Projecting electrode structure having a double-layer conductive layer.

Projecting electrode structure having a double-layer conductive layer

Номер патента: US5668410A
Опубликовано: 16-09-1997
Автор(ы): Mitsuhiko Yamamoto
Принадлежит: Casio Computer Co Ltd
Получить PDF файл: Открыть в новом окне

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Directly bonded metal structures having aluminum features and methods of preparing same

Номер патента: US20240222315A1. Автор: Cyprian Emeka Uzoh. Владелец: Adeia Semiconductor Bonding Technologies Inc. Дата публикации: 2024-07-04.

Directly bonded metal structures having aluminum features and methods of preparing same

Номер патента: WO2024145034A1. Автор: Cyprian Emeka Uzoh. Владелец: Adeia Semiconductor Bonding Technologies Inc.. Дата публикации: 2024-07-04.

Semiconductor structure having copper pillar within solder bump and manufacturing method thereof

Номер патента: US20240006360A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-04.

Electrode structure having improved shape, and electronic device comprising the electrode structure

Номер патента: EP3985720A1. Автор: Dario Paci,Fabrizio CERINI,Silvia Adorno,Marco Salina. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-04-20.

Electrode structure having improved shape, and electronic device including the electrode structure

Номер патента: US20220123105A1. Автор: Dario Paci,Fabrizio CERINI,Silvia Adorno,Marco Salina. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-04-21.

Electrode structure having improved shape, and electronic device including the electrode structure

Номер патента: US12068362B2. Автор: Dario Paci,Fabrizio CERINI,Silvia Adorno,Marco Salina. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-08-20.

Chip structure having redistribution layer and fabrication method thereof

Номер патента: US8097491B1. Автор: Hung-Yuan Hsu,Sui-An Kao. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2012-01-17.

Semiconductor device with reliable connection between projective electrode and conductive wire of the substrate

Номер патента: US6344372B1. Автор: Takatoshi Suzuki,Rieka Ohuchi. Владелец: NEC Corp. Дата публикации: 2002-02-05.

Semiconductor package structure having hollow chamber and bottom substrate and package process thereof

Номер патента: US09508676B1. Автор: Yen-Ting Chen,Cheng-Hung Shih,Yung-Wei Hsieh,Shu-Chen Lin,Fu-Yen Ho. Владелец: Chipbond Technology Corp. Дата публикации: 2016-11-29.

Double-layer conductive led photoelectric glass with voltage compensation and manufacturing process thereof

Номер патента: US20200376813A1. Автор: Zhiming Huang. Владелец: Imgs Smart Glass Technologies Fujian Co Ltd. Дата публикации: 2020-12-03.

Method of forming a double-layer light-absorbing electroconductive structure

Номер патента: RU2714273C1. Автор: Евгений Алексеевич Гудилин,Андрей Андреевич Петров,Сергей Анатольевич Фатеев,Алексей Борисович Тарасов,Николай Андреевич Белич,Алексей Юрьевич Гришко,Наталья Николаевна Шлёнская. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ). Дата публикации: 2020-02-13.

Semiconductor devices having a double-layer interconnection structure

Номер патента: US5198884A. Автор: Tetsuya Ueda,Hiroshi Nishimura,Teruhito Ohnishi,Kohsaku Yano. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1993-03-30.

Method of manufacturing a semiconductor device, in which a double layer-consisting of poly si and a silicide-present on a layer of silicon oxide is etched in a plasma

Номер патента: CA1243133A. Автор: Alfred J. Van Roosmalen,Anton P.M. Van Arendonk. Владелец: Anton P.M. Van Arendonk. Дата публикации: 1988-10-11.

Method of manufacturing a semiconductor device by plasma etching of a double layer

Номер патента: US4698126A. Автор: Anton P. M. Van Arendonk,Alfred J. Van Roosmalen. Владелец: US Philips Corp. Дата публикации: 1987-10-06.

Method of mechanical separation for a double layer transfer

Номер патента: US20240021461A1. Автор: Ionut Radu,Marcel Broekaart,Didier Landru. Владелец: Soitec SA. Дата публикации: 2024-01-18.

Integrated device comprising interconnect structures having an inner interconnect, a dielectric layer and a conductive layer

Номер патента: EP4052287A1. Автор: Yue Li,Yangyang Sun,Li-Sheng WENG. Владелец: Qualcomm Inc. Дата публикации: 2022-09-07.

Integrated device comprising interconnect structures having an inner interconnect, a dielectric layer and a conductive layer

Номер патента: WO2021086491A1. Автор: Yue Li,Yangyang Sun,Li-Sheng WENG. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2021-05-06.

Method of producing a double layer having a hetero-junction for a storage electrode of a camera device

Номер патента: US4359488A. Автор: Bernd Heimann. Владелец: Heimann GmbH. Дата публикации: 1982-11-16.

Electrode structure of a carrier substrate of a semiconductor device

Номер патента: GB2368719B. Автор: Manabu Mizusaki. Владелец: NEC Corp. Дата публикации: 2003-04-02.

Pad electrode structure and organic light-emitting display apparatus including the pad electrode structure

Номер патента: US09640598B2. Автор: Sun Park,Yul-Kyu Lee,Kyung-Hoon Park,Yeong-Ho Song,Won-Ho JANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-05-02.

Semiconductor package structure having thermal management structure

Номер патента: US12087662B1. Автор: Chun-Ming Lin. Владелец: Individual. Дата публикации: 2024-09-10.

Bump structure having a side recess and semiconductor structure including the same

Номер патента: US09824992B2. Автор: Chen-Shien Chen,Tin-Hao Kuo,Yen-Liang Lin,Chih-Horng Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-21.

Bump structure having a side recess and semiconductor structure including the same

Номер патента: US12087718B2. Автор: Chen-Shien Chen,Tin-Hao Kuo,Yen-Liang Lin,Chih-Horng Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Copper Bump Structures Having Sidewall Protection Layers

Номер патента: US20150111342A1. Автор: Wen-Chih Chiou,Jing-Cheng Lin,Hsin-Yu Chen,Po-Hao Tsai,Cheng-Lin Huang,Yan-Fu Lin,Fang Wen Tsai,Ya-Hsi Hwung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-23.

Bump structure having a side recess and semiconductor structure including the same

Номер патента: US20190326240A1. Автор: Chen-Shien Chen,Tin-Hao Kuo,Yen-Liang Lin,Chih-Horng Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-10-24.

Multi-chip stack structure having through silicon via and method for fabrication the same

Номер патента: US20090032928A1. Автор: Chien-Ping Huang,Chin-Huang Chang,Jung-Pin Huang,Chi-Hsin Chiu,Chiang-Cheng Chiang. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2009-02-05.

Intergrated Circuits Device Having a Reinforcement Structure

Номер патента: US20080128892A1. Автор: Hsiao Che Wu,Wen Li Tsai,Yu Min Tsai. Владелец: Promos Technologies Inc. Дата публикации: 2008-06-05.

Semiconductor package having a substrate structure with selective surface finishes

Номер патента: US09935066B2. Автор: Robert Hartmann,Thomas Scott Morris. Владелец: Qorvo US Inc. Дата публикации: 2018-04-03.

Method of forming an electronic device structure having an electronic component with an on-edge orientation and related structures

Номер патента: US20210043589A1. Автор: Shaun Bowers. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-02-11.

Method for manufacturing a chip package having a coating layer

Номер патента: US09627228B1. Автор: Sheng-I Huang,Chi-Chung Yu,Ying-Lin Chen,Shih-Chun Chen,Ta-Hao Chang,I-Fong Wu. Владелец: Powertech Technology Inc. Дата публикации: 2017-04-18.

Semiconductor structure having thermal backside core

Номер патента: US09881847B2. Автор: Nathan Perkins. Владелец: Avago Technologies General IP Singapore Pte Ltd. Дата публикации: 2018-01-30.

Semiconductor structure having thermal backside core

Номер патента: US09472484B2. Автор: Nathan Perkins. Владелец: Avago Technologies General IP Singapore Pte Ltd. Дата публикации: 2016-10-18.

Integrated circuit component and package structure having the same

Номер патента: US10957610B2. Автор: Ming-Fa Chen,Hsien-Wei Chen,Chao-Hsiang Yang,Tzuan-Horng LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-23.

Semiconductor package having a substrate structure with selective surface finishes

Номер патента: US20170040273A1. Автор: Robert Hartmann,Thomas Scott Morris. Владелец: Qorvo US Inc. Дата публикации: 2017-02-09.

Thin film transistor with two gates protruding from scan line under a double-layer channel

Номер патента: US09472674B2. Автор: Kuo-Lung Fang,Yi-Chun Kao,Hsin-Hua Lin,Chih-Lung Lee,Po-Li Shih. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2016-10-18.

Double sided interdiffusion process and structure for a double layer heterojunction focal plane array

Номер патента: US5846850A. Автор: Chang-Feng Wan,Peter D. Dreiske. Владелец: Raytheon TI Systems Inc. Дата публикации: 1998-12-08.

METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT BY MEANS OF A PLASMA-PROCESSING METHOD FOR A DOUBLE LAYER MADE OF POLYSILICIUM AND SILICIDE ON A SILICON OXIDE LAYER.

Номер патента: DE3679577D1. Автор: Roosmalen Alfred Jan Van,Arendonk Anton Petrus Mari Van. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1991-07-11.

Component Carrier Comprising a Double Layer Structure

Номер патента: US20200329555A1. Автор: Schlaffer Erich,Gavagnin Marco,Schulz Gernot,Silvano de Sousa Jonathan. Владелец: . Дата публикации: 2020-10-15.

METHOD OF MECHANICAL SEPARATION FOR A DOUBLE LAYER TRANSFER

Номер патента: US20160358805A1. Автор: Radu Ionut,Broekaart Marcel,Landru Didier. Владелец: . Дата публикации: 2016-12-08.

METHOD FOR THE SELF-ALIGNMENT OF A DOUBLE LAYER OF POLYCRYSTALLINE SILICON, IN AN INTEGRATED CIRCUIT DEVICE, BY MEANS OF AN OXIDATION OPERATION

Номер патента: FR2543738A1. Автор: Pierangelo Pansana. Владелец: SGS ATES Componenti Elettronici SpA. Дата публикации: 1984-10-05.

Method of mechanical separation for a double layer transfer

Номер патента: AU2016203094A1. Автор: Ionut Radu,Marcel Broekaart,Didier Landru. Владелец: Soitec SA. Дата публикации: 2016-12-22.

AUTOMATIC ALIGNMENT ENGRAVING PROCESS OF A DOUBLE LAYER OF POLYCRYSTALLINE SILICON

Номер патента: FR2330146A1. Автор: . Владелец: Intel Corp. Дата публикации: 1977-05-27.

Method of mechanical separation for a double layer transfer

Номер патента: US10910250B2. Автор: Ionut Radu,Marcel Broekaart,Didier Landru. Владелец: Soitec SA. Дата публикации: 2021-02-02.

Electrode structure of light emitting device

Номер патента: US09893257B2. Автор: De-Shan Kuo,Chun-Hsiang Tu,Ting-Chia Ko,Po-Shun Chiu. Владелец: Epistar Corp. Дата публикации: 2018-02-13.

Channel structures having protruding portions in three-dimensional memory device and method for forming the same

Номер патента: US12035524B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-09.

Conductive substrate having double layer conductive film and method of manufacturing thereof

Номер патента: KR101694856B1. Автор: 신권우,김윤진. Владелец: 전자부품연구원. Дата публикации: 2017-01-11.

Electrode structure for a semiconductor devices

Номер патента: US4587547A. Автор: Yoshihiko Mizushima,Yoshihito Amemiya,Takayuki Sugeta. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1986-05-06.

Electrode structure for a semiconductor device

Номер патента: CA1150417A. Автор: Yoshihiko Mizushima,Yoshihito Amemiya,Takayuki Sugeta. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1983-07-19.

Integrated device comprising interconnect structures having an inner interconnect, a dielectric layer and a conductive layer

Номер патента: US20210125951A1. Автор: Yue Li,Yangyang Sun,Li-Sheng WENG. Владелец: Qualcomm Inc. Дата публикации: 2021-04-29.

Method for manufacturing a photodetector for sensing light having a wavelength within a wide range

Номер патента: US5665423A. Автор: Ming-Kwei Lee. Владелец: National Science Council. Дата публикации: 1997-09-09.

Method of Producing an Integrated Power Transistor Circuit Having a Current-Measuring Cell

Номер патента: US20170186863A1. Автор: Britta Wutte. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-06-29.

Integrated power transistor circuit having a current-measuring cell

Номер патента: US09634137B2. Автор: Britta Wutte. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-04-25.

Integrated circuit structure having dies with connectors

Номер патента: US09653423B2. Автор: Jing-Cheng Lin,Cheng-Lin Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-16.

Stacked semiconductor package structure having films and method for manufacturing the films

Номер патента: US20020151102A1. Автор: CHEN PENG,Wen Lee,Jichen Wu,Nai Yeh,Meng Tsai,C.F. Wang. Владелец: Kingpak Technology Inc. Дата публикации: 2002-10-17.

Semiconductor packages having a dam structure

Номер патента: US20220384291A1. Автор: Dongho Kim,Jangwoo Lee,JongBo Shim,Hwanpil PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-01.

Semiconductor packages having a dam structure

Номер патента: US20210242101A1. Автор: Dongho Kim,Jangwoo Lee,JongBo Shim,Hwanpil PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-05.

Package substrate, method for making the same, and package structure having the same

Номер патента: US09735097B1. Автор: Yi-Ho Chen. Владелец: Qi Ding Technology Qinhuangdao Co Ltd. Дата публикации: 2017-08-15.

Manufacturing process for substrate structure having component-disposing area

Номер патента: US09646852B2. Автор: Ming-Hao Wu,Cheng-Jui Chang. Владелец: Unimicron Technology Corp. Дата публикации: 2017-05-09.

Semiconductor module having a conductor member for reducing thermal stress

Номер патента: US09853009B2. Автор: Yoshiyuki Deguchi,Masakazu Tani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-12-26.

Bonding electrode structure of flip-chip led chip and fabrication method

Номер патента: US10276750B2. Автор: Chen-Ke Hsu,Zhibai ZHONG,Chia-En Lee,Junyong KANG,Lixun Yang,Jinjian ZHENG. Владелец: Xiamen Sanan Optoelectronics Technology Co Ltd. Дата публикации: 2019-04-30.

Semiconductor structure having vias with different dimensions and manufacturing method thereof

Номер патента: US20230369264A1. Автор: Shing-Yih Shih,Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-16.

Systems and methods for facilitating a double-layer restriction subnet architecture using subnet specific restrictions within data streamed using hierarchical subnet restrictions

Номер патента: US12081532B1. Автор: Aharon Baruch Haber,Shobhit Maini,Haiping Choo. Владелец: Citigroup Technology Inc. Дата публикации: 2024-09-03.

System and method for on-demand insulation between layers of a double-layered window

Номер патента: EP4426099A1. Автор: Alexander Paul. Владелец: Individual. Дата публикации: 2024-09-11.

Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer

Номер патента: US20020050639A1. Автор: Yoshitaka Aiba,Toshio Hamano,Mitsutaka Sato. Владелец: Fujitsu Ltd. Дата публикации: 2002-05-02.

Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

Номер патента: EP4325580A3. Автор: Tahir Ghani,Allen B. Gardiner,Charles H. Wallace,Mohammad Hasan,Leonard P. GULER,Aryan NAVABI-SHIRAZI,Mohit K. HARAN. Владелец: Intel Corp. Дата публикации: 2024-09-04.

Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

Номер патента: EP4199044A1. Автор: Tahir Ghani,Allen B. Gardiner,Charles H. Wallace,Mohammad Hasan,Leonard P. GULER,Aryan NAVABI-SHIRAZI,Mohit K. HARAN. Владелец: Intel Corp. Дата публикации: 2023-06-21.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: AU2019336103A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2020-12-17.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: EP3847684A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2021-07-14.

Nitride Structures Having Low Capacitance Gate Contacts Integrated with Copper Damascene Structures

Номер патента: MY195186A. Автор: Jeffrey R Laroche,Thomas E Kazior,Eduardo M Chumbes,Kelly P Ip. Владелец: Raytheon Co. Дата публикации: 2023-01-11.

Integrated circuit structures having dielectric anchor void

Номер патента: EP4333072A3. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER. Владелец: Intel Corp. Дата публикации: 2024-07-10.

Integrated circuit structures having dielectric anchor void

Номер патента: EP4333072A2. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER. Владелец: Intel Corp. Дата публикации: 2024-03-06.

PiN diode structure having surface charge suppression

Номер патента: US10971538B2. Автор: John J. Drab,Christian M. BOEMLER,Justin Gordon Adams Wehner. Владелец: Raytheon Co. Дата публикации: 2021-04-06.

Insulated gate semiconductor device having a shield electrode structure and method

Номер патента: US09530883B2. Автор: Zia Hossain,Shengling DENG. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-12-27.

Semiconductor structure with enlarged gate electrode structure and method for forming the same

Номер патента: US09748350B2. Автор: Yi-Chun Lo,Wen-Jia HSIEH,Bo-Wen HSIEH,Mi-Hua LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current

Номер патента: US09431557B2. Автор: Markus Weyers,Hans-Joachim Würfl,Andrea Knigge. Владелец: Forschungsverbund Berlin FVB eV. Дата публикации: 2016-08-30.

Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

Номер патента: US20240154037A1. Автор: Tahir Ghani,Allen B. Gardiner,Charles H. Wallace,Mohammad Hasan,Leonard P. GULER,Aryan NAVABI-SHIRAZI,Mohit K. HARAN. Владелец: Intel Corp. Дата публикации: 2024-05-09.

Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

Номер патента: EP4325580A2. Автор: Tahir Ghani,Allen B. Gardiner,Charles H. Wallace,Mohammad Hasan,Leonard P. GULER,Aryan NAVABI-SHIRAZI,Mohit K. HARAN. Владелец: Intel Corp. Дата публикации: 2024-02-21.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: US20200083167A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2020-03-12.

Integrated circuit structures having metal gate plug landed on dielectric dummy fin

Номер патента: WO2023121794A1. Автор: Guillaume Bouche,Andy Chih-Hung Wei. Владелец: Intel Corporation. Дата публикации: 2023-06-29.

Pin diode structure having surface charge suppression

Номер патента: US20150035014A1. Автор: John J. Drab,Christian M. BOEMLER,Justin Gordon Adams Wehner. Владелец: Raytheon Co. Дата публикации: 2015-02-05.

PiN DIODE STRUCTURE HAVING SURFACE CHARGE SUPPRESSION

Номер патента: WO2015020805A1. Автор: John J. Drab,Christian M. BOEMLER,Justin Gordon Adams Wehner. Владелец: Raytheon Company. Дата публикации: 2015-02-12.

PiN DIODE STRUCTURE HAVING SURFACE CHARGE SUPPRESSION

Номер патента: EP3031082A1. Автор: John J. Drab,Christian M. BOEMLER,Justin Gordon Adams Wehner. Владелец: Raytheon Co. Дата публикации: 2016-06-15.

Pin diode structure having surface charge suppression

Номер патента: US20160086998A1. Автор: John J. Drab,Christian M. BOEMLER,Justin Gordon Adams Wehner. Владелец: Raytheon Co. Дата публикации: 2016-03-24.

Integrated circuit structures having dielectric anchor void

Номер патента: US20240145568A1. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER. Владелец: Intel Corp. Дата публикации: 2024-05-02.

Power semiconductor device having a trench with control and field electrode structures

Номер патента: US10529811B2. Автор: Thomas Feil,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2020-01-07.

Power Semiconductor Device Having a Trench with Control and Field Electrode Structures

Номер патента: US20190172916A1. Автор: Thomas Feil,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-06-06.

Bottom electrode structure and method of forming the same

Номер патента: US20200388757A1. Автор: Chih-Chao Yang,Baozhen Li,Andrew Tae Kim. Владелец: International Business Machines Corp. Дата публикации: 2020-12-10.

Nonvolatile memory device having a ferroelectric layer

Номер патента: US20220399371A1. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2022-12-15.

Nonvolatile memory device having a ferroelectric layer

Номер патента: US12108606B2. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2024-10-01.

Semiconductor device having a trench with different electrode materials

Номер патента: US09899488B2. Автор: Martin Henning Vielemeyer,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-02-20.

Insulated gate semiconductor device having a shield electrode structure and method

Номер патента: US09842925B2. Автор: Zia Hossain,Shengling DENG. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-12-12.

Semiconductor structure with enlarged gate electrode structure and method for forming the same

Номер патента: US20210305387A1. Автор: Yi-Chun Lo,Wen-Jia HSIEH,Bo-Wen HSIEH,Mi-Hua LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-30.

Structure having different gate dielectric widths in different regions of substrate

Номер патента: US20230326924A1. Автор: Hong Yu,Anton V. Tokranov,Edward P. Reis, JR.. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-12.

Semiconductor device having a plurality of fins and method for fabricating the same

Номер патента: US09659932B2. Автор: Yu-Lien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-23.

Group iii-nitride structure having successively reduced crystallographic dislocation density regions

Номер патента: WO2018183176A1. Автор: William E. Hoke,Theodore D. Kennedy,Brian D. Schultz,Amanda Kerr. Владелец: Raytheon Company. Дата публикации: 2018-10-04.

Group iii-nitride structure having successively reduced crystallographic dislocation density regions

Номер патента: EP3602608A1. Автор: William E. Hoke,Theodore D. Kennedy,Brian D. Schultz,Amanda Kerr. Владелец: Raytheon Co. Дата публикации: 2020-02-05.

Cooling chip structures having a jet impingement system and assembly having the same

Номер патента: US20200161217A1. Автор: Shailesh N. Joshi,Naoya TAKE. Владелец: Toyota Motor Engineering and Manufacturing North America Inc. Дата публикации: 2020-05-21.

Method for fabricating a semiconductor structure having heterogeneous crystalline orientations

Номер патента: SG150479A1. Автор: Liu Jinping,HSIA Liang Choo,Zhou Mei Sheng,Alex KH SEE. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2009-03-30.

Fabrication of integrated circuit structures having uniformity among varying gate trench widths

Номер патента: US20240178227A1. Автор: Venkata Aditya Addepalli,Shyam Benegal KADALI. Владелец: Intel Corp. Дата публикации: 2024-05-30.

Method of Making a Flexible Optoelectronic Device Having Inverted Electrode Structure

Номер патента: US20130130423A1. Автор: Ching-Fuh Lin,Kao-Hua Tsai. Владелец: National Taiwan University NTU. Дата публикации: 2013-05-23.

Upper electrode structure and plasma processing apparatus

Номер патента: US20240249907A1. Автор: Tetsuji Sato. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-07-25.

Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion

Номер патента: WO2004095554A2. Автор: Jeffrey M. Peterson. Владелец: Raytheon Company. Дата публикации: 2004-11-04.

Methods for preparing AlN based template having Si substrate and GaN based epitaxial structure having Si substrate

Номер патента: US12020925B2. Автор: Hong Zhou,LU Hao,Yue Hao,Zhihong Liu,Junwei Liu,Jincheng Zhang,Weihang Zhang,Yachao Zhang,Kunlu SONG,Shenglei ZHAO. Владелец: Xidian University. Дата публикации: 2024-06-25.

Manufacturing process of a vertical-conduction misfet device with gate dielectric structure having differentiated thickness and vertical-conduction misfet device thus manufacture

Номер патента: US20100167481A1. Автор: Giuseppe Arena,Angelo Magri',Domenico Repici,Orazio Battiato,Fabrizio Marco Di Paola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2010-07-01.

Integrated circuit structures having differentiated channel sizing

Номер патента: US20230317808A1. Автор: Tahir Ghani,Rishabh Mehandru,Cory Weber,Brian Greene,Sukru Yemenicioglu,Clifford Ong. Владелец: Intel Corp. Дата публикации: 2023-10-05.

Integrated circuit structures having differentiated interconnect lines in a same dielectric layer

Номер патента: US12080643B2. Автор: Tahir Ghani,Jack T. Kavalieros,Shem O. Ogadhoh,Yih Wang,Bernhard Sell,Juan G. ALZATE VINASCO,Pei-Hua Wang,Chieh-Jen Ku,Abhishek A. Sharma,Travis W. LaJoie,Allen B. Gardiner,Blake C. Lin. Владелец: Intel Corp. Дата публикации: 2024-09-03.

Flash memory cell structure having separate program and erase electron paths

Номер патента: US20230253507A1. Автор: Sundar Chetlur,Maxim Klebanov,James McClay,Thomas S. Chung. Владелец: Allegro Microsystems Inc. Дата публикации: 2023-08-10.

Semiconductor device having a through contact

Номер патента: US20140299972A1. Автор: Thomas Gross,Hermann Gruber,Markus Zundel,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-10-09.

Semiconductor structure having test and transistor structures

Номер патента: US20120319110A1. Автор: Zhengmao Zhu,Abhishek Dube,Viorel Ontalus,Kathryn T. Schonenberg. Владелец: Individual. Дата публикации: 2012-12-20.

Semiconductor structures having a gate field plate and methods for forming such structure

Номер патента: US20160149006A1. Автор: John P. Bettencourt,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2016-05-26.

Semiconductor structures having deep trench capacitor and methods for manufacturing the same

Номер патента: US20240332347A1. Автор: Li-Han Lin,Szu-Yu Hou. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-03.

Semiconductor structures having deep trench capacitor and methods for manufacturing the same

Номер патента: US20240355871A1. Автор: Li-Han Lin,Szu-Yu Hou. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-24.

Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same

Номер патента: US09735244B2. Автор: Chih-Chang CHENG,Ruey-Hsin Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-15.

Bipolar transistor structure having split collector region and method of making the same

Номер патента: US09647065B2. Автор: Kun-Ming Huang,Fu-Hsiung Yang,Long-Shih LIN,Po-Tao Chu,Chih-Heng Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

LED packaging structure having stacked arrangement of protection element and LED chip

Номер патента: US09646957B2. Автор: Tsung-Lin Lu,Chih-Min Lin,I-Chun Hung,Jen-Hsiung Lai,Yu-Ching Fang. Владелец: Everlight Electronics Co Ltd. Дата публикации: 2017-05-09.

Semiconductor structures having deep trench capacitor and methods for manufacturing the same

Номер патента: US12148791B2. Автор: Li-Han Lin,Szu-Yu Hou. Владелец: Nanya Technology Corp. Дата публикации: 2024-11-19.

Composition for forming conductive pattern, method of forming conductive pattern using the same, and resin structure having conductive pattern

Номер патента: US20170096566A1. Автор: Ha Na Lee,Chee-Sung PARK,Han Nah Jeong,Eun Kyu Seong,Su Jeong Lee. Владелец: LG Chem Ltd. Дата публикации: 2017-04-06.

Semiconductor structure having fin structures and method of manufacturing the same

Номер патента: US20220115381A1. Автор: Min-Chung Cheng. Владелец: Nanya Technology Corp. Дата публикации: 2022-04-14.

Interconnect structures having varied materials

Номер патента: US20220375791A1. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Guanyu Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-24.

Three-dimensional flash memory device including channel structures having enlarged portions

Номер патента: US20220085068A1. Автор: Jisung Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-17.

Integrated circuit using finfets and having a static random access memory (sram)

Номер патента: WO2007120292A2. Автор: Leo Mathew,James D. Burnett,Byoung W. Min. Владелец: Freescale Semiconductor Inc.. Дата публикации: 2007-10-25.

Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

Номер патента: US12051698B2. Автор: Tahir Ghani,Oleg Golonzka,Daniel G. OUELLETTE,Jeffrey S. LEIB,Daniel B. O'Brien,Dan S. Lavric,Orb Acton,Dax M. CRUM,Lukas BAUMGARTEL. Владелец: Intel Corp. Дата публикации: 2024-07-30.

Semiconductor component, device having a semiconductor component and method of producing semiconductor components

Номер патента: US20220328738A1. Автор: Berthold Hahn,Georg Bogner. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2022-10-13.

Method for forming a semiconductor structure having a strained silicon layer

Номер патента: US20070277728A1. Автор: Mariam G. Sadaka,Bich-Yen Nguyen,Ted R. White,Voon-Yew Thean,Alexander L. Barr. Владелец: Individual. Дата публикации: 2007-12-06.

Insulated gate semiconductor device having shield electrode structure

Номер патента: US20140284710A1. Автор: Zia Hossain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2014-09-25.

Interconnect structure having a via with a via gouging feature and dielectric liner sidewalls for beol integration

Номер патента: US20120199976A1. Автор: Chih-Chao Yang,Chao-Kun Hu. Владелец: International Business Machines Corp. Дата публикации: 2012-08-09.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US7550397B2. Автор: Sung Kyung Jung. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-06-23.

Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials

Номер патента: US20130161699A1. Автор: William E. Hoke. Владелец: Raytheon Co. Дата публикации: 2013-06-27.

Integrated circuit structures having metal gates with tapered plugs

Номер патента: EP4109514A1. Автор: Tahir Ghani,Oleg Golonzka,Daniel Ouellette,Mohammad Hasan,Biswajeet Guha,Leonard P. GULER,Leah SHOER,Pedro FRANCO NAVARRO. Владелец: Intel Corp. Дата публикации: 2022-12-28.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US20070148959A1. Автор: Sung Jung. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-28.

Semiconductor structure having field plates over resurf regions in semiconductor substrate

Номер патента: US20160148994A1. Автор: Shyi-Yuan Wu,Ying-Chieh Tsai,Jeng Gong,Wing-Chor CHAN. Владелец: Macronix International Co Ltd. Дата публикации: 2016-05-26.

Amorphous bottom electrode structure for mim capacitors

Номер патента: US20240304659A1. Автор: Cheng-Yuan Tsai,Hsing-Lien Lin,Jui-Lin Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-12.

Display device having perpendicular electrode structure and method of manufacturing the display device

Номер патента: US20240322097A1. Автор: Jaewook PARK,Junsik Hwang,Kyungwook Hwang,Sanghoon Song,Keunsik Lee,Hakyeol Kim,Eungyeong Lee,Jungwoon SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

Fabrication of gate-all-around integrated circuit structures having tuned upper nanowires

Номер патента: US20240312991A1. Автор: Dan S. Lavric,David J. Towner,Shao Ming Koh. Владелец: Intel Corp. Дата публикации: 2024-09-19.

Fabrication of gate-all-around integrated circuit structures having multi-layer molybdenum metal gate stack

Номер патента: US20240332394A1. Автор: Tahir Ghani,Anand S. Murthy,Tongtawee Wacharasindhu,Dan S. Lavric,Orb Acton,Dax M. CRUM,David J. Towner,Omair Saadat,David N. GOLDSTEIN. Владелец: Intel Corp. Дата публикации: 2024-10-03.

Fabrication of gate-all-around integrated circuit structures having additive metal gates

Номер патента: US12113068B2. Автор: Tahir Ghani,Oleg Golonzka,Dan S. Lavric,Dax M. CRUM,Omair Saadat. Владелец: Intel Corp. Дата публикации: 2024-10-08.

Fabrication of gate-all-around integrated circuit structures having multi-layer molybdenum metal gate stack

Номер патента: EP4439647A1. Автор: Tahir Ghani,David Goldstein,Anand S. Murthy,Tongtawee Wacharasindhu,Dan S. Lavric,Orb Acton,Dax CRUM,David J. Towner,Omair Saadat. Владелец: Intel Corp. Дата публикации: 2024-10-02.

Integrated circuit structures having cut metal gates

Номер патента: US20240347539A1. Автор: Tahir Ghani,Mohammad Hasan,Biswajeet Guha,Leonard P. GULER,Mohit K. HARAN,Alison V. DAVIS. Владелец: Intel Corp. Дата публикации: 2024-10-17.

Fabrication of gate-all-around integrated circuit structures having tuned upper nanowires

Номер патента: EP4432338A1. Автор: Dan S. Lavric,David J. Towner,Shao Ming Koh. Владелец: Intel Corp. Дата публикации: 2024-09-18.

Method of producing a semiconductor device having a ferroelectric gate stack

Номер патента: US12107128B2. Автор: Hans-Joachim Schulze,Thomas Aichinger,Saurabh Roy. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-10-01.

Semiconductor structure having source/drain contacts and method of fabricating thereof

Номер патента: US20240363709A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuan-Lun Cheng,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device having a polycrystalline silicon IGFET

Номер патента: US09917160B2. Автор: Martin Vielemeyer,Oliver Blank,Martin Poelzl,Andrew Christopher Graeme Wood. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-13.

Packaging substrate having a holder, method of fabricating the packaging substrate, package structure having a holder, and method of fabricating the package structure

Номер патента: US09916990B2. Автор: Wen-Lung Lai,Yuan-Liang Lo. Владелец: Unimicron Technology Corp. Дата публикации: 2018-03-13.

Light-emitting assembly having a carrier

Номер патента: US09843162B2. Автор: Alfred Lell,Martin Straβburg,Uwe Strauβ,Jelena Ristic. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2017-12-12.

Method for manufacturing a semiconductor structure having a passivated III-nitride layer

Номер патента: US09761438B1. Автор: Xu Chen,Rongming Chu. Владелец: HRL LABORATORIES LLC. Дата публикации: 2017-09-12.

Single-layer wiring package substrate, single-layer wiring package structure having the package substrate, and method of fabricating the same

Номер патента: US09735080B2. Автор: Wei-Chung Hsiao,Chun-Hsien Lin,Chia-Cheng Chen,Ming-Chen Sun,Tzu-Chieh Shen,Shih-Chao Chiu,Yu-Cheng Pai. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2017-08-15.

Semiconductor structure having integrated snubber resistance

Номер патента: US09627328B2. Автор: Ling Ma,Robert Haase,Hugo Burke,Timothy D. Henson,Kapil Kelkar,Mary Bigglestone,Adam Amali. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-04-18.

Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure

Номер патента: US09531161B2. Автор: Martin Mandl,Alfred Lell,Martin Straβburg,Jelena Ristic. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-12-27.

Semiconductor structure having test device

Номер патента: US09500703B2. Автор: Anil Kumar,William McMahon,Suresh Uppal,Manjunatha Prabhu. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-22.

Memory structure having top electrode with protrusion

Номер патента: US09450183B2. Автор: Chia-Shiung Tsai,Cheng-Yuan Tsai,Yao-Wen Chang,Jian-Shiou Huang,Hsing-Lien Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Semiconductor device having a locally reinforced metallization structure

Номер патента: US09397022B2. Автор: Roman Roth,Frank Umbach. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-07-19.

Integrated circuit structures having memory with backside dram and power delivery

Номер патента: US20230422485A1. Автор: Tahir Ghani,Anand S. Murthy,Rishabh Mehandru,Cory Weber,Sagar SUTHRAM,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2023-12-28.

Integrated circuit structures having memory with backside power delivery

Номер патента: US20230420368A1. Автор: Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2023-12-28.

Engineering change order cell structure having always-on transistor

Номер патента: US20200074041A1. Автор: Wei-Ling Chang,Li-Chun Tien,Shun Li CHEN,Ting Yu CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-05.

Integrated circuit structures having stacked electrostatic discharge (esd) for backside power delivery

Номер патента: EP4394875A1. Автор: DerChang Kau,Andy Chih-Hung Wei,Po-Yao Ke. Владелец: Intel Corp. Дата публикации: 2024-07-03.

Semiconductor structure having self-aligned insulating feature and methods for manufacturing the same

Номер патента: US20240234545A1. Автор: Yi-Hsien Chen,Yi-Ren CHEN,Chun-Ting Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

Номер патента: US12040595B2. Автор: Pablo Acosta Alba,Vincent Reboud,Lara CASIEZ. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2024-07-16.

Conductive line structure having corrugated surface

Номер патента: US20230197610A1. Автор: Juan Boon Tan,Kai Kang,Wanbing YI,Curtis Chun-I HSIEH,Ran Xing Ong. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-06-22.

Integrated circuit structures having backside capacitors

Номер патента: EP4401525A2. Автор: Tahir Ghani,Anand S. Murthy,Pushkar Ranade,Sagar SUTHRAM,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2024-07-17.

Fabrication method for a semiconductor structure having integrated capacitors

Номер патента: US7312115B2. Автор: Harald Seidl,Martin Gutsche. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-12-25.

OPTOELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR LAYER BASED ON GeSn HAVING A SINGLE-CRYSTAL PORTION WITH A DIRECT BAND STRUCTURE AND AN UNDERLYING BARRIER REGION

Номер патента: US20230187567A1. Автор: Pablo Acosta Alba,Vincent Reboud,Lara CASIEZ. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2023-06-15.

Insulated gate bipolar transistor structure having low substrate leakage

Номер патента: US20130161689A1. Автор: Chih-Chang CHENG,Chun Lin Tsai,Ru-Yi Su,Fu-Chih Yang,Jen-Hao Yeh,Ker Hsiao Huo,Leaf YEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-06-27.

Semiconductor structure having both gate-all-around devices and planar devices

Номер патента: US12046684B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Method for fabricating a field-effect transistor having a floating gate

Номер патента: US20030119261A1. Автор: Franz Hofmann,Robert Strenz,Georg Tempel,Robert Wiesner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-06-26.

Transistor structure having an air spacer and method for making the same

Номер патента: US20230290855A1. Автор: Liang Li,Chun Yu Wong,John H Zhang,Heng Yang,Sunil K Singh. Владелец: HeFeChip Corp Ltd. Дата публикации: 2023-09-14.

Wiring structure having double capping structure, manufacturing method thereof, and integrated circuit chip having the same

Номер патента: US11764145B2. Автор: Jaejin Lee,Hana Kim,JaeWha PARK,Dongchan Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-19.

Method for fabricating device structures having a variation in electrical conductivity

Номер патента: US20090203185A1. Автор: Shyue Seng Tan,Elgin Kiok Boone Quek,Lee Wee Teo. Владелец: Individual. Дата публикации: 2009-08-13.

Ic structure with short channel gate structure having shorter gate height than long channel gate structure

Номер патента: US20210272851A1. Автор: Haiting Wang,Hong Yu,Steven J. Bentley. Владелец: GlobalFoundries US Inc. Дата публикации: 2021-09-02.

Method for fabricating device structures having a variation in electrical conductivity

Номер патента: SG155114A1. Автор: Tan Shyue Seng,TEO Lee Wee,Quek Kiok Boone Elgin. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2009-09-30.

Integrated circuit structures having uniform grid metal gate and trench contact plug for tub gates with pyramidal channel structures

Номер патента: US20240312996A1. Автор: Mauro J. Kobrinsky,Anand S. Murthy,Dan S. Lavric,Shao Ming Koh. Владелец: Intel Corp. Дата публикации: 2024-09-19.

Integrated circuit package substrate with microstrip architecture and electrically grounded surface conductive layer

Номер патента: US09972589B1. Автор: Eng Huat Goh,Min Suet LIM,Jiun Hann Sir,Hoay Tien Teoh,Seok Ling Lim. Владелец: Intel Corp. Дата публикации: 2018-05-15.

Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate

Номер патента: US09685452B2. Автор: Youngwoo Park,Changhyun LEE,Heonkyu Lee,Shinhwan Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-20.

Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell

Номер патента: US09666766B2. Автор: Juanita N. Kurtin,Weiwen Zhao. Владелец: Pacific Light Technologies Corp. Дата публикации: 2017-05-30.

Power overlay structure having wirebonds and method of manufacturing same

Номер патента: US09613843B2. Автор: Arun Virupaksha Gowda,Paul Alan McConnelee. Владелец: General Electric Co. Дата публикации: 2017-04-04.

Methods for forming FinFETS having a capping layer for reducing punch through leakage

Номер патента: US09595583B2. Автор: Hoon Kim,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-14.

Semiconductor package structure having an annular frame with truncated corners

Номер патента: US12142598B2. Автор: Tzu-Hung Lin,Chia-Cheng Chang,I-Hsuan Peng,Yi-Jou Lin. Владелец: MediaTek Inc. Дата публикации: 2024-11-12.

Sensor structure having increased thermal stability

Номер патента: US09454978B2. Автор: Eric Singleton,Konstantin Nikolaev,Taras Pokhil,Andrzej Stankiewicz,Mohammed Patwari. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2016-09-27.

Shallow trench isolation structure having a nitride plug

Номер патента: US09443929B2. Автор: Byeong Y. Kim,Shreesh Narasimha. Владелец: International Business Machines Corp. Дата публикации: 2016-09-13.

Package structure having line connected via portions

Номер патента: US20240213167A1. Автор: Tsung-Yu Chen,Hsien-Pin Hu,Tsung-Shu Lin,Wen-Hsin Wei,Chih-Kai Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

Semiconductor image sensor structure having metal-filled trench contact

Номер патента: US20170092669A1. Автор: Sungkwon C. Hong,Gordon M. Grivna,David T. Price,Rick Jerome. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-03-30.

Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices

Номер патента: US20210375618A1. Автор: Marco Racanelli,David J. Howard,Edward Preisler,Paul D. Hurwitz. Владелец: Newport Fab LLC. Дата публикации: 2021-12-02.

Layout structure having a fill element arranged at an angle to a conducting line

Номер патента: US7709962B2. Автор: Georg Georgakos,Bernhard Dobler,Alexander Nielsen. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-05-04.

Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

Номер патента: US12052865B2. Автор: Xiaoxin LIU,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-30.

Semiconductor package structure having ring portion with recess for adhesive and method for forming the same

Номер патента: US11749575B2. Автор: Chen-Shien Chen,Chin-Fu Kao,Hui-Ting Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US12057487B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US11757014B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Heat dissipation structure having heat pipe

Номер патента: US20240102741A1. Автор: Chun-Te Wu,Ching-Ming Yang,Tze-Yang Yeh. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2024-03-28.

Semiconductor structure having buried conductive elements

Номер патента: US20150236024A1. Автор: Kangguo Cheng,Ramachandra Divakaruni,Emre Alptekin,Johnathan E. Faltermeier,Reinaldo A. Vega,Pooja R. Batra. Владелец: International Business Machines Corp. Дата публикации: 2015-08-20.

Memory cell array structure having bit line for reducing signal resistance, memory device including the same, and method of forming the same

Номер патента: US20240196629A1. Автор: Bipul C. Paul,Sandeep Puri,Venkatesh Periyapatna Gopinath. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-06-13.

Semiconductor device structure having dislocation stress memorization and methods of forming the same

Номер патента: US12107163B2. Автор: Tsai-Jung Ho,Tze-Liang Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Pixel array structure having doped active layer with uneven thickness and manufacturing method thereof, array substrate and display device

Номер патента: US09985140B2. Автор: Tiansheng Li. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-29.

Semiconductor structure having a test structure formed in a group III nitride layer

Номер патента: US09947600B2. Автор: Clemens Ostermaier,Bernhard Brunner,Franz Heider. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-04-17.

Method of manufacturing an infrared detector having a micro-cavity and a low refraction index step at an interface with a transparent cap, and associated infrared detector

Номер патента: US09929196B2. Автор: Laurent Frey,Michel Vilain,Jean-Jacques Yon,Jerome Favier. Владелец: Ulis SAS. Дата публикации: 2018-03-27.

Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

Номер патента: US09929085B2. Автор: Anthony K. Stamper,John A. Fitzsimmons,Mukta G. Farooq. Владелец: Globalfoundries Inc. Дата публикации: 2018-03-27.

Semiconductor structures having T-shaped electrodes

Номер патента: US09887089B2. Автор: Adrian D. Williams,Kiuchul Hwang,Dale M. Shaw. Владелец: Raytheon Co. Дата публикации: 2018-02-06.

FinFET structures having silicon germanium and silicon fins with suppressed dopant diffusion

Номер патента: US09837415B2. Автор: Kangguo Cheng,Karthik Balakrishnan,Pouya Hashemi,Alexander Reznicek. Владелец: International Business Machines Corp. Дата публикации: 2017-12-05.

Group III-V device structure having a selectively reduced impurity concentration

Номер патента: US09831312B2. Автор: Michael A. Briere. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-11-28.

Electro-optic structures having a glass strip as a seal

Номер патента: US09766496B2. Автор: William L. Tonar,David J. Cammenga,David A. Theiste,Tammy G. Morgan. Владелец: Gentex Corp. Дата публикации: 2017-09-19.

Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane

Номер патента: US09748095B2. Автор: Young-Jun Park,Seung-Nam Cha,Jung-Inn Sohn,Ji-yeon KU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region

Номер патента: US09741803B2. Автор: Krishnaswamy Ramkumar,Fredrick Jenne,Sagy Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2017-08-22.

Semiconductor image sensor structure having metal-filled trench contact

Номер патента: US09711556B2. Автор: Sungkwon C. Hong,Gordon M. Grivna,David T. Price,Rick Jerome. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-07-18.

Package structure having a laminated release layer and method for fabricating the same

Номер патента: US09673140B2. Автор: Wei-Chung Hsiao,Chia-Cheng Chen,Ming-Chen Sun,Tzu-Chieh Shen,Shih-Chao Chiu,Yu-Cheng Pai,Don-Son Jiang. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2017-06-06.

Semiconductor device having a resistor structure

Номер патента: US09640529B2. Автор: Hyun-Seung Song,Hwi-Chan JUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-02.

Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

Номер патента: US09590118B1. Автор: Jan Hoentschel,Sven Beyer,Elliot John Smith,Nigel Chan. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-07.

Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures

Номер патента: US09589899B2. Автор: Heon-Jong Shin,Hwi-Chan JUN,Yu-Sun Lee,Dae-Hee Weon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Integrated transistor structure having a power transistor and a bipolar transistor

Номер патента: US09564425B2. Автор: Thorsten Meyer,Christoph Kadow,Norbert Krischke. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-02-07.

Devices and methodologies related to structures having HBT and FET

Номер патента: US09559096B2. Автор: Hsiang-Chih Sun,Peter J. Zampardi. Владелец: Skyworks Solutions Inc. Дата публикации: 2017-01-31.

Illumination system of a microlithographic projection exposure apparatus having a temperature control device

Номер патента: US09523922B2. Автор: Severin Waldis,Florian Bach,Armin Werber,Berndt Warm,Daniel Benz. Владелец: CARL ZEISS SMT GMBH. Дата публикации: 2016-12-20.

Gate contact structure having gate contact layer

Номер патента: US09490317B1. Автор: Ryan Ryoung-Han Kim,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Monolithic integrated circuit (MMIC) structure having composite etch stop layer and method for forming such structure

Номер патента: US09478652B1. Автор: Adrian D. Williams. Владелец: Raytheon Co. Дата публикации: 2016-10-25.

Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer

Номер патента: US09428691B2. Автор: Juanita N. Kurtin. Владелец: Pacific Light Technologies Corp. Дата публикации: 2016-08-30.

Air bridge structure having dielectric coating

Номер патента: US09362237B2. Автор: Paul J. Duval,Ward G. Fillmore. Владелец: Raytheon Co. Дата публикации: 2016-06-07.

Semiconductor interconnect structure having a graphene-based barrier metal layer

Номер патента: US09324635B2. Автор: Junjing Bao,Xuesong Li,Shaoning Yao,Samuel S. S. Choi. Владелец: International Business Machines Corp. Дата публикации: 2016-04-26.

Backside emitter solar cell structure having a heterojunction and method and device for producing the same

Номер патента: US11967662B2. Автор: Marcel Koenig,Jun Zhao. Владелец: Meyer Burger Germany GmbH. Дата публикации: 2024-04-23.

Semiconductor package structure having ring portion with recess for adhesive

Номер патента: US20230352356A1. Автор: Chen-Shien Chen,Chin-Fu Kao,Hui-Ting Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Semiconductor structure having a groove located in the semiconductor substrate and connected to the heat transfer layer

Номер патента: US12033911B2. Автор: Zhan Ying,Jie Liu,Lixia Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-09.

Method for forming alignment keys of semiconductor structure and semiconductor structure having alignment keys

Номер патента: US20240055361A1. Автор: Tsung-Yu Yang,Shan-Shi Huang,Shin-Hung Li,Yuan Yu Chung,Che-Hua CHANG,Ruei Jhe Tsao. Владелец: United Microelectronics Corp. Дата публикации: 2024-02-15.

Chip package with redistribution structure having multiple chips

Номер патента: US12046548B2. Автор: Shin-puu Jeng,Po-Hao Tsai,Feng-Cheng Hsu,Shuo-Mao Chen,Po-Yao Chuang,Techi WONG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Photonics structures having a locally-thickened dielectric layer

Номер патента: US20230273369A1. Автор: Yusheng Bian,Steven M. Shank,Shesh Mani Pandey,Judson Holt. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-08-31.

Fan-out package structure having embedded package substrate

Номер патента: US20170077073A1. Автор: Ching-Wen Hsiao,Tzu-Hung Lin,Nai-wei LIU,I-Hsuan Peng,Wei-Che Huang,Chi-Chin Lien. Владелец: MediaTek Inc. Дата публикации: 2017-03-16.

Interconnect structure having fully aligned vias

Номер патента: US20210050260A1. Автор: BALASUBRAMANIAN Pranatharthiharan,Lawrence A. Clevenger,Chanro Park,Christopher J. Penny,Nicholas Anthony Lanzillo. Владелец: International Business Machines Corp. Дата публикации: 2021-02-18.

Fine pattern structures having block co-polymer materials

Номер патента: US20150273790A1. Автор: Cheol Kyu Bok,Myoung Soo Kim,Ki Lyoung Lee,Keun Do Ban,Jung Hyung Lee. Владелец: SK hynix Inc. Дата публикации: 2015-10-01.

A finfet transistor having a tapered subfin structure

Номер патента: WO2018004632A1. Автор: Dewey Gilbert,Tahir Ghani,Jack T. Kavalieros,Anand S. Murthy,Chandra S. Mohapatra,Willy Rachmady,Matthew V. Metz,Sean T. MA. Владелец: Intel Corporation. Дата публикации: 2018-01-04.

Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer

Номер патента: US20030036223A1. Автор: Michael Nuttall,Randhir Thakur,Garry Mercaldi. Владелец: Individual. Дата публикации: 2003-02-20.

Methods for removing photoresist from semiconductor structures having high-k dielectric material layers

Номер патента: US20080176388A1. Автор: Richard J. Carter. Владелец: Individual. Дата публикации: 2008-07-24.

CMOS sense structure having silicon dioxide outer ring around sense region

Номер патента: US20010034092A1. Автор: Jui-Hsiang Pan,Ming-I Chen. Владелец: United Microelectronics Corp. Дата публикации: 2001-10-25.

Photodiode structure having mask to reduce leakage current

Номер патента: US6140670A. Автор: Tsun-Tsai Chang. Владелец: United Microelectronics Corp. Дата публикации: 2000-10-31.

Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

Номер патента: US09966310B1. Автор: Anthony K. Stamper,John A. Fitzsimmons,Mukta G. Farooq. Владелец: Globalfoundries Inc. Дата публикации: 2018-05-08.

Fan-out package structure having embedded package substrate

Номер патента: US09941260B2. Автор: Ching-Wen Hsiao,Tzu-Hung Lin,Nai-wei LIU,I-Hsuan Peng,Wei-Che Huang,Chi-Chin Lien. Владелец: MediaTek Inc. Дата публикации: 2018-04-10.

Electronic package structure having insulated substrate with lands and conductive patterns

Номер патента: US09922919B2. Автор: Ji Young Chung,Gi Jeong Kim,Byong Jin Kim,Won Bae Bang. Владелец: Amkor Technology Inc. Дата публикации: 2018-03-20.

Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same

Номер патента: US09892970B2. Автор: Anthony K. Stamper,John A. Fitzsimmons,Mukta G. Farooq. Владелец: Globalfoundries Inc. Дата публикации: 2018-02-13.

Display array structure having embedded magnetic force generator and assembly method thereof

Номер патента: US09847356B2. Автор: Tsau-Hua Hsieh,Chia-Hao Tsai,Jen-Chien Peng. Владелец: Innolux Corp. Дата публикации: 2017-12-19.

Fine pattern structures having block co-polymer materials

Номер патента: US09840059B2. Автор: Cheol Kyu Bok,Myoung Soo Kim,Ki Lyoung Lee,Keun Do Ban,Jung Hyung Lee. Владелец: SK hynix Inc. Дата публикации: 2017-12-12.

Semiconductor structure having epitaxial layers

Номер патента: US09780169B2. Автор: Chih-Kai Hsu,Ssu-I Fu,Yu-Hsiang Hung,Jyh-Shyang Jenq,Yu-Cheng Tung. Владелец: Untied Microelectronics Corp. Дата публикации: 2017-10-03.

Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer

Номер патента: US09577030B2. Автор: Nick Lindert. Владелец: Intel Corp. Дата публикации: 2017-02-21.

Three-dimensional memory structure having self-aligned drain regions and methods of making thereof

Номер патента: US09543320B2. Автор: Yingda Dong,Liang PANG,Jayavel Pachamuthu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-01-10.

Fabrication of fin structures having high germanium content

Номер патента: US09520469B1. Автор: Kangguo Cheng,Karthik Balakrishnan,Pouya Hashemi,Alexander Reznicek. Владелец: International Business Machines Corp. Дата публикации: 2016-12-13.

Semiconductor devices with close-packed via structures having in-plane routing and method of making same

Номер патента: US09484293B2. Автор: Thorbjörn Ebefors,Daniel Perttu. Владелец: SILEX MICROSYSTEMS AB. Дата публикации: 2016-11-01.

Integrated circuit metal gate structure having tapered profile

Номер патента: US09455344B2. Автор: Ming-Yuan Wu,Mong-Song Liang,Harry-Hak-Lay Chuang,Kong-Beng Thei,Chiung-Han Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-27.

Electrode structure of rear electrode of semiconductor substrate, method of its obtaining and sputtered target for use in production of electrode structure

Номер патента: RU2718134C1. Автор: Тецуя КАТО,Йохей МИЗУНО,Тихару ИСИКУРА. Владелец: Танака Кикинзоку Когио К.К.. Дата публикации: 2020-03-30.

Electrode structure to improve rram performance

Номер патента: US20200091425A1. Автор: Ying-Lang Wang,Wen-Ting Chu,Tong-Chern Ong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-19.

Metal pattern structure having positioning layer

Номер патента: US20160141239A1. Автор: Babak Radi,Shih-Hong Chen,Tzu-Wen Chuang. Владелец: WISTRON NEWEB CORP. Дата публикации: 2016-05-19.

Semiconductor structure having a semiconductor substrate and an isolation component

Номер патента: US12119343B2. Автор: Hui Yu,Meng Wang,Yicheng DU. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2024-10-15.

Field effect transistor having a multi-width electrode structure and method for manufacturing the same

Номер патента: US09905690B1. Автор: Yi-Lung Tsai,Po-Wen Yang,Aryadeep Mrinal,Mohammad Amanullah,Shu-Siang Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-27.

MIM capacitors with diffusion-blocking electrode structures and semiconductor devices including the same

Номер патента: US09520460B2. Автор: Tae-Kyun Kim,Jong-Myeong Lee,Hyun-Suk Lee,Jin-Su Lee,Dong-Kyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

Methods of forming articles including metal structures having maximized bond adhesion and bond reliability

Номер патента: US09468986B2. Автор: Martin O'Toole,Ernesto Gene de la Garza. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-18.

Metal pattern structure having positioning layer

Номер патента: US09385084B2. Автор: Babak Radi,Shih-Hong Chen,Tzu-Wen Chuang. Владелец: WISTRON NEWEB CORP. Дата публикации: 2016-07-05.

Semiconductor device having field plate structures and gate electrode structures between the field plate structures

Номер патента: US9691862B2. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-06-27.

Nonvolatile memory device having a ferroelectric layer

Номер патента: US11800719B2. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2023-10-24.

Semiconductor Device Having Field Plate Structures and Gate Electrode Structures Between the Field Plate Structures

Номер патента: US20160204210A1. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-07-14.

Nonvolatile memory device having a ferroelectric layer

Номер патента: US20210175252A1. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2021-06-10.

Flexible transparent electrode structure having superior light transmittance, water permeation resistance and oxygen permeation resistance, method for preparing the same, and organic optoelectronic device using the same

Номер патента: US20230099482A1. Автор: Won-Kook Choi,Keun Yong LIM. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-03-30.

Nonvolatile memory device having a ferroelectric layer

Номер патента: US20220278132A1. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2022-09-01.

Chip package structure having π filter

Номер патента: US6870250B2. Автор: Nai-Shung Chang. Владелец: Via Technologies Inc. Дата публикации: 2005-03-22.

Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Номер патента: US9799729B2. Автор: Franz Hirler,Ralf Siemieniec,Martin Henning Vielemeyer,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-24.

Semiconductor structure having both enhancement mode group iii-n high electron mobility transistors and depletion mode group iii-n high electron mobility transistors

Номер патента: US20210351288A1. Автор: John Logan,Brian D. Schultz,Kiuchul Hwang,Christos THOMIDIS. Владелец: Raytheon Co. Дата публикации: 2021-11-11.

LEDs with efficient electrode structures

Номер патента: US12080832B2. Автор: Steven D. Lester,Frank T. Shum,William W. So. Владелец: Bridgelux Inc. Дата публикации: 2024-09-03.

Electrode structure

Номер патента: US11953461B2. Автор: Masafumi Miyake,Tetsuyoshi Ono,Ukyo Ikeda,Hiroki Nakatsuchi. Владелец: Hitachi High Tech Corp. Дата публикации: 2024-04-09.

Method of making structure having a gate stack

Номер патента: US09831235B2. Автор: Ming Zhu,Harry-Hak-Lay Chuang,Bao-Ru Young,Kuo-Ji Chen,Po-Nien Chen,Ming-Hsiang Song. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-28.

Light emitting device, electrode structure and manufacturing method thereof

Номер патента: US09680123B2. Автор: Chun-Ting Liu,Hsi-Hsuan Yen,Chang-Ying Chen. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2017-06-13.

LEDs with efficient electrode structures

Номер патента: US09627589B2. Автор: Steven D. Lester,Frank T. Shum,William W. So. Владелец: Bridgelux Inc. Дата публикации: 2017-04-18.

Three-dimensional memory structure having a back gate electrode

Номер патента: US09576971B2. Автор: Yanli Zhang,Johann Alsmeier,Akira MATSUDAIRA,Yingda Dong. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-02-21.

Semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Номер патента: US09543386B2. Автор: Franz Hirler,Ralf Siemieniec,Martin Henning Vielemeyer,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-01-10.

Electrode structure for iii-v compound semiconductor element and method of manufacturing the same

Номер патента: CA2019026A1. Автор: Takashi Yano,Naoyuki Yamabayashi. Владелец: Naoyuki Yamabayashi. Дата публикации: 1990-12-16.

Semiconductor device with novel spacer structures having novel configurations

Номер патента: US20190363173A1. Автор: Peter Baars,Hans-Juergen Thees. Владелец: Globalfoundries Inc. Дата публикации: 2019-11-28.

Three-dimensional semiconductor memory devices having a vertical semiconductor pattern

Номер патента: US11839084B2. Автор: JoongShik SHIN,Euntaek JUNG,JiHye YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-05.

Semiconductor Device Having a Trench with Different Electrode Materials

Номер патента: US20170133474A1. Автор: Martin Henning Vielemeyer,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-05-11.

Three-dimensional semiconductor memory device with vertical channels in a connection region having a lower channel pattern contacting the substrate

Номер патента: US11864382B2. Автор: Jongwon Kim,Young-jin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Semiconductor device having a stack including electrodes vertically stacked on a substrate and electronic system including the same

Номер патента: US11728246B2. Автор: Jung-Hwan Kim,Sunggil Kim,Jinhyuk Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-15.

Method of fabricating a cylinder capacitor having a reverse electrode structure

Номер патента: US20020072190A1. Автор: Tzung-Han Lee,King-Lung Wu,Alex Hou. Владелец: United Microelectronics Corp. Дата публикации: 2002-06-13.

Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interface

Номер патента: US12027592B2. Автор: Martin Christopher Holland,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Semiconductor device having buried gate electrode structures

Номер патента: US20150145029A1. Автор: Marko Lemke,Rolf Weis,Stefan Tegen. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2015-05-28.

Semiconductor package structure having a heat dissipation structure

Номер патента: US20190164871A1. Автор: Chih Cheng Lee,Yu-Lin Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2019-05-30.

Electrode structure including transparent electrode structure, and applications thereof

Номер патента: EP1673753A2. Автор: Sadeg M. Faris. Владелец: Reveo Inc. Дата публикации: 2006-06-28.

Semiconductor devices including capacitor structures having improved area efficiency

Номер патента: US20190280083A1. Автор: Eric H. Freeman. Владелец: Micron Technology Inc. Дата публикации: 2019-09-12.

Semiconductor Device with a Termination Mesa Between a Termination Structure and a Cell Field of Field Electrode Structures

Номер патента: US20160064548A1. Автор: Ralf Siemieniec,David Laforet. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-03.

Semiconductor Device with First and Second Field Electrode Structures

Номер патента: US20160260809A1. Автор: Franz Hirler,Martin Vielemeyer. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-09-08.

Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

Номер патента: US09972714B2. Автор: Ralf Siemieniec,David Laforet. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-05-15.

Stripe-shaped electrode structure including a main portion with a field electrode and an end portion terminating the electrode structure

Номер патента: US09837498B2. Автор: Robert Zink,Werner Schwetlick. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-12-05.

Memory devices including capacitor structures having improved area efficiency

Номер патента: US09722014B2. Автор: Eric H. Freeman. Владелец: Micron Technology Inc. Дата публикации: 2017-08-01.

Semiconductor structure having a plurality of conductive paths

Номер патента: US09698099B2. Автор: Yi-Kan Cheng,Feng Wei KUO,Hui Yu Lee,Jui-Feng Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

A method of forming a tantalum-containing gate electrode structure

Номер патента: WO2005104197A1. Автор: Yumiko Kawano,Hideaki Yamasaki,Vijay Narayanan,Kazuhito Nakamura,Gert Leusink,Fenton R. McFeely,John J. Yurkas. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2005-11-03.

Process of fabricating a semiconductor device having cobalt niobate gate electrode structure

Номер патента: US5930632A. Автор: Mark I. Gardner,Mark C. Gilmer. Владелец: Advanced Micro Devices Inc. Дата публикации: 1999-07-27.

Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer

Номер патента: EP3975235A1. Автор: Tahir Ghani,Oleg Golonzka,Dax CRUM,Dan Lavric. Владелец: Intel Corp. Дата публикации: 2022-03-30.

Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriers and methods of forming the same

Номер патента: US20070257370A1. Автор: Jong-Cheol Lee,Jin-Il Lee,Jae-hyun Yeo,Ki-Vin Im,Kyoung-Ryul Yoon,Eun-ae Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-11-08.

Electrode structure and light emitting diode structure having the same

Номер патента: US20150115301A1. Автор: Tzong-Liang Tsai,Tsung-Yu Yang. Владелец: Lextar Electronics Corp. Дата публикации: 2015-04-30.

Electrode structure and light emitting diode structure having the same

Номер патента: US9093613B2. Автор: Tzong-Liang Tsai,Tsung-Yu Yang. Владелец: Lextar Electronics Corp. Дата публикации: 2015-07-28.

Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriers

Номер патента: US20090195962A1. Автор: Jong-Cheol Lee,Jin-Il Lee,Jae-hyun Yeo,Ki-Vin Im,Kyoung-Ryul Yoon,Eun-ae Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-06.

Electrode structure, device comprising the same and method for forming electrode structure

Номер патента: WO2010085081A2. Автор: Sang In LEE. Владелец: SYNOS TECHNOLOGY, INC.. Дата публикации: 2010-07-29.

Transistor including a high-k metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer

Номер патента: US20110104863A1. Автор: Jan Hoentschel,Sven Beyer,Thilo Scheiper,Markus Lenski. Владелец: Individual. Дата публикации: 2011-05-05.

Semiconductor device including trench electrode structures

Номер патента: US11600697B2. Автор: Alim Karmous. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-03-07.

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

Номер патента: US09620636B2. Автор: Franz Hirler,Ralf Siemieniec,Michael Hutzler,Oliver Blank,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-04-11.

Electrode structure of a transistor, and pixel structure and display apparatus comprising the same

Номер патента: US09536963B2. Автор: Kuo-Lung Fang,Yu-Min Lin,Feng-Yuan Gan. Владелец: AU OPTRONICS CORP. Дата публикации: 2017-01-03.

Components including structures having decoupled load paths

Номер патента: EP3437865A1. Автор: Daniel Jason Erno,Darren Lee Hallman,Arun Karthi SUBRAMANIYAN,Ananda Barua,Changjie SUN. Владелец: General Electric Co. Дата публикации: 2019-02-06.

Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

Номер патента: US20080102616A1. Автор: Masayuki Tanaka,Yoshio Ozawa,Kiyotaka Miyano,Yoshitaka Tsunashima,Seiji Ihumiya,Yasumasa Suizu. Владелец: Yasumasa Suizu. Дата публикации: 2008-05-01.

Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding

Номер патента: US5260233A. Автор: Rajiv V. Joshi,Joseph F. Shepard,Taqi N. Buti,Louis L-C. Hsu. Владелец: International Business Machines Corp. Дата публикации: 1993-11-09.

Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels

Номер патента: US6563136B2. Автор: Masafumi Kunii. Владелец: Sony Corp. Дата публикации: 2003-05-13.

Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with an opposite polarity dipole layer

Номер патента: US20230420531A1. Автор: Tahir Ghani,Dan S. Lavric,Orb Acton,Dax M. CRUM,YenTing Chiu,David J. Towner. Владелец: Intel Corp. Дата публикации: 2023-12-28.

Gate-all-around integrated circuit structures having depopulated channel structures

Номер патента: EP3869547A1. Автор: Walid M. Hafez,Jeong Dong KIM,Ting Chang,Rahul RAMASWAMY,Hsu-Yu Chang,Babak Fallahazad,Tanuj Trivedi. Владелец: Intel Corp. Дата публикации: 2021-08-25.

Insulated gated field effect transistor structure having shielded source and method

Номер патента: US20200295189A1. Автор: Joseph Andrew Yedinak,Xiaoli WU. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-09-17.

Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with an opposite polarity dipole layer

Номер патента: EP4300564A1. Автор: Tahir Ghani,Dan S. Lavric,Orb Acton,Dax M. CRUM,David J. Towner,Yen Ting Chiu. Владелец: Intel Corp. Дата публикации: 2024-01-03.

Gate-all-around integrated circuit structures having depopulated channel structures using backside removal approach

Номер патента: EP4105979A1. Автор: Tahir Ghani,Charles Wallace,Leonard GULER. Владелец: Intel Corp. Дата публикации: 2022-12-21.

Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer

Номер патента: EP3975236A1. Автор: Tahir Ghani,Oleg Golonzka,Dan S. Lavric,Dax M. CRUM,Omair Saadat. Владелец: Intel Corp. Дата публикации: 2022-03-30.

Gate-all-around integrated circuit structures having depopulated channel structures

Номер патента: US20210257452A1. Автор: Walid M. Hafez,Jeong Dong KIM,Ting Chang,Rahul RAMASWAMY,Hsu-Yu Chang,Babak Fallahazad,Tanuj Trivedi. Владелец: Intel Corp. Дата публикации: 2021-08-19.

Insulated gated field effect transistor structure having shielded source and method

Номер патента: US20220085213A1. Автор: Joseph Andrew Yedinak,Xiaoli WU. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2022-03-17.

Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers

Номер патента: US20230290852A1. Автор: Tahir Ghani,Dan S. Lavric,Dax M. CRUM,YenTing Chiu,David J. Towner,David N. GOLDSTEIN. Владелец: Intel Corp. Дата публикации: 2023-09-14.

Field Effect Transistor Structure Having Notched Mesa

Номер патента: US20180286947A1. Автор: Kiuchul Hwang. Владелец: Raytheon Co. Дата публикации: 2018-10-04.

Gate-all-around integrated circuit structures having depopulated channel structures

Номер патента: US11581404B2. Автор: Walid M. Hafez,Jeong Dong KIM,Ting Chang,Rahul RAMASWAMY,Hsu-Yu Chang,Babak Fallahazad,Tanuj Trivedi. Владелец: Intel Corp. Дата публикации: 2023-02-14.

Method of manufacturing semiconductor structure having vias with different dimensions

Номер патента: US20230369210A1. Автор: Shing-Yih Shih,Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-16.

Backside emitter solar cell structure having a heterojunction

Номер патента: US20240128392A1. Автор: Marcel Koenig,Jun Zhao. Владелец: Meyer Burger Germany GmbH. Дата публикации: 2024-04-18.

Gate-all-around integrated circuit structures having depopulated channel structures

Номер патента: US20210257453A1. Автор: Walid M. Hafez,Jeong Dong KIM,Ting Chang,Rahul RAMASWAMY,Hsu-Yu Chang,Babak Fallahazad,Tanuj Trivedi. Владелец: Intel Corp. Дата публикации: 2021-08-19.

Insulated gated field effect transistor structure having shielded source and method

Номер патента: US20200365730A1. Автор: Joseph Andrew Yedinak,Xiaoli WU. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-11-19.

Group iii - nitride structure having successively reduced crystallographic dislocation density regions

Номер патента: US20180286954A1. Автор: William E. Hoke,Theodore D. Kennedy,Brian D. Schultz,Amanda Kerr. Владелец: Raytheon Co. Дата публикации: 2018-10-04.

Power semiconductor device having a strain-inducing material embedded in an electrode

Номер патента: US20220406937A1. Автор: Hans-Joachim Schulze,Günter Denifl,Michael Stadtmueller,Oliver Blank,Stefan Karner,Saurabh Roy,Germano Galasso. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2022-12-22.

Power semiconductor device having a strain-inducing material embedded in an electrode

Номер патента: US11728427B2. Автор: Hans-Joachim Schulze,Günter Denifl,Michael Stadtmueller,Oliver Blank,Stefan Karner,Saurabh Roy,Germano Galasso. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-08-15.

Semiconductor structures having deep trench capacitor and methods for manufacturing the same

Номер патента: US20240063254A1. Автор: Li-Han Lin,Szu-Yu Hou. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-22.

Semiconductor structures having deep trench capacitor and methods for manufacturing the same

Номер патента: US20240063255A1. Автор: Li-Han Lin,Szu-Yu Hou. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-22.

Semiconductor structure, electrode structure and method of forming the same

Номер патента: US20170288135A1. Автор: Chung-Yen Chou,Shih-Chang Liu,Yao-Wen Chang,Fu-Ting Sung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-05.

Semiconductor structure, electrode structure and method of forming the same

Номер патента: US20210367145A1. Автор: Chung-Yen Chou,Shih-Chang Liu,Yao-Wen Chang,Fu-Ting Sung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-11-25.

Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system

Номер патента: EP4421884A2. Автор: Gang Chen,Yongqian Wang,Xinqiang Yang. Владелец: Solarlab Aiko Europe Gmbh. Дата публикации: 2024-08-28.

Semiconductor structure, electrode structure and method of forming the same

Номер патента: US20170207385A1. Автор: Chung-Yen Chou,Shih-Chang Liu,Yao-Wen Chang,Fu-Ting Sung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-20.

Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system

Номер патента: AU2024204838A1. Автор: Gang Chen,Yongqian Wang,Xinqiang Yang. Владелец: Guangdong Aiko Solar Energy Technology Co Ltd. Дата публикации: 2024-08-01.

Electrode structure of light emitting diode

Номер патента: US09997672B2. Автор: Hai-Wen Hsu,jia-hong Sun. Владелец: Tekcore Co Ltd. Дата публикации: 2018-06-12.

Touch electrode structure, touch panel and display device

Номер патента: US09952699B2. Автор: Yang Wang,Weiyun HUANG,Yue Long. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-04-24.

Semiconductor structure, electrode structure and method of forming the same

Номер патента: US09711713B1. Автор: Chung-Yen Chou,Shih-Chang Liu,Yao-Wen Chang,Fu-Ting Sung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-18.

Process for producing pre-tin-plated connectors for pv cells and metal foil having a groove structure running in one direction

Номер патента: CA2824105C. Автор: Thomas Booz,Fabian Distelrath. Владелец: Schlenk Metallfolien GmbH and Co KG. Дата публикации: 2018-02-27.

Methods for forming FinFETS having a capping layer for reducing punch through leakage

Номер патента: US9312183B1. Автор: Hoon Kim,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2016-04-12.

Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same

Номер патента: US20050026422A1. Автор: Kyung-Tae Lee,Yoon-hae Kim,Yong-Jun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-02-03.

Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto

Номер патента: US8203189B2. Автор: Masato Koyama,Yoshinori Tsuchiya. Владелец: Toshiba Corp. Дата публикации: 2012-06-19.

Group iii nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

Номер патента: EP2532033A1. Автор: James Ibbetson,Michael John Bergmann,Daniel Carleton Driscoll,Ashonita Chavan,Pablo Cantu-Alejandro. Владелец: Cree Inc. Дата публикации: 2012-12-12.

Optical film structure having a light absorbing layer that improves the contrast of the display apparatus

Номер патента: US9529124B2. Автор: Cheng-Chung Lee,Chia-Yu Wu,Yu-Ju CHAO,Kuo-Chang Lee. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2016-12-27.

Reliable via structures having hydrophobic inner wall surfaces and methods for making the same

Номер патента: EP1064676A1. Автор: Rao V. Annapragada. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-01-03.

Semiconductor structure having a titanium barrier layer

Номер патента: US5926734A. Автор: James Austin Walls. Владелец: Motorola Inc. Дата публикации: 1999-07-20.

Lateral transistor structure having self-aligned base and base contact and method of fabrication

Номер патента: CA1179786A. Автор: Madhukar B. Vora. Владелец: Fairchild Camera and Instrument Corp. Дата публикации: 1984-12-18.

Semiconductor structure having fin with all around gate

Номер патента: US11916151B2. Автор: Kuang-Hsin Chen,Clement Hsingjen Wann,Chih-Hsin Ko,Da-Wen Lin,Chia-Ming Hsu,Yi-Jing Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Method for fabricating layer structure having target topological profile

Номер патента: US11961741B2. Автор: Akiko Kobayashi,Nobuyoshi Kobayashi,Eiichiro Shiba,Yoshinori Ota,René Henricus Jozef Vervuurt. Владелец: ASM IP Holding BV. Дата публикации: 2024-04-16.

Method of manufacturing semiconductor structure having vertical fin with oxidized sidewall

Номер патента: US11588029B2. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-02-21.

Method of manufacturing semiconductor structure having vertical fin with oxidized sidewall

Номер патента: US20220085178A1. Автор: Chin-Ling Huang. Владелец: Nanya Technology Corp. Дата публикации: 2022-03-17.

Trench structure having a void and inductor including the trench structure

Номер патента: US7326625B2. Автор: Chul-ho Chung,Joo-Hyun Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-02-05.

A multi-layered structure having antipad formations

Номер патента: US20230395968A1. Автор: Soren Shams,Hamidreza Kazemi. Владелец: Metawave Corp. Дата публикации: 2023-12-07.

Method of Forming a Semiconductor Structure Having Integrated Snubber Resistance

Номер патента: US20170186861A1. Автор: Ling Ma,Robert Haase,Hugo Burke,Timothy D. Henson,Kapil Kelkar,Mary Bigglestone,Adam Amali. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-06-29.

Gate-all-around integrated circuit structures having strained source or drain structures on gate dielectric layer

Номер патента: EP3930004A1. Автор: Jack T. Kavalieros,Siddharth Chouksey,Anand S. Murthy,Willy Rachmady,Ashish Agrawal,Ryan KEECH,Koustav Ganguly. Владелец: Intel Corp. Дата публикации: 2021-12-29.

Integrated circuit structures having raised epitaxy on channel transistor

Номер патента: US20240006483A1. Автор: Tahir Ghani,Anand S. Murthy,Rishabh Mehandru,Cory Weber,Sagar SUTHRAM,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2024-01-04.

A multi-layered structure having antipad formations

Номер патента: EP4233127A1. Автор: Soren Shams,Hamidreza Kazemi. Владелец: Metawave Corp. Дата публикации: 2023-08-30.

Gate structure having designed profile

Номер патента: US20170317185A1. Автор: Che-Cheng Chang,Kai-Li CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-02.

Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates with etch back process

Номер патента: US20240072145A1. Автор: Megan BECK,Ryan Wood,Joseph BRICE,Krishna T. MARLA,Derek Caselli. Владелец: Intel Corp. Дата публикации: 2024-02-29.

Fabrication of gate-all-around integrated circuit structures having dual metal gates and gate dielectrics with a single polarity dipole layer

Номер патента: US20230290778A1. Автор: Tahir Ghani,Dan S. Lavric,Dax M. CRUM,YenTing Chiu. Владелец: Intel Corp. Дата публикации: 2023-09-14.

Method for fabricating layer structure having target topological profile

Номер патента: US20240128090A1. Автор: Akiko Kobayashi,Nobuyoshi Kobayashi,Eiichiro Shiba,Yoshinori Ota,René Henricus Jozef Vervuurt. Владелец: ASM IP Holding BV. Дата публикации: 2024-04-18.

Gate structure having designed profile

Номер патента: US10529822B2. Автор: Che-Cheng Chang,Kai-Li CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-07.

Fabrication of gate-all-around integrated circuit structures having additive gate structures in a tub architecture

Номер патента: US20230317807A1. Автор: Tahir Ghani,Dan S. Lavric,YenTing Chiu,David J. Towner. Владелец: Intel Corp. Дата публикации: 2023-10-05.

Fabrication of gate-all-around integrated circuit structures having additive gate structures

Номер патента: US20230290851A1. Автор: Tahir Ghani,Dan S. Lavric,YenTing Chiu. Владелец: Intel Corp. Дата публикации: 2023-09-14.

Semiconductor devices including a drain captive structure having an air gap and methods of forming the same

Номер патента: US11862693B2. Автор: Bong Woong Mun,Jeoung Mo KOO. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-01-02.

Method of forming a semiconductor structure having integrated snubber resistance

Номер патента: US9966464B2. Автор: Ling Ma,Robert Haase,Hugo Burke,Timothy D. Henson,Kapil Kelkar,Mary Bigglestone,Adam Amali. Владелец: Infineon Technologies North America Corp. Дата публикации: 2018-05-08.

Semiconductor Structure Having Integrated Snubber Resistance and Related Method

Номер патента: US20160104773A1. Автор: Ling Ma,Robert Haase,Hugo Burke,Timothy D. Henson,Kapil Kelkar,Mary Bigglestone,Adam Amali. Владелец: Infineon Technologies North America Corp. Дата публикации: 2016-04-14.

Light-emitting assembly having a carrier

Номер патента: US20160126702A1. Автор: Uwe Strauss,Martin Strassburg,Alfred Lell,Jelena Ristic. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-05-05.

Semiconductor structure having a passivated iii-nitride layer and method for manufacturing thereof

Номер патента: WO2015171321A1. Автор: Xu Chen,Rongming Chu. Владелец: HRL LABORATORIES, LLC. Дата публикации: 2015-11-12.

Semiconductor device structure having a gate structure and overlying dielectric layer

Номер патента: US11855158B2. Автор: Kuo-Ming Wu,Hong-Shyang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Integrated circuit structures having germanium-based channels

Номер патента: US20240145549A1. Автор: Tahir Ghani,Jack T. Kavalieros,Anand Murthy,Siddharth Chouksey,Seung Hoon Sung,Ashish Agrawal,Harold Kennel,Glenn Glass. Владелец: Intel Corp. Дата публикации: 2024-05-02.

Semiconductor package structure having an annular frame with truncated corners

Номер патента: US20230197684A1. Автор: Tzu-Hung Lin,Chia-Cheng Chang,I-Hsuan Peng,Yi-Jou Lin. Владелец: MediaTek Inc. Дата публикации: 2023-06-22.

Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance

Номер патента: US6512261B2. Автор: Akinori Kinugasa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-01-28.

Method of forming structure having coating layer and structure having coating layer

Номер патента: US11764057B2. Автор: Chun-Hung Chen,Chuan-Pu Liu,Yin-Wei CHENG,Jun-Han Huang,Shih-An Wang,Bo-Liang Peng,Yi-Chang Li. Владелец: Che Inc. Дата публикации: 2023-09-19.

Three-dimensional semiconductor device including a through-via structure having a via liner having protruding portions

Номер патента: US20210125928A1. Автор: Kwangsoo Kim,JoongShik SHIN,Junhyoung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-29.

Semiconductor structure having fin with all around gate and method of manufacturing the same

Номер патента: US20220416090A1. Автор: Kuang-Hsin Chen,Clement Hsingjen Wann,Chih-Hsin Ko,Da-Wen Lin,Chia-Ming Hsu,Yi-Jing Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-29.

Semiconductor package structure having antenna module

Номер патента: US20190198466A1. Автор: Yenheng CHEN,Chengchung LIN,Chentar WU. Владелец: SJ Semiconductor Jiangyin Corp. Дата публикации: 2019-06-27.

Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates

Номер патента: US11990472B2. Автор: Tahir Ghani,William Hsu,Oleg Golonzka,Mohammad Hasan,Biswajeet Guha,Leonard P. GULER,Mohit K. HARAN,Reken Patel,Michael K. Harper,Niels Zussblatt,Jeffrey Miles Tan,Benjamin Kriegel. Владелец: Intel Corp. Дата публикации: 2024-05-21.

Vertical transport field-effect transistor structure having increased effective width and self-aligned anchor for source/drain region formation

Номер патента: US20210391444A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2021-12-16.

Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates

Номер патента: US20240178226A1. Автор: Tahir Ghani,William Hsu,Oleg Golonzka,Mohammad Hasan,Biswajeet Guha,Leonard P. GULER,Mohit K. HARAN,Reken Patel,Michael K. Harper,Niels Zussblatt,Jeffrey Miles Tan,Benjamin Kriegel. Владелец: Intel Corp. Дата публикации: 2024-05-30.

Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities

Номер патента: US8698221B2. Автор: Hanjin Lim,Kiyeon Park,Insang JEON,Yeongcheol Lee,Jun-noh Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-04-15.

Engineering change order cell structure having always-on transistor

Номер патента: US20220164518A1. Автор: Wei-Ling Chang,Li-Chun Tien,Shun Li CHEN,Ting Yu CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-26.

Semiconductor Structure Having Both Gate-All-Around Devices And Planar Devices

Номер патента: US20230369514A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials

Номер патента: EP2700087A1. Автор: William E. Hoke. Владелец: Raytheon Co. Дата публикации: 2014-02-26.

Fabrication of gate-all-around integrated circuit structures having additive gate structures

Номер патента: EP4243073A2. Автор: Tahir Ghani,Dan S. Lavric,YenTing Chiu. Владелец: Intel Corp. Дата публикации: 2023-09-13.

Bottom electrode structure in memory device

Номер патента: US20210242400A1. Автор: Wen-Ting Chu,Chao-Yang Chen,Chun-Yang Tsai,Kuo-Ching Huang,Pili Huang,Cheng-Jun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-05.

Via structure having low interface resistance

Номер патента: US20240178132A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-30.

Compound-eye imaging device having a light shielding block with a stack of multiple flat unit plates

Номер патента: US7525081B2. Автор: Takashi Toyoda,Yasuo Masaki,Yoshizumi Nakao. Владелец: Funai Electric Co Ltd. Дата публикации: 2009-04-28.

Semiconductor structure having a high voltage well region

Номер патента: US20190229206A1. Автор: Manoj Kumar,Chih-Cherng Liao,Chia-hao Lee,Chung-Te Chou,Ya-Han Liang. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2019-07-25.

SEMICONDUCTOR STRUCTURE HAVING A Si SUBSTRATE HETEROINTEGRATED WITH GaN AND METHOD FOR FABRICATING THE SAME

Номер патента: US20200373153A1. Автор: Edward Yi Chang,Chieh-Hsi Chuang,Jessie Lin. Владелец: National Chiao Tung University NCTU. Дата публикации: 2020-11-26.

Wiring structures having intersecting metal patterns

Номер патента: US12009300B2. Автор: Jeonggil Lee,Sukhoon KIM,Sungmyong Park,Chanyang Lee,Honyun Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-11.

Integrated circuit structures having ultra-high conductivity global routing

Номер патента: US20240006416A1. Автор: Tahir Ghani,Anand S. Murthy,Pushkar Ranade,Rishabh Mehandru,Cory Weber,Sagar SUTHRAM,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2024-01-04.

Integrated circuit structures having germanium-based channels

Номер патента: US11923421B2. Автор: Tahir Ghani,Jack T. Kavalieros,Anand Murthy,Siddharth Chouksey,Seung Hoon Sung,Ashish Agrawal,Harold Kennel,Glenn Glass. Владелец: Intel Corp. Дата публикации: 2024-03-05.

Vertical transport field-effect transistor structure having increased effective width and self-aligned anchor for source/drain region formation

Номер патента: US20210057568A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2021-02-25.

Fabrication of gate-all-around integrated circuit structures having additive gate structures

Номер патента: EP4243073A3. Автор: Tahir Ghani,Dan S. Lavric,YenTing Chiu. Владелец: Intel Corp. Дата публикации: 2023-11-01.

Semiconductor structure having contact plug and method of manufacturing the same

Номер патента: US20230282515A1. Автор: Zih-Hong Yang. Владелец: Nanya Technology Corp. Дата публикации: 2023-09-07.

Semiconductor structure having fin structures

Номер патента: US11963345B2. Автор: Min-Chung Cheng. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-16.

Semiconductor devices including a support pattern on a lower electrode structure

Номер патента: US20240120196A1. Автор: Hyun-Suk Lee,Gihee CHO,Jungoo Kang,Sanghyuck Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-11.

Display Device Having a Plurality of Pixels that can be Operated Separately from One Another

Номер патента: US20180166499A1. Автор: Dominik Scholz,Alexander F. Pfeuffer. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2018-06-14.

Semiconductor structure having a passivated iii-nitride layer and method for manufacturing thereof

Номер патента: EP3140868A1. Автор: Xu Chen,Rongming Chu. Владелец: HRL LABORATORIES LLC. Дата публикации: 2017-03-15.

Semiconductor structure having fin structures

Номер патента: US20230232610A1. Автор: Min-Chung Cheng. Владелец: Nanya Technology Corp. Дата публикации: 2023-07-20.

Three-dimensional semiconductor device including a word line structure having a protruding portion

Номер патента: US20220231140A1. Автор: Nam Kyeong Kim,Yeong Jo MUN. Владелец: SK hynix Inc. Дата публикации: 2022-07-21.

Anisotropic stress generation by stress-generating liners having a sublithographic width

Номер патента: EP2235744A1. Автор: Elbert E. Huang,Lawrence A. Clevenger,Sampath Purushothaman,Bruce B. Doris,Carl J. Radens. Владелец: International Business Machines Corp. Дата публикации: 2010-10-06.

Integrated circuit structures having germanium-based channels

Номер патента: US20200006492A1. Автор: Tahir Ghani,Jack T. Kavalieros,Anand Murthy,Siddharth Chouksey,Seung Hoon Sung,Ashish Agrawal,Harold Kennel,Glenn Glass. Владелец: Intel Corp. Дата публикации: 2020-01-02.

Three-dimensional flash memory device including channel structures having enlarged portions

Номер патента: US20200402995A1. Автор: Jisung Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-24.

Method of producing a semiconductor device having a ferroelectric gate stack

Номер патента: US20230411460A1. Автор: Hans-Joachim Schulze,Thomas Aichinger,Saurabh Roy. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-12-21.

Semiconductor package structure having an annular frame with truncated corners

Номер патента: US20220020726A1. Автор: Tzu-Hung Lin,Chia-Cheng Chang,I-Hsuan Peng,Yi-Jou Lin. Владелец: MediaTek Inc. Дата публикации: 2022-01-20.

Field effect transistor structure having notched mesa

Номер патента: WO2016182825A1. Автор: Kiuchul Hwang. Владелец: Raytheon Company. Дата публикации: 2016-11-17.

Field effect transistor structure having notched mesa

Номер патента: EP3295487A1. Автор: Kiuchul Hwang. Владелец: Raytheon Co. Дата публикации: 2018-03-21.

Semiconductor structures having wells with protruding sections for pickup cells

Номер патента: US20220367441A1. Автор: Yung Feng Chang,Bao-Ru Young,Chun-Chia Hsu,Tung-Heng Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

Semiconductor structures having wells with protruding sections for pickup cells

Номер патента: US20230378158A1. Автор: Yung Feng Chang,Bao-Ru Young,Chun-Chia Hsu,Tung-Heng Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Amorphous bottom electrode structure for MIM capacitors

Номер патента: US12021113B2. Автор: Cheng-Yuan Tsai,Hsing-Lien Lin,Jui-Lin Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Bipolar transistor structure having split collector region and method of making the same

Номер патента: US20150108542A1. Автор: Kun-Ming Huang,Fu-Hsiung Yang,Long-Shih LIN,Po-Tao Chu,Chih-Heng Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-23.

Radiation-emitting component having a converter layer and method for producing a radiation-emitting component having a converter layer

Номер патента: US20230080796A1. Автор: Markus Burger,Britta Goeoetz. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2023-03-16.

SEMICONDUCTOR STRUCTURE HAVING A Si SUBSTRATE HETEROINTEGRATED WITH GaN AND METHOD FOR FABRICATING THE SAME

Номер патента: US20210118670A1. Автор: Edward Yi Chang,Chieh-Hsi Chuang,Jessie Lin. Владелец: National Yang Ming Chiao Tung University NYCU. Дата публикации: 2021-04-22.

Three-dimensional semiconductor device including a through-via structure having a via liner having protruding portions

Номер патента: US20220344267A1. Автор: Kwangsoo Kim,JoongShik SHIN,Junhyoung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-27.

Integrated circuit structures having lookup table decoders for fpgas

Номер патента: US20240222276A1. Автор: Tahir Ghani,Anand S. Murthy,Pushkar Ranade,Sagar SUTHRAM,Wilfred Gomes,Abhishek Anil Sharma. Владелец: Intel Corp. Дата публикации: 2024-07-04.

Display substrate having bonding area for bonding with circuit structure, display apparatus, and circuit structure having bonding area for bonding with display substrate

Номер патента: US20210358959A1. Автор: JIANJUN WU,Zewen Li,Yichen Jiang,Jiangsheng Wang,Biyu Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-11-18.

Light-transmitting electrode structure and smart wearable device

Номер патента: US20240206791A1. Автор: Jianjun Wang. Владелец: Goertek Inc. Дата публикации: 2024-06-27.

An electrode structure, a back-contact solar cell, a cell assembly, and a photovoltaic system

Номер патента: WO2024125855A1. Автор: Gang Chen,Yongqian Wang,Xinqiang Yang. Владелец: Solarlab Aiko Europe Gmbh. Дата публикации: 2024-06-20.

Electrode structure, solar cell, and photovoltaic module

Номер патента: EP4300594A2. Автор: Jing Zhou,Qiang Xu,Yankai QIU. Владелец: Jinko Solar Co Ltd. Дата публикации: 2024-01-03.

Electrode Structure, Solar Cell, and Photovoltaic Module

Номер патента: AU2024200079A1. Автор: Jing Zhou,Qiang Xu,Yankai QIU. Владелец: Jinko Solar Co Ltd. Дата публикации: 2024-01-25.

Electrode structure, solar cell, and photovoltaic module

Номер патента: EP4300594A3. Автор: Jing Zhou,Qiang Xu,Yankai QIU. Владелец: Jinko Solar Co Ltd. Дата публикации: 2024-04-10.

Electrode structure, solar cell, and photovoltaic module

Номер патента: NL2033414B1. Автор: Xu Qiang,Zhou Jing,Qiu Yankai. Владелец: Jinko Solar Co Ltd. Дата публикации: 2023-12-21.

Electrode structure, solar cell, and photovoltaic module

Номер патента: US20240250190A1. Автор: Jing Zhou,Qiang Xu,Yankai QIU. Владелец: Jinko Solar Co Ltd. Дата публикации: 2024-07-25.

Solar battery metal electrode structure and battery assembly

Номер патента: EP4195295A1. Автор: Yanfeng Cui. Владелец: Risen Energy Co Ltd. Дата публикации: 2023-06-14.

Method for producing a gate electrode structure

Номер патента: US20120083081A1. Автор: Anton Mauder,Hans Weber,Kurt Sorschag,Roman Knoefler,Stefan Gamerith. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2012-04-05.

Semiconductor device comprising planar gate and trench field electrode structure

Номер патента: US09917159B2. Автор: Franz Hirler,Ralf Siemieniec,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-03-13.

Light emitting device, electrode structure, light emitting device package, and lighting system

Номер патента: US09882092B2. Автор: Hwan Hee Jeong,Sang Youl Lee,June O Song,Kwang Ki CHOI. Владелец: LG Innotek Co Ltd. Дата публикации: 2018-01-30.

Electrode structure of solid type secondary battery

Номер патента: US09865908B2. Автор: Akira Nakazawa,Kiyoyasu Hiwada,Takuo Kudoh. Владелец: Guala Technology Co Ltd. Дата публикации: 2018-01-09.

Electrode structure and method for producing electrode

Номер патента: US09754702B2. Автор: Kyoung Hoon CHAI,Jong Woon Moon,Joon Rak Choi,Young Sun You. Владелец: LG Innotek Co Ltd. Дата публикации: 2017-09-05.

Semiconductor device with field electrode structure

Номер патента: US09722036B2. Автор: Franz Hirler,Ralf Siemieniec,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-08-01.

Method for producing a double layer capacitor

Номер патента: EP1016107B1. Автор: Anthony Michael Vassallo,Sarkis Minas Keshishian. Владелец: Cap Xx Ltd. Дата публикации: 2011-03-30.

High-frequency coaxial cable having a double layer inner conductor

Номер патента: US2540164A. Автор: Dean John Norman,Smith Esmond Wassell. Владелец: Telegraph Construction and Maintenance Co Ltd. Дата публикации: 1951-02-06.

Electrode for a double layer capacitor and use thereof in an electrical double layer capacitor

Номер патента: DE69918597D1. Автор: Ikeda Katsuji,Takeshi Kawasato,Suhara Manabu. Владелец: Asahi Glass Co Ltd. Дата публикации: 2004-08-19.

Self-supporting capacitor casing having a pair of terminal plates sandwiching an insulative body for aligning terminal positions

Номер патента: US4394713A. Автор: Kazunori Yoshida. Владелец: Nippon Electric Co Ltd. Дата публикации: 1983-07-19.

Method of preparing a double layered nickel hydroxide active material

Номер патента: KR100241594B1. Автор: 김진경,신동엽,은영찬. Владелец: 삼성전관주식회사. Дата публикации: 2000-02-01.

A communication device for reducing the coupling current of a double layer metal

Номер патента: TWI433523B. Автор: I Ping Yen,Chieh Ping Chiu,Feng Jen Weng,Hsiao Wei Wu. Владелец: Quanta Comp Inc. Дата публикации: 2014-04-01.

Process for the production of a double-layer measuring electrode for an electrochemical cell

Номер патента: DE2936142C2. Автор: Harald Dr.phil.nat. 6241 Glashütten Böhm,Bernd Dr.rer.nat. 6053 Obertshausen Rothmann,Ingeborg 6251 Münster Schmelzer. Владелец: Licentia Patent Verwaltungs GmbH. Дата публикации: 1984-04-12.

A double-layer space frame

Номер патента: EP2357290A3. Автор: Glenn Reynolds,Gary Curtis,Dean Hackbarth. Владелец: GOSSAMER SPACE FRAMES. Дата публикации: 2012-04-04.

Method for charging and discharging a double layer electrical capacitor

Номер патента: WO2003081618A3. Автор: Igor Nikolaevich Varakin,Sergey Nikolaevich Razumov,Vladimir Vasilevich Menuhov,Aleksey Borisovich Stepanov,Arkadiy Dmitrievich Klementov. Владелец: Arkadiy Dmitrievich Klementov. Дата публикации: 2004-04-08.

Multilayer material having a resistance layer formed on an electrically conductive layer and a multilayer board for a printed circuit board which has a resistance layer

Номер патента: US5061550A. Автор: Takeshi Yamagishi,Masahiro Mikamo,Kazunao Shimizu. Владелец: Nippon Denkai Co Ltd. Дата публикации: 1991-10-29.

A composite membrane/electrode structure having islands of catalytically active particles

Номер патента: AU8219887A. Автор: James W. McMichael,Robert D. Door. Владелец: Dow Chemical Co. Дата публикации: 1988-07-07.

Electrode structure having alternating composite layers

Номер патента: US09806337B2. Автор: Kenzo Oshihara,Xiaoguang Hao. Владелец: Nissan North America Inc. Дата публикации: 2017-10-31.

Porous fuel cell electrode structures having conformal electrically conductive layers thereon

Номер патента: CA2472232A1. Автор: Chung M. Chan. Владелец: Individual. Дата публикации: 2003-07-17.

Anode electrode structure, lithium-ion battery, method of making an anode electrode structure, method of making a lithium-ion battery, and substrate processing system for producing an anode electrode structure

Номер патента: WO2022039964A8. Автор: Roland Trassl. Владелец: Applied Materials, Inc.. Дата публикации: 2022-09-01.

Anode electrode structure, lithium-ion battery, method of making an anode electrode structure, method of making a lith him -i on battery, and substrate processing system for producing an anode electrode structure

Номер патента: WO2022039964A1. Автор: Roland Trassl. Владелец: Applied Materials, Inc.. Дата публикации: 2022-02-24.

Batteries and related structures having fractal or self-complementary structures

Номер патента: US09647271B2. Автор: Nathan COHEN. Владелец: Fractal Antenna Systems Inc. Дата публикации: 2017-05-09.

Dual layer gradient electrode structure for optimized power and energy density in batteries

Номер патента: US20240234696A9. Автор: Arjun Mendiratta,Kevin Rhodes. Владелец: Lyten Inc. Дата публикации: 2024-07-11.

Graphite composite structure, method of fabricating the same and composite electrode structure of the same

Номер патента: US20180069240A1. Автор: Ming-Sheng Leu,Ding-Shiang Wang. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2018-03-08.

Electrode structure for solid state electrochemical devices

Номер патента: US5670270A. Автор: Sten A. Wallin. Владелец: Dow Chemical Co. Дата публикации: 1997-09-23.

Gradient based electrode structure for all solid-state lithium-ion batteries

Номер патента: US20230187622A1. Автор: Zhijun Gu,Rajesh Bashyam. Владелец: Hyzon Motors Usa Inc. Дата публикации: 2023-06-15.

Electrode structure, method for producing electrode structure, electrolysis cell, and electrolysis tank

Номер патента: EP4273302A3. Автор: Akiyasu Funakawa,Naoyuki Kai,Yoshifumi Kado,Sohei IIYAMA. Владелец: Asahi Chemical Industry Co Ltd. Дата публикации: 2024-09-04.

Electrode structure for a battery and method of manufacturing the same

Номер патента: US20230238541A1. Автор: Anil K. Sachdev,Thomas E. Moylan. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS LLC. Дата публикации: 2023-07-27.

Mouse pad structure having wireless charging coil and manufacturing procedure thereof

Номер патента: US20200225774A1. Автор: Hung-Jen Chou. Владелец: Hades Gaming Corp. Дата публикации: 2020-07-16.

Mouse pad structure having wireless charging coil and manufacturing procedure thereof

Номер патента: US11061495B2. Автор: Hung-Jen Chou. Владелец: Hades Gaming Corp. Дата публикации: 2021-07-13.

Antenna using complex structure having periodic, vertical spacing between dielectric and magnetic substances

Номер патента: US20110193760A1. Автор: Byung Hoon Ryou,Won Mo Sung,Jeong Keun Ji. Владелец: Individual. Дата публикации: 2011-08-11.

Discharge lamp with self-supporting electrode structures

Номер патента: US20110291555A1. Автор: Jeffry W. Losco,Dennis J. Losco,Joseph W. Losco,Dennis A. Losco. Владелец: Superior Quartz Products Inc. Дата публикации: 2011-12-01.

Current collector, electrode structure, nonaqueous electrolyte battery and electrical storage device, and method for producing current collector

Номер патента: US20150118553A1. Автор: Osamu Kato,Mitsuyuki Wasamoto,Sohei Saito,Yukiou HONKAWA,Tsugio Kataoka,Satoshi Yamabe. Владелец: UACJ Foil Corp. Дата публикации: 2015-04-30.

Current collector, electrode structure, nonaqueous electrolyte battery and electrical storage device, and method for producing current collector

Номер патента: US09786919B2. Автор: Osamu Kato,Mitsuyuki Wasamoto,Sohei Saito,Yukiou HONKAWA,Tsugio Kataoka,Satoshi Yamabe. Владелец: UACJ Foil Corp. Дата публикации: 2017-10-10.

Composition and method for forming conductive pattern, and resin structure having conductive pattern thereon

Номер патента: US09668342B2. Автор: Shin Hee Jun,Jae Hyun Kim,Cheol-Hee Park,Chee-Sung PARK,Sang Yun Jung. Владелец: LG Chem Ltd. Дата публикации: 2017-05-30.

Structure having a characteristic of conducting or absorbing electromagnetic waves

Номер патента: US20080011511A1. Автор: Takuya Niino. Владелец: Nitto Denko Corp. Дата публикации: 2008-01-17.

Cavity resonator structure having improved cavity arrangement

Номер патента: WO1998042040A1. Автор: Guanghua Huang,Lasse Beli Ravaska,Kimmo Antero Kyllonen,Lenny Russell Hill. Владелец: Adc Solitra, Inc.. Дата публикации: 1998-09-24.

Microstructured electrode structures

Номер патента: US09806331B2. Автор: Robert M. Spotnitz,Ashok Lahiri,Michael J. Armstrong,Murali Ramasubramanian,Harrold J. Rust, III,James D. Wilcox,Laurie J. LAUCHLAN,Brian E. Brusca,Nirav S. Shah,Christopher G. Castledine. Владелец: Enovix Corp. Дата публикации: 2017-10-31.

Protected electrode structures and methods

Номер патента: US09728768B2. Автор: Yuriy V. Mikhaylik,Michael G. Laramie,John Joseph Christopher Kopera. Владелец: Sion Power Corp. Дата публикации: 2017-08-08.

Microstructured electrode structures

Номер патента: US09362553B2. Автор: Robert M. Spotnitz,Ashok Lahiri,Michael J. Armstrong,Murali Ramasubramanian,Harrold J. Rust, III,James D. Wilcox,Laurie J. LAUCHLAN,Brian E. Brusca,Nirav S. Shah,Christopher G. Castledine. Владелец: Enovix Corp. Дата публикации: 2016-06-07.

Electrode structure for solid polymer fuel cell, its production method, and solid polymer fuel cell

Номер патента: CA2450346C. Автор: Nagayuki Kanaoka,Hiroshi Sohma,Yoichi Asano,Naoki Mitsuta,Masaaki Nanaumi. Владелец: Honda Motor Co Ltd. Дата публикации: 2011-02-08.

Photoconductive pickup tube with unitized electrode structure having the photoconductive target electrode spaced from the tube faceplate

Номер патента: US3619685A. Автор: John J Miller,Carl W Penird. Владелец: Individual. Дата публикации: 1971-11-09.

Electrode structure and method of making an electrode structure

Номер патента: AU2021397861A1. Автор: Qiaochu TANG,Alex Madsen. Владелец: Dyson Technology Ltd. Дата публикации: 2023-07-13.

Electrode structure and method of making an electrode structure

Номер патента: EP4260383A1. Автор: Qiaochu TANG,Alex Madsen. Владелец: Dyson Technology Ltd. Дата публикации: 2023-10-18.

Electrode structure and method of making an electrode structure

Номер патента: US20240055578A1. Автор: Qiaochu TANG,Alex Madsen. Владелец: Dyson Technology Ltd. Дата публикации: 2024-02-15.

A method of fabricating an electrode structure

Номер патента: EP3706624A1. Автор: David Garrett,Nicholas APOLLO. Владелец: University of Melbourne. Дата публикации: 2020-09-16.

Energy storage capacitor having composite electrode structure

Номер патента: US20170323730A1. Автор: Young Joo OH,Jung Rag Yoon,Byung Gwan LEE. Владелец: Samhwa Capacitor Co Ltd. Дата публикации: 2017-11-09.

Mobile telephone having a folding antenna

Номер патента: WO2000019625B1. Автор: Nils R C Rydbeck. Владелец: Ericsson Inc. Дата публикации: 2000-08-10.

Capacitor having electrode structure of high voltage resistance for electric vehicles

Номер патента: US20240355542A1. Автор: Young Joo OH,Jung Rag Yoon. Владелец: Samhwa Capacitor Co Ltd. Дата публикации: 2024-10-24.

Composition for forming conductive pattern, method for forming conductive pattern using same, and resin structure having conductive pattern

Номер патента: US09872386B2. Автор: Shin Hee Jun,Jae Hyun Kim,Ha Na Lee,Cheol-Hee Park,Chee-Sung PARK,Han Nah Jeong,Eun Kyu Seong,Su Jeong Lee. Владелец: LG Chem Ltd. Дата публикации: 2018-01-16.

Structure having nanoantenna and method for manufacturing same

Номер патента: US09801998B2. Автор: Young Keun Kim,Jung Rae Park,Sung Hoi Choi. Владелец: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION. Дата публикации: 2017-10-31.

Composition for forming conductive pattern and resin structure having conductive pattern thereon

Номер патента: US09756725B2. Автор: Shin Hee Jun,Jae Hyun Kim,Cheol-Hee Park,Chee-Sung PARK,Han Nah Jeong,Sang Yun Jung. Владелец: LG Chem Ltd. Дата публикации: 2017-09-05.

Current collector, electrode structure, nonaqueous electrolyte battery and electrical storage device, and method for producing current collector

Номер патента: US09508994B2. Автор: Osamu Kato,Mitsuyuki Wasamoto,Sohei Saito,Yukiou HONKAWA,Tsugio Kataoka,Satoshi Yamabe. Владелец: UACJ Foil Corp. Дата публикации: 2016-11-29.

Electrode structure and method for producing

Номер патента: US20170113034A1. Автор: Matthias Frericks,Lydia BUCKOW. Владелец: Heraeus Deutschland GmbH and Co KG. Дата публикации: 2017-04-27.

Power converter circuit having a pair of inversely coupled inductors

Номер патента: US20030071601A1. Автор: Chin Chang,Jingquan Chen. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-04-17.

Multilayer structure having at least one metal layer and at least one polyamide layer

Номер патента: US09950499B2. Автор: Georg Stoppelmann,Gabriel Garcia. Владелец: EMS PATENT AG. Дата публикации: 2018-04-24.

Method for producing an electrode structure

Номер патента: US09789305B2. Автор: Matthias Frericks,Lydia BUCKOW. Владелец: Heraeus Deutschland GmbH and Co KG. Дата публикации: 2017-10-17.

Vapor cell structure having cavities connected by channels for micro-fabricated atomic clocks, magnetometers, and other devices

Номер патента: US09568565B2. Автор: Peter J. Hopper,Roozbeh Parsa. Владелец: Texas Instruments Inc. Дата публикации: 2017-02-14.

Anode structure having silicon elements

Номер патента: US09537147B2. Автор: Andy Keates. Владелец: Intel Corp. Дата публикации: 2017-01-03.

Batteries and related structures having fractal or self-complementary structures

Номер патента: US20170288233A1. Автор: Nathan COHEN. Владелец: Fractal Antenna Systems Inc. Дата публикации: 2017-10-05.

Batteries and Related Structures Having Fractal or Self-Complementary Structures

Номер патента: US20150311535A1. Автор: Nathan COHEN. Владелец: Nathan COHEN. Дата публикации: 2015-10-29.

Batteries and related structures having fractal or self-complementary structures

Номер патента: US10566629B2. Автор: Nathan COHEN. Владелец: Fractal Antenna Systems Inc. Дата публикации: 2020-02-18.

Batteries and related structures having fractal or self-complementary structures

Номер патента: US20180114989A1. Автор: Nathan COHEN. Владелец: Individual. Дата публикации: 2018-04-26.

Shadow mask structure having no wrinkle of shadow mask and cathode-ray tube excellent in screen luminance and color-purity

Номер патента: US20010011863A1. Автор: Hiroshi Hasegawa. Владелец: NEC Corp. Дата публикации: 2001-08-09.

Electron emitter device with integrated multi-pole electrode structure

Номер патента: US20150076988A1. Автор: Mehran Nasser-Ghodsi,Thomas Plettner. Владелец: KLA Tencor Corp. Дата публикации: 2015-03-19.

Method and apparatus for particle detection using a sensor structure having a moveable portion

Номер патента: WO2001093304A1. Автор: Susan B. Felch,Ziwei Fang,Steven R. Walther,Juanita S. Sonico. Владелец: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.. Дата публикации: 2001-12-06.

Method and apparatus for particle detection using a sensor structure having a moveable portion

Номер патента: EP1285455A1. Автор: Susan B. Felch,Ziwei Fang,Steven R. Walther,Juanita S. Sonico. Владелец: Varian Semiconductor Equipment Associates Inc. Дата публикации: 2003-02-26.

Radio frequency filter of combline structure having frequency cut-off circuit and method for implementing the same

Номер патента: US20020171514A1. Автор: Seong-soo Lee,Mi-Hyun Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-11-21.

Antenna-inserted electrode structure and image display device including the same

Номер патента: US12099670B2. Автор: Jae Hyun Lee,Byung Jin Choi,Dong Pil PARK. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2024-09-24.

Electrode structure having rolled graphene film

Номер патента: US09978534B2. Автор: Jae-Young Choi,Hyo-young Lee,Soon-geun KWON,Yeo-heung YOON. Владелец: Corning Precision Materials Co Ltd. Дата публикации: 2018-05-22.

Vehicle having a rigid frame structure for receiving a replaceable battery pack

Номер патента: US09937818B2. Автор: Austin L. Newman. Владелец: NIO USA Inc. Дата публикации: 2018-04-10.

Connecting structure having a regulating portion to control deformation of an elastic portion of a terminal in an electrical connector

Номер патента: US09917403B2. Автор: Kentaro DOI. Владелец: Hirose Electric Co Ltd. Дата публикации: 2018-03-13.

Electron emitter device with integrated multi-pole electrode structure

Номер патента: US09793089B2. Автор: Mehran Nasser-Ghodsi,Thomas Plettner. Владелец: KLA Tencor Corp. Дата публикации: 2017-10-17.

Electrolyte layer having a patchwork-type nanoporous grain boundary and a method of preparation thereof

Номер патента: US09673470B2. Автор: Md Hasan Zahir,Haitham M Bahaidarah. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2017-06-06.

Composition and method for forming conductive pattern, and resin structure having conductive pattern thereon

Номер патента: US09659682B2. Автор: Shin Hee Jun,Jae Hyun Kim,Cheol-Hee Park,Chee-Sung PARK,Jae Jin Kim,Han Nah Jeong,Eun Kyu Seong,Su Jeong Lee,Sang Yun Jung. Владелец: LG Chem Ltd. Дата публикации: 2017-05-23.

Switch structure having display and playback device

Номер патента: US20100163387A1. Автор: Gear Chu. Владелец: Individual. Дата публикации: 2010-07-01.

Multiple row electrical connector assembly having a terminal-less connection system

Номер патента: US12126109B2. Автор: Hyoun Lee,Samson Pasicaran,Jomary Ledesma. Владелец: Lear Corp. Дата публикации: 2024-10-22.

Antenna structures having resonating elements and parasitic elements within slots in conductive elements

Номер патента: US09531071B2. Автор: Hao Xu,Robert W. Schlub,Mattia Pascolini,Ruben Caballero,Douglas Blake Kough,Eduardo Lopez Camacho,Jerzy S. Guterman. Владелец: Apple Inc. Дата публикации: 2016-12-27.

Antenna-inserted electrode structure and image display device including the same

Номер патента: US11955689B2. Автор: Yoon Ho Huh,Byoung In KIM,Chang Jun MAENG. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2024-04-09.

Grid electrode structure for a cathode ray tube

Номер патента: US5726527A. Автор: Gerhard Gassler,Gerhard Horsch. Владелец: AEG Elektronische Roehren GmbH. Дата публикации: 1998-03-10.

Optical reflective diffraction device having a high resistance to laser flux

Номер патента: US09671534B2. Автор: Eric Lavastre,Nicolas Bonod,Jerome Neauport,Laurent Gallais. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2017-06-06.

Lithium-ion cell having a high-capacity anode and a high-capacity cathode

Номер патента: US09437370B2. Автор: Aruna Zhamu,Bor Z. Jang,Qing Fang,Guorong Chen,Yanbo Wang,Xiging Wang. Владелец: Nanotek Instruments Inc. Дата публикации: 2016-09-06.

Electrode structure and secondary battery

Номер патента: EP3923374A1. Автор: Nobuhiro Inoue. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2021-12-15.

Resistor and design structure having resistor material length with sub-lithographic width

Номер патента: US20090231085A1. Автор: James S. Nakos,Stephen E. Luce,Mark C. Hakey. Владелец: International Business Machines Corp. Дата публикации: 2009-09-17.

Method of making bipolar carbon-plastic electrode structure-containing multicell electrochemical device

Номер патента: US4164068A. Автор: Joseph A. Shropshire,Hsue C. Tsien. Владелец: Exxon Research and Engineering Co. Дата публикации: 1979-08-14.

Electrochemical cell having wound electrode structures

Номер патента: US4539274A. Автор: Franz Goebel. Владелец: GTE Government Systems Corp. Дата публикации: 1985-09-03.

Gradient based electrode structure for all solid-state lithium-ion batteries

Номер патента: WO2023114012A1. Автор: Zhijun Gu,Rajesh Bashyam. Владелец: Hyzon Motors Inc. A Corporation In The State Of Delaware. Дата публикации: 2023-06-22.

Electrode structure, method for producing electrode structure, electrolysis cell, and electrolysis tank

Номер патента: EP4273302A2. Автор: Akiyasu Funakawa,Naoyuki Kai,Yoshifumi Kado,Sohei IIYAMA. Владелец: Asahi Chemical Industry Co Ltd. Дата публикации: 2023-11-08.

Electrode structure, secondary battery including the same, and method of fabricating the electrode structure

Номер патента: EP4057385A2. Автор: Hwiyeol PARK,Huisu Jeong,Kyounghwan Kim,Joungwon Park,Jeongkuk Shon,Jinsuck HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-14.

Method for manufacturing electrode structure for positive electrode, electrode structure manufactured thereby, and secondary battery comprising same

Номер патента: US20240014372A1. Автор: Jung Ho Lee,Sambhaji Shivaji Shinde,Dong Hyung Kim,Sung Hae Kim. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-01-11.

Electrode structure, secondary battery including the same, and method of fabricating the electrode structure

Номер патента: US20220293963A1. Автор: Hwiyeol PARK,Huisu Jeong,Kyounghwan Kim,Joungwon Park,Jeongkuk Shon,Jinsuck HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-15.

Dual layer gradient electrode structure for optimized power and energy density in batteries

Номер патента: WO2024091355A1. Автор: Arjun Mendiratta,Kevin Rhodes. Владелец: Lyten, Inc.. Дата публикации: 2024-05-02.

Dual layer gradient electrode structure for optimized power and energy density in batteries

Номер патента: US20240136508A1. Автор: Arjun Mendiratta,Kevin Rhodes. Владелец: Lyten Inc. Дата публикации: 2024-04-25.

Electrode structure, secondary battery including the same, and method of fabricating the electrode structure

Номер патента: EP4057385A3. Автор: Hwiyeol PARK,Huisu Jeong,Kyounghwan Kim,Joungwon Park,Jeongkuk Shon,Jinsuck HEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-12.

Electrode structure and its manufacturing method and battery structure including the same

Номер патента: US20240170681A1. Автор: Kuan-Zong Fung,Shu-Yi Tsai. Владелец: National Cheng Kung University NCKU. Дата публикации: 2024-05-23.

Flow battery stack or single cell, membrane-electrode assembly and composite electrode structure thereof

Номер патента: AU2023232217A1. Автор: Zhijie HAN,Zhiqi MA. Владелец: Shanghai Longvault Energy Technology Co Ltd. Дата публикации: 2024-09-19.

Electrode structure including polymer electrolyte, manufacturing method of the electrode structure, and lithium metal battery including the electrode structure

Номер патента: US20240322221A1. Автор: Jongseok Moon,Dongwon Kim,Jinhwan Park,Kanghee Lee,Jongseok Park,Woojin Bae,Heemin KIM,Jaekyung Choi,Hyunsik WOO,Ahyeon Ban,Jinah Roh. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-09-26.

Electrode structure and manufacturing method thereof

Номер патента: US20220190318A1. Автор: TAE JOO Park,DAE WOONG Kim,Kyu Moon Kwon. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2022-06-16.

Electrode structure for a battery and method of manufacturing the same

Номер патента: US11769884B2. Автор: Anil K. Sachdev,Thomas E. Moylan. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS LLC. Дата публикации: 2023-09-26.

Structural body and electrode structure

Номер патента: US20150084508A1. Автор: Yoshimasa Kondo,Kunihiko Yoshioka. Владелец: NGK Insulators Ltd. Дата публикации: 2015-03-26.

Electrode structure and energy storage apparatus including the same

Номер патента: US20140168854A1. Автор: Jae Hoon Choi,Se Woong Paeng,Yeong Su Cho,Eun Sil Kim,Bae Kyun Kim. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2014-06-19.

Electrode structure and all-solid secondary battery including the same

Номер патента: US20220359960A1. Автор: Jaegu Yoon,Minsuk Lee,Hongjeong Kim,Younggyoon RYU. Владелец: Samsung SDI Co Ltd. Дата публикации: 2022-11-10.

Film and hidden switch structure having the same

Номер патента: US20200130330A1. Автор: Ki Ho Kim. Владелец: Seoyon America Corp. Дата публикации: 2020-04-30.

Method of manufacturing color-separating electrode structure for color cathode ray tube

Номер патента: US20040185744A1. Автор: Masahiro Nakazawa,Shinichi Ooe,Takeshi Tsukasaki,Yoshio Mizumoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2004-09-23.

Method for manufacturing color selection electrode structure and color cathode ray tube having the color selection electrode structure

Номер патента: US20020195921A1. Автор: Go Minami,Shiro Kashihara,Shigenari Ohshima. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-12-26.

Method for manufacturing color selection electrode structure and color cathode ray tube having the color selection electrode structure

Номер патента: MY129638A. Автор: Go Minami,Shiro Kashihara,Shigenari Ohshima. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2007-04-30.

Electrode structure of bio-signal measurement and electrode system

Номер патента: US20210100510A1. Автор: Juha MYLLYKANGAS. Владелец: Bittum Biosignals Oy. Дата публикации: 2021-04-08.

Electrode structure with electric-shock prevention function

Номер патента: US09960519B2. Автор: Ho-Seok Lee. Владелец: Vision Tech Inc. Дата публикации: 2018-05-01.

Battery having electrode structure including metal fiber and preparation method of electrode structure

Номер патента: US09929409B2. Автор: Chul hwan Kim,Chang Hyeon Kim,Lee Hyun Shin. Владелец: Jenax Inc. Дата публикации: 2018-03-27.

Lithium metal composite oxide particles, process of producing lithium metal composite oxide particles, electrode structure containing lithium metal composite oxide particles, process of producing electrode structure, and lithium secondary battery having electrode structure

Номер патента: US7927743B2. Автор: Katsuhiko Inoue,Soichiro Kawakami. Владелец: Canon Inc. Дата публикации: 2011-04-19.

Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same

Номер патента: US4932033A. Автор: Seiichi Miyazawa,Mitsuru Ohtsuka. Владелец: Canon Inc. Дата публикации: 1990-06-05.

Electrical feedthrough assemblies for containment structures having specially controlled environments and method of making

Номер патента: GB1430186A. Автор: . Владелец: Bunker Ramo Corp. Дата публикации: 1976-03-31.

Brushless rotary plasma electrode structure and film coating system

Номер патента: US20160208403A1. Автор: Chia-Hao Chang,Shih-Chin Lin,Kuang-Yu LIN. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2016-07-21.

Electrode structure and method of making an electrode structure

Номер патента: US20240006592A1. Автор: Alex Madsen,Daniel James MORDAK. Владелец: Dyson Technology Ltd. Дата публикации: 2024-01-04.

Devices having a cavity structure and related methods

Номер патента: US20100255187A1. Автор: Hsiang Hsiang Ko,Hung Jui Chang,You-Hua Chou,Yi Ming Chen,Hsien-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2010-10-07.

Electrode slurry for fuel cell for forming a multilayer structure without an interface, a multilayer electrode structure using same, and a manufacturing method thereof

Номер патента: US20240120501A1. Автор: Kook Il Han,Yoon Hwan Cho,Geon Hee Cho,Ji Hoon Yang. Владелец: Kia Corp. Дата публикации: 2024-04-11.

Ion beam etching machine and lower electrode structure thereof

Номер патента: EP4404236A1. Автор: XIANG Yu,Xiaoli Shi,Yaoyao ZHANG,Dongdong HU,Shiran CHENG,Kaidong Xu,Huaidong ZHANG,Chaoquan YANG. Владелец: Jiangsu Leuven Instruments Co Ltd. Дата публикации: 2024-07-24.

Electrode structure, steering wheel, and method for manufacturing steering wheel

Номер патента: US12065188B2. Автор: Yasuhiro Yamashita,Takumi Yamada,Takateru Sawada. Владелец: Panasonic Automotive Systems Co Ltd. Дата публикации: 2024-08-20.

Protected electrode structures for solid-state cells

Номер патента: EP4413627A1. Автор: Brandon KELLY,Uday KASAVAJJULA,A. Yang,Edward BURCH. Владелец: Solid Power Operating Inc. Дата публикации: 2024-08-14.

Composite negative electrode structure

Номер патента: US20230163347A1. Автор: Chih-Ching Chang,Wei-Chao Chen,Hong-zheng LAI,Tseng-Lung Chang. Владелец: Solidedge Solution Inc. Дата публикации: 2023-05-25.

Method for producing lithium metal negative electrode structure and lithium metal negative electrode structure

Номер патента: US20200161647A1. Автор: Cha Hun Ku,Sangkyun LEE,Minwook Kim,Baeck Boem CHOI. Владелец: LG Chem Ltd. Дата публикации: 2020-05-21.

Rechargeable battery, electrode structure and method of manufacturing the same

Номер патента: US20200185705A1. Автор: Jih-Jen Wu,Huei Lian CHEN. Владелец: National Cheng Kung University NCKU. Дата публикации: 2020-06-11.

Discharge electrode structure of plasma display panel

Номер патента: US20040145315A1. Автор: Chun-Hsu Lin,Kuang-Lang Chen,Wen-Rung Huang,Sheng-Chi Lee. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2004-07-29.

Electrode structure, fabrication method thereof and PDP utilizing the same

Номер патента: US20050224801A1. Автор: Pei-Yu Chen,Chia-Hsin Lin. Владелец: AU OPTRONICS CORP. Дата публикации: 2005-10-13.

Electrode structure, fabrication method thereof and pdp utilizing the same

Номер патента: US20060286723A1. Автор: Pei-Yu Chen,Chia-Hsin Lin. Владелец: AU OPTRONICS CORP. Дата публикации: 2006-12-21.

Electrode structure, fabrication method thereof and PDP utilizing the same

Номер патента: US7126278B2. Автор: Pei-Yu Chen,Chia-Hsin Lin. Владелец: AU OPTRONICS CORP. Дата публикации: 2006-10-24.

Negative electrode active material for secondary battery, conductive composition for secondary battery, negative electrode material comprising same, negative electrode structure and secondary battery comprising same, and method for manufacturing same

Номер патента: US09911976B2. Автор: Soichiro Kawakami,Dong Gyu Chang,Ju Myeung Lee,Hyun Ju Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-06.

Negative electrode active material for secondary battery, conductive composition for secondary battery, negative electrode material comprising same, negative electrode structure and secondary battery comprising same, and method for manufacturing same

Номер патента: US09761869B2. Автор: Soichiro Kawakami,Dong Gyu Chang,Ju Myeung Lee,Hyun Ju Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-12.

Lawn maintenance apparatus having a rotatable, key operated switch

Номер патента: US6018937A. Автор: Norikazu Shimizu,Tsutomu Inui,Joji Maeda,Kenzo Shimada. Владелец: Honda Motor Co Ltd. Дата публикации: 2000-02-01.

Tubular structure having transverse magnetic field with gradient

Номер патента: US5347254A. Автор: Herbert A. Leupold. Владелец: US Department of Army. Дата публикации: 1994-09-13.

Improvements in or relating to electrode structures for electron discharge devices

Номер патента: GB779549A. Автор: Ralph Reginald Pearce. Владелец: Electrical and Musical Industries Ltd. Дата публикации: 1957-07-24.

A method of fabricating an electrode structure

Номер патента: AU2018363886A1. Автор: David Garrett,Nicholas APOLLO. Владелец: University of Melbourne. Дата публикации: 2020-04-30.

Method for preparing porous carbon structure having increased surface area and total pore volume, and porous carbon structure prepared using same

Номер патента: US20240002234A1. Автор: Jun Young Kim,Jung Ho Kim,Kah-Young Song,Nakwon KONG,Jusung LEE,Kyoungsik NAM,Chanmi PARK. Владелец: KOLON INDUSTRIES INC. Дата публикации: 2024-01-04.

Relay having a plurality of sealed contact switches

Номер патента: US3840831A. Автор: R Guichard. Владелец: General Electric Co. Дата публикации: 1974-10-08.

Magnet structure having a plurality of individual magnets integrated into a mesh structure

Номер патента: US11817747B2. Автор: Vasile Mihaila,Romain Ravaud,Loic Mayeur,Huguette Tiegna. Владелец: WHYLOT SAS. Дата публикации: 2023-11-14.

Dual layer gradient cathode electrode structure for reducing sulfide transfer

Номер патента: US11870063B1. Автор: Arjun Mendiratta,Kevin Rhodes. Владелец: Lyten Inc. Дата публикации: 2024-01-09.

Structure having symbols printed thereon and method for implementing the same

Номер патента: US20100012474A1. Автор: Ching Cheng Tsai. Владелец: Chicony Electronics Co Ltd. Дата публикации: 2010-01-21.

Bipolar plate structure having optimized gas flow channels

Номер патента: US20180151892A1. Автор: Sung-En Wang,Jenn-Jiang Hwang,Wei-Hong Weng,Chih-Hong Lin. Владелец: Individual. Дата публикации: 2018-05-31.

Method for preparing porous carbon structure having increased surface area and total pore volume, and porous carbon structure prepared using same

Номер патента: EP4257548A1. Автор: Jun Young Kim,Jung Ho Kim,Kah-Young Song,Nakwon KONG,Jusung LEE,Kyoungsik NAM,Chanmi PARK. Владелец: KOLON INDUSTRIES INC. Дата публикации: 2023-10-11.

Shape correction device for frame body, and method for manufacturing electrolyte film/electrode structure provided with resin frame for fuel cell

Номер патента: US20210151827A1. Автор: HIROSHI Yoshioka,Satoshi Hasegawa,Ken Harada,Sachio Suzuki,Nobuyoshi Muromoto,Kouya Shimada. Владелец: Honda Motor Co Ltd. Дата публикации: 2021-05-20.

Cavity resonator structure having improved cavity arrangement

Номер патента: EP1010208A1. Автор: Guanghua Huang,Lasse Beli Ravaska,Kimmo Antero Kyllonen,Lenny Russell Hill. Владелец: ADC Solitra Inc. Дата публикации: 2000-06-21.

Structure having photonic crystal and surface-emitting laser

Номер патента: EP2023454B1. Автор: Takeshi Uchida,Yasuhiro Nagatomo. Владелец: Canon Inc. Дата публикации: 2010-12-15.

Frame for fuel cell and fuel cell stack structure having the frame

Номер патента: US20180191018A1. Автор: Jong-Woo Choi,Song Ho Choi,Jin Ah Park. Владелец: Mico Co Ltd. Дата публикации: 2018-07-05.

Positive electrode structure for secondary cell

Номер патента: US20210210764A1. Автор: Takeshi Yagi,Kenshin Kitoh,Junki MATSUYA. Владелец: NGK Insulators Ltd. Дата публикации: 2021-07-08.

Electrode structure, manufacturing method therefor, and electrochemical element comprising same

Номер патента: US20210057718A1. Автор: Byung Hee Hong,Sang Min KANG,Quang Trung TRUONG. Владелец: Graphene Square Inc. Дата публикации: 2021-02-25.

Electrode structure, manufacturing method therefor, and electrochemical element comprising same

Номер патента: US11843108B2. Автор: Byung Hee Hong,Sang Min KANG,Quang Trung TRUONG. Владелец: Graphene Square Inc. Дата публикации: 2023-12-12.

Electrode structure for capacitor, electrolytic capacitor, and method of manufacturing the same

Номер патента: US20160189874A1. Автор: Kwi Jong Lee. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2016-06-30.

Self-centered sealing for electrode structure

Номер патента: US4771211A. Автор: Michael G. May. Владелец: AIR ANTI POLLUTION IND RES Ltd. Дата публикации: 1988-09-13.

Electrode structure and all-solid-state secondary battery including the same

Номер патента: US20230307659A1. Автор: Kyusung Park,Jaegu Yoon,Jaejun Lee,Eungyeong Lee,Joowook Lee,Younggyoon RYU. Владелец: Samsung SDI Co Ltd. Дата публикации: 2023-09-28.

Electrode Structure for Stacked Alkaline Fuel Cells

Номер патента: US20070128497A1. Автор: Jiri Nor. Владелец: Individual. Дата публикации: 2007-06-07.

Antenna-inserted electrode structure and image display device including the same

Номер патента: US12040535B2. Автор: Yoon Ho Huh,Chang Jun MAENG,Byuong In KIM. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2024-07-16.

Electrode structure and method of manufacturing the same, and secondary battery including the electrode structure

Номер патента: US11715823B2. Автор: Sungjin Lim,Hwiyeol PARK,Huisu Jeong,Kyounghwan Kim,Junhyeong Lee,Jin S. Heo,Jeongkuk Shon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-01.

Electrode structure adapted for high applied voltage and fabrication method thereof

Номер патента: US20110027615A1. Автор: Shih-Chieh Jang,Chun-Yen Lin,Chih-Ming Hu,Wen-Sheng Lin,Chen HSU. Владелец: Hermes Epitek Corp. Дата публикации: 2011-02-03.

Waveguide line electrode structure and electro-optic modulator

Номер патента: US20240337871A1. Автор: Shiwei Song,Weiqi Sun,Qingyang YU,Yingcong ZHOU,Hanxiao LIANG,Yipin SONG,Haicang WU,Wenhao MAO. Владелец: Suzhou Lycore Technologies Co Ltd. Дата публикации: 2024-10-10.

Electrolyte membrane for lithium secondary battery and membrane-electrode structure for lithium secondary battery having the same

Номер патента: US12107217B2. Автор: ANH Le Mong,Duk Joon Kim,Zhenchuan TIAN,Su Gyeong KIM,Hai Anh Hoang. Владелец: SUNGKYUNKWAN UNIVERSITY. Дата публикации: 2024-10-01.

Electrolyte membrane-electrode structure with resin frame for fuel cells

Номер патента: US09966623B2. Автор: Kenichi Tanaka,Hiroshi Sohma,Naoki Mitsuta,Kazuo Nunokawa,Daisuke Okonogi,Masashi Sugishita,Yukihito Tanaka. Владелец: Honda Motor Co Ltd. Дата публикации: 2018-05-08.

Plasma induced flow electrode structure, plasma induced flow generation device, and method of manufacturing plasma induced flow electrode structure

Номер патента: US09934944B2. Автор: Akio Ui,Yasushi Sanada,Masato Akita. Владелец: Toshiba Corp. Дата публикации: 2018-04-03.

Method for preparation of artificial blood vessel using tube-type porous biodegradable scaffold having a double-layered structure and stem cell, and artificial blood vessel made by the same

Номер патента: US09683216B2. Автор: Jung-Woog SHIN,Dong-hwa Kim. Владелец: Industry Academic Cooperation Foundation of Inje University. Дата публикации: 2017-06-20.

Process for producing a thermoplastic shaped article having a double layered wall

Номер патента: US3819792A. Автор: K Ono,M Fujiwara,N Kawahito,Y Tabe. Владелец: TORAY INDUSTRIES INC. Дата публикации: 1974-06-25.

System and method for on-demand insulation between layers of a double-layered window

Номер патента: CA3237123A1. Автор: Alexander Paul. Владелец: Individual. Дата публикации: 2023-05-11.

System and method for on-demand insulation between layers of a double-layered window

Номер патента: AU2022382567A1. Автор: Alexander Paul. Владелец: Individual. Дата публикации: 2024-05-16.

Method to produce a double-layer knitted fabric

Номер патента: US11959205B2. Автор: Sascha Platz,Etienne Gebel,Verena Voss. Владелец: Essity Hygiene and Health AB. Дата публикации: 2024-04-16.

Method to produce a double-layer knitted fabric

Номер патента: AU2019440462B2. Автор: Sascha Platz,Etienne Gebel,Verena Voss. Владелец: Essity Hygiene and Health AB. Дата публикации: 2024-05-30.

Method to produce a double-layer knitted fabric

Номер патента: EP3953512A1. Автор: Sascha Platz,Etienne Gebel,Verena Voss. Владелец: Essity Hygiene and Health AB. Дата публикации: 2022-02-16.

Attachable bra comprising a double layer of an exterior form and a replaceable interior pad

Номер патента: US20100240279A1. Автор: Shigeki Otsuka. Владелец: Individual. Дата публикации: 2010-09-23.

Multilayer wiring board with enclosed Ur-variant dual conductive layer

Номер патента: US09622344B2. Автор: Tatsuo Inoue,Toshiyuki Kudo,Toshinori OMORI,Takayasu SUGAI. Владелец: Micronics Japan Co Ltd. Дата публикации: 2017-04-11.

Method for production of a double-layer multiphase ironless winding and winding resulting therefrom

Номер патента: NO347240B1. Автор: ZhaoQiang Zhang,Oddvin Agnalt Østmo. Владелец: Alva Ind As. Дата публикации: 2023-07-24.

Device and method for balancing charge between the individual cells of a double-layer capacitor

Номер патента: CN101283495B. Автор: S·博尔茨,R·克诺尔,M·格岑贝尔格. Владелец: Continental Automotive GmbH. Дата публикации: 2013-04-03.

Apparatus and method for compensating for charging of series connected capacitors of a double layer capacitor

Номер патента: JP4072187B2. Автор: クノルライナー,ボルツシュテファン,ゲツェンベルガーマーティン,ルガートギュンター. Владелец: SIEMENS AG. Дата публикации: 2008-04-09.

High frequency sealing strip for electromagnetically screened electronic modules comprises a sleeve forming a double layer clip in the region of an edge of a bearing surface

Номер патента: DE202005004133U1. Автор: . Владелец: MTC Micro Tech Components GmbH. Дата публикации: 2005-06-02.

Device and method for equalising the charge of serially connected capacitors belonging to a double layer capacitor

Номер патента: CN100446380C. Автор: S·博尔茨,R·克诺尔,M·格岑伯格,G·卢格尔特. Владелец: SIEMENS AG. Дата публикации: 2008-12-24.

Device and method for equalising the charge of serially connected capacitors belonging to a double layer capacitor

Номер патента: US20070127274A1. Автор: Stephan Bolz,Rainer Knorr,Martin Götzenberger,Gunter Lugert. Владелец: SIEMENS AG. Дата публикации: 2007-06-07.

Method for production of a double-layer multiphase ironless winding and winding resulting

Номер патента: WO2023121476A1. Автор: ZhaoQiang Zhang,Oddvin Agnalt Østmo. Владелец: Alva Industries As. Дата публикации: 2023-06-29.

Double-layer conductive circuit, manufacturing method thereof and display module

Номер патента: CN114126262A. Автор: 奚邦籽,朱德忠. Владелец: Shenzhen Huadingxing Technology Co ltd. Дата публикации: 2022-03-01.

Display device having one or more opaque conductive layers and blackened layers

Номер патента: US11782565B2. Автор: Yong-Il Kim,Chang-Hyun SONG. Владелец: LG Display Co Ltd. Дата публикации: 2023-10-10.

Display device having a substantially transparent region in a touch pad

Номер патента: US20210141493A1. Автор: Yong-Il Kim,Chang-Hyun SONG. Владелец: LG Display Co Ltd. Дата публикации: 2021-05-13.

Low temperature cure coating formed via polarity-facilitated catalyst migration between layers in a double layer curing mechanism

Номер патента: WO2019020324A1. Автор: Donald H. Campbell,Timothy Clark,Timothy S. December,Kristin Michel,Keqing Fa,Kevin Michael TURLEY,Lisa Jean Harlow,Adam OZWALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2019-01-31.

Low temperature cure coating formed via polarity-facilitated catalyst migration between layers in a double layer curing mechanism

Номер патента: EP3658627A1. Автор: Donald H. Campbell,Timothy Clark,Timothy S. December,Kristin Michel,Keqing Fa,Kevin Michael TURLEY,Lisa Jean Harlow,Adam OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2020-06-03.

Low temperature cure coating formed via polarity-facilitated catalyst migration between layers in a double layer curing mechanism

Номер патента: US20200172758A1. Автор: Donald H. Campbell,Timothy Clark,Timothy S. December,Keqing Fa,Kevin Michael TURLEY,Lisa Jean Harlow,Adam OZVALD,Kristen Michel. Владелец: BASF COATINGS GMBH. Дата публикации: 2020-06-04.

Low temperature cure coating formed via resin-facilitated catalyst migration between layers in a double layer curing mechanism

Номер патента: US20190031910A1. Автор: Donald H. Campbell,Timothy Clark,Timothy S. December,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2019-01-31.

Surface-Acoustic-Wave (SAW) Filter with an Electrical Conductor Having a Floating Potential

Номер патента: US20230261641A1. Автор: Thomas Förster,Stefan Freisleben,Markus Mayer,Stefan Ammann,Vikrant Chauhan,Manuel Sabbagh. Владелец: RF360 Singapore Pte Ltd. Дата публикации: 2023-08-17.

Etching method for manufacturing substrate structure having thick electrically conductive layer, and substrate structure having thick electrically conductive layer

Номер патента: US11895778B2. Автор: Tze-Yang Yeh,Shih-Hsi Tai,Tung-Ho Tao. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2024-02-06.

Etching method for manufacturing substrate structure having thick electrically conductive layer, and substrate structure having thick electrically conductive layer

Номер патента: US20230199969A1. Автор: Tze-Yang Yeh,Shih-Hsi Tai,Tung-Ho Tao. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2023-06-22.

An anti-tip electrode type single electrode structure and electrode cleaning device

Номер патента: EP4369871A2. Автор: Peng Zhang,Qiang Gao,Hang Zhao,Lihua Lu,Yuheng Guan,Jiaxuan CHEN,Yongzhi CAO. Владелец: Harbin Institute of Technology. Дата публикации: 2024-05-15.

An anti-tip electrode type single electrode structure and electrode cleaning device

Номер патента: EP4369871A3. Автор: Peng Zhang,Qiang Gao,Hang Zhao,Lihua Lu,Yuheng Guan,Jiaxuan CHEN,Yongzhi CAO. Владелец: Harbin Institute of Technology. Дата публикации: 2024-06-12.

Memory array structures having multiple sub-blocks, apparatus containing such memory array structures, and operation of such apparatus

Номер патента: EP4397151A1. Автор: Shuji Tanaka,Masanobu Saito,Yoshiaki Fukuzumi,Jun Fujiki. Владелец: Micron Technology Inc. Дата публикации: 2024-07-10.

Component having a micromechanical microphone structure, and method for operating such a microphone component

Номер патента: US8885849B2. Автор: Franz Laermer,Thomas Buck,Jochen Zoellin,Alberto Arias-Drake,Juan Ramos-Martos,Antonio Ragel-Morales,Joaquin Ceballos-Caceres,Jose M. Mora-Gutierrez. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2014-11-11.

Apparatus containing memory array structures having multiple sub-blocks

Номер патента: US12112805B2. Автор: Shuji Tanaka,Masanobu Saito,Yoshiaki Fukuzumi,Jun Fujiki. Владелец: Micron Technology Inc. Дата публикации: 2024-10-08.

Camera module structure having electronic device connections formed therein

Номер патента: US09703173B2. Автор: Qiang Yang,Yoshiyuki Takase,Douglas Stuart Brodie,Takeshi Ichimiya,Shaolong Sui. Владелец: Apple Inc. Дата публикации: 2017-07-11.

Techniques for enabling wireless communications using subframe structures having different subframe durations

Номер патента: US09648500B2. Автор: Tao Luo,Hao Xu,Peter Gaal,Wanshi Chen,Naga Bhushan,Srinivas YERRAMALLI,Tingfang JI,Durga Prasad Malladi,Yongbin Wei,Aleksandar Damnjanovic. Владелец: Qualcomm Inc. Дата публикации: 2017-05-09.

Electrical machine having a plastic layer as a phase separator

Номер патента: US12003150B2. Автор: Klaus Büttner,Matthias Warmuth,Tobias Katzenberger,Bastian Plochmann. Владелец: Innomotics GmbH. Дата публикации: 2024-06-04.

Sensor structure having increased thermal stability

Номер патента: US20160118066A1. Автор: Eric Singleton,Konstantin Nikolaev,Taras Pokhil,Andrzej Stankiewicz,Mohammed Patwari. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2016-04-28.

Two-phase immersion-cooling heat-dissipation structure having shortened evacuation route for vapor bubbles

Номер патента: US20240276676A1. Автор: Chun-Te Wu,Ching-Ming Yang,Tze-Yang Yeh,Yu-Wei Chiu. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2024-08-15.

Method for configuring quality-of-service quantities in a network having a first network segment and multiple second network segments including multiple network subscribers

Номер патента: US20230388396A1. Автор: Michael Ernst Doering. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2023-11-30.

Semiconductor device, method of fabricating semiconductor device, and semiconductor structure having semiconductor device

Номер патента: US20230371277A1. Автор: Harry-Hak-Lay Chuang,Alexander Kalnitsky,Tien-Wei Chiang,Sheng-Haung Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Mems device having a mechanical barrier structure

Номер патента: US20230202833A1. Автор: Marc Füldner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-06-29.

Stator structure having a printed board

Номер патента: US20030218393A1. Автор: Shigeru Nishida,Atsushi Kindaichi. Владелец: Tamagawa Seiki Co Ltd. Дата публикации: 2003-11-27.

Package structure having solder mask layer with low dielectric constant and method of fabricating the same

Номер патента: US20220240367A1. Автор: Kuo-Wei Li,Ming-Hao Wu. Владелец: Unimicron Technology Corp. Дата публикации: 2022-07-28.

Three-dimensional memory devices with channel structures having plum blossom shape

Номер патента: US12089405B2. Автор: Xiaoxin LIU,Weihua Cheng,Lei Xue,Tingting Gao,Wanbo Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-10.

Structures having a molded liner attached to a substrate

Номер патента: US09901002B2. Автор: Kurt JENKINS. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2018-02-20.

Angle-adjustable and/or angled printed circuit board structure having at least two printed circuit board sections and method for producing the same

Номер патента: US09474149B2. Автор: Markus WÖLFEL. Владелец: JUMATECH GMBH. Дата публикации: 2016-10-18.

Surface-acoustic-wave (saw) filter with an electrical conductor having a floating potential

Номер патента: WO2023156107A1. Автор: Thomas Förster,Stefan Freisleben,Markus Mayer,Stefan Ammann,Vikrant Chauhan,Manuel Sabbagh. Владелец: Rf360 Singapore Pte. Ltd.. Дата публикации: 2023-08-24.

Input device with integrated deformable electrode structure for force sensing

Номер патента: US09748952B2. Автор: Joseph Kurth Reynolds,Robert James Bolender,Lin-Hsiang Hsieh,Shwetank Kumar,Narain Kumar VIJAYASHANKER. Владелец: Synaptics Inc. Дата публикации: 2017-08-29.

Mask for patterning electrode structures in thin film el devices

Номер патента: CA1247256A. Автор: Robert A. Boudreau. Владелец: GTE Products Corp. Дата публикации: 1988-12-20.

Methods and structures for generating smooth electrodes and electrode structures with a uniformly smooth surface

Номер патента: WO2024147923A1. Автор: Mohammad Jafar Modarres-Zadeh. Владелец: QORVO US, INC.. Дата публикации: 2024-07-11.

Methods and structures for generating smooth electrodes and electrode structures with a uniformly smooth surface

Номер патента: US20240235513A1. Автор: Mohammad Jafar Modarres-Zadeh. Владелец: Qorvo US Inc. Дата публикации: 2024-07-11.

Electrode structure for formation of dielectric barrier plasma discharge

Номер патента: RU2737280C2. Автор: Леонхард ТРУТВИГ,Мирко ХАНЛЬ,Карл-Отто ШТОРК,Дирк ВАНДКЕ. Владелец: Сайноджи Гмбх. Дата публикации: 2020-11-26.

Electrode structure of crystal unit, crystal unit, and crystal oscillator

Номер патента: US20230130678A1. Автор: Noboru Takahashi,Ryo Kobayashi,Yukihiro Okamoto. Владелец: Maxis 01 Corp. Дата публикации: 2023-04-27.

Image pickup apparatus comprising an image pickup optical system including an optical element having optical incident and optical emergent surfaces and a fine textured structure having a mean pitch shorter than a wavelength of visible light, and an image pickup unit configured to receive an image formed by the image pickup optical system, and meeting a specified diameter condition

Номер патента: US8325267B2. Автор: Kazuhiko Momoki. Владелец: Canon Inc. Дата публикации: 2012-12-04.

Electrostatic actuator with fault tolerant electrode structure

Номер патента: US7521836B2. Автор: Robert W. Horst. Владелец: Tibion Corp. Дата публикации: 2009-04-21.

Conductive bump electrode structure

Номер патента: US11690171B2. Автор: Chin-Chang Liao,Jheng-Fen GUO. Владелец: Singular Wings Medical Co Ltd. Дата публикации: 2023-06-27.

Semiconductor structure, electrode structure and method of forming the same

Номер патента: US20230200254A1. Автор: Chung-Yen Chou,Shih-Chang Liu,Yao-Wen Chang,Fu-Ting Sung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-06-22.

Composite electrode structure and method for manufacturing the same

Номер патента: US20240155854A1. Автор: Tzu-Chien Wei,Han-Tu Lin,Tzu-Sen Su,Shiang Lan. Владелец: National Tsing Hua University NTHU. Дата публикации: 2024-05-09.

Conductive bump electrode structure

Номер патента: US20210368619A1. Автор: Chin-Chang Liao,Jheng-Fen GUO. Владелец: Singular Wings Medical Co Ltd. Дата публикации: 2021-11-25.

Semiconductor constructions having a buried bit line, and methods of forming same

Номер патента: EP1723674A2. Автор: H. Montgomery Manning,Todd R. Abbott. Владелец: Micron Technology Inc. Дата публикации: 2006-11-22.

Method for producing structure wherein aromatic polymer is bonded to base, structure having aromatic polymer chain bonded to conductive base, and electronic device comprising the structure

Номер патента: EP2110398A1. Автор: Hideyuki Higashimura,Rui Ishikawa,Kenta Tanaka,Tsutomu Yokozawa. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2009-10-21.

Composite structure having an integrated support

Номер патента: US20190145550A1. Автор: Francisco Javier Honorato Ruiz,Carlos Garcia Nieto,Enrique GUINALDO FERNÁNDEZ,Luis RODRIGUEZ URBINA,Diego SANCHEZ FRANCO. Владелец: AIRBUS OPERATIONS SL. Дата публикации: 2019-05-16.

Micro-wire electrode structure with single-layer dummy micro-wires

Номер патента: US20150242010A1. Автор: Ronald Steven Cok. Владелец: Individual. Дата публикации: 2015-08-27.

Circuit and structure having high input impedance and DC return

Номер патента: US4050031A. Автор: Paul R. Gray,Mark L. Stephens. Владелец: Signetics Corp. Дата публикации: 1977-09-20.

Configurable circuit structure having reduced susceptibility to interference when using at least two such circuits to perform like functions

Номер патента: US20060033546A1. Автор: Axel Thomsen,Ligang Zhang,Yunteng Huang. Владелец: Yunteng Huang. Дата публикации: 2006-02-16.

Two-phase immersion-type heat dissipation structure having skived fin with high porosity

Номер патента: US20240142181A1. Автор: Chun-Te Wu,Ching-Ming Yang,Tze-Yang Yeh,Yu-Wei Chiu. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2024-05-02.

Camera module structure having electronic device connections formed therein

Номер патента: US20160313628A1. Автор: Qiang Yang,Yoshiyuki Takase,Douglas Stuart Brodie,Takeshi Ichimiya,Shaolong Sui. Владелец: Apple Inc. Дата публикации: 2016-10-27.

Electrode structure of organic electroluminescent display panel and method of manufacturing the same

Номер патента: US20060040133A1. Автор: Ming Lee,Wen-Jeng Lan,Hui-Chang Yu,Ting Chien,Chin Chung Chang Chien. Владелец: Univision Technology Inc. Дата публикации: 2006-02-23.

Transmissive liquid crystal display device having a cholesteric liquid crystal color filter and method of fabricating the same

Номер патента: US20050007523A1. Автор: Jong-Weon Moon,Jae-Hong Hur. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2005-01-13.

Adjustable cavitator structure having double layer retractable sheet

Номер патента: US20240149980A1. Автор: Yao Li,Zhi ZONG,Tiezhi SUN. Владелец: Dalian University of Technology. Дата публикации: 2024-05-09.

Double layer fabric having a high stability weave

Номер патента: AU751899B2. Автор: Henry J Lee,T. Payton Crosby. Владелец: AstenJohnson Inc. Дата публикации: 2002-08-29.

Magnetic recording medium having a magnetic layer containing hexagonal platelet ferrite particles and an unerlayer having a specified thickness

Номер патента: US5503911A. Автор: Nobuyuki Aoki,Yuji Mido,Akira Kisoda,Takumi Haneda,Yukihiro Shimasaki. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1996-04-02.

DOUBLE-LAYER COMPONENT, METHOD FOR PRODUCING A DOUBLE-LAYER COMPONENT AND HEAT ENGINE COMPRISING A PLURALITY OF DOUBLE-LAYER COMPONENTS

Номер патента: US20190242369A1. Автор: Huber Martin. Владелец: . Дата публикации: 2019-08-08.

double layer coating, articles, method of manufacturing a double layer coating, powder composition and coating layer

Номер патента: BR112018009389A2. Автор: Krishnan Sitaraman,Sankarasubramanian Malavarayan,H Rasmussen Don,S Chojecki Gregory,Losenge Lebga-Nebane Janice,C Moosbrugger John. Владелец: Vetco Gray Inc. Дата публикации: 2018-11-13.

Optical communication cable having a reinforced casing

Номер патента: US4318588A. Автор: Guenter Zeidler,Ulrich Oestreich,Gernot Schoeber. Владелец: SIEMENS AG. Дата публикации: 1982-03-09.

Method for making a headgear, preferably a balaclava, with a double layer

Номер патента: EP4321663A1. Автор: Lino Enzo BOSCATO,Fabio BOSCATO. Владелец: Tessma Srl. Дата публикации: 2024-02-14.

Electro-optical device comprising a storage capacitor wherein the second capacitor electrode has a double layer electrode structure and method for manufacturing semiconductor element

Номер патента: US7199853B2. Автор: Kiyotaka Koide. Владелец: Seiko Epson Corp. Дата публикации: 2007-04-03.

A double-layered capsule with a soluble bismuth salt and an antibiotic in the external capsule and a second antibiotic and a potassium/sodium ATPase inhibitor in the internal capsule for therapy against Helicobacter pylori

Номер патента: NZ505655A. Автор: Giovanni Sanso. Владелец: Axcan Pharma Inc. Дата публикации: 2003-09-26.

A double layered roll of cloth which opens out to cover laundry on a drying rack

Номер патента: EP1780327B1. Автор: Giovanni Carbonara. Владелец: Individual. Дата публикации: 2009-12-09.

Fabricating, pressure testing & monitoring a double layer hose assembly

Номер патента: GB2509304B. Автор: Grant Jones Stuart. Владелец: Individual. Дата публикации: 2020-05-20.

Fabricating, pressure testing & monitoring a double layer hose assembly

Номер патента: GB201220452D0. Автор: . Владелец: JONES STUART G. Дата публикации: 2012-12-26.

PROCESS AND COMPOSITION FOR THE PRODUCTION OF A DOUBLE LAYER CHROME-CONTAINED TINLESS STEEL

Номер патента: FR2648479A1. Автор: Tsuneo Inui,Nobuyoshi Shimizu,Fumio Kunishige,Hideaki Hamano. Владелец: Toyo Kohan Co Ltd. Дата публикации: 1990-12-21.

METHOD FOR PRODUCING A DOUBLE-LAYER OR TRIPLE-LAYER SOUND-ABSORBING PANEL AND CORRESPONDING SOUND-ABSORBING PANEL

Номер патента: US20130087408A1. Автор: MÄDER Marco. Владелец: AKUSTIK & INNOVATION GMBH. Дата публикации: 2013-04-11.

LOW TEMPERATURE CURE COATING FORMED VIA A DOUBLE LAYER CURING MECHANISM OF A PIGMENTED WATERBORNE BASELAYER AND A SOLVENTBORNE TOP LAYER

Номер патента: US20180030311A1. Автор: Clark Timothy,December Timothy S.,OZVALD Adam M.. Владелец: BASF COATINGS GMBH. Дата публикации: 2018-02-01.

LOW TEMPERATURE CURE COATING FORMED VIA RESIN-FACILITATED CATALYST MIGRATION BETWEEN LAYERS IN A DOUBLE LAYER CURING MECHANISM

Номер патента: US20190031910A1. Автор: Clark Timothy,December Timothy S.,OZVALD Adam M.,Campbell Donald H.. Владелец: BASF COATINGS GMBH. Дата публикации: 2019-01-31.

LOW TEMPERATURE CURE COATING FORMED VIA POLARITY-FACILITATED CATALYST MIGRATION BETWEEN LAYERS IN A DOUBLE LAYER CURING MECHANISM

Номер патента: US20200172758A1. Автор: Clark Timothy,December Timothy S.,Campbell Donald H.,Ozvald Adam,Harlow Lisa Jean,Turley Kevin Michael,Fa Keqing,Michel Kristen. Владелец: . Дата публикации: 2020-06-04.

Method for forming a double layer wet friction material with cellulose layer

Номер патента: US20210341026A1. Автор: Rashid Farahati,Murat BAKAN,Michael Yanetta. Владелец: Schaeffler Technologies AG and Co KG. Дата публикации: 2021-11-04.

Low temperature cure coating formed via a double layer curing mechanism of a pigmented waterborne baselayer and a solventborne top layer

Номер патента: US20180030311A1. Автор: Timothy Clark,Timothy S. December,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2018-02-01.

A low temperature cure coating formed via a double layer curing mechanism of a pigmented waterborne baselayer and a solventborne top layer

Номер патента: EP3491074A1. Автор: Timothy Clark,Timothy S. December,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2019-06-05.

Anchoring of bar prestressing members having a double-layer plastics sheath

Номер патента: DE3210587A1. Автор: Des Erfinders Auf Nennung Verzicht. Владелец: Individual. Дата публикации: 1983-10-06.

Dye-sensitized solar cell having a double-layer nanotube structure and manufacturing method thereof

Номер патента: TW201001724A. Автор: Chien-Chon Chen,Eric Wei-Guang Diau. Владелец: Dc Solar Corp. Дата публикации: 2010-01-01.

OPTICAL ARTICLE COMPRISING A DOUBLE-LAYER ABRASION AND SCRATCH RESISTANT COATING AND METHOD FOR PRODUCTION THEREOF

Номер патента: US20170003420A1. Автор: Cano Jean-Paul,Bovet Christian,Kudla Amelie,LECLAIRE Yves,Berit-Debat Fabien. Владелец: . Дата публикации: 2017-01-05.

ONE COMPONENT, LOW TEMPERATURE CURE COATING FORMED VIA A DOUBLE LAYER CURING MECHANISM

Номер патента: US20180030310A1. Автор: December Timothy S.,WECHSLER Dominik,HONEYMAN Charles H.,OZVALD Adam M.. Владелец: BASF COATINGS GMBH. Дата публикации: 2018-02-01.

HEATING SYSTEM FOR PRODUCTION OF A DOUBLE-LAYER TUBE

Номер патента: US20220072595A1. Автор: Saman Bora. Владелец: . Дата публикации: 2022-03-10.

METHOD FOR PRODUCING A DOUBLE-LAYER COATED CUTTING TOOL WITH IMPROVED WEAR RESISTANCE

Номер патента: US20170298497A1. Автор: Inoue Kenichi,SASAKI Tomoya,Kurapov Denis,Morishita Kana,KOSEKI Shuho,Abusuilik Saleh Breik. Владелец: . Дата публикации: 2017-10-19.

SYSTEMS AND METHODS FOR LOW-OXYGEN CRYSTAL GROWTH USING A DOUBLE-LAYER CONTINUOUS CZOCHRALSKI PROCESS

Номер патента: US20180347071A1. Автор: Kimbel Steven Lawrence. Владелец: . Дата публикации: 2018-12-06.

Method and apparatus for feeding a double-layered food product

Номер патента: EP0879557B1. Автор: Kazuyoshi Onoguchi,Nobuo Kajikawa,Yoshibumi Otake. Владелец: Rheon Automatic Machinery Co Ltd. Дата публикации: 2002-08-21.

Injection molding a double-layer preform

Номер патента: GB2133340A. Автор: Katashi Aoki. Владелец: Individual. Дата публикации: 1984-07-25.

A double layer air-mattress

Номер патента: KR200449477Y1. Автор: 문성대. Владелец: (주)힐닉스. Дата публикации: 2010-07-16.

CELL WITH A DOUBLE LAYER OF LIQUID CRYSTAL, USING THE ELECTRICALLY CONTROLLED BIREFRINGENCE EFFECT AND METHOD FOR MANUFACTURING A UNIAXIC NEGATIVE ANISOTROPY ANISOTROPY MEDIUM FOR USE IN THIS CELL

Номер патента: FR2595157A1. Автор: Jean-Frederic Clerc,Aime Perrin,Jean-Claude Deutsch. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1987-09-04.

Plant for feeding a double layer of powder or granular material into the cavity of the mould for ceramic tile production

Номер патента: CN100589949C. Автор: E·比吉. Владелец: L B oHG S P A. Дата публикации: 2010-02-17.

Laminate formed by a tin-plated steel sheet, carrying a double layer of chromium, and by a film of copolyester resin, and method for producing it

Номер патента: FR2664532A1. Автор: Kawamura Hiroaki,Kondo Yoshikazu,Tanaka Atsuo,Ishida Masatoki,Fujimoto Terunori,Inui Tsuneo. Владелец: Toyo Kohan Co Ltd. Дата публикации: 1992-01-17.

A double-layered octagonal wave dissipating block in a large formation and breakwater therewith

Номер патента: KR20220132782A. Автор: 원 회 양,송주민. Владелец: 송주민. Дата публикации: 2022-10-04.

CELL WITH A DOUBLE LAYER OF LIQUID CRYSTAL, USING THE ELECTRICALLY CONTROLLED BIREFRINGENCE EFFECT AND METHOD FOR MANUFACTURING A UNIAXIC NEGATIVE ANISOTROPY ANISOTROPY MEDIUM FOR USE IN THIS CELL

Номер патента: FR2595157B1. Автор: Jean-Frederic Clerc,Aime Perrin,Jean-Claude Deutsch. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1988-04-29.

Optical article comprising a double-layer abrasion and scratch resistant coating and method for production thereof

Номер патента: PL2092377T3. Автор: Christian Bovet,Jean-Paul Cano,Fabien Berit-Debat,Yves Leclaire,Amelie Kudla. Владелец: Essilor Int. Дата публикации: 2012-07-31.

Touchpad with a Double-Layer Printed Circuit Board Structure

Номер патента: US20110025615A1. Автор: Wei Feng,Yun Yang,Bangjun He,Jianbo Yang. Владелец: Individual. Дата публикации: 2011-02-03.

Method and apparatus for feeding a double-layered food product

Номер патента: KR20010095297A. Автор: 타시로야스노리,호소야마사키. Владелец: 레온 지도키 가부시키가이샤. Дата публикации: 2001-11-03.

A double-layered type liquid-crystal display device

Номер патента: EP0352101A2. Автор: Akitsugu Hatano. Владелец: Sharp Corp. Дата публикации: 1990-01-24.

Prefab panel for realizing a double layer wall in buildings

Номер патента: US20080066412A1. Автор: Valente FRANCO,Peccolo MAURIZIO. Владелец: BIT Tech Ltd. Дата публикации: 2008-03-20.

Magnetic recording medium with a double-layered structure and method of manufacturing the same

Номер патента: EP0482217A1. Автор: Takeo 1725-60 Kamigoucho Ito,Hirotaka 2-50 Uragoucho Yokoyama. Владелец: Toshiba Corp. Дата публикации: 1992-04-29.

Process for preparing a nanocomposite material based on a polymeric matrix and a double layer hydroxide, nanocomposite material, and shaped article thereof

Номер патента: BR9906830A. Автор: Hartmut Rudolf Fischer,Leon Hubertus Gielgens. Владелец: Tno. Дата публикации: 2000-10-17.

Apparatus for manufacturing a double layer shading fabric and fabric using the same

Номер патента: KR102033343B1. Автор: 김관동. Владелец: 주식회사 중앙산업. Дата публикации: 2019-10-18.

Laminate floor covering with a double-layered impact sound insulation system

Номер патента: EP1289752B1. Автор: Dieter DÖRING. Владелец: Kronospan Technical Co Ltd. Дата публикации: 2004-05-19.

Method and apparatus for feeding a double-layered food product

Номер патента: US5882711A. Автор: Kazuyoshi Onoguchi,Nobuo Kajikawa,Yoshibumi Otake. Владелец: Rheon Automatic Machinery Co Ltd. Дата публикации: 1999-03-16.

Necktie has a double layer lining of different

Номер патента: DE1814515A1. Автор: auf Nichtnennung. P A4lh 7-00 Antrag. Владелец: Collins and Aikman Corp. Дата публикации: 1970-07-09.

A double-layer forming wire

Номер патента: AU476338B2. Автор: Lorente Codorniu Francisco. Владелец: Nordiska Maskinfilt AB. Дата публикации: 1976-09-16.

A DOUBLE LAYER COMPOSITE PACKAGING MATERIAL SPECIALLY USEFUL FOR FOOD PRODUCTS.

Номер патента: ES2235223T3. Автор: Luigi Rivoltella. Владелец: Luigi Rivoltella. Дата публикации: 2005-07-01.

A double layer type air vinyl house for dry

Номер патента: KR101012453B1. Автор: 정종기,강재인. Владелец: 정종기. Дата публикации: 2011-02-10.

Process of molding a double-layer sole, mold used and product directly obtained.

Номер патента: IT201900018407A1. Автор: Graziano Rogante. Владелец: Pu Ro S R L. Дата публикации: 2021-04-10.

A method of making shoes with a double layer sole

Номер патента: SU523629A3. Автор: Клее Вернер. Владелец: Десма-Верке Гмбх (Фирма). Дата публикации: 1976-07-30.

Flat product of metal, in particular, in the form of a wall for heat exchangers, as well as a heat exchanger with a double layer wall of copper and titanium

Номер патента: US7296348B2. Автор: Heinz Sibum. Владелец: Deutsche Titan GmbH. Дата публикации: 2007-11-20.

Device for wrapping a cotton fleece, which is used in particular for the production of tampons for feminine hygiene, with a pull-back tape in a double layer

Номер патента: DE2114529A1. Автор: Stefan Moedling Simon (Österreich). M. Владелец: Dr. Kart Hahn KG, 4000 Düsseldorf. Дата публикации: 1972-10-05.

Heating system for production of a double-layer tube

Номер патента: EP3894102A4. Автор: Bora SAMAN. Владелец: Net Boru Sanayi Ve Dis Ticaret Kollektif Sirketi Bora Saman Ve Ortagi. Дата публикации: 2022-11-02.

Method and device for feeding a double-layered food

Номер патента: DE69807282T2. Автор: Kazuyoshi Onoguchi,Nobuo Kajikawa,Yoshibumi Otake. Владелец: Rheon Automatic Machinery Co Ltd. Дата публикации: 2003-04-10.

Manufacturing process of a double layer textile reinforcement for the construction of waterproof bituminous sheets for roofs and the reinforcement thus obtained

Номер патента: BR9500603A. Автор: Robert Groten,Ulrich Jahn,Jean Baravian,Jean-Jacques Beck. Владелец: Freudenberg Spunweb SA. Дата публикации: 1995-09-26.

Method of preparing a double layered, palladium-only three-way catalyst

Номер патента: US20040223897A1. Автор: Gwon Koo Yeo. Владелец: Hyundai Motor Co. Дата публикации: 2004-11-11.

Necktie has a double layer lining of different

Номер патента: CH493219A. Автор: H Ackerman Myron. Владелец: Collins & Aikman Corp. Дата публикации: 1970-07-15.

A double-layered type liquid-crystal display device

Номер патента: EP0352101B1. Автор: Akitsugu Hatano. Владелец: Sharp Corp. Дата публикации: 1994-09-14.

Method for including a double layer security mark in digital document data and document to be printed

Номер патента: EP2277712A3. Автор: Reiner Eschbach. Владелец: Xerox Corp. Дата публикации: 2012-03-21.

SYSTEM FOR FOOD WITH POWDER OR GRANULAR MATERIAL A DOUBLE LAYER IN THE CAVITY OF THE MOLD FOR THE MANUFACTURE OF CERAMIC TILES

Номер патента: ITRE20040097A1. Автор: Ermes Bigi. Владелец: Lb Officine Meccaniche Spa. Дата публикации: 2004-11-02.

Bletilla is grown seedlings with linking a double-layer membrane energy-conserving greenhouse

Номер патента: CN212993340U. Автор: 王永,熊鹏飞,韩见宇,郑听. Владелец: GUIZHOU BOTANICAL GARDEN. Дата публикации: 2021-04-20.

Method for weaving a double layered fabric

Номер патента: EP1308546B1. Автор: Willi Knecht. Владелец: ITEMA (Switzerland) Ltd. Дата публикации: 2008-07-09.

Device for fixing the lower cover of a double-layered covering to the cylinder surface of a printing cylinder in printing machines

Номер патента: EP0070378B1. Автор: Wilfried Vogt. Владелец: HEIDELBERGER DRUCKMASCHINEN AG. Дата публикации: 1984-12-05.

A sleeve gluing structure and method of paper vessel with a double layer

Номер патента: KR100686729B1. Автор: 양성우. Владелец: 양성우. Дата публикации: 2007-02-26.

Method of preparing a double layered, palladium-only three-way catalyst

Номер патента: US7407911B2. Автор: Gwon Koo Yeo. Владелец: Hyundai Motor Co. Дата публикации: 2008-08-05.

a double-layer quilt

Номер патента: KR200448736Y1. Автор: 이양수,이정수. Владелец: 배미희. Дата публикации: 2010-05-11.

Valve prosthesis assembly including a double-layer vascular graft

Номер патента: US20230233327A1. Автор: Patrick Donohue Rudersdorf. Владелец: Acco Health Inc. Дата публикации: 2023-07-27.

METHOD FOR MAKING A HEADGEAR, PREFERABLY A BALACLAVA, WITH A DOUBLE LAYER

Номер патента: IT202100003518A1. Автор: Lino Enzo BOSCATO,Fabio BOSCATO. Владелец: Tessma S R L. Дата публикации: 2022-08-16.

Method for producing a double-layered knitted or knitted fabric on a knitting or knitting machine with two rows of needles arranged obliquely downwards

Номер патента: DE548154C. Автор: . Владелец: Individual. Дата публикации: 1932-04-07.

Process for obtaining a double-layer coating and powder lacquer for implementing this process.

Номер патента: EP0649451A1. Автор: Joachim Woltering,Wolfgang Kranig,Klaus Cibura,Josef Rademacher,Christopher Hilger. Владелец: BASF Lacke und Farben AG. Дата публикации: 1995-04-26.

Seat cover for protecting motor car seats made of a double-layer plastic film

Номер патента: SK49199A3. Автор: Joachim Horn. Владелец: Horn & Bauer Gmbh & Co Kg. Дата публикации: 2000-01-18.

Method of making external cover of building a double-layer for roofs, walls and floors

Номер патента: AU1372200A. Автор: Xinjian ZOU. Владелец: Individual. Дата публикации: 2001-06-04.

A double-layer sock having inverted, side-by-side toe closure seams

Номер патента: AU2002219876A1. Автор: David B. Higgins. Владелец: Knit Rite Inc. Дата публикации: 2002-05-15.

One component, low temperature cure coating formed via a double layer curing mechanism

Номер патента: US20180030310A1. Автор: Charles H. Honeyman,Timothy S. December,Dominik Wechsler,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2018-02-01.

A one component, low temperature cure coating formed via a double layer curing mechanism

Номер патента: EP3491039A1. Автор: Charles H. Honeyman,Timothy S. December,Dominik Wechsler,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2019-06-05.

A one component, low temperature cure coating formed via a double layer curing mechanism

Номер патента: WO2018019685A1. Автор: Charles H. Honeyman,Timothy S. December,Dominik Wechsler,Adam M. OZVALD. Владелец: BASF COATINGS GMBH. Дата публикации: 2018-02-01.

Size adjustable tights with a double layer waistband

Номер патента: DK3175724T3. Автор: Andreas Röhrich. Владелец: Wolford AG. Дата публикации: 2018-09-17.

DOUBLE-LAYER CONDUCTIVE LED PHOTOELECTRIC GLASS WITH VOLTAGE COMPENSATION AND MANUFACTURING PROCESS THEREOF

Номер патента: US20200376813A1. Автор: HUANG ZHIMING. Владелец: iMGS SMART GLASS TECHNOLOGIES (FUJIAN) CO.,LTD. Дата публикации: 2020-12-03.

Mutually capacitive touch screen with electrodes arranged on double-layer conductive material thin film

Номер патента: CN101882040B. Автор: 莫良华,张靖恺,彭玲. Владелец: FocalTech Systems Ltd. Дата публикации: 2012-12-19.

Electrode structure, display panel and display device

Номер патента: US09778515B2. Автор: Ling Wu,Qiong SONG,Boping SHEN. Владелец: Xiamen Tianma Microelectronics Co Ltd. Дата публикации: 2017-10-03.

Eyeglasses assembly structure having nose support

Номер патента: US09958702B1. Автор: Pen-Wei Chen. Владелец: Prohero Group Co Ltd. Дата публикации: 2018-05-01.

Method for three-dimensional or multilayer weaving of a fibrous structure and fibrous structure having a three-dimensional or multilayer weave

Номер патента: US20240229307A9. Автор: Dominique Marie Christian Coupe,Célline KRIBS,Adrienne RETIVEAU-LECA. Владелец: Safran SA. Дата публикации: 2024-07-11.

Fan dynamic pressure structure having a plastic frame integrally formed around an oil-containing sintered metal powder bearing

Номер патента: US20200362872A1. Автор: Ping-Ling Wang. Владелец: F&p Precision Co Ltd. Дата публикации: 2020-11-19.

Electrode structures having anti-inflammatory properties and methods of use

Номер патента: WO2007114860A8. Автор: Robert S Kieval,Martin A Rossing,Mary L Cole. Владелец: Mary L Cole. Дата публикации: 2008-08-07.

Electrode structures having anti-inflammatory properties and methods of use

Номер патента: EP1977542A2. Автор: Robert S. Kieval,Martin A. Rossing,Mary L. Cole. Владелец: CVRX Inc. Дата публикации: 2008-10-08.

Method of fabricating an object with a thin wall having a precisely shaped slit

Номер патента: US3798741A. Автор: J Fletcher,W Gross,W Henley,B Swirsky,P Christopher. Владелец: National Aeronautics and Space Administration NASA. Дата публикации: 1974-03-26.

Electrode structure and capacitance sensor having the same

Номер патента: US20150054529A1. Автор: Yu-Chou Yeh,Ting-Ching Lin,Yi-Chin Chen,Kun-Ming Chang. Владелец: J Touch Corp. Дата публикации: 2015-02-26.

Model eye producing a speckle pattern having a reduced bright-to-dark ratio for use with optical measurement system for cataract diagnostics

Номер патента: WO2016089395A1. Автор: Wei Xiong,Carmen Canovas Vidal,Daniel R. Neal,Richard J. Copland,Stephen W. Farrer,Thomas D. Raymond,Paul D. Pulaski. Владелец: AMO Wavefront Sciences, LLC.. Дата публикации: 2016-06-09.

Electrode structure, display panel, and electronic device

Номер патента: US12078898B2. Автор: YANG Hu,Peng Jiang,Xiaoxiao Chen,Ning Zhu,Yuanhui Guo,Yun Li,Chuang CHEN,Jiantao Liu,Yujie Gao,Xia Shi. Владелец: Wuhan BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-09-03.

Electrode structure, display panel, and electronic device

Номер патента: US20240353724A1. Автор: YANG Hu,Peng Jiang,Xiaoxiao Chen,Ning Zhu,Yuanhui Guo,Yun Li,Chuang CHEN,Jiantao Liu,Yujie Gao,Xia Shi. Владелец: Wuhan BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-10-24.

Model eye producing a speckle pattern having a reduced bright-to-dark ratio for use with optical measurement system for cataract diagnostics

Номер патента: US09468369B2. Автор: Wei Xiong,Carmen Canovas Vidal,Daniel R. Neal,Richard J. Copland,Stephen W. Farrer,Thomas D. Raymond,Paul D. Pulaski,Daniel R. Hamrick. Владелец: AMO Wavefront Sciences LLC. Дата публикации: 2016-10-18.

Layered structure having double order frequency-selective characteristic

Номер патента: RU2405216C2. Автор: Кристиан Томас,Мартин ВАНДЕЛЬ,Кристиан ТОМАС (DE),Мартин ВАНДЕЛЬ (DE). Владелец: Эйрбас Дойчланд Гмбх. Дата публикации: 2010-11-27.

Structure having gel-like covering on its surface

Номер патента: RU2671908C1. Автор: Йосуке Акуцу,Синия Ивамото,Кейсуке НИУУ,Томоюки Миядзаки,Есиаки ОКАДА. Владелец: Тойо Сейкан Ко., Лтд.. Дата публикации: 2018-11-07.

Manufacture of fibrous structure having variable thickness, by three-dimensional weaving

Номер патента: RU2523251C2. Автор: Доминик КУП,Эрик БУЙОН,Бруно ДАМБРИН. Владелец: Снекма Пропюльсьон Солид. Дата публикации: 2014-07-20.

Mirror having a field emission information display

Номер патента: US20080018259A1. Автор: Kuei Wen Cheng. Владелец: Individual. Дата публикации: 2008-01-24.

Hybrid structure having suspension quality

Номер патента: EP3984814A1. Автор: Ilan Ben Meir. Владелец: Tetro Ltd. Дата публикации: 2022-04-20.

Honeycomb body with radial honeycomb structure having transition structural component and extrusion die therefor

Номер патента: EP3676483A1. Автор: Amit Halder. Владелец: Corning Inc. Дата публикации: 2020-07-08.

Honeycomb body with radial honeycomb structure having transition structural component and extrusion die therefor

Номер патента: US20200254433A1. Автор: Amit Halder. Владелец: Corning Inc. Дата публикации: 2020-08-13.

Method for controlling structure of nano-scale substance, and method for preparing low dimensional quantum structure having nano-scale using the method for controlling structure

Номер патента: US20110209980A1. Автор: Koichi Inoue,Kenzo Maehashi,Kazuhiko Matsumoto,Yasuhide Ohno. Владелец: Individual. Дата публикации: 2011-09-01.

Method for controlling structure of nano-scale substance, and method for preparing low dimensional quantum structure having nano-scale using the method for controlling structure

Номер патента: US20110214983A1. Автор: Koichi Inoue,Kenzo Maehashi,Yasuhide Ohno,Kazuhike Matsumoto. Владелец: Individual. Дата публикации: 2011-09-08.

Method for controlling structure of nano-scale substance, and method for preparing low dimensional quantum structure having nano-scale using the method for controlling structure

Номер патента: US7964066B2. Автор: Koichi Inoue,Kenzo Maehashi,Kazuhiko Matsumoto,Yasuhide Ohno. Владелец: JAPAN SCIENCE AND TECHNOLOGY AGENCY. Дата публикации: 2011-06-21.

Seamless unitary deflection member for making fibrous structures having increased surface area and process for making same

Номер патента: US11761151B2. Автор: John Allen Manifold,James Michael Singer,John Leslie Brent. Владелец: Procter and Gamble Co. Дата публикации: 2023-09-19.

Magnetic thin film media with a protective layer of CNx having a plurality of compositions

Номер патента: US20030044650A1. Автор: Richard White,George Tyndall,Hong Deng. Владелец: Hitachi Global Storage Technologies Netherlands BV. Дата публикации: 2003-03-06.

Systems and methods for designing and fabricating multi-layer structures having thermal expansion properties

Номер патента: US20060257096A1. Автор: Phillip Barth. Владелец: Individual. Дата публикации: 2006-11-16.

Exhaust structure having rib

Номер патента: US20240309793A1. Автор: Vikas Sheth,Nataraj SRINIVASAN. Владелец: Caterpillar Inc. Дата публикации: 2024-09-19.

Tin-containing zeolitic material having a BEA framework structure

Номер патента: US09999878B2. Автор: Ulrich Müller,Andrei-Nicolae Parvulescu,Patrick Wolf,Georg UHL,Nicolas VAUTRAVERS,Joaquim H. Teles,Ceri Hammond,Ive Hermans. Владелец: BASF SE. Дата публикации: 2018-06-19.

Seamless unitary deflection member for making fibrous structures having increased surface area and process for making same

Номер патента: US09926667B2. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2018-03-27.

Patient interface device with a frame assembly having a double-Y supporting structure

Номер патента: US09925349B2. Автор: Gregory John Jablonski. Владелец: Koninklijke Philips NV. Дата публикации: 2018-03-27.

Method for fabricating a magnetic writer having a gradient in saturation magnetization of the shields

Номер патента: US09741366B1. Автор: Feng Liu,Xiaojun Zhang,Ming Jiang,Jinqiu Zhang,Ming Sun,Yunfei Li. Владелец: Western Digital Fremont LLC. Дата публикации: 2017-08-22.

Method for forming an electrode structure for a capacitive touch sensor

Номер патента: EP2958704A1. Автор: Camilo PRIETO RIO,Yuk Kwan CHAN. Владелец: M Solv Ltd. Дата публикации: 2015-12-30.

Method for forming an electrode structure for a capacitive touch sensor

Номер патента: WO2014128440A4. Автор: Camilo PRIETO RIO,Yuk Kwan CHAN. Владелец: M-Solv Ltd. Дата публикации: 2014-10-09.

Scintillator having a phase separation structure and radiation detector using the same

Номер патента: US20140110587A1. Автор: Toru Den,Yoshihiro Ohashi,Nobuhiro Yasui. Владелец: Canon Inc. Дата публикации: 2014-04-24.

Structure having movable center for child

Номер патента: CA3224308A1. Автор: Wei Li. Владелец: Dongguan Jinwang Children Products Co ltd. Дата публикации: 2023-01-05.

Method and apparatus for testing a semiconductor structure having top-side and bottom-side connections

Номер патента: US20070096760A1. Автор: David Patten,Addi Mistry,Edmond Cheng. Владелец: Individual. Дата публикации: 2007-05-03.

Polymer-metal sandwich structure having in situ-formed flame retardant and method of manufacturing the same

Номер патента: US20220388290A1. Автор: Seongchan Pack,Venkateshwar R. Aitharaju. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS LLC. Дата публикации: 2022-12-08.

Patient transport apparatus having a backup power system

Номер патента: AU2023257277A1. Автор: Anish Paul,Krishna Sandeep Bhimavarapu,Madhu Sandeep Thota. Владелец: Stryker Corp. Дата публикации: 2024-07-11.

Linear motion bearing with plate retaining structure having a plurality of pieces

Номер патента: EP2593687A1. Автор: Alison Ng. Владелец: Thomson Industries Inc. Дата публикации: 2013-05-22.

Fan structure having integrated rotor impeller, and methods of producing the same

Номер патента: US20200072232A1. Автор: Peter Hall,Shawn Alstad,Ryan Bonde. Владелец: Honeywell International Inc. Дата публикации: 2020-03-05.

Patient transport apparatus having a backup power system

Номер патента: CA3242695A1. Автор: Anish Paul,Krishna Sandeep Bhimavarapu,Madhu Sandeep Thota. Владелец: Stryker Corp. Дата публикации: 2023-10-26.

Catalyst structure having a core-shell structure with a controlled surface morphology and preparation method thereof

Номер патента: US20230234031A1. Автор: Jieun Kim,Doohwan Lee,Dohyeon HAN. Владелец: Industry Cooperation Foundation of University of Seoul. Дата публикации: 2023-07-27.

Network structure having excellent compression durability

Номер патента: US09970140B2. Автор: Teruyuki Taninaka,Shinichi Kobuchi,Hiroyuki Wakui. Владелец: Toyobo Co Ltd. Дата публикации: 2018-05-15.

Structural object for road and road structure having the same

Номер патента: US09777449B2. Автор: Kenji Tadakuma. Владелец: Toyota Motor Corp. Дата публикации: 2017-10-03.

Cable trolley having a swivel assembly and coupling link for aerial safety harness

Номер патента: US09758178B2. Автор: Donald PERRY. Владелец: Individual. Дата публикации: 2017-09-12.

Three-electrode structure for capacitive deionization desalination

Номер патента: US09751779B1. Автор: Joydeep Dutta,Karthik LAXMAN KUNJALI. Владелец: Sultan Qaboos University. Дата публикации: 2017-09-05.

Proppant discharge system having a container and the process for providing proppant to a well site

Номер патента: US09718610B2. Автор: John OREN. Владелец: Oren Technologies LLC. Дата публикации: 2017-08-01.

Multilayer structures having annular profiles

Номер патента: US09481143B2. Автор: Robert E. Wrisley,Joseph Dooley,Mark A. Barger,Sam L. Crabtree,Calvin L. Pavlicek,Jeffrey M. Robacki. Владелец: Dow Global Technologies LLC. Дата публикации: 2016-11-01.

Electrode structure for radio frequency localized heating of tumor bearing tissue

Номер патента: US4140130A. Автор: Frederick K. Storm, III. Владелец: Individual. Дата публикации: 1979-02-20.

Automotive glass structure having feature lines and related method of manufacture

Номер патента: EP4100373A1. Автор: Michael Pilliod,Rosemary MOTTSMITH,William S. SWENEY,Christos GOUGOUSSIS,Gregoire HAMEL. Владелец: Tesla Inc. Дата публикации: 2022-12-14.

Liquid-cooling heat dissipation structure having nonlinear fin array and method for manufacturing the same

Номер патента: US20240247882A1. Автор: Kuo-Wei Lee,Chien-Cheng Wu,Tze-Yang Yeh,Chun-Lung Wu. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2024-07-25.

Abrasive article having a plurality of precisely-shaped abrasive composites

Номер патента: EP2240297A2. Автор: Scott R. Culler,David M. Moses,John T. Boden. Владелец: 3M Innovative Properties Co. Дата публикации: 2010-10-20.

Support element for a lumbar support device, lumbar support device, and seat having a lumbar support device

Номер патента: US20240270134A1. Автор: Erich Dorfler,Ronny GEHLMANN,Berthold Bocsanyi,Jens Donat. Владелец: Gentherm Praezision Se. Дата публикации: 2024-08-15.

Structure having liquid film on the surface thereof

Номер патента: US09968965B2. Автор: Shinya Iwamoto,Yosuke Akutsu. Владелец: Toyo Seikan Group Holdings Ltd. Дата публикации: 2018-05-15.

Method of preparing lithium adsorption structure having large surface area

Номер патента: US09795943B2. Автор: Jae-Chun Lee,Kang-Sup CHUNG,Taegong Ryu,Hye-Jin Hong,Byoung-Gyu Kim,In-Su Park,Jungho Ryu. Владелец: Korea Institute of Geoscience and Mineral Resources KIGAM. Дата публикации: 2017-10-24.

Method of fabricating fiber reinforced composite structure having stepped surface

Номер патента: US09770872B2. Автор: Jack A. Woods,Andrew E. Modin,Robert D. Hawkins. Владелец: Boeing Co. Дата публикации: 2017-09-26.

Floating marine structure having floats

Номер патента: US09643693B2. Автор: Dong Ho Jung,Hyeon Ju KIM,Sa Young Hong,Yong Ju Kwon,Bo Woo Nam. Владелец: Korea Institute of Ocean Science and Technology KIOST. Дата публикации: 2017-05-09.

Interposer structure having optical fiber connection and related fiber optic connector for the same

Номер патента: US09551849B2. Автор: James Phillip Luther,James Scott Sutherland,Douglas Llewellyn Butler,Micah Colen Isenhour,Dennis Michael Knecht. Владелец: CORNING OPTICAL COMMUNICATIONS LLC. Дата публикации: 2017-01-24.

Impact resistant cladding construction material having a layered structure for use as a panel for floor, wall or roof

Номер патента: US09523199B2. Автор: Jerry Flick. Владелец: Fortified Housing LLC. Дата публикации: 2016-12-20.

Electronic device having touch screen panel, vibration mechanisms, and peripheral support structures having different rigidities

Номер патента: US09459713B2. Автор: Yusuke Adachi,Ryo Okumura. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2016-10-04.

Liquid crystal display with electrode structure having small and high surface resistivity electrodes preventing accumulation of static electricity on electrode segments

Номер патента: US6028654A. Автор: Osamu Tanaka,Yukito Toriumi. Владелец: ROHM CO LTD. Дата публикации: 2000-02-22.

Thin film getter structure having miniature heater and manufacturing method thereof

Номер патента: EP4074650A3. Автор: Tao Lu,Shinan Wang. Владелец: Shanghai Industrial Technology Research Institute. Дата публикации: 2022-10-26.

Vehicle A-Pillar Garnish Structure Having No Clip Escape Hole

Номер патента: US20240199127A1. Автор: Han-Seok Song. Владелец: Kia Corp. Дата публикации: 2024-06-20.

Patient interface with a seal-forming structure having varying thickness

Номер патента: EP4371597A3. Автор: Matthew Eves,Lemmy Nga,Gerard Michael Rummery,Rupert Christian Scheiner. Владелец: ResMed Pty Ltd. Дата публикации: 2024-07-17.

Method and system of air/environmental parameter based automatic closing of one or more valves to isolate breathable air supplied to one or more levels of a structure having a firefighter air replenishment system implemented therein

Номер патента: WO2024006172A1. Автор: Anthony J. Turiello. Владелец: Rescue Air Systems, Inc.. Дата публикации: 2024-01-04.

Nose bridge strip with scent releasing mechanism and mask structure having the same

Номер патента: US20220072342A1. Автор: Cheng-Lang Tsai. Владелец: Individual. Дата публикации: 2022-03-10.

Footwear sole structure having a fluid-filled chamber including a tensile member

Номер патента: US20230309653A1. Автор: Shaun J. Hensley,Sean Conway,Bret P. Liebeno,Deni MEI,Sean STAM,Geoff WESTON,Gregory P. Ponitz. Владелец: Nike Inc. Дата публикации: 2023-10-05.

Covering structure having automatic coupling system

Номер патента: US20070024079A1. Автор: Donald Wheatley. Владелец: Individual. Дата публикации: 2007-02-01.

Optical structures having integrated component layers

Номер патента: US20160154508A1. Автор: Tomohiro Ishikawa,Lili Tian,Ashish Hersh Chaturvedi. Владелец: Corning Inc. Дата публикации: 2016-06-02.

Seating structure having a knitted suspension material

Номер патента: US12070132B2. Автор: Ethan Mcgraw. Владелец: MillerKnoll Inc. Дата публикации: 2024-08-27.

Method for producing parts having a compact polyurethane (pur) sealing layer

Номер патента: CA2515597A1. Автор: Josef Renkl,Thomas Sonntag. Владелец: Individual. Дата публикации: 2004-09-16.

Substrate structure having cold sprayed layer and method for manufacturing the same

Номер патента: US20220234071A1. Автор: Chih-Hung Shih,Hung-An Chao. Владелец: Amulaire Thermal Tech Inc. Дата публикации: 2022-07-28.

Method of Manufacturing a Surgical Implant Having a Marking

Номер патента: US20160106530A1. Автор: Barbara Schuldt-Hempe,Boris Batke,Jenifer Schneidereit. Владелец: Johnson and Johnson Medical GmbH. Дата публикации: 2016-04-21.

Slide fastener having a filling core

Номер патента: US3812555A. Автор: T Yoshida. Владелец: Yoshida Kogyo KK. Дата публикации: 1974-05-28.

Heating resistor type flow measuring device housing structure having projection and recess for preventing mis-installation

Номер патента: US7469582B2. Автор: Naoki Saito,Shinya Igarashi,Akio Yasukawa,Akira Takasago,Hiromu Kikawa,Masayuki Kozawa. Владелец: Hitachi Car Engineering Co Ltd. Дата публикации: 2008-12-30.

Structure having several annular shaver cutter nets capable of rotating forwardly and reversely

Номер патента: EP3858564A1. Автор: Rui Wang. Владелец: Individual. Дата публикации: 2021-08-04.

Evaluating a structure having a microscopic dimension with a low energy x-ray beam

Номер патента: WO2024134250A1. Автор: David A. Reed,Bruno W. Schueler. Владелец: Nova Measuring Instruments Inc.. Дата публикации: 2024-06-27.

Artificial turf structure having improved buffering performance

Номер патента: US20240287747A1. Автор: Kwang Su Cho,Ki Tae BAE,Hyun Joung JUN,Seung Min Han,Eun Seon JEONG,Se Jun HWANG,Hye In BANG. Владелец: Kolon Glotech Inc. Дата публикации: 2024-08-29.

Footwear upper having a unitary knit structure and method of manufacturing

Номер патента: US20240365915A1. Автор: Michael A. Carriero,Evan W. Jones,Sanchari Ashishkumar Mahapatra. Владелец: Nike Inc. Дата публикации: 2024-11-07.

Thin film polymer structure having different modification on opposite sides thereof

Номер патента: US09956751B2. Автор: Takahiro Goto,Shinji Takeoka,Toshinori Fujie,Yosuke Okamura,Saori Utsunomiya. Владелец: Nanotheta Co Ltd. Дата публикации: 2018-05-01.

Bicycle frame structure having rear frame and front frame

Номер патента: US09908582B1. Автор: Sung Dae Lim,Jungnam CHOI. Владелец: Hyundai Motor Co. Дата публикации: 2018-03-06.

Optical structures having integrated component layers

Номер патента: US09874961B2. Автор: Tomohiro Ishikawa,Lili Tian,Ashish Hersh Chaturvedi. Владелец: Corning Inc. Дата публикации: 2018-01-23.

Magnetic read head having a CPP MR sensor electrically isolated from a top shield

Номер патента: US09779767B2. Автор: Robert E. Fontana, Jr.,Jason Liang,Robert G. Biskeborn,Calvin S. Lo. Владелец: International Business Machines Corp. Дата публикации: 2017-10-03.

Cable assembly with cable attach structure having off-axis fiber routing

Номер патента: US09778427B2. Автор: James Phillip Luther,Xin Liu,Micah Colen Isenhour,Dennis Michael Knecht. Владелец: CORNING OPTICAL COMMUNICATIONS LLC. Дата публикации: 2017-10-03.

Fibrous structure having variable numbering yarns

Номер патента: US09597841B2. Автор: Dominique Coupe,Bruno Jacques Gerard Dambrine,Jonathan Goering,Jean-Noel Mahieu,Brock Gilbertson. Владелец: SNECMA SAS. Дата публикации: 2017-03-21.

Multi-component sole structure having an auxetic configuration

Номер патента: US09554622B2. Автор: Tory M. Cross. Владелец: Nike Inc. Дата публикации: 2017-01-31.

Furnishing element having a folding support shelf and/or a folding support structure

Номер патента: US09538839B2. Автор: Carlo Favaro. Владелец: Arper SpA. Дата публикации: 2017-01-10.

Tubular beam of an automotive structure having an improved impact behavior

Номер патента: US09533641B2. Автор: Olivier Rebuffet,Matthias Kutscher,Martin Feuerstein. Владелец: CONSTELLIUM SINGEN GMBH. Дата публикации: 2017-01-03.

Vehicle body structure having detachable roof

Номер патента: US09527372B2. Автор: Takeshi Ishikawa,Ryo Suesada,Masaki Soda,Yuujiro Tashima. Владелец: Honda Motor Co Ltd. Дата публикации: 2016-12-27.

Micromechanical structure having a deformable membrane and a protection against strong deformations

Номер патента: US09470592B2. Автор: Sebastiano Brida. Владелец: Auxitrol SA. Дата публикации: 2016-10-18.

Diagonal draw bar structure having micro ventilation function

Номер патента: US09470023B2. Автор: Baokun Bai. Владелец: Guangdong Kinlong Hardware Products Co Ltd. Дата публикации: 2016-10-18.

Artificial turf structure having improved buffering performance

Номер патента: EP4424914A1. Автор: Kwang Su Cho,Ki Tae BAE,Hyun Joung JUN,Seung Min Han,Eun Seon JEONG,Se Jun HWANG,Hye In BANG. Владелец: Kolon Glotech Inc. Дата публикации: 2024-09-04.

Ceramic matrix composite structure having integral cooling passages and method of manufacture

Номер патента: EP1429917A2. Автор: Christian X. Campbell,Jay Morrison,Steven C. Butner,Harry A. Albrecht,Yevgeuiy Shteyman. Владелец: Siemens Westinghouse Power Corp. Дата публикации: 2004-06-23.

Ceramic matrix composite structure having integral cooling passages and method of manufacture

Номер патента: WO2003026887A2. Автор: Christian X. Campbell,Jay Morrison,Steven C. Butner,Harry A. Albrecht,Yevgeuiy Shteyman. Владелец: Siemens Westinghouse Power Corporation. Дата публикации: 2003-04-03.

Additive manufactured airframe structure having a plurality of reinforcement elements

Номер патента: AU2022421040A1. Автор: John F. Gundlach,Jacob S. Allen. Владелец: Rapidflight Holdings LLC. Дата публикации: 2024-06-27.

Surveillance equipment platform having a retractable telescoping structure that fully retracts within a vehicle and which has surveillance equipment mounted thereon, and sealing device mounted to the telescoping structure

Номер патента: US20230226986A1. Автор: Larry L. DAY,Mark J. Howell,Eric Schleppegrell,David Ausley. Владелец: Freedom Surveillance LLC. Дата публикации: 2023-07-20.

Pinnacle die structure having scrap collecting opening

Номер патента: WO2007064067A1. Автор: Sun-Hoo Park. Владелец: Kds Intech Co., Ltd.. Дата публикации: 2007-06-07.

Porous polymer structure having smooth surface, method for producing same, and protective film comprising same

Номер патента: US20240124675A1. Автор: Dong Rip Kim,Haeyeon LEE,Hanmin JANG,Sungwon JO. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-04-18.

Fibre cement plate and a wall structure having the fibre cement plates

Номер патента: AU2023222398A1. Автор: Mia Werner JENSEN,Carsten Borum POULSEN,Peter Hessellund Møller VIG. Владелец: Swisspearl Danmark Holding As. Дата публикации: 2024-08-01.

Package structure having photonic integrated circuit

Номер патента: US20240255697A1. Автор: Chih-Chung Hsu,Chih-Chung Wu,Chih-Wei Peng,Zuon-Min Chuang. Владелец: MOLEX LLC. Дата публикации: 2024-08-01.

Sound absorbing structure having one or more acoustic scatterers attached to or forming a vehicle structure

Номер патента: US11776521B2. Автор: Debasish Banerjee,Xiaoshi Su,Kai AIZAWA,Steven R. Sorenson. Владелец: Toyota Motor Engineering and Manufacturing North America Inc. Дата публикации: 2023-10-03.

Aerosol generator having a sandwich construction

Номер патента: US20230302232A1. Автор: Joachim Kern. Владелец: Nebu Tec Med Produkte Eike Kern GmbH. Дата публикации: 2023-09-28.

Elastic composite structure having low-density foam material and reinforcement structure, and anti-collision packing object including the same

Номер патента: US20220281670A1. Автор: Hsin-Yi Chang,You-Yu Jian. Владелец: Alpha Networks Inc. Дата публикации: 2022-09-08.

Ligating structure having greater stretchability, greater shelf life, and greater ligating characteristics and method of manufacture

Номер патента: WO1999047048A3. Автор: Eric L Mears. Владелец: EnSurg Inc. Дата публикации: 1999-11-18.

Ligating structure having greater stretchability, greater shelf life, and greater ligating characteristics and method of manufacture

Номер патента: EP1063922A2. Автор: Eric L. Mears. Владелец: EnSurg Inc. Дата публикации: 2001-01-03.

Ligating structure having greater stretchability, greater shelf life, and greater ligating characteristics and method of manufacture

Номер патента: WO1999047048A2. Автор: Eric L. Mears. Владелец: Ensurg, Inc.. Дата публикации: 1999-09-23.

Package structure having photonic integrated circuit

Номер патента: US20240319438A1. Автор: Chih-Chung Hsu,Chih-Chung Wu,Zuon-Min Chuang. Владелец: MOLEX LLC. Дата публикации: 2024-09-26.

Parts with a bainitic structure having high strength properties and manufacturing process

Номер патента: US12129527B2. Автор: Bernard Resiak,Ulrich Voll,Marie-Therese Perrot-Simonetta. Владелец: ArcelorMittal SA. Дата публикации: 2024-10-29.

Hanging structures having zome geometry

Номер патента: US09890554B2. Автор: Richard J. Duncan, Iii. Владелец: Individual. Дата публикации: 2018-02-13.

Structure having a wall equipped with an optical sensor measuring device surrounded by a flexible envelope closely attached to the wall, and method for installing the device

Номер патента: US12130188B2. Автор: Nicolas Dupe,Laetitia Mennebeuf. Владелец: AIRBUS OPERATIONS SAS. Дата публикации: 2024-10-29.

Synthetic polymer film whose surface has microbicidal activity, multilayer structure having synthetic polymer film, sterilization method with the use of surface of synthetic polymer film, method for reactivating surface of synthetic polymer film, mold for production of synthetic polymer film, and mold manufacturing method

Номер патента: US09781926B2. Автор: Kiyoshi Minoura,Seiji Takami,Takahiro Nakahara,Miho Yamada. Владелец: Sharp Corp. Дата публикации: 2017-10-10.

Backlight module having a prism structure

Номер патента: US09709722B2. Автор: Michael Lorne Purdy,Hsin Chin Lee,Choongho Lee. Владелец: BlackBerry Ltd. Дата публикации: 2017-07-18.

Optoelectronic structures having multi-level optical waveguides and methods of forming the structures

Номер патента: US09703036B2. Автор: Zhong-Xiang He,Steven M. Shank,Qizhi Liu,Ronald G. Meunier. Владелец: Globalfoundries Inc. Дата публикации: 2017-07-11.

Structures having cavities containing coupler portions

Номер патента: US09644476B2. Автор: John R. Lovell. Владелец: Schlumberger Technology Corp. Дата публикации: 2017-05-09.

Side shield fixing structure having pin-detachment guide member

Номер патента: US09568747B2. Автор: Seong Chan Kim,Hee Duk KIM. Владелец: Individual. Дата публикации: 2017-02-14.

Composite structure having a stabilizing element

Номер патента: US09517594B2. Автор: Marc R. Matsen,Mark A. Negley. Владелец: Boeing Co. Дата публикации: 2016-12-13.

Lighting structure having multi-functional support

Номер патента: US09500330B2. Автор: Jianqiao Yang. Владелец: Individual. Дата публикации: 2016-11-22.

System and method for slip forming monolithic reinforced composite concrete structures having multiple functionally discrete components

Номер патента: US09435085B1. Автор: Patrick Shawn Free,Eric C Kontos. Владелец: Raptor LLC. Дата публикации: 2016-09-06.

Modular wind turbine having a rotating feature and method of use thereof

Номер патента: US09328715B2. Автор: Karen Anne Pare,Philip Roger Pare. Владелец: KKR IP LLC. Дата публикации: 2016-05-03.

Golf Club Head Structures Having Split, Multi-Part Heads

Номер патента: US20140274462A1. Автор: Raymond J. Sander. Владелец: Nike Inc. Дата публикации: 2014-09-18.

Golf club head structures having split, multi-part heads

Номер патента: US20200114224A1. Автор: Raymond J. Sander. Владелец: Karsten Manufacturing Corp. Дата публикации: 2020-04-16.

Golf club head structures having split, multi-part heads

Номер патента: US20150335964A1. Автор: Raymond J. Sander. Владелец: Nike Inc. Дата публикации: 2015-11-26.

Pallet structure having preset shape for holding support

Номер патента: US20240278955A1. Автор: Ming-Yuan Wu. Владелец: Individual. Дата публикации: 2024-08-22.

Golf club head structures having split, multi-part heads

Номер патента: US12070662B2. Автор: Raymond J. Sander. Владелец: Karsten Manufacturing Corp. Дата публикации: 2024-08-27.

Airtight loose powder case structure having powder puff

Номер патента: US20240324748A1. Автор: Haiying Yang. Владелец: Shyahsin Packaging China Co Ltd. Дата публикации: 2024-10-03.

Golf club head structures having split, multi-part heads

Номер патента: US09849352B2. Автор: Raymond J. Sander. Владелец: Karsten Manufacturing Corp. Дата публикации: 2017-12-26.

Touch electrode structure and touch panel using the same

Номер патента: US09798431B2. Автор: Yau-Chen Jiang,Yanjun Xie,Xiaoxin Bai. Владелец: TPK Touch Solutions Xiamen Inc. Дата публикации: 2017-10-24.

Structure having fibres which are adhesively bonded to one another in locations

Номер патента: US09345808B2. Автор: Wolfgang Witt,Christoph Classen,Swen FRANZEN,Harrie VAN BAARS,Andreas Henseler,Frank Willems. Владелец: OCCLUTECH HOLDING AG. Дата публикации: 2016-05-24.

Low-loss electrode structures using resistive connections for optical modulation applications

Номер патента: US20020054417A1. Автор: Richard Blanchard,Ganesh Gopalakrishnan,Kevin Donovan. Владелец: Codeon Corp. Дата публикации: 2002-05-09.

Low-loss electrode structures using extended electrical connections for optical modulation applications

Номер патента: WO2003001283A1. Автор: Ganesh K. Gopalakrishnan,Richard C. Blanchard,Kevin G. Donovan. Владелец: Codeon Corporation. Дата публикации: 2003-01-03.

Golf club head structures having split, multi-part heads

Номер патента: EP2969070A1. Автор: Raymond J. Sander. Владелец: Nike Innovate CV USA. Дата публикации: 2016-01-20.

Multifunctional use of an electrode structure of a balloon catheter system

Номер патента: US12089954B2. Автор: Bodo Quint. Владелец: BIOTRONIK AG. Дата публикации: 2024-09-17.

Composite structures having reduced area radius fillers and methods of forming the same

Номер патента: US09592651B2. Автор: Lyle R. Deobald,Aaron N. Rinn,Madhavadas Ramnath,Kenneth H. Griess,Ying Shan,Derek P. Vetter,Michael J. Graves. Владелец: Boeing Co. Дата публикации: 2017-03-14.

Electrode structure for electrolyser cells

Номер патента: CA1171817A. Автор: Rodney L. Leroy,H. John Davis,Christopher T. Bowen. Владелец: Electrolyser Corp Ltd . Дата публикации: 1984-07-31.

Graphical user interface for association with an electrode structure deployed in contact with a tissue region

Номер патента: US09844406B2. Автор: John W. Gaiser,Scott H. West,Stuart D. Edwards,David S. Utley,Jay Qin,Peter H. Muller. Владелец: Mederi Therapeutics Inc. Дата публикации: 2017-12-19.

Micromechanical pressure sensor structure having a side wall layer

Номер патента: US09829405B2. Автор: Koichi Yoshida,Heikki Kuisma. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2017-11-28.

Hydrogenated polymers with radial structure having core based on calixarenes and use thereof in lubricant compositions

Номер патента: RU2672421C2. Автор: Клаудио КАВАЛЛО,Марчелло Нотари,Альберто РОСЕЛЛИ,Алессандро КАЗНАТИ,Франческо САНЗОНЕ,Алессандро БУРЛИНИ. Владелец: ВЕРСАЛИС С.п.А.. Дата публикации: 2018-11-14.

Folding electrode structures

Номер патента: US5871483A. Автор: David K. Swanson,Dorin Panescu,James G. Whayne,Jerome Jackson,Russell B. Thompson. Владелец: EP Technologies Inc. Дата публикации: 1999-02-16.

Three-piece swivel caster having a force transfer roller

Номер патента: US4509227A. Автор: James W. Keane. Владелец: Whirlpool Corp. Дата публикации: 1985-04-09.

Apparatus to convert a crib to a bed, and having a step

Номер патента: US4982464A. Автор: Jay M. Lucero. Владелец: Individual. Дата публикации: 1991-01-08.

Bullet having a negative Poisson’s ratio effect and a design method thereof

Номер патента: AU2019356040A1. Автор: Xiangyu Zhang,Shilong WANG,Xin Ren,Chuanzhen HAN. Владелец: NANJING TECH UNIVERSITY. Дата публикации: 2020-07-09.

Connection structure having dumbbell-shaped bidirectional tapered external thread and traditional thread having large left taper and small right taper

Номер патента: US20210010521A1. Автор: Yihua You. Владелец: Amicus Veritatis Machinery Co Ltd. Дата публикации: 2021-01-14.

Polymeric structures having a micro-void space and systems and methods for making same

Номер патента: WO2024086096A1. Автор: Joseph M. Desimone,Gabriel E. LIPKOWITZ,Ian A. COATES. Владелец: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY. Дата публикации: 2024-04-25.

Electrode structure, display panel, and electronic device

Номер патента: EP4145215A1. Автор: YANG Hu,Peng Jiang,Xiaoxiao Chen,Ning Zhu,Yuanhui Guo,Yun Li,Chuang CHEN,Jiantao Liu,Yujie Gao,Xia Shi. Владелец: Wuhan BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-03-08.

Electrode structure and method of manufacturing an electrode structure

Номер патента: WO2016202667A1. Автор: Gerald Urban,Can DINCER,Stephan Kasemann,Stefan Partel,Jochen Kieninger. Владелец: Fachhochschule Vorarlberg Gmbh. Дата публикации: 2016-12-22.

Method, system, and electrode structure for acquiring electrical signals from plurality of lead wires, and method for manufacturing said electrode structure

Номер патента: US20240192777A1. Автор: Masahiro Kasuya,Tatsuya Seki. Владелец: Meltin Mmi Co Ltd. Дата публикации: 2024-06-13.

Method, system, and electrode structure for acquiring electrical signals from plurality of lead wires, and method for manufacturing said electrode structure

Номер патента: EP4327744A1. Автор: Masahiro Kasuya,Tatsuya Seki. Владелец: Meltin Mmi Co Ltd. Дата публикации: 2024-02-28.

Electrochemical electrode structure, electrochemical cell, bipolar electrode assembly, electrochemical cell arrangement, and method of attaching an electrode element to a supportive element of an electrochemical electrode structure for an electrochemical cell

Номер патента: EP4446467A1. Автор: Masato Tanaka,Yukinori Iguchi,Tsuyoshi Hamada,Koji Kawanishi. Владелец: ThyssenKrupp Nucera AG and Co KGaA. Дата публикации: 2024-10-16.

Electrochemical electrode structure, electrochemical cell, and method of retrofitting a finite-gap electrochemical cell into a zero-gap type electrochemical cell

Номер патента: EP4446466A1. Автор: Masato Tanaka,Yukinori Iguchi,Tsuyoshi Hamada,Koji Kawanishi. Владелец: ThyssenKrupp Nucera AG and Co KGaA. Дата публикации: 2024-10-16.

Electrochemical electrode structure, electrochemical cell, bipolar electrode assembly, electrochemical cell arrangement, and method of attaching an electrode element to a supportive element of an electrochemical electrode structure for an electrochemical cell

Номер патента: WO2024213436A1. Автор: Masato Tanaka,Yukinori Iguchi,Tsuyoshi Hamada,Koji Kawanishi. Владелец: thyssenkrupp nucera AG & Co. KGaA. Дата публикации: 2024-10-17.

Electrochemical electrode structure, electrochemical cell, and method of retrofitting a finite-gap electrochemical cell into a zero-gap type electrochemical cell

Номер патента: WO2024213437A1. Автор: Masato Tanaka,Yukinori Iguchi,Tsuyoshi Hamada,Koji Kawanishi. Владелец: thyssenkrupp nucera AG & Co. KGaA. Дата публикации: 2024-10-17.

Touch electrode structure and display device

Номер патента: US12135856B2. Автор: Yuanyuan Li,Meizhu ZHENG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-11-05.

Unitary deflection member for making fibrous structures having increased surface area and process for making same

Номер патента: US9938666B2. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2018-04-10.

Architectural glass with low emission coating, having a multilayer structure, having a high strength, and / or way of its manufacture

Номер патента: RU2683727C2. Автор: Хасан ИСМАИЛ,Бирсел ДЕНИЗ. Владелец: Тюркийе Шише Ве Кам Фабрикалари А.Ш.. Дата публикации: 2019-04-01.

Toner supply roll including porous cylindrical polyurethane sponge structure having skin layer having openings and alternate protrusions and recesses, and method of producing the same

Номер патента: US6149564A. Автор: Keita Shiraki,Akitoshi Nozawa. Владелец: Sumitomo Riko Co Ltd. Дата публикации: 2000-11-21.

Nut structure having anchor pin blocking split sleeve against rotation in nut body

Номер патента: US5980176A. Автор: Robert Akashi. Владелец: Individual. Дата публикации: 1999-11-09.

Unitary deflection member for making fibrous structures having increased surface area and process for making same

Номер патента: CA2984619C. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2021-05-18.

Unitary deflection member for making fibrous structures having increased surface area and process for making same

Номер патента: CA2984617C. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2020-04-21.

Door frame structure having quick mounting hinge means

Номер патента: CA1115134A. Автор: Eugene F. Cecil (Deceased). Владелец: United States Gypsum Co. Дата публикации: 1981-12-29.

Mount for an optical structure having a grooved protruding member and method of mounting an optical structure using such mount

Номер патента: CA2769519C. Автор: Itai Vishnia,Zvi Bleier. Владелец: PLX Inc. Дата публикации: 2018-12-18.

Apparatus for use with structures having mounting flanges during final cure

Номер патента: GB2444153A. Автор: Ming Xie,Lee Alan Blanton,Curt Brian Curtis,Lori Renee McGrath,Paul Edward Wilkerson. Владелец: General Electric Co. Дата публикации: 2008-05-28.

Method of preparing foam using a partially fluorinated alkane having a tertiary structure as a blowing agent

Номер патента: US5130345A. Автор: Bernard Sukornick,Chien C. Li. Владелец: AlliedSignal Inc. Дата публикации: 1992-07-14.

Resin-impregnated belt having a texturized outer surface for application on papermaking machines

Номер патента: NZ501761A. Автор: William H Dutt. Владелец: Albany Int Corp. Дата публикации: 2001-09-28.

Seamless unitary deflection member for making fibrous structures having increased surface area

Номер патента: CA2989305C. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2020-08-11.

Fiber and a fiber structure having a high flame-retarding property and high moisture-absorptive property

Номер патента: US7696283B2. Автор: Ryosuke Nishida,Masao Ieno. Владелец: Japan Exlan Co Ltd. Дата публикации: 2010-04-13.

Amorphous silica particles having a double structure, process for producing the same and use

Номер патента: MY117802A. Автор: Masanori Tanaka,Yuuji Washio. Владелец: Mizusawa Industrial Chem. Дата публикации: 2004-08-30.

Products having a wood grain appearance, and methods and structures for use in forming same

Номер патента: US20200269462A1. Автор: William M. Vanderminden. Владелец: Telescope Casual Furniture Inc. Дата публикации: 2020-08-27.

Cleansing device having a nebulizer and a suction unit

Номер патента: US20240115025A1. Автор: Matthieu Jacob,Grégoire Charraud,Nicholas SINCLAIR,Dominic Akerele. Владелец: LOreal SA. Дата публикации: 2024-04-11.

Projecting lamp structure having light adjusting device

Номер патента: US20180313522A1. Автор: Chin-Hung Lin,Yuh-Sheng Lin,Che-Chun CHANG. Владелец: Arex(twn) International Co Ltd. Дата публикации: 2018-11-01.

Method for three-dimensional or multilayer weaving of a fibrous structure and fibrous structure having a three-dimensional or multilayer weave

Номер патента: US20240133084A1. Автор: Dominique Marie Christian Coupe,Célline KRIBS,Adrienne RETIVEAU-LECA. Владелец: Safran SA. Дата публикации: 2024-04-25.

Patient interface device with a frame assembly having a double-Y supporting structure

Номер патента: US11857727B2. Автор: Gregory John Jablonski. Владелец: Koninklijke Philips NV. Дата публикации: 2024-01-02.

Vehicle Seat Having a Foot and/or Calf Support

Номер патента: US20230356640A1. Автор: Michael Leng,Sylvia Kleindl. Владелец: Bayerische Motoren Werke AG. Дата публикации: 2023-11-09.

Fibrous network structure having excellent compression durability

Номер патента: US11970802B2. Автор: Teruyuki Taninaka,Shinichi Kobuchi,Hiroyuki Wakui. Владелец: Toyobo Co Ltd. Дата публикации: 2024-04-30.

Hybrid structure having suspension quality

Номер патента: US11981109B2. Автор: Ilan Ben Meir. Владелец: Tetro Ltd. Дата публикации: 2024-05-14.

Displacement amount monitoring electrode structure

Номер патента: US20140152325A1. Автор: Katsutoshi Narita. Владелец: Individual. Дата публикации: 2014-06-05.

Printing plates with printing structures having multiple elevations and, systems and process for manufacture, and methods for use of the same

Номер патента: EP4252075A1. Автор: Thomas Klein,Ben Ezra Barry,Pascal Thomas,Robert Bruce,Shahar Golan,Wolfgang Sievers. Владелец: Esko Graphics Imaging GmbH. Дата публикации: 2023-10-04.

Seat structure, particularly for bicycle, having a customizable shock absorbing element between the shell and the fork

Номер патента: WO2006120630A1. Автор: Stefano Segato. Владелец: Selle Royal S.p.A.. Дата публикации: 2006-11-16.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

Номер патента: US20220326578A1. Автор: Atsushi Tanaka,Takashi Sakairi,Keiichi Maeda,Hideki Kawaguchi,Kunihiko Hikichi,Kazuhiro Tamura,Toshiaki Okada,Tomoaki Honda,Tsuyoshi Okazaki,Takuya Fujino,Tadayuki Dofuku,Takayoshi Masaki,Yuuji Adachi,Koichi Amari,Takuma Matsuno,Chiho Araki,Katsunori Dai,Shunsuke Narui,Kouta Fukumoto,Yuu Kawaguchi,Seiya Haraguchi,Yosuke Takita. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-10-13.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

Номер патента: US11971633B2. Автор: Atsushi Tanaka,Takashi Sakairi,Keiichi Maeda,Hideki Kawaguchi,Kunihiko Hikichi,Kazuhiro Tamura,Toshiaki Okada,Tomoaki Honda,Tsuyoshi Okazaki,Takuya Fujino,Tadayuki Dofuku,Takayoshi Masaki,Yuuji Adachi,Koichi Amari,Takuma Matsuno,Chiho Araki,Katsunori Dai,Shunsuke Narui,Kouta Fukumoto,Yuu Kawaguchi,Seiya Haraguchi,Yosuke Takita. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-04-30.

Cleansing device having a nebulizer and a suction unit

Номер патента: EP4294234A1. Автор: Matthieu Jacob,Grégoire Charraud,Nicholas SINCLAIR,Dominic Akerele. Владелец: LOreal SA. Дата публикации: 2023-12-27.

Fan dynamic pressure structure having a plastic frame integrally formed around an oil-containing sintered metal powder bearing

Номер патента: EP3739228A1. Автор: Ping-Ling Wang. Владелец: F&p Precision Co Ltd. Дата публикации: 2020-11-18.

Electrode structure and device including the same

Номер патента: US20240231515A1. Автор: Jian Zhang,Jun Hua Huang,Si Qiang XU,Mei Fen BAI,Song Xin WANG,Long Yun Zhan,Wei Chuan Chao,Feng Ming Xue,Jin Shou Huang. Владелец: TPK Advanced Solutions Inc. Дата публикации: 2024-07-11.

Pixel electrode structure and liquid crystal display panel

Номер патента: US20180217451A1. Автор: Xiaohui Yao,Je Hao HSU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-08-02.

Pixel electrode structure and liquid crystal display panel

Номер патента: US10656475B2. Автор: Xiaohui Yao,Je Hao HSU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2020-05-19.

Electrode structure

Номер патента: US20240344907A1. Автор: Hiroshi Naitou,Takumi Yamada,Takateru Sawada. Владелец: Panasonic Automotive Systems Co Ltd. Дата публикации: 2024-10-17.

Touch panel and touch electrode structure thereof

Номер патента: US09977548B2. Автор: Yau-Chen Jiang,Bin Lai,Yanjun Xie. Владелец: TPK Touch Solutions Xiamen Inc. Дата публикации: 2018-05-22.

Method of reinforcement of span metal structure having a crack in weld seam

Номер патента: RU2700133C1. Автор: Сергей Александрович Бокарев,Андрей Михайлович Усольцев,Екатерина Германовна Попова,Александр Иванович Служаев,Михаил Юрьевич Маликов. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет путей сообщения" (СГУПС). Дата публикации: 2019-09-12.

Article of footwear including a bladder element having a cushioning component with a single central opening and method of manufacturing

Номер патента: US9775407B2. Автор: Pamela S. Greene. Владелец: Nike Inc. Дата публикации: 2017-10-03.

Method and apparatus for making absorbent structures having divided particulate zones

Номер патента: US5879751A. Автор: Michael Scott Bogdanski. Владелец: Procter and Gamble Co. Дата публикации: 1999-03-09.

Self-supported structures having active materials

Номер патента: RU2720940C1. Автор: Джон Ф. БРОДИ,Пол Дж. ТИНДАЛЛ,Брэдли ВУЛЕР,Франческо Дж. АЛЬТЕРА,И Ду. Владелец: Эксонмобил Апстрим Рисерч Компани. Дата публикации: 2020-05-14.

A papermaking belt having a permeable reinforcing structure

Номер патента: CA2798460C. Автор: Paul Dennis Trokhan,Dean Van Phan. Владелец: Procter and Gamble Co. Дата публикации: 2016-07-05.

Aircraft propulsion system having a translatable, directionable exhaust nozzle

Номер патента: US4456203A. Автор: John D. Louthan. Владелец: LTV Aerospace and Defense Co. Дата публикации: 1984-06-26.

Prefabricated metal overcast having a crushable lower section

Номер патента: US6129483A. Автор: Rudolph J. Juracko. Владелец: RAG American Coal Co LLC. Дата публикации: 2000-10-10.

Lamellar structure with lens-like effect creating structure having optical diffraction property

Номер патента: RU2317574C2. Автор: Уэйн Роберт ТОМПКИН,Андреас ШИЛЛИНГ. Владелец: Овд Кинеграм Аг. Дата публикации: 2008-02-20.

Fibrous structure having increased surface area and process for making same

Номер патента: CA2422772C. Автор: Paul Dennis Trokhan,David William Cabell. Владелец: Procter and Gamble Co. Дата публикации: 2007-09-18.

Weight optimized pressurizable aircraft fuselage structures having near elliptical cross sections

Номер патента: CA2628585C. Автор: Mithra M. K. V. Sankrithi,Kevin M. Retz. Владелец: Boeing Co. Дата публикации: 2011-04-12.

Method of making a floor mat having a channel

Номер патента: USRE36677E. Автор: Harold Reuben. Владелец: Collins and Aikman Accessory Mats Inc. Дата публикации: 2000-05-02.

Molding system for molding micro pattern structure having micro heating heating element and method for fabricating mold insert for molding micro pattern structure used therein

Номер патента: US20060073227A1. Автор: Shinill Kang. Владелец: Individual. Дата публикации: 2006-04-06.

Structure having liquid film on the surface thereof

Номер патента: CA2946822C. Автор: Shinya Iwamoto,Yosuke Akutsu. Владелец: Toyo Seikan Group Holdings Ltd. Дата публикации: 2019-02-26.

Silicic acid condensates having a low degree of crosslinking

Номер патента: CA2828759C. Автор: Thomas Gerber. Владелец: Individual. Дата публикации: 2021-01-19.

Model eye producing a speckle pattern having a reduced bright-to-dark ratio

Номер патента: CA2825710C. Автор: Richard James Copeland. Владелец: AMO Wavefront Sciences LLC. Дата публикации: 2019-03-12.

Folded core having a high compression modulus and articles made from the same

Номер патента: CA2730906C. Автор: Mikhail R. Levit,Rainer Kehrle,Yves Klett,Olivier Lengwiler. Владелец: EI Du Pont de Nemours and Co. Дата публикации: 2016-07-12.

Semiconductor test structure having a laser defined current carrying structure

Номер патента: US6553661B2. Автор: James Forster,Lester Wilson,Richard W. Arnold. Владелец: Texas Instruments Inc. Дата публикации: 2003-04-29.

Reinforced hose structure having a tough flexible cover

Номер патента: CA1209494A. Автор: Robert C. Schisler,George W. Eisenzimmer. Владелец: Goodyear Tire and Rubber Co. Дата публикации: 1986-08-12.

Immersion of an offshore weight-structure having two compartments

Номер патента: US4060995A. Автор: Roger Lacroix,Claude Lepere. Владелец: Sea Tank Co SA. Дата публикации: 1977-12-06.

Laminated structure having a renewable tacky surface

Номер патента: US3734816A. Автор: J Swasey. Владелец: Individual. Дата публикации: 1973-05-22.

Method of forming a tampon having a resilient member

Номер патента: US5755906A. Автор: Tammy Jo Balzar,Amy Michele Achter,Donald George Fox. Владелец: Kimberly Clark Worldwide Inc. Дата публикации: 1998-05-26.

Structure having liquid film on the surface thereof

Номер патента: CA2946822A1. Автор: Shinya Iwamoto,Yosuke Akutsu. Владелец: Toyo Seikan Group Holdings Ltd. Дата публикации: 2015-10-29.

Hair clip structure having a comb concealed therein

Номер патента: US5896862A. Автор: Huoy-Jen Hwang. Владелец: Individual. Дата публикации: 1999-04-27.

Method and apparatus for making absorbent structures having divided particulate zones

Номер патента: CA2240145C. Автор: Michael Scott Bogdanski. Владелец: Procter and Gamble Co. Дата публикации: 2003-11-25.

Electrode structure for resistance welding

Номер патента: CA2916450C. Автор: Yoshiaki Iwamoto,Shuhei SAEKI,Go TAMURA. Владелец: Dengensha Toa Co Ltd. Дата публикации: 2022-03-15.

Catheter with supporting structure having variable dimensions

Номер патента: AU2017276278A1. Автор: Steven Wu. Владелец: Biosense Webster Israel Ltd. Дата публикации: 2018-07-26.

Method of making a floor mat having a channel

Номер патента: US5620546A. Автор: Harold Reuben. Владелец: Akro Corp. Дата публикации: 1997-04-15.

Linear motion bearing with plate retaining structure having a plurality of pieces

Номер патента: WO2012009616A1. Автор: Alison Ng. Владелец: Thomson Industries, Inc.. Дата публикации: 2012-01-19.

Apparatus and method for testing electrode structure for thin display device using FET function

Номер патента: US20020121917A1. Автор: Shigeo Ueda,Takashi Doi,Shinichi Murakawa,Yoshio Egashira. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2002-09-05.

Structure having plural conductive regions and process for production thereof

Номер патента: WO2009148144A2. Автор: Makoto Takagi,Chienliu Chang,Atsushi Kandori. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2009-12-10.

Use of a fluid perfluoropolyether, having a very high viscosity, as a lubricant

Номер патента: CA1285549C. Автор: Mario Alfieri,Giovanni Zanini. Владелец: Ausimont SpA. Дата публикации: 1991-07-02.

Disposable absorbent structure having a surfactant treated intermediate layer

Номер патента: CA1124951A. Автор: John D. Roberts,Raymond L. Bendure. Владелец: Procter and Gamble Co. Дата публикации: 1982-06-08.

Unitary Deflection Member for Making Fibrous Structures Having Increased Surface Area and Process for Making Same

Номер патента: US20230313457A1. Автор: John Allen Manifold,John Leslie Brent, JR.,James Michael Singer. Владелец: Procter and Gamble Co. Дата публикации: 2023-10-05.

Grid structures having glueless sleeve joints and methods of manufacturing and using the same

Номер патента: US20230234325A1. Автор: Dan Wang,Bo Jin,Erik Kappel,Stephen W. Tsai,Antonio Miravete. Владелец: University of Southern California USC. Дата публикации: 2023-07-27.

Furniture and large-scale play structures having ideal modularity

Номер патента: US11896917B2. Автор: Abigail Sullivan,Christian W. Brown. Владелец: Pollywog Toys LLC. Дата публикации: 2024-02-13.

Structure having edge reinforcement on profiled rail

Номер патента: US11885117B2. Автор: Bernhard WINKLER,Peter Gstach,Jakob Kunz,Andrin NIGG,Philipp GROSSER,Daniele Casucci. Владелец: Hilti AG. Дата публикации: 2024-01-30.

Structure having movable center for child

Номер патента: AU2022302219A1. Автор: Wei Li. Владелец: Dongguan Jinwang Children Products Co ltd. Дата публикации: 2024-02-08.

Pivotal bone anchor assembly having a downwardly-displaceable snap-in-place insert and method of assembly

Номер патента: US20230329759A1. Автор: Roger P. Jackson. Владелец: Individual. Дата публикации: 2023-10-19.

A method for making three-dimensional structures having nanometric and micrometric dimensions

Номер патента: EP1398296B1. Автор: Piermario Repetto,Piero Perlo,Vito Lambertini. Владелец: Centro Ricerche Fiat SCpA. Дата публикации: 2007-08-15.

Method for generating features of a material; method for manufacturing a polarizer apparatus, polarizer apparatus, and display system having a polarizer apparatus

Номер патента: WO2019203796A1. Автор: Robert Jan Visser,Kevin Cunningham. Владелец: Applied Materials, Inc.. Дата публикации: 2019-10-24.

Impact resistant cladding construction material having a layered structure for use as a panel for floor, wall or roof

Номер патента: US20150275518A1. Автор: Jerry Flick. Владелец: Individual. Дата публикации: 2015-10-01.

Method for Ultrasonic Inspection of Structure Having Radiused Surface Using Multi-Centric Radius Focusing

Номер патента: US20210262985A1. Автор: Barry A. Fetzer,Jill P. Bingham. Владелец: Boeing Co. Дата публикации: 2021-08-26.

Pivotal bone anchor assembly having a downwardly-displaceable snap-in-place insert and method of assembly

Номер патента: US11957386B2. Автор: Roger P. Jackson. Владелец: Individual. Дата публикации: 2024-04-16.

Patient interface with a seal-forming structure having varying thickness

Номер патента: US20230355906A1. Автор: Matthew Eves,Lemmy Nga,Gerard Michael Rummery,Rupert Christian Scheiner. Владелец: ResMed Pty Ltd. Дата публикации: 2023-11-09.

Patient transport apparatus having a backup power system

Номер патента: WO2023205292A1. Автор: Anish Paul,Krishna Sandeep Bhimavarapu,Madhu Sandeep Thota. Владелец: STRYKER CORPORATION. Дата публикации: 2023-10-26.

Tool and method for bonding layers of a metallic axisymmetric structure having complex curvatures

Номер патента: US20170057004A1. Автор: Mark Alan Ramsey,Thomas Edward Sommer,David Dwain Rishel. Владелец: Rohr Inc. Дата публикации: 2017-03-02.

Tool and method for bonding layers of a metallic axisymmetric structure having complex curvatures

Номер патента: US20090199946A1. Автор: Mark Alan Ramsey,Thomas Edward Sommer,David Dwain Rishel. Владелец: Rohr Inc. Дата публикации: 2009-08-13.

Tool and method for bonding layers of a metallic axisymmetric structure having complex curvatures

Номер патента: US20140090773A1. Автор: Mark Alan Ramsey,Thomas Edward Sommer,David Dwain Rishel. Владелец: Rohr Inc. Дата публикации: 2014-04-03.

Tool and method for bonding layers of a metallic axisymmetric structure having complex curvatures

Номер патента: US9517528B2. Автор: Mark Alan Ramsey,Thomas Edward Sommer,David Dwain Rishel. Владелец: Rohr Inc. Дата публикации: 2016-12-13.

Seat structure, particularly for bicycle, having a customizable shock absorbing element between the shell and the fork

Номер патента: EP1883573A1. Автор: Stefano Segato. Владелец: Selle Royal SpA. Дата публикации: 2008-02-06.

Scintillator having a phase separation structure and radiation detector using the same

Номер патента: EP2739991A2. Автор: Toru Den,Yoshihiro Ohashi,Nobuhiro Yasui. Владелец: Canon Inc. Дата публикации: 2014-06-11.

Directly bonded metal structures having aluminum features and methods of preparing same

Номер патента: WO2024145033A1. Автор: Cyprian Emeka Uzoh,Bongsub LEE,Oliver Zhao. Владелец: Adeia Semiconductor Bonding Technologies Inc.. Дата публикации: 2024-07-04.

Touch electrode structure, touch panel and display device

Номер патента: US20240220057A1. Автор: Jun Yan,Zhiliang Jiang,Lingran WANG,Erjin ZHAO. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-07-04.

Electrode structure for touch panel and method of fabricating the same

Номер патента: US20170147099A1. Автор: Woo Hyun BAE,Myunsoo KIM,Changjun MAENG,In Ho RHA. Владелец: Dongwoo Fine Chem Co Ltd. Дата публикации: 2017-05-25.

Pixel electrode structure of display device

Номер патента: US20140327867A1. Автор: Moo Hyoung Song,Hoan Su Shim. Владелец: LG Display Co Ltd. Дата публикации: 2014-11-06.

Lc modulator devices based on non-uniform electrode structures

Номер патента: EP3183617A1. Автор: Tigran Galstian. Владелец: UNIVERSITE LAVAL. Дата публикации: 2017-06-28.

DOUBLE-LAYERED CAPACITIVE TOUCH PANEL AND METHOD FOR MANUFACTURING A DOUBLE-LAYERED CAPACITIVE TOUCH PANEL

Номер патента: US20130106752A1. Автор: Yu Chih-Chieh,CHU LINABEL,LIN JAO-CHING,CHANG RONG-SHUN. Владелец: SENTELIC TECHNOLOGY CO., LTD.. Дата публикации: 2013-05-02.

An integrated forming production for a double-layer bag for holding planar objects

Номер патента: TW394728B. Автор: Mei-Li Shie. Владелец: Shie Mei Li. Дата публикации: 2000-06-21.

A double layer coarse and fine outer filter for cutting liquid in metal cutting machine tools

Номер патента: GB201910964D0. Автор: . Владелец: Ningbo Xiche Mechanical Tech Co Ltd. Дата публикации: 2019-09-11.

A drain structure of a double-layer wash-basin

Номер патента: TW525644U. Автор: Wen-Cheng Wu. Владелец: Tai Chia Lin Entpr Co Ltd. Дата публикации: 2003-03-21.

A double-layer pipeline convenient to clean and a descaling device and a descaling method

Номер патента: ZA202005624B. Автор: WANG Haitao,CHEN Song. Владелец: Univ Anhui Jianzhu. Дата публикации: 2021-06-30.

A double layer storage box structure for SD memory card

Номер патента: TWM261486U. Автор: Yen-Jung Feng. Владелец: Cn J Technology Co Ltd. Дата публикации: 2005-04-11.

Box constructed of (unique manner of) folding board material with various perforations and openings on each face resulting (when folded) in a double-layer three-dimensional cubic form of many and various distinct uses

Номер патента: AU330263S. Автор: . Владелец: Nol Pty Ltd. Дата публикации: 2010-04-09.

METHOD FOR PREPARATION OF ARTIFICIAL BLOOD VESSEL USING TUBE-TYPE POROUS BIODEGRADABLE SCAFFOLD HAVING A DOUBLE-LAYERED STRUCTURE AND STEM CELL, AND ARTIFICIAL BLOOD VESSEL MADE BY THE SAME

Номер патента: US20120253456A1. Автор: KIM Dong-Hwa,SHIN Jung-Woog. Владелец: INJE UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION. Дата публикации: 2012-10-04.

REMOVABLE LABEL WITH A DOUBLE-LAYER ADHESIVE

Номер патента: US20120199274A1. Автор: . Владелец: UPM RAFLATAC OY. Дата публикации: 2012-08-09.

A METHOD FOR FORMING A BOLOMETER WORKING ELEMENT GAP BASED ON AN ULTRA SHORT BRIDGE FROM AN SUPERCONDUCTIVE NIOBIUM NITride (NBN) FILM WITH A DOUBLE LAYER OF NIOBIUM-ASOLITOUS (B) NANOZENIUM (B)

Номер патента: RU2013104965A. Автор: Григорий Наумович Гольцман,Олег Валерьевич Окунев,Борис Моисеевич Воронов,Наталья Сергеевна Каурова,Сергей Николаевич Масленников,Сергей Александрович Рябчун,Иван Васильевич Третьяков,Матвей Ильич Финкель. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский педагогический университет" (МПГУ). Дата публикации: 2014-08-20.

METHOD OF MAKING A DOUBLE-LAYER METAL OXYGEN ELECTRODE OF A FUEL ELEMENT WITH A SOLID ELECTROLYTE

Номер патента: SU225944A1. Автор: М.В. Перфильев. Владелец: Институт электрохимии Уральского филиала АН СССР. Дата публикации: 1999-07-10.

A double-layer hydraulic cylinder calibrating device

Номер патента: CN202994501U. Автор: 王爱国,喻宝林,于兆卿,孙远国,石学诚. Владелец: CFHI Dalian Design and Research Institute Co Ltd. Дата публикации: 2013-06-12.

Process of molding a double-layer sole, mold used and product directly obtained.

Номер патента: IT201900003578U1. Автор: Graziano Rogante. Владелец: Pu Ro S R L. Дата публикации: 2021-04-10.

A double-layer jelly stick package for easily sucking the jelly

Номер патента: CN104590771A. Автор: 卞海兵. Владелец: Individual. Дата публикации: 2015-05-06.

A double-layer rainwater drainage ditch and its construction method

Номер патента: ZA202213725B. Автор: Gao Xiaoping. Владелец: Gao Xiaoping. Дата публикации: 2023-03-29.

Filling device for a double-layer vacuum bag formed by vacuum assisted transfer molding and the method thereof

Номер патента: TW201103739A. Автор: zhi-yuan Zhang. Владелец: Univ Kao Yuan. Дата публикации: 2011-02-01.

Thermoelectric unit for check of thickness of layers of double-layer conducting materials

Номер патента: RU2233441C1. Автор: С.Ф. Корндорф,Т.И. Ногачева,Н.В. Углова. Владелец: Орловский государственный технический университет. Дата публикации: 2004-07-27.

Double-layer conducting strip injection molding structure for automobile gearbox

Номер патента: CN209963439U. Автор: 李旺,万侃侃,庄德水. Владелец: Hop Hing Automotive Electronics Ltd By Share Ltd. Дата публикации: 2020-01-17.

Double-layer conductive film electrical connecting structure for IGBT device

Номер патента: CN104867891A. Автор: 吴磊. Владелец: Xian Yongdian Electric Co Ltd. Дата публикации: 2015-08-26.

Thermoelectric method of control over thickness of layers of double-layer conductive materials

Номер патента: RU2217735C1. Автор: С.Ф. Корндорф,Т.И. Ногачева,Н.В. Углова. Владелец: Орловский государственный технический университет. Дата публикации: 2003-11-27.

ELECTRODE STRUCTURE, CAPACITOR, BATTERY, AND METHOD FOR MANUFACTURING ELECTRODE STRUCTURE

Номер патента: US20120003544A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

ANODE-SUPPORTED SOLID OXIDE FUEL CELL COMPRISING A NANOPOROUS LAYER HAVING A PORE GRADIENT STRUCTURE, AND A PRODUCTION METHOD THEREFOR

Номер патента: US20120003565A1. Автор: Lee Jong Ho,KIM Jong Cheol,LEE Hae-Weon,SON Ji-Won,KIM Hae-Ryoung,Noh Ho-Sung. Владелец: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2012-01-05.

Test Structure for Controlling the Incorporation of Semiconductor Alloys in Transistors Comprising High-K Metal Gate Electrode Structures

Номер патента: US20120001174A1. Автор: Kronholz Stephan,Wiatr Maciej,Giedigkeit Rainer. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

ELECTRODE STRUCTURE FOR PROTECTION OF STRUCTURAL BODIES

Номер патента: US20120000769A1. Автор: . Владелец: SIKA TECHNOLOGY AG. Дата публикации: 2012-01-05.

Semiconductor Device Comprising High-K Metal Gate Electrode Structures and Precision eFuses Formed in the Active Semiconductor Material

Номер патента: US20120001295A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

Humidity sensor chip having three-electrode structure

Номер патента: AU2020256373A1. Автор: Zhiliang Wang,Chuan Yin,Tianyu Shi,Changqing SONG,Haihong YIN,Chenyuan ZHAO. Владелец: Nantong University. Дата публикации: 2020-11-12.

Fluid-Permeable Body Having a Superhydrophobic Surface

Номер патента: US20120000848A1. Автор: MULLINS John,Lyons Alan M.,Schabel Michael J.. Владелец: LUCENT TECHNOLOGIES INC.. Дата публикации: 2012-01-05.

SURFACE-MOUNTABLE MAGNETIC FIELD SENSOR HAVING A SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A CIRCUIT BOARD HAVING A MAGNETIC FIELD SENSOR

Номер патента: US20120001627A1. Автор: STEGER Jürgen,Flock Stefan,Krella Uwe. Владелец: Conti Temic Microeletronic GMBH. Дата публикации: 2012-01-05.