

Semiconductor device, display device, and method of manufacturing the same

Номер патента: US20040113150A1. Автор: Satoshi Murakami,Masayuki Sakakura,Hirokazu Yamagata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2004-06-17.

Semiconductor device, display device, and method of manufacturing the same

Номер патента: US20030038321A1. Автор: Satoshi Murakami,Masayuki Sakakura,Hirokazu Yamagata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2003-02-27.

Epitaxial Growth Process for Semiconductor Device and Semiconductor Device Comprising Epitaxial Layer Formed By Adopting the Same

Номер патента: US20210398805A1. Автор: Qin Deng,Huojin Tu,Zhanyuan Hu,Jueyang Liu. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2021-12-23.

Semiconductor device and method and apparatus for fabricating the same

Номер патента: US20010033025A1. Автор: Takeshi Harada. Владелец: Individual. Дата публикации: 2001-10-25.

Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method

Номер патента: US20040033683A1. Автор: Kenji Tanaka,Hirofumi Koike,Kazuya Suzuki,Kouichi Asai,Kazutoshi Sakai,Shunji Yoshikane. Владелец: Fuji Machine Manufacturing Co Ltd. Дата публикации: 2004-02-19.

Semiconductor devices having through electrodes, methods of fabricating the same, electronic systems including the same, and memory cards including same

Номер патента: US09536846B2. Автор: Jin Woo Park,Bae Yong Kim,Sung Su Park. Владелец: SK hynix Inc. Дата публикации: 2017-01-03.

Thin-film semiconductor device, electro-optical device, methods for manufacturing the same, and reticle

Номер патента: US20030160244A1. Автор: Takahiro Amano,Kiyofumi Kitawada. Владелец: Seiko Epson Corp. Дата публикации: 2003-08-28.

Semiconductor device package and the method of manufacturing the same

Номер патента: US12107056B2. Автор: Ya Fang CHAN,Yuan-Feng CHIANG,Po-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-10-01.

Semiconductor device fabrication methods and devices for forming the same

Номер патента: US20240359287A1. Автор: Chi-hsiang Shen,Shich-Chang Suen,Chih Hung Chen,Te-Chien Hou,Yu-Heng Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device having test unit, electronic apparatus having the same, and method for testing the semiconductor device

Номер патента: US09318393B2. Автор: Byung Wook Bae. Владелец: SK hynix Inc. Дата публикации: 2016-04-19.

Semiconductor devices including bit line contact plug and buried channel array transistor, methods of fabricating the same, and semiconductor modules, electronic circuit boards and electronic systems including the same

Номер патента: US20110241102A1. Автор: Jin-Young Kim,Nam-Gun Kim,Sung-il Cho,Bong-Soo Kim,Hyun-Chul Yoon,Kwan-Sik Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-10-06.

Semiconductor device and liquid crystal display device containing the same

Номер патента: US09494829B2. Автор: Junya Goto,Yasuyuki Arai,Masahiko Hayakawa,Yuta Moriya. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-15.

Defect inspection system and semiconductor fabrication apparatus including a defect inspection apparatus using the same

Номер патента: US12073556B2. Автор: Jeong Ok PARK. Владелец: SK hynix Inc. Дата публикации: 2024-08-27.

Semiconductor device, display device and method of fabricating the same

Номер патента: US20010020702A1. Автор: Kiichi Hirano,Naoya Sotani,Toshifumi Yamaji,Yoshihiro Morimoto,Kiyoshi Yoneda. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2001-09-13.

Semiconductor device and method for pattern layout for the same using total size of transistors

Номер патента: US6389583B1. Автор: Haruji Yamazaki. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2002-05-14.

Semiconductor device including thyristor and method of manufacturing the same

Номер патента: US8049248B2. Автор: Tetsuya Ikuta. Владелец: Sony Corp. Дата публикации: 2011-11-01.

Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same

Номер патента: US09406447B2. Автор: Jong Hak Kim,Jeong Hun Kim,Eun Kyoung Kim,Jong Kwan Koh,Jong Beom Na,Chi Hyun Park. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2016-08-02.

Semiconductor device with fuse and method for fabricating the same

Номер патента: US20090166803A1. Автор: Buem-Suck Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same

Номер патента: US11476114B2. Автор: Qin Deng,Huojin Tu,Zhanyuan Hu,Jueyang Liu. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2022-10-18.

Semiconductor devices, FinFET devices and methods of forming the same

Номер патента: US09997633B2. Автор: Chii-Ming Wu,Ru-Shang Hsiao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-12.

Semiconductor devices, FinFET devices and methods of forming the same

Номер патента: US09876083B2. Автор: Chia-Ming Tsai,Wei-Cheng Wang,Miin-Jang Chen,Liang-Chen Chi,Chin-Kun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-23.

Semiconductor devices having airgaps and methods of manufacturing the same

Номер патента: US09773795B2. Автор: Jinhyun Shin,Jae-Hwang Sim,Hojun SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-26.

Semiconductor devices, FinFET devices and methods of forming the same

Номер патента: US09761483B1. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Semiconductor devices including vertical transistors, electronic systems including the same and methods of manufacturing the same

Номер патента: US20130334583A1. Автор: Ki Ho Yang. Владелец: SK hynix Inc. Дата публикации: 2013-12-19.

Semiconductor device, electronic device, and method of fabricating the same

Номер патента: US09515086B2. Автор: Young-Jin Noh,Jaeyoung Ahn,Kwangmin Park,Gukhyon Yon,Dongchul Yoo,Bio Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

Semiconductor device including support structure, method for manufacturing the same and electronic system including the same

Номер патента: US20220336489A1. Автор: Dongseong Kim,Kangmin KIM,Junhyoung Kim,Byungkwan You,Kiyoon KANG,Seugmin LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-20.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190341368A1. Автор: Chih-Pin Hung,Chih-Yi Huang,Ian HU,Ming-Han WANG,Tsun-Lung HSIEH. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-11-07.

Semiconductor device package and light irradiation device comprising the same

Номер патента: US12021167B2. Автор: Ki Cheol Kim,Jung Hun Oh. Владелец: LG Innotek Co Ltd. Дата публикации: 2024-06-25.

Semiconductor Devices and Methods of Designing and Forming the Same

Номер патента: US20240321958A1. Автор: Xiaodong Wang,Jhon Jhy Liaw,Yu-Lung Tung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor device to dispel charges and method forming the same

Номер патента: US09906224B1. Автор: Yu-Lin Chu,Hsi-Yu Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-27.

Integrated semiconductor device and wafer level method of fabricating the same

Номер патента: US09691725B2. Автор: Chia-Hua Chu,Alexander Kalnitsky,Chun-Wen Cheng,Kuei-Sung CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.

Semiconductor device having stressor and method of fabricating the same

Номер патента: US09466721B1. Автор: Yang Xu,Sunyoung Lee,Seokhoon Kim,Jinbum Kim,Jaeyoung Park,Byeongchan Lee,Choeun LEE,Hanki Lee,Sujin JUNG,Hyunjae KANG,Kwanheum Lee,Kanghun Moon,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Semiconductor device and methods of forming and operating the same

Номер патента: US20100001339A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-07.

Semiconductor devices, FinFET devices, and methods of forming the same

Номер патента: US09887136B2. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-06.

Semiconductor device and method for evaluating characteristics of the same

Номер патента: US7042007B2. Автор: Takatoshi Yasui,Atsuhiro Kajiya. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-05-09.

Semiconductor devices, memory devices, and methods for forming the same

Номер патента: WO2023130203A1. Автор: LIANG Chen. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-07-13.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20180374811A1. Автор: Chung-Chieh Yang,Tien-Szu Chen,Sheng-Ming Wang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-12-27.

Semiconductor device, finfet device and methods of forming the same

Номер патента: US20240258390A1. Автор: Tze-Liang Lee,Chung-Ting Ko,Tai-Chun Huang,Jr-Hung Li,Wan-Chen Hsieh,Po-Hsien Cheng,Jr-Yu Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Semiconductor devices including capacitors and methods of manufacturing the same

Номер патента: US20130207232A1. Автор: Hyung Ju JIN. Владелец: SK hynix Inc. Дата публикации: 2013-08-15.

Method for forming inner capacitor of semiconductor devices using oxide layers formed by the SACVD method

Номер патента: US20020039827A1. Автор: Jai-Sun Roh. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2002-04-04.

Semiconductor devices, memory devices, and methods for forming the same

Номер патента: EP4437810A1. Автор: LIANG Chen. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-02.

Semiconductor device having test unit, electronic apparatus having the same, and method for testing the semiconductor device

Номер патента: US20150097185A1. Автор: Byung Wook Bae. Владелец: SK hynix Inc. Дата публикации: 2015-04-09.

Manufacturing method of semiconductor device and test socket for use in the same

Номер патента: US20240201223A1. Автор: Toshitsugu Ishii. Владелец: Renesas Electronics Corp. Дата публикации: 2024-06-20.

Semiconductor device, integrated circuit and methods of manufacturing the same

Номер патента: US20240213246A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Yi-Tse Hung,Ang-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

Semiconductor device having groove and method of fabricating the same

Номер патента: US20030068875A1. Автор: Nak-Jin Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-04-10.

Semiconductor device having diode and method of forming the same

Номер патента: US20140183435A1. Автор: Dong-Bok Lee,Sea-Phyo KIM,Chan-Min LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-03.

Semiconductor device with recess and method of manufacturing the same

Номер патента: US11049869B2. Автор: Takashi Hashimoto,Shinichiro Abe,Hideaki YAMAKOSHI,Yuto OMIZU. Владелец: Renesas Electronics Corp. Дата публикации: 2021-06-29.

Semiconductor devices and methods of designing and manufacturing the same

Номер патента: US20230016635A1. Автор: Wei-Cheng Lin,Shih-Wei Peng,Jiann-Tyng Tzeng,Ching-Yu Huang,Wei-Cheng TZENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-19.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20190326178A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2019-10-24.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200118883A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-16.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190067211A1. Автор: Chih Cheng Lee,Yuan-Chang Su. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-02-28.

Semiconductor device and massive data storage system including the same

Номер патента: US20230307353A1. Автор: Yohan Lee,ChaeHoon KIM,Jaeduk Yu,Jiho Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Semiconductor device and massive data storage system including the same

Номер патента: US12057391B2. Автор: Yohan Lee,ChaeHoon KIM,Jaeduk Yu,Jiho Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-06.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200118882A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-16.

Semiconductor device and methods of manufacturing and operating the same

Номер патента: US20150236036A1. Автор: Keon Soo Shim. Владелец: SK hynix Inc. Дата публикации: 2015-08-20.

Semiconductor device protective structure and method for fabricating the same

Номер патента: US20070007648A1. Автор: Wen-Kun Yang,Jui-Hsien Chang,Chihwei Lin,Kuang-Chi Chao,Cheng-hsien Chiu. Владелец: Advanced Chip Engineering Technology Inc. Дата публикации: 2007-01-11.

Semiconductor device package and a method of manufacturing the same

Номер патента: US09953931B1. Автор: Wei-Hsuan Lee,Yu-Chih Lee,Chih Sheng Yao,Huan Wun Li. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-04-24.

Semiconductor device and methods of manufacturing and operating the same

Номер патента: US09853041B2. Автор: Keon Soo Shim. Владелец: SK hynix Inc. Дата публикации: 2017-12-26.

Semiconductor devices having silicide and methods of manufacturing the same

Номер патента: US09704865B2. Автор: Junggun YOU,Wei-Hua Hsu,Hyungjong LEE,Choongho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Semiconductor device including capacitor and method of fabricating the same

Номер патента: US09673272B2. Автор: Younsoo Kim,Yunjung Choi,Hanjin Lim,Jin-Su Lee,Se Hoon Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Semiconductor device having stressor and method of forming the same

Номер патента: US09577097B2. Автор: Jaehoon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

Semiconductor device including capacitor and method for manufacturing the same

Номер патента: US09548300B2. Автор: Jung-Sam Kim. Владелец: SK hynix Inc. Дата публикации: 2017-01-17.

Semiconductor devices including capacitors and methods of manufacturing the same

Номер патента: US09431476B2. Автор: Ji-Young Kim,Seung-Jun Lee,Hoon Jeong,Jun-Soo Lee,Sung-eui Kim,Young-Seung Cho,Chan-Won Kim,Jong-bom Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-30.

Semiconductor device with fuse and method for fabricating the same

Номер патента: US20090166802A1. Автор: Buem-Suck Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-07-02.

Semiconductor device, display panel, and display device including the same

Номер патента: US11832486B2. Автор: Seong-Mok CHO,Jaehyun MOON,Ji Hun Choi,Chan Woo Park,Seung Youl Kang,Sung Haeng Cho,Yong Hae Kim,Chi-Sun Hwang,Jeho NA,Jae-Eun PI,Jong-Heon Yang,Hee-ok KIM,Himchan OH. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-11-28.

Semiconductor device having opening and method of fabricating the same

Номер патента: US20040048489A1. Автор: Takashi Goto,Yoshinari Ichihashi. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2004-03-11.

Semiconductor device with super junction and process for the same

Номер патента: US20190355810A1. Автор: Kuan-Yu Chen. Владелец: Pfc Device Holdings Ltd. Дата публикации: 2019-11-21.

Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same

Номер патента: US20060124971A1. Автор: Hiroyuki Ogawa,Yoshitaka Yamamoto,Yoshinobu Kimura,Masato Hiramatsu,Masakiyo Matsumura,Masayuki Jyumonji. Владелец: Advanced LCD Technologies Development Center Co Ltd. Дата публикации: 2006-06-15.

Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same

Номер патента: US20040164298A1. Автор: Hiroyuki Ogawa,Yoshitaka Yamamoto,Yoshinobu Kimura,Masato Hiramatsu,Masakiyo Matsumura,Masayuki Jyumonji. Владелец: Advanced LCD Technologies Development Center Co Ltd. Дата публикации: 2004-08-26.

Semiconductor device, display device and method of fabricating the same

Номер патента: US20050014316A1. Автор: Kiichi Hirano,Naoya Sotani,Toshifumi Yamaji,Yoshihiro Morimoto,Kiyoshi Yoneda. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2005-01-20.

Semiconductor device including transistors and method for manufacturing the same

Номер патента: US12009434B2. Автор: Hidekazu Miyairi,Takeshi Osada,Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-06-11.

Semiconductor devices having fuses and methods of forming the same

Номер патента: US7510914B2. Автор: Jong-Kyu Kim,Hyun-Chul Yoon,Jang-Bin Yim,Sang-Dong Kwon,Sung-Gil Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-03-31.

Semiconductor device including capacitor and method of forming the same

Номер патента: US20210296430A1. Автор: Akira Kaneko. Владелец: Micron Technology Inc. Дата публикации: 2021-09-23.

Semiconductor device, semiconductor component and display panel including the same

Номер патента: US11894489B2. Автор: Min-Hsun Hsieh,Yu-Tsu Lee,Wei-Jen Hsueh. Владелец: Epistar Corp. Дата публикации: 2024-02-06.

Semiconductor device, semiconductor package, and method of manufacturing the same

Номер патента: US20220254699A1. Автор: Tun-Ching PI. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-08-11.

Power semiconductor device with reduced loss and manufacturing method the same

Номер патента: US20230317837A1. Автор: Chongman Yun,Jin Young Jung,Kwang Hoon OH,Soo Seong KIM. Владелец: Trinno Tech Co Ltd. Дата публикации: 2023-10-05.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20220084958A1. Автор: Peng Yang,Yuan-Feng CHIANG,Po-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-03-17.

Semiconductor device package and a method of manufacturing the same

Номер патента: US11837557B2. Автор: Peng Yang,Yuan-Feng CHIANG,Po-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-12-05.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20240128206A1. Автор: Peng Yang,Yuan-Feng CHIANG,Po-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-04-18.

Semiconductor device and logic circuit constituted by the semiconductor device

Номер патента: US4260906A. Автор: Masanori Nakai,Yukuya Tokumaru. Владелец: Tokyo Shibaura Electric Co Ltd. Дата публикации: 1981-04-07.

Semiconductor device and massive data storage system including the same

Номер патента: US20230326847A1. Автор: Jiwon Kim,Sungmin Hwang,Jaeho Ahn,Sukkang SUNG,Joonsung Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-12.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20230246014A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-03.

Semiconductor device package and a method of manufacturing the same

Номер патента: US11862525B2. Автор: Chung-Wei Hsu,Pei-Yu Wang,Tsung-Yu Lin. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-01-02.

Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer

Номер патента: US20200135769A1. Автор: Kevin D. Leedy,Andrew J. Green,Michael L. Schuette,Gregg H. Jessen,Robert C. Fitch, JR.. Владелец: US Air Force. Дата публикации: 2020-04-30.

Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer

Номер патента: US10930676B2. Автор: Kevin D. Leedy,Andrew J. Green,Michael L. Schuette,Gregg H. Jessen,Robert C. Fitch, JR.. Владелец: US Air Force. Дата публикации: 2021-02-23.

Semiconductor device package and a method of manufacturing the same

Номер патента: US11784296B2. Автор: Lu-Ming Lai,Yu-Ying Lee,Mei-Yi Wu,Yung-Yi Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2023-10-10.

Semiconductor device driving circuit and method of testing the same

Номер патента: US20140139245A1. Автор: Daisuke Hirata. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-05-22.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20180233643A1. Автор: Lu-Ming Lai,Yu-Ying Lee,Mei-Yi Wu,Yung-Yi Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-08-16.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20240145319A1. Автор: Chung-Wei Hsu,Pei-Yu Wang,Tsung-Yu Lin. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-05-02.

Semiconductor device, FinFET device and methods of forming the same

Номер патента: US11984485B2. Автор: Tze-Liang Lee,Chung-Ting Ko,Tai-Chun Huang,Jr-Hung Li,Wan-Chen Hsieh,Po-Hsien Cheng,Jr-Yu Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

Semiconductor device with capacitor and method for forming the same

Номер патента: US11923352B2. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20240178211A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Shih-Fen Huang,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Method for fabricating semiconductor device and pmos device fabricated by the method

Номер патента: US20130234216A1. Автор: Chih-Chung Chen,Chun-Chia Chen,Shih-Chieh Hsu,Shao-Hua Hsu,Chi-Horn Pai,Ying-Hung Chou,Zen-Jay Tsai,Shih-Hao Su. Владелец: United Microelectronics Corp. Дата публикации: 2013-09-12.

Semiconductor-device mounted board and method of manufacturing the same

Номер патента: US20110127656A1. Автор: Toshio Kobayashi,Takashi Kurihara,Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2011-06-02.

Semiconductor device having capacitor and method of manufacturing the same

Номер патента: US6399457B2. Автор: Hyeon-deok Lee,Myoung-Bum Lee,Byung-lyul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-06-04.

Semiconductor device and electric power conversion system using the same

Номер патента: EP2549539A1. Автор: Hiroshi Suzuki,Mutsuhiro Mori,Masaki Shiraishi,So Watanabe. Владелец: HITACHI LTD. Дата публикации: 2013-01-23.

Semiconductor device including transistor and method of manufacturing the same

Номер патента: US8937343B2. Автор: NaeIn Lee,Dong Hyuk Kim,DongSuk Shin,Hoi Sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-01-20.

Semiconductor device including capacitor and method of forming the same

Номер патента: US11411069B2. Автор: Cheol Seong Hwang,Han Jin Lim,Sang Yeol Kang,Kyu Ho Cho. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2022-08-09.

Semiconductor device and methods of forming and operating the same

Номер патента: US20200328217A1. Автор: Nan Wang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-10-15.

Semiconductor device and massive data storage system including the same

Номер патента: EP4255149A1. Автор: Yohan Lee,ChaeHoon KIM,Jaeduk Yu,Jiho Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-04.

Semiconductor device, integrated circuit and methods of manufacturing the same

Номер патента: US11948941B2. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Yi-Tse Hung,Ang-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US11901256B2. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Semiconductor device and methods of manufacturing and operating the same

Номер патента: US20150117108A1. Автор: Keon Soo Shim. Владелец: SK hynix Inc. Дата публикации: 2015-04-30.

Semiconductor device including tsv and method of manufacturing the same

Номер патента: US20200273780A1. Автор: Sang Jun Park,Eun Ji Kim,Sung Dong Cho,Dong Chan Lim,Kwang Wuk Park,Hak Seung Lee,Dae Suk Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-08-27.

Semiconductor device including fin and method for manufacturing the same

Номер патента: US11769803B2. Автор: Sungmin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-26.

Semiconductor device with capacitor and method for forming the same

Номер патента: US20240030359A1. Автор: Shu-Hui SU,Yu-Chi Chang,Hsin-Li Cheng,Hsuan-Ning Shih,Yingkit Felix Tsui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US20230068485A1. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Semiconductor device, semiconductor arrangement and method for producing the same

Номер патента: US11887961B2. Автор: Paul Frank,Frank Wagner,Sven Schmidbauer,Oliver Schilling,Thomas Heinelt. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-30.

Via structure connecting front side structure of semiconductor device to bspdn, and method of manufacturing the same using sacrificial via structure

Номер патента: US20230343839A1. Автор: Kang-ill Seo,Jongjin Lee,Eun Sung Kim,MyungHoon JUNG,Wonhyuk HONG,Jaejik Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-26.

Semiconductor device protective structure and method for fabricating the same

Номер патента: US20070082428A1. Автор: Wen-Kun Yang,Jui-Hsien Chang,Chihwei Lin,Kuang-Chi Chao,Cheng-hsien Chiu. Владелец: Advanced Chip Engineering Technology Inc. Дата публикации: 2007-04-12.

Semiconductor devices with nanowires and methods for fabricating the same

Номер патента: US11967595B2. Автор: Sang Yong Kim,Sang Jin HYUN,Jae Jung Kim,Young Suk CHAI,Hoon Joo NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-23.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190206843A1. Автор: Yu-Kai Lin,Yu-Pin Tsai,Yu-Ting LU,Chieh-Ju Tsai,Li-Hao LYU,Wei-Ming HSIEH,Man-Wen TSENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-07-04.

Semiconductor device including capacitor and method for fabricating the same

Номер патента: US20240145531A1. Автор: Do Hee KIM,Sei Yon KIM,Min Chul SUNG,Jung Wook WOO,Yeon Gyu LEE,Ja Yong KIM. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

Semiconductor device, semiconductor package, and methods of manufacturing the same

Номер патента: US20240145327A1. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Wei-Hung Lin,Chang-Jung Hsueh,Cheng-Nan Lin,Wan-Yu Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190131231A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-05-02.

Semiconductor device, semiconductor component and display panel including the same

Номер патента: US20240186449A1. Автор: Min-Hsun Hsieh,Yu-Tsu Lee,Wei-Jen Hsueh. Владелец: Epistar Corp. Дата публикации: 2024-06-06.

Semiconductor device including fin and method for manufacturing the same

Номер патента: US20210305375A1. Автор: Sungmin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-09-30.

Semiconductor device including transistor and method for fabricating the same

Номер патента: US20220328687A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2022-10-13.

Method for forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200135925A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-30.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20180061727A1. Автор: Yu-Kai Lin,Yu-Pin Tsai,Yu-Ting LU,Chieh-Ju Tsai,Li-Hao LYU,Wei-Ming HSIEH,Man-Wen TSENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-03-01.

Method for forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200135926A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-30.

Fine pitch anisotropic conductive adhesive

Номер патента: EP1093503A1. Автор: Glen Connell,Peter B. Hogerton,Barry S. Carpenter,Hiroaki H. Yamaguchi. Владелец: Minnesota Mining and Manufacturing Co. Дата публикации: 2001-04-25.

Heat transfer film and method of manufacturing partition walls of plasma display panel using the same

Номер патента: US20080124659A1. Автор: Jin Woo Park,Yoon Kwan Lee. Владелец: LG ELECTRONICS INC. Дата публикации: 2008-05-29.

Method of forming alignment film and liquid crystal display device comprising alignment film prepared by the same

Номер патента: KR100936915B1. Автор: 김경현,이재호,이계헌. Владелец: 삼성전자주식회사. Дата публикации: 2010-01-18.

Anisotropic conductive adhesives for thermo-compression bonding containing solder conductive particles and flux additives and method of connecting electronic parts using the same

Номер патента: US11732162B2. Автор: Jae Hyeong PARK,KyoungWook Paik. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-08-22.

Anisotropic conductive adhesives for thermo-compression bonding containing solder conductive particles and flux additives and method of connecting electronic parts using the same

Номер патента: US20210261829A1. Автор: Jae Hyeong PARK,KyoungWook Paik. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2021-08-26.

Stretchable transparency-adjusting film having an orientated heterogeneous interface, method for manufacturing the same and smart window having stretchable transparency-adjusting film

Номер патента: US12050314B2. Автор: Sanghyeon Nam,Seokwoo Jeon,Donghwi CHO,Youngsuk SHIM. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-07-30.

Thermoplastic films and bags with dual fragrance odor control and methods of making the same

Номер патента: US12091240B2. Автор: Edward B Tucker,Jeffrey S Stiglic,Dean A Ferracane,Christopher G Anderson,Jacqueline E Yee. Владелец: Glad Products Co. Дата публикации: 2024-09-17.

Polarizing plate with polyethylene terephthalate film as protective film, and method for manufacturing same

Номер патента: US20170010494A1. Автор: Dae Woong Lee,Sung Hyun Nam,Kyun Il Rah,Seunghee Nam. Владелец: LG Chem Ltd. Дата публикации: 2017-01-12.

POLYMER RESIN FOR ORGANIC BOTTOM ANTI-REFLECTIVE COATING FILM, AND ORGANIC BOTTOM ANTI-REFLECTIVE COATING COMPOSITIONS FOR KrF PHOTORESIST USING THE SAME

Номер патента: KR20020090584A. Автор: 김재현,강윤호,김덕배,송성국. Владелец: 주식회사 동진쎄미켐. Дата публикации: 2002-12-05.

Flexible transparent conductive film within LED flexible transparent display structure

Номер патента: US09490042B2. Автор: Tsung-Yen Tsai,Chia-Chien Chin,Yu-An Li,Shieh-Heng Lee. Владелец: Elite Optoelectronic Co Ltd. Дата публикации: 2016-11-08.

Flexible transparent conductive film, led flexible transparent display structure using the film, and method for forming the display structure

Номер патента: US20130292648A1. Автор: Tsung-Yen Tsai,Chia-Chien Chin,Yu-An Li,Shieh-Heng Lee. Владелец: Elite Optoelectronic Co Ltd. Дата публикации: 2013-11-07.

Flexible transparent conductive film, LED flexible transparent display structure using the film, and method for forming the display structure

Номер патента: US9118018B2. Автор: Tsung-Yen Tsai,Chia-Chien Chin,Yu-An Li,Shieh-Heng Lee. Владелец: Elite Optoelectronic Co Ltd. Дата публикации: 2015-08-25.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US12133396B2. Автор: Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US12114511B2. Автор: Yong-Jie WU,Yen-Chung Ho,Hui-Hsien Wei,Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US20240373650A1. Автор: Yong-Jie WU,Yen-Chung Ho,Hui-Hsien Wei,Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device including capacitor and method of fabricating the same

Номер патента: US20240292596A1. Автор: Jungmin Park,HyungSuk Jung,Hanjin Lim,Intak Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Semiconductor device and clock data recovery system including the same

Номер патента: US20140218081A1. Автор: Akinori Shinmyo. Владелец: Panasonic Corp. Дата публикации: 2014-08-07.

Method for filling gaps of semiconductor device and semiconductor device formed by the same

Номер патента: US09685319B2. Автор: Yu-Ren Wang,Yi-Hui Lin,Ping-Wei Huang,Keng-Jen Lin. Владелец: United Microelectronics Corp. Дата публикации: 2017-06-20.

Substrate with low-reflection surface film and structure, and semiconductor device

Номер патента: US20240128383A1. Автор: Guo-En Chang,Po-Ruei HUANG. Владелец: NATIONAL CHUNG CHENG UNIVERSITY. Дата публикации: 2024-04-18.

Anisotropic conductive film and utilize its semiconductor device

Номер патента: CN105706183B. Автор: 朴憬修,金智软,郑光珍,黃慈英. Владелец: Samsung SDI Co Ltd. Дата публикации: 2018-03-06.

Semiconductor package device and method of manufacturing the same

Номер патента: US20210111083A1. Автор: Lu-Ming Lai,wei-wei Liu,Huei-Siang WONG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-04-15.

Nano-tube semiconductor device and shear force sensor comprising same

Номер патента: EP4135058A1. Автор: Gyuchul Yi,Hongseok Oh. Владелец: FOUNDATION OF SOONGSIL UNIVERSITY INDUSTRY COOPERATION. Дата публикации: 2023-02-15.

Semiconductor device package and method for manufacturing the same

Номер патента: US20230223320A1. Автор: Zhou Zhou,Adam Brown,Ricardo Yandoc. Владелец: Nexperia BV. Дата публикации: 2023-07-13.

Method for fabricating semiconductor device

Номер патента: US7521305B2. Автор: Zing-Way Pei,Cha-Hsin Lin,Shing-Chii Lu,Ming-Jinn Tsai. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2009-04-21.

Semiconductor package and method of manufacturing the same

Номер патента: US12136590B2. Автор: Yun-seok Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-05.

Nonvolatile semiconductor memory device and method of manufacturing the same

Номер патента: US20110287624A1. Автор: Hiroyuki Nitta. Владелец: Toshiba Corp. Дата публикации: 2011-11-24.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US09472508B2. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-18.

Method of manufacturing a semiconductor device

Номер патента: US20080038897A1. Автор: Hiroshi Yoshino,Kazushi Suzuki,Yoshihiro Takaishi. Владелец: Elpida Memory Inc. Дата публикации: 2008-02-14.

Semiconductor Module and Method for Manufacturing the Same

Номер патента: US20230016808A1. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-01-19.

Semiconductor device package having warpage control and method of forming the same

Номер патента: US20230299017A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Shu-Shen Yeh,Chia-Kuei Hsu,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Cooling apparatus for semiconductor device

Номер патента: US20080180124A1. Автор: Young Bae Chung. Владелец: ISC Tech Co Ltd. Дата публикации: 2008-07-31.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240282715A1. Автор: Wei-Hao Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-08-22.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240249988A1. Автор: Yu-Chang Chen,Jen-Chieh Kao,Wei-Tung CHANG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-25.

Semiconductor device package and method of manufacturing the same

Номер патента: US20240304606A1. Автор: Wei-Hao Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-09-12.

Cooling apparatus for semiconductor device

Номер патента: SG144855A1. Автор: Young Bae Chung. Владелец: Isc Technology Co Ltd. Дата публикации: 2008-08-28.

Gate structures with various widths and method for forming the same

Номер патента: US09899265B2. Автор: Chia-Ming Chang,Tsung-Yu CHIANG,Wei-Shuo HO,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-20.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US09818666B2. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Semiconductor device structure and method for fabricating the same

Номер патента: US09711612B2. Автор: Huicai Zhong,Qingqing Liang,Haizhou Yin. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-07-18.

Gate structures with various widths and method for forming the same

Номер патента: US09524965B2. Автор: Chia-Ming Chang,Tsung-Yu CHIANG,Wei-Shuo HO,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-20.

Semiconductor devices having through electrodes, methods of manufacturing the same, and semiconductor packages including the same

Номер патента: US20160005706A1. Автор: Wan Choon PARK. Владелец: SK hynix Inc. Дата публикации: 2016-01-07.

SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, METHODS OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGES INCLUDING THE SAME

Номер патента: US20150279798A1. Автор: PARK Wan Choon. Владелец: . Дата публикации: 2015-10-01.

Semiconductor device producing method, system for carrying out the same and semiconductor work processing apparatus included in the same system

Номер патента: US6650409B1. Автор: Hiroshi Morioka,Kazuhiko Matsuoka,Kenji Watanabe,Fumiaki Endo,Hideaki Doi,Masataka Shiba,Yuzo Taniguchi,Yoshiharu Shigyo,Minori Noguchi,Yoshimasa Ohshima,Yukio Kembo,Hidetoshi Nishiyama. Владелец: HITACHI LTD. Дата публикации: 2003-11-18.

Semiconductor device, memory cell and method of forming the same

Номер патента: US20240196764A1. Автор: Shao-Ming Yu,Bo-Jiun Lin,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-13.

Capacitor of semiconductor device and distributed model circuit for the same

Номер патента: US20240014253A1. Автор: Ung Ki MIN,Yong Je JEON. Владелец: SK hynix Inc. Дата публикации: 2024-01-11.

Semiconductor device having carbon nanotube interconnects contact deposited with different orientation and method for manufacturing the same

Номер патента: US8410609B2. Автор: Huilong Zhu,Huicai Zhong,Qingqing Liang,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-04-02.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US20150206845A1. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-07-23.

Semiconductor device structure and method for manufacturing the same

Номер патента: US20120193798A1. Автор: Huilong Zhu,Huicai Zhong,Qingqing Liang,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2012-08-02.

Array substrate including switch element that includes control portion and semiconductor portion, and display panel and display device including the same

Номер патента: US11882737B2. Автор: Lei Li. Владелец: Xiamen Tianma Microelectronics Co Ltd. Дата публикации: 2024-01-23.

Semiconductor device structure with a fine pattern and method for forming the same

Номер патента: US20200411319A1. Автор: Yu-Han Hsueh. Владелец: Nanya Technology Corp. Дата публикации: 2020-12-31.

Semiconductor structure and method for manufacturing the same

Номер патента: US20130134516A1. Автор: Qiuxia Xu,Huajie Zhou. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-05-30.

Semiconductor structure and method for manufacturing the same

Номер патента: US8932927B2. Автор: Qiuxia Xu,Huajie Zhou. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2015-01-13.

Method of manufacturing a semiconductor device package having dummy dies

Номер патента: US12125822B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Seal rings structures in semiconductor device interconnect layers and methods of forming the same

Номер патента: US09780046B2. Автор: Han-Ping Pu,Pei-Haw Tsao,Hsin-Yu Pan,Yu-Chen Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-03.

Multi-gate semiconductor device for memory and method for forming the same

Номер патента: US12075608B2. Автор: Huai-Ying Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Electronics circuit device and method of making the same

Номер патента: US4246595A. Автор: Hiroaki Fujimoto,Masaharu Noyori. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-01-20.

Semiconductor package and method of manufacturing the same

Номер патента: US20230290711A1. Автор: Yun-seok Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US20160118350A1. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-04-28.

METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME

Номер патента: US20160133711A1. Автор: CHOU YU NA,WEI CHEN-KANG,CHUANG YI WEI,CHEN RONG ZHEN,YO CHUN WEI. Владелец: . Дата публикации: 2016-05-12.

Electronic component with semiconductor chip and semiconductor wafer with contact pads, and method for producing the same

Номер патента: DE10333465A1. Автор: Bernd Goller,Hermann Vilsmeier. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2005-03-03.

Method of fabricating source/drain region and semiconductor structure having source/drain region fabricated by the same

Номер патента: CN105990150A. Автор: 魏振刚,周玉娜,庄弋纬,陈容甄,游骏伟. Владелец: Inotera Memories Inc. Дата публикации: 2016-10-05.

Electrode for semiconductor chip and semiconductor chip with the electrode and method for preparing the same

Номер патента: CN101604817B. Автор: 多田健太郎. Владелец: Renesas Electronics Corp. Дата публикации: 2013-07-17.

Semiconductor device and method of manufacturing the same

Номер патента: US20240014067A1. Автор: Takayuki Igarashi,Hiroyuki ARIE. Владелец: Renesas Electronics Corp. Дата публикации: 2024-01-11.

Semiconductor device having fins and method of fabricating the same

Номер патента: US12027625B2. Автор: Kuo-Cheng Ching,Li-Te Lin,Jung-Hao CHANG,Chao-Hsien Huang,Shu-Hao KUO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Semiconductor device and method for forming pattern in the same

Номер патента: TW200828406A. Автор: Cheol-Kyu Bok,Keun-Do Ban. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-07-01.

Semiconductor device having capacitor and method of manufacturing the same

Номер патента: TW469600B. Автор: Toshinori Morihara. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-12-21.

Semiconductor device, chip package and method of fabricating the same

Номер патента: TW200849539A. Автор: Ying-Lieh Chen,Chien-Ru Chen. Владелец: Himax Tech Ltd. Дата публикации: 2008-12-16.

Semiconductor device, chip package and method of fabricating the same

Номер патента: TWI365527B. Автор: Ying Lieh Chen,Chien Ru Chen. Владелец: Himax Tech Ltd. Дата публикации: 2012-06-01.

Semiconductor device having fins and method of fabricating the same

Номер патента: US20240313116A1. Автор: Kuo-Cheng Ching,Li-Te Lin,Jung-Hao CHANG,Chao-Hsien Huang,Shu-Hao KUO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Method for Forming Gate Electrode and Semiconductor Device Having Gate Electrode Obtained by the Method

Номер патента: KR102123845B1. Автор: 민병규. Владелец: 한국전자통신연구원. Дата публикации: 2020-06-18.

Light-absorbing polymer for forming organic anti-reflective layer, composition including the same, and method for forming semiconductor device pattern using the same

Номер патента: WO2003098670A1. Автор: Kwanku Lee. Владелец: Molay Co., Ltd.. Дата публикации: 2003-11-27.

Gate structures with various widths and method for forming the same

Номер патента: US10522412B2. Автор: Chia-Ming Chang,Tsung-Yu CHIANG,Wei-Shuo HO,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-12-31.

Semiconductor device and method of fabrication thereof

Номер патента: US5279985A. Автор: Satoshi Kamiyama. Владелец: NEC Corp. Дата публикации: 1994-01-18.

Semiconductor device package having warpage control and method of forming the same

Номер патента: US11978729B2. Автор: Pei-Haw Tsao,Fu-Jen Li,Heh-Chang Huang,Shyue-Ter Leu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-07.

Semiconductor device package with stress reduction design and method of forming the same

Номер патента: US11894320B2. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Chin-Hua Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

Semiconductor device with air gap on gate structure and method for forming the same

Номер патента: US20230335584A1. Автор: Chia-Hao Chang,Yu-Ming Lin,Tien-Lu Lin,Chia-Lin Chuang,Che-Chen WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device

Номер патента: US9448482B2. Автор: Kaoru Iwato,Hiroo Takizawa,Takanobu Takeda. Владелец: Fujifilm Corp. Дата публикации: 2016-09-20.

Semiconductor device layout structure, method for forming same, and test system

Номер патента: US20240071844A1. Автор: Yizhi Zeng. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-29.

SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, SEMICONDUCTOR PACKAGES INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING THE SAME

Номер патента: US20160099229A1. Автор: CHOI Hyeong Seok. Владелец: . Дата публикации: 2016-04-07.

Semiconductor device and a fabrication process thereof

Номер патента: US20060284317A1. Автор: Takeshi Ito,Satoshi Inagaki,Kazuo Kawamura,Yasunori Uchino. Владелец: Fujitsu Ltd. Дата публикации: 2006-12-21.

Defect inspection system and semiconductor fabrication apparatus inclduing a defect inspection apparatus using the same

Номер патента: KR20230065872A. Автор: 박정옥. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2023-05-12.

Semiconductor device, method of manufacturing the same and apparatus for carrying out the method

Номер патента: MY103504A. Автор: Ljubomir Micic,Alex Mueller,Eberhard Schmitt,Guenter Gaettlein,Siegfried Spimdler,Egon Seng. Владелец: General Semiconductor Ireland. Дата публикации: 1993-06-30.

Semiconductor device package and method of manufacturing the same

Номер патента: US20200335458A1. Автор: Chien-Hua Chen,Sheng-chi Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-10-22.

Semiconductor device structures and methods of manufacturing the same

Номер патента: US11942560B2. Автор: Anbang ZHANG. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-03-26.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210358859A1. Автор: Ming-Hung Chen,Hui-Ping JIAN,Wei-Zhen QIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-11-18.

Semiconductor device package and method for packaging the same

Номер патента: US20210082835A1. Автор: Lu-Ming Lai,Yu-Che Huang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-03-18.

Semiconductor device structure and method for manufacturing the same

Номер патента: US20120187497A1. Автор: Huicai Zhong,Qingqing Liang. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2012-07-26.

Semiconductor device and data storage system including the same

Номер патента: US20220336358A1. Автор: Kihyun Kim,Seyong Oh,Jihwan YOU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-20.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210210433A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-08.

Semiconductor device package and method for manufacturing the same

Номер патента: EP4213203A1. Автор: Zhou Zhou,Adam Brown,Ricardo Yandoc. Владелец: Nexperia BV. Дата публикации: 2023-07-19.

Semiconductor device and data storage system including the same

Номер патента: US20220399360A1. Автор: Junhyoung Kim,Yonghoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-15.

Semiconductor device package and method of manufacturing the same

Номер патента: US20210202412A1. Автор: Chih-Cheng LEE,Yu-Lin Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-07-01.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220310521A1. Автор: Chao Wei LIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-09-29.

Semiconductor device and data storage system including the same

Номер патента: US20230026774A1. Автор: Sungmin Hwang,Bongtae Park,Jaejoo Shim,Taewon KANG,Dongsung Woo,Taegon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-01-26.

Semiconductor module and method for manufacturing the same

Номер патента: US11837636B2. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-12-05.

Semiconductor device package and method of manufacturing the same

Номер патента: US12027467B2. Автор: Shao-Lun YANG,Chun-Hung Yeh,Wei-Chih CHO,Tsung-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-07-02.

SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, METHODS OF FABRICATING THE SAME, ELECTRONIC SYSTEMS INCLUDING THE SAME, AND MEMORY CARDS INCLUDING SAME

Номер патента: US20160020184A1. Автор: Park Jin Woo,PARK Sung Su,KIM Bae Yong. Владелец: . Дата публикации: 2016-01-21.

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME

Номер патента: US20140302663A1. Автор: KIM Hyung-Hwan,Pyo Seung-Seok,CHOI Bong-Ho,LEE Jin-Yul. Владелец: . Дата публикации: 2014-10-09.

Method of manufacturing semiconductor device

Номер патента: CA1179836A. Автор: Hisayuki Higuchi,Tokuo Kure,Takeo Shiba,Yoichi Tamaki. Владелец: HITACHI LTD. Дата публикации: 1984-12-27.

Semiconductor device with isolation layer, electromagnetic device having the same and method for fabriacting the same

Номер патента: KR101890818B1. Автор: 김형환,최봉호,이진열,표승석. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2018-08-22.

Semiconductor memory and fabrication method for the same

Номер патента: US8183620B2. Автор: Masato Endo. Владелец: Toshiba Corp. Дата публикации: 2012-05-22.

Semiconductor device, memory cell and method of forming the same

Номер патента: US11957070B2. Автор: Shao-Ming Yu,Bo-Jiun Lin,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same

Номер патента: US20210280685A1. Автор: David B. Janes,Suprem R. DAS,Jiseok Kwon. Владелец: Kansas State University. Дата публикации: 2021-09-09.

Capacitor of semiconductor device and distributed model circuit for the same

Номер патента: US11804517B2. Автор: Ung Ki MIN,Yong Je JEON. Владелец: SK hynix Inc. Дата публикации: 2023-10-31.

Semiconductor device and its manufacture method

Номер патента: US20130154102A1. Автор: Sadahiro Kishii,Yasushi Kobayashi,Masato Tanaka,Yoshihiro Nakata,Tsuyoshi Kanki,Akio Rokugawa. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2013-06-20.

Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same

Номер патента: US11967629B2. Автор: David B. Janes,Suprem R. DAS,Jiseok Kwon. Владелец: Kansas State University. Дата публикации: 2024-04-23.

Semiconductor device package having warpage control

Номер патента: US20240145448A1. Автор: Pei-Haw Tsao,Fu-Jen Li,Heh-Chang Huang,Shyue-Ter Leu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor device, memory device and method of fabricating the same

Номер патента: US20230363159A1. Автор: Pi-Shan Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2023-11-09.

SEMICONDUCTOR DEVICES INCLUDING VERTICAL TRANSISTORS, ELECTRONIC SYSTEMS INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20130334583A1. Автор: YANG Ki Ho. Владелец: SK HYNIX INC.. Дата публикации: 2013-12-19.

SEMICONDUCTOR DEVICE HAVING BURIED GATE, METHOD OF FABRICATING THE SAME, AND MODULE AND SYSTEM HAVING THE SAME

Номер патента: US20140063934A1. Автор: YOO Min Soo,OH Tae Kyung. Владелец: SK HYNIX INC.. Дата публикации: 2014-03-06.

SEMICONDUCTOR DEVICES INCLUDING VERTICAL TRANSISTORS, ELECTRONIC SYSTEMS INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20150054066A1. Автор: YANG Ki Ho. Владелец: . Дата публикации: 2015-02-26.

SEMICONDUCTOR DEVICE HAVING BURIED GATE, METHOD OF FABRICATING THE SAME, AND MODULE AND SYSTEM HAVING THE SAME

Номер патента: US20160240538A1. Автор: YOO Min Soo,OH Tae Kyung. Владелец: . Дата публикации: 2016-08-18.

SEMICONDUCTOR DEVICE HAVING BURIED GATE, METHOD OF FABRICATING THE SAME, AND MODULE AND SYSTEM HAVING THE SAME

Номер патента: US20150263009A1. Автор: YOO Min Soo,OH Tae Kyung. Владелец: . Дата публикации: 2015-09-17.

Semiconductor device, display device and electronic device including the same

Номер патента: KR102241160B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2021-04-16.

Semiconductor device, display device and electronic device including the same

Номер патента: KR101785236B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2017-10-12.

Semiconductor device, display device and electronic device including the same

Номер патента: KR102006597B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2019-08-01.

Electro-optical device, semiconductor device, display device, and electronic apparatus having the same

Номер патента: US7843028B2. Автор: Yutaka Kobashi. Владелец: Sony Corp. Дата публикации: 2010-11-30.

Semiconductor device, display device and electronic device including the same

Номер патента: KR101959185B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2019-03-15.

Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same

Номер патента: US20040113228A1. Автор: Yoshihiro Minami,Takashi Yamada,Atsushi Azuma,Hiroaki Yamada,Kenji Kojima,Tatsuya Ohguro,Hajime Nagano,Kazumi Inoh. Владелец: Individual. Дата публикации: 2004-06-17.

Semiconductor device, display device and electronic device including the same

Номер патента: KR102052859B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2019-12-05.

Resin mold type semiconductor device.

Номер патента: MY113280A. Автор: Kojima Akira,Ohsawa Kenji,Makino Haruhiko. Владелец: Sony Corp. Дата публикации: 2002-01-31.

Semiconductor device, display device and electronic device including the same

Номер патента: KR101901542B1. Автор: 아쯔시 우메자끼. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2018-09-21.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US20180076109A1. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-15.

Semiconductor device substrate and method of manufacturing semiconductor device

Номер патента: US6469382B1. Автор: Yukio Nomura,Kouichi Hotozuka. Владелец: NEC Corp. Дата публикации: 2002-10-22.

METHOD FOR PATTERNING MESOPOROUS INORGANIC OXIDE FILM, AND ELECTRIC DEVICE INCLUDING MESOPOROUS INORGANIC OXIDE FILM PATTERNED BY THE SAME

Номер патента: US20140007936A1. Автор: Kim Eun Kyoung,KIM Jeong Hun,Park Chi Hyun,Kim Jong Hak,KOH JONG KWAN,NA JONG BEOM. Владелец: . Дата публикации: 2014-01-09.

Semiconductor devices, finfet devices and methods of forming the same

Номер патента: US20180005877A1. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-04.

Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer

Номер патента: US20210057454A1. Автор: Jr. Robert C.,Green Andrew J.,Schuette Michael L.,Jessen Gregg H.,Leedy Kevin D.,Fitch. Владелец: . Дата публикации: 2021-02-25.

SEMICONDUCTOR DEVICE HAVING TEST UNIT, ELECTRONIC APPARATUS HAVING THE SAME, AND METHOD FOR TESTING THE SEMICONDUCTOR DEVICE

Номер патента: US20150097185A1. Автор: BAE Byung Wook. Владелец: SK HYNIX INC.. Дата публикации: 2015-04-09.

SEMICONDUCTOR DEVICE, FINFET DEVICE AND METHODS OF FORMING THE SAME

Номер патента: US20210098584A1. Автор: Lee Tze-Liang,Huang Tai-Chun,Li Jr-Hung,Ko Chung-Ting,Cheng Po-Hsien,Chen Jr-Yu,Hsieh Wan-Chen. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2021-04-01.

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

Номер патента: US20170098711A1. Автор: WU Chii-Ming,HSIAO Ru-Shang. Владелец: . Дата публикации: 2017-04-06.

SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD OF FABRICATING THE SAME

Номер патента: US20160118398A1. Автор: Kim Bio,Ahn Jaeyoung,Yoo Dongchul,PARK Kwangmin,Noh Young-Jin,Yon Gukhyon. Владелец: . Дата публикации: 2016-04-28.

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

Номер патента: US20190140082A1. Автор: LEE Kun-Yu,YU Xiong-Fei,CHANG Chia-Yuan,HOU Cheng-Hao,Chang Che-Hao,Chui Chi-On,Lin Kuei-Lun. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2019-05-09.

Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer

Номер патента: US20200135769A1. Автор: Kevin D. Leedy,Andrew J. Green,Michael L. Schuette,Gregg H. Jessen,Robert C. Fitch, JR.. Владелец: US Air Force. Дата публикации: 2020-04-30.

SEMICONDUCTOR DEVICE PACKAGE AND LIGHT IRRADIATION DEVICE COMPRISING THE SAME

Номер патента: US20210210655A1. Автор: KIM Ki Cheol,OH Jung Hun. Владелец: LG INNOTEK CO., LTD.. Дата публикации: 2021-07-08.

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

Номер патента: US20210217870A1. Автор: Lee Hsin-Yi,Chui Chi-On,Chang Weng,Hung Cheng-Lung. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2021-07-15.

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

Номер патента: US20170222000A1. Автор: Wang Wei-Cheng,Chen Miin-Jang,Chi Liang-Chen,Tsai Chia-Ming,Wang Chin-Kun. Владелец: . Дата публикации: 2017-08-03.

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

Номер патента: US20170256444A1. Автор: Chang Che-Cheng,LIN Chih-Han,Tseng Horng-Huei. Владелец: . Дата публикации: 2017-09-07.

SEMICONDUCTOR DEVICES, FINFET DEVICES, AND METHODS OF FORMING THE SAME

Номер патента: US20170256458A1. Автор: Chang Che-Cheng,LIN Chih-Han,Tseng Horng-Huei. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2017-09-07.

Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer

Номер патента: US20180254290A1. Автор: Green Andrew J.,Schuette Michael L.,Jessen Gregg H.,Leedy Kevin D.,Fitch Robert C.. Владелец: . Дата публикации: 2018-09-06.

SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20170278872A1. Автор: Ohara Hiroki. Владелец: . Дата публикации: 2017-09-28.

METHOD FOR PATTERNING MESOPOROUS INORGANIC OXIDE FILM, AND ELECTRIC DEVICE INCLUDING MESOPOROUS INORGANIC OXIDE FILM PATTERNED BY THE SAME

Номер патента: US20160315006A1. Автор: Kim Eun Kyoung,KIM Jeong Hun,Park Chi Hyun,Kim Jong Hak,KOH JONG KWAN,NA JONG BEOM. Владелец: . Дата публикации: 2016-10-27.

SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20180308870A1. Автор: Ohara Hiroki. Владелец: . Дата публикации: 2018-10-25.

SEMICONDUCTOR DEVICE, MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

Номер патента: US20180366573A1. Автор: Han Tzung-Ting,Chan Yao-Fu,Chou Fu-Hsing. Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2018-12-20.

Vertical type semiconductor device, memory device and method of fabricating the same

Номер патента: KR20110043987A. Автор: 윤재만,마코토 요시다,이철,홍형선,전광열,황덕성. Владелец: 삼성전자주식회사. Дата публикации: 2011-04-28.

Vertical type semiconductor device memory device and method of fabricating the same

Номер патента: KR101576957B1. Автор: 윤재만,마코토 요시다,이철,홍형선,전광열,황덕성. Владелец: 삼성전자주식회사. Дата публикации: 2015-12-14.

Thin film semiconductor device, display device and method of manufacturing the same

Номер патента: KR100689950B1. Автор: 하야시히사오,후지노마사히로,시모가이치야스시,다카토쿠마코토. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2007-03-08.

The method for preparation of nickel oxide thin films and the method for crystallization of amorphous silicon thin film using the same and the method for manufacture of thin film transistor using the same

Номер патента: KR20070081218A. Автор: 이영국,김윤수,정택모,김창균,이선숙,안기석,황진하. Владелец: 황진하. Дата публикации: 2007-08-16.

Semiconductor device package and light emitting device including the same

Номер патента: KR102487357B1. Автор: 김기철,오정훈,최광기. Владелец: 엘지이노텍 주식회사. Дата публикации: 2023-01-11.

Semiconductor devices, finfet devices and methods of forming the same

Номер патента: TWI759277B. Автор: 林志翰,張哲誠,曾鴻輝. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2022-04-01.

Semiconductor device, semiconductor device array substrate and method of manufacturing the same

Номер патента: CN1629706A. Автор: 川村哲也. Владелец: Toshiba Matsushita Display Technology Co Ltd. Дата публикации: 2005-06-22.

A semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack, and a method of manufacturing the same

Номер патента: DE102004036909B4. Автор: Michael Dipl.-Ing. Bauer,Jens Dipl.-Ing. Pohl,Holger Dipl.-Ing. Wörner,Rainer Dipl.-Phys. Steiner,Hermann Dipl.-Ing. Vilsmeier,Bernhard Dipl.-Ing. Zuhr,Ulrich Dipl.-Ing. Bachmaier,Robert Dr.-Ing. Hagen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-04-05.

Method for patterning mesoporous inorganic oxide film, and electric device including mesoporous inorganic oxide film patterned by the same

Номер патента: US9892959B2. Автор: Jong Hak Kim,Jeong Hun Kim,Eun Kyoung Kim,Jong Kwan Koh,Jong Beom Na,Chi Hyun Park. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2018-02-13.

Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer

Номер патента: US20020127807A1. Автор: Tatsuya Usami. Владелец: Individual. Дата публикации: 2002-09-12.

Semiconductor device, electronic device, and manufacturing method of the same

Номер патента: US20090218658A1. Автор: Hisashi Toyoda. Владелец: Renesas Technology Corp. Дата публикации: 2009-09-03.

Semiconductor device package and light emitting device including the same

Номер патента: KR102487358B1. Автор: 오정훈. Владелец: 엘지이노텍 주식회사. Дата публикации: 2023-01-11.

Semiconductor device package and light emitting device including the same

Номер патента: KR20190094723A. Автор: 김기철,오정훈,최광기. Владелец: 엘지이노텍 주식회사. Дата публикации: 2019-08-14.

Semiconductor device, electronic device, and manufacturing method of the same

Номер патента: US8026575B2. Автор: Hisashi Toyoda. Владелец: Renesas Electronics Corp. Дата публикации: 2011-09-27.

Semiconductor device and multi-layer substrate used for the same semiconductor device

Номер патента: CN1674219A. Автор: 田中直敬,田崎耕司,安田雅昭,永井朗,河野贤哉. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2005-09-28.

Semiconductor device

Номер патента: EP4307374A1. Автор: Michael Fogarty Cahir,Stephen Geoffrey Badcock. Владелец: Diodes Inc. Дата публикации: 2024-01-17.

Semiconductor device

Номер патента: US20230307464A1. Автор: Hiroyuki Miyake,Jun Koyama,Kouhei Toyotaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-09-28.

SEMICONDUCTOR DEVICE COMPRISING CAPACITOR AND METHOD OF FABRICATING THE SAME

Номер патента: US20130214339A1. Автор: TANAKA Yoshinori,SHIMIZU Masahiro,Morita Sadayuki,Arima Hideaki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-08-22.

Integrated Semiconductor Device and Wafer Level Method of Fabricating the Same

Номер патента: US20140035158A1. Автор: Chu Chia-Hua,Cheng Chun-Wen,Chang Kuei-Sung,KALNITSKY Alex. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-02-06.

COUPLING ASSEMBLY OF POWER SEMICONDUCTOR DEVICE AND PCB AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20140070387A1. Автор: HEO Min,YOUN Bohyun. Владелец: LSIS CO., LTD.. Дата публикации: 2014-03-13.

SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20140084350A1. Автор: LEE Naein,Kim Dong Hyuk,Chung Hoi Sung,Shin Dongsuk. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-03-27.

METHOD FOR DIRECT FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20190006241A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2019-01-03.

STACK TYPE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING AND TESTING THE SAME

Номер патента: US20150011028A1. Автор: Yoo Sun Jong. Владелец: . Дата публикации: 2015-01-08.

SEMICONDUCTOR DEVICES, VIA STRUCTURES AND METHODS FOR FORMING THE SAME

Номер патента: US20180012823A1. Автор: Hebert Francois,CHEN Li-Che. Владелец: Vanguard International Semiconductor Corporation. Дата публикации: 2018-01-11.

SEMICONDUCTOR DEVICES WITH NANOWIRES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20210013207A1. Автор: KIM Sang Yong,HYUN Sang Jin,Kim Jae Jung,CHAI Young Suk,NA Hoon Joo. Владелец: . Дата публикации: 2021-01-14.

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20170018553A1. Автор: Lee Jun-noh,Park Joonsoo,KIM YOUNGKUK,KANG SANGYEOL,IM KiVin. Владелец: . Дата публикации: 2017-01-19.

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

Номер патента: US20220037399A1. Автор: Lin Yu-Chao,Lee Tung-Ying,Tu Yuan-Tien,Chiu Jung-Piao. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2022-02-03.

Semiconductor device including capacitor and method of forming the same

Номер патента: US20210020735A1. Автор: Cheol Seong Hwang,Han Jin Lim,Sang Yeol Kang,Kyu Ho Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-21.

SEMICONDUCTOR DEVICE WITH NANOSTRUCTURES AND METHODS OF FORMING THE SAME

Номер патента: US20210028318A1. Автор: CHANG Fu-Cheng,Tseng Hsin-Hsiang,Lee Chih-Fei,Cheng Chia-Pin. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2021-01-28.

METHOD FOR FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20180033889A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2018-02-01.

SEMICONDUCTOR DEVICES, SEMICONDUCTOR WAFERS, AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20210035926A1. Автор: Liu Chia-Jung,Liu Chia-Ying,Huang Chi-Chih,YANG WU-ZANG. Владелец: . Дата публикации: 2021-02-04.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180053705A1. Автор: Wang Wei-Jen. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-02-22.

SEMICONDUCTOR DEVICE COMPRISING CAPACITOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150061073A1. Автор: RHEE Hwa-Sung,KIM Yoon-Hae. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2015-03-05.

SEMICONDUCTOR DEVICE HAVING SUPPORTER AND METHOD OF FORMING THE SAME

Номер патента: US20140138794A1. Автор: KUH Bong-jin,Jung Soon-wook,Chung Byung-hong,KIM Wan-don,TAK Yong-Suk,YANG Hyun-Jeong. Владелец: . Дата публикации: 2014-05-22.

Semiconductor device driving circuit and method of testing the same

Номер патента: US20140139245A1. Автор: Daisuke Hirata. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-05-22.

METHOD OF MAKING SEMICONDUCTOR DEVICES AND A CONTROL SYSTEM FOR PERFORMING THE SAME

Номер патента: US20150066183A1. Автор: NAN Ching-Hsi,Fu Yu-Hsiu,CHANG Chia Jung. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2015-03-05.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180061727A1. Автор: LIN Yu-Kai,TSAI Yu-Pin,LU Yu-Ting,LYU Li-Hao,TSAI Chieh-Ju,HSIEH Wei-Ming,TSENG Man-Wen. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-03-01.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180061776A1. Автор: YANG Peng,LU Po-Wei,CHIANG Yuan-Feng. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-03-01.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180061813A1. Автор: TSAI Yu-Pin,LYU Li-Hao,HSIEH Wei-Ming,TSENG Man-Wen. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-03-01.

SEMICONDUCTOR DEVICE INCLUDING TSV AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20220084885A1. Автор: HAN Junghoon,Lee Juik. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-03-17.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20220084958A1. Автор: Peng Yang,Yuan-Feng CHIANG,Po-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-03-17.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190067211A1. Автор: Chih Cheng Lee,Yuan-Chang Su. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-02-28.

Semiconductor Devices with Nanowires and Methods for Fabricating the Same

Номер патента: US20180069006A1. Автор: KIM Sang Yong,HYUN Sang Jin,Kim Jae Jung,CHAI Young Suk,NA Hoon Joo. Владелец: . Дата публикации: 2018-03-08.

Semiconductor Device Including Capacitor and Method of Manufacturing the Same

Номер патента: US20150076658A1. Автор: TAK Yong-Suk,Kim Wandon,Cho Kyuho,YANG Hyunjeong,Kwon Ohseong. Владелец: . Дата публикации: 2015-03-19.

INTEGRATED SEMICONDUCTOR DEVICE AND WAFER LEVEL METHOD OF FABRICATING THE SAME

Номер патента: US20150076710A1. Автор: Chu Chia-Hua,Cheng Chun-Wen,Kalnitsky Alexander,Chang Kuei-Sung. Владелец: . Дата публикации: 2015-03-19.

SEMICONDUCTOR DEVICE HAVING SUPPORTERS AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20170077102A1. Автор: Hwang Yoosang,Choi Jaehyoung,Kim Bong-Soo,KIM Kyung-Eun,Kim Yongkwan,JANG Semyeong. Владелец: . Дата публикации: 2017-03-16.

SUBSTRATE FOR PACKAGING A SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190080995A1. Автор: SU YUAN-CHANG,Lee Chih-Cheng. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-03-14.

Semiconductor Device, and Module and Electronic Appliance Including the Same

Номер патента: US20200083260A1. Автор: Miyake Hiroyuki. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2020-03-12.

SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME

Номер патента: US20220139821A1. Автор: HWANG Sungmin,KIM Jiwon,Ahn Jaeho,Lim Joonsung,Sung Sukkang. Владелец: . Дата публикации: 2022-05-05.

SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME

Номер патента: US20220139951A1. Автор: SON YOUNGHWAN. Владелец: . Дата публикации: 2022-05-05.

SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME

Номер патента: US20190097056A1. Автор: Ching Kuo-Cheng,LIN Li-Te,Huang Chao-Hsien,CHANG Jung-Hao,KUO Shu-Hao. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2019-03-28.

Semiconductor device including capacitor and method of fabricating the same

Номер патента: US20160104763A1. Автор: Younsoo Kim,Yunjung Choi,Hanjin Lim,Jin-Su Lee,Se Hoon Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

SEMICONDUCTOR DEVICE HAVING DIODE AND METHOD OF FORMING THE SAME

Номер патента: US20140183435A1. Автор: LEE Dong-Bok,KIM Sea-Phyo,LEE Chan-Min. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-07-03.

SEMICONDUCTOR DEVICE INCLUDING TSV AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20220173016A1. Автор: Kim Eun Ji,PARK Sang Jun,LIM Dong Chan,Park Kwang Wuk,Cho Sung Dong,Lee Hak Seung,Lee Dae Suk. Владелец: . Дата публикации: 2022-06-02.

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING AND OPERATING THE SAME

Номер патента: US20150117108A1. Автор: SHIM Keon Soo. Владелец: SK HYNIX INC.. Дата публикации: 2015-04-30.

SEMICONDUCTOR DEVICES WITH NANOWIRES AND METHODS FOR FABRICATING THE SAME

Номер патента: US20190109135A1. Автор: KIM Sang Yong,HYUN Sang Jin,Kim Jae Jung,CHAI Young Suk,NA Hoon Joo. Владелец: . Дата публикации: 2019-04-11.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180114758A1. Автор: LEE Wei-Hsuan,LEE YU-CHIH,YAO Chih Sheng,LI Huan Wun. Владелец: . Дата публикации: 2018-04-26.

SEMICONDUCTOR DEVICE INCLUDING FIN AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20220271129A1. Автор: Kim Sungmin. Владелец: Samsung Electronics Co.. Ltd.. Дата публикации: 2022-08-25.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US20200118882A1. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2020-04-16.

METHOD FOR DIRECT FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20200118883A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2020-04-16.

SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150140747A1. Автор: LEE Naein,Kim Dong Hyuk,Chung Hoi Sung,Shin Dongsuk. Владелец: . Дата публикации: 2015-05-21.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190131231A1. Автор: Lu Wen-Long. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-05-02.

SEAL RINGS STRUCTURES IN SEMICONDUCTOR DEVICE INTERCONNECT LAYERS AND METHODS OF FORMING THE SAME

Номер патента: US20170141052A1. Автор: Pan Hsin-Yu,Pu Han-Ping,HSU Yu-Chen,TSAO Pei-Haw. Владелец: . Дата публикации: 2017-05-18.

Semiconductor Device, Semiconductor Arrangement and Method for Producing the Same

Номер патента: US20220285307A1. Автор: Paul Frank,Frank Wagner,Sven Schmidbauer,Oliver Schilling,Thomas Heinelt. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2022-09-08.

SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20220285345A1. Автор: Chen Tzu-Chiang,CHIANG Hung-Li,CHENG Chao-Ching,Hung Yi-Tse,Chou Ang-Sheng. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2022-09-08.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190139846A1. Автор: Lu Wen-Long. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-05-09.

METHOD FOR FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20200135925A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2020-04-30.

METHOD FOR FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20200135926A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2020-04-30.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190148297A1. Автор: Lee Chih-Cheng,Ho Cheng-Lin,CHAN Ya Fang,CHANG Chung Chieh. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-05-16.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20210183822A1. Автор: MOON Kwang-Jin,LIM Dong-Chan,Kim Tae-Seong,LEE Dae-suk,Lee Hak-seung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-06-17.

SEMICONDUCTOR DEVICE HAVING HETEROGENEOUS STRUCTURE AND METHOD FORMING THE SAME

Номер патента: US20160163704A1. Автор: LEE Jaehoon. Владелец: . Дата публикации: 2016-06-09.

SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FORMING THE SAME

Номер патента: US20160163860A1. Автор: LEE Jaehoon. Владелец: . Дата публикации: 2016-06-09.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20220301995A1. Автор: CHO Wei-Chih,YEH Chun-Hung,LU Tsung-Wei. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2022-09-22.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR COMPONENT AND DISPLAY PANEL INCLUDING THE SAME

Номер патента: US20220302346A1. Автор: Hsieh Min-Hsun,LEE Yu-Tsu,HSUEH Wei-Jen. Владелец: . Дата публикации: 2022-09-22.

SEMICONDUCTOR DEVICE HAVING SILICIDES AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20210193808A1. Автор: SHIN Heonjong,JUNG Sunghun,LEE Doohyun,JUN HWICHAN,HWANG INCHAN,AHN Hakyoon. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-06-24.

SEMICONDUCTOR DEVICE, TERMINATION STRUCTURE AND METHOD OF FORMING THE SAME

Номер патента: US20160172436A1. Автор: CHEN Meng-Hung,Ma Shih-Kuei,Ho Geng-Tai,Wu Hsiao-Chia,Lee Tien-Chun. Владелец: . Дата публикации: 2016-06-16.

SEMICONDUCTOR DEVICE, INTERCONNECTION STRUCTURE AND METHOD FOR FORMING THE SAME

Номер патента: US20190164828A1. Автор: Tsai Pang-Yen,OKUNO Yasutoshi,KHADERBAD Mrunal A.. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2019-05-30.

SEMICONDUCTOR DEVICE AND A DATA STORAGE SYSTEM INCLUDING THE SAME

Номер патента: US20220310515A1. Автор: SHIM Sunil,LIM Juyoung,LEE Jaeshin. Владелец: . Дата публикации: 2022-09-29.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20200161277A1. Автор: MOON Kwang-Jin,LIM Dong-Chan,Kim Tae-Seong,LEE Dae-suk,Lee Hak-seung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-05-21.

SEMICONDUCTOR DEVICE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME

Номер патента: US20210202340A1. Автор: HUANG YU-YUAN,Yu Tsung-Kai,Wang Chen-Hsiao,Ho Kai-Kuang,Tang Kuang-Hui. Владелец: UNITED MICROELECTRONICS CORP.. Дата публикации: 2021-07-01.

Semiconductor device having filler and method of manufacturing the same

Номер патента: US20160190271A1. Автор: Young-Joon Park,Jung-Gun You,Ji-Yong HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-06-30.

SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20170186752A1. Автор: CHOI Hoon-Sang,JEONG Hyeok-Jin,LIM Jung-Kun,TAK Young-Mo,HAN Sung-Kil. Владелец: . Дата публикации: 2017-06-29.

SEMICONDUCTOR DEVICES HAVING SILICIDE AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20160197074A1. Автор: YOU Junggun,Lee ChoongHo,HSU WEI-HUA,LEE Hyungjong. Владелец: . Дата публикации: 2016-07-07.

SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS FOR MANUFACTURING THE SAME

Номер патента: US20160197136A1. Автор: OH Se Hoon,KIM Younsoo,PARK Gyu-hee,CHO Youn-joung,CHOI Yunjung,Park Seongyul,Cho Chin Moo,Choi Jae Hyoung. Владелец: . Дата публикации: 2016-07-07.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180190553A1. Автор: LIN TSUNG-YU,Hsu Chung-Wei,Wang Pei-Yu. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-07-05.

STACKED SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS OF MANUFACTURING THE SAME

Номер патента: US20140284808A1. Автор: HASEBE Kazuhide,KUROKAWA Masaki,OBU Tomoyuki. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2014-09-25.

SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20190189615A1. Автор: CHOI Hoon-Sang,JEONG Hyeok-Jin,LIM Jung-Kun,TAK Young-Mo,HAN Sung-Kil. Владелец: . Дата публикации: 2019-06-20.

Integrated Semiconductor Device And Wafer Level Method Of Fabricating The Same

Номер патента: US20160204083A1. Автор: Chu Chia-Hua,Cheng Chun-Wen,Kalnitsky Alexander,Chang Kuei-Sung. Владелец: . Дата публикации: 2016-07-14.

SEMICONDUCTOR DEVICE PACKAGE AND THE METHOD OF MANUFACTURING THE SAME

Номер патента: US20210225783A1. Автор: LU Po-Wei,CHIANG Yuan-Feng,CHAN Ya Fang. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2021-07-22.

Semiconductor device including sgt and method for producing the same

Номер патента: US20180197964A1. Автор: Fujio Masuoka,Nozomu Harada. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2018-07-12.

SEMICONDUCTOR DEVICE INCLUDING SPACER AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20200194439A1. Автор: KIM Hyo Sub,KIM Hui Jung,LEE Myeong Dong,CHUN Jin Hwan. Владелец: . Дата публикации: 2020-06-18.

SEMICONDUCTOR DEVICE WITH TRANSISTOR AND METHOD OF FABRICATING THE SAME

Номер патента: US20150221559A1. Автор: KANG Dong-Kyun. Владелец: . Дата публикации: 2015-08-06.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190206843A1. Автор: LIN Yu-Kai,TSAI Yu-Pin,LU Yu-Ting,LYU Li-Hao,TSAI Chieh-Ju,HSIEH Wei-Ming,TSENG Man-Wen. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-07-04.

SEMICONDUCTOR DEVICES HAVING AIRGAPS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20150228660A1. Автор: SIM Jae-hwang,Shin Jinhyun,Seong HoJun. Владелец: . Дата публикации: 2015-08-13.

SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20160225845A1. Автор: Kim Ji-young,LEE Seung-Jun,Cho Young-Seung,SEO Jong-Bom,LEE Jun-Soo,JEONG Hoon,KIM Sung-eui,Kim Chan-Won. Владелец: . Дата публикации: 2016-08-04.

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME

Номер патента: US20190214455A1. Автор: KANG Sang Yeol,LIM Han Jin,HWANG Cheol Seong,CHO Kyo Ho. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-07-11.

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME

Номер патента: US20200212170A1. Автор: PARK Seok Han. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-07-02.

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING AND OPERATING THE SAME

Номер патента: US20150236036A1. Автор: SHIM Keon Soo. Владелец: . Дата публикации: 2015-08-20.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180233643A1. Автор: Lee Yu-Ying,Lai Lu-Ming,Wu Mei-Yi,Chang Yung-Yi. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-08-16.

SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FABRICATING THE SAME

Номер патента: US20150255607A1. Автор: LIM Sun-Me,Ham Ju-Hyeong. Владелец: . Дата публикации: 2015-09-10.

Semiconductor device including capacitor and method of forming the same

Номер патента: US20210296430A1. Автор: Akira Kaneko. Владелец: Micron Technology Inc. Дата публикации: 2021-09-23.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20200243408A1. Автор: LIN TSUNG-YU,Hsu Chung-Wei,Wang Pei-Yu. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2020-07-30.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180254238A1. Автор: Lee Chih-Cheng,TSAI Li Chuan. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-09-06.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20190252305A1. Автор: Cheng-Lin HO,Chih-Cheng LEE,Po-Shu PENG. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-08-15.

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

Номер патента: US20210328139A1. Автор: Yu Shao-Ming,Lin Yu-Chao,Lee Tung-Ying. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2021-10-21.

SEMICONDUCTOR DEVICE, PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер патента: US20200251414A1. Автор: Pan Hsin-Yu,Hsu Sen-Kuei,CHIANG Yi-Che. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2020-08-06.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20200259058A1. Автор: Lee Yu-Ying,Lai Lu-Ming,Wu Mei-Yi,Chang Yung-Yi. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2020-08-13.

Semiconductor Device, and Module and Electronic Appliance Including the Same

Номер патента: US20150287749A1. Автор: Miyake Hiroyuki. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2015-10-08.

SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FABRICATING THE SAME

Номер патента: US20160284837A1. Автор: Xu Yang,Park JaeYoung,Koo Bonyoung,LEE Sunyoung,Lee Byeongchan,KIM Jinbum,Kim Seokhoon,Lee Kwanheum,Lee Choeun,Jung Sujin,KANG Hyunjae,LEE Hanki,Moon Kanghun. Владелец: . Дата публикации: 2016-09-29.

Semiconductor Device With Channelstopper and Method for Producing the Same

Номер патента: US20160293691A1. Автор: Schulze Hans-Joachim,VOSS STEPHAN,Falck Elmar,Pfirsch Frank Dieter. Владелец: . Дата публикации: 2016-10-06.

SEMICONDUCTOR DEVICE INCLUDING TSV AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20200273780A1. Автор: Kim Eun Ji,PARK Sang Jun,LIM Dong Chan,Park Kwang Wuk,Cho Sung Dong,Lee Hak Seung,Lee Dae Suk. Владелец: . Дата публикации: 2020-08-27.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20170294560A1. Автор: CHEN Ying-Chung,CHAN Hsun-Wei,Ho Hsin-Ying,Lai Lu-Ming. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2017-10-12.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190295914A1. Автор: CHEN Chun-Hsiung,CHEN Yung-Chi,CHANG Yung-Hsing. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-09-26.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180315894A1. Автор: LIN TSUNG-YU,CHAN Hsun-Wei,Ho Hsin-Ying. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-11-01.

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20160336311A1. Автор: KIM Jung-Sam. Владелец: . Дата публикации: 2016-11-17.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20170330870A1. Автор: Chen Kuang-Hsiung,Wang Sheng-Ming,Lee Yu-Ying,CHEN Tien-Szu,PENG Yu-Tzu. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2017-11-16.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20200321432A1. Автор: Chen Jing,WEI Jin. Владелец: . Дата публикации: 2020-10-08.

SEMICONDUCTOR DEVICE AND METHODS OF FORMING AND OPERATING THE SAME

Номер патента: US20200328217A1. Автор: Wang Nan. Владелец: . Дата публикации: 2020-10-15.

METHOD FOR DIRECT FORMING STRESSOR, SEMICONDUCTOR DEVICE HAVING STRESSOR, AND METHOD FOR FORMING THE SAME

Номер патента: US20190326178A1. Автор: PAN Samuel C.,Yang Che-Wei,LIN Hao-Hsiung. Владелец: . Дата публикации: 2019-10-24.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190326256A1. Автор: Lin Wen-Hsin,CHANG Yung-Hsing. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-10-24.

SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20160358925A1. Автор: KIM Myeong-cheol,Lee Jin-Wook,Lee Kwan-heum,KIM Do-hyoung,HA Seung-Mo,Bai Keun-Hee,KHANG Dong-Hoon. Владелец: . Дата публикации: 2016-12-08.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20190341368A1. Автор: Hu Ian,Hung Chih-Pin,Huang Chih-Yi,HSIEH Tsun-Lung,WANG Ming-Han. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2019-11-07.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180350626A1. Автор: Chen Kuang-Hsiung,Wang Sheng-Ming,Lee Yu-Ying,CHEN Tien-Szu,PENG Yu-Tzu. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2018-12-06.

SEMICONDUCTOR DEVICE WITH SUPER JUNCTION AND PROCESS FOR THE SAME

Номер патента: US20190355810A1. Автор: Chen Kuan-Yu. Владелец: . Дата публикации: 2019-11-21.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20180374811A1. Автор: Wang Sheng-Ming,CHEN Tien-Szu,Yang Chung-Chieh. Владелец: . Дата публикации: 2018-12-27.

SEMICONDUCTOR DEVICE, PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер патента: US20220359382A1. Автор: Pan Hsin-Yu,Hsu Sen-Kuei,CHIANG Yi-Che. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2022-11-10.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20220373670A1. Автор: Yu Yuanhao,LIN Chai-Chi,WU WEI-FAN,CHEN Hong Jie,YU Chung Ju. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2022-11-24.

equipment for manufacturing semiconductor device and seasoning process optimization method of the same

Номер патента: KR101794069B1. Автор: 박상욱,백계현,성금중,김용진. Владелец: 삼성전자주식회사. Дата публикации: 2017-12-04.

Semiconductor devices having terminals and methods for fabricating the same

Номер патента: KR102067155B1. Автор: 유봉근. Владелец: 삼성전자주식회사. Дата публикации: 2020-01-16.

Semiconductor device and method for forming pattern of the same

Номер патента: KR100819673B1. Автор: 김서민. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-04-04.

Semiconductor devices including capacitors and methods for manufacturing the same

Номер патента: KR102253595B1. Автор: 조윤정,박규희,김윤수,오세훈,박성율,조진무,최윤정,최재형. Владелец: 삼성전자주식회사. Дата публикации: 2021-05-20.

Control method for semiconductor device manufacturing process and control system for the same process

Номер патента: KR100640667B1. Автор: 황진호,한주철. Владелец: 삼성전자주식회사. Дата публикации: 2006-11-01.

Semiconductor device including spacer and method of manufacturing the same

Номер патента: KR102476141B1. Автор: 김희중,전진환,김효섭,이명동. Владелец: 삼성전자주식회사. Дата публикации: 2022-12-09.

Semiconductor device having supporters and method of fabricating the same

Номер патента: KR102304926B1. Автор: 김봉수,김용관,장세명,황유상,최재형,김경은. Владелец: 삼성전자 주식회사. Дата публикации: 2021-09-24.

Semiconductor device having finfet and method of forming the same

Номер патента: KR100618904B1. Автор: 정태영,이규현,김용성,이주용. Владелец: 삼성전자주식회사. Дата публикации: 2006-09-01.

Semiconductor device having thin film transistor & the manufacturing the same

Номер патента: KR960012168B1. Автор: 다케오 무라가시. Владелец: 시키모리야. Дата публикации: 1996-09-16.

Method of forming contact in semiconductor device and fabrication method of pMOSFET using the same

Номер патента: KR100458086B1. Автор: 손용선. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-11-26.

Semiconductor device of sip and method of fabricating the same

Номер патента: KR100769144B1. Автор: 이한춘. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2007-10-22.

Method for manufacturing a semiconductor device, photolithography mask and method for manufacturing the same

Номер патента: KR100395048B1. Автор: 마쯔누마다께시. Владелец: 미쓰비시덴키 가부시키가이샤. Дата публикации: 2003-08-19.

SOI structure semiconductor device with recess and method of manufacturing the same

Номер патента: JP4754176B2. Автор: 志永 金,珍俊 朴. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-24.

Semiconductor device isolation structure and method of forming the same

Номер патента: JP3844896B2. Автор: コァン グ ナ. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-11-15.

Semiconductor device having stressor and method of fabricating the same

Номер патента: KR102224849B1. Автор: 박재영,이한기,구본영,김석훈,김진범,이관흠,이병찬,이초은,정수진,이선영,허양,강현재,문강훈. Владелец: 삼성전자주식회사. Дата публикации: 2021-03-08.

Semiconductor device having stressor and method of fabricating the same

Номер патента: KR102374108B1. Автор: 김도형,김명철,이관흠,강동훈,이진욱,배근희,하승모. Владелец: 삼성전자주식회사. Дата публикации: 2022-03-14.

Semiconductor Device including Resistor and Method of Fabricating the same

Номер патента: KR101616972B1. Автор: 김건수,신진현,심재황,박윤문. Владелец: 삼성전자주식회사. Дата публикации: 2016-04-29.

Semiconductor device using interdiffusion and method for manufacturing the same

Номер патента: KR102045989B1. Автор: 김형준,김상현,김한성,김성광,임형락. Владелец: 한국과학기술연구원. Дата публикации: 2019-11-18.

Semiconductor device and lead frame used for assembling the same

Номер патента: JPS5961950A. Автор: Tomio Yamada,富男 山田,Akiro Hoshi,Akira Matsuura,彰 松浦,星　彰郎. Владелец: HITACHI LTD. Дата публикации: 1984-04-09.

Semiconductor device having bump and method of forming the same

Номер патента: KR102462504B1. Автор: 김효주,박병률,박연상,최주일,아츠시 후지사키,서주빈. Владелец: 삼성전자주식회사. Дата публикации: 2022-11-02.

Method for forming triple gate of semiconductor device and triple gate of semiconductor for the same

Номер патента: KR101016349B1. Автор: 차한섭. Владелец: 매그나칩 반도체 유한회사. Дата публикации: 2011-02-22.

equipment for manufacturing semiconductor device analyzed layered media dimension and used the same

Номер патента: KR101443058B1. Автор: 김지혜,전충삼,류관우,박장익,윤소연,박환식,사공정. Владелец: 삼성전자주식회사. Дата публикации: 2014-09-24.

Method for manufacturing a semiconductor device, photolithography mask and method for manufacturing the same

Номер патента: KR20010110637A. Автор: 마쯔누마다께시. Владелец: 다니구찌 이찌로오, 기타오카 다카시. Дата публикации: 2001-12-13.

Semiconductor device and method for forming silicide of the same

Номер патента: KR100258001B1. Автор: 김상용. Владелец: 아남반도체주식회사. Дата публикации: 2000-06-01.

Semiconductor device and methods of manufacturing and operating the same

Номер патента: KR101490109B1. Автор: 임지운,홍승훈,명성,이민백. Владелец: 재단법인서울대학교산학협력재단. Дата публикации: 2015-02-12.

method of forming gate oxide layer in semiconductor device and method of gate electrode of the same

Номер патента: KR100505068B1. Автор: 박상진,이우성,한재종. Владелец: 삼성전자주식회사. Дата публикации: 2005-07-29.

Semiconductor device with fuse and method for manufacturing the same

Номер патента: KR100998950B1. Автор: 김범석. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2010-12-09.

Memory Semiconductor Device and Methods of Fabricating and Operating the Same

Номер патента: KR101759926B1. Автор: 김지영,홍진우,한정희,박용직,왕캉엘. Владелец: 더 리전츠 오브 더 유니버시티 오브 캘리포니아. Дата публикации: 2017-07-21.

Semiconductor device having capacitor and method of forming the same

Номер патента: KR100673015B1. Автор: 홍창기,심우관,한정남,오정민,박임수. Владелец: 삼성전자주식회사. Дата публикации: 2007-01-24.

Resin-sealed semiconductor device and lead frame used for manufacturing the same

Номер патента: JP3336328B2. Автор: 正親 増田,昭彦 岩谷. Владелец: HITACHI LTD. Дата публикации: 2002-10-21.

Semiconductor device, semiconductor substrate and method of forming the same

Номер патента: TWI605552B. Автор: 薛芳昌,林恆光. Владелец: 新唐科技股份有限公司. Дата публикации: 2017-11-11.

semiconductor device has Step gate and fabricating method the same

Номер патента: KR100755058B1. Автор: 이정숙,은병수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-09-06.

Vertical semiconductor devices using nanowires and method of manufacturing the same

Номер патента: KR100666187B1. Автор: 이정호,좌용호. Владелец: 학교법인 한양학원. Дата публикации: 2007-01-09.

Semiconductor devices having capacitors and methods of fabricating the same

Номер патента: KR100560803B1. Автор: 주흥진. Владелец: 삼성전자주식회사. Дата публикации: 2006-03-13.

Semiconductor device package and light irradiation apparatus including the same

Номер патента: KR20190127218A. Автор: 오정훈. Владелец: 엘지이노텍 주식회사. Дата публикации: 2019-11-13.

Fuse of semiconductor device and method for formig the using the same

Номер патента: KR101129772B1. Автор: 김형규. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2012-04-13.

Cluster tool for fabricating a semiconductor device and thin film forming method using the same

Номер патента: KR100808870B1. Автор: 이창재. Владелец: 주성엔지니어링(주). Дата публикации: 2008-03-03.

SEMICONDUCTOR DEVICE WITH CAPACITOR AND METHOD FOR FORMING THE SAME

Номер патента: US20230009279A1. Автор: KUO Fu-Chiang. Владелец: . Дата публикации: 2023-01-12.

A metal line of semiconductor device and A method for forming of the same

Номер патента: KR100430680B1. Автор: 김형준. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-05-10.

Semiconductor device with STI and method for fabricating the same

Номер патента: KR100833180B1. Автор: 이인정. Владелец: 삼성전자주식회사. Дата публикации: 2008-05-28.

Resin-sealed semiconductor device and liquid crystal display module using the same

Номер патента: JP3441412B2. Автор: 誠一 山本,幹 藤▲吉▼. Владелец: Sharp Corp. Дата публикации: 2003-09-02.

Semiconductor device and metal line fabrication method of the same

Номер патента: US7994541B2. Автор: Jong Soon Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-08-09.

Semiconductor device having staggered structure, method of manufacturing the same, and electronic apparatus

Номер патента: CN111584486B. Автор: 朱慧珑,张永奎,艾学正. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2022-07-08.

substrate of mounting a semiconductor device for packaging and method of forming the same

Номер патента: KR100575885B1. Автор: 하성권. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-05-03.

Multi-chip semiconductor device having leads and method for fabricating the same

Номер патента: TWI369774B. Автор: Chien Ping Huang,Chung Lun Liu,Chin Huang Chang,Chang Yueh Chan,Chih Ming Huang. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2012-08-01.

Resin-sealed semiconductor device and liquid crystal display module containing the same

Номер патента: DE60037383T2. Автор: Seiichi Kashihara-shi Yamamoto,Miki Takatsuki-shi Fujiyoshi. Владелец: Sharp Corp. Дата публикации: 2008-12-04.

Semiconductor device having resistor and method of fabricating the same

Номер патента: KR20050119912A. Автор: 신진현. Владелец: 삼성전자주식회사. Дата публикации: 2005-12-22.

Semiconductor device and massive data storage system including the same

Номер патента: KR20220057834A. Автор: 김지원,황성민,임준성,성석강,안재호. Владелец: 삼성전자주식회사. Дата публикации: 2022-05-09.

Semiconductor device having staggered structure, method of manufacturing the same, and electronic apparatus

Номер патента: CN111584486A. Автор: 朱慧珑,张永奎,艾学正. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-08-25.

Memory semiconductor device and methods of fabricating and operating the same

Номер патента: KR20110010045A. Автор: 김지영,홍진우,한정희,박용직,왕캉엘. Владелец: 더 리전츠 오브 더 유니버시티 오브 캘리포니아. Дата публикации: 2011-01-31.

Semiconductor device having capacitor and method of manufacturing the same

Номер патента: US20040155273A1. Автор: Masahiko Matsumoto,Takashi Yoshitomi. Владелец: Takashi Yoshitomi. Дата публикации: 2004-08-12.

Semiconductor device with capacitor and method of forming the same

Номер патента: KR100508094B1. Автор: 임재순,김기철,김성태,최한메,김영선,남갑진,권종완. Владелец: 삼성전자주식회사. Дата публикации: 2005-08-17.

Semiconductor device and method for forming pattern in the same

Номер патента: US7776747B2. Автор: Cheol Kyu Bok,Keun Do Ban,Jun Hyeub Sun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-08-17.

Semiconductor device wiring structure and method of manufacturing the same

Номер патента: JP2985692B2. Автор: 邦子 宮川. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-12-06.

Semiconductor device packaging assembly and method for manufacturing the same

Номер патента: TW454314B. Автор: Shr-Guan Chen,Jeng-Lu Shiu,Guang-Han Lin,Yan Man Tsui. Владелец: Gen Semiconductor Of Taiwan Lt. Дата публикации: 2001-09-11.

Semiconductor devices having fuses and methods of forming the same

Номер патента: US20090184391A1. Автор: Jong-Kyu Kim,Hyun-Chul Yoon,Jang-Bin Yim,Sang-Dong Kwon,Sung-Gil Choi. Владелец: Sung-Gil Choi. Дата публикации: 2009-07-23.

Integrated semiconductor device and wafer level method of fabricating the same

Номер патента: US8895360B2. Автор: Chia-Hua Chu,Chun-Wen Cheng,Alex Kalnitsky,Kuei-Sung CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-11-25.

Semiconductor device with fuse and method of fabricating the same

Номер патента: US20070102785A1. Автор: Ki-Jae Hur. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-05-10.

Compound semiconductor device and method for controlling characteristics of the same

Номер патента: US6504185B2. Автор: Nobusuke Yamamoto. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-01-07.

SEMICONDUCTOR DEVICE Cu WIRING AND METHOD FOR MANUFACTURING THE SAME

Номер патента: WO2008065925A1. Автор: Hirotaka Ito,Takashi Onishi,Masao Mizuno,Mikako Takeda. Владелец: KABUSHIKI KAISHA KOBE SEIKO SHO. Дата публикации: 2008-06-05.

Semiconductor device comprising Graphene and method of manufacturing the same

Номер патента: KR101718961B1. Автор: 이성훈,이재홍,이재호,신형철,서순애,허진성,정현종,양희준. Владелец: 서울대학교산학협력단. Дата публикации: 2017-03-23.

Semiconductor device having transistor and method of manufacturing the same

Номер патента: US20030197229A1. Автор: Young-Pil Kim,Byeong-Yun Nam,Beom-jun Jin. Владелец: Byeong-Yun Nam. Дата публикации: 2003-10-23.

Semiconductor device, image scanner and method of manufacturing the same

Номер патента: DE69325065T2. Автор: Tetsuro Nakamura,Masahiro Nakagawa,Shinji Fujiwara,Eiichiro Tanaka. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1999-10-28.

Semiconductor device, and method and program for designing the same

Номер патента: US6795956B2. Автор: Toru Hokari. Владелец: Seiko Epson Corp. Дата публикации: 2004-09-21.

Semiconductor device package structure and forming method of the same

Номер патента: TWI533412B. Автор: 楊文焜. Владелец: 金龍國際公司. Дата публикации: 2016-05-11.

Semiconductor Devices Semiconductor Pillars and Method of Fabricating the Same

Номер патента: US20110039381A1. Автор: Jong-wook Lee,Yong-Hoon Son,Jong-Hyuk Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-02-17.

Semiconductor Device And Method For Forming Pattern In The Same

Номер патента: US20080160763A1. Автор: Cheol Kyu Bok,Keun Do Ban,Jun Hyeub Sun. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-07-03.

Electric field control type semiconductor device of SiC and method of producing the same

Номер патента: JP2000507394A. Автор: ハリス，クリストファー,バコウスキイ，ミエテク,グスタフソン，ウルフ,アンデルソン，マッツ. Владелец: エービービー リサーチ リミテッド. Дата публикации: 2000-06-13.

Stacked semiconductor device, and method and apparatus of manufacturing the same

Номер патента: US9343292B2. Автор: Kazuhide Hasebe,Masaki Kurokawa,Tomoyuki OBU. Владелец: Tokyo Electron Ltd. Дата публикации: 2016-05-17.

apparatus for testing semiconductor device package and multi-level pusher used the same

Номер патента: KR101398632B1. Автор: 이영철. Владелец: 삼성전자주식회사. Дата публикации: 2014-05-22.

Semiconductor device packaging assembly and method for manufacturing the same

Номер патента: US20020000647A1. Автор: Max Chen,C. Hsu,K. Lin,Yan-Man Tsui. Владелец: Individual. Дата публикации: 2002-01-03.

Semiconductor device package structure and forming method of the same

Номер патента: TW201208004A. Автор: Wen-Kun Yang. Владелец: King Dragon Internat Inc. Дата публикации: 2012-02-16.

Semiconductor device package and a method of manufacturing the same

Номер патента: TWI715758B. Автор: 陳盈仲,何信穎,詹勳偉,賴律名. Владелец: 日月光半導體製造股份有限公司. Дата публикации: 2021-01-11.

Semiconductor device, semiconductor package and method for making the same

Номер патента: TWI529880B. Автор: 楊秉豐,蕭友享,李長祺. Владелец: 日月光半導體製造股份有限公司. Дата публикации: 2016-04-11.

Power semiconductor device, and method and apparatus for manufacturing the same

Номер патента: JP2011082383A. Автор: Yasushi Nakajima,泰 中島,Tsuneo Komatsu,恒雄 小松. Владелец: Mitsubishi Electric Corp. Дата публикации: 2011-04-21.

Semiconductor device having capacitors and method of manufacturing the same

Номер патента: US20040188747A1. Автор: Takashi Yoshitomi. Владелец: Takashi Yoshitomi. Дата публикации: 2004-09-30.

Semiconductor device packaging assembly and method for manufacturing the same

Номер патента: US20030205792A1. Автор: Max Chen,C. Hsu,K. Lin,Yan-Man Tsui. Владелец: Lin K. H.. Дата публикации: 2003-11-06.

Semiconductor device including nanocrystals and methods of manufacturing the same

Номер патента: WO2009103124A1. Автор: Paul Mulvaney,Benjamin Mashford. Владелец: THE UNIVERSITY OF MELBOURNE. Дата публикации: 2009-08-27.

Semiconductor device with FinFET and method of fabricating the same

Номер патента: US7972914B2. Автор: Sung-min Kim,Eun-Jung Yun,Min-Sang Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-05.

Semiconductor device array substrate and manufacturing method for the same

Номер патента: KR100693236B1. Автор: 가와무라데쯔야. Владелец: 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드. Дата публикации: 2007-03-12.

Semiconductor device having supporters and method of fabricating the same

Номер патента: KR20170031469A. Автор: 김봉수,김용관,장세명,황유상,최재형,김경은. Владелец: 삼성전자주식회사. Дата публикации: 2017-03-21.

Semiconductor device and liquid crystal display apparatus using the same

Номер патента: US5851440A. Автор: Takeshi Tanaka,Yoshiro Mikami. Владелец: HITACHI LTD. Дата публикации: 1998-12-22.

Semiconductor device embedded structure and method for fabricating the same

Номер патента: TWI241007B. Автор: Shih-Ping Hsu. Владелец: Phoenix Prec Technology Corp. Дата публикации: 2005-10-01.

Semiconductor device and metal line fabrication method of the same

Номер патента: US7575998B2. Автор: Jong Soon Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-08-18.

Semiconductor device and a logical circuit formed of the same

Номер патента: US4143390A. Автор: Hideo Noguchi. Владелец: Tokyo Shibaura Electric Co Ltd. Дата публикации: 1979-03-06.

Semiconductor device having JFET and method for manufacturing the same

Номер патента: US20110156052A1. Автор: Yuuichi Takeuchi,Naohiro Sugiyama,Rajesh Kumar Malhan. Владелец: Denso Corp. Дата публикации: 2011-06-30.

Semiconductor devices with nanowires and methods for fabricating the same

Номер патента: US10847515B2. Автор: Sang Yong Kim,Sang Jin HYUN,Jae Jung Kim,Young Suk CHAI,Hoon Joo NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-24.

Compound semiconductor device and method for controlling characteristics of the same

Номер патента: KR100370987B1. Автор: 노부스께 야마모또. Владелец: 오끼 덴끼 고오교 가부시끼가이샤. Дата публикации: 2003-07-16.

Semiconductor device having capacitor and method of fabricating the same

Номер патента: US20100187654A1. Автор: Chang-ki Hong,Jeong-Nam Han,Woo-gwan Shim,Jung-min Oh,Im-soo Park. Владелец: Jeong-Nam Han. Дата публикации: 2010-07-29.

Semiconductor device comprising capacitor and method of fabricating the same

Номер патента: US7816204B2. Автор: Yoshinori Tanaka,Masahiro Shimizu,Hideaki Arima. Владелец: Renesas Electronics Corp. Дата публикации: 2010-10-19.

semiconductor device having fuse and method for fabricating the same

Номер патента: KR100332456B1. Автор: 고장만. Владелец: 윤종용. Дата публикации: 2002-04-13.

Separation discharge for semiconductor device, and method for transferring semiconductor using the same

Номер патента: KR100902132B1. Автор: 김태기,김선오,정태숙. Владелец: 세크론 주식회사. Дата публикации: 2009-06-10.

Semiconductor device including recess and method of fabricating the same

Номер патента: CN110828386A. Автор: M·施塔德勒,T·贝默尔. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-02-21.

Semiconductor device having transistor and method for manufacturing the same

Номер патента: KR101413651B1. Автор: 장동열. Владелец: 삼성전자주식회사. Дата публикации: 2014-07-01.

Vertical semiconductor device with conductive layer, method of manufacturing the same, and electronic apparatus

Номер патента: CN111668294A. Автор: 朱慧珑. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-09-15.

Semiconductor device having resistor and method of forming the same

Номер патента: KR100672939B1. Автор: 이준희,최정달,허성회,박진택. Владелец: 삼성전자주식회사. Дата публикации: 2007-01-24.

Semiconductor device with nanostructures and methods of forming the same

Номер патента: US10269990B2. Автор: Chih-Fei Lee,Fu-Cheng Chang,Chia-Pin Cheng,Hsin-Hsiang TSENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-23.

Method for forming semiconductor device and the method for forming using the same

Номер патента: KR101076779B1. Автор: 우재용. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2011-10-26.

Semiconductor device, reticle used in fabricating method for the same and fabrication method thereof

Номер патента: US8164185B2. Автор: Young-Woo Cho,Sang-Hoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-24.

Semiconductor device having passing gate and method of the same

Номер патента: KR102180049B1. Автор: 장태수,계정섭. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2020-11-18.

Semiconductor device and multilayered lead frame used for the same

Номер патента: WO1997030478A1. Автор: Amane Mochizuki,Seiji Kondo,Yuji Hotta,Michie Sakamoto,Shinichi Oizumi. Владелец: NITTO DENKO CORPORATION. Дата публикации: 1997-08-21.

Organic semiconductor device using photosynthesis and method for comprising the same

Номер патента: KR101991567B1. Автор: 임은주. Владелец: 단국대학교 산학협력단. Дата публикации: 2019-06-20.

Semiconductor device using graphene and method for manufacturing the same

Номер патента: JP4669957B2. Автор: 英文 日浦,哲也 多田,敏彦 金山,史行 二瓶. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2011-04-13.

Semiconductor device having capacitor and method of manufacturing the same

Номер патента: CN110649000A. Автор: 陈德安,吴伟成,邱德馨,林孟汉. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-03.

Semiconductor device testing contactor and method of manufacturing the same

Номер патента: JP4323055B2. Автор: 茂幸 丸山,浩久 松木. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2009-09-02.

Semiconductor devices with graphene nanoribbons and method for the same

Номер патента: CN104576315A. Автор: R·A·维加,E·阿尔普泰金,V·Y·萨德塞. Владелец: International Business Machines Corp. Дата публикации: 2015-04-29.

Multi-chip semiconductor device having leads and method for fabricating the same

Номер патента: US20080283982A1. Автор: Chih-Ming Huang,Chien-Ping Huang,Chin-Huang Chang,Chung-Lun Liu,Chang-Yueh Chan. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2008-11-20.

Optical semiconductor device package and optical semiconductor module having the same

Номер патента: US6489677B2. Автор: Takahiro Okada,Toshio Kimura. Владелец: Furukawa Electric Co Ltd. Дата публикации: 2002-12-03.

Semiconductor device and method for manufacturing substrate of the same

Номер патента: KR100647096B1. Автор: 모리오까무네하루,이이지마마꼬또,누끼와마사루,우에노세이지. Владелец: 후지쯔 가부시끼가이샤. Дата публикации: 2006-11-17.

Semiconductor device and power switching drive system using the same

Номер патента: JP3804375B2. Автор: 洋典 井上,正樹 白石,昭浩 宮内,光造 坂本,孝純 大柳,篤雄 渡辺,睦宏 森. Владелец: HITACHI LTD. Дата публикации: 2006-08-02.

Semiconductor device including edge bond pads assemblies including the same and related methods

Номер патента: US20030003689A1. Автор: Walter Moden,Warren Farnworth,Larry Kinsman. Владелец: Moden Walter L.. Дата публикации: 2003-01-02.

Semiconductor device in capacitor and method for fabricating the same

Номер патента: KR100857853B1. Автор: 김세현. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-09-10.

Optical semiconductor device package and optical semiconductor module having the same

Номер патента: US20020027231A1. Автор: Takahiro Okada,Toshio Kimura. Владелец: Furukawa Electric Co Ltd. Дата публикации: 2002-03-07.

Semiconductor device having resistor and method of fabricating the same

Номер патента: US20060118885A1. Автор: Du-Heon Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-06-08.

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

Номер патента: US10957602B2. Автор: Samuel C. Pan,Hao-Hsiung Lin,Che-Wei Yang. Владелец: National Taiwan University NTU. Дата публикации: 2021-03-23.

Semiconductor device, integrated circuit and method of manufacturing the same

Номер патента: US20230065619A1. Автор: Chia-Jung Yu,Pin-Cheng HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Method of forming contact holes in semiconductor devices and method of forming capacitors using the same

Номер патента: TWI265592B. Автор: Dong-Hyun Kim,Yong-Tae Cho,Bong-Ho Choi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-11-01.

Semiconductor device, memory cell and method of forming the same

Номер патента: TW202310335A. Автор: 林毓超,邱榮標,涂元添. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2023-03-01.

Semiconductor Device for DRAM and Method of Manufacturing the Same

Номер патента: KR20220153483A. Автор: 박인성,박영욱,김선용. Владелец: 박영욱. Дата публикации: 2022-11-18.

Method of forming fine patterns in semiconductor device and method of forming gate using the same

Номер патента: US20060148226A1. Автор: Ki Kim. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2006-07-06.

Semiconductor devices with Magnetkerninduktoren and method for producing the same

Номер патента: DE102011084014B4. Автор: Wolfgang Klein,Carsten Ahrens,Alexander Glas,Renate Hofmann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-29.

Semiconductor device, semiconductor structure, and methods for forming the same

Номер патента: TW202135311A. Автор: 育佳 楊,宋學昌,劉威民. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2021-09-16.

Method of forming contact holes in semiconductor devices and method of forming capacitors using the same

Номер патента: US20020197813A1. Автор: Dong Kim,Bong Choi,Yong Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2002-12-26.

Semiconductor device having meandering structure, method for manufacturing the same, and electronic apparatus

Номер патента: CN111554747A. Автор: 朱慧珑. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-08-18.

Semiconductor device, and method and apparatus for manufacturing the same

Номер патента: US8633602B2. Автор: Atsushi Yoshimura,Hideko Mukaida,Nobuhito Suzuya. Владелец: Toshiba Corp. Дата публикации: 2014-01-21.

Semiconductor device, and module and electronic appliance including the same

Номер патента: US11916088B2. Автор: Hiroyuki Miyake. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-02-27.

Semiconductor device, memory array and method of forming the same

Номер патента: US11856779B2. Автор: Chung-Te Lin,Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20230057113A1. Автор: Ying-Ching Shih,Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-23.

Semiconductor device package and a method of manufacturing the same

Номер патента: US11908781B2. Автор: Chun-Hung Yeh,Wei-Chih CHO,Tsung-Wei LU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-20.

Semiconductor device including MEMS and method of manufacturing the same

Номер патента: EP2060533B1. Автор: Tsukasa Fujimori,Yasushi Goto,Heewon JEONG,Kiyoko Yamanaka. Владелец: HITACHI LTD. Дата публикации: 2014-06-04.

Semiconductor device, semiconductor package and method of manufacturing the same

Номер патента: US11804472B2. Автор: Tae-Seong Kim,Kwang-jin Moon,Dong-Chan Lim,Dae-suk LEE,Hak-seung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Lead frame having semiconductor device mounted thereon and method for fabricating the same

Номер патента: SG113415A1. Автор: Karube Yoshio. Владелец: NEC Electronics Corp. Дата публикации: 2005-08-29.

Semiconductor device, memory cell and method of forming the same

Номер патента: US20230397439A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-07.

Semiconductor device, memory cell and method of forming the same

Номер патента: US20220037399A1. Автор: Tung-Ying Lee,Yuan-Tien Tu,Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-03.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20220359382A1. Автор: Sen-Kuei HSU,Hsin-Yu Pan,Yi-Che CHIANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20210043564A1. Автор: Sen-Kuei HSU,Hsin-Yu Pan,Yi-Che CHIANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-02-11.

Semiconductor device, semiconductor package and method of manufacturing the same

Номер патента: US20210183822A1. Автор: Tae-Seong Kim,Kwang-jin Moon,Dong-Chan Lim,Dae-suk LEE,Hak-seung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-17.

Semiconductor device, memory array and method of forming the same

Номер патента: US20210375885A1. Автор: Chung-Te Lin,Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20240014162A1. Автор: Ying-Ching Shih,Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-11.

Semiconductor device protective structure and method for fabricating the same

Номер патента: TWI279892B. Автор: Chih-Wei Lin,Wen-Kun Yang,Jui-Hsien Chang,Kuang-Chi Chao,Cheng-hsien Chiu. Владелец: Advanced Chip Eng Tech Inc. Дата публикации: 2007-04-21.

Semiconductor device mounting substrate and method for manufacturing the same

Номер патента: TWI605553B. Автор: Shigeru Hosomomi. Владелец: SH Materials Co Ltd. Дата публикации: 2017-11-11.

Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same

Номер патента: TW200416794A. Автор: Hiroyuki Ogawa,Yoshitaka Yamamoto,Yoshinobu Kimura,Masato Hiramatsu,Masayuki Jyumonji,Matsumura Masakiyo. Владелец: Adv Lcd Tech Dev Ct Co Ltd. Дата публикации: 2004-09-01.

METHOD FOR FORMING THIN FILM AND METHOD FOR FABRICATING ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY USING THE SAME

Номер патента: US20150079711A1. Автор: Prushinskiy Valeriy,KAPLAN Leonid,Park Ji-Ryun,Park Hee-Sang,Lee Won-Baek. Владелец: . Дата публикации: 2015-03-19.

FILLING FILM AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME

Номер патента: US20140345796A1. Автор: Kim Jeong-Su. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2014-11-27.

Method of forming a microcrystalline silicon thin film and method of fabricating a thin-film silicon solar cell using the same

Номер патента: KR100387982B1. Автор: 이창현,임굉수. Владелец: 한국과학기술원. Дата публикации: 2003-06-18.

Film for anisotropic conductivity and electronic circuits and devices using the film

Номер патента: WO2007021070A1. Автор: Jong Hwa Lee,Hyun Young Kim,Jeong Ku Kang,Jung Sik Choi,Ki Sung Jung. Владелец: CHEIL INDUSTRIES INC.. Дата публикации: 2007-02-22.

Thin film etching method and semiconductor device fabrication using same

Номер патента: SG153733A1. Автор: Cong Hai,HU Xiang,Zhou Mei Sheng,Pradeep Yelehanka. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2009-07-29.

Method for forming lithium metal and inorganic material composite thin film, and method for prelithiating negative electrode of lithium secondary battery using the same

Номер патента: CN110574191B. Автор: 禹相昱,宋俊赫,蔡午秉,姜允雅,金銀卿. Владелец: LG Chem Ltd. Дата публикации: 2022-05-13.

Anisotropic conductive film and method and composition for making the same

Номер патента: US20230357580A1. Автор: Khang Trong Nguyen,Thuat Tran Nguyen. Владелец: Mk High Technology Joint Stock Co. Дата публикации: 2023-11-09.

Anisotropic conductive film and manufacturing method thereof

Номер патента: US20190067234A1. Автор: Yasushi Akutsu,Kenichi SARUYAMA. Владелец: Dexerials Corp. Дата публикации: 2019-02-28.

Joined structure, method for producing the same, and anisotropic conductive film used for the same

Номер патента: US20100085720A1. Автор: Toshiyuki Shudo. Владелец: Sony Chemical and Information Device Corp. Дата публикации: 2010-04-08.

Anisotropic conductive film and display device including same

Номер патента: US20230290751A1. Автор: Joo Nyung Jang. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-09-14.

Anisotropic conductive film

Номер патента: US20190304943A1. Автор: Kenichi Hirayama,Reiji Tsukao,Koji Ejima. Владелец: Dexerials Corp. Дата публикации: 2019-10-03.

Display device including anisotropic conductive film and method of manufacturing display device

Номер патента: US11864437B2. Автор: Joo-Nyung Jang. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-01-02.

Anisotropic conductive material, electronic device including anisotropic conductive material, and method of manufacturing electronic device

Номер патента: US09831211B2. Автор: Wonsuk Chang,Kunmo Chu,Chanmoon Chung. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2017-11-28.

Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same

Номер патента: US20230203655A1. Автор: Sang Ick Lee,Sang Yong Jeon,Yong Hee Kwone,Young Jae Im,Tae Seok Byun,Sang Chan Lee. Владелец: DNF Co Ltd. Дата публикации: 2023-06-29.

Semiconductor device and method for manufacturing the same

Номер патента: US7113661B2. Автор: Yasuyuki Arai,Mai Akiba. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2006-09-26.

Cleaning composition for mold for molding semiconductor device and method of cleaning mold using the same

Номер патента: TW470775B. Автор: Kouichi Takashima. Владелец: Nitto Denko Corp. Дата публикации: 2002-01-01.

Functional film and method for preparation thereof, and liquid crystal display element using the same and method for preparation thereof

Номер патента: KR100410700B1. Автор: 카즈후미 오가와,타카이키 노무라,타다시 오타게,타카코 타케베. Владелец: 마쯔시다덴기산교 가부시키가이샤. Дата публикации: 2003-12-18.

THIN FILM AND THIN WIRE FROM AN ALUMINUM ALLOY AND METHOD FOR PRODUCING THE SAME

Номер патента: DE4027483A1. Автор: Tsuyoshi Masumoto,Akihisa Inoue,Hitoshi Yamaguchi,Noriaki Matsumoto,Kazuhiko Kita. Владелец: Teikoku Piston Ring Co Ltd. Дата публикации: 1991-03-14.

Anisotropic conductive film and bump, and packaging structure of semiconductor having the same

Номер патента: US20050173785A1. Автор: Seong-Yong Hwang,Ju-Young Yoon,Chun-Ho Song,Weon-Sik Oh,Sung-Lak Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-08-11.

Manufacturing method of anisotropic conductive film and apparatus thereof

Номер патента: US11735333B2. Автор: Zihao GUO. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-08-22.

Anisotropic conductive film and method for manufacturing the same

Номер патента: US09520206B2. Автор: Jung Hyun Lee,Soo Young Ji. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2016-12-13.

Conductive particle, anisotropic conductive film, display device, and method for fabricating the same

Номер патента: US20200183448A1. Автор: Qun Li,Xiao Guo,Huan Ni,Xiaolong Xie,Xinxia ZHANG,Fengzhen LV,Chengpeng Yao,Mingguang Li. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2020-06-11.

Conductive particle, anisotropic conductive film, display device, and method for fabricating the same

Номер патента: US10866613B2. Автор: Qun Li,Xiao Guo,Huan Ni,Xiaolong Xie,Xinxia ZHANG,Fengzhen LV,Chengpeng Yao,Mingguang Li. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2020-12-15.

Contact structure and semiconductor device

Номер патента: US8624253B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-01-07.

Semiconductor device and method for manufacturing the same

Номер патента: US20050082655A1. Автор: Naoto Kusumoto,Hidekazu Takahashi,Hiroki Adachi,Kazuo Nishi,Yuusuke Sugawara,Daiki Yamada,Yoshikazu Hiura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2005-04-21.

Display device and method for bonding the same

Номер патента: US12107073B2. Автор: Zhihua Sun,Xibin Shao,Seungmin Lee,Qiujie Su,Feng Qu,Yanping Liao,Yingmeng MIAO. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2024-10-01.

Anisotropic conductive film structures

Номер патента: US09653425B2. Автор: Bo Zhang,Kuo-Hua Sung,Sang Ha Kim,Cyrus Y. LIU. Владелец: Apple Inc. Дата публикации: 2017-05-16.

Anisotropic conductive film and bump, and packaging structure of semiconductor having the same

Номер патента: US7528486B2. Автор: Seong-Yong Hwang,Ju-Young Yoon,Chun-Ho Song,Weon-Sik Oh,Sung-Lak Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-05-05.

Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure

Номер патента: US09620455B2. Автор: Yaojian Lin,Reza A. Pagaila,Jun Mo Koo. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-04-11.

Display apparatus and method of manufacturing the same

Номер патента: US20210183274A1. Автор: Myoung-ha Jeon. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-06-17.

Anisotropic conductive film (acf) for use in testing semiconductor packages

Номер патента: US20200243405A1. Автор: Hyoung Il Kim. Владелец: Intel Corp. Дата публикации: 2020-07-30.

Electrical connectors using anisotropic conductive films

Номер патента: US5624268A. Автор: Akira Tateishi,Ryu Maeda,Shunsuke Tazai. Владелец: Whitaker LLC. Дата публикации: 1997-04-29.

Display device with improved anisotropic conductive film

Номер патента: US09997487B2. Автор: Ji Hoon Kim,Joon Sam Kim,Kyeong Yeol HEO. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-06-12.

Sequential circuit and semiconductor device

Номер патента: US09939692B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Shinpei Matsuda,Masahiko Hayakawa,Daisuke Matsubayashi,Kouhei Toyotaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-10.

Sequential circuit and semiconductor device

Номер патента: US09494830B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Shinpei Matsuda,Masahiko Hayakawa,Daisuke Matsubayashi,Kouhei Toyotaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-15.

Semiconductor device and method of its manufacturing

Номер патента: RU2503085C1. Автор: Масахико СУЗУКИ,Хирохико НИСИКИ,Такеси ХАРА,Юудзи МИДЗУНО,Есимаса ТИКАМА,Есифуми ОХТА,Тецуя АИТА,Митико ТАКЕИ,Окифуми НАКАГАВА,Есиюки ХАРУМОТО. Владелец: Шарп Кабусики Кайся. Дата публикации: 2013-12-27.

Semiconductor device and semiconductor storage device

Номер патента: US20240322045A1. Автор: Takahiro Fujii,Kotaro Noda,Takanori Akita,Kasumi Okabe. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Package with dielectric or anisotropic conductive (ACF) buildup layer

Номер патента: US09543197B2. Автор: YOSHIHIRO Tomita,Dingying Xu,Chuan Hu. Владелец: Intel Corp. Дата публикации: 2017-01-10.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20190244808A1. Автор: Tetsuya Sakuma. Владелец: Ablic Inc. Дата публикации: 2019-08-08.

Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module

Номер патента: US09443876B2. Автор: Shunpei Yamazaki,Masahiro Katayama,Kenichi Okazaki,Masataka Nakada. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-13.

Anisotropic conductivity connector, conductive paste composition, probe member, wafer inspecting device, and wafer inspecting method

Номер патента: EP1553622A4. Автор: Takeo Hara,Terukazu Kokubo,Koji Seno,Ryoji Setaka. Владелец: JSR Corp. Дата публикации: 2006-05-24.

Led module and method of manufactruring the same

Номер патента: US20110254029A1. Автор: Chih-Chen Lai. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2011-10-20.

Semiconductor device, manufacturing method thereof, module, and electronic device

Номер патента: US09653487B2. Автор: Shunpei Yamazaki,Masahiro Katayama,Kenichi Okazaki,Masataka Nakada. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-16.

Semiconductor device and method of manufacturing the same

Номер патента: US20220093618A1. Автор: Hiroaki Mizushima,Kounosuke TATEISHI. Владелец: Renesas Electronics Corp. Дата публикации: 2022-03-24.

Semiconductor device and semiconductor device structure

Номер патента: US20020096784A1. Автор: Hitoshi Shibue,Koichi Kamikuri. Владелец: Sony Corp. Дата публикации: 2002-07-25.

Manufacturing method of semiconductor device, and semiconductor device

Номер патента: US09428342B2. Автор: Takayuki Nosaka. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-30.

Method of forming pn junction including transition metal dichalcogenide, method of fabricating semiconductor device using the same, and semiconductor device fabricated by the same

Номер патента: US20230245887A1. Автор: Jin-Hong Park,Jin-Hyuk Kim,Sang-Yong Park,Sejin KYUNG. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-08-03.

PMOS transistor of semiconductor device, semiconductor device comprising the same, and method for manufacturing the same

Номер патента: US7436036B2. Автор: Jung Suk Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-10-14.

Manufacturing method of semiconductor device, and semiconductor device

Номер патента: US09673073B2. Автор: Takayuki Nosaka. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-06.

Structure of polymer-matrix conductive film and method for fabricating the same

Номер патента: US20060249834A1. Автор: Yu-Chih Chen,Syh-Yuh Cheng,Ruoh-Huey Uang,Ren-Jan Lin. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2006-11-09.

Composition and methods of forming solder bump and flip chip using the same

Номер патента: US09462736B2. Автор: Yong Sung Eom,Jong Tae Moon,Sangwon OH,Keonsoo JANG. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2016-10-04.

Stack package using anisotropic conductive film (ACF) and method of making same

Номер патента: US20080026507A1. Автор: Sang-Young Kim,Gil-Beag Kim,Yong-Jin Jung,Jun-Soo Han,Hyun-Ik Hwang. Владелец: Individual. Дата публикации: 2008-01-31.

Stack package using anisotropic conductive film (ACF) and method of making same

Номер патента: US7405105B2. Автор: Sang-Young Kim,Gil-Beag Kim,Yong-Jin Jung,Jun-Soo Han,Hyun-Ik Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-29.

Anisotropic conductive film (ACF) including a relfective layer

Номер патента: US09871177B2. Автор: Rong-Chang Liang,Keren Zhang,Jane Sun. Владелец: Trillion Science Inc. Дата публикации: 2018-01-16.

Anisotropic conductive film and manufacturing method thereof

Номер патента: CA2522239C. Автор: Yasuhiro Okuda,Fumihiro Hayashi,Yasuhito Masuda,Tsuyoshi Haga. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-01-04.

Semiconductor device and method of manufacturing the same

Номер патента: US20010033023A1. Автор: Kyoichi Suguro. Владелец: Toshiba Corp. Дата публикации: 2001-10-25.

Semiconductor device and its manufacture

Номер патента: US20020140008A1. Автор: Makoto Yasuda. Владелец: Fujitsu Ltd. Дата публикации: 2002-10-03.

Semiconductor device and its manufacture

Номер патента: US20030107064A1. Автор: Makoto Yasuda. Владелец: Fujitsu Ltd. Дата публикации: 2003-06-12.

Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device

Номер патента: US20060091382A1. Автор: Noboru Mikami,Sei Tsunoda,Hideharu Nobutoki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2006-05-04.

Semiconductor device and method for manufacturing the same

Номер патента: US09947794B2. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Kazuya Hanaoka,Suguru Hondo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-17.

Semiconductor device and method of manufacturing the same

Номер патента: US09768233B1. Автор: Takeshi Takagi,Toshiharu Tanaka,Takeshi Yamaguchi,Natsuki Fukuda,Atsushi Oga,Mutsumi Okajima,Masanori Komura. Владелец: Toshiba Memory Corp. Дата публикации: 2017-09-19.

Methods for fabricating a semiconductor device and semiconductor devices fabricated by the same

Номер патента: US09761603B2. Автор: Jae-Hwang Sim,Joon-Sung LIM,Min-Sung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-12.

Semiconductor device and method for manufacturing the same

Номер патента: US09590109B2. Автор: Hidekazu Miyairi,Shunpei Yamazaki,Kazuya Hanaoka,Suguru Hondo. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-07.

Isolation structure, method for manufacturing the same, and semiconductor device having the structure

Номер патента: US09543188B2. Автор: Huilong Zhu,Huicai Zhong,Haizhou Yin,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-01-10.

Semiconductor device and manufacturing method of the same

Номер патента: US09373723B2. Автор: Tamae Takano,Atsuo Isobe. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-06-21.

Anisotropic conductive film with carbon-based conductive regions and related semiconductor device assemblies and methods

Номер патента: US11881468B2. Автор: Mark E. Tuttle,Eiichi Nakano. Владелец: Micron Technology Inc. Дата публикации: 2024-01-23.

Anisotropic conductive film with carbon-based conductive regions and related semiconductor device assemblies and methods

Номер патента: US20240170435A1. Автор: Mark E. Tuttle,Eiichi Nakano. Владелец: Micron Technology Inc. Дата публикации: 2024-05-23.

Backside vias in semiconductor device

Номер патента: US12132092B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US12112952B2. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Light-emitting device and method for manufacturing the same

Номер патента: US09978981B2. Автор: Akihiro Chida. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-05-22.

Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same

Номер патента: US09711693B2. Автор: Chung Hoon Lee,Dae Sung Kal,Ki Bum Nam. Владелец: Individual. Дата публикации: 2017-07-18.

Light-emitting device and method for manufacturing the same

Номер патента: US09444020B2. Автор: Akihiro Chida. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-13.

Semiconductor device and method for manufacturing the same

Номер патента: US09431545B2. Автор: Toshihiko Saito,Shinya Sasagawa,Motomu Kurata,Akihiro Ishizuka,Junichi Koezuka,Atsuo Isobe,Kazuya Hanaoka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-08-30.

Method for making an anisotropic conductive coating with conductive inserts

Номер патента: US6453553B1. Автор: Patrice Caillat,Claude Massit. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2002-09-24.

Noble Metal-Coated Silver Wire for Ball Bonding and Method for Producing The Same, And Semiconductor Device using Noble Metal-Coated Silver Wire for Ball Bonding and Method for Producing The Same

Номер патента: MY195404A. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Electronics Ind. Дата публикации: 2023-01-19.

Semiconductor device

Номер патента: US12080717B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama,Hideaki Shishido. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-09-03.

Solid-state imaging device and method for manufacturing the same

Номер патента: US20140210033A1. Автор: Shigeru Suzuki,Hisashi Yano,Tetsuya Nakamura,Motonari Katsuno,Gen Okazaki,Akira OODAIRA. Владелец: Panasonic Corp. Дата публикации: 2014-07-31.

Semiconductor device and method of manufacturing the same

Номер патента: US20240162080A1. Автор: Takashi Moriyama,Kiyoshi Endo. Владелец: Renesas Electronics Corp. Дата публикации: 2024-05-16.

Semiconductor device and method of producing the same

Номер патента: US20030197232A1. Автор: Satoshi Kamiyama. Владелец: NEC Corp. Дата публикации: 2003-10-23.

Semiconductor device and method of manufacturing the same

Номер патента: US09853005B2. Автор: Takehiko Maeda,Akira Yajima,Satoshi Itou,Fumiyoshi Kawashiro. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-26.

Semiconductor device

Номер патента: US09806099B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama,Hideaki Shishido. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-31.

Semiconductor device

Номер патента: US09754971B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Daisuke Matsubayashi,Seiko Inoue. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-09-05.

Semiconductor device and method for manufacturing the same

Номер патента: US09728631B2. Автор: Takuya Tsurume. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-08.

Semiconductor package and semiconductor device including the same

Номер патента: US09679874B2. Автор: Jae Choon Kim,Kyol PARK,Chajea JO,Jin-kwon Bae,Jichul Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-13.

Semiconductor device

Номер патента: US09455280B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama,Hideaki Shishido. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-27.

Semiconductor device and method for manufacturing the same

Номер патента: US20060186486A1. Автор: Hirotaka Mori. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-08-24.

Semiconductor device and method for manufacturing the same

Номер патента: US9373676B2. Автор: Wensheng Wang. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2016-06-21.

Semiconductor Device and Method

Номер патента: US20240250019A1. Автор: Ming-Da Cheng,Po-Hao Tsai,Ting-Li Yang,Yung-Han Chuang,Hsueh-Sheng Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Self-aligned etch in semiconductor devices

Номер патента: US12080713B2. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Semiconductor device and method of manufacturing the same

Номер патента: US11646376B2. Автор: Eiji Tsukuda,Katsumi Eikyu. Владелец: Renesas Electronics Corp. Дата публикации: 2023-05-09.

Noble Metal-Coated Silver Wire for Ball Bonding and Method for Producing The Same, And semiconductor device using noble metal-coated silver wire for ball bonding and method for Producing The Same

Номер патента: MY195984A. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Electronics Ind. Дата публикации: 2023-02-27.

Noble metal-coated silver wire for ball bonding and method for producing the same, and semiconductor device using noble metal-coated silver wire for ball bonding and method for producing the same

Номер патента: US20200395330A1. Автор: Jun Chiba,Yuki Antoku,Shota KAWANO. Владелец: Tanaka Denshi Kogyo KK. Дата публикации: 2020-12-17.

Semiconductor device and method for producing the same

Номер патента: US20050156211A1. Автор: Shinichi Imai. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-07-21.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20080272444A1. Автор: Hiroyuki Kitamura. Владелец: Elpida Memory Inc. Дата публикации: 2008-11-06.

Method for manufacturing semiconductor device and semiconductor device

Номер патента: US20170077040A1. Автор: Takeshi Watanabe,Yuusuke Takano. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

Semiconductor device and method for manufacturing the same

Номер патента: US20130122679A1. Автор: Wensheng Wang. Владелец: Fujitsu Ltd. Дата публикации: 2013-05-16.

Semiconductor device and method for producing the same

Номер патента: US7122877B2. Автор: Shinichi Imai. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-10-17.

Self-Aligned Etch in Semiconductor Devices

Номер патента: US20240363626A1. Автор: Cheng-Chi Chuang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device

Номер патента: US09941309B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama,Daisuke Matsubayashi,Hideaki Shishido,Keisuke Murayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-10.

Semiconductor device and manufacturing method of the same

Номер патента: US09837528B2. Автор: Yoshito Nakazawa,Yuji Yatsuda. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-05.

Interconnection structure, fabricating method thereof, and semiconductor device using the same

Номер патента: US09576908B1. Автор: Chi-Wen Liu,Yu-Hung Lin,Horng-Huei Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-21.

Semiconductor device comprising oxide semiconductor film

Номер патента: US09478535B2. Автор: Shunpei Yamazaki,Masahiro Katayama,Yukinori Shima,Ami Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-10-25.

Semiconductor device

Номер патента: US09449996B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama,Daisuke Matsubayashi,Hideaki Shishido,Keisuke Murayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-20.

Anisotropically conductive member and method for producing the same

Номер патента: US20120168218A1. Автор: Atsushi Matsuura,Shinya Suzuki,Akio Uesugi,Yoshinori Hotta,Yusuke Hatanaka,Tadabumi Tomita. Владелец: Fujifilm Corp. Дата публикации: 2012-07-05.

Semiconductor package, method for fabricating the same, and semiconductor device

Номер патента: US7402898B2. Автор: Katsutoshi Shimizu,Tatsuya Hirano,Hisaho Inao. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2008-07-22.

Semiconductor device and method of manufacturing the same

Номер патента: US20030062563A1. Автор: Yoichi Okita. Владелец: Fujitsu Ltd. Дата публикации: 2003-04-03.

Semiconductor device having a capacitor and method of manufacturing the same

Номер патента: US6713798B2. Автор: Yoichi Okita. Владелец: Fujitsu Ltd. Дата публикации: 2004-03-30.

Semiconductor device testing apparatus and semiconductor device manufacturing method using it

Номер патента: US20020033707A1. Автор: Hideo Miura,Masatoshi Kanamaru,Ryuji Kohno,Naoto Ban,Hiroya Shimizu. Владелец: Individual. Дата публикации: 2002-03-21.

Semiconductor device and method for fabricating the same

Номер патента: US20020058390A1. Автор: Shinichi Imai. Владелец: Individual. Дата публикации: 2002-05-16.

Semiconductor device and method for producing the same

Номер патента: US6881998B2. Автор: Shinichi Imai. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2005-04-19.

Semiconductor device and method of manufacturing the same

Номер патента: US09917092B2. Автор: Wensheng Wang,Hideki Ito,Youichi Okita. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2018-03-13.

Semiconductor device, manufacturing method of the same, and mobile phone

Номер патента: US09906205B2. Автор: Atsushi Isobe,Kengo Asai. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by the same

Номер патента: US09735076B2. Автор: So Yoon KIM,Yoon Man LEE. Владелец: Samsung SDI Co Ltd. Дата публикации: 2017-08-15.

Method for manufacturing semiconductor device

Номер патента: US09673336B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-06-06.

Semiconductor device and method for manufacturing the same

Номер патента: US09583634B2. Автор: Hajime Tokunaga,Takuya Handa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-28.

Oxide semiconductor stacked film and semiconductor device

Номер патента: US09583570B2. Автор: Shunpei Yamazaki,Ryosuke Watanabe,Masashi Oota,Masashi TSUBUKU,Noritaka ISHIHARA,Koki Inoue. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-02-28.

Semiconductor device and manufacturing method of the same

Номер патента: US09478530B2. Автор: Yoshito Nakazawa,Yuji Yatsuda. Владелец: Renesas Electronics Corp. Дата публикации: 2016-10-25.

Connecting structure, liquid crystal device, electronic equipment, and anisotropic conductive adhesive agent and a manufacturing method thereof

Номер патента: US6671024B1. Автор: Kenji Uchiyama. Владелец: Seiko Epson Corp. Дата публикации: 2003-12-30.

Anisotropically conductive film

Номер патента: US20030178221A1. Автор: Cindy Chiu,Hsiao Chuang. Владелец: Avery Dennison Corp. Дата публикации: 2003-09-25.

Anisotropic conductive film

Номер патента: US20210305195A1. Автор: Masaki Taniguchi,Reiji Tsukao. Владелец: Dexerials Corp. Дата публикации: 2021-09-30.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20180204813A1. Автор: Taiichi Ogumi. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2018-07-19.

Method of forming a wiring structure, method of manufacturing a semiconductor device using the same, and semiconductor device manufactured by the same method

Номер патента: US20230411161A1. Автор: Minsik Kim,Yongjun SHIN,Sukhoon KIM,Gwanhyoung LEE. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2023-12-21.

Semiconductor device and method

Номер патента: US20240170536A1. Автор: Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Manufacturing method of semiconductor device

Номер патента: US8168523B2. Автор: Hideto Ohnuma,Masayuki Sakakura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-05-01.

Semiconductor device and method of manufacturing the same

Номер патента: US20120115252A1. Автор: Jirou Miura. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-05-10.

Semiconductor device

Номер патента: US20180158795A1. Автор: Yasuhiko Tanaka,Masaki Nakayama,Takashi Matsui,Motoji Shiota,Seiji Muraoka,Hiroki Miyazaki. Владелец: Sharp Corp. Дата публикации: 2018-06-07.

Manufacturing method of semiconductor device

Номер патента: US20120202331A1. Автор: Hideto Ohnuma,Masayuki Sakakura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-08-09.

Semiconductor device and method for manufacturing the same

Номер патента: US09871059B2. Автор: Shinya Sasagawa,Motomu Kurata,Yutaka Okazaki,Atsuo Isobe,Kazuya Hanaoka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-01-16.

Method for manufacturing a semiconductor device and semiconductor device manufactured by the same

Номер патента: US09690896B2. Автор: Jae-Woo Seo,Jaeha LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-27.

Electrical connecting method utilizing an anisotropic conductive film

Номер патента: US5502891A. Автор: Hideo Mori,Masanori Takahashi,Hiroshi Takabayashi. Владелец: Canon Inc. Дата публикации: 1996-04-02.

Flexible circuit film bonding apparatus and method of bonding flexible circuit film using the same

Номер патента: US20200373276A1. Автор: Chung-Seok Lee,Joongmok LEE,Eunjeong JEON. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-11-26.

Display module and display apparatus having the same

Номер патента: US20230387095A1. Автор: Eunhye Kim,Jaeseok Kim,Sangmoo Park,Yoonsuk LEE,Seungryong HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Semiconductor device and method of manufacturing the same

Номер патента: US20230030778A1. Автор: Fumihiko Hayashi,Hirokazu Sayama,Junjiro Sakai. Владелец: Renesas Electronics Corp. Дата публикации: 2023-02-02.

Semiconductor device and method of manufacturing the same

Номер патента: US20200294985A1. Автор: Eisuke Kodama. Владелец: Renesas Electronics Corp. Дата публикации: 2020-09-17.

Semiconductor device formation substrate and semiconductor device manufacturing method

Номер патента: US20110133185A1. Автор: Shinji Wakisaka. Владелец: Casio Computer Co Ltd. Дата публикации: 2011-06-09.

Semiconductor device and method for fabricating the same

Номер патента: US20010020707A1. Автор: Takashi Uehara,Mizuki Segawa. Владелец: Individual. Дата публикации: 2001-09-13.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20040192014A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2004-09-30.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

Номер патента: US20090253251A1. Автор: Misako Nakazawa,Naoki Makita,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2009-10-08.

Semiconductor device and method of manufacturing the same

Номер патента: US20230113513A1. Автор: Yasutaka Nakashiba,Katsunori TSUNETSUGU. Владелец: Renesas Electronics Corp. Дата публикации: 2023-04-13.

Anisotropic conductive film using polarized conductive particles and method for manufacturing the same

Номер патента: WO2007081098A1. Автор: Il-Rae Cho. Владелец: LS CABLE LTD.. Дата публикации: 2007-07-19.

Anisotropic conductive film, anisotropic conductive film production method, connecting method, and bonded structure

Номер патента: US09924599B2. Автор: Tomoyuki Ishimatsu. Владелец: Dexerials Corp. Дата публикации: 2018-03-20.

Display panel module with improved bonding structure and method of forming the same

Номер патента: US20010033127A1. Автор: Kazuhiro Mizutani,Eiichi Kitazume. Владелец: NEC Corp. Дата публикации: 2001-10-25.

Method of making films and coatings having anisotropic conductive pathways therein

Номер патента: US6149857A. Автор: Ciaran B. McArdle,Joseph Burke. Владелец: Henkel Loctite Ireland Ltd. Дата публикации: 2000-11-21.

Method of positioning an anisotropic conductive connector, method of positioning the anisotropic conductive connector and a circuit board for inspection, anisotropic conductive connector, and probe card

Номер патента: US20090015281A1. Автор: Mutsuhiko Yoshioka,Masaya Naoi,Akira Matsuura,Takashi Amemiya,Tomohisa Hoshino,Syuichi Tsukada. Владелец: Tokyo Electron Ltd. Дата публикации: 2009-01-15.

Sensor device and semiconductor device

Номер патента: US11997910B2. Автор: Takashi Nakagawa,Takayuki Ikeda,Takahiro Fukutome. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-05-28.

Electrical connection for an AIMD utilizing an anisotropic conductive layer

Номер патента: US12064639B2. Автор: Robert A. Stevenson,Christine A. Frysz,Keith W. Seitz,Marc Gregory Martino,Brian P Hohl. Владелец: Greatbatch Ltd. Дата публикации: 2024-08-20.

Semiconductor device with transducer and method for forming the same

Номер патента: US20240050987A1. Автор: Chun-Hao Chou,Kuo-Cheng Lee,Ming-Hsien Yang,Sheng Kai Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Methods for evaluating and fabricating semiconductor device and apparatus and program for evaluating the same

Номер патента: US20030137305A1. Автор: Kenji Okada. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2003-07-24.

Semiconductor device fabrication mask and method of manufacturing the same

Номер патента: US20110053058A1. Автор: Haruko Akutsu,Kyo Otsubo,Makiko Katano,Ayako Mizuno. Владелец: Individual. Дата публикации: 2011-03-03.

Semiconductor device, display device and method of operating the same

Номер патента: US20180335888A1. Автор: Kentaro Suzuki,Kazuya Endo,Atsushi Shikata,Shinobu Nohtomi. Владелец: Synaptics Japan GK. Дата публикации: 2018-11-22.

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

Номер патента: US12101942B2. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

Номер патента: US20240032308A1. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-25.

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

Номер патента: US11818899B2. Автор: Bonwon KOO,Changseung LEE,Wooyoung Yang,Minwoo Choi,Hajun SUNG,Dongho Ahn,Kwangmin Park,Chungman Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-14.

Interface circuit, and semiconductor device and liquid crystal display device including the same

Номер патента: TW201131980A. Автор: Ji-hyun Lee,Jae-Youn Lee,Sang-Hoon Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-09-16.

Nonvolatile semiconductor memory device and method for fabricating the same

Номер патента: US20060039175A1. Автор: Yoshinori Odake. Владелец: Individual. Дата публикации: 2006-02-23.

Selector circuit, and semiconductor device and liquid crystal display device comprising the same

Номер патента: KR100647095B1. Автор: 우도신야,고꾸분마사또시. Владелец: 후지쯔 가부시끼가이샤. Дата публикации: 2006-11-17.

Interface circuit, and semiconductor device and liquid crystal display device including the same

Номер патента: US20110157251A1. Автор: Ji-hyun Lee,Jae-Youn Lee,Sang-Hoon Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-06-30.

Receiving circuit, and semiconductor device and information processing system provided with the same

Номер патента: JP2012156660A. Автор: Yushi Ushio,雄史 牛尾,Daisuke Hamano,大輔 濱野,Tatsunori Usukinu,辰徳 薄衣. Владелец: HITACHI LTD. Дата публикации: 2012-08-16.

Semiconductor device, memory cell and method of forming the same

Номер патента: US12041790B2. Автор: Tung-Ying Lee,Yuan-Tien Tu,Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device with reduced thickness, electronic products employing the same, and method of fabricating the same

Номер патента: KR101442176B1. Автор: 김용일,김대익. Владелец: 삼성전자주식회사. Дата публикации: 2014-09-24.

SEMICONDUCTOR DEVICE AND A POWER MANAGEMENT DEVICE USING THE SAME

Номер патента: US20140015580A1. Автор: CHANG Ji-Soo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-01-16.

CAPACITANCE DETECTION CIRCUIT, SEMICONDUCTOR DEVICE, INPUT DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF DETECTING CAPACITANCE

Номер патента: US20190257870A1. Автор: Shimada Yuji. Владелец: . Дата публикации: 2019-08-22.

Switching power supply control semiconductor device and switching power supply device using the same

Номер патента: JP4033855B2. Автор: 哲司 山下. Владелец: Panasonic Corp. Дата публикации: 2008-01-16.

SEMICONDUCTOR DEVICE AND AC RESISTANCE MEASURING SYSTEM INCLUDING THE SAME

Номер патента: US20160091543A1. Автор: HIRAI Masato,LIM Siewling. Владелец: . Дата публикации: 2016-03-31.

SEMICONDUCTOR DEVICE AND CLOCK DATA RECOVERY SYSTEM INCLUDING THE SAME

Номер патента: US20140218081A1. Автор: SHINMYO Akinori. Владелец: Panasonic Corporation. Дата публикации: 2014-08-07.

PLL semiconductor device and method and apparatus for testing the same

Номер патента: JP4771572B2. Автор: 公利 韮塚. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-09-14.

Semiconductor device and AC resistance measuring system including the same

Номер патента: TW201624662A. Автор: 平井正人,秀玲 林. Владелец: 瑞薩電子股份有限公司. Дата публикации: 2016-07-01.

Semiconductor device and AC resistance measurement system including the same

Номер патента: JP6475942B2. Автор: 平井　正人,正人 平井,シュリン リム. Владелец: Renesas Electronics Corp. Дата публикации: 2019-02-27.

Semiconductor device for motor driving and motor having the same, motor driving apparatus and air conditioner

Номер патента: EP1860767B1. Автор: Hiroyuki Hasegawa,Kenji Sakurai. Владелец: HITACHI LTD. Дата публикации: 2012-08-01.

Semiconductor device with buried bitlin method for manufacturing the samee

Номер патента: KR101145390B1. Автор: 김형수,임창문,마원광. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2012-05-15.

Semiconductor device, memory cell and method of forming the same

Номер патента: US20230180486A1. Автор: Tung-Ying Lee,Yuan-Tien Tu,Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-06-08.

Semiconductor device, semiconductor module and method of manufacturing the same

Номер патента: TW201246461A. Автор: Young-Man Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-11-16.

Method for donor film and method for fabricating of the organic light emitting display of the same

Номер патента: KR100769431B1. Автор: 이선희,송명원. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2007-10-22.

Laser induced thermal imaging film and method of manufacturing organic light emitting diode display device using the same

Номер патента: KR102000044B1. Автор: 배효대,윤경준,유영준,고유리,송헌일,오영무,배경지. Владелец: 엘지디스플레이 주식회사. Дата публикации: 2019-07-16.

Manufacturing method of zinc oxide nanorod arrays and nanorod arrays made by the same and semiconductor device using the same

Номер патента: WO2014182129A1. Автор: Jong Lam Lee,Sung Joo Kim,Buem Joon Kim. Владелец: Seoul Viosys Co., Ltd.. Дата публикации: 2014-11-13.

Semi-finished product for the production of a printed circuit board and method for producing the same

Номер патента: US09781845B2. Автор: Johannes Stahr,Mikael Tuominen. Владелец: AT&S Austria Technologie und Systemtechnik AG. Дата публикации: 2017-10-03.

Semi-finished Product for the Production of a Printed Circuit Board and Method for Producing the Same

Номер патента: US20160021763A1. Автор: Johannes Stahr,Mikael Tuominen. Владелец: AT&S Austria Technologie und Systemtechnik AG. Дата публикации: 2016-01-21.

Transducer interconnect with conductive films

Номер патента: US20100103224A1. Автор: John R. Andrews,Pinyen Lin,Bradley James Gerner. Владелец: Xerox Corp. Дата публикации: 2010-04-29.

Semi-finished product for the production of a printed circuit board and method for producing the same

Номер патента: EP2974564A2. Автор: Johannes Stahr,Mikael Tuominen. Владелец: AT&S Austria Technologie und Systemtechnik AG. Дата публикации: 2016-01-20.

Semi-finished product for the production of a printed circuit board and method for producing the same

Номер патента: WO2014131071A2. Автор: Johannes Stahr,Mikael Tuominen. Владелец: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft. Дата публикации: 2014-09-04.

Display device having an anisotropic conductive film

Номер патента: US20200348736A1. Автор: Jong Yoon Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2020-11-05.

Transducer interconnect with conductive films

Номер патента: US20120199666A1. Автор: John R. Andrews,Pinyen Lin,Bradley James Gerner. Владелец: Xerox Corp. Дата публикации: 2012-08-09.

Semiconductor device for a tuner and diversity receiver

Номер патента: WO2007005826A3. Автор: Hideyuki Jp Maejima. Владелец: Hideyuki Jp Maejima. Дата публикации: 2007-06-07.

Anisotropic conductive film

Номер патента: US20140027169A1. Автор: Lung-Hai Wu,Chen-Kuan Kuo,Chien-Huang HUANG. Владелец: BenQ Materials Corp. Дата публикации: 2014-01-30.

Hot pressing tool and hot pressing apparatus having the same

Номер патента: US20070051251A1. Автор: Tae Kim,Dong-won Kim,II Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-08.

Mode control circuit for semiconductor device and semiconductor memory device having the mode control circuit

Номер патента: US20020186603A1. Автор: Kye-Hyun Kyung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-12-12.

Thermal transfer image receiving sheet and method for manufacturing the same

Номер патента: US20050026779A1. Автор: Katsuyuki Oshima,Taro Suzuki,Takenori Omata. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2005-02-03.

Composition of vegetable soft capsule having excellent elasticity and adhesive property, provided in form of thin film, and having improved productivity and disintegration, and method of preparing the same

Номер патента: US09452140B2. Автор: Ju-Su Kim. Владелец: CHANG SUNG SOFTGEL SYSTEM Ltd. Дата публикации: 2016-09-27.

X-ray mask and device manufacturing method using the same

Номер патента: US20020197545A1. Автор: Hideki Ina,Kenji Itoga. Владелец: Canon Inc. Дата публикации: 2002-12-26.

Production of zinc oxide thin film and semiconductor element substrate and photovoltaic element formed by using the same

Номер патента: JPH10195693A. Автор: Katsumi Nakagawa,克己 中川,Kozo Arao,浩三 荒尾,Yukiko Iwasaki,Takaharu Kondo,隆治 近藤,由希子 岩▲崎▼. Владелец: Canon Inc. Дата публикации: 1998-07-28.

Integrated optical semiconductor device and optical gyroscope usinng the same

Номер патента: US5724462A. Автор: Ryoji Suzuki,Toshiya Yuhara,Shigehisa Tanaka,Tatemi Ido. Владелец: Hitachi Cable Ltd. Дата публикации: 1998-03-03.

Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same

Номер патента: US7397710B2. Автор: Hiroyuki Takahashi,Atsushi Nakagawa. Владелец: NEC Corp. Дата публикации: 2008-07-08.

Semiconductor device, display device, and electronic device including the same

Номер патента: JP4498669B2. Автор: 肇 木村,好文 棚田. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2010-07-07.

Method for forming resist pattern and method for manufacturing a semiconductor device

Номер патента: US7723016B2. Автор: Ei Yano,Junichi Kon. Владелец: Fujitsu Ltd. Дата публикации: 2010-05-25.

Test system and the method for testing a semiconductor device

Номер патента: US11385276B2. Автор: Kunihiko Suzuki. Владелец: Kioxia Corp. Дата публикации: 2022-07-12.

Test system and the method for testing a semiconductor device

Номер патента: US20210255234A1. Автор: Kunihiko Suzuki. Владелец: Kioxia Corp. Дата публикации: 2021-08-19.

Composition of vegetable soft capsule having excellent elasticity and adhesive property, provided in form of thin film, and having improved productivity and disintegration, and method of preparing the same

Номер патента: US20150272895A1. Автор: Ju-Su Kim. Владелец: CHANG SUNG SOFTGEL SYSTEM Ltd. Дата публикации: 2015-10-01.

SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND METHOD OF OPERATING THE SAME

Номер патента: US20180335888A1. Автор: Suzuki Kentaro,SHIKATA Atsushi,ENDO Kazuya,NOHTOMI Shinobu. Владелец: . Дата публикации: 2018-11-22.

Volatile Memory Device for buffering between non-Volatile Memory and host, Multi-chip packaged Semiconductor Device and Apparatus for processing data using the same

Номер патента: KR100606242B1. Автор: 김세진,손한구. Владелец: 삼성전자주식회사. Дата публикации: 2006-07-31.

Semiconductor device and method of generating voltages using the same

Номер патента: US20120170367A1. Автор: Bon Kwang Koo. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-07-05.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND METHOD FOR CONTROLLING THE SAME

Номер патента: US20160062448A1. Автор: PARK Jinpyo. Владелец: . Дата публикации: 2016-03-03.

AIR CONDITIONER PANEL SEMICONDUCTOR DEVICE AND VEHICLE AIR CONDITIONER SYSTEM HAVING THE SAME

Номер патента: US20150073604A1. Автор: Ro Kyu Sang. Владелец: HYUNDAI MOTOR COMPANY. Дата публикации: 2015-03-12.

METHOD OF MAKING SEMICONDUCTOR DEVICE AND A CONTROL SYSTEM FOR PERFORMING THE SAME

Номер патента: US20150095869A1. Автор: Fu Chung-Min,Tseng Huan Chi,LO WAN-YU,Liu Chin-Chou. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2015-04-02.

SEMICONDUCTOR DEVICE INSPECTION APPARATUS AND METHOD OF DRIVING THE SAME

Номер патента: US20180106731A1. Автор: KIM Jung Soo,YANG Yu Sin,RIM MIN HO,OH MYUNG SU,JUN CHUNG SAM,JEE YUN JUNG. Владелец: . Дата публикации: 2018-04-19.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND CONTROL METHOD OF THE SAME

Номер патента: US20190195924A1. Автор: GOMI Takahiko,Nagasawa Ryu. Владелец: . Дата публикации: 2019-06-27.

SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME

Номер патента: US20210276860A1. Автор: Hsiao Hsu-Liang,Huang Ching-Han,Lai Lu-Ming,SHEN Chia-Hung. Владелец: ADVANCED SEMICONDUCTOR ENGINEERING, INC.. Дата публикации: 2021-09-09.

METHOD OF MAKING SEMICONDUCTOR DEVICES AND A CONTROL SYSTEM FOR PERFORMING THE SAME

Номер патента: US20200233401A1. Автор: Chang Chia-Jung,NAN Ching-Hsi,Fu Yu-Hsiu. Владелец: . Дата публикации: 2020-07-23.

Semiconductor device package and a method of manufacturing the same

Номер патента: US20180334380A1. Автор: Hsu-Liang Hsiao,Lu-Ming Lai,Ching-Han Huang,Chia-Hung Shen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-11-22.

Semiconductor device mounting test chamber and aapratus including the same

Номер патента: KR102286021B1. Автор: 이창욱,백창훈,허석. Владелец: 유정시스템(주). Дата публикации: 2021-08-03.

Semiconductor device package and a method of manufacturing the same

Номер патента: US11014806B2. Автор: Hsu-Liang Hsiao,Lu-Ming Lai,Ching-Han Huang,Chia-Hung Shen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-05-25.

Semiconductor device design system and method of using the same

Номер патента: CN103425812A. Автор: 薛福隆,张智贤,彭永州. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-12-04.

Semiconductor device and method of generating voltages using the same

Номер патента: US8879316B2. Автор: Bon Kwang Koo. Владелец: SK hynix Inc. Дата публикации: 2014-11-04.

Method for producing semiconductor device and exposure apparatus for use in the same

Номер патента: KR100403322B1. Автор: 한상준,김정회. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-05-10.

Probe card for testing semiconductor devices, Tester and Chip inspection method using the same

Номер патента: KR100977060B1. Автор: 김동권. Владелец: 주식회사 루셈. Дата публикации: 2010-08-19.

DDR SDRAM semiconductor device generating internal reference voltage for testing the same

Номер патента: KR100699811B1. Автор: 최성호,신충선. Владелец: 삼성전자주식회사. Дата публикации: 2007-03-27.

Semiconductor device, semiconductor system, and control method of the same

Номер патента: EP3502892A1. Автор: Takahiko GOMI,Ryu Nagasawa. Владелец: Renesas Electronics Corp. Дата публикации: 2019-06-26.

Semiconductor device manufacturing method and apparatus for implementing the same

Номер патента: JP2644551B2. Автор: 邦彦 西,正親 増田,敏浩 安原. Владелец: HITACHI LTD. Дата публикации: 1997-08-25.

Socket for testing a semiconductor device and a connecting sheet used for the same

Номер патента: US20040046581A1. Автор: Yoshihiro Kashiba,Shigeki Maekawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2004-03-11.

Synchronous semiconductor device, and inspection system and method for the same

Номер патента: US20080204067A1. Автор: Hidetoshi Tanaka,Hiroyuki Sugamoto,Yasushige Ogawa. Владелец: Fujitsu Ltd. Дата публикации: 2008-08-28.

Overlay verniers of semiconductor devices and method of manufacturing and testing the same

Номер патента: KR100192171B1. Автор: 이두희,권원택. Владелец: 현대전자산업주식회사. Дата публикации: 1999-06-15.

Semiconductor device, semiconductor system, and method for controlling the same

Номер патента: US9829940B2. Автор: Jinpyo PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-28.

Semiconductor device including fuse and method for testing the same capable of suppressing erroneous determination

Номер патента: CN1818692A. Автор: 上田岳洋. Владелец: NEC Corp. Дата публикации: 2006-08-16.

Focus control method for spectroscopic measuring apparatus, inspection method for semiconductor device, and spectroscopic measuring apparatus for performing the same

Номер патента: US20240060907A1. Автор: Youngsun Choi,Jiwoong Kim,Myungjun Lee,Kwangrak Kim,Soonyang Kwon,Jangryul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-22.

Optical Film And Manufacturing Process Thereof

Номер патента: US20100321787A1. Автор: Jin-Hyun Kim,Kyung-Mo Kim,Sang-Choll Han,Kwang-Seung Park,Won-Young Jo. Владелец: LG Chem Ltd. Дата публикации: 2010-12-23.

POLYMER FILM, AND OPTICALLY-COMPENSATORY FILM, POLARIZER AND LIQUID-CRYSTAL DISPLAY DEVICE COMPRISING THE SAME

Номер патента: US20130253182A1. Автор: Omatsu Tadashi,MATSUFUJI Akihiro,Nakayama Hajime,Takahashi Osamu,Nimura Shigeaki,Nishiura Yousuke. Владелец: . Дата публикации: 2013-09-26.

A photohardenable resin composition, a dry film and a hardened product thereof, and a printed circuit board using the same

Номер патента: TWI514074B. Автор: Masao Arima,Shoji Minegishi. Владелец: Taiyo Ink Mfg Co Ltd. Дата публикации: 2015-12-21.

Cold Water Soluble Bag Packaging Systems, Cold Water Soluble Films and Cold Water Soluble Bags, and Methods for Packaging Pesticides Using the Same

Номер патента: KR100729540B1. Автор: 아맨드 조셉 데스머레이스,헨리 얼 누프,로렌스 클리포드 덜,쟝 알랭 레이몽. Владелец: 모노졸, 엘엘씨. Дата публикации: 2007-09-05.

Apparatus for forming zinc oxide thin film, method for forming zinc oxide thin film, and method for manufacturing semiconductor element substrate and photovoltaic element using the same

Номер патента: JP3524366B2. Автор: 益光 岩田. Владелец: Canon Inc. Дата публикации: 2004-05-10.

Light diffusion film and planar light source element and liquid crystal display device utilizing the same

Номер патента: US7967492B2. Автор: Atsushi Nagasawa,Yasuyuki Sanai. Владелец: Kuraray Co Ltd. Дата публикации: 2011-06-28.

REAL WOOD FILM AND METHOD OF MANUFACTURING INJECTION-MOLDED REAL WOOD PRODUCT BY USING THE SAME

Номер патента: US20180222158A1. Автор: KIM Sung Hoon,Park Hee-Dae,CHOI Jung Ah,KIM Keunha. Владелец: . Дата публикации: 2018-08-09.

Specimens for measuring the bonding strength of thin film and methods for measuring the bonding strength of thin film using the same

Номер патента: KR20150069913A. Автор: 이재상,지금영. Владелец: 삼성전기주식회사. Дата публикации: 2015-06-24.

Burnishing film and method for adjusting surface glossiness of prepress color proof using the same

Номер патента: JP3104857B2. Автор: 紀雄 矢部,俊和 江田,俊彦 高田,和夫 永島,久 中嶋. Владелец: Nippon Paper Industries Co Ltd. Дата публикации: 2000-10-30.

Method for manufacturing reflective film and liquid crystal display having a part of transmitive region with the same

Номер патента: CN101004509A. Автор: 吉田健,杉本靖,京井正之,田谷昌人,吉川武尚. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2007-07-25.

Process for producing film and sheet materials from thermoplastic materials having hot tack by the blown film process and the film and sheet materials thereby obtained

Номер патента: ZA721839B. Автор: H Panenbecker,R Plate. Владелец: R Plate. Дата публикации: 1972-12-27.

Touch panel and method for manufacturing the same

Номер патента: US09990085B2. Автор: Hiroyuki Kobayashi. Владелец: Fujifilm Corp. Дата публикации: 2018-06-05.

Passive matrix display device and method of making the same

Номер патента: US20160033845A1. Автор: Richard I. Mccartney. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-02-04.

Passive matrix display device and method of making the same

Номер патента: US09804471B2. Автор: Richard I. Mccartney. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-10-31.

Semiconductor devices and semiconductor systems including the same

Номер патента: US09653145B1. Автор: Hong Ki Moon,Jeong Tae Hwang. Владелец: SK hynix Inc. Дата публикации: 2017-05-16.

Semiconductor devices and semiconductor systems including the same

Номер патента: US09646676B1. Автор: Sang Ah HYUN,Jeong Tae Hwang. Владелец: SK hynix Inc. Дата публикации: 2017-05-09.

Application processor and semiconductor system including the same

Номер патента: US10268621B2. Автор: Sang-Hoon Lee,Kwang-Hee Lee,Byoung-Sul Kim,Sung-Taek HONG,Kwan-Yong Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-23.

Application processor and semiconductor system including the same

Номер патента: US20160110131A1. Автор: Sang-Hoon Lee,Kwang-Hee Lee,Byoung-Sul Kim,Sung-Taek HONG,Kwan-Yong Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-21.

Method and device for processing pressed part from material with anisotropic conductivity

Номер патента: RU2644493C1. Автор: Владислав Павлович Смоленцев,Олег Николаевич Кириллов,Сергей Степанович Юхневич. Владелец: Федеральное государственное унитарное предприятие "Государственный космический научно-производственный центр имени М.В. Хруничева" (ФГУП "ГКНПЦ им. М.В. Хруничева"). Дата публикации: 2018-02-12.

Voltage generating circuit and semiconductor device for suppressing leakage current

Номер патента: US12032396B2. Автор: Hiroki Murakami. Владелец: Winbond Electronics Corp. Дата публикации: 2024-07-09.

Data bus driving circuit, and semiconductor device and semiconductor memory device including the same

Номер патента: US20170315952A1. Автор: Hiroyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-02.

Amorphous semiconductor device and method and apparatus for producing the same

Номер патента: CA1236933A. Автор: Kunio Asai,Hideo Yamamoto,Osamu Nakamura,Keitaro Fukui,Toshihiko Yoshida,Mitsuo Matsumura,Yoshinobu Okayasu. Владелец: Toa Nenryo Kogyyo KK. Дата публикации: 1988-05-17.

Semiconductor Device and Manufacturing Method Thereof

Номер патента: US20120001332A1. Автор: TANAKA Tetsuhiro. Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001275A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001310A1. Автор: Horiki Hiroshi,NISHINO MASANORI. Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер патента: US20120001173A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Номер патента: US20120001255A1. Автор: PARK JIN WON. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20120003842A1. Автор: Tanaka Yoshinobu,Ueda Hirokazu,Ohsawa Yusuke. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-01-05.

LAMINATE OPTICAL BODY, OPTICAL FILM, LIQUID CRYSTAL DISPLAY APPARATUS USING SAID OPTICAL FILM, AND METHOD FOR PRODUCING LAMINATE OPTICAL BODY

Номер патента: US20120003400A1. Автор: Takeda Kentarou,Kitagawa Takeharu,Nishimura Akinori,Inagaki Junichi,Yaginuma Hironori,YOSHIMI Hiroyuki,Kinoshita Ryoji. Владелец: NITTO DENKO CORPORATION. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE, METHOD OF ADJUSTING LOAD CAPACITANCE FOR THE SAME, AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME

Номер патента: US20120063251A1. Автор: LIM Jong Hyoung,Kang Sang Seok,Kwon Hyung Shin. Владелец: . Дата публикации: 2012-03-15.

Composition Of Vegetable Soft Capsule Having Excellent Elasticity And Adhesive Property, Provided In Form Of Thin Film, And Having Improved Productivity And Disintegration, And Method Of Preparing The Same

Номер патента: NZ706345A. Автор: KIM Jusu. Владелец: CHANG SUNG SOFTGEL SYSTEM Ltd. Дата публикации: 2014-12-03.

Manufacturing Method Of Semiconductor Device For ESD Protection and Semiconductor Device For ESD Protection Manufactured by The Method

Номер патента: KR101323143B1. Автор: 김진형,임민정,선병수. Владелец: (주)페가테크. Дата публикации: 2013-10-30.

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME

Номер патента: US20130249048A1. Автор: KIM Hyung-Hwan,Pyo Seung-Seok,CHOI Bong-Ho,LEE Jin-Yul. Владелец: . Дата публикации: 2013-09-26.

SEMICONDUCTOR DEVICE INCLUDING BUFFER ELECTRODE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME

Номер патента: US20120119181A1. Автор: Oh Gyu-Hwan,Kang Shin-Jae,Im Dong-Hyun,Jung Sug-Woo,Lee Chan-Mi. Владелец: . Дата публикации: 2012-05-17.

SEMICONDUCTOR DEVICES HAVING DUAL TRENCH, METHODS OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM HAVING THE SAME

Номер патента: US20120132976A1. Автор: SIM Jae-hwang,KIM Dong-Won,Kim Keon-Soo,Lee Young-Ho. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-05-31.

SEMICONDUCTOR DEVICE INCLUDING CONTACT STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME

Номер патента: US20120313151A1. Автор: . Владелец: . Дата публикации: 2012-12-13.

Slective etching method for polycrystalline silicon film and manufacture of semiconductor device using the same

Номер патента: JPH1167724A. Автор: Takafumi Tokunaga,尚文 徳永,Tadashi Umezawa,唯史 梅澤. Владелец: HITACHI LTD. Дата публикации: 1999-03-09.

Method for forming InSb-based crystal film, and InSb-based semiconductor device and method for manufacturing the same

Номер патента: JP3458687B2. Автор: 丈士 田中,峰生 和島. Владелец: Hitachi Cable Ltd. Дата публикации: 2003-10-20.

Semiconductor device and liquid crystal display device using the same

Номер патента: JP3099915B2. Автор: 郁典 小林,守 竹田,浩二 松永,富造 松岡,和▲吉▼ 中村. Владелец: Panasonic Corp. Дата публикации: 2000-10-16.

Nitride semiconductor multilayer substrate and nitride semiconductor device and nitride semiconductor laser device using the same

Номер патента: JP4423969B2. Автор: 敦生 道上,拓明 松村. Владелец: Nichia Corp. Дата публикации: 2010-03-03.

SYSTEM INCLUDING SEMICONDUCTOR DEVICES AND CONTROLLER AND METHOD FOR OPERATING THE SAME

Номер патента: US20120010731A1. Автор: You Jung-Taek. Владелец: . Дата публикации: 2012-01-12.

Semiconductor Devices Having Electrodes and Methods of Fabricating the Same

Номер патента: US20120133041A1. Автор: . Владелец: . Дата публикации: 2012-05-31.

SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME

Номер патента: US20120235299A1. Автор: Wang Ying-Lang,Chen Kei-Wei,Chang Chih-Chung,CHANG Shih Chieh. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2012-09-20.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120281490A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-11-08.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20120313172A1. Автор: . Владелец: . Дата публикации: 2012-12-13.

SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME

Номер патента: US20120326339A1. Автор: YOSHIMURA Atsushi,MUKAIDA Hideko,SUZUYA Nobuhito. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-12-27.

SEMICONDUCTOR DEVICE, START-UP CIRCUIT, OPERATING METHOD FOR THE SAME

Номер патента: US20130015888A1. Автор: Hu Chih-Min,Chan Wing-Chor,Chen Li-Fan. Владелец: MACRONIX INTERNATIONAL CO., LTD.. Дата публикации: 2013-01-17.

Semiconductor Device and Electric Power Conversion System Using The Same

Номер патента: US20130020634A1. Автор: Suzuki Hiroshi,Shiraishi Masaki,MORI Mutsuhiro,Watanabe So. Владелец: Hitachi, Ltd.. Дата публикации: 2013-01-24.

SEMICONDUCTOR DEVICE HAVING PLURAL CIRCUIT BLOCKS THAT OPERATE THE SAME TIMING

Номер патента: US20130033916A1. Автор: NAGAMINE Hisayuki,Oishi Hayato. Владелец: ELPIDA MEMORY, INC.. Дата публикации: 2013-02-07.

SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME

Номер патента: US20130207232A1. Автор: JIN Hyung Ju. Владелец: SK HYNIX INC.. Дата публикации: 2013-08-15.

STACK TYPE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING AND TESTING THE SAME

Номер патента: US20130277857A1. Автор: Yoo Sun Jong. Владелец: SK hynix lnc.. Дата публикации: 2013-10-24.

SEMICONDUCTOR DEVICE DESIGN SYSTEM AND METHOD OF USING THE SAME

Номер патента: US20130311957A1. Автор: HSUEH Fu-Lung,Peng Yung-Chow,CHANG Chih-Hsien. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-11-21.

Cleaning solution for semiconductor devices and contact hole cleaning method using the same

Номер патента: KR19980065998A. Автор: 박정훈. Владелец: 김광호. Дата публикации: 1998-10-15.

Cleaning liquid for semiconductor device and producing method there for using the same

Номер патента: JPH11340183A. Автор: 日出人 後藤,Hideto Goto,光雄 宮本,彰一 石田,等 坂本,Hitoshi Sakamoto,Mitsuo Miyamoto,稔夫 立野,Shoichi Ishida,Toshiaki Osada,Toshio Tateno,Satoshi Aoyanagi,聡 青柳,利哲 長田. Владелец: Morita Kagaku Kogyo Co Ltd. Дата публикации: 1999-12-10.

Semiconductor devices, wafer therefor and method for manufacturing the same

Номер патента: JP2004165469A. Автор: Mitsuhiro Tanaka,Osamu Oda,智彦 柴田,光浩 田中,修 小田,博康 石川,Hiroyasu Ishikawa,孝志 江川,義孝 倉岡,Takashi Egawa,Tomohiko Shibata,Yoshitaka Kuraoka. Владелец: NGK Insulators Ltd. Дата публикации: 2004-06-10.

Power semiconductor device as well as method for making the same

Номер патента: CN101228636A. Автор: 让·米切尔·雷内斯,斯特凡·阿尔维斯,阿兰·德朗,布兰迪诺·洛佩斯,乔尔·马尔盖里塔. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2008-07-23.

Semiconductor device for photodetection and method of manufacturing the same

Номер патента: JP2988353B2. Автор: 光弘 杉山,武則 森川,田代　　勉. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-12-13.

RETARDATION FILM, AND ORGANIC EL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME

Номер патента: US20120302713A1. Автор: . Владелец: JX NIPPON OIL & ENERGY CORPORATION. Дата публикации: 2012-11-29.

Gas barrier film, and liquid crystal display element and EL display element formed using the same

Номер патента: JP4373270B2. Автор: さやか 川島,実 駒田,理之 鈴木. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2009-11-25.

Anisotropic scattering film and EL element, EL display device, and EL lighting device using the same

Номер патента: JP5381326B2. Автор: 公志 田坂,忠宣 関矢,啓史 別宮. Владелец: KONICA MINOLTA INC. Дата публикации: 2014-01-08.

Polyvinyl alcohol series film and producing method thereof and lamination body for thermal transfer using the same

Номер патента: CN102731946A. Автор: 大久保正宪,宫户学,北村秀一. Владелец: Nippon Synthetic Chemical Industry Co Ltd. Дата публикации: 2012-10-17.

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PMOS DEVICE FABRICATED BY THE METHOD

Номер патента: US20130234216A1. Автор: Hsu Shih-Chieh,Chen Chih-Chung,Pai Chi-Horn,Chou Ying-Hung,Hsu Shao-Hua,Tsai Zen-Jay,Su Shih-Hao,Chen Chun-Chia. Владелец: UNITED MICROELECTRONICS CORP.. Дата публикации: 2013-09-12.

Semiconductor thin film and thin-film semiconductor device using it

Номер патента: JPH10261589A. Автор: 舜平 山崎,Shunpei Yamazaki,Naoto Kusumoto,Kouyuu Chiyou,宏勇 張,直人 楠本. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1998-09-29.

Method for forming silicon nitride film and method for semiconductor device

Номер патента: JP2004335980A. Автор: Yoshihiro Saito,吉広 斎藤,Yasuhiro Tosaka,保弘 登坂. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2004-11-25.

LAYER HAVING FUNCTIONALITY, METHOD FOR FORMING FLEXIBLE SUBSTRATE HAVING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20120001181A1. Автор: AOKI Tomoyuki,Tsurume Takuya. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001170A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001179A1. Автор: Yamazaki Shunpei,Takahashi Masahiro,TOCHIBAYASHI Katsuaki,HIROHASHI Takuya,NAKAZAWA Yasutaka,YOKOYAMA Masatoshi. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120000518A1. Автор: Tokioka Hidetada,ORITA Tae,YAMARIN Hiroya. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2012-01-05.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE

Номер патента: US20120002090A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер патента: US20120001331A1. Автор: . Владелец: KABUSHI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE MANUFACTURE METHOD AND SEMICONDUCTOR DEVICE

Номер патента: US20120001344A1. Автор: IDANI Naoki,TAKESAKO Satoshi. Владелец: FUJITSU SEMICONDUCTOR LIMITED. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR

Номер патента: US20120001244A1. Автор: Yamazaki Shunpei,KOYAMA Jun,MURAKAMI Satoshi,Tanaka Yukio,KITAKADO Hidehito. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

CONNECTING MATERIAL, METHOD FOR MANUFACTURING CONNECTING MATERIAL AND SEMICONDUCTOR DEVICE

Номер патента: US20120000965A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

METHOD OF MANUFACTURING SEMICONDUCTOR MODULES AND SEMICONDUCTOR MODULE

Номер патента: US20120001349A1. Автор: Suzuki Yoshikazu,KANEKO Takahisa,HARADA Daisuke,ISHIYAMA Hiroshi. Владелец: . Дата публикации: 2012-01-05.

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001342A1. Автор: . Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120003797A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Номер патента: US20120001300A1. Автор: Ito Takayuki,ISHIDA Tatsuya,Yoshino Kenichi,Naito Tatsuya. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001169A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

Semiconductor Device and Method for Manufacturing the Same

Номер патента: US20120001180A1. Автор: Yoshizumi Kensuke,YOKOI Tomokazu. Владелец: . Дата публикации: 2012-01-05.

Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device

Номер патента: US20120003787A1. Автор: TANAKA Tetsuhiro,KATO Erika. Владелец: . Дата публикации: 2012-01-05.

Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers

Номер патента: US20120003799A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001168A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND FABRICATION SYSTEM OF SEMICONDUCTOR DEVICE

Номер патента: US20120003761A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Semiconductor Light Emitting Device and Method for Manufacturing the Same

Номер патента: US20120001202A1. Автор: Horng Ray-Hua. Владелец: NATIONAL CHENG KUNG UNIVERSITY. Дата публикации: 2012-01-05.

Semiconductor Device

Номер патента: US20120001269A1. Автор: . Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

Semiconductor substrates including input/output redistribution using wire bonds and anisotropically conductive film, and assemblies including same

Номер патента: SG141241A1. Автор: Edmund Koon Tian Lua,Nam Yin Leng. Владелец: Micron Technology Inc. Дата публикации: 2008-04-28.

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR MODULE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE

Номер патента: US20120001272A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Номер патента: US20120001304A1. Автор: . Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-01-05.

OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20120002285A1. Автор: Matsuda Manabu. Владелец: FUJITSU LIMITED. Дата публикации: 2012-01-05.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

Номер патента: US20120001350A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

ETCHANTS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME

Номер патента: US20120001264A1. Автор: YANG Jun-Kyu,Kim Hong-Suk,Hwang Ki-Hyun,Ahn Jae-Young,Lim Hun-Hyeong,KIM Jin-Gyun. Владелец: . Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

Semiconductor Device and Manufacturing Method Thereof

Номер патента: US20120001335A1. Автор: ENDO Yuta,TANAKA Tetsuhiro. Владелец: . Дата публикации: 2012-01-05.

METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер патента: US20120003770A1. Автор: Fujiwara Shinsuke,Akita Katsushi,Nakahata Hideaki,MOTOKI Kensaku,Hashimoto Shin. Владелец: . Дата публикации: 2012-01-05.

ADHESIVE COMPOSITION AND OPTICAL MEMBER USING THE SAME

Номер патента: US20120004369A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

THIN FILM ARTICLE AND METHOD FOR FORMING A REDUCED CONDUCTIVE AREA IN TRANSPARENT CONDUCTIVE FILMS FOR PHOTOVOLTAIC MODULES

Номер патента: US20120000520A1. Автор: Feldman-Peabody Scott Daniel,FREY Jonathan Mack. Владелец: PRIMESTAR SOLAR. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001311A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

Semiconductor Device and Method of Forming Compliant Stress Relief Buffer Around Large Array WLCSP

Номер патента: US20120001325A1. Автор: Shim Il Kwon,Chow Seng Guan,Lin Yaojian. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

Semiconductor Device Including Ultra Low-K (ULK) Metallization Stacks with Reduced Chip-Package Interaction

Номер патента: US20120001323A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001257A1. Автор: MURAKAWA Kouichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF SAME

Номер патента: US20120001321A1. Автор: IMAMURA Tomomi,Natsuda Tetsuo,Nishijo Yoshinosuke. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

NANOPOROUS FILMS AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20120000845A1. Автор: Park Han Oh,Kim Jae Ha,JIN Myung Kuk. Владелец: BIONEER CORPORATION. Дата публикации: 2012-01-05.

PHOTOSENSITIVE COMPOSITION, PATTERN FORMING MATERIAL AND PHOTOSENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, PATTERN FILM, ANTIREFLECTION FILM, INSULATING FILM, OPTICAL DEVICE, AND ELECTRONIC DEVICE

Номер патента: US20120003437A1. Автор: Kodama Kunihiko,WADA Kenji,OHTA Masaki. Владелец: FUJIFILM Corporation. Дата публикации: 2012-01-05.

POLYMER FOR FORMING RESIST PROTECTION FILM, COMPOSITION FOR FORMING RESIST PROTECTION FILM, AND METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES USING THE COMPOSITION

Номер патента: US20120003589A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Номер патента: US20120003841A1. Автор: . Владелец: ULVAC, INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME

Номер патента: US20120001293A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

Номер патента: US20120002142A1. Автор: Fujiwara Sayuri,Satoh Eiji,Asaoka Yasushi,Deguchi Kazuhiro,Tanimoto Kazunori,MATSUDA TAKAFUMI,MIKUMO KATSUHIRO. Владелец: SHARP KABUSHIKI KAISHA. Дата публикации: 2012-01-05.

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003815A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WHICH A PLURALITY OF TYPES OF TRANSISTORS ARE MOUNTED

Номер патента: US20120001265A1. Автор: . Владелец: FUJITSU SEMICONDUCTOR LIMITED. Дата публикации: 2012-01-05.

Fullerene Derivatives and Organic Electronic Device Comprising the Same

Номер патента: US20120004476A1. Автор: KIM Dong Wook,LIM Hyun Seok,LEE Jaemin,JUNG Jae Wook,Yoon Sung Cheol,Lim Jongsun,Lee Chang Jin,KANG YONGKU,NAM So Youn. Владелец: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001200A1. Автор: Yanagihara Manabu,Uemoto Yasuhiro,IKOSHI Ayanori,MORITA TATSUO. Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING A COUPLING EFFECT OF A TEST-DISABLE TRANSMISSION LINE

Номер патента: US20120001175A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME

Номер патента: US20120003590A1. Автор: . Владелец: FUJIFILM Corporation. Дата публикации: 2012-01-05.

POWER SEMICONDUCTOR DEVICE

Номер патента: US20120001199A1. Автор: Bauer Friedhelm. Владелец: ABB RESEARCH LTD. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE SENSOR

Номер патента: US20120001291A1. Автор: Kokumai Kazuo. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001294A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE

Номер патента: US20120001318A1. Автор: . Владелец: Denso Corporation. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20120003801A1. Автор: . Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.