Semiconductor light-emitting device

27-09-2001 дата публикации
Номер:
US2001024460A1
Автор:
Принадлежит:
Контакты:
Номер заявки: 01-94-8667
Дата заявки: 30-05-2001



A light-emitting diode has a GaN-based multi-layer structure arranged on a sapphire substrate. A pair of electrode pads are arranged on a light-output face of the multi-layer structure. The first and second electrode pads have a total projected area set at 25% or less of that of the light-output face. The electrode pads are connected to electrode pads on a mount frame by solder wiring layers arranged on an insulating film covering the side wall of the multi-layer structure.