COMPOUND FOR FORMING ORGANIC FILM, AND ORGANIC FILM COMPOSITION USING THE SAME, PROCESS FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS.

COMPOUND FOR FORMING ORGANIC FILM, AND ORGANIC FILM COMPOSITION USING THE SAME, PROCESS FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS

Номер патента: US20130337649A1
Опубликовано: 19-12-2013
Автор(ы): KORI Daisuke, Noda Kazumi, OGIHARA Tsutomu, Tachibana Seiichiro, WATANABE Takeru, YANO Toshiharu
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

Номер патента: US20140193975A1. Автор: Tachibana Seiichiro,OGIHARA Tsutomu,UEDA Takafumi,TANEDA Yoshinori. Владелец: SHIN-ETSU CHEMICAL CO., LTD.. Дата публикации: 2014-07-10.

Method for forming a resist under layer film and patterning process

Номер патента: US20140335692A1. Автор: Tsutomu Ogihara,Toshihiko Fujii,Seiichiro Tachibana,Daisuke Kori,Shiori Nonaka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2014-11-13.

Method for forming organic film and method for manufacturing substrate for semiconductor apparatus

Номер патента: US09984891B2. Автор: Tsutomu Ogihara,Rie Kikuchi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2018-05-29.

Resist material and method for forming semiconductor structure using resist layer

Номер патента: US20180164684A1. Автор: Ching-Yu Chang,Chen-Yu Liu,Chin-Hsiang Lin,Cheng-Han Wu,Ya-Ching Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-14.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US11934100B2. Автор: Kazunori Maeda,Daisuke Kori,Yusuke Kai. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-03-19.

Light-absorbing polymer for forming organic anti-reflective layer, composition including the same, and method for forming semiconductor device pattern using the same

Номер патента: WO2003098670A1. Автор: Kwanku Lee. Владелец: Molay Co., Ltd.. Дата публикации: 2003-11-27.

Method of and apparatus for removing an organic film

Номер патента: US5503708A. Автор: Takeshi Kimura,Kenichi Kawasumi,Sukeyoshi Tsunekawa,Keisuke Funatsu,Kootaroo Koizumi. Владелец: HITACHI LTD. Дата публикации: 1996-04-02.

Method for forming a resist under layer film and patterning process

Номер патента: EP2816409B1. Автор: Tsutomu Ogihara,Toshihiko Fujii,Seiichiro Tachibana,Daisuke Kori,Shiori Nonaka. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2016-01-06.

Composition for forming organic film, method for forming organic film, and patterning process

Номер патента: EP4451062A2. Автор: Yasuyuki Yamamoto,Daisuke Kori,Tomohiro Imata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-23.

Composition for forming organic film, method for forming organic film, and patterning process

Номер патента: EP4451062A3. Автор: Yasuyuki Yamamoto,Daisuke Kori,Tomohiro Imata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-30.

Composition For Forming Organic Film, Method For Forming Organic Film, And Patterning Process

Номер патента: US20240355632A1. Автор: Yasuyuki Yamamoto,Daisuke Kori,Tomohiro Imata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-24.

Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process

Номер патента: EP4398036A1. Автор: Naoki Kobayashi,Daisuke Kori,Nobuhiro Nagamachi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-07-10.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

Номер патента: US20240321585A1. Автор: Naoki Kobayashi,Daisuke Kori,Kenta Ishiwata,Nobuhiro Nagamachi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-09-26.

Method For Forming Resist Underlayer Film And Patterning Process

Номер патента: US20240310732A1. Автор: Naoki Kobayashi,Daisuke Kori,Kenta Ishiwata,Nobuhiro Nagamachi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-09-19.

Resist underlayer film material, patterning process, and method for forming resist underlayer film

Номер патента: US20230168585A1. Автор: Naoki Kobayashi,Yasuyuki Yamamoto,Toshiharu Yano,Daisuke Kori,Hironori Satoh. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2023-06-01.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: EP4012499B1. Автор: Kazunori Maeda,Daisuke Kori,Yusuke Kai. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2023-05-03.

METHOD FOR FORMING A RESIST UNDER LAYER FILM AND PATTERNING PROCESS

Номер патента: US20140335692A1. Автор: Tachibana Seiichiro,OGIHARA Tsutomu,KORI Daisuke,FUJII Toshihiko,NONAKA Shiori. Владелец: SHIN-ETSU CHEMICAL CO., LTD.. Дата публикации: 2014-11-13.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: EP4012499A1. Автор: Kazunori Maeda,Daisuke Kori,Yusuke Kai. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2022-06-15.

Mask for forming selection area diffraction grating and growing selection area and method of manufacturing semiconductor device using the same

Номер патента: KR100424774B1. Автор: 하홍춘. Владелец: 삼성전자주식회사. Дата публикации: 2004-05-17.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US20200341377A1. Автор: Tsutomu Ogihara,Tsukasa Watanabe,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2020-10-29.

Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process

Номер патента: US09971245B2. Автор: Tsutomu Ogihara,Kazunori Maeda,Takeru Watanabe. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2018-05-15.

Photoresist film and manufacturing method for organic light emitting display device using the same

Номер патента: US09625818B2. Автор: Jae Hyun Park,Jin Wuk Kim,Wy-Yong Kim,Min Jee Kim,Young Tae Son,Hye Li Min,Young sub Shin. Владелец: LG Display Co Ltd. Дата публикации: 2017-04-18.

CYCLIC COMPOUND, PROCESS FOR PRODUCING THE SAME, RADIOSENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

Номер патента: JPWO2011065004A1. Автор: 越後　雅敏,雅敏越後,大晃高須賀,高須賀　大晃,悠岡田. Владелец: Mitsubishi Gas Chemical Co Inc. Дата публикации: 2013-04-11.

Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition

Номер патента: US09627204B2. Автор: Tsutomu Ogihara,Takafumi Ueda,Seiichiro Tachibana,Yoshinori Taneda. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-04-18.

Underlay film composition for imprints and method of forming pattern and pattern formation method using the same

Номер патента: US09507263B2. Автор: Kunihiko Kodama,Yuichiro Enomoto,Shinji Tarutani,Takayuki Ito,Hirotaka Kitagawa,Akiko Hattori,Tadashi OOMATSU. Владелец: Fujifilm Corp. Дата публикации: 2016-11-29.

Method for forming multi-layer film and patterning process

Номер патента: US09804492B2. Автор: Tsutomu Ogihara,Jun Hatakeyama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-10-31.

Ultraviolet absorber, composition for forming a resist under layer film, and patterning process

Номер патента: US09624356B2. Автор: Tsutomu Ogihara,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-04-18.

Planarizing agent for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

Номер патента: EP4235302A1. Автор: Tsutomu Ogihara,Yasuyuki Yamamoto,Toshiharu Yano,Kenta Ishiwata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2023-08-30.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

Номер патента: US20240248404A1. Автор: Naoki Kobayashi,Daisuke Kori,Nobuhiro Nagamachi. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-07-25.

Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process

Номер патента: EP4418044A1. Автор: Naoki Kobayashi,Daisuke Kori,Shohei Iwamori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-08-21.

Planarizing agent for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

Номер патента: US20230274936A1. Автор: Tsutomu Ogihara,Yasuyuki Yamamoto,Toshiharu Yano,Kenta Ishiwata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2023-08-31.

Cleaning composition for photolithography and method of forming photoresist pattern using the same

Номер патента: US09829797B2. Автор: Seung Hyun Lee,Seung Hun Lee,Sang Woong YOON,Gyeong Guk Ham. Владелец: Youngchang Chemical Co Ltd. Дата публикации: 2017-11-28.

Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same

Номер патента: US09423690B2. Автор: Shuji Hirano,Hiroo Takizawa,Wataru Nihashi,Natsumi YOKOKAWA. Владелец: Fujifilm Corp. Дата публикации: 2016-08-23.

COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

Номер патента: US20200341377A1. Автор: OGIHARA Tsutomu,BIYAJIMA Yusuke,WATANABE Tsukasa,Kanayama Masahiro. Владелец: SHIN-ETSU CHEMICAL CO., LTD.. Дата публикации: 2020-10-29.

Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same

Номер патента: WO2014030723A1. Автор: Shuji Hirano,Hiroo Takizawa,Wataru Nihashi,Natsumi YOKOKAWA. Владелец: FUJIFILM Corporation. Дата публикации: 2014-02-27.

Composition for forming imprint pattern, cured substance, imprint pattern producing method, device, and method for manufacturing device

Номер патента: US20230383044A1. Автор: Akihiro HAKAMATA. Владелец: Fujifilm Corp. Дата публикации: 2023-11-30.

Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same

Номер патента: US20150168834A1. Автор: Shuji Hirano,Hiroo Takizawa,Wataru Nihashi,Natsumi YOKOKAWA. Владелец: Fujifilm Corp. Дата публикации: 2015-06-18.

COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION

Номер патента: US20170205711A1. Автор: Sakamoto Rikimaru,FUJITANI Noriaki,Endo Takafumi. Владелец: NISSAN CHEMICAL INDUSTRIES, LTD.. Дата публикации: 2017-07-20.

Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process

Номер патента: EP4398037A1. Автор: Naoki Kobayashi,Daisuke Kori,Shohei Iwamori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-07-10.

Process for forming multi-layer film and patterning process

Номер патента: US09658530B2. Автор: Jun Hatakeyama,Takeshi Nagata. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-05-23.

Coating-type composition for forming organic film, patterning process, polymer, and method for manufacturing polymer

Номер патента: US12105420B2. Автор: Tsutomu Ogihara,Yasuyuki Yamamoto,Takayoshi Nakahara,Daisuke Kori,Keisuke NIIDA. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-01.

Method for producing a composition for forming an organic film

Номер патента: US10047244B2. Автор: Tsutomu Ogihara,Motoaki Iwabuchi,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2018-08-14.

Quaternary ammonium salt compound, composition for forming a resist under layer film, and patterning process

Номер патента: US09490144B2. Автор: Tsutomu Ogihara,Takeru Watanabe. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2016-11-08.

Organic polymer for forming organic anti-reflective coating layer, and organic composition including the same

Номер патента: KR101115089B1. Автор: 김재현,김덕배,김상정. Владелец: 주식회사 동진쎄미켐. Дата публикации: 2012-02-29.

Organic polymer for forming organic anti-reflective coating layer, and organic composition including the same

Номер патента: KR20060096629A. Автор: 김재현,김덕배,김상정. Владелец: 주식회사 동진쎄미켐. Дата публикации: 2006-09-13.

Ultraviolet absorber, composition for forming a resist under layer film, and patterning process

Номер патента: TW201612166A. Автор: Tsutomu Ogihara,Daisuke Kori. Владелец: Shinetsu Chemical Co. Дата публикации: 2016-04-01.

Composition for forming liquid immersion upper layer film, and polymer

Номер патента: US09926462B2. Автор: Kiyoshi Tanaka,Takahiro Hayama,Motoyuki Shima,Kazunori KUSABIRAKI. Владелец: JSR Corp. Дата публикации: 2018-03-27.

Composition for forming liquid immersion upper layer film, and polymer

Номер патента: US09540535B2. Автор: Kiyoshi Tanaka,Takahiro Hayama,Motoyuki Shima,Kazunori KUSABIRAKI. Владелец: JSR Corp. Дата публикации: 2017-01-10.

ULTRAVIOLET ABSORBER, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS

Номер патента: US20160053087A1. Автор: OGIHARA Tsutomu,KORI Daisuke. Владелец: . Дата публикации: 2016-02-25.

Composition for forming titanium-containing resist underlayer film and patterning process

Номер патента: KR101822223B1. Автор: 츠토무 오기하라,다카후미 우에다,세이이치로 다치바나,요시노리 다네다. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2018-01-25.

Composition for forming titanium-containing resist underlayer film and patterning process

Номер патента: US9188866B2. Автор: Tsutomu Ogihara,Takafumi Ueda,Seiichiro Tachibana,Yoshinori Taneda. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2015-11-17.

Quaternary ammonium salt compound, composition for forming a resist under layer film, and patterning process

Номер патента: KR101840909B1. Автор: 츠토무 오기하라,다케루 와타나베. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2018-03-21.

Composition for forming liquid immersion upper layer film, and polymer

Номер патента: US20170073541A1. Автор: Kiyoshi Tanaka,Takahiro Hayama,Motoyuki Shima,Kazunori KUSABIRAKI. Владелец: JSR Corp. Дата публикации: 2017-03-16.

Composition for forming liquid immersion upper layer film, and polymer

Номер патента: WO2012043762A1. Автор: 島　基之,孝弘羽山,一憲草開,希佳田中. Владелец: Jsr株式会社. Дата публикации: 2012-04-05.

Method for producing composition for forming PZT-based ferroelectric thin film and method for forming PZT-based ferroelectric thin film using the composition

Номер патента: JP6075152B2. Автор: 信幸曽山,英章桜井,桜井　英章,曽山　信幸,土井　利浩,利浩土井. Владелец: Mitsubishi Materials Corp. Дата публикации: 2017-02-08.

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

Номер патента: US20190198341A1. Автор: Tsutomu Ogihara,Naoki Kobayashi,Kazumi Noda,Seiichiro Tachibana,Yusuke Biyajima,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2019-06-27.

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

Номер патента: US11018015B2. Автор: Tsutomu Ogihara,Naoki Kobayashi,Kazumi Noda,Seiichiro Tachibana,Yusuke Biyajima,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2021-05-25.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound

Номер патента: EP4459377A2. Автор: Daisuke Kori,Takashi Sawamura. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-11-06.

Material For Forming Organic Film, Substrate For Manufacturing Semiconductor Device, Method For Forming Organic Film, Patterning Process, And Compound

Номер патента: US20240363335A1. Автор: Daisuke Kori,Takashi Sawamura. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-31.

Organic film composition, method for forming organic film and patterning process using this, and heat-decomposable polymer

Номер патента: US09372404B2. Автор: Kazumi Noda,Toshihiko Fujii,Takeshi Kinsho,Seiichiro Tachibana,Takeru Watanabe,Toshiharu Yano. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2016-06-21.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

Номер патента: US20240295816A1. Автор: Naoki Kobayashi,Daisuke Kori,Shohei Iwamori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-09-05.

Resist compound for photolithography, method for forming the same, and method for manufacturing semiconductor devices using the same

Номер патента: US20240255849A1. Автор: JINKYUN Lee,Gayoung KIM,Yejin KU. Владелец: Inha University Research and Business Foundation. Дата публикации: 2024-08-01.

Polymer for forming metal-containing film, composition for forming metal-containing film, and patterning process

Номер патента: EP4390547A1. Автор: Naoki Kobayashi,Daisuke Kori,Shohei Iwamori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-06-26.

Mask for forming organic layer pattern, forming method of organic layer pattern, and manufacturing method of organic light emitting diode display using the same

Номер патента: US09583709B2. Автор: Joon Gu LEE,Yeon Hwa LEE,Ji Young CHOUNG,Jin Baek CHOI,Hyun Sung Bang,Young Woo Song,Kyu Hwan Hwang,Jae Sik KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-02-28.

Method for forming multi-layer film and patterning process

Номер патента: US09785049B2. Автор: Jun Hatakeyama,Daisuke Kori. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-10-10.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US20230244149A1. Автор: Tsutomu Ogihara,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2023-08-03.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US20210026246A1. Автор: Tsutomu Ogihara,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2021-01-28.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US12085857B2. Автор: Tsutomu Ogihara,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-09-10.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: EP3796086A1. Автор: Tsutomu Ogihara,Takeru Watanabe,Yusuke Biyajima,Yusuke Kai. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2021-03-24.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: EP3686256A1. Автор: Tsutomu Ogihara,Masaki Ohashi,Tsukasa Watanabe,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2020-07-29.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US12001138B2. Автор: Tsutomu Ogihara,Takeru Watanabe,Yusuke Biyajima,Yusuke Kai. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-06-04.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US11385544B2. Автор: Tsutomu Ogihara,Masaki Ohashi,Tsukasa Watanabe,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2022-07-12.

Composition for forming silicon-containing resist underlayer film and patterning process

Номер патента: US20200233303A1. Автор: Tsutomu Ogihara,Masaki Ohashi,Tsukasa Watanabe,Yusuke Biyajima,Masahiro Kanayama. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2020-07-23.

NAND memory cell string having a stacked select gate structure and process for for forming same

Номер патента: US10361215B2. Автор: Michael A. Van Buskirk,Shenqing Fang,YouSeok Suh,Ming Sang Kwan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2019-07-23.

NAND memory cell string having a stacked select gate structure and process for for forming same

Номер патента: US10566341B2. Автор: Michael A. Van Buskirk,Shenqing Fang,YouSeok Suh,Ming Sang Kwan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2020-02-18.

Nand memory cell string having a stacked select gate structure and process for for forming same

Номер патента: US20210082927A1. Автор: Michael A. Van Buskirk,Shenqing Fang,YouSeok Suh,Ming Sang Kwan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2021-03-18.

Nand memory cell string having a stacked select gate structure and process for for forming same

Номер патента: US20180366473A1. Автор: Michael A. Van Buskirk,Shenqing Fang,YouSeok Suh,Ming Sang Kwan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-12-20.

Nand memory cell string having a stacked select gate structure and process for for forming same

Номер патента: US20200168618A1. Автор: Michael A. Van Buskirk,Shenqing Fang,YouSeok Suh,Ming Sang Kwan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2020-05-28.

Nand memory cell string having a stacked select gate structure and process for for forming same

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Compound and organic photoelectric device, image sensor and electronic device including the same

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Process for the preparation of a cayalyst mixture and its use

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Primer composition used for adhesion

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Method of catalytic electrode manufacturing based on heteropoly compounds for hydrogen and methanol fuel elements

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