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Memory device and memory system having the same

Номер патента: US09685218B2
Опубликовано: 20-06-2017
Автор(ы): Chul-woo Park, Jae-Youn Youn, Kwang-Il Park, Si-Hong Kim, Young-Soo Sohn
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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