METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS
The organic light emitting device of the present invention in the embodiment provided such number of bath method relates to organic light emitting display device manufacturing method of the vertical tank costs [...] number are disclosed. Organic light emitting display device is an electron injection electrode electron injecting electrode formed therein between organic function layer including organic light emitting elements, an organic luminous layer the electron hole injection electrode and the electrons injected selectively formed in the main electron injection electrode herein state (excited state) combine in the OLEDs (exciton) generated from a light emitting element and display device to generate light and preferably dispersed (ground state) while falls into are disclosed. A light emitting element and display device in organic light emitting display device is lightweight for monitoring low reverse separate light sources can be made thin, viewing angle, contrast (contrast), in the presence of a MP3 player or excellent response speed since back in television (TV) to expand up to the evacuator citation portable device and for a range of applications. Recently, organic light emitting display device having a high resolution while minimizing cost number tank number etc. to increase demand on a bath method. With a single mask to the gate of the present invention in the embodiment are formed and pixel [...], a manufacturing method of an organic light emitting display device and for [...] number removed [...] number broadcast receiver. In the embodiment of the present invention substrate on one active layer, gate electrode, source data line including the steps of forming a thin film transistor; said straight forming a third material layer; patterning said insulator layer joined forming said via hole exposing one of said source electrode and drain; through said via hole on said thin film transistor and said contact part forming a conductive material layer; forming a conductive layer on said photo resist pattern using the photomask to number 1; said conductive material layer forming the drain electrode said number 1 photosensitive pattern as a mask; said number 1 photo resist pattern number industry association step; and said pixel electrode to expose the upper surface of said photomask, said edge forming a photo resist pattern covering the pixel number 2; including a, a number of organic light emitting display device number bath method [...] substrate. In the embodiment of the present invention in one, said number 1 photosensitive pattern is negative photoresist (negative photoresist) materials, said number 2 can be plated comprises positive photoresist (positive photoresist) material. In the embodiment of the present invention in one, and a battle permeable part and said photomask bantu and territory including number 1, substrates and can be. In the embodiment of the present invention in one, larger than a width of the lower part of said transmission of said number 1 photo resist pattern number 1 number 2 can be. In the embodiment of the present invention in one, the step of forming the photo resist pattern said number 2, forming said photosensitive direct on the pixel electrodes; said to perform an exposure process using the photomask said photosensitive direct; and said pixel electrode layer is to form said opening and said permeable part number 1 corresponding photosensitive direct developing step; can be a. In the embodiment of the present invention in one, opening coincides with said center of said number 1 can be central to the pixel electrode. In the embodiment of the present invention in one, opening lower part of said transmission of said number 1 number 2 number 4 width width may be less than disclosed. In the embodiment of the present invention in one, said number 1 number 4 lower part of said pixel electrode opening width smaller than the clearance width number 3 thereof can. In the embodiment of the present invention in one, said photomask further includes a battle with territory bantu and territory including number 2-permeable part, said number 2 of photomask using a photo resist pattern forming a conductive layer on said transmission additionally includes a number 3, said number 3 photosensitive pattern is plated said number 1 can be the same material. In the embodiment of the present invention in one, said number 3 photosensitive pattern as a mask patterned conductive material forming said auxiliary electrode; and said number 3 photo resist pattern number industry association step; further comprising, the step of developing said photosensitive direct, said opening exposing said number 2 transmission of photomask using a number 2 forming said auxiliary electrode; can be further comprises. In the embodiment of the present invention in one, the center of a center opening said auxiliary electrode said number 2 can be substantially the same. In the embodiment of the present invention in one, said number 3 of the lower part of photo resist pattern can be larger than a width of said number 2 number 5 permeable part number 6. In the embodiment of the present invention in one, said number 2 the photo resist pattern reflow (reflow); can be further comprises. Another aspect of the aforementioned addition, features, hereinafter advantages of drawing, and detailed description of the invention will be clear from claim are disclosed. The number of organic light emitting display device of the present invention in the embodiment may be provided with a bath method, the fifth [...] can be formed with a single mask. The, number tank costs can be process can be simplified. In the embodiment of the present invention Figure 1 shows a organic light emitting display device to visually representing a plane to determine one also are disclosed. Figure 8 shows a method for organic light emitting display device indicating a number tank 2 to also sequentially cross-sectional drawing of Figure 1 are disclosed. The present invention refers to conversion may have various in the embodiment can apply various bar, in the embodiment example are specific detailed description and drawing the broadcast receiver. The effect of the invention and features, achieving the drawing method in the embodiment and an electronic component connected to the reference surface with specifically carry activitycopyright will. In the embodiment in the present invention refers to hereinafter however are limited to rather than the disclosure can be implemented in various forms. Hereinafter, with reference to the attached drawing of the present invention in the embodiment for which is a detailed, with reference to the drawing described when determining the same components or corresponding local impart the drawing code description dispensed the on-sensors other. In the embodiment of in hereinafter, number 1, number 2 the term limiting meaning rather than one component such as other components used to distinguish an object. In the embodiment of in hereinafter, it is apparent that a single representation of the differently in order not providing language translators, comprising plurality of representation. In the embodiment of in hereinafter, comprising or branches disclosed such as term articles feature specification, meaning that the presence or components and, one or more other features or components may be added the possibility number pre-times are not correct. In the embodiment of in hereinafter, film, region, such as component parts which are above or on when it, as well as immediately above any other portions of the when, other film intermediate, region, such as when component comprises a unit interposed. In descriptions or a reduced and apparatus for facilitating the drawing near the components can be. For example, size and thickness of each configuration exhibited drawing representing a virtual path identifier arbitrarily for facilitating the descriptor, not limited to the present invention are not necessarily shown. In the embodiment implementing a self-propelled when any specific process performed in a different order described disapproval. For example, two process may be performed substantially concurrently continuously described, described herein can be performed in the reverse order. In the embodiment of in hereinafter, film, region, when it is provided to make components, film, region, as well as film components when connected directly, region, component intermediate the other films, region, when interposed indirectly connected components comprises a unit. For example, the specification of the film at the, region, such as when it is electrically connected components, film, region, as well as electrically coming in direct contact with component identification, other film intermediate, region, such as components interposed indirectly when electrical connection comprises a unit. In the embodiment of the present invention Figure 1 shows a organic light emitting display device to visually representing a plane to determine one also are disclosed. The reference also 1, organic light emitting display device includes a display area in which an Image display area that is adjacent the display area (DA) (DA) and comprises (NDA). Display area (DA) (PX) comprising a plurality of pixel areas, each having a uniform predetermined light source emits light of each scanning line (PX) formed. A plurality of pixels with display area (DA) release number encoded Image through light hole. (NDA) the display area are positioned to surround the display area can be (DA), a plurality of pixels with a predetermined display area (DA) (not shown) and data lines (not shown) for transmission of a signal preparation for drive units such as can be. (NDA) surrounding the display area when displayed in Figure 1 is shown but, not limited to the present invention refers to. As another in the embodiment, the wire (NDA) display area formed between the Image display areas which are not, i.e. dead can be reduce. Figure 8 shows a method for organic light emitting display device indicating a number tank 2 to also sequentially cross-sectional drawing of Figure 1 are disclosed. The reference 2 also, Image regions are (DA, also 1) and display area (DA, also 1) placed around the perimeter of the display area (NDA, also 1) including a substrate (100) thin film transistor (TFT) can be formed on. Thin film transistor (TFT) comprises an active layer (121), gate electrode (122), a source electrode (123) and drain (125) comprises. Specifically substrate (100) on the buffer layer (101) is formed, buffer layer (101) semiconductor material on the second active layer (121) can be formed. Active layer (121) is formed, an active layer (121) formed on a sidewall (103) is formed gate insulating layer (103) patterning a conductive material overlies gate electrode (122) can be formed. Gate electrode (122) active layer (121) can be overlapping at least a portion of plane. Substrate (100) as well as a glass substrate, (Polyethylen terephthalate) PET, PEN (Polyethylen naphthalate), polyimide (Polyimide) including like plastic substrate can be like. According to one in the embodiment, substrate (100) whereas the remaining parts formed (100) can be comprising. Wherein, flexible parts formed (100) bent and rigid in RM of a dry and surrounding the ID and password. The flexible parts formed (100) ultra thin glass, metal or plastic can be composed. Buffer layer (101) silicon nitride and/or silicon oxide single layer or more layers can be arranged. Buffer layer (101) (DA) display area of thin film transistor (TFT) can be disposed on. Substrate (100) and buffer layer (101) between the barrier layer (not shown) can be disposed closer to the, buffer layer (101) thereby preventing any can be avoided disclosed. Active layer (121) and a semiconductor material, for example, amorphous silicon (amorphous silicon) comprising silicon or polycrystalline (poly crystalline silicon) can be. The, polycrystalline silicon is formed by amorphous silicon may be disclosed. The RTA (rapid thermal annealing) method for crystallizing amorphous silicon method, SPC (solid phase crystallization) method, ELA (excimer laser annealing) method, MIC (metal induced crystallization) method, MILC (metal induced lateral crystallization) method, such as SLS (sequential lateral solidification) can be crystallized by various method. However the present invention refers to not limited, in the embodiment according to other active layer (121) can be a semiconductor material is organic semiconductor material or oxide. Gate electrode (122) is either formed of single metal, both or more metal, metal alloy consists of either or both or more can be. Gate electrode (122) aluminum (Al), platinum (Pt), palladium (Pd), is (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu) metal select from among one or more single or multi-layer can be formed. Gate electrode (122) is formed gate electrode (122) so as to cover the interlayer insulating film (105) can be formed, an interlayer insulating film (105), gate insulating layer (103) simultaneously removed to form active layer (121) of at least 2 (C1, C2) exposing the contact hole can be formed. According to one in the embodiment, active layer (121) comprising amorphous silicon (poly crystalline silicon) (C1, C2) can be exposed through a contact hole region is active layer (121) be a of source and drain regions. Source and drain regions and silver doped polycrystalline silicon region, i.e. be a conductor region. According to one in the embodiment, doping (doping) can be performed after formation of a gate electrode. Buffer layer (101), gate insulating layer (103), and insulating interlayers (105) the display area (DA) (NDA) can be extends as far as a non-display area, the display area (NDA) substrate disposed on (100) to expose edge region of the buffer layer (101), gate insulating layer (103), an interlayer insulating film (105) is of special number can be disclosed. (NDA) display area for buffer layer from the substrate (101), gate insulating layer (103), and insulating interlayers (105) number of hypoglycemic agent can be performed concurrently (C1, C2) forming contact hole process. Contact hole (C1, C2) is formed, an interlayer insulating film (105) is formed by patterning a conductive material overlies and active layer (121) of source regions and drain regions that are each coupled to a source electrode (123) and drain (125) can be formed. On the other hand, power supply interconnection (127) has a source electrode (123) and drain (125) located same layer, can be formed from the same material. Power supply interconnection (127) of the organic (OLED) counter electrode (190) a power voltage (VSS) can be [...] number. A source electrode (123) and drain (125) has a conductivity good the first conductive single layer or multiple main, active layer (121) of source regions and drain regions can be connected. A source electrode (123) and drain (125) for example, aluminum (Al), platinum (Pt), palladium (Pd), is (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu) metal select from among one or more single or multi-layer can be formed. In the embodiment according to thin film transistor (TFT) is one gate electrode (122) active layer is (121) placed on top of a top gate type (top gate type) but, in the embodiment according to the present invention refers to a thin film transistor (TFT) is number one if not other gate electrode (122) active layer is (121) arranged in a lower section of bottom gate type (bottom gate type) implementation being. Gate insulating layer (103) and insulating interlayers (105) single layer or multiple main inorganic material, for example, silicon oxide (SiO2 ), Silicon nitride (SiNx ), Silicon oxynitride (SiON), aluminum oxide (Al2 O3 ), Titanium oxide (TiO2 ), Tantalum oxide (Ta2 O5 ), Method for manufacturing hafnium oxide (HfO2 ), And/or zinc oxide (ZrO2 ) Can be like. The reference also 3, substrate (100) thin film transistor (TFT) on covering contact part (109) formed on the substrate. Contact part (109) a thin film transistor (TFT) covers, thin film transistor (TFT) is formed on the top surface can be planarizing such as protein kinases. Contact part (109) single layer or multiple organic material main disclosed. However, the present invention refers to the number not one, in the embodiment according to other contact part (109) is, organic insulating inorganic insulating layer be a composite laminate. Contact part (109) (VIA) patterning a via hole is formed on the substrate. Number 1 via hole (VIA1) has a source electrode (123) and drain (125) can be is exposed by either. In drawing drain (125) is exposed by conventional pressure to the subject e.g. described but, is not limited. In other in the embodiment, number 1 via hole (VIA1) has a source electrode (123) is exposed by can be. The power supply interconnection via hole number 2 (VIA2) (127) is exposed by can be. The reference also 4, contact part (109) on the thin film transistor through the via hole (TFT) which is connected to a conductive layer (171) is formed, a conductive layer (171) number 1 on photosensitive medium material layer (130') can be formed. A conductive layer (171) are indium composition for producing cable (ITO; indium tin oxide), indium [...] (IZO; indium zinc oxide), [...] (ZnO; zinc oxide), indium oxide (In2 O3 ; Indium oxide), indium gallium oxide (IGO; indium gallium oxide), and aluminum (AZO; aluminium zinc oxide) including at least one or more selected from the group a [...] be a transparent conductive oxide. Other as in the embodiment, a conductive layer (171) is the transparent conductive oxides in addition to (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), niobium (Nd), iridium (Ir), such as chromium (Cr) can be further includes a metal reflection film. Photosensitive is stacked on number 1 (130') in an area except the number and shading part is a hypoglycemic agent, exposure is formed on the remaining negative photoresist (negative photoresist) can be material. Photosensitive is stacked on number 1 (130') can be emit light using a photomask (M). (MP1) has light transmitted through the photomask (M) comprising permeable part number 1 can be. Specifically photomask (M) has light with the number 1 (MP1) to block light permeable part and a light shielding part (MS) can be. The reference also 5, photosensitive is stacked on number 1 (130') so that the material in response to the gun tree [...], areas that are not irradiated with laser light through the light shielding unit (MS) number and wetting ability through developing process (developing), (MP1) region is irradiated with laser light permeable part number 1 through number 1 plated (131) in which the residual as follows. The, plated number 1 (131) width (W1) of the lower part of number 1 (MP1) of width (W2) can be greater than the permeable part number 1 number 2. Specifically, photosensitive is stacked on number 1 (130') the exposure process carried out with the exposure amount, plated number 1 (131) of the width (W1) of the lower part of number 1 (MP1) number 1 number 2 number 1 greater than the width (W2) permeable part plated (131) can be formed. Plated number 1 (131) is extended electrode (170) that are patterned, pixel electrode (170) number 3 width (W3) of the plated number 1 (131) number 1 width (W1) of the lower part of substantially are the same. A wave type, pixel electrode (170) of the width (W3) greater than width (W2) of number 3 (MP1) can be permeable part number 1 number 2. Drawing number 1 for facilitating the descriptions to plated (131) is illustrated as a structure having a reverse taper but, is not limited. Photosensitive is stacked on number 1 (130') irradiated with light such that a portion of the negative photoresist layer [...] material remain so, exposure amount adjusting number 1 plated (131) may be a scratch structure is formed, a method for forming a taper construction may be filled. On the other hand, has light transmitted through the photomask (M) comprising permeable part number 2 (MP2) can be. Plated number 1 (131) a step for forming a via, a conductive layer (171) number 1 on plated (131) and spaced from one another, corresponding to the number 3 permeable part number 2 (MP2) plated (133) can be together form. Plated number 3 (133) number 5 width (W5) of the lower part of number 2 (MP2) number 6 (W6) number 3 greater than the width of the permeable part plated (133) can be formed. Plated number 3 (133) through auxiliary electrode (175) that are patterned, auxiliary electrode (175) of the width (W7) plated number 3 number 7 (133) number 5 width (W5) of the lower part of substantially are the same. In other words, auxiliary electrode (175) number 7 (W7) number 2 (MP2) number 6 (W6) of width greater than the width of the permeable part can be. Wherein, auxiliary electrode (175) includes a power source wiring (127) thereof with (190) electrically connecting, power supply voltage (VSS) opposed to each other on electrode (190) and an exhaust port of a bus electrode can be. Auxiliary electrode (175) thin film (170) which is located in the same layer, can be the same material. In the present invention auxiliary electrode (175) power supply wiring (127) and electrically connected to the electrodes at a but when, not limited. Then, plated number 1 (131) and plated number 3 (133) mask conductive layer (171) by etching (etching), pixel electrode (170) and an auxiliary electrode (175) can be formed. As aforementioned, pixel electrode (170) of the width (W3) number 1 number 2 width (W2) of number 3 (MP1) larger than that in the crystal, auxiliary electrode (175) number 7 (W7) number 2 (MP2) number 6 (W6) of width greater than the width of the permeable part can be. Pixel electrode (170) and an auxiliary electrode (175) is formed, plated number 1 (131) and plated number 3 (133) number can be a stand-alone. Plated number 1 (131) and plated number 3 (133) is stripping (stripping) or ashing (ashing) number 1308. through wetting ability. 6 also reference surface, pixel electrode (170) and an auxiliary electrode (175) covering the pixel electrode (170) and an auxiliary electrode (175) (not shown) can be applied on photosensitive is stacked on number 2. Number 1 number 2 (not shown) photosensitive is stacked on the photosensitive medium material layer (130') as opposed to, residual and photo-portion, which is formed on a positive photoresist (positive photoresist) or of special exposure in an area except the number can be material. Number 2 (not shown) consists of polyimide can be photosensitive organic material such as photosensitive medium material layer. Number 2 (not shown) using photosensitive is stacked on the photomask (M) can be irradiating. Photomask (M) is photosensitive is stacked on number 1 (130') by the irradiation of the light used in the same photomask are disclosed. Such a photomask (M) (MP1) as number 1 and number 2 is permeable part comprising (MP2) can be permeable part. (MP1) permeable part number 1 and number 2 (MP2) (not shown) irradiated light through permeable part number 2 and number of special photosensitive is stacked on a first buffer between the conductive, pixel electrode (170) and an auxiliary electrode (175) (edge) edge of covering plated number 2 (140) can be formed. Plated number 2 (140) thin film (170) on the upper part of the opening number 1 (OP1), auxiliary electrode (175) can be a number 2 (OP2) expose the upper surface of the opening. The, one using the photomask to the gate (170) and plated number 2 (140) layer is formed, a pixel electrode (170) center of plated number 2 (140) of number 1 (OP1) can be coincident with the center of the opening. Similarly, auxiliary electrode (175) of number 2 (OP2) matches the center of the center opening can be. Number 1 to number 1 (MP1) is applied to the opening (OP1) is permeable part, number 2 (OP2) permeable part number 2 (MP2) is opening corresponding with each other. The, opening of the lower part of number 1 (OP1) number 4 (W4) number 1 (MP1) width (W2) is smaller than the width of permeable part number 2, number 2 (OP2) opening of the lower part of number 8 (W8) number 2 (MP2) number 6 width (W6) of the permeable part width may be less than disclosed. As one in the embodiment, plated number 2 (140) of the line (M) applied to an exposure amount by, plated number 2 (140) to said opening (OP1) such as number 1 and number 2 opening (OP2) can be formed. Other as in the embodiment, the number 1 and number 2 (MP2) permeable part (MP1) photomask (M) permeable part (edge) edge of the transmittance adjusting unit (HT) can be arranged. A half-tone (halftone) or slit (silt) transmittance controlled unit (HT) be turned. Number 1 and number 2 (MP1) permeable part (MP2) (edge) edge of permeable part number 2 (not shown) disposed transmittance adjusting unit (HT) is photosensitive is stacked on the lower part of the light projected on the number 1 and number 2 (OP2) tapers to opening opening (OP1) can be. The process number 1 through number 4 width (W4) of the lower part of opening (OP1) formed thin film (170) number 3 of width (W3) may be less than disclosed. The, plated number 2 (140) thin film (170) (edge) edge of sufficiently thereof can cover. Similarly, number 2 (OP2) opening of the lower part of auxiliary electrode is number 8 width (W8) (175) (W7) since than width of number 7, auxiliary electrode (175) (edge) edge of sufficiently thereof can cover. Plated number 2 (140) pixel definition main disclosed. The reference also 7, plated number 2 (140) capable of reflow by applying heat (reflow). Plated number 2 (140) by thermal reflow (thermal reflow) board to pixel electrode (170) and an auxiliary electrode (175) at least one edge area thereof can completely cover. Pixel electrode (170) formed by the chamber when exposed edges of the opposite electrode (190) can be short and, to prevent this reflow process for the plated number 2 (140) pixel electrodes (170) so as to cover the at least one edge area can be. The reference also 8, pixel electrode (170) of plated number 2 (140) is not covered by an organic luminous layer on (180) is formed, an organic luminous layer (180) counter electrode (190) by forming organic light emitting device (OLED) can be formed. Auxiliary electrode (175) is not formed on organic 200b, organic light emitting device (OLED) extending from the second electrode (190) can be formed. A counter electrode (190) (DA) formed only the display area, the display area is be no (NDA). Not shown but, after counter electrode (190) and at least one organic layer including at least one inorganic film on paper bag layer thin film can be formed. An organic luminous layer (180) can be composed of organic or polymeric organic material is a mineral, pixel electrode (170) and a counter electrode (190) between an organic luminous layer (180) (hole injection layer) in addition to the hole injection layer, hole transport layer (hole transport layer), and at least one layer of an electron transport layer (electron transport layer) (electron injection layer) can be further arranged. According to one in the embodiment, pixel electrode (170) and a counter electrode (190) between the layers can be arranged in a variety of other functions in addition to the above-mentioned layer. An organic luminous layer (180) is one organic light-emitting device (OLED) can be respectively disposed, in this case, organic light emitting device (OLED) covering the best (180) organic light-emitting device (OLED) red is depending on the type of, each emit light of green and blue can be. However, the present invention refers to not limited to, a plurality of organic covering (180) is one organic light-emitting element (OLED) can be disposed. For example, red, green, and blue light of a plurality of electron emitting an organic luminous layer (180) can be emitted vertically layered or the PVC. In this case emitted white light heat conversion layer or color filter can be further predetermined color into color. Said red, green, and blue as well as the exemplary, not limited to the combination of the color for emitting white light. A counter electrode (190) can be a variety of conductive material. For example, a counter electrode (190) lithium (Li), calcium (Ca), lithium fluoride (LiF), aluminum (Al), magnesium (Mg) and silver (Ag) can it includes at least one selected from the group including a, either a single layer or multi-layer can be formed. In the case of rear view-emitting said counter electrode (190) may be a reflective electrode, said counter electrode in the case of front-emitting (190) can be transparent or semi electrode. In the embodiment according to one method of the present invention thin film of organic light emitting display device number bath (170) and a pixel justice just is plated number 2 (140) can be formed using one photomask, the number can be significantly shorten the [...][...] the forming groove (tact time). The present invention refers to drawing example embodiment shown in and described with reference to an exemplary to the but only, if the person with skill in the art art therefrom in various deformation and equally to the other embodiment examples will understand enabling. The, technical idea of the present invention defined by appended claim of true technology protection range generated by the will. 100: substrate 101: buffer layer 103: gate insulating layer 105: interlayer dielectric 121: active layer 122: gate electrode 123: source electrode 125: drain 127: power supply interconnection 131: plated number 1 133: plated number 3 140: plated number 2 170: pixel electrode 175: auxiliary electrode 180: an organic luminous layer 190: counter electrode According to an embodiment of the present invention, provided is a method for manufacturing an organic light emitting display apparatus which comprises the steps of: forming a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode on a substrate; forming an insulating material layer covering the thin film transistor; forming a via hole exposing any one of the source electrode and the drain electrode by patterning the insulating material layer; forming a conductive material layer connected to the thin film transistor on the insulating material layer through a via hole; forming a first photosensitive pattern on the conductive material layer by using a photomask; forming a pixel electrode by patterning the conductive material layer by using the first photosensitive pattern as a mask; removing the first photosensitive pattern; and forming a second photosensitive pattern covering the edge of the pixel electrode by exposing an upper surface of the pixel electrode by using the photomask. COPYRIGHT KIPO 2017 Activated layer, gate electrode, source data line including the steps of forming a thin film transistor; said straight forming a third material layer; patterning said insulator layer joined forming said via hole exposing one of said source electrode and drain; through said via hole on said thin film transistor and said contact part forming a conductive material layer; forming a conductive layer on said photo resist pattern using the photomask to number 1; said conductive material layer forming the drain electrode said number 1 photosensitive pattern as a mask; said number 1 photo resist pattern number industry association step; and said pixel electrode to expose the upper surface of said photomask, said edge forming a photo resist pattern covering the pixel number 2; including a, number bath method of organic light emitting display device. According to Claim 1, photosensitive pattern is negative photoresist material such that said number 1 (negative photoresist), plated comprises positive photoresist (positive photoresist) material including said number 2, number bath method of organic light emitting display device. According to Claim 1, said photomask bantu and territory including number 1 and a battle and permeable part, and substrates including, number bath method of organic light emitting display device. According to Claim 3, larger than a width of the lower part of said transmission of said number 1 photo resist pattern number 1 number 2, number bath method of organic light emitting display device. According to Claim 3, the step of forming the photo resist pattern said number 2, forming said photosensitive direct on the pixel electrodes; said to perform an exposure process using the photomask said photosensitive direct; and said pixel electrode layer is to form said opening and said permeable part number 1 corresponding photosensitive direct developing step; including a, number bath method of organic light emitting display device. According to Claim 5, put on a center pixel electrode said opening said number 1, number bath method of organic light emitting display device. According to Claim 5, opening width smaller than said width of said number 1 number 2 number 4 lower part of permeable part, organic light emitting display device number of bath method. According to Claim 5, opening width is less than said number 1 number 3 number 4 lower part of said pixel electrode width, number bath method of organic light emitting display device. According to Claim 5, said photomask further includes a battle with territory bantu and territory including number 2-permeable part, said number 2 of photomask using a photo resist pattern forming a conductive layer on said transmission additionally includes a number 3, said number 3 photosensitive pattern is plated and same material including said number 1, number bath method of organic light emitting display device. According to Claim 9, said number 3 photosensitive pattern as a mask patterned conductive material forming said auxiliary electrode; and said number 3 photo resist pattern number industry association step; further comprising, the step of developing said photosensitive direct, said opening exposing said number 2 of photomask using a transmission forming said auxiliary electrode number 2; further including, organic light emitting display device number of bath method. According to Claim 10, central to the center of said opening substantially the same auxiliary electrode said number 2, number bath method of organic light emitting display device. According to Claim 9, said number 3 larger than a width of the lower part of photo resist pattern number 5 said number 2 the reflection part of number 6, number bath method of organic light emitting display device. According to Claim 1, the photo resist pattern reflow (reflow) said number 2; further including, number bath method of organic light emitting display device.







