PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

26-09-2013 дата публикации

Номер:

WO2013141141A1

Автор: KOBAYASHI, Yusuke, YOSHIMURA, Takashi

Принадлежит: 富士電機株式会社

Контакты:

Номер заявки: JP73-05-201310

Дата заявки: 14-03-2013

[0000]

A production method for a semiconductor device, that includes: an injection step in which proton injection occurs from the rear surface of a first conductivity-type semiconductor substrate (101); and a forming step in which, after the injection step, a first conductivity-type first semiconductor area (101a) having a higher impurity concentration than the semiconductor substrate (101) is formed, by annealing the semiconductor substrate (101) in a furnace. The forming step uses a furnace in a hydrogen atmosphere, and uses a hydrogen volume concentration for the furnace annealing of 0.5%-4.65%. As a result, said production method is capable of reducing crystallization defects during donor generation by proton injection, as well as increasing donor rates.

[1]

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/26 H01L21/263 H01L21/3 H01L21/32 H01L21/322 H01L21/3223 H01L21/324 H01L29 H01L29/H01L29/0 H01L29/06 H01L29/061 H01L29/0619 H01L29/3 H01L29/32 H01L29/36 H01L29/4 H01L29/40 H01L29/402 H01L29/6 H01L29/66 H01L29/661 H01L29/6612 H01L29/66128 H01L29/663 H01L29/6634 H01L29/66348 H01L29/7 H01L29/73 H01L29/739 H01L29/7397 H01L29/8 H01L29/86 H01L29/861 H01L29/8611

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/26 H01L21/265 H01L21/3 H01L21/32 H01L21/329 H01L21/33 H01L21/336 H01L29 H01L29/H01L29/0 H01L29/06 H01L29/3 H01L29/32 H01L29/36 H01L29/7 H01L29/73 H01L29/739 H01L29/7397 H01L29/78 H01L29/8 H01L29/86 H01L29/861 H01L29/868

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