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Gallium nitride-based compound semiconductor laser and method of manufacturing the same

Номер патента: US6118801A
Опубликовано: 12-09-2000
Автор(ы): Genichi Hatakoshi, Hidetoshi Fujimoto, Johji Nishio, Masahiro Yamamoto, Masayuki Ishikawa, Shinya Nunoue
Принадлежит: Toshiba Corp
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