Phase change memory devices and fabrication methods thereof

06-10-2009 дата публикации

Номер:

US7599216B2

Автор: Dong-Seok Suh, Jin-seo Noh, Mi-Jeong Song, Vassili Leniachine, Yoon-Ho Khang

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

G G0 G09 G09B G09B1 G09B1/G09B1/0 G09B1/06 G09B19 G09B19/G09B19/0 G09B19/08 H H1 H10 H10B H10B6 H10B63 H10B63/H10B63/3 H10B63/30 H10N H10N7 H10N70 H10N70/H10N70/0 H10N70/06 H10N70/068 H10N70/2 H10N70/23 H10N70/231 H10N70/8 H10N70/82 H10N70/826 H10N70/8265 H10N70/84 H10N70/841 H10N70/8413 H10N70/88 H10N70/882 H10N70/8825 H10N70/8828 H10N70/884 Y Y1 Y10 Y10S Y10S9 Y10S97 Y10S977 Y10S977/Y10S977/7 Y10S977/75 Y10S977/754

IPC - классификация

G G0 G09 G09B G09B1 G09B1/G09B1/0 G09B1/06 G09B19 G09B19/G09B19/0 G09B19/08 G09B3 G09B3/G09B3/0 G09B3/02

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