METHOD FOR PATTERNING SILICIDES IN THE SUBMICROMETER RANGE AND COMPONENTS SO PRODUCED

12-09-2002 дата публикации

Номер:

WO0002071452A2

Автор: ZHAO, Quing-Tai, KLUTH, Patrick, MANTL, Siegfried

Принадлежит:

Контакты:

Номер заявки: DE0200387

Дата заявки: 02-02-2002

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The invention relates to a self-aligned patterning method for producing submicrometer patterns in silicide layers on a substrate. The inventive method is characterized by applying a metal layer to a substrate, said metal layer being capable of reacting with the substrate to give a silicide layer. Masks are then applied to the metal layer. The distribution of stresses generated by the mask is changed by producing in said mask cuts, that is notches that extend to the surface of the metal layer formed. On the bottom of such a notch the electric field is regularly stronger. A voltage-dependent solid state reaction (silicidation) generates the desired nanometer pattern of the silicide layer formed. For example, the silicidation reaction takes only place in the area below the mask while on the bottom of the notch no silicidation takes place. The invention provides a method for producing, in combination with some further process steps, various MOSFETs.

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CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/281 H01L21/2812 H01L21/28123 H01L21/285 H01L21/2851 H01L21/28518 H01L21/2853 H01L21/28537 H01L21/7 H01L21/76 H01L21/768 H01L21/7680 H01L21/76802 H01L21/7683 H01L21/76831 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/665 H01L29/6654 H01L29/66545 H01L29/666 H01L29/6660 H01L29/66606

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/285 H01L21/3 H01L21/33 H01L21/336 H01L21/7 H01L21/76 H01L21/768