SEMICONDUCTOR DEVICE HAVING FIN GATE, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME.

SEMICONDUCTOR DEVICE HAVING FIN GATE, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150048296A1
Опубликовано: 19-02-2015
Автор(ы): Nam Kyun PARK
Принадлежит: SK hynix Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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