SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, capable of growing a GaN-based semiconductor region with excellent reproducibility for filling a trench, in a semiconductor device and a manufacturing method of the semiconductor device utilizing the GaN-based semiconductor material having a trench structure.

SOLUTION: A base layer 8 of GaN containing n-type impurities, an embedding layer 10 of AlGaN containing p-type impurities, a coating layer 9 of undoped AlGaN and a surface layer 25 of a material same as that of the base layer 8 are laminated sequentially on the surface of the substrate 6 of GaN containing n-type impurities. The trench 10a, reaching the base layer 8, is formed in the embedding layer 10, the coating layer 9 and the surface layer 25. The base layer 8 is exposed on the bottom surface of the trench 10a. When heat treatment is carried out under this condition, the surface layer 25 of GaN, which is laminated on the surface of the embedding layer 10 of AlGaN, is unstable and mass transport phenomenon is caused by the heat treatment whereby the surface layer is moved onto the surface of the base layer 8 where the surface layer 25 can exist stably thereby forming the filling layer for filling the trench 10a.

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