Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US20240311011A1
Опубликовано: 19-09-2024
Автор(ы): Byungchul Jang, Eun Chu Oh, Joonsung Lim, Junyeong Seok, Younggul SONG
Принадлежит: SAMSUNG ELECTRONICS CO LTD
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Memory controller and storage device including the same

Номер патента: US11200000B2. Автор: Youngwook Kim,Dongeun Shin,Wansoo Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-14.

Memory controller and storage device including the same

Номер патента: US20210019087A1. Автор: Youngwook Kim,Dongeun Shin,Wansoo Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-21.

Nonvolatile memory and storage device including nonvolatile memory

Номер патента: US20180240522A1. Автор: Won-Taeck JUNG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-08-23.

Nonvolatile memory device and operation method thereof

Номер патента: US20190278487A1. Автор: Chankyung Kim,Uksong Kang,Youngjin Cho,JinHyeok Choi,Sungyong SEO,Sun-Young Lim,Duckhyun Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-12.

METHOD OF OPERATION FOR A NONVOLATILE MEMORY SYSTEM AND METHOD OF OPERATING A MEMORY CONTROLLER

Номер патента: US20180004417A1. Автор: PARK Young-ho,Park Chanik. Владелец: . Дата публикации: 2018-01-04.

METHOD OF OPERATION FOR A NONVOLATILE MEMORY SYSTEM AND METHOD OF OPERATING A MEMORY CONTROLLER

Номер патента: US20170160934A1. Автор: PARK Young-ho,Park Chanik. Владелец: . Дата публикации: 2017-06-08.

Data buffering operation of three-dimensional memory device with static random-access memory

Номер патента: US11922058B2. Автор: Yue Ping Li,Chun Yuan Hou,Wei Jun Wan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-05.

Memory system and operating method of the memory system inputting an additional read enable toggle signal to output status information of memory device

Номер патента: US11880599B2. Автор: Dae Sung Kim,Sung Ho Ahn,Jae Hyeong Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-01-23.

Correcting power loss in nand memory devices

Номер патента: US20190065108A1. Автор: Peter Sean Feeley,Kishore Kumar Muchherla,Sampath Ratnam,Michael G. Miller,Gary F. Besinga,Harish Singidi,Renan Padilla. Владелец: Individual. Дата публикации: 2019-02-28.

Memory controller and storage device including the same

Номер патента: KR102088944B1. Автор: 김의진,김홍석,남이현,선경문. Владелец: 주식회사 파두. Дата публикации: 2020-05-26.

Memory device, memory system including the memory device, and operating method of the memory system

Номер патента: US20200381054A1. Автор: Sung Ho Kim,Jong Han AHN,Seong Cheon YU. Владелец: SK hynix Inc. Дата публикации: 2020-12-03.

Storage device and method of operating of the storage device

Номер патента: US20210096773A1. Автор: Kyu Tae Park,Jin Yong Seong. Владелец: SK hynix Inc. Дата публикации: 2021-04-01.

Memory device, memory system having the same, and operating method thereof

Номер патента: US20180052638A1. Автор: Byoung Sung You. Владелец: SK hynix Inc. Дата публикации: 2018-02-22.

Method of operating a controller and a memory device related to recovering data

Номер патента: US20240185933A1. Автор: Tae Hun Park,Dong Hun Kwak,Hyun Seob SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-06-06.

Nonvolatile memory and storage device including nonvolatile memory

Номер патента: US20180240522A1. Автор: Won-Taeck JUNG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-08-23.

Memory controller and storage device having the same

Номер патента: US20200379682A1. Автор: Ho Chan MOON. Владелец: SK hynix Inc. Дата публикации: 2020-12-03.

Operation method of controller configured to control nonvolatile memory device and operation method of storage device

Номер патента: US12002519B2. Автор: Heewon Lee,Kwangwoo Lee,Yunjung LEE,Sangjin Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-04.

Memory controller, semiconductor memory system including the same, and method of driving the semiconductor memory system

Номер патента: US20190146871A1. Автор: Jung-Hyun Kwon,Seung-Gyu JEONG,Do-Sun HONG,Won-Gyu SHIN. Владелец: SK hynix Inc. Дата публикации: 2019-05-16.

Nand flash memory controller and storage apparatus applying the same

Номер патента: US20200075107A1. Автор: Shih-Fu Huang,Cheng-Yu Chen,Shu-Min Lin,Jo-Hua WU. Владелец: RayMX Microelectronics Corp. Дата публикации: 2020-03-05.

Data storage device and non-volatile memory control method, with security extension

Номер патента: US20200356284A1. Автор: Chih-Yu Lin,Hung-Ting Pan,Sung-Ling Hsu. Владелец: Silicon Motion Inc. Дата публикации: 2020-11-12.

Memory device, memory module including the memory device, and operating method of memory controller

Номер патента: US20230137339A1. Автор: Dohan Kim,Hoyoung Lee,Daejeong Kim,Insu Choi,Namhyung Kim,Deokho Seo,Taekyeong Ko. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-04.

Memory device including a processing circuit, memory controller controlling the memory device and memory system including the memory device

Номер патента: US20200356305A1. Автор: Wonjun Lee,Changhyun KIM,Seon Wook Kim. Владелец: SK hynix Inc. Дата публикации: 2020-11-12.

Memory controller and storage device including the same

Номер патента: US20220005535A1. Автор: Hongseok Kim,Youngnam Kim,Ilyong JUNG,EHyun NAM. Владелец: Fadu Inc. Дата публикации: 2022-01-06.

Nonvolatile memory device including a fast read page and a storage device including the same

Номер патента: US20210358542A1. Автор: Heewon Lee,Chanha KIM,Kangho Roh,Yunjung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-18.

Nonvolatile memory device and operation method of storage device including the nonvolatile memory device

Номер патента: US09990130B2. Автор: Donghun Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Nonvolatile memory device and operation method of storage device including the nonvolatile memory device

Номер патента: US20170315723A1. Автор: Donghun Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-02.

Memory device, memory system including memory device, and method of operating memory system

Номер патента: US20240004557A1. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2024-01-04.

Storage device and operating method thereof

Номер патента: US20230418511A1. Автор: Kyungduk Lee,Hyunjoon Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-28.

Memory controller and operating method thereof

Номер патента: US11803334B2. Автор: Hyun Sub KIM,Dong Sop LEE,Ie Ryung PARK,Sung Yeob Cho. Владелец: SK hynix Inc. Дата публикации: 2023-10-31.

Memory controller and operating method thereof

Номер патента: US20210064294A1. Автор: Hyun Sub KIM,Dong Sop LEE,Ie Ryung PARK,Sung Yeob Cho. Владелец: SK hynix Inc. Дата публикации: 2021-03-04.

Memory controller and operating method thereof

Номер патента: US12026400B2. Автор: Hyun Sub KIM,Dong Sop LEE,Ie Ryung PARK,Sung Yeob Cho. Владелец: SK hynix Inc. Дата публикации: 2024-07-02.

Storage device and operating method thereof

Номер патента: US20190391757A1. Автор: Jin Yong Seong,Jun Sang Lee. Владелец: SK hynix Inc. Дата публикации: 2019-12-26.

NAND FLASH MEMORY CONTROLLER AND STORAGE APPARATUS APPLYING THE SAME

Номер патента: US20200075107A1. Автор: HUANG SHIH-FU,CHEN Cheng-Yu,Lin Shu-Min,Wu Jo-Hua. Владелец: . Дата публикации: 2020-03-05.

Memory device, control method for the memory device, and controller

Номер патента: US09996278B2. Автор: Tatsuya Zettsu. Владелец: Toshiba Memory Corp. Дата публикации: 2018-06-12.

Operation method of system-on-chip configured to control memory device

Номер патента: EP3822797A2. Автор: Yongseob Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-19.

Operation method of system-on-chip configured to control memory device

Номер патента: US20210151084A1. Автор: Yongseob Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-20.

Operation method of system-on-chip configured to control memory device

Номер патента: EP3822797A3. Автор: Yongseob Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-30.

Memory controller and method of operating the memory controller

Номер патента: US20200379679A1. Автор: Young Chan Oh. Владелец: SK hynix Inc. Дата публикации: 2020-12-03.

Data Storage Device and Method for Operating Nonvolatile Memory

Номер патента: US20180365143A1. Автор: Ying-Chun Hung. Владелец: Silicon Motion Inc. Дата публикации: 2018-12-20.

Flash memory controller and method capable of transmitting multiple set-feature signals and macro settings to flash memory device

Номер патента: US20240004581A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-01-04.

Flash memory controller and method capable of using one set-feature signal as a macro execution signal to execute multiple set-feature operations for flash memory device

Номер патента: US12073085B2. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-08-27.

Method of measuring durability of nonvolatile memory device and method of performing wear-leveling in storage device using the same

Номер патента: US11928338B2. Автор: Sanghyun Choi,Kangho Roh,Hyunkyo Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-12.

Nonvolatile memory device and method of throttling temperature of nonvolatile memory device

Номер патента: US10445010B2. Автор: Sung-Won Jeong,Hee-Woong Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-10-15.

Storage device and operating method thereof

Номер патента: US20240281166A1. Автор: Jae Woong Jeong,In Bo Shim,Dal Gon KIM,Na Yeong Kim. Владелец: SK hynix Inc. Дата публикации: 2024-08-22.

Storage controller determining distribution type, method of operating the same, and method of operating storage device including the same

Номер патента: US11934701B2. Автор: Youngdeok SEO,Hyunkyo Oh,Woohyun Kang,Donghoo LIM,Hyuna Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

Method and memory system for legacy hosts

Номер патента: EP1952404A2. Автор: Carlos Gonzalez,Kevin M. Conley,Daniel C. Guterman,Yoram Cedar,Charles Schroter,Milton Lourenco Barrocas. Владелец: SanDisk Corp. Дата публикации: 2008-08-06.

Nonvolatile memory device including nonvolatile memory and resistance-time converter, and integrated circuit card including nonvolatile memory device

Номер патента: US09842645B2. Автор: Yoshikazu Katoh,Hiroyuki Tezuka. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-12-12.

Storage controller, storage device, and operation method of storage device

Номер патента: US11756599B2. Автор: Soon Suk Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

Storage controller, storage device, and operation method of storage device

Номер патента: US20230368825A1. Автор: Soon Suk Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-16.

Storage device and operating method thereof

Номер патента: US20190392907A1. Автор: Dong Hyun Kim,Jae Min Lee,Seung Il Kim,Yong Ho Kim,Seon Young Choi,Min Ho HER. Владелец: SK hynix Inc. Дата публикации: 2019-12-26.

Data arrangement method of flash memory, flash memory storage device and flash memory control circuit unit

Номер патента: US20210294737A1. Автор: Yan Zheng,ZHI Wang,Xiaoyang Zhang,Kai-Di Zhu. Владелец: Hefei Core Storage Electronic Ltd. Дата публикации: 2021-09-23.

Method of processing data based on erase operations of logical pages related to data compression rate of mapping table in data storage device

Номер патента: US10540276B2. Автор: Wen-Sheng Lin. Владелец: Silicon Motion Inc. Дата публикации: 2020-01-21.

Flash memory controller and method capable of using one set-feature signal as a macro execution signal to execute multiple set-feature operations for flash memory device

Номер патента: US20240004550A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-01-04.

Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes

Номер патента: US20230280939A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-09-07.

Flash memory controller and method capable of transmitting multiple set-feature signals and macro settings to flash memory device

Номер патента: US11914901B2. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-02-27.

Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes

Номер патента: US11972146B2. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-04-30.

Stacked memory devices, systems, and methods

Номер патента: US20240345737A1. Автор: Joe M. Jeddeloh. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-10-17.

Stacked memory devices, systems, and methods

Номер патента: US09990144B2. Автор: Joe M. Jeddeloh. Владелец: Micron Technology Inc. Дата публикации: 2018-06-05.

Nonvolatile memory device including nonvolatile memory and resistance-time converter, and integrated circuit card including nonvolatile memory device

Номер патента: US20170294227A1. Автор: Yoshikazu Katoh,Hiroyuki Tezuka. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-10-12.

Memory device, Memory system including the memory device and Method of operating the memory device

Номер патента: KR20220101502A. Автор: 김종욱. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2022-07-19.

Systems And Methods For Accessing Memory Devices Using Virtual Memory Ranks

Номер патента: US20220188019A1. Автор: Saravanan Sethuraman,Krishnaprasad H,Ramkumar Jayaraman,Diyanesh Babu Chinnakkonda Vidyapoornachary. Владелец: Intel Corp. Дата публикации: 2022-06-16.

Storage device and operating method thereof

Номер патента: US11922064B2. Автор: Soo Jin Kim,Seung Jin PARK. Владелец: SK hynix Inc. Дата публикации: 2024-03-05.

Data processing on memory controller

Номер патента: EP4224326A1. Автор: Sukalpa Biswas,Gurushankar Rajamani,Benjamin Steel Gelb,Amin Farmahini. Владелец: Google LLC. Дата публикации: 2023-08-09.

Storage device and operating method thereof

Номер патента: US11995343B2. Автор: Jae Woong Jeong,In Bo Shim,Dal Gon KIM,Na Yeong Kim. Владелец: SK hynix Inc. Дата публикации: 2024-05-28.

Data processing on memory controller

Номер патента: US20210311658A1. Автор: Sukalpa Biswas,Gurushankar Rajamani,Benjamin Steel Gelb,Amin Farmahini. Владелец: Google LLC. Дата публикации: 2021-10-07.

Data processing on memory controller

Номер патента: US20210223985A1. Автор: Sukalpa Biswas,Gurushankar Rajamani,Benjamin Steel Gelb,Amin Farmahini. Владелец: Google LLC. Дата публикации: 2021-07-22.

Data processing on memory controller

Номер патента: US20230161498A1. Автор: Sukalpa Biswas,Gurushankar Rajamani,Benjamin Steel Gelb,Amin Farmahini. Владелец: Google LLC. Дата публикации: 2023-05-25.

MEMORY CONTROLLER, SEMICONDUCTOR MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF DRIVING THE SEMICONDUCTOR MEMORY SYSTEM

Номер патента: US20190146871A1. Автор: JEONG Seung-Gyu,HONG Do-Sun,KWON Jung-Hyun,SHIN Won-Gyu. Владелец: . Дата публикации: 2019-05-16.

Memory systems including memory controllers that use status input pins to check memory operation statuses of memory devices

Номер патента: US20230152976A1. Автор: Suhyun KIM,Donggeun Lim,Seonghoon Woo,Taeeun Park,Yukyeong Kim,Yejin Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-18.

Memory systems including memory controllers that use status input pins to check memory operation statuses of memory devices

Номер патента: EP4187537A1. Автор: Suhyun KIM,Donggeun Lim,Seonghoon Woo,Taeeun Park,Yukyeong Kim,Yejin Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-31.

Memory device, storage device, and computing system including memory device and storage device

Номер патента: US20230376216A1. Автор: Seongsik Hwang,Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-23.

Storage device and operating method thereof

Номер патента: US20210118515A1. Автор: Dong Hyun Kim,Jae Min Lee,Seung Il Kim,Yong Ho Kim,Seon Young Choi,Min Ho HER. Владелец: SK hynix Inc. Дата публикации: 2021-04-22.

Storage device and operating method thereof

Номер патента: US20220269441A1. Автор: Kwang Su Kim. Владелец: SK hynix Inc. Дата публикации: 2022-08-25.

Memory device including one-time programmable block and operation method thereof

Номер патента: US20230153000A1. Автор: Sangyong Yoon,Sang-Wan Nam,Jae-Hoon Choi,Kookhyun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-18.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20210019087A1. Автор: KIM YOUNGWOOK,SHIN DONGEUN,Choi Wansoo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-01-21.

Memory controller and storage device including the same

Номер патента: KR102208497B1. Автор: 박상현,홍성길,김홍석,남이현,임하영. Владелец: 주식회사 파두. Дата публикации: 2021-01-27.

Memory storage device and electronic device including nonvolatile memory

Номер патента: US20220050593A1. Автор: Jung Hoon Kim,Seong Hun Kim,Hong Kug Kim,Won Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-17.

Storage device including write buffer memory and method of operating storage device

Номер патента: US20190369921A1. Автор: Youngjin Cho,Eun Chu Oh,Jin-Hyeok Choi,Younggeun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-05.

Memory device, memory system including the memory device, and method of operating the memory system

Номер патента: US20200133501A1. Автор: Hyun Woo Lee,Young Gyun Kim. Владелец: SK hynix Inc. Дата публикации: 2020-04-30.

Memory device, operation method of a memory device, and operation method of a memory controller

Номер патента: US20230305706A1. Автор: Taeyoung Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Method of operating memory device and method of operating memory system

Номер патента: US20180151218A1. Автор: Min-Su Kim,Sung-Joon Kim,So-Ra Park,Chang-Ho Yun,Hyun-Jung Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-31.

Phase change memory system, phase change memory device, and phase change memory device refresh method

Номер патента: US20210118500A1. Автор: Kwang Jin Lee,Yoon Sung SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-22.

Solid state drive devices and storage systems having the same

Номер патента: US20190384491A1. Автор: Ji-Woon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Data Storage Devices and Data Processing Methods

Номер патента: US20200075114A1. Автор: Wen-Sheng Lin. Владелец: Silicon Motion Inc. Дата публикации: 2020-03-05.

Method and apparatus for accessing flash memory device

Номер патента: CA3012236C. Автор: QIAO LI,Jun Xu,Liang Shi,Chun XUE,Dongfang SHAN,Yuangang WANG. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2021-02-16.

READ OPERATION METHOD OF NONVOLATILE MEMORY, MEMORY SYSTEM INCLUDING THE NONVOLATILE MEMORY, AND OPERATION METHOD OF THE MEMORY SYSTEM

Номер патента: US20180173432A1. Автор: HAN IL-SU. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-06-21.

Reduced peak self-refresh current in a memory device

Номер патента: US20200219557A1. Автор: Vijayakrishna J. Vankayala. Владелец: Micron Technology Inc. Дата публикации: 2020-07-09.

Multi-channel nonvolatile memory management

Номер патента: US20180356982A1. Автор: Kyu-Hyoun Kim,Kevin Mcilvain,Adam J. McPadden,Nandita A. Mitra. Владелец: International Business Machines Corp. Дата публикации: 2018-12-13.

Multi-channel nonvolatile memory power loss management

Номер патента: US20180356981A1. Автор: Kyu-Hyoun Kim,Kevin Mcilvain,Adam J. McPadden,Nandita A. Mitra. Владелец: International Business Machines Corp. Дата публикации: 2018-12-13.

Memory device, memory system including the memory device, and method of operating the memory system

Номер патента: US20200133501A1. Автор: Hyun Woo Lee,Young Gyun Kim. Владелец: SK hynix Inc. Дата публикации: 2020-04-30.

Memory device, memory controller and storage device including the same for repairing fail wordline

Номер патента: KR20220094990A. Автор: 김종화,석진민. Владелец: 삼성전자주식회사. Дата публикации: 2022-07-06.

Semiconductor memory device and operation method thereof

Номер патента: US20170344301A1. Автор: Reum Oh,Hak-soo Yu,Je Min RYU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-30.

Phase change memory system, phase change memory device, and phase change memory device refresh method

Номер патента: US11417395B2. Автор: Kwang Jin Lee,Yoon Sung SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-16.

Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence

Номер патента: US11935595B2. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-03-19.

FLASH MEMORY DEVICE, CONTROLLER, AND METHOD CAPABLE OF PERFORMING ACCESS OPERATION UPON DATA UNIT(s) OF MULTIPLE PLANES OF FLASH MEMORY DEVICE IN RESPONSE ONE SIMPLIFIED COMMAND SEQUENCE

Номер патента: US20230280929A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-09-07.

Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence

Номер патента: US11861212B2. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2024-01-02.

FLASH MEMORY DEVICE, CONTROLLER, AND METHOD CAPABLE OF PERFORMING ACCESS OPERATION UPON DATA UNIT(s) OF MULTIPLE PLANES OF FLASH MEMORY DEVICE IN RESPONSE ONE SIMPLIFIED COMMAND SEQUENCE

Номер патента: US20230268002A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-08-24.

NONVOLATILE MEMORY DEVICE AND OPERATION METHOD OF STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY DEVICE

Номер патента: US20170315723A1. Автор: Kwak DongHun. Владелец: . Дата публикации: 2017-11-02.

Nonvolatile memory device and operation method of storage device including the nonvolatile memory device

Номер патента: US20150331627A1. Автор: Donghun Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-11-19.

Memory module including memory devices, each to which unique id is assigned, and storage device including the same

Номер патента: EP4425495A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-04.

Memory module including memory devices, each to which unique id is assigned, and storage device including the same

Номер патента: US20240289058A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Memory controller, memory system having the same, and method of operating the same

Номер патента: US10860227B2. Автор: Yong Jin,Duck Hoi KOO,Jin Pyo Kim. Владелец: SK hynix Inc. Дата публикации: 2020-12-08.

Memory system and method of operating method thereof

Номер патента: US20220012181A1. Автор: Yeong Dong GIM. Владелец: SK hynix Inc. Дата публикации: 2022-01-13.

Memory device, memory system including memory device, and method of operating memory system

Номер патента: US20210182144A1. Автор: Tae Ho Lee,Byung Ryul Kim,Yong Hwan HONG,Dae Il Choi. Владелец: SK hynix Inc. Дата публикации: 2021-06-17.

System and method for polling the status of memory devices

Номер патента: US09910600B2. Автор: Matthew Stephens,Neil Buxton. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-06.

System including hierarchical memory modules having different types of integrated circuit memory devices

Номер патента: US11823757B2. Автор: Craig Hampel,Mark Horowitz. Владелец: RAMBUS INC. Дата публикации: 2023-11-21.

Nonvolatile memory device that stores data from completed write requests on a power abnormality

Номер патента: US09984746B2. Автор: Tatsunori Kanai,Yusuke Shirota,Tetsuro Kimura,Masaya Tarui,Shiyo Yoshimura. Владелец: Toshiba Memory Corp. Дата публикации: 2018-05-29.

Extended utilization area for a memory device

Номер патента: US20240168635A1. Автор: Jani Hyvonen,Kimmo J. Mylly,Yevgen Gyl,Jussi Hakkinen. Владелец: Memory Technologies LLC. Дата публикации: 2024-05-23.

Memory controller and storage device including the same

Номер патента: KR20200037642A. Автор: 강남욱. Владелец: 삼성전자주식회사. Дата публикации: 2020-04-09.

Control method of memory device and associated flash memory controller

Номер патента: US20240329871A1. Автор: Tsung-Chieh Yang. Владелец: Silicon Motion Inc. Дата публикации: 2024-10-03.

Memory controller and storage device including the same

Номер патента: US11507322B2. Автор: Chung Un NA. Владелец: SK hynix Inc. Дата публикации: 2022-11-22.

Memory controller and storage device including the same

Номер патента: US20240241669A1. Автор: Geon Woo KIM,Dae Hoon Jang,Jhu Yeong Jhin. Владелец: SK hynix Inc. Дата публикации: 2024-07-18.

Memory controller and storage device including the same

Номер патента: US20240012564A1. Автор: Jeen PARK. Владелец: SK hynix Inc. Дата публикации: 2024-01-11.

Memory controller and storage device including the same

Номер патента: US20220197561A1. Автор: Chung Un NA. Владелец: SK hynix Inc. Дата публикации: 2022-06-23.

Memory controller, flash memory system having the same, and flash memory control method

Номер патента: US20210064235A1. Автор: Kenichi TAKUBO. Владелец: TDK Corp. Дата публикации: 2021-03-04.

Methods for controlling data storage device, and associated flash memory controller

Номер патента: EP4014121A1. Автор: Hong-Jung Hsu. Владелец: Silicon Motion Inc. Дата публикации: 2022-06-22.

Host device, memory controller, and computing system including the same

Номер патента: US11880274B2. Автор: Jeong Hyun Kim,Sung Ju Yoo,Ji Hun Choi,Byong Woo Ryu. Владелец: SK hynix Inc. Дата публикации: 2024-01-23.

Memory controller and accessing system utilizing the same

Номер патента: US20140304458A1. Автор: Yu-Wei Chyan,Jiyun-Wei Lin. Владелец: Silicon Motion Inc. Дата публикации: 2014-10-09.

Methods for controlling data storage device, and associated flash memory controller

Номер патента: US20220137874A1. Автор: Hong-Jung Hsu. Владелец: Silicon Motion Inc. Дата публикации: 2022-05-05.

Memory device for supporting cache read operation, operating method thereof, and memory system including the same

Номер патента: US20220342817A1. Автор: Gwan Park,Jeong Gil CHOI. Владелец: SK hynix Inc. Дата публикации: 2022-10-27.

Memory device storing parity and memory system including the same

Номер патента: US20220130485A1. Автор: Dongmin Shin,Geunyeong YU,Youngjun Hwang,Hongrak Son,Bohwan Jun,Heeyoul KWAK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-28.

Memory device, memory module, and memory system

Номер патента: US09805802B2. Автор: Uk-Song KANG,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-31.

Memory controller and memory device including the same

Номер патента: US20230063804A1. Автор: Ho youn Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-02.

Memory controller and memory device including the same

Номер патента: US11789815B2. Автор: Ho youn Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Memory controller and storage device including the same

Номер патента: US20220005540A1. Автор: Sang Hyun Park,Hongseok Kim,EHyun NAM,Sunggil HONG,Hayoung LIM. Владелец: Fadu Inc. Дата публикации: 2022-01-06.

Memory device, memory device controlling method, and memory device manufacturing method

Номер патента: US20230004310A1. Автор: Atsushi Kondo,Ryo YONEZAWA. Владелец: Kioxia Corp. Дата публикации: 2023-01-05.

Method of operating a memory system having a meta data manager

Номер патента: US09891838B2. Автор: Sungyong SEO,Yeong-Jae WOO,Otae Bae,Hyun-Seung Jei. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-13.

Memory module, memory system including memory module, and method of operating the same

Номер патента: US20230063123A1. Автор: Sung Woo HYUN. Владелец: SK hynix Inc. Дата публикации: 2023-03-02.

Memory system and method for operating the same

Номер патента: US20190258577A1. Автор: Jong-Min Lee,Beom-Rae JEONG. Владелец: SK hynix Inc. Дата публикации: 2019-08-22.

Memory system for supporting a merge operation and method for operating the same

Номер патента: US10671538B2. Автор: Jong-Min Lee,Beom-Rae JEONG. Владелец: SK hynix Inc. Дата публикации: 2020-06-02.

Storage device and method of operating the same

Номер патента: EP3862843A1. Автор: Jungmin Seo,Minkyu Kim,Kibeen JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-11.

Storage device, method of operating storage device, computing system including storage device and host device for controlling storage device, and method of operating computing system

Номер патента: US20210049096A1. Автор: Seok Jun Lee. Владелец: SK hynix Inc. Дата публикации: 2021-02-18.

Memory system and method of operating the same

Номер патента: US20230333763A1. Автор: Jeong Su Park,In Mo KWAK. Владелец: SK hynix Inc. Дата публикации: 2023-10-19.

Storage device and an operating method of a storage controller

Номер патента: US20240264766A1. Автор: Sang Hoon YOO,Wan-soo Choi,Young Ick CHO,Young Sun YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

A storage device and an operating method of a storage controller

Номер патента: EP4414852A1. Автор: Sang Hoon YOO,Wan-soo Choi,Young Ick CHO,Young Sun YOUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-14.

Memory controller communicating with host, operating method thereof, and computing system including the same

Номер патента: US09864704B2. Автор: Hyun Ju Lee,Jae Han Park,Dae Geun JEE. Владелец: SK hynix Inc. Дата публикации: 2018-01-09.

Storage device for performing dump operation, method of operating storage device, computing system including storage device and host device for controlling storage device, and method of operating computing system

Номер патента: US11455249B2. Автор: Seok Jun Lee. Владелец: SK hynix Inc. Дата публикации: 2022-09-27.

Storage device and method of operating the same

Номер патента: US20210247916A1. Автор: Jungmin Seo,Minkyu Kim,Kibeen JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-12.

Computing system including memory device and storage device and operating method thereof

Номер патента: EP4276639A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-15.

Method for performing access management in a memory device, associated memory device and controller thereof, and associated electronic device

Номер патента: US12038849B2. Автор: Jie-Hao LEE,Cheng-Yu Yu. Владелец: Silicon Motion Inc. Дата публикации: 2024-07-16.

Semiconductor memory device and operating method of the semiconductor memory device

Номер патента: US20240118813A1. Автор: Dong Uk Lee,Hae Chang Yang,Hun Wook LEE. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Storage device, computer system, and operation method of storage device

Номер патента: US20190303289A1. Автор: Daisuke Iwai,Kenichiro Yoshii,Tetsuya Sunata. Владелец: Toshiba Memory Corp. Дата публикации: 2019-10-03.

Host timeout avoidance in a memory device

Номер патента: US20200004459A1. Автор: David Aaron Palmer,Nadav Grosz. Владелец: Individual. Дата публикации: 2020-01-02.

Memory controller for managing data and error information

Номер патента: WO2023055539A1. Автор: Daniele Balluchi,Emanuele Confalonieri,Danilo Caraccio,Marco Sforzin,Paolo Amato. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2023-04-06.

Memory controller and operating method thereof

Номер патента: US20200310664A1. Автор: Sung Yeob Cho,Jeong Hyun Yoon. Владелец: SK hynix Inc. Дата публикации: 2020-10-01.

Memory system and method of operating the same

Номер патента: US20190155514A1. Автор: Byeong Gyu Park,Young Ick CHO. Владелец: SK hynix Inc. Дата публикации: 2019-05-23.

Information processing apparatus equipped with storage using flash memory, control method therefor, and storage medium

Номер патента: US20200333967A1. Автор: Tatsuya Ogawa. Владелец: Canon Inc. Дата публикации: 2020-10-22.

METHOD OF OPERATING MEMORY CONTROLLER, DATA STORAGE DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM INCLUDING THE SAME

Номер патента: US20160274802A1. Автор: DOH In Hwan,Kang Nam Wook,Koo Bum Hoe. Владелец: . Дата публикации: 2016-09-22.

Flash memory controller that can quickly enter power saving mode after entering idle state, associated flash memory device, and associated control method

Номер патента: US20240176517A1. Автор: Wen-Sheng Lin. Владелец: Silicon Motion Inc. Дата публикации: 2024-05-30.

Virtual partition management in a memory device

Номер патента: US20200371719A1. Автор: Pasquale Cimmino,Francesco Falanga,Massimo Iaculo,Angelo Della Monica,Eric Kwok Fung Yuen. Владелец: Micron Technology Inc. Дата публикации: 2020-11-26.

Memory device and read processing method

Номер патента: US20180067650A1. Автор: Takumi Watanabe,Hideki Hayakawa. Владелец: Toshiba Memory Corp. Дата публикации: 2018-03-08.

Interrupt signaling for a memory device

Номер патента: WO2021126656A1. Автор: Heinz Hoenigschmid,Thomas Hein,Markus Balb. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-06-24.

Memory controller

Номер патента: US20230289064A1. Автор: Tetsuro Takizawa. Владелец: Mirise Technologies Corp. Дата публикации: 2023-09-14.

Interrupt signaling for a memory device

Номер патента: US12099746B2. Автор: Heinz Hoenigschmid,Thomas Hein,Markus Balb. Владелец: Micron Technology Inc. Дата публикации: 2024-09-24.

Memory controller

Номер патента: US12073087B2. Автор: Tetsuro Takizawa. Владелец: Mirise Technologies Corp. Дата публикации: 2024-08-27.

Power loss protection of data in memory devices

Номер патента: US11747994B2. Автор: Yi-Min Lin,Chih-kuo Kao. Владелец: Micron Technology Inc. Дата публикации: 2023-09-05.

Memory system and method for controlling nonvolatile memory

Номер патента: US11861218B2. Автор: Hiroshi Nishimura,Hideki Yoshida,Naoki Esaka,Shinichi Kanno. Владелец: Kioxia Corp. Дата публикации: 2024-01-02.

Memory system and method for controlling nonvolatile memory

Номер патента: US20240061610A1. Автор: Hiroshi Nishimura,Hideki Yoshida,Naoki Esaka,Shinichi Kanno. Владелец: Kioxia Corp. Дата публикации: 2024-02-22.

Memory controller and operation method thereof, memory system and electronic device

Номер патента: US20240160369A1. Автор: Youxin He,Huadong HUANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Method of accessing storage device including nonvolatile memory device and controller

Номер патента: US20170308464A1. Автор: JooYoung HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-26.

Memory system and method for controlling the same

Номер патента: US20240069723A1. Автор: Hiromi Hoshino,Yoko Masuo. Владелец: Kioxia Corp. Дата публикации: 2024-02-29.

Host adaptive memory device optimization

Номер патента: US20210141570A1. Автор: David Aaron Palmer,Nadav Grosz. Владелец: Micron Technology Inc. Дата публикации: 2021-05-13.

Method of managing free space in nonvolatile memory, access device for recording data in information recording device including nonvolatile memory, information recording device, and information recording system

Номер патента: JPWO2018186455A1. Автор: 卓治 前田,前田　卓治. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2019-12-26.

Operating method of memory device for managing map data of each of plurality of storage devices, computing system including memory device, and operating method of computing system

Номер патента: US20230359394A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Address collision avoidance in a memory device

Номер патента: US20170075823A1. Автор: Robert E. Ward,Brian Lessard. Владелец: Avago Technologies General IP Singapore Pte Ltd. Дата публикации: 2017-03-16.

Method for performing access management in a memory device, associated memory device and controller thereof, and associated electronic device

Номер патента: US20230342302A1. Автор: Jie-Hao LEE,Cheng-Yu Yu. Владелец: Silicon Motion Inc. Дата публикации: 2023-10-26.

Apparatus and method of detecting potential security violations of direct access non-volatile memory device

Номер патента: US20200327258A1. Автор: Ariel Navon,Shay Benisty,Alon Marcu. Владелец: Western Digital Technologies Inc. Дата публикации: 2020-10-15.

Memory device, storage device, and computing system including memory device and storage device

Номер патента: EP4283456A1. Автор: Seongsik Hwang,Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-29.

FLASH MEMORY DEVICE, CONTROLLER, AND METHOD CAPABLE OF PERFORMING ACCESS OPERATION UPON DATA UNIT(s) OF MULTIPLE PLANES OF FLASH MEMORY DEVICE IN RESPONSE ONE SIMPLIFIED COMMAND SEQUENCE

Номер патента: US20230266922A1. Автор: Tsu-Han Lu,Hsiao-Chang YEN. Владелец: Silicon Motion Inc. Дата публикации: 2023-08-24.

Host timeout avoidance in a memory device

Номер патента: US20210124530A1. Автор: David Aaron Palmer,Nadav Grosz. Владелец: Micron Technology Inc. Дата публикации: 2021-04-29.

Memory controller for a high capacity memory circuit using virtual bank addressing

Номер патента: US20240045594A1. Автор: Shay FUX,Sagie GOLDENBERG,Shahar Sandor. Владелец: Sunrise Memory Corp. Дата публикации: 2024-02-08.

Semiconductor memory device and electronic system the same

Номер патента: US20210019076A1. Автор: SangSoo Ko,Byeoungsu Kim,SangHyuck HA,Jaegon Kim,Kyoungyoung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-21.

Address verification for a memory device

Номер патента: WO2021126457A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-06-24.

Cluster namespace for a memory device

Номер патента: US20240231610A9. Автор: Marco Redaelli,Gaurav Sinha. Владелец: Micron Technology Inc. Дата публикации: 2024-07-11.

Allocating variable media types of memory devices in a memory system

Номер патента: US20190332290A1. Автор: Michael B. Danielson,Paul A. Suhler,James H. Meeker. Владелец: Micron Technology Inc. Дата публикации: 2019-10-31.

Allocating variable media types of memory devices in a memory system

Номер патента: US20210173574A1. Автор: Michael B. Danielson,Paul A. Suhler,James H. Meeker. Владелец: Micron Technology Inc. Дата публикации: 2021-06-10.

MEMORY CONTROLLER, FLASH MEMORY SYSTEM HAVING THE SAME, AND FLASH MEMORY CONTROL METHOD

Номер патента: US20210064235A1. Автор: TAKUBO Kenichi. Владелец: . Дата публикации: 2021-03-04.

AVAILABLE-SPACE MANAGEMENT METHOD FOR NONVOLATILE MEMORY, ACCESS DEVICE WHICH STORES DATA TO INFORMATION STORAGE DEVICE WITH NONVOLATILE MEMORY, INFORMATION STORAGE DEVICE, AND INFORMATION STORAGE SYSTEM

Номер патента: US20190354306A1. Автор: Maeda Takuji. Владелец: . Дата публикации: 2019-11-21.

Metadata registers for a memory device

Номер патента: US20240126438A1. Автор: Jungwon Suh,Subbarao Palacharla,Olivier Alavoine,Michael Hawjing Lo,Pankaj Sharadchandra Deshmukh. Владелец: Qualcomm Inc. Дата публикации: 2024-04-18.

Metadata registers for a memory device

Номер патента: WO2024086414A1. Автор: Jungwon Suh,Subbarao Palacharla,Olivier Alavoine,Pankaj Deshmukh,Michael Hawjing Lo. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2024-04-25.

MEMORY CONTROLLER AND ACCESSING SYSTEM UTILIZING THE SAME

Номер патента: US20180074953A1. Автор: LIN Jiyun-Wei,CHYAN Yu-Wei. Владелец: . Дата публикации: 2018-03-15.

Memory controller and storage device including the same

Номер патента: US20210141559A1. Автор: Hongseok Kim,Yeong-Jae WOO,Jin-Yong Choi,EHyun NAM. Владелец: Fadu Inc. Дата публикации: 2021-05-13.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20190138233A1. Автор: Mun Kui-Yon,KIM Young-Wook,Choi Wan-soo. Владелец: . Дата публикации: 2019-05-09.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20170277446A1. Автор: CHEONG WOO SEONG. Владелец: . Дата публикации: 2017-09-28.

MEMORY CONTROLLER AND STORAGE DEVICE HAVING THE SAME

Номер патента: US20200379682A1. Автор: MOON Ho Chan. Владелец: . Дата публикации: 2020-12-03.

Memory controller and storage device including the same

Номер патента: KR102343600B1. Автор: 김홍석,남이현,우영재. Владелец: 주식회사 파두. Дата публикации: 2021-12-27.

Memory controller and storage device including the same

Номер патента: KR102343599B1. Автор: 김홍석,남이현,우영재. Владелец: 주식회사 파두. Дата публикации: 2021-12-27.

Memory controller and storage device comprising the same

Номер патента: KR102532206B1. Автор: 김영욱,문귀연,최완수. Владелец: 삼성전자 주식회사. Дата публикации: 2023-05-12.

Method of searching read voltage of nonvolatile memory device using regression analysis and method of reading data from nonvolatile memory device using the same

Номер патента: US11961553B2. Автор: Wijik LEE,Kwanwoo NOH,Hyeonjong Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

Memory module and method of operating the same

Номер патента: US20240272800A1. Автор: Sung Woo HYUN. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Computing system including memory device and storage device and operating method thereof

Номер патента: US20230359566A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Memory controller with a preprocessor

Номер патента: US20240020058A1. Автор: Ygal Arbel,Martin Newman,Arul CHINNAPPAN. Владелец: Xilinx Inc. Дата публикации: 2024-01-18.

MEMORY DEVICE INCLUDING A PROCESSING CIRCUIT, MEMORY CONTROLLER CONTROLLING THE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE

Номер патента: US20200356305A1. Автор: Kim Seon Wook,Lee Wonjun,Kim Changhyun. Владелец: . Дата публикации: 2020-11-12.

Conversion of access data based on memory device size

Номер патента: US20240086067A1. Автор: Mow Yiak Goh,Mark Clouse. Владелец: Micron Technology Inc. Дата публикации: 2024-03-14.

Memory module including memory devices to which unit id is assigned and storage device including the same

Номер патента: US20240345944A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Memory module including memory devices to which unit id is assigned and storage device including the same

Номер патента: EP4459620A1. Автор: Taeyoung Oh,Ki-Heung Kim,Jinseong Yun,Hyongryol Hwang,Taekwoon Kim,Yoonjae Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-06.

Nonvolatile memory module, memory system including nonvolatile memory module, and controlling method of nonvolatile memory module

Номер патента: US20150279475A1. Автор: Wonseok Lee,Youngkug Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-01.

Semiconductor memory device for guaranteeing reliability of data transmission and semiconductor system including the same

Номер патента: US20120014205A1. Автор: Mun-Phil Park. Владелец: Individual. Дата публикации: 2012-01-19.

Semiconductor memory device for guaranteeing reliability of data transmission and semiconductor system including the same

Номер патента: US8050136B2. Автор: Mun-Phil Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-11-01.

Semiconductor memory device for guaranteeing reliablity of data transmission and semiconductor system including the same

Номер патента: US20120014204A1. Автор: Mun-Phil Park. Владелец: Individual. Дата публикации: 2012-01-19.

System and method of command based and current limit controlled memory device power up

Номер патента: US9305609B2. Автор: Jeff Yu,Ted Pekny. Владелец: Micron Technology Inc. Дата публикации: 2016-04-05.

Memory devices, modules and systems having memory devices with varying physical dimensions, memory formats, and operational capabilities

Номер патента: EP3899736A1. Автор: Thomas H. Kinsley,Gregory A. King,George E. Pax,Chan H. Yoo,Randon K. Richards,Timothy M. Hollis,Eric J. Stave,Yogesh Sharma. Владелец: Micron Technology Inc. Дата публикации: 2021-10-27.

Memory devices, modules and systems having memory devices with varying physical dimensions, memory formats, and operational capabilities

Номер патента: US20240111707A1. Автор: Thomas H. Kinsley,Gregory A. King,George E. Pax,Chan H. Yoo,Randon K. Richards,Timothy M. Hollis,Eric J. Stave,Yogesh Sharma. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-04-04.

Memory devices, modules and systems having memory devices with varying physical dimensions, memory formats, and operational capabilities

Номер патента: US11789890B2. Автор: Thomas H. Kinsley,Gregory A. King,George E. Pax,Chan H. Yoo,Randon K. Richards,Timothy M. Hollis,Eric J. Stave,Yogesh Sharma. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-10-17.

Semiconductor memory device and memory system

Номер патента: US20240321360A1. Автор: Masaru Koyanagi,Yasuhiro HIRASHIMA. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

Memory system and method of operating the same

Номер патента: US20190103169A1. Автор: Dong Uk Lee,Jae Hyuk BANG. Владелец: SK hynix Inc. Дата публикации: 2019-04-04.

MEMORY DEVICE FOR GENERATING DATA STROBE SIGNAL BASED ON PULSE AMPLITUDE MODULATION, MEMORY CONTROLLER, AND MEMORY SYSTEM INCLUDING THE SAME

Номер патента: US20220068332A1. Автор: Choi Junghwan,PARK JaeWoo,SON Younghoon,CHOI Youngdon,Lee Sucheol. Владелец: . Дата публикации: 2022-03-03.

MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE

Номер патента: US20190304557A1. Автор: Kim Yong Ho,Lee Jae Min,CHOI SEON YOUNG,Her Min Ho,Kim Seung Il. Владелец: SK HYNIX INC.. Дата публикации: 2019-10-03.

method of controlling data writing in non volatile memory device and memory controller having wearleveling control function

Номер патента: KR102003930B1. Автор: 이원석,김택성,문영국. Владелец: 삼성전자주식회사. Дата публикации: 2019-07-25.

Memory device storing parity and memory system including the same

Номер патента: EP3989070B1. Автор: Dongmin Shin,Geunyeong YU,Youngjun Hwang,Hongrak Son,Bohwan Jun,Heeyoul KWAK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-27.

Method of operating memory device assuring reliability and memory system

Номер патента: US9159441B2. Автор: Jun Hee Kim,Hyun Sik Yun,Youn Won PARK,Hee Tai OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-13.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20220005535A1. Автор: KIM Youngnam,JUNG Ilyong,KIM Hongseok,NAM EHyun. Владелец: FADU Inc.. Дата публикации: 2022-01-06.

Storage device and operating method of storage device

Номер патента: US20240345758A1. Автор: Minji Kim,Jinwoo Park,Sangwon Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-17.

Swap memory device providing data and data block, method of operating the same, and method of operating electronic device including the same

Номер патента: US20240152461A1. Автор: Jiwon Lee,Jeonghoon CHOI,Won Woo Ro,Hyoseong Choi. Владелец: University Industry Foundation UIF of Yonsei University. Дата публикации: 2024-05-09.

Method of operating a memory device

Номер патента: US09971549B2. Автор: In-su Choi,Yong-Jun Yu,Doo-Hwan Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-15.

Storage control system with data management mechanism of parity and method of operation thereof

Номер патента: WO2014085702A1. Автор: Robert W. Ellis,Ryan Jones. Владелец: SMART Storage Systems, Inc.. Дата публикации: 2014-06-05.

Nonvolatile memory module and operating method for the same

Номер патента: US20170277464A1. Автор: Hyunju YOON. Владелец: SK hynix Inc. Дата публикации: 2017-09-28.

Data storage device and data storage system

Номер патента: US12067235B2. Автор: Chen-Hao Chen. Владелец: Silicon Motion Inc. Дата публикации: 2024-08-20.

Storage device and operating method thereof

Номер патента: US20240248643A1. Автор: Suhyun KIM,Hyunsook Lee,Seonghoon Woo,Tae-Eun Park,Haejong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-25.

Method and apparatus for transferring binary image into memory device

Номер патента: US20170031629A1. Автор: Shinichi Iwamoto,Takayoshi Nakamoto,Taku Yokawa,Mutsuo Tanabe,Takafumi NARITA,Takeshi IGASAKI. Владелец: Denso Ten Ltd. Дата публикации: 2017-02-02.

MEMORY DEVICE, MEMORY CONTROLLER, AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20190171378A1. Автор: KIM In-Su,KIM Jong-Min,NAM Sang-wook,KIM Jin-seok. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-06-06.

NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY CONTROL DEVICE, AND NON-VOLATILE MEMORY CONTROL METHOD

Номер патента: US20190339895A1. Автор: NAKAJIMA Daisuke,Nishiura Toshifumi,Yamazoe Hiroaki,NAGASHIMA KAN. Владелец: . Дата публикации: 2019-11-07.

Non-volatile memory devices, non-volatile memory control devices, and non-volatile memory control methods

Номер патента: TWI605458B. Автор: Hiroaki Yamazoe,Daisuke Nakajima,Toshifumi Nishiura,Kan Nagashima. Владелец: Sony Corp. Дата публикации: 2017-11-11.

Apparatus and method for sanitizing a shared memory device or a memory expander

Номер патента: US20240231615A1. Автор: Jung Min Choi,Sun Woong Kim,Min Ho Ha,Byung Il Koh. Владелец: SK hynix Inc. Дата публикации: 2024-07-11.

Method and system for efficient common processing in memory device controllers

Номер патента: US20170115887A1. Автор: Sandeep Sharma,Kenneth Alan Okin,Ashish Singhai,Sriram Rupanagunta,Rajendra Prasad Mishra,George Moussa,Krishanth Skandakumaran,Srikant SADASIVAM. Владелец: Western Digital Technologies Inc. Дата публикации: 2017-04-27.

Method and system for efficient common processing in memory device controllers

Номер патента: US09886196B2. Автор: Sandeep Sharma,Kenneth Alan Okin,Ashish Singhai,Sriram Rupanagunta,Rajendra Prasad Mishra,George Moussa,Krishanth Skandakumaran,Srikant SADASIVAM. Владелец: Western Digital Technologies Inc. Дата публикации: 2018-02-06.

Memory controller and accessing system utilizing the same

Номер патента: US20140380000A1. Автор: Yu-Wei Chyan,Jiyun-Wei Lin. Владелец: Silicon Motion Inc. Дата публикации: 2014-12-25.

Data read method, and flash memory controller and storage system using the same

Номер патента: TW201111985A. Автор: Chih-Kang Yeh. Владелец: Phison Electronics Corp. Дата публикации: 2011-04-01.

Data read method for processing a plurality of host read commands, and flash memory controller and storage system using the same

Номер патента: US8301827B2. Автор: Chih-Kang Yeh. Владелец: Phison Electronics Corp. Дата публикации: 2012-10-30.

Memory controller and storage device including the same

Номер патента: US20220245064A1. Автор: Hye Mi KANG. Владелец: SK hynix Inc. Дата публикации: 2022-08-04.

Display device and personal immersive system and mobile terminal system using the same

Номер патента: US20220383824A1. Автор: SUN Kyung shin,Bong Choon KWAK. Владелец: LG Display Co Ltd. Дата публикации: 2022-12-01.

Electronic device and method for controlling connection of external device using the same

Номер патента: US20200089920A1. Автор: Heedong GANG,Jinhui PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-19.

Electronic device and method for controlling connection of external device using the same

Номер патента: EP3837624A1. Автор: Heedong GANG,Jinhui PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-23.

Method of optimizing llr used in nonvolatile memory device and method of correcting error in nonvolatile memory device

Номер патента: KR102081415B1. Автор: 천진영,김경륜,윤상용. Владелец: 삼성전자주식회사. Дата публикации: 2020-02-25.

Nonvolatile memory and storage device including nonvolatile memory

Номер патента: US20160232973A1. Автор: Won-Taeck JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-11.

Nonvolatile memory and storage device including nonvolatile memory

Номер патента: KR102396422B1. Автор: 정원택. Владелец: 삼성전자주식회사. Дата публикации: 2022-05-11.

Composite semiconductor memory device with error correction

Номер патента: EP2550661A1. Автор: Jin-Ki Kim. Владелец: Mosaid Technologies Inc. Дата публикации: 2013-01-30.

Memory controller with error detection and retry modes of operation

Номер патента: US11775369B2. Автор: Frederick A. Ware,Mark A. Horowitz,Ely K. Tsern. Владелец: RAMBUS INC. Дата публикации: 2023-10-03.

Memory controller with error detection and retry modes of operation

Номер патента: US12026038B2. Автор: Frederick A. Ware,Mark A. Horowitz,Ely K. Tsern. Владелец: RAMBUS INC. Дата публикации: 2024-07-02.

Storage device and operating method thereof

Номер патента: US20160276035A1. Автор: Changkyu Seol,Junjin Kong,Hong Rak Son,Hyejeong So,Seonghyeog Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-22.

Error correcting code poisoning for memory devices and associated methods and systems

Номер патента: US20230119341A1. Автор: Joshua E. Alzheimer,Randall J. Rooney. Владелец: Micron Technology Inc. Дата публикации: 2023-04-20.

Error correcting code poisoning for memory devices and associated methods and systems

Номер патента: US12003252B2. Автор: Joshua E. Alzheimer,Randall J. Rooney. Владелец: Micron Technology Inc. Дата публикации: 2024-06-04.

Error correction memory device with fast data access

Номер патента: US20240303158A1. Автор: Scott E. Schaefer,Aaron P. Boehm. Владелец: Micron Technology Inc. Дата публикации: 2024-09-12.

Memory Controller With Error Detection And Retry Modes Of Operation

Номер патента: US20240070000A1. Автор: Frederick A. Ware,Mark A. Horowitz,Ely K. Tsern. Владелец: RAMBUS INC. Дата публикации: 2024-02-29.

Memory controller and operating method thereof

Номер патента: US11501808B2. Автор: Hyun Sub KIM,Dong Sop LEE,Ie Ryung PARK,Sung Yeob Cho. Владелец: SK hynix Inc. Дата публикации: 2022-11-15.

Memory device, method of calibrating signal level thereof, and memory system having the same

Номер патента: EP3968327A1. Автор: Jaewoo Park,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Youngdo Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-16.

Memory device, method of calibrating signal level thereof, and memory system having the same

Номер патента: US11782618B2. Автор: Jaewoo Park,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Youngdo Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-10.

Memory device, method of calibrating signal level thereof, and memory system having the same

Номер патента: US20230418488A1. Автор: Jaewoo Park,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Youngdo Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-28.

Techniques for command bus training to a memory device

Номер патента: US20230297523A1. Автор: Christopher P. Mozak,Alvin Shing Chye Goh,Steven T. TAYLOR. Владелец: Intel Corp. Дата публикации: 2023-09-21.

Techniques for command bus training to a memory device

Номер патента: US12093195B2. Автор: Christopher P. Mozak,Alvin Shing Chye Goh,Steven T. TAYLOR. Владелец: Intel Corp. Дата публикации: 2024-09-17.

Techniques for command bus training to a memory device

Номер патента: US20240370390A1. Автор: Christopher P. Mozak,Alvin Shing Chye Goh,Steven T. TAYLOR. Владелец: Intel Corp. Дата публикации: 2024-11-07.

Display Device and Luminance Control Method Thereof and Mobile Terminal Using the Same

Номер патента: US20230273667A1. Автор: Jong Hee Hwang,Su Jin KWON. Владелец: LG Display Co Ltd. Дата публикации: 2023-08-31.

Method of correcting error of flash memory device, and, flash memory device and storage system using the same

Номер патента: US8612830B2. Автор: Jun Kitahara,Nagamasa Mizushima. Владелец: HITACHI LTD. Дата публикации: 2013-12-17.

Storage device and operating method thereof

Номер патента: US09881696B2. Автор: Ju Seok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-30.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: WO2008038242A2. Автор: Guoqiao Tao. Владелец: NXP B.V.. Дата публикации: 2008-04-03.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: EP2074628A2. Автор: Guoqiao Tao. Владелец: NXP BV. Дата публикации: 2009-07-01.

Memory controller and operating method thereof

Номер патента: US12051470B2. Автор: Sung Yeob Cho. Владелец: SK hynix Inc. Дата публикации: 2024-07-30.

Nonvolatile memory device, method of reading data from a nonvolatile memory device, memory system and method of operating a memory system

Номер патента: CN104051016A. Автор: 金经纶,尹翔镛. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-17.

Method of predicting remaining lifetime of nonvolatile memory device, and storage device performing the same

Номер патента: KR20220090885A. Автор: 최성혁,윤종윤,손홍락,송현종. Владелец: 삼성전자주식회사. Дата публикации: 2022-06-30.

Method of evenly using a plurality of blocks of a flash memory, and associated memory device and controller thereof

Номер патента: TW201034016A. Автор: Yang-Chih Sheng. Владелец: Silicon Motion Inc. Дата публикации: 2010-09-16.

Nonvolatile memory device, controller for controlling the memory device, and method of operating the controller

Номер патента: JP5999926B2. Автор: 翔▲ヨン▼ 尹,容俊 金,弘樂 孫,金　宰弘,宰弘 金,起準 李,政秀 鄭,城赫 崔. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-28.

Progressively programmable nonvolatile memory and integrated circuit and nonvolatile memory programming method including the same

Номер патента: KR100274099B1. Автор: 지. 웨이스 도날드,엠. 돕스 로라,에스. 토마스 제임스,에이. 라시노 그레고리. Владелец: 비센트 비.인그라시아. Дата публикации: 2001-01-15.

Method of manufacturing non-classical light source device, non-classical light source device, single-photon source device, and random number generator

Номер патента: US20230085370A1. Автор: Takuya Kadowaki,Tadashi Kawazoe. Владелец: Nichia Corp. Дата публикации: 2023-03-16.

IP address display device and power distribution unit and uninterruptible power system using the same

Номер патента: US12058103B2. Автор: Hung-Chun Chien,Wen-Yu Chuang,Kuan-Hung Wang. Владелец: Cyber Power Systems Inc. Дата публикации: 2024-08-06.

Ip address display device and power distribution unit and uninterruptible power system using the same

Номер патента: US20190372928A1. Автор: Hung-Chun Chien,Wen-Yu Chuang,Kuan-Hung Wang. Владелец: Cyber Power Systems Inc. Дата публикации: 2019-12-05.

System and method of displaying an autograph of the artist(s) of their song(s) on an electronic device and a method for customers to resell autographed mp3/mp4 type music files and the like

Номер патента: US20170228806A9. Автор: Evans E. Joseph,Ivy R. Bittle. Владелец: Individual. Дата публикации: 2017-08-10.

Methods for providing device status in response to read commands directed to write-only mode register bits and memory devices and systems employing the same

Номер патента: US20220084565A1. Автор: Matthew A. Prather,Randall J. Rooney. Владелец: Micron Technology Inc. Дата публикации: 2022-03-17.

Method of performing internal processing operation of memory device

Номер патента: US12073871B2. Автор: Pavan Kumar Kasibhatla,Hak-soo Yu,Seong-il O. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-27.

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

Номер патента: US20210082479A1. Автор: Ki-Seok OH,Young-Soo Sohn,Jin-Hoon Jang,Kyung-Soo Ha,Seok-Hun Hyun,Yeon-Kyu Choi,Chang-kyo LEE,Dae-Sik Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

System and method of transferring data over available pins

Номер патента: US09984741B2. Автор: Bhyrav M. Mutnury,Stuart Allen Berke,Vadhiraj Sankaranarayanan. Владелец: Dell Products LP. Дата публикации: 2018-05-29.

Methods and systems for serial memory device control

Номер патента: WO2019231589A1. Автор: Kishalay Haldar. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2019-12-05.

Apparatus, memory controller, memory device, memory system, and method for clock switching and low power consumption

Номер патента: US12100475B2. Автор: Hyungjin Kim,Jungsik Park,Soongmann Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-24.

Method and system for validating a memory device

Номер патента: US20220043708A1. Автор: Abhinav Sharma,Rengaraja Sudarmani,Sachin Suresh Upadhya,Prathiksha Gautham,Uday Kumar N B. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-10.

METHOD OF READING DATA FROM A NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE, AND METHOD OF OPERATING A MEMORY SYSTEM

Номер патента: US20140281770A1. Автор: YOON SANG-YONG,KIM KYUNG-RYUN. Владелец: . Дата публикации: 2014-09-18.

Device and method of information processing and computer program

Номер патента: RU2348969C2. Автор: Норифуми КИККАВА,Тосихиро МОРИТА,Есики ТАНАКА,Ёсиюки ТАКАКУ,Норифуми КИККАВА (JP),Тосихиро МОРИТА (JP),Есики ТАНАКА (JP),Ёсиюки ТАКАКУ (JP). Владелец: Сони Корпорейшн. Дата публикации: 2009-03-10.

Methods for providing device status in response to read commands directed to write-only mode register bits and memory devices and systems employing the same

Номер патента: WO2021034431A8. Автор: Matthew A. Prather,Randall J. Rooney. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2022-02-17.

Methods for providing device status in response to read commands directed to write-only mode register bits and memory devices and systems employing the same

Номер патента: US20210057003A1. Автор: Matthew A. Prather,Randall J. Rooney. Владелец: Micron Technology Inc. Дата публикации: 2021-02-25.

Methods for providing device status in response to read commands directed to write-only mode register bits and memory devices and systems employing the same

Номер патента: US11854655B2. Автор: Matthew A. Prather,Randall J. Rooney. Владелец: Micron Technology Inc. Дата публикации: 2023-12-26.

Methods for providing device status in response to read commands directed to write-only mode register bits and memory devices and systems employing the same

Номер патента: US20240203464A1. Автор: Matthew A. Prather,Randall J. Rooney. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-06-20.

Memory device for computer

Номер патента: US20160267027A1. Автор: Nobuhiro Kondo,Kenichi Maeda,Toshio Fujisawa,Shoji Sawamura,Atsushi Kunimatsu. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Memory device for computer

Номер патента: US20180307632A1. Автор: Nobuhiro Kondo,Kenichi Maeda,Toshio Fujisawa,Shoji Sawamura,Atsushi Kunimatsu. Владелец: Toshiba Memory Corp. Дата публикации: 2018-10-25.

Memory device for computer

Номер патента: US20230078983A1. Автор: Nobuhiro Kondo,Kenichi Maeda,Toshio Fujisawa,Shoji Sawamura,Atsushi Kunimatsu. Владелец: Kioxia Corp. Дата публикации: 2023-03-16.

Memory device for computer

Номер патента: US20210141746A1. Автор: Nobuhiro Kondo,Kenichi Maeda,Toshio Fujisawa,Shoji Sawamura,Atsushi Kunimatsu. Владелец: Pangea KK. Дата публикации: 2021-05-13.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20220171688A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-02.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20200293417A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-09-17.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US11734142B2. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Saman M. I. Adham,Ming-Chien Tsai,Tsung-Yung Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US11256588B2. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Saman M. I. Adham,Ming-Chien Tsai,Tsung-Yung Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-22.

Memory controller configured to transmit interrupt signal if volatile memory has no data corresponding to address requested from source

Номер патента: US11868285B2. Автор: Nobuhiro Kondo,Kenichi Maeda,Toshio Fujisawa,Shoji Sawamura,Atsushi Kunimatsu. Владелец: Kioxia Corp. Дата публикации: 2024-01-09.

Semiconductor memory device with operation limit controller

Номер патента: US12040043B2. Автор: Jaejun Lee,Seonghoon JOO,Ilhan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

Integrated circuit having memory array including ecc and/or column redundancy, and method of programming, controlling and/or operating same

Номер патента: WO2008002513A2. Автор: Anant Pratap Singh. Владелец: Innovative Silicon S.A.. Дата публикации: 2008-01-03.

Method, device, and system of generating travel order, ride-hailing method, and terminal device

Номер патента: US20240256051A1. Автор: Zhenkai YING,Jianwei Fang. Владелец: Shanghai Qwik Smart Technology Co Ltd. Дата публикации: 2024-08-01.

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

Номер патента: US12020767B2. Автор: Ki-Seok OH,Young-Soo Sohn,Jin-Hoon Jang,Kyung-Soo Ha,Seok-Hun Hyun,Yeon-Kyu Choi,Chang-kyo LEE,Dae-Sik Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-25.

Method of performing internal processing operation of memory device

Номер патента: US11790981B2. Автор: Pavan Kumar Kasibhatla,Hak-soo Yu,Seong-il O. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Method of performing internal processing operation of memory device

Номер патента: US20230360693A1. Автор: Pavan Kumar Kasibhatla,Hak-soo Yu,Seong-il O.. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-09.

Method of performing internal processing operation of memory device

Номер патента: US20200035291A1. Автор: Pavan Kumar Kasibhatla,Hak-soo Yu,Seong-il O. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-30.

Method of performing internal processing operation of memory device

Номер патента: US20210335413A1. Автор: Pavan Kumar Kasibhatla,Hak-soo Yu,Seong-il O. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-28.

Information processing apparatus and power-off control method of information processing apparaus

Номер патента: US9886078B2. Автор: Tatsuya Kawano. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-02-06.

Improving reliability, availability, and serviceability in a memory device

Номер патента: EP2035938A2. Автор: Kuljit S. Bains. Владелец: Intel Corp. Дата публикации: 2009-03-18.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20190004915A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I ADHAM. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-03.

Scan synchronous-write-through testing architectures for a memory device

Номер патента: US20230342272A1. Автор: Ching-Wei Wu,Kao-Cheng LIN,Chia-En HUANG,Ming-Hung Chang,Atul Katoch,Uppu Sharath Chandra,Donald G. Mikan, Jr.,Hao-I Yang,Ming-Chien Tsai,Tsung-Yung Chang,Saman M.I. Adham. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Electronic device and method for training executive presence

Номер патента: US20240119861A1. Автор: Vincenzo DE SALVO. Владелец: Your Speech Factory AB. Дата публикации: 2024-04-11.

Nonvolatile memory module, memory system including nonvolatile memory module, and controlling method of nonvolatile memory module

Номер патента: US20150279475A1. Автор: Wonseok Lee,Youngkug Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-01.

Memory device, memory controller and memory system

Номер патента: US20100146201A1. Автор: Hiroyuki Kobayashi,Hitoshi Ikeda,Toshiya Uchida,Tetsuo Miyamoto,Yoshinobu Yamamoto,Shinnosuke Kamata,Masanori Kurita,Hidenaga Takahashi,Ayako Sato,Tatsushi Otsuka,Tatsuya Kanda,Satoru Shirakawa,Tomohiro Kawakubo,Syusaku Yamaguchi. Владелец: Fujitsu Ltd. Дата публикации: 2010-06-10.

Apparatus, memory controller, memory device, memory system, and method for clock switching and low power consumption

Номер патента: US20240071447A1. Автор: Hyungjin Kim,Jungsik Park,Soongmann Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Memory device and clock training method thereof

Номер патента: US10304547B2. Автор: Seungjun Shin,Yeonkyu CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-28.

Semiconductor memory device, semiconductor memory system including the same, method of driving the semiconductor memory system

Номер патента: US11797382B2. Автор: Tae Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2023-10-24.

Apparatus, memory controller, memory device, memory system, and method for clock switching and low power consumption

Номер патента: US11837321B2. Автор: Hyungjin Kim,Jungsik Park,Soongmann Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-05.

Electronic device and method for processing voice input and recording in the same

Номер патента: US11991421B2. Автор: Hoseon SHIN,Chulmin LEE,Youngwoo Lee,Kyounggu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Security management of ferroelectric memory device

Номер патента: WO2022146959A1. Автор: Danilo Caraccio,Paolo Amato,Federica Cresci,Angelo Alberto Rovelli,Alessandro Orlando,Craig A. Jones,Niccolò Izzo. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2022-07-07.

Memory device, memory controller and method for operating the same

Номер патента: US20060129740A1. Автор: Dominique Savignac,Christian Sichert,Hermann Ruckerbauer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2006-06-15.

Nonvolatile memory and nonvolatile memory reproducing apparatus

Номер патента: CA2299908C. Автор: Nobuyuki Kihara,Teppei Yokota. Владелец: Sony Corp. Дата публикации: 2007-09-25.

Methods and systems for serial memory device control

Номер патента: US20190371373A1. Автор: Kishalay Haldar. Владелец: Qualcomm Inc. Дата публикации: 2019-12-05.

Methods and systems for detecting degradation of resistive memory devices

Номер патента: US20200051628A1. Автор: Ki-Sung Kim,Han-Sung Joo,Seung-you BAEK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-13.

Memory device low power mode

Номер патента: EP3899946A1. Автор: Peter Mayer,Martin Brox,Thomas Hein,Michael Dieter RICHTER,Wolfgang Anton SPIRKL. Владелец: Micron Technology Inc. Дата публикации: 2021-10-27.

Memory device low power mode

Номер патента: WO2020132207A1. Автор: Peter Mayer,Martin Brox,Thomas Hein,Michael Dieter RICHTER,Wolfgang Anton SPIRKL. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-06-25.

Intelligent memory device test rack

Номер патента: US12142336B2. Автор: Patrick CARAHER,Michael R. Spica,Gary D. Hamor,João Elmiro da Rocha Chaves,Donald Shepard. Владелец: Micron Technology Inc. Дата публикации: 2024-11-12.

SEMICONDUCTOR MEMORY DEVICE ERROR CORRECTION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND MEMORY SYSTEM INCLUIDNG THE SAME

Номер патента: US20190012229A1. Автор: CHA SANG-UHN,KIM Myeong-O. Владелец: . Дата публикации: 2019-01-10.

Recording medium, device and method of decoding data

Номер патента: RU2404463C2. Автор: Канг Соо СЕО. Владелец: Эл Джи Электроникс Инк.. Дата публикации: 2010-11-20.

Semiconductor memory device error correction circuit, semiconductor memory device including the same, and memory system including the same

Номер патента: US10635531B2. Автор: Myeong-o Kim,Sang-Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-28.

Data recovery system for memory devices

Номер патента: US20220179734A1. Автор: Sean S. Eilert,Richard Edward Fackenthal. Владелец: Micron Technology Inc. Дата публикации: 2022-06-09.

Memory device performing self-calibration by identifying location information and memory module including the same

Номер патента: US20210141747A1. Автор: Hae Young Chung,Wangsoo KIM,Heon Su JEONG,Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-13.

Memory device performing self-calibration by identifying location information and memory module including the same

Номер патента: US11874784B2. Автор: Hae Young Chung,Wangsoo KIM,Heon Su JEONG,Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-16.

Data recovery system for memory devices

Номер патента: US20220342748A1. Автор: Sean Stephen Eilert,Richard Edward Fackenthal. Владелец: Micron Technology Inc. Дата публикации: 2022-10-27.

Memory device performing self-calibration by identifying location information and memory module including the same

Номер патента: US20230131945A1. Автор: Hae Young Chung,Wangsoo KIM,Heon Su JEONG,Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-27.

Memory device performing self-calibration by identifying location information and memory module including the same

Номер патента: US20240111695A1. Автор: Hae Young Chung,Wangsoo KIM,Heon Su JEONG,Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-04.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20210096985A1. Автор: KIM Eui Jin,KIM Hongseok,NAM EHyun,SUN Kyoungmoon. Владелец: FADU Inc.. Дата публикации: 2021-04-01.

Methods of Programming Data in a Non-Volatile Memory Device and Methods of Operating a Nand Flash Memory Device Using the Same

Номер патента: US20110170356A1. Автор: Dong-Uk Choi,Hee-Soo Kang,Choong-ho Lee. Владелец: Individual. Дата публикации: 2011-07-14.

Method of reducing reliability degradation of nonvolatile memory device, nonvolatile memory device using the same and method of testing nonvolatile memory device using the same

Номер патента: US11915770B2. Автор: Minseok Kim,Junyong PARK,Ilhan Park,Doohyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-27.

Memory cell, memory device manufacturing method and memory device operation method thereof

Номер патента: US12069857B2. Автор: Feng-Min Lee,Yu-Hsuan Lin,Po-Hao Tseng. Владелец: Macronix International Co Ltd. Дата публикации: 2024-08-20.

Computer system data restoring device and the method for restoring computer system data using the same

Номер патента: US20050022055A1. Автор: Ming-Chiao Ho. Владелец: Individual. Дата публикации: 2005-01-27.

Server computing device and image search system based on contents recognition using the same

Номер патента: US09934250B2. Автор: Ki Hyeok BAE,In Je CHO. Владелец: CK&B Co Ltd. Дата публикации: 2018-04-03.

Cache memory device, control unit of cache memory, information processing apparatus, and cache memory control method

Номер патента: US20130297882A1. Автор: Takashi Yamamoto,Takaharu Ishizuka,Yuka Hosokawa,Makoto Hataida. Владелец: Fujitsu Ltd. Дата публикации: 2013-11-07.

Method of reflecting on another device an addition to a browser cache on a handheld electronic device, and associated device

Номер патента: CA2649331C. Автор: Yu Tang,Daniel Van Geest. Владелец: Research in Motion Ltd. Дата публикации: 2011-09-06.

Memory device configured to execute plural access commands in parallel and memory access method therefor

Номер патента: US20120137051A1. Автор: Hironobu Miyamoto,Taichiro Yamanaka,Yoko Masuo. Владелец: Toshiba Corp. Дата публикации: 2012-05-31.

Method of initializing and programing 3d non-volatile memory device

Номер патента: US20170133095A1. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2017-05-11.

Method of initializing and programing 3d non-volatile memory device

Номер патента: US20180197615A1. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2018-07-12.

Method of initializing and programming 3D non-volatile memory device

Номер патента: US9947413B2. Автор: Sang Ho Lee,Byung Gook Park,Dae Woong KWON,Do Bin KIM. Владелец: SK hynix Inc. Дата публикации: 2018-04-17.

Method of compensating charge loss and source line bias in programing of non-volatile memory device

Номер патента: US20200219561A1. Автор: Ming-Chang Tsai,Chun-Yi Tu,Jui-Lung Weng. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2020-07-09.

Memory device, memory system including the memory device, and test operation of the memory device

Номер патента: US12125550B2. Автор: Jun Hyuk Lee,Min Kyu Lee,Deung Kak YOO,Dong Jae JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-10-22.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Номер патента: US20120120727A1. Автор: Moo Sung Kim,Wook Ghee Hahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-05-17.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Номер патента: US8441856B2. Автор: Moo Sung Kim,Wook Ghee Hahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-05-14.

A memory device, programming method and memory system

Номер патента: US20240005994A1. Автор: Liang Qiao,Bowen Wang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-04.

Methods of operating electronic devices including touch sensitive interfaces using force/deflection sensing and related devices and computer program products

Номер патента: EP2425318A2. Автор: Gunnar Klinghult. Владелец: SONY ERICSSON MOBILE COMMUNICATIONS AB. Дата публикации: 2012-03-07.

Methods of operating electronic devices including touch sensitive interfaces using force/deflection sensing and related devices and computer program products

Номер патента: TW201044239A. Автор: Gunnar Klinghult. Владелец: Sony Ericsson Mobile Comm Ab. Дата публикации: 2010-12-16.

Method of updating parameters for entropy coding and decoding of transformation coefficient level, and entropy coding device and entropy decoding device for transformation coefficient level with its use

Номер патента: RU2684587C1. Автор: Дзеонг-Хоон ПАРК,Чан-юл КИМ,Дзае-Хиун КИМ. Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2019-04-09.

Method of updating parameters for entropy coding and decoding of transformation coefficient level, and entropy coding device and entropy decoding device for transformation coefficient level with its use

Номер патента: RU2660639C1. Автор: Дзеонг-Хоон ПАРК,Чан-юл КИМ,Дзае-Хиун КИМ. Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2018-07-06.

Methods and Electronic Devices Enabling a Dual Content Presentation Mode of Operation

Номер патента: US20230236786A1. Автор: Amit Kumar Agrawal,Caio Luiz Leal Chagas do Nascimento,Mahadevan Ayalur. Владелец: MOTOROLA MOBILITY LLC. Дата публикации: 2023-07-27.

Method of erasing data in non-volatile semiconductor memory device while suppressing variation

Номер патента: US20060158939A1. Автор: Takashi Ito,Hidenori Mitani. Владелец: Renesas Technology Corp. Дата публикации: 2006-07-20.

A memory device and method of controlling leakage current within such a memory device

Номер патента: GB2513701A. Автор: Bo Zheng,Gus Yeung,Fakhruddin Ali Bohra. Владелец: Advanced Risc Machines Ltd. Дата публикации: 2014-11-05.

Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same

Номер патента: US11942147B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos,Blandine Duriez,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Nonvolatile memory cells having an embedded selection element and nonvolatile memory cell arrays including the nonvolatile memory cells

Номер патента: US20210066585A1. Автор: Sang Min Lee. Владелец: Individual. Дата публикации: 2021-03-04.

Method of providing photofinishing services

Номер патента: WO2005029838A3. Автор: John Randall Fredlund,Joseph Anthony Manico,Robert Paul Cloutier,Steven Lewe Mizelle,Marc M Gibeley. Владелец: Marc M Gibeley. Дата публикации: 2005-05-26.

Method of providing photofinishing services

Номер патента: WO2005029838A2. Автор: John Randall Fredlund,Joseph Anthony Manico,Robert Paul Cloutier,Marc M. GIBELEY,Steven Lewe Mizelle. Владелец: EASTMAN KODAK COMPANY. Дата публикации: 2005-03-31.

Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same

Номер патента: US20230345732A1. Автор: Chung-Te Lin,Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Yi-Ching Liu,Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Methods of writing junction-isolated depletion mode ferroelectric memory devices

Номер патента: US20040257853A1. Автор: Craig Salling,Brian Huber. Владелец: Micron Technology Inc. Дата публикации: 2004-12-23.

Layout structure and method of a column path of a semiconductor memory device

Номер патента: US6700168B2. Автор: Hyang-Ja Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-03-02.

Method of identifying an object, an identification tag, an object adapted to be identified, and related device and system

Номер патента: EP2016539A1. Автор: Adrian Paul Burden,Peter Malcolm Moran,Zhiqian Liang. Владелец: Singular Id Pte Ltd. Дата публикации: 2009-01-21.

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Номер патента: US11889702B2. Автор: Derek Stewart,Bhagwati PRASAD,Alan Kalitsov. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-01-30.

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Номер патента: US11887640B2. Автор: Derek Stewart,Bhagwati PRASAD,Alan Kalitsov. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-01-30.

Memory device for generating pulse amplitude modulation-based dq signal and memory system including the same

Номер патента: US20220076716A1. Автор: Hyunyoon Cho,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Jindo BYUN,Youngdo Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-10.

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Номер патента: US11871679B2. Автор: Derek Stewart,Bhagwati PRASAD,Alan Kalitsov. Владелец: Western Digital Technologies Inc. Дата публикации: 2024-01-09.

Memory device for generating pulse amplitude modulation-based dq signal and memory system including the same

Номер патента: EP3968328A1. Автор: Hyunyoon Cho,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Jindo BYUN,Youngdo Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-16.

Semiconductor memory device having a delay locked loop (DLL) and method for driving the same

Номер патента: US7710817B2. Автор: Yoon-Jae Shin,Kyoung-Nam Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-05-04.

A method of waking up and a portable electronic device configured to perform the same

Номер патента: CA2716699C. Автор: Marc Edward HOLBEIN,Kevin Howard Orr,Aleksandar Sasha PAPO,Adam Louis PARCO,Christopher James Grant. Владелец: BlackBerry Ltd. Дата публикации: 2016-09-06.

Adjustable percutaneous devices for annuloplasty, delivering systems, method for percutaneous unfolding of annuloplasty device and method implemented by means of one or more treatment devices

Номер патента: RU2738014C1. Автор: Пьерджорджио ТОЦЦИ,Даниель ХАЙОЗ,Марко ГАРД,Даниель ЗАНОТТИ. Владелец: Кефалиос С.А.С.. Дата публикации: 2020-12-07.

Information processing device and recording system

Номер патента: US11747955B2. Автор: Norihiko Asai. Владелец: Brother Industries Ltd. Дата публикации: 2023-09-05.

Methods of programming memory cells in non-volatile memory devices

Номер патента: US09818477B2. Автор: Jae-Hong Kim,Jin-Man Han,Young-Seop Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-14.

Double programming methods of a multi-level-cell nonvolatile memory

Номер патента: US20090219759A1. Автор: Wen-Chiao Ho,Kuen-Long Chang,Chun-Hsiung Hung. Владелец: Macronix International Co Ltd. Дата публикации: 2009-09-03.

Memory Controllers and User Systems Including the Same

Номер патента: US20140133241A1. Автор: Cheol Kwon,Iksung Park,In Bo Shim,Jong-Wook JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-15.

Flash memory device having high speed erase mode and method for performing the erase mode

Номер патента: US5526309A. Автор: Toshikatsu Jinbo. Владелец: NEC Corp. Дата публикации: 1996-06-11.

Methods of enhancing speed of reading data from memory device

Номер патента: EP4235672A3. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-18.

Methods of enhancing speed of reading data from memory device

Номер патента: EP4235672A2. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-30.

Methods of enhancing speed of reading data from memory device

Номер патента: US20210166769A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Methods of enhancing speed of reading data from memory device

Номер патента: EP3915115A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-12-01.

Methods of enhancing speed of reading data from memory device

Номер патента: US20210280258A1. Автор: Li Xiang,Ke Liang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-09-09.

Information processing system performing synchronization between memory devices and memory devices performing wireless communication

Номер патента: US09898747B2. Автор: Shigeki Koizumi,Shuichi Sakurai,Keisuke Sato,Michio Ido,Masahiko Nakashima,Masaomi Teranishi,Shigeto ENDO. Владелец: Toshiba Memory Corp. Дата публикации: 2018-02-20.

Semiconductor memory devices with open bitline architectures and methods of controlling the bitlines of such semiconductor memory devices

Номер патента: US20070047350A1. Автор: Ji-hoon Park,Chang-Yeong Jeong,Sung-Wan Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-01.

Application processor and data processing system including the same

Номер патента: US09977749B2. Автор: Sik Kim,Kook Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20230116292A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2023-04-13.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20210335402A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

Semiconductor memory device, memory system having semiconductor memory device, and method for testing memory system

Номер патента: US7634697B2. Автор: Jin-Soo Park,Dong-Jun Kim,Kae-Won Ha,Keun-Soo Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-12-15.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20230377619A1. Автор: JIN Lan,Genta Takaya. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-11-23.

Reference cells for spin torque based memory device

Номер патента: WO2011084905A2. Автор: John K. DeBrosse,Daniel C. Worledge. Владелец: INTERNATIONAL BUSINESS MACHINES CORP.. Дата публикации: 2011-07-14.

Method of estimating self refresh period of semiconductor memory device

Номер патента: US8264904B2. Автор: Hyung-Dong Kim,Byung-Hwan So. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-09-11.

Utilization of a memory device for per-user encryption

Номер патента: US20240267208A1. Автор: Zhan Liu,Lance W. Dover. Владелец: Micron Technology Inc. Дата публикации: 2024-08-08.

Electronic device and method for eye-contact training

Номер патента: US12039879B2. Автор: Simone Frattasi,Vincenzo DE SALVO. Владелец: Your Speech Factory AB. Дата публикации: 2024-07-16.

Method of managing priority in the context of a secure element domain with multiple interfaces, electronic device and communication system

Номер патента: EP3696759B1. Автор: Giten Kulkarni,Shameer PUTHALAN,Xavier Jérôme Kerdreux. Владелец: NXP BV. Дата публикации: 2024-07-24.

Pairing method between a host device and a peripheral device

Номер патента: US20240095191A1. Автор: Denis Farison,Joris DELCLEF. Владелец: Proton World International NV. Дата публикации: 2024-03-21.

Memory controller capable of performing scheduled memory maintenance from a sleep state

Номер патента: EP3563213A1. Автор: Bezan KAPADIA,Amir Ali Radjai. Владелец: Intel Corp. Дата публикации: 2019-11-06.

Memory controller capable of performing scheduled memory maintenance from a sleep state

Номер патента: WO2018125399A1. Автор: Bezan KAPADIA,Amir Ali Radjai. Владелец: Intel Corporation. Дата публикации: 2018-07-05.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20210216616A1. Автор: Kim Jisoo,Lee Seungjae,SHIN Mingon,LEE Hwasoo,Ju Myeongjong. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-07-15.

Built-in-self-test logic, memory device with same, and memory module testing method

Номер патента: US20240021261A1. Автор: Jaehyeok Kim,Yong Ki Lee,Eunhye OH,Gapkyoung Kim,Taewook Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-18.

Built-in-self-test logic, memory device with same, and memory module testing method

Номер патента: US11804276B2. Автор: Jaehyeok Kim,Yong Ki Lee,Eunhye OH,Gapkyoung Kim,Taewook Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Method of and apparatus for sharing redundancy circuits between memory arrays within a semiconductor memory device

Номер патента: US6208569B1. Автор: Vipul Patel,Daniel F. McLaughlin,Terry T. Tsai. Владелец: GENESIS SEMICONDUCTOR Inc. Дата публикации: 2001-03-27.

Zq calibration circuit, operation method of the zq calibration circuit, and semiconductor memory device

Номер патента: US20240127871A1. Автор: Sungyong Cho,Jaehyeok Baek,Donggun AN,Moonchul Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Memory device, memory system including the same, and method of operating the memory system

Номер патента: US20190237144A1. Автор: Kwang Su Kim. Владелец: SK hynix Inc. Дата публикации: 2019-08-01.

Asymmetric pass field-effect transistor for nonvolatile memory

Номер патента: US10418110B2. Автор: Venkatraman Prabhakar,Sungkwon Lee. Владелец: Longitude Flash Memory Solutions Ltd. Дата публикации: 2019-09-17.

Control gate signal for data retention in nonvolatile memory

Номер патента: US20220284961A1. Автор: Anubhav Khandelwal,Abhijith Prakash. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-09-08.

Asymmetric pass field-effect transistor for nonvolatile memory

Номер патента: US20180358097A1. Автор: Venkatraman Prabhakar,Sungkwon Lee. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-12-13.

Asymmetric pass field-effect transistor for nonvolatile memory

Номер патента: US20200402588A1. Автор: Venkatraman Prabhakar,Sungkwon Lee. Владелец: Longitdue Flash Memory Solutions Ltd. Дата публикации: 2020-12-24.

Asymmetric pass field-effect transistor for nonvolatile memory

Номер патента: US10020060B2. Автор: Venkatraman Prabhakar,Sungkwon Lee. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-07-10.

Method of designing and manufacturing cam device and three-dimensional design-support computer program for the same

Номер патента: US20110202158A1. Автор: Satoshi Nakamura,Hiroyoshi Kako,Akihito Ishizaka. Владелец: Sankyo Oilless Industries Inc. Дата публикации: 2011-08-18.

Method and apparatus for server platform architectures that enable serviceable nonvolatile memory modules

Номер патента: WO2015080717A1. Автор: Dimitrios Ziakas,Mohan J. Kumar,Bassam N. Coury,Murugasamy K. Nachimuthu,Russell J. Wunderlich,Thi Dang. Владелец: Intel Corporation. Дата публикации: 2015-06-04.

Memory device and non-transitory computer readable recording medium

Номер патента: US12111760B2. Автор: Shinichi Kanno. Владелец: Kioxia Corp. Дата публикации: 2024-10-08.

Apparatus for monitoring data access to internal memory device and internal memory device

Номер патента: US09934165B2. Автор: Gang Shan. Владелец: Montage Technology Shanghai Co Ltd. Дата публикации: 2018-04-03.

Storage device, nonvolatile memory system including memory controller, and operating method of the storage device

Номер патента: US11947466B2. Автор: SEUNGJAE LEE,Myeongjong Ju,Mingon Shin,Hwasoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-02.

Communication method between virtual machines using mailboxes, system-on-chip performing the communication method, and in-vehicle infotainment system including same

Номер патента: US20230305878A1. Автор: Ji-Heon Oh,Sowon NA,Gyunghoon KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Firmware updating method and electronic apparatus using the same

Номер патента: US20160103670A1. Автор: Kuan-Jen Chen,Chia-Ming Hu. Владелец: Transcend Information Inc. Дата публикации: 2016-04-14.

Method of warpage-aware floorplanning for heterogeneous integration structure

Номер патента: US20230281371A1. Автор: Yang Hsu,Yao-Wen Chang,Yu-Tsang Hsieh,Min-Hsuan CHUNG. Владелец: AnaGlobe Tech Inc. Дата публикации: 2023-09-07.

Device for connection with a storage device and a host

Номер патента: WO2010017008A1. Автор: Itzhak Pomerantz,Judah Gamliel Hahn,Shai Ben-Yacov. Владелец: SANDISK IL LTD.. Дата публикации: 2010-02-11.

Device for connection with a storage device and a host

Номер патента: EP2332052A1. Автор: Itzhak Pomerantz,Judah Gamliel Hahn,Shai Ben-Yacov. Владелец: Sandisk IL Ltd. Дата публикации: 2011-06-15.

Method and apparatus for server platform architectures that enable serviceable nonvolatile memory modules

Номер патента: EP3074878A1. Автор: Dimitrios Ziakas,Mohan J. Kumar,Bassam N. Coury,Murugasamy K. Nachimuthu,Russell J. Wunderlich,Thi Dang. Владелец: Intel Corp. Дата публикации: 2016-10-05.

Memory device and memory device controlling apparatus

Номер патента: US20100017541A1. Автор: Hideaki Yamashita,Takeshi Ootsuka. Владелец: Panasonic Corp. Дата публикации: 2010-01-21.

Polymer compositions including recycled polyamide and electronic device and protective case for electronic device including the same

Номер патента: US20230250280A1. Автор: Jinsoo Lee,Hangyu HWANG,Pranveer Singh RATHORE,Kyungrae Kim,Bongjoon Kim,Changyun SHIN,Sambong JEONG,Gukhyun HAN. Владелец: Hanwha Compound Corp. Дата публикации: 2023-08-10.

Polymer composition comprising recycled polyamide, and electronic device and electronic device protection case comprising same

Номер патента: EP4407004A1. Автор: Jinsoo Lee,Hangyu HWANG,Pranveer Singh RATHORE,Kyungrae Kim,Bongjoon Kim,Changyun SHIN,Sambong JEONG,Gukhyun HAN. Владелец: Hanwha Compound Corp. Дата публикации: 2024-07-31.

Method, apparatus, device, and storage medium for performing processing task

Номер патента: US20210072996A1. Автор: Yong Wang,Jian OUYANG,Zhibiao Zhao,Hefei Zhu,Xiaozhang Gong,Qingshu Chen. Владелец: Baidu com Times Technology Beijing Co Ltd. Дата публикации: 2021-03-11.

Memory device and non-transitory computer readable recording medium

Номер патента: US20230342294A1. Автор: Shinichi Kanno. Владелец: Kioxia Corp. Дата публикации: 2023-10-26.

Memory device and non-transitory computer readable recording medium

Номер патента: US20160188459A1. Автор: Shinichi Kanno. Владелец: Toshiba Corp. Дата публикации: 2016-06-30.

SEMICONDUCTOR MEMORY DEVICE FOR SHARING INTER-MEMORY COMMAND AND INFORMATION, MEMORY SYSTEM INCLUDING THE SAME AND METHOD OF OPERATING THE MEMORY SYSTEM

Номер патента: US20190171599A1. Автор: OH TAE YOUNG,DOO SU YEON. Владелец: . Дата публикации: 2019-06-06.

SEMICONDUCTOR MEMORY DEVICE FOR SHARING INTER-MEMORY COMMAND AND INFORMATION, MEMORY SYSTEM INCLUDING THE SAME AND METHOD OF OPERATING THE MEMORY SYSTEM

Номер патента: US20160292111A1. Автор: OH TAE YOUNG,DOO SU YEON. Владелец: . Дата публикации: 2016-10-06.

Data storage device and non-volatile memory control method

Номер патента: US20240289269A1. Автор: Yi-Kang Chang. Владелец: Silicon Motion Inc. Дата публикации: 2024-08-29.

Method of generating random number using nonvolatile memory in two-track scheme and apparatus for the same

Номер патента: US20130282781A1. Автор: In-Seok Kang,Byeong-Ho Ahn,Dae-Seon PARK,Haeng-Seok KO. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2013-10-24.

Device and method for mediating heavy equipment and system using the same

Номер патента: US20210334869A1. Автор: Seok-Ho BAE,Han-Jun BAE,Hyun-Woong BAE. Владелец: Individual. Дата публикации: 2021-10-28.

Memory controller device, control method for memory controller device and data reception device

Номер патента: US20090249110A1. Автор: Shinichiro Ikeda,Akihiro TAKAKURA. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2009-10-01.

Method to offload memory tiering from the cpu to the memory device

Номер патента: US20240070065A1. Автор: Stuart Allen Berke,Quy Ngoc Hoang. Владелец: Dell Products LP. Дата публикации: 2024-02-29.

Apparatus for monitoring data access to internal memory device and internal memory device

Номер патента: US20160342533A1. Автор: Gang Shan. Владелец: Montage Technology Shanghai Co Ltd. Дата публикации: 2016-11-24.

NONVOLATILE MEMORY SYSTEM AND METHOD OF PERFORMING OPERATION OF THE NONVOLATILE MEMORY SYSTEM

Номер патента: US20150301932A1. Автор: HEO Jae-hoon,OH Moon-wook. Владелец: . Дата публикации: 2015-10-22.

Memory controller with programmable timing and control registers for data transfers which have a distinct sequence of phases.

Номер патента: GB2396711A. Автор: Neil Andrew Jameson. Владелец: Advanced Risc Machines Ltd. Дата публикации: 2004-06-30.

Operating method of memory device for managing map data of each of plurality of storage devices, computing system including memory device, and operating method of computing system

Номер патента: EP4273702A1. Автор: Kyunghan LEE,Chon Yong Lee,Jae-gon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-08.

Memory with a communications bus for device-to-controller communication, and associated systems, devices, and methods

Номер патента: US20220365889A1. Автор: Sujeet Ayyapureddi. Владелец: Micron Technology Inc. Дата публикации: 2022-11-17.

Method of operating a memory device, memory module, and a memory device comprising the memory module

Номер патента: US20070028059A1. Автор: Peter Gregorius. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2007-02-01.

Method of designing semiconductor device

Номер патента: US10552566B2. Автор: Jin Young Park,Myung Jin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-04.

MEMORY CONTROLLER, AND ELECTRONIC DEVICE HAVING THE SAME AND METHOD FOR OPERATING THE SAME

Номер патента: US20140068161A1. Автор: YI JONG-WON,MOON JEONG-WOOK. Владелец: . Дата публикации: 2014-03-06.

NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY CONTROL DEVICE, AND NON-VOLATILE MEMORY CONTROL METHOD

Номер патента: US20150120992A1. Автор: Nishiura Toshifumi,Yamazoe Hiroaki,NAGASHIMA KAN,Nakajama Daisuke. Владелец: . Дата публикации: 2015-04-30.

Shared function for multi-port memory device

Номер патента: US20240241823A1. Автор: Marco Redaelli,Gaurav Sinha. Владелец: Micron Technology Inc. Дата публикации: 2024-07-18.

Method of managing a symmetrically blocked nonvolatile memory having a bifurcated storage architecture

Номер патента: WO1998036416A3. Автор: David A Edwards,Robert N Hasbun,Andrew H Gafken. Владелец: Intel Corp. Дата публикации: 1998-11-19.

Memory address checking within a solid state memory device

Номер патента: GB2342739A. Автор: Jeremy Harris. Владелец: Sun Microsystems Inc. Дата публикации: 2000-04-19.

Memory device to offload processing from an advanced driver assistance system

Номер патента: US20240012757A1. Автор: Shiva PAHWA,Sathyashankara Bhat Muguli,Abhilash Nag,Ravi Kiran Gummaluri. Владелец: Micron Technology Inc. Дата публикации: 2024-01-11.

MEMORY SYSTEMS INCLUDING FLASH MEMORIES, FIRST BUFFER MEMORIES, SECOND BUFFER MEMORIES AND MEMORY CONTROLLERS AND METHODS FOR OPERATING THE SAME

Номер патента: US20140149646A1. Автор: IM Kwangseok. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-05-29.

MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20200104201A1. Автор: KANG Nam-wook. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-04-02.

MEMORY CONTROLLER AND ACCESSING SYSTEM UTILIZING THE SAME

Номер патента: US20140304458A1. Автор: LIN Jiyun-Wei,CHYAN Yu-Wei. Владелец: SILICON MOTION, INC.. Дата публикации: 2014-10-09.

Block management method for a flash memory and flash memory controller and storage system using the same

Номер патента: US8775771B2. Автор: Chih-Kang Yeh,Cheng-Chi Hsieh. Владелец: Phison Electronics Corp. Дата публикации: 2014-07-08.

Memory system comprising a plurality of memory controllers and method for synchronizing the same

Номер патента: CA2508655A1. Автор: Christoph Baumhof,Reinhard Kuehne. Владелец: Individual. Дата публикации: 2004-06-17.

Memory system comprising a plurality of memory controllers and method for synchronizing the same

Номер патента: US20060117150A1. Автор: Christoph Baumhof,Reinhard KÜHNE. Владелец: Hyperstone Ag. Дата публикации: 2006-06-01.

Nonvolatile memory device and method of programming the same

Номер патента: US20170271016A1. Автор: Yoon-hee Choi,Sang-Hyun Joo,Sungyeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-21.

Method of writing data in nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same

Номер патента: US11862261B2. Автор: Heewon Lee,Chanha KIM,Kwangwoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Method of programming data in nonvolatile memory device and nonvolatile memory device performing the same

Номер патента: US20240212761A1. Автор: Hyun SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-27.

Method of reducing program operation time in 3d nand memory systems

Номер патента: US20240296889A1. Автор: Hongtao Liu,XiangNan Zhao. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-05.

Method of inputting address in nonvolatile memory device and method of operating the nonvolatile memory device

Номер патента: US20090290433A1. Автор: Young Soo Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-11-26.

Nonvolatile memory devices and methods of reading the nonvolatile memory devices

Номер патента: US20210090664A1. Автор: Hyun Min Song. Владелец: SK Hynix System IC Inc. Дата публикации: 2021-03-25.

Methods of driving a memory

Номер патента: US9105339B2. Автор: Jun-Jin Kong,Moshe Twitto. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-08-11.

Command control for synchronous memory device

Номер патента: US20090150635A1. Автор: Kenji Shibata,Mitsuhiro Nagao,Satoru Kawamoto. Владелец: SPANSION LLC. Дата публикации: 2009-06-11.

Command control for synchronous memory device

Номер патента: US8380917B2. Автор: Kenji Shibata,Mitsuhiro Nagao,Satoru Kawmoto. Владелец: SPANSION LLC. Дата публикации: 2013-02-19.

Page buffer of a nonvolatile memory device and method of programming and reading a nonvolatile memory device

Номер патента: DE102004060349B4. Автор: Sok Kyu Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-12-08.

Page buffer of a nonvolatile memory device and method of programming and reading a nonvolatile memory device

Номер патента: DE102004060349A1. Автор: Sok Kyu Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-02-09.

Row clear features for memory devices and associated methods and systems

Номер патента: US11881251B2. Автор: Gary L. Howe,Brian W. Huber,Scott E. Smith,Miles S. Wiscombe,Tony M. Brewer. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-01-23.

Row clear features for memory devices and associated methods and systems

Номер патента: US20240161809A1. Автор: Gary L. Howe,Brian W. Huber,Scott E. Smith,Miles S. Wiscombe,Tony M. Brewer. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-05-16.

Nonvolatile memory device, wordline voltage generating method, programming method and reading method thereof, memory system and electronic device having the same

Номер патента: KR101780421B1. Автор: 이수웅,권석천,강상철. Владелец: 삼성전자주식회사. Дата публикации: 2017-09-21.

NONVOLATILE MEMORY DEVICE INCLUDING A FAST READ PAGE AND A STORAGE DEVICE INCLUDING THE SAME

Номер патента: US20210057025A1. Автор: LEE Heewon,Roh Kangho,LEE Yunjung,KIM Chanha. Владелец: . Дата публикации: 2021-02-25.

Methods of programming multi-level cell nonvolatile memory devices and devices so operating

Номер патента: US9343158B2. Автор: Jung-ho Song,Sang-Won Hwang,Su-yong KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-05-17.

Page buffer, method of sensing memory cell, and nonvolatile memory device

Номер патента: CN109243507B. Автор: 李泰润,金埰勋. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-23.

Nonvolatile semiconductor memory device

Номер патента: US7881106B2. Автор: Hiroshi Sukegawa. Владелец: Toshiba Corp. Дата публикации: 2011-02-01.

Nonvolatile Memories Having Data Input/Output Switches and Data Storage Devices and Methods Using the Same

Номер патента: US20150380090A1. Автор: Su-Jin Kim,Junghee Cho,Jiwoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-12-31.

Method of verifying programming of a nonvolatile memory device

Номер патента: US20090141556A1. Автор: Seung Hwan BAIK. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-06-04.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Номер патента: US20120120727A1. Автор: Moo Sung Kim,Wook Ghee Hahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-05-17.

METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE

Номер патента: US20130250691A1. Автор: KIM Moo Sung,Hahn Wook Ghee. Владелец: . Дата публикации: 2013-09-26.

FLASH MEMORY DEVICE REVISING PROGRAM VOLTAGE, THREE-DIMENSIONAL MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE MEMORY DEVICE, AND METHODS OF PROGRAMMING THE MEMORY DEVICE

Номер патента: US20170206978A1. Автор: JOO Sang-Hyun,IM JAE-WOO. Владелец: . Дата публикации: 2017-07-20.

Systems and methods of applying semantic features for machine learning of message categories

Номер патента: US12058092B1. Автор: Laszlo Lukacs. Владелец: Google LLC. Дата публикации: 2024-08-06.

Method of operating a memory system having an erase control unit

Номер патента: US9437310B2. Автор: Junjin Kong,Hong Rak Son,Eun Chu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-06.

Memory device and method for operating the same

Номер патента: US20070211533A1. Автор: Sang-jin Park,Sang-Min Shin,Young-soo Park,Young-Kwan Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-09-13.

Method of verifying layout of vertical memory device

Номер патента: US09929172B2. Автор: Sung-Hoon Kim,Ki-Won Kim,Jae-Ick SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-27.

Nonvolatile memory, semiconductor integrated circuit having therein the nonvolatile memory, the method of writing data to the nonvolatile memory and semiconductor device containing the nonvolatile memory array

Номер патента: TW574702B. Автор: Toshihiro Tanaka,Yutaka Shinagawa,Kazufumi Suzukawa,Takashi Yamaki,Masamichi Fujito. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2004-02-01.

Metal oxide semiconductor device and method for operating an array structure comprising the same devices

Номер патента: US20080298135A1. Автор: Chia-Hsing Chen. Владелец: Individual. Дата публикации: 2008-12-04.

Metal oxide semiconductor device and method for operating an array structure comprising the same devices

Номер патента: US20100213528A1. Автор: Chia-Hsing Chen. Владелец: Individual. Дата публикации: 2010-08-26.

Memory system and nonvolatile memory

Номер патента: US20200303018A1. Автор: Yoshihisa Kojima,Kazutaka Takizawa,Masaaki Niijima. Владелец: Kioxia Corp. Дата публикации: 2020-09-24.

Method of determining rotor frequency and/or rotor angle of a reactive electrical machine, a control device and a drive system

Номер патента: RU2689117C2. Автор: Харальд ЗИННЕР,Тило ВАЙГЕЛЬ. Владелец: СИМЕНС АКЦИЕНГЕЗЕЛЛЬШАФТ. Дата публикации: 2019-05-24.

Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby

Номер патента: US20180329312A1. Автор: Stefan Michael Bruno BÄUMER,Erwin John Van Zwet,Hamed Sadeghian Marnani,Stefan Kuiper. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2018-11-15.

Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby

Номер патента: EP3378092A1. Автор: Stefan Michael Bruno BÄUMER,Erwin John Van Zwet,Hamed Sadeghian Marnani,Stefan Kuiper. Владелец: Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO. Дата публикации: 2018-09-26.

Conveyance Device, and Specimen Analysis System and Specimen Pretreatment Device Including the Same

Номер патента: US20220252627A1. Автор: Hiroshi Watanabe,Hiroyuki Kobayashi,Satoru Kaneko,Kuniaki Onizawa,Yasuaki Aoyama,Katsuhiro Kambara,Takeshi Tamakoshi,Ryosuke Hoshi. Владелец: Hitachi High Tech Corp. Дата публикации: 2022-08-11.

METHODS OF PROGRAMMING MULTI-LEVEL CELL NONVOLATILE MEMORY DEVICES AND DEVICES SO OPERATING

Номер патента: US20140211565A1. Автор: KIM SU-YONG,SONG JUNG-HO,Hwang Sang-Won. Владелец: . Дата публикации: 2014-07-31.

Semiconductor memory device with mos nonvolatile memory cell array in well region on semiconductor substrate

Номер патента: KR100431482B1. Автор: 다우라다다유끼. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2004-05-14.

Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device

Номер патента: US7961514B2. Автор: Michael Bernhard Sommer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2011-06-14.

Semiconductor Device, a Method of Using a Semiconductor Device, a Programmable Memory Device, and Method of Producing a Semiconductor Device

Номер патента: US20100172176A1. Автор: Michael Bernhard Sommer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-07-08.

Three-dimensional flash memory device supporting bulk erase operation and manufacturing method therefor

Номер патента: US11844215B2. Автор: Yunheub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-12.

Method of verifying layout of vertical memory device

Номер патента: US20170243882A1. Автор: Sung-Hoon Kim,Ki-Won Kim,Jae-Ick SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-24.

Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells

Номер патента: US6493280B2. Автор: ANDREI Mihnea,Chun Chen,Jeffrey Kessenich. Владелец: Micron Technology Inc. Дата публикации: 2002-12-10.

Method for reading and writing unreliable memories and a corresponding memory controller device and memory

Номер патента: US12057858B2. Автор: Andreas Burg,Reza Ghanaatian. Владелец: Ecole Polytechnique Federale de Lausanne EPFL. Дата публикации: 2024-08-06.

Method of operating image processor generating top- down heat map and electronic device having the image processor

Номер патента: US20240185427A1. Автор: Yongjin Lee,Sung Yup LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2024-06-06.

Microelectronic device interface configurations, and associated methods, devices, and systems

Номер патента: US12033945B2. Автор: Satoru Sugimoto,Hiroki Hosaka,Hayato Oishi. Владелец: Micron Technology Inc. Дата публикации: 2024-07-09.

Pad arrangement in semiconductor memory device and method of driving semiconductor device

Номер патента: US20040256641A1. Автор: Jung-Bae Lee,Mee-Hyun Ahn. Владелец: Individual. Дата публикации: 2004-12-23.

Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same

Номер патента: TW201214813A. Автор: Jang-eun Lee,Woo-Chang Lim,Se-Chung Oh,Woo-Jin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-01.

Non-volatile memory and methods of fabricating the same

Номер патента: WO2022260595A3. Автор: Wen Siang LEW,Putu Andhita DANANJAYA,Yuanmin DU,Siew Wei HOO,Weng Hong Lai. Владелец: NANYANG TECHNOLOGICAL UNIVERSITY. Дата публикации: 2023-02-09.

Non-volatile memory and methods of fabricating the same

Номер патента: US20240268126A1. Автор: Wen Siang LEW,Putu Andhita DANANJAYA,Yuanmin DU,Siew Wei HOO,Weng Hong Hong LAI. Владелец: NANYANG TECHNOLOGICAL UNIVERSITY. Дата публикации: 2024-08-08.

Resistance memory device and memory apparatus and data processing system

Номер патента: US9214223B2. Автор: Hyung Dong Lee,Hyun Mi HWANG. Владелец: SK hynix Inc. Дата публикации: 2015-12-15.

Manufacturing method of semiconductor memory device

Номер патента: US09935116B2. Автор: Masaru Yano,Pin-Yao Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2018-04-03.

Resistance change nonvolatile memory device, semiconductor device, and method of operating resistance change nonvolatile memory device

Номер патента: US8767439B2. Автор: Masayuki Terai. Владелец: Renesas Electronics Corp. Дата публикации: 2014-07-01.

Semiconductor package and method for fabricating the same

Номер патента: US12033977B2. Автор: Seong Gwan Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

Circuit and method for correcting skew in a plurality of communication channels for communicating with a memory device, memory controller, system and method using the same, and memory test system and method using the same

Номер патента: TW201101322A. Автор: Young-Chan Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-01-01.

A memory device and method of performing access operations within such a memory device

Номер патента: GB201412312D0. Автор: . Владелец: Advanced Risc Machines Ltd. Дата публикации: 2014-08-27.

Nonvolatile memory cell and nonvolatile memory device comprising the same

Номер патента: US20210193207A1. Автор: Youngjin Cho,Soichiro Mizusaki,Jungho YOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-24.

Nonvolatile memory

Номер патента: US6437396B1. Автор: Kuo-Yu Chou. Владелец: Winbond Electronics Corp. Дата публикации: 2002-08-20.

Resistive memory device and method of programming the same

Номер патента: US11640842B2. Автор: Moonki Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-02.

Method For Reading And Writing Unreliable Memories And A Corresponding Memory Controller Device and Memory

Номер патента: US20220122686A1. Автор: Andreas Burg,Reza Ghanaatian. Владелец: Ecole Polytechnique Federale de Lausanne EPFL. Дата публикации: 2022-04-21.

Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device

Номер патента: US8848421B2. Автор: Kazuhiko Shimakawa,Koji Katayama,Ken Kawai. Владелец: Panasonic Corp. Дата публикации: 2014-09-30.

Method of forming variable resistance nonvolatile memory element and variable resistance nonvolatile memory device

Номер патента: JP5291248B2. Автор: 幸治 片山,一彦 島川,賢 河合. Владелец: Panasonic Corp. Дата публикации: 2013-09-18.

Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device

Номер патента: US8902629B2. Автор: Shunsaku Muraoka,Kazuhiko Shimakawa,Koji Katayama,Ken Kawai. Владелец: Panasonic Corp. Дата публикации: 2014-12-02.

Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device

Номер патента: WO2011096194A1. Автор: 高木　剛,飯島　光輝. Владелец: パナソニック株式会社. Дата публикации: 2011-08-11.

Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element

Номер патента: US8861257B2. Автор: Takumi Mikawa,Yukio Hayakawa,Takeki Ninomiya. Владелец: Panasonic Corp. Дата публикации: 2014-10-14.

A method of manufacturing a static semiconductor memory device and a bipolar transistor, and a semiconductor device having the same

Номер патента: KR970072408A. Автор: 히로키 혼다,토모히사 와다,히로토시 사토. Владелец: 미쓰비시 덴키 가부시끼가이샤. Дата публикации: 1997-11-07.

Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device

Номер патента: CN102301425B. Автор: 高木刚,饭岛光辉. Владелец: 松下电器产业株式会社. Дата публикации: 2013-10-30.

Non-volatile memory and methods of fabricating the same

Номер патента: WO2022260595A2. Автор: Wen Siang LEW,Putu Andhita DANANJAYA,Yuanmin DU,Siew Wei HOO,Weng Hong Lai. Владелец: NANYANG TECHNOLOGICAL UNIVERSITY. Дата публикации: 2022-12-15.

Nonvolatile memory device manufacturing method, nonvolatile memory element, and nonvolatile memory device

Номер патента: JP5079927B2. Автор: 志強 魏,剛 高木,光輝 飯島. Владелец: Panasonic Corp. Дата публикации: 2012-11-21.

Method for programming nonvolatile memory element, method for initializing nonvolatile memory element, and nonvolatile memory device

Номер патента: US20130314975A1. Автор: Takeshi Takagi,Koji Katayama. Владелец: Panasonic Corp. Дата публикации: 2013-11-28.

RESISTIVE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20150092474A1. Автор: LEE Sung Min. Владелец: . Дата публикации: 2015-04-02.

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Номер патента: US9142772B2. Автор: Sung Min Lee. Владелец: SK hynix Inc. Дата публикации: 2015-09-22.

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Номер патента: US8941090B2. Автор: Sung Min Lee. Владелец: SK hynix Inc. Дата публикации: 2015-01-27.

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Номер патента: US20210184111A1. Автор: Lain-Jong Li,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-06-17.

Resistive memory devices using a carbon-based conductor line and methods for forming the same

Номер патента: US20240155954A1. Автор: Lain-Jong Li,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-09.

Forming method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device

Номер патента: US8395925B2. Автор: Shunsaku Muraoka,Kazuhiko Shimakawa,Ken Kawai,Ryotaro Azuma. Владелец: Panasonic Corp. Дата публикации: 2013-03-12.

Nonvolatile memory element driving method and nonvolatile memory device

Номер патента: JP5490961B2. Автор: 覚 三谷,俊作 村岡,剛 高木. Владелец: Panasonic Corp. Дата публикации: 2014-05-14.

Nonvolatile memory element driving method and nonvolatile memory device

Номер патента: JPWO2012124314A1. Автор: 覚 三谷,俊作 村岡,剛 高木,村岡　俊作,三谷　覚,高木　剛. Владелец: Panasonic Corp. Дата публикации: 2014-07-17.

Methods of operating a magnetic random access memory device with low critical current density

Номер патента: KR100642638B1. Автор: 박재현,정원철. Владелец: 삼성전자주식회사. Дата публикации: 2006-11-10.

Methods of operating a magnetic random access memory device using a spin injection mechanism

Номер патента: KR100835275B1. Автор: 박재현,정원철,김기남,정홍식,정기태. Владелец: 삼성전자주식회사. Дата публикации: 2008-06-05.

Methods of operating a magnetic random access memory device having a heat-generating structure

Номер патента: KR100653708B1. Автор: 박재현,정원철. Владелец: 삼성전자주식회사. Дата публикации: 2006-12-04.

Nonvolatile memory element driving method and nonvolatile memory device

Номер патента: JPWO2011118185A1. Автор: 剛 高木,幸治 片山,高木　剛,飯島　光輝,光輝 飯島. Владелец: Panasonic Corp. Дата публикации: 2013-07-04.

Resistance memory device and memory apparatus and data processing system

Номер патента: US20140169067A1. Автор: Hyung Dong Lee,Hyun Mi HWANG. Владелец: SK hynix Inc. Дата публикации: 2014-06-19.

Semiconductor memory device and method for forming the same

Номер патента: US20230371259A1. Автор: Chung-Te Lin,Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of forming titanium aluminum nitride layerTiAlN by atomic layer deposition and phase change memory device having heating electrode fabricated by using the same

Номер патента: KR100604923B1. Автор: 이충만. Владелец: 삼성전자주식회사. Дата публикации: 2006-07-28.

Nonvolatile memory and method for driving nonvolatile memory

Номер патента: US20020190296A1. Автор: Yasuhiro Shimada. Владелец: Individual. Дата публикации: 2002-12-19.

A system and method of controlling a swarm of agents

Номер патента: WO2024042510A1. Автор: Irad Ben-Gal,Barouch MATZLIACH,Evgeny KAGAN. Владелец: Ariel Scientific Innovations Ltd.. Дата публикации: 2024-02-29.

Magnetic Memory Device Based on Perpendicular Exchange Bias and Method of Manufacturing Magnetic Memory Device

Номер патента: US20240032443A1. Автор: Ji-Sung Lee,Joon-Hyun Kwon,Han-saem Lee,Su-Jung Noh,Byong-Guk Park,Jaimin Kang,Soogil Lee,Dae-Kyu Koh. Владелец: Kia Corp. Дата публикации: 2024-01-25.

Memory system capable of calibrating output voltage level of semiconductor memory device and method of calibrating output voltage level of semiconductor memory device

Номер патента: US20130182513A1. Автор: Young-Jin Jeon,Young-Chul Cho,Yong-Cheol Bae,Yoon-Joo EOM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-18.

NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND NONVOLATILE MEMORY CELL ARRAYS INCLUDING THE NONVOLATILE MEMORY CELLS

Номер патента: US20210066585A1. Автор: LEE Sang Min. Владелец: . Дата публикации: 2021-03-04.

Nonvolatile memory element, production method therefor, nonvolatile memory unit, and design assistance method for nonvolatile memory element

Номер патента: CN103229299A. Автор: 三河巧,二宫健生,早川幸夫. Владелец: 松下电器产业株式会社. Дата публикации: 2013-07-31.

Reducing spin pumping induced damping of a free layer of a memory device

Номер патента: EP2342714A1. Автор: Xia Li,Seung H. Kang,Xiaochun Zhu. Владелец: Qualcomm Inc. Дата публикации: 2011-07-13.

RESISTIVE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20130336042A1. Автор: Hong Kwon,Lee Keun,KU Ja Chun,KANG Se Hun. Владелец: SK HYNIX INC.. Дата публикации: 2013-12-19.

Nonvolatile memory cells and arrays of nonvolatile memory cells

Номер патента: US9093368B2. Автор: David H. Wells,Zengtao T. Liu. Владелец: Micron Technology Inc. Дата публикации: 2015-07-28.

Resistive memory device, and memory apparatus and data processing system having the same

Номер патента: CN103514949A. Автор: 李�根,洪权,姜世勋,具滋春. Владелец: Hynix Semiconductor Inc. Дата публикации: 2014-01-15.

Methods of processing optical data generated by a distributed fiber optic sensing system that extends proximate hydrocarbon industrial infrastructure, and hydrocarbon industrial infrastructure that performs the methods

Номер патента: WO2024129326A1. Автор: Neal L. Adair,Brian C. Seabrook,Bryce K. CAMPBELL. Владелец: ExxonMobil Technology and Engineering Company. Дата публикации: 2024-06-20.

Methods of processing optical data generated by a distributed fiber optic sensing system that extends proximate hydrocarbon industrial infrastructure and hydrocarbon industrial infrastructure that performs the methods

Номер патента: WO2024129325A1. Автор: Neal L. Adair,Brian C. Seabrook,Bryce K. CAMPBELL. Владелец: ExxonMobil Technology and Engineering Company. Дата публикации: 2024-06-20.

Display data processing method of display device for determining gray-scale value using noise reduction function, display device, electronic device, and storage medium

Номер патента: US11710438B2. Автор: MING Chen,Wei Sun,Yan Sun,Xin Duan,Xiaomang Zhang,Lingyun SHI,Tiankuo SHI,YiFang Chu,Yifan HOU,Yanhui XI. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-07-25.

Method of manufacturing toner, toner obtained by method thereof, one-component developer, two-component developer, developing device, and image forming apparatus

Номер патента: US20100248114A1. Автор: YOSHIAKI Akazawa,Takashi Hara,Keiichi Kikawa,Yoshitaka Kawase,Yoritaka Tsubaki,Yoshinori Mutoh. Владелец: Individual. Дата публикации: 2010-09-30.

Method of manufacturing toner, toner obtained by method thereof, one-component developer, two-component developer, developing device and image forming apparatus

Номер патента: US20100248124A1. Автор: YOSHIAKI Akazawa,Takashi Hara,Keiichi Kikawa,Yoshitaka Kawase,Yoritaka Tsubaki,Yoshinori Mutoh. Владелец: Individual. Дата публикации: 2010-09-30.

Switchable lens device and 2- and 3-dimensional image display device using the same

Номер патента: US09869877B2. Автор: Sungwoo KIM. Владелец: LG Display Co Ltd. Дата публикации: 2018-01-16.

Method for removing noise of PET signal using filtering in PET-MRI fusion device and PET system in PET-MRI fusion device using the same

Номер патента: EP2413163A3. Автор: WEI Hu,Yong Choi,Jihoon Kang,Sangsu Kim,Key Jo Hong,Yoon Suk Huh,Hyun Keong Lim. Владелец: Industry University Cooperation Foundation of Sogang University. Дата публикации: 2012-05-23.

Method for removing noise of pet signal using filtering in pet-mri fusion device and pet system in pet-mri fusion device using the same

Номер патента: US20110270076A1. Автор: WEI Hu,Yong Choi,Jihoon Kang,Sangsu Kim,Key Jo Hong,Yoon Suk Huh,Hyun Keong Lim. Владелец: Industry University Cooperation Foundation of Sogang University. Дата публикации: 2011-11-03.

Rolling bearing protection device and vertical-axis tidal current energy generating device applying the same

Номер патента: US20210396202A1. Автор: JIA Li,FAN YANG,CHAO Chen,Zhenhua Wu,Lijun He,Qipeng Li,Huajun Xu,Fuwei ZHU,Xiaonan MIAO,Enle LIN,Hongyue TIAN,Chenhao WU,Yicheng DING,Dongfu ZHAO,Huafeng ZHONG,Dongfang HU,Yangjie MAO,Enjia XU,Yunlin XIE,Anpeng HE. Владелец: Zhejiang Zhoushan Lhd Energy Development Co Ltd. Дата публикации: 2021-12-23.

Memory device, display device equipped with memory device, drive method for memory device, and drive method for display device

Номер патента: US20120179923A1. Автор: Shuji Nishi,Yuhichiroh Murakami,Yasushi Sasaki,Seijirou Gyouten,Shige Furuta. Владелец: Sharp Corp. Дата публикации: 2012-07-12.

Fixing device and image forming method and image forming apparatus using the same

Номер патента: EP2009515A3. Автор: Yasuo Katano,Tsuneo Kurotori,Takuma Nakamura,Tomoaki Sugawara,Tomoyasu Hirasawa,Yuko Arizumi. Владелец: Ricoh Co Ltd. Дата публикации: 2012-09-19.

Flash memory device and method of operating the same

Номер патента: US20090040826A1. Автор: Jae Won Cha,Sam Kyu Won,Kwang Ho Baek. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-02-12.

Non-volatile memory, method of operating the same, memory system including the same, and method of operating the system

Номер патента: US20130135932A1. Автор: Sang Hoon Lee,Hyun Seok Kim,Sung-hwan Bae,Jae Yong Jeong,Jong-Nam Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-05-30.

Non-volatile memory, method of operating the same, memory system including the same, and method of operating the system

Номер патента: US20150070997A1. Автор: Sang Hoon Lee,Hyun Seok Kim,Sung-hwan Bae,Jae Yong Jeong,Jong-Nam Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-03-12.

Method of testing for a leakage current between bit lines of nonvolatile memory device

Номер патента: US20100302866A1. Автор: Jae Won Cha,Duck Ju Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-02.

Nonvolatile memory device using variable resistance material and method for driving the same

Номер патента: US20140119095A1. Автор: Yeong-Taek Lee,Sung Yeon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: WO2008038243A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP B.V.. Дата публикации: 2008-04-03.

A secure non-volatile memory device and a method of protecting data therein

Номер патента: EP2074629A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP BV. Дата публикации: 2009-07-01.

secure non-volatile memory device and method of protecting data therein

Номер патента: US20100002511A1. Автор: Guoqiao Tao,Steven V. E. S. Van Dijk. Владелец: NXP BV. Дата публикации: 2010-01-07.

Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein

Номер патента: US12014770B2. Автор: Ravindraraj Ramaraju. Владелец: R&d3 LLC. Дата публикации: 2024-06-18.

Method and device for reading data in a nonvolatile memory device based on cell counts of two states

Номер патента: US11972791B2. Автор: Jinyoung Kim,Sehwan Park,Jisang LEE,Hyojung Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-30.

Automatic regulation method for the reference sources in a non-volatile memory device and corresponding memory device

Номер патента: US7567470B2. Автор: Antonino Mondello,Michelangelo Pisasale. Владелец: Individual. Дата публикации: 2009-07-28.

Automatic regulation method for the reference sources in a non-volatile memory device and corresponding memory device

Номер патента: US20080013387A1. Автор: Antonino Mondello,Michelangelo Pisasale. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2008-01-17.

Method of storing data in a nonvolatile memory device and method of operating a nonvolatile memory device

Номер патента: KR101787612B1. Автор: 윤태현,이봉용,신경준,이해범,안정로,김의도,장흥국. Владелец: 삼성전자주식회사. Дата публикации: 2017-10-19.

Nonvolatile memory device, memory system, and operating methods

Номер патента: EP1501100A3. Автор: Jung-Hoon Park,Soo-Hwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-02-14.

Semiconductor integrated circuit and unstable bit detection method for the same

Номер патента: US20090168539A1. Автор: Tomonori Hayashi. Владелец: Elpida Memory Inc. Дата публикации: 2009-07-02.

Nonvolatile memory and a method of writing data thereto

Номер патента: US5400280A. Автор: Yoshimitsu Yamauchi. Владелец: Sharp Corp. Дата публикации: 1995-03-21.

Method of inputting address in a non volatile memory device and method of operating the same

Номер патента: KR100953062B1. Автор: 박영수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2010-04-13.

Dynamic sensing levels for nonvolatile memory devices

Номер патента: WO2023064548A1. Автор: Pawan Singh,Yoram Betser,Stefano Amato,Shivananda Shetty,Alexander Kushnarenko. Владелец: Infineon Technologies LLC. Дата публикации: 2023-04-20.

Dynamic sensing levels for nonvolatile memory devices

Номер патента: US11978528B2. Автор: Pawan Singh,Yoram Betser,Stefano Amato,Shivananda Shetty,Alexander Kushnarenko. Владелец: Infineon Technologies LLC. Дата публикации: 2024-05-07.

Dynamic sensing levels for nonvolatile memory devices

Номер патента: WO2023064548A9. Автор: Pawan Singh,Yoram Betser,Stefano Amato,Shivananda Shetty,Alexander Kushnarenko. Владелец: Infineon Technologies LLC. Дата публикации: 2024-05-10.

OPERATION METHOD OF CONTROLLER CONFIGURED TO CONTROL NONVOLATILE MEMORY DEVICE AND OPERATION METHOD OF STORAGE DEVICE

Номер патента: US20220172785A1. Автор: LEE Heewon,YOO Sangjin,LEE Yunjung,LEE Kwangwoo. Владелец: . Дата публикации: 2022-06-02.

Current generator for nonvolatile memory device and write and/or read currents calibrating method using the same

Номер патента: US20140321195A1. Автор: Artur ANTONYAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-10-30.

Nonvolatile semiconductor memory device

Номер патента: US20100149867A1. Автор: Hiroaki Tanaka,Hitoshi Shiga. Владелец: Individual. Дата публикации: 2010-06-17.

Memory device, Memory system including the memory device and Method of operating the memory device

Номер патента: KR102396743B1. Автор: 김종욱,박세창. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2022-05-12.

Method of making and operating nonvolatile semiconductor memory

Номер патента: KR100267870B1. Автор: 요시미츠 야마우찌. Владелец: 마찌다 가쯔히꼬. Дата публикации: 2000-10-16.

Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein

Номер патента: US11900990B2. Автор: Ravindraraj Ramaraju. Владелец: R&d3 LLC. Дата публикации: 2024-02-13.

Nonvolatile memory devices having wide operation range

Номер патента: US20170243640A1. Автор: Hoe Sam Jeong. Владелец: SK hynix Inc. Дата публикации: 2017-08-24.

Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein

Номер патента: US11783891B2. Автор: Ravindraraj Ramaraju. Владелец: R&D 3 LLC. Дата публикации: 2023-10-10.

Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein

Номер патента: US20240127884A1. Автор: Ravindraraj Ramaraju. Владелец: R&D 3 LLC. Дата публикации: 2024-04-18.

Nonvolatile memory device for suppressing read disturbances

Номер патента: US20170294232A1. Автор: Hoe Sam Jeong. Владелец: SK hynix Inc. Дата публикации: 2017-10-12.

METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE

Номер патента: US20140347935A1. Автор: KIM Moo Sung,Hahn Woo Ghee. Владелец: . Дата публикации: 2014-11-27.

METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE

Номер патента: US20150325304A1. Автор: KIM Moo Sung,Hahn Wook Ghee. Владелец: . Дата публикации: 2015-11-12.

Method of reading data in non-volatile memory device, and device thereof

Номер патента: US20120033502A1. Автор: Jae Hong Kim,Kyoung Lae Cho,Hee Seok EUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-02-09.

METHOD OF OPERATING MEMORY DEVICE ASSURING RELIABILITY AND MEMORY SYSTEM

Номер патента: US20150103599A1. Автор: Kim Jun Hee,YUN Hyun Sik,PARK Youn Won,OH Hee Tai. Владелец: . Дата публикации: 2015-04-16.

Timing signal delay for a memory device

Номер патента: US20220157365A1. Автор: Dong Pan,Zhi Qi Huang,Wei Lu CHU. Владелец: Micron Technology Inc. Дата публикации: 2022-05-19.

Nonvolatile memory circuit, semiconductor device, and method for reading nonvolatile memory

Номер патента: CN114913905A. Автор: 松本拓也. Владелец: Lanbishi Technology Co ltd. Дата публикации: 2022-08-16.

Reference voltage generation circuit for semiconductor memory device, memory reading circuit including same, and electronic information device including the same

Номер патента: US6707725B2. Автор: Yoshinao Morikawa. Владелец: Sharp Corp. Дата публикации: 2004-03-16.

Memory Controllers and User Systems Including the Same

Номер патента: US20140133241A1. Автор: Cheol Kwon,Iksung Park,In Bo Shim,Jong-Wook JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-15.

The programmed method and nonvolatile memory of a kind of nonvolatile memory

Номер патента: CN107358976A. Автор: 潘荣华,薛子恒,刘奎伟. Владелец: GigaDevice Semiconductor Beijing Inc. Дата публикации: 2017-11-17.

Electronic device, memory device, and write leveling method thereof

Номер патента: US20240265955A1. Автор: Shun-Ke WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

Electronic device, memory device, and write leveling method thereof

Номер патента: US12125557B2. Автор: Shun-Ke WU. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-22.

Semiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device

Номер патента: US20010022750A1. Автор: Yukihiro Urakawa. Владелец: Toshiba Corp. Дата публикации: 2001-09-20.

Multi-site testing of computer memory devices and serial io ports

Номер патента: US20140026006A1. Автор: Chinsong Sul. Владелец: Silicon Image Inc. Дата публикации: 2014-01-23.

Methods of testing repair circuits of memory devices

Номер патента: US20240290414A1. Автор: Taeyun Kim,Taewon Kim,Sanghee KANG,Kiho Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Memory device and memory system with sensor

Номер патента: US20150055403A1. Автор: Shinichiro Shiratake. Владелец: Toshiba Corp. Дата публикации: 2015-02-26.

Semiconductor memory devices and memory systems including the same

Номер патента: US20180122442A1. Автор: Jong-Pil Son,Seong-il O. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-03.

Semiconductor memory devices and methods of testing open failures thereof

Номер патента: US20170186496A1. Автор: Sang Kwon Lee. Владелец: SK hynix Inc. Дата публикации: 2017-06-29.

Device and method generating internal voltage in semiconductor memory device

Номер патента: US20090207674A1. Автор: Doo-Young Kim,Soo-bong Chang,Jung-Im Huh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-08-20.

Device and method generating internal voltage in semiconductor memory device

Номер патента: US20110090746A1. Автор: Doo-Young Kim,Soo-bong Chang,Jung-Im Huh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-04-21.

Semiconductor memory devices and methods of testing open failures thereof

Номер патента: US09997256B2. Автор: Sang Kwon Lee. Владелец: SK hynix Inc. Дата публикации: 2018-06-12.

Storage controller determining error count, method of operating the same, and method of operating storage device including the same

Номер патента: US11817170B2. Автор: Heewon Lee,Youngdeok SEO,Hyunkyo Oh,Woohyun Kang,Donghoo LIM,Hyuna Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-14.

Circuit for aligning command input data and semiconducter device including the same

Номер патента: US20240290365A1. Автор: Youngkwon JO. Владелец: Micron Technology Inc. Дата публикации: 2024-08-29.

Semiconductor memory devices and methods of testing open failures thereof

Номер патента: US20140156213A1. Автор: Sang Kwon Lee. Владелец: SK hynix Inc. Дата публикации: 2014-06-05.

Memory device and memory control method

Номер патента: US20110032781A1. Автор: Chun Shiah,Shi-Huei Liu. Владелец: Individual. Дата публикации: 2011-02-10.

Indicating a status of a memory built-in self-test for multiple memory device ranks

Номер патента: US12051477B2. Автор: Scott E. Schaefer. Владелец: Micron Technology Inc. Дата публикации: 2024-07-30.

Indicating a status of a memory built-in self-test for multiple memory device ranks

Номер патента: US20240347125A1. Автор: Scott E. Schaefer. Владелец: Micron Technology Inc. Дата публикации: 2024-10-17.

Nonvolatile memory device

Номер патента: US20090154280A1. Автор: Tetsuya Murakami,Kenichi Imamiya,Nobuyoshi Nara. Владелец: Toshiba Corp. Дата публикации: 2009-06-18.

Three dimensional memory device and method for manufacturing the same

Номер патента: US20240203463A1. Автор: Murat Kerem Akarvardar,Xiaochen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Staggering refresh address counters of a number of memory devices, and related methods, devices, and systems

Номер патента: US11887649B2. Автор: James S. Rehmeyer,Christopher G. Wieduwilt. Владелец: Micron Technology Inc. Дата публикации: 2024-01-30.

Write error counter for media management in a memory device

Номер патента: US20240321351A1. Автор: John Christopher M. Sancon. Владелец: Micron Technology Inc. Дата публикации: 2024-09-26.

Memory device training

Номер патента: US12027195B2. Автор: QI Dong,Xuesong Li. Владелец: Micron Technology Inc. Дата публикации: 2024-07-02.

Semiconductor memory device having a global data bus

Номер патента: US20050259499A1. Автор: Seok-Cheol Yoon,Kyoung-Nam Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-11-24.

Method of programming variable resistance nonvolatile memory element

Номер патента: US8867259B2. Автор: Shunsaku Muraoka,Kazuhiko Shimakawa,Ken Kawai,Yoshikazu Katoh. Владелец: Panasonic Corp. Дата публикации: 2014-10-21.

Semiconductor memory device and method of testing the same

Номер патента: US20110161606A1. Автор: Shuichi Tanaka. Владелец: Toshiba Corp. Дата публикации: 2011-06-30.

System and method for extending lifetime of memory device

Номер патента: US11972826B2. Автор: Jian-Hong Lin,Pei-Chun Liao,Dawei Heh,Yung-Huei Lee,Wenhsien Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-30.

Semiconductor memory device

Номер патента: US20010028594A1. Автор: Makoto Segawa,Takao Nakajima. Владелец: Toshiba Corp. Дата публикации: 2001-10-11.

NONVOLATILE MEMORY MODULE, MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY MODULE, AND CONTROLLING METHOD OF NONVOLATILE MEMORY MODULE

Номер патента: US20140071744A1. Автор: Lee Wonseok,MOON YOUNGKUG. Владелец: . Дата публикации: 2014-03-13.

SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND METHOD OF OPERATING MEMORY SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE AND CONTROLLER

Номер патента: US20210304837A1. Автор: KIM Jin Sub. Владелец: . Дата публикации: 2021-09-30.

Methods of operating a magnetic random access memory device and related devices and structures

Номер патента: US20060083054A1. Автор: Won-Cheol Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-04-20.

Method of operating sense amplifiers in a memory device, data sensing circuit for use in a memory device, and sense amplifier for use in a memory device

Номер патента: TW576017B. Автор: Saroj Pathak,Nianglamching Hangzo,James E Payne,Glen A Rosendale. Владелец: Atmel Corp. Дата публикации: 2004-02-11.

Methods of operating a magnetic random access memory device and related devices and structures

Номер патента: US7369428B2. Автор: Won-Cheol Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-06.

Semiconductor memory circuit, semiconductor memory module using the same, and acoustic signal reproducing system

Номер патента: US5329484A. Автор: Hideo Tsuiki. Владелец: NEC Corp. Дата публикации: 1994-07-12.

Semiconductor memory device and semiconductor system including the same

Номер патента: US20150098282A1. Автор: Geun-il Lee. Владелец: SK hynix Inc. Дата публикации: 2015-04-09.

RESISTIVE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20150348622A1. Автор: LEE Sung Min. Владелец: . Дата публикации: 2015-12-03.

Semiconductor memory device for deconcentrating refresh commands and system including the same

Номер патента: US20170278560A1. Автор: Dong Hak SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-28.

Write error counter for media management in a memory device

Номер патента: US20230352086A1. Автор: John Christopher M. Sancon. Владелец: Micron Technology Inc. Дата публикации: 2023-11-02.

Write error counter for media management in a memory device

Номер патента: US12014775B2. Автор: John Christopher M. Sancon. Владелец: Micron Technology Inc. Дата публикации: 2024-06-18.

Write method for writing to variable resistance nonvolatile memory element and variable resistance nonvolatile memory device

Номер патента: US20140185360A1. Автор: Kazuhiko Shimakawa,Ken Kawai,Yoshikazu Katoh. Владелец: Panasonic Corp. Дата публикации: 2014-07-03.

Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices

Номер патента: US20140231941A1. Автор: Sung-Chul Lee,Kee-Won Kim,Kwang-Seok Kim,Young-man Jang,Ung-hwan Pi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-08-21.

Writing method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device

Номер патента: US8325508B2. Автор: Shunsaku Muraoka,Kazuhiko Shimakawa,Ken Kawai,Ryotaro Azuma. Владелец: Panasonic Corp. Дата публикации: 2012-12-04.

Write method for writing to variable resistance nonvolatile memory element and variable resistance nonvolatile memory device

Номер патента: US9202565B2. Автор: Kazuhiko Shimakawa,Ken Kawai,Yoshikazu Katoh. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2015-12-01.

Nonvolatile memory element driving method and nonvolatile memory device

Номер патента: JP5966150B2. Автор: 好彦 神澤,俊作 村岡,剛 高木,村岡　俊作,神澤　好彦,高木　剛. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2016-08-10.

Method of performing access to a single-port memory device, memory access device, integrated circuit device and method of use of an integrated circuit device

Номер патента: WO2003090231A2. Автор: Corneliu Tobescu,Antonius Petrus Gerardus Welbers. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2003-10-30.

Method of performing access to a single-port memory device, memory access device, integrated circuit device and method of use of an integrated circuit device

Номер патента: US20050180254A1. Автор: Corneliu Tobescu,Antonius Petrus Welbers. Владелец: Individual. Дата публикации: 2005-08-18.

Indicating a status of a memory built-in self-test for multiple memory device ranks

Номер патента: US20240047004A1. Автор: Scott E. Schaefer. Владелец: Micron Technology Inc. Дата публикации: 2024-02-08.

Semiconductor memory device, memory system having semiconductor memory device, and method for testing memory system

Номер патента: TW200822126A. Автор: Jin-Soo Park,Dong-Jun Kim,Kae-Won Ha,Keun-Soo Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-16.

Circuit and method of controlling row active time, and semiconductor memory device having the same

Номер патента: KR100845140B1. Автор: 이지현,임종형. Владелец: 삼성전자주식회사. Дата публикации: 2008-07-09.

Method of performing access to a single-port memory device, memory access device, integrated circuit device and method of use of an integrated circuit device

Номер патента: TW200402067A. Автор: Corneliu Tobescu,Antonius Petrus Gerardus Welbers. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2004-02-01.

Method of performing access to a single-port memory device, memory access device, integrated circuit device and method of use of an integrated circuit device

Номер патента: TWI301275B. Автор: Tobescu Corneliu,Petrus Gerardus Welbers Antonius. Владелец: NXP BV. Дата публикации: 2008-09-21.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20210335402A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

Memory device having unity buffers with output current limiters

Номер патента: US20240170049A1. Автор: Ferdinando Bedeschi,Pierguido Garofalo,Michele Maria Venturini. Владелец: Micron Technology Inc. Дата публикации: 2024-05-23.

SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING SEMICONDUCTOR MEMORY DEVICES, AND OPERATING METHODS OF SEMICONDUCTOR MEMORY DEVICES

Номер патента: US20190130950A1. Автор: Kim Young-Hun,KIM Sihong. Владелец: . Дата публикации: 2019-05-02.

Nonvolatile memory and semiconductor device including nonvolatile memory

Номер патента: US7692999B2. Автор: Kiyoshi Kato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2010-04-06.

Recording material comprising ferroelectric layer, nonvolatile memory device comprising the same, and methods of writing and reading data for the memory device

Номер патента: KR100561858B1. Автор: 홍승범,김윤석,노광수. Владелец: 삼성전자주식회사. Дата публикации: 2006-03-16.

Recording material comprising ferroelectric layer, nonvolatile memory device comprising the same, and methods of writing and reading data for the memory device

Номер патента: KR20050022243A. Автор: 홍승범,김윤석,노광수. Владелец: 삼성전자주식회사. Дата публикации: 2005-03-07.

Recording method of optical disc device and method for determining whether there is abnormality in the same

Номер патента: CN100426389C. Автор: 安成晚. Владелец: Hitachi LG Data Storage Korea Inc. Дата публикации: 2008-10-15.

Method of measuring an adhesive force of interlayer adhesive layer in tensile mode for stacked semiconductor device and apparatus for measuring the same

Номер патента: US09945772B2. Автор: Dong Kil SHIN,Chul Keun YOON,Min Kyu KANG,Gyu Jei LEE. Владелец: Industry Academic Cooperation Foundation Of Yeungnam University. Дата публикации: 2018-04-17.

Test terminal negation circuit, method of negating a test singal, nonvolatile semiconductor memory device, and ic card

Номер патента: TWI296374B. Автор: Shuro Fukuhara. Владелец: Sharp Kk. Дата публикации: 2008-05-01.

Substrate attachment device of display device and method for manufacturing display device using the same

Номер патента: US8992278B2. Автор: Youngjo Ko. Владелец: LG Display Co Ltd. Дата публикации: 2015-03-31.

Monitoring system for manufacturing semiconductor device and monitoring method for manufacturing the semiconductor device using the same

Номер патента: US20240272559A1. Автор: Jeong-Gil Kim,Hyuck Shin,Dong-Hyub LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Display including lateral-structure multicolor light emitting device pixels and method of fabrication thereof

Номер патента: WO2024119056A1. Автор: WEI Ding,Saket Chadda,Zulal TEZCAN OZEL. Владелец: GLO Technologies LLC. Дата публикации: 2024-06-06.

Method of measuring an adhesive force of interlayer adhesive layer in tensile mode for stacked semiconductor device and apparatus for measuring the same

Номер патента: US10393646B2. Автор: Dong Kil SHIN,Chul Keun YOON,Min Kyu KANG,Gyu Jei LEE. Владелец: SK hynix Inc. Дата публикации: 2019-08-27.

Handler for testing semiconductor device and method for checking whether semiconductor device remains using the same

Номер патента: US09964588B2. Автор: Jae Hun Jeong,Sung Il KWON. Владелец: Techwing Co Ltd. Дата публикации: 2018-05-08.

Load driving device, and lighting apparatus and liquid crystal display device using the same

Номер патента: US09960677B2. Автор: Sadakazu Murakami. Владелец: ROHM CO LTD. Дата публикации: 2018-05-01.

Wafer conveying device and location sensing system and vision inspecting system having the same

Номер патента: TW201201314A. Автор: Chang-Hyun Kim,Kyung-Shik Lee,Jai-Young Lim. Владелец: Hanmi Semiconductor Co Ltd. Дата публикации: 2012-01-01.

METHOD OF MEASURING AN ADHESIVE FORCE OF INTERLAYER ADHESIVE LAYER IN TENSILE MODE FOR STACKED SEMICONDUCTOR DEVICE AND APPARATUS FOR MEASURING THE SAME

Номер патента: US20180195951A1. Автор: LEE Gyu Jei,SHIN Dong Kil,YOON Chul Keun,KANG Min Kyu. Владелец: . Дата публикации: 2018-07-12.

Method of controlling the amount of light to obtain an optimal image before, after, and during welding, and miniaturized and lightweight digital welding vision camera implementing the same

Номер патента: KR102495113B1. Автор: 조태근,김인균,정순임. Владелец: (주)로닉스. Дата публикации: 2023-02-06.

Method of transmission of a tactile signal to simulate physical contact between remote users, uses tactile screen on mobile telephone, and when both users are pressing the same part of the screen gives vibratory signal

Номер патента: FR2839840A1. Автор: Araujo Javier Sanchez. Владелец: NEC Technologies UK Ltd. Дата публикации: 2003-11-21.

Method of testing one or more optical devices, testing arrangement for testing one or more optical devices, and module for testing one or more optical devices

Номер патента: WO2024165137A1. Автор: Davide Colla. Владелец: Applied Materials, Inc.. Дата публикации: 2024-08-15.

LEAKAGE CURRENT DETECTION DEVICE, INTEGRATED CIRCUIT DEVICE HAVING THE SAME, AND METHOD OF DETECTING LEAKAGE CURRENT IN NONVOLATILE MEMORY DEVICE

Номер патента: US20160018454A1. Автор: JEON Byung-gil,KWON OH-SUK,SEO SUNG-WHAN,KIM DOO-GON. Владелец: . Дата публикации: 2016-01-21.

Method of improved surgical care with real-time devices

Номер патента: WO2024197040A1. Автор: John Cronin. Владелец: Know Labs, Inc.. Дата публикации: 2024-09-26.

Method for determining the technical condition of reinforced concrete beams of superstructures of operated motor road bridges by deflections thereof

Номер патента: RU2767165C2. Автор: Андрей Анатольевич Белый,Андрей Иванович Ященко. Владелец: Андрей Анатольевич Белый. Дата публикации: 2022-03-16.

Apparatus for and method of monitoring a navigation system

Номер патента: CA2029247A1. Автор: Herbert Kleiber. Владелец: Standard Elektrik Lorenz AG. Дата публикации: 1991-05-24.

Method of improved surgical care with real-time devices

Номер патента: US20240315606A1. Автор: John Cronin. Владелец: Know Labs Inc. Дата публикации: 2024-09-26.

Automated valet parking management device and automated valet parking management method

Номер патента: US20240255288A1. Автор: Tatsuya Sugano,Yuki Okamoto,Hiroya Chiba,Yuhei Oka. Владелец: Toyota Motor Corp. Дата публикации: 2024-08-01.

Sheet conveying device, and image forming apparatus and image forming system including the same

Номер патента: US09969592B2. Автор: Michio Takahashi,Kazuhiko KOWASE. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-05-15.

Compiling system and method of producing individually customized recording media

Номер патента: US5099422A. Автор: R. Scott Foresman,Michael G. Slade,John M. Moscicki,Kathleen B. Keilty,Terence P. Shek. Владелец: Datavision Technologies Corp. Дата публикации: 1992-03-24.

Compositions for and methods of detecting food toxins

Номер патента: WO2023240247A9. Автор: Zhou Chen,Justin Du Bois,JR. Daniel L. MINOR,Lauren O'CONNELL,Sandra ZAKRZEWSKA,Fayal ABDEREMANE-ALI,Aurora ALVAREZ-BUYLLA. Владелец: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY. Дата публикации: 2024-04-25.

Compositions for and methods of detecting food toxins

Номер патента: WO2023240247A3. Автор: Zhou Chen,Justin Du Bois,JR. Daniel L. MINOR,Lauren O'CONNELL,Sandra ZAKRZEWSKA,Fayal ABDEREMANE-ALI,Aurora ALVAREZ-BUYLLA. Владелец: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY. Дата публикации: 2024-03-28.

Metal-edged plectrum and method of manufacture thereof

Номер патента: US20150154946A1. Автор: Joseph A. Fortmuller. Владелец: Individual. Дата публикации: 2015-06-04.

A substrate supporting device, a substrate transfer mechanism, a polarizing film bonding device, and a liquid crystal display device manufacturing system having the same

Номер патента: TWI545681B. Автор: Rikiya Matsumoto. Владелец: Sumitomo Chemical Co. Дата публикации: 2016-08-11.

Helicopter with one main rotor and method of compensation of contra-rotating torque of main rotor of single-rotor helicopter

Номер патента: RU2086476C1. Автор: Алэн Ролле Филипп,Жерар Эглэн Поль. Владелец: Эрокоптер Франс. Дата публикации: 1997-08-10.

Method of measuring elongation of a fastener with ultrasound, performed by a power tool, and a power tool

Номер патента: US9625334B2. Автор: Erik Vilhelm Persson,Carl-Gustaf Carlin,Jarl-Olof Hulden. Владелец: ATLAS COPCO INDUSTRIAL TECHNIQUE AB. Дата публикации: 2017-04-18.

METHOD OF MEASURING AN ADHESIVE FORCE OF INTERLAYER ADHESIVE LAYER IN TENSILE MODE FOR STACKED SEMICONDUCTOR DEVICE AND APPARATUS FOR MEASURING THE SAME

Номер патента: US20160258862A1. Автор: LEE Gyu Jei,SHIN Dong Kil,YOON Chul Keun,KANG Min Kyu. Владелец: . Дата публикации: 2016-09-08.

A method of operating a hybrid medical imaging unit comprising a first high spatial resolution imaging device and a second high sensitivity nuclear medical imaging device

Номер патента: DE102006061078A1. Автор: Sebastian Dr. Schmidt,Diana Martin. Владелец: SIEMENS AG. Дата публикации: 2008-07-17.

Gas Sensor Fabrication method of catalyst-loaded porous metal oxide nanofiber metal oxide nanofiber networks prepared by transferring of catalyst-coated polymeric sacrificial colloid template, and gas sensors using the same

Номер патента: KR101714961B1. Автор: 김일두,최선진,구원태. Владелец: 한국과학기술원. Дата публикации: 2017-03-10.

Gas Sensor Fabrication method of catalyst-loaded porous metal oxide nanofiber metal oxide nanofiber networks prepared by transferring of catalyst-coated polymeric sacrificial colloid template, and gas sensors using the same

Номер патента: KR20160038185A. Автор: 김일두,최선진,구원태. Владелец: 한국과학기술원. Дата публикации: 2016-04-07.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US20070247913A1. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-10-25.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US20060097308A1. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-05-11.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US7361554B2. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-04-22.

Flash memory device with three-dimensional half flash structure and methods for forming the same

Номер патента: US20220359760A1. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same

Номер патента: US20090159952A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: Individual. Дата публикации: 2009-06-25.

Method of Fabricating Non-Volatile Memory Integrated Circuit Device and Non-Volatile Memory Integrated Circuit Device Fabricated Using the Same

Номер патента: US20080017915A1. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Methods of forming an apparatus, and related apparatuses, memory devices, and electronic systems

Номер патента: US20200194438A1. Автор: Yu Jen Lin,Oscar O. Enomoto,Chia Wei Tsai,Chin Chuan Liu. Владелец: Micron Technology Inc. Дата публикации: 2020-06-18.

Methods of fabricating fully silicide gate and semiconductor memory device having the same

Номер патента: US20070077740A1. Автор: Han Lee. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-04-05.

Method of fabricating a charge trap nand flash memory device

Номер патента: US20130087849A1. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2013-04-11.

Method of energy supply of components of wind-driven power plant, as well as power supply device and wind-driven power plant with such device

Номер патента: RU2743307C1. Автор: Кай БУСКЕР,Инго МАККЕНЗЕН,Штефан ГЕРТЬЕГЕРДЕС,Штефан ХЕЛЛЕР,Юрий ВИЛЬХЕЛЬМ. Владелец: Воббен Пропертиз Гмбх. Дата публикации: 2021-02-17.

Method of forming floating gate array of flash memory device

Номер патента: US20070141785A1. Автор: Jong Choi. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-21.

Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the same

Номер патента: US20030001186A1. Автор: Soon-Yong Kweon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2003-01-02.

Semiconductor memory device and manufacturing method and mask data preparing method for the same

Номер патента: US20020079529A1. Автор: Takeshi Watanabe,Akira Hoshino,Masayuki Hamada,Mitsunari Sukekawa. Владелец: Individual. Дата публикации: 2002-06-27.

Method of detecting a location of a mobile station in a separated-type radio access station, separated-type radio access station, and main unit for supporting the same

Номер патента: WO2009091149A1. Автор: Byeong Seog Pyo,Kwang Seob Yoo. Владелец: Posdata Co., Ltd.. Дата публикации: 2009-07-23.

Flash memory device with three-dimensional half flash structure and methods for forming the same

Номер патента: US11888074B2. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-30.

Flash Memory Device with Three Dimensional Half Flash Structure and Methods for Forming the Same

Номер патента: US20230253508A1. Автор: Yu-Chu Lin,Yi-Ling Liu,Keng-Ying Liao,Wen-Chih Chiang,Huai-Jen Tung,Chi-Chung JEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

Microelectronic devices and memory devices including vertically spaced transistors and storage devices, and related electronic systems

Номер патента: US20240357793A1. Автор: Fatma Arzum Simsek-Ege. Владелец: Micron Technology Inc. Дата публикации: 2024-10-24.

Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells

Номер патента: US8652909B2. Автор: Gurtej S. Sandhu,Scott E. Sills. Владелец: Micron Technology Inc. Дата публикации: 2014-02-18.

Method of manufacturing split gate type nonvolatile memory device

Номер патента: US20050095785A1. Автор: Seung-Beom Yoon,Hee-Seog Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-05-05.

Regulator rectifier device and a method for regulating an output voltage of the same

Номер патента: US09899866B2. Автор: Ramit VERMA. Владелец: Flash Electronics India Pvt Ltd. Дата публикации: 2018-02-20.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US12048149B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-23.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: WO2023108330A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2023-06-22.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: US12082414B2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-09-03.

Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same

Номер патента: US20020093035A1. Автор: Byeong-Yun Nam,Beom-jun Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-07-18.

Three-dimensional memory device having pocket structure in memory string and method for forming the same

Номер патента: US12029038B2. Автор: Yonggang YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-02.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: WO2024118277A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-06.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20240196619A1. Автор: Ryo KAMBAYASHI,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-13.

Three-dimensional memory device including a mid-stack source layer and methods for forming the same

Номер патента: US20240179908A1. Автор: Masanori Tsutsumi,Naohiro Hosoda,Kazuki ISOZUMI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-05-30.

Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same

Номер патента: US20040159871A1. Автор: Yoshiyuki Shibata. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2004-08-19.

Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same

Номер патента: US20020110971A1. Автор: Yoshiyuki Shibata. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-08-15.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US12120885B2. Автор: Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini,Chun-Chieh Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US20240365560A1. Автор: Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini,Chun-Chieh Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Memory device with high-mobility oxide semiconductor channel and methods for forming the same

Номер патента: WO2023224946A1. Автор: Milan PESIC. Владелец: Applied Materials, Inc.. Дата публикации: 2023-11-23.

Memory device with high-mobility oxide semiconductor channel and methods for forming the same

Номер патента: US20230380165A1. Автор: Milan PESIC. Владелец: Applied Materials Inc. Дата публикации: 2023-11-23.

Method of generating parity-check matrix, encoding/decoding method for low density parity-check code with variable information length and variable code rate and apparatus using the same

Номер патента: US20100325511A1. Автор: Seung-Chan Bang,Jong-Ee Oh,Sok-Kyu Lee,Minho Cheong,Heejung Yu,Yu-Ro Lee,Chanho YOON. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2010-12-23.

Measurement method of non-connected state user-side device, measurement apparatus of non-connected state user-side device and user-side device

Номер патента: US11792703B2. Автор: Xiaodong Yang. Владелец: Vivo Mobile Communication Co Ltd. Дата публикации: 2023-10-17.

Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same

Номер патента: US7535052B2. Автор: Bo-Un Yoon,Chang-ki Hong,Jun-Yong Kim,Byoung-Ho Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-05-19.

Method of and module for detecting electromagnetic waves of illegal wireless devices, and mobile device with electromagnetic wave detecting function using the same

Номер патента: WO2008066263A1. Автор: Ho Won Son. Владелец: Ho Won Son. Дата публикации: 2008-06-05.

Three-dimensional memory devices with stabilization structures between memory blocks and methods for forming the same

Номер патента: US12010834B2. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-11.

Measurement method of non-connected state user-side device, measurement apparatus of non-connected state user-side device and user-side device

Номер патента: US20230422116A1. Автор: Xiaodong Yang. Владелец: Vivo Mobile Communication Co Ltd. Дата публикации: 2023-12-28.

Measurement method of non-connected state user-side device, measurement apparatus of non-connected state user-side device and user-side device

Номер патента: US20220264396A1. Автор: Xiaodong Yang. Владелец: Vivo Mobile Communication Co Ltd. Дата публикации: 2022-08-18.

3d nand memory device devices and related electronic systems

Номер патента: US20230361083A1. Автор: Kunal R. Parekh,Akira Goda,Paolo Tessariol. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-11-09.

Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same

Номер патента: US11778818B2. Автор: Hiroaki Namba,Michiaki Sano,Ryo Mochizuki,Yasuo Kasagi,Junji Oh,Yujin TERASAWA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-10-03.

Method of manufacturing an organic light-emitting device and an organic light-emitting device manufactured by using the same

Номер патента: US11430971B2. Автор: Jonghyeok Lee,Heunggyu KIM,Seungmook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-08-30.

Method of manufacturing an organic light-emitting device and an organic light-emitting device manufactured by using the same

Номер патента: US20210280833A1. Автор: Jonghyeok Lee,Heunggyu KIM,Seungmook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-09-09.

Method of fabricating a charge trap NAND flash memory device

Номер патента: US9224873B2. Автор: Marcello Mariani,Giulio Albini,Paolo Tessariol,Umberto M. Meotto,Paola Bacciaglia. Владелец: Micron Technology Inc. Дата публикации: 2015-12-29.

Method of emitting an anti-collision light output from an unmanned aerial vehicle, anti-collision light for an unmanned aerial vehicle, and unmanned aerial vehicle comprising the same

Номер патента: US20210047051A1. Автор: Anil Kumar Jha,Andre Hessling-Von Heimendahl. Владелец: Goodrich Lighting Systems GmbH and Co KG. Дата публикации: 2021-02-18.

Method of manufacture of vertical split gate flash memory device

Номер патента: US6087222A. Автор: Shui-Hung Chen,Di-Son Kuo,Chrong Jung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2000-07-11.

Methods of fabricating a three-dimensional non-volatile memory device

Номер патента: US20150079742A1. Автор: Raghuveer S. Makala,Johann Alsmeier,Jayavel Pachamuthu,Yao-Sheng Lee. Владелец: SanDisk Technologies LLC. Дата публикации: 2015-03-19.

Systems and methods of decoding error correction code of a memory device with dynamic bit error estimation

Номер патента: US12009840B2. Автор: Yasuhiko Kurosawa,Avi STEINER,Ofir Kanter. Владелец: Kioxia Corp. Дата публикации: 2024-06-11.

Method for manufacturing PTC device and system for preventing overheating of planar heaters using the same

Номер патента: US8716633B2. Автор: Suk-Hwan Kang,Mun-Han Kim. Владелец: UNIPLATEK CO Ltd. Дата публикации: 2014-05-06.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: WO2022133990A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-06-30.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A3. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-02-14.

OLED display device and method for detecting and repairing packaging effects of the same

Номер патента: US10381603B2. Автор: JI Li,Lisen Wang,Tingting Zhao,Zhaozhe Xu. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2019-08-13.

Oled display device and method for detecting and repairing packaging effects of the same

Номер патента: US20180233705A1. Автор: JI Li,Lisen Wang,Tingting Zhao,Zhaozhe Xu. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-08-16.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US11871573B2. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-09.

Semiconductor memory device with air gaps between conductive features and method for preparing the same

Номер патента: US20210327882A1. Автор: Chun-Cheng Liao. Владелец: Nanya Technology Corp. Дата публикации: 2021-10-21.

Three-dimensional memory device having source-select-gate cut structures and methods for forming the same

Номер патента: US20240090227A1. Автор: Zhong Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-14.

Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

Номер патента: EP4290998A2. Автор: Jianzhong Wu,Zongke Xu,Jingjing Geng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-13.

Three-dimensional memory device with support structures in slit structures and method for forming the same

Номер патента: US20200395374A1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-12-17.

Cleaning agent composition for substrate for semiconductor devices and method for cleaning substrate for semiconductor devices using the same

Номер патента: US20240150681A1. Автор: Myungho Lee,Hye Ji KIM,Young Mee Kang,Yu Jin HEO,Jinho You,Hag Sung LEE,Narae YIM,Keon young KIM,Yun sun CHOI. Владелец: ENF Technology CO Ltd. Дата публикации: 2024-05-09.

Three-dimensional memory device with divided drain select gate lines and method for forming the same

Номер патента: EP4218056A1. Автор: Yan Gu,Zhiliang Xia,Di Wang,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-02.

Semiconductor memory device, method for fabricating semiconductor memory device, semiconductor integrated circuit and semiconductor memory integrated circuit

Номер патента: US20230209817A1. Автор: Kenichiro Kusano. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2023-06-29.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20230403850A1. Автор: Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US20240023341A1. Автор: Chun-Chieh Lu,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: WO2023239442A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Memory device including mixed oxide charge trapping materials and methods for forming the same

Номер патента: WO2023163734A1. Автор: Yanli Zhang,Peng Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-31.

Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same

Номер патента: US20220230917A1. Автор: Fumitaka Amano,Yuji TOTOKI,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-07-21.

Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same

Номер патента: US11877452B2. Автор: Zhixin Cui,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-01-16.

Memory device including composite metal oxide semiconductor channels and methods for forming the same

Номер патента: US20230363161A1. Автор: Peter Rabkin,Masaaki Higashitani. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-09.

Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same

Номер патента: US11805657B2. Автор: Chun-Chieh Lu,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

Номер патента: US20240074170A1. Автор: Takashi Yuda,Ippei Yasuda,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-02-29.

Three-dimensional memory device including composite backside metal fill structures and methods for forming the same

Номер патента: US20230402387A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Fumitaka Amano,Ryo KAMBAYASHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-12-14.

Memory device including mixed oxide charge trapping materials and methods for forming the same

Номер патента: US20230269939A1. Автор: Yanli Zhang,Peng Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-08-24.

Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

Номер патента: US20240213147A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-06-27.

Three-dimensional memory device with self-aligned memory block isolation and methods for forming the same

Номер патента: WO2024144916A1. Автор: Naohiro Hosoda,Tatsuya Hinoue. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-04.

Silicon optoelectronic device and optical signal input and/or output apparatus using the same

Номер патента: US7157741B2. Автор: Eun-kyung Lee,Byoung-Lyong Choi,Jun-Young Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-02.

Holdout devices and cover assemblies including safety rails and methods incorporating the same

Номер патента: CA3047935C. Автор: Harry George Yaworski,Edward O'Sullivan,George W. Pullium, Iii,Mahmoud K. Seraj. Владелец: Tyco Electronics Corp. Дата публикации: 2021-10-19.

Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

Номер патента: US11239253B2. Автор: Fei Zhou,Raghuveer S. Makala,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-02-01.

Bonded semiconductor devices having programmable logic device and dynamic random-access memory and methods for forming the same

Номер патента: US11996389B2. Автор: Jun Liu,Weihua Cheng. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-28.

Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

Номер патента: US20200395380A1. Автор: Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Adarsh RAJASHEKHAR. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-12-17.

Devices and systems configured to fit around a tissue using the same

Номер патента: US09980841B2. Автор: Ghassan S. Kassab,Thomas A. Kramer. Владелец: CVDevices LLC. Дата публикации: 2018-05-29.

Method of manufacturing electrically heated catalyst device, metal thin plate for electrode of electrically heated catalyst device, and electrically heated catalyst device

Номер патента: US11713703B2. Автор: Takahiro Sadamitsu. Владелец: Toyota Motor Corp. Дата публикации: 2023-08-01.

Method of manufacturing electrically heated catalyst device, metal thin plate for electrode of electrically heated catalyst device, and electrically heated catalyst device

Номер патента: US20210381418A1. Автор: Takahiro Sadamitsu. Владелец: Toyota Motor Corp. Дата публикации: 2021-12-09.

Method of mixing between a primary flow and a secondary flow in a turbine engine, corresponding device and turbine engine

Номер патента: US9709002B2. Автор: Guillaume Pouyau,Nicolas Sirvin. Владелец: SNECMA SAS. Дата публикации: 2017-07-18.

Fixing device and passenger device as well as carrying device using the same

Номер патента: US20220234640A1. Автор: Xiaohong Xiao,Xiuping Fu. Владелец: Wonderland Switzerland AG. Дата публикации: 2022-07-28.

Memory devices and methods of forming the same

Номер патента: WO2024211099A1. Автор: Tong Liu,BALASUBRAMANIAN Pranatharthiharan,Sony Varghese,Anand N. Iyer,Zhijun CHEN. Владелец: Applied Materials, Inc.. Дата публикации: 2024-10-10.

Semiconductor memory devices

Номер патента: US12101944B2. Автор: Eng Huat Toh,Shyue Seng Tan,Desmond Jia Jun Loy. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-09-24.

Error correction code (ecc) circuit including low-density parity-check decoder in adaptive operation mode, operating method of the ecc circuit, and memory controller including the ecc circuit

Номер патента: US20240356565A1. Автор: Dongmin Shin,Kangseok Lee,Youngjun Hwang,Bohwan Jun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-24.

Error correction code (ecc) circuit including low-density parity-check decoder in adaptive operation mode, operating method of the ecc circuit, and memory controller including the ecc circuit

Номер патента: EP4456436A1. Автор: Dongmin Shin,Kangseok Lee,Youngjun Hwang,Bohwan Jun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-30.

Interconnects for stacked non-volatile memory device and method

Номер патента: US20120112155A1. Автор: Scott Brad Herner. Владелец: Crossbar Inc. Дата публикации: 2012-05-10.

Non-volatile memory cell and method of manufacture

Номер патента: US20160163721A1. Автор: Gregory James Scott,Thierry Coffi Herve Yao. Владелец: Deutsche Bank AG New York Branch. Дата публикации: 2016-06-09.

Semiconductor memory devices

Номер патента: US20220208856A1. Автор: Eng Huat Toh,Shyue Seng Tan,Xinshu CAI. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2022-06-30.

Semiconductor memory device and method of manufacturing the semiconductor memory device

Номер патента: US20240237342A1. Автор: Dong Uk Lee,Hae Chang Yang. Владелец: SK hynix Inc. Дата публикации: 2024-07-11.

Non-volatile memory device and manufacturing method thereof

Номер патента: US20150311299A1. Автор: Kyung Min Kim,Jung Goo Park,Jeong Ho Cho,Se Woon KIM. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2015-10-29.

Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor device, display device, memory device, and electronic appliance

Номер патента: US09947802B2. Автор: Masayuki Kimura,Yukiko TOJO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-17.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US12048155B2. Автор: Eun Seok Choi,Seo Hyun Kim,Dong Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2024-07-23.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20240341098A1. Автор: Eun Seok Choi,Seo Hyun Kim,Dong Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2024-10-10.

Systems and devices including fin transistors and methods of using, making, and operating the same

Номер патента: EP2245658A1. Автор: Werner Juengling. Владелец: Micron Technology Inc. Дата публикации: 2010-11-03.

Systems and devices including fin transistors and methods of using, making, and operating the same

Номер патента: WO2009105315A1. Автор: Werner Juengling. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2009-08-27.

3D Stackable Memory and Methods of Manufacture

Номер патента: US20240268128A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Semiconductor memory device and manufacturing method of semiconductor memory device

Номер патента: US20240334704A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-10-03.

3d memory device and method of forming seal structure

Номер патента: US20240234339A9. Автор: Teng-Hao Yeh,Cheng-Yu Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2024-07-11.

Three-dimensional nand memory device and fabrication method

Номер патента: US20240237338A9. Автор: Wei Xu,Zongliang Huo,Lei Xue,Longxiang Yan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-07-11.

Sputtering target and method of manufacturing the same, and memory device manufacturing method

Номер патента: US20220162742A1. Автор: Kazuhiro Ohba,Katsuhisa Aratani,Shuichiro Yasuda,Hiroaki Sei. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-05-26.

Semiconductor memory device and manufacturing method of semiconductor memory device

Номер патента: US12035533B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-09.

Memory element and method of manufacturing the same, and memory device

Номер патента: US20120145987A1. Автор: Shuichiro Yasuda,Hiroaki Sei. Владелец: Sony Corp. Дата публикации: 2012-06-14.

Spin orbit torque materials, magnetic memory device including the same, and method for fabricating the spin orbit torque materials

Номер патента: EP4447644A1. Автор: Daesu Lee,Won Joon CHO,Yongjoo JO. Владелец: POSTECH Research and Business Development Foundation. Дата публикации: 2024-10-16.

Spin orbit torque materials, magnetic memory device including the same, and method for fabricating the spin orbit torque materials

Номер патента: US20240349623A1. Автор: Daesu Lee,Won Joon CHO,Yongjoo JO. Владелец: Pohang University of Science and Technology Foundation POSTECH. Дата публикации: 2024-10-17.

Semiconductor device and method of forming the same

Номер патента: US12074021B2. Автор: Chi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Nonvolatile memory, semiconductor device and method of manufacturing the same

Номер патента: US20020113268A1. Автор: Kiyoshi Kato,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-08-22.

Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and method of manufacturing flat panel display device provided with the nonvolatile memory device

Номер патента: US8216900B2. Автор: Dae Young Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2012-07-10.

Method of manufacturing thin-film transistor, thin-film transistor, and display apparatus including the same

Номер патента: US20160133725A1. Автор: Hyunduck CHO,Youngjun Chung. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-05-12.

Semiconductor memory device and method for manufacturing the same

Номер патента: US20020033495A1. Автор: Jeong-Seok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-03-21.

Semiconductor memory device and method for manufacturing the same

Номер патента: US20020089037A1. Автор: Jeong-Seok Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-07-11.

Device and method of data transfer

Номер патента: RU2633370C1. Автор: Янь Чэнь,Шуньцин ЧЖАН,Юньган ЛИ. Владелец: Хуавэй Текнолоджиз Ко., Лтд.. Дата публикации: 2017-10-12.

Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

Номер патента: US11758722B2. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Manufacturing method of carbide

Номер патента: US20220123277A1. Автор: Yu-Lun Chueh,Shu-Chi Wu,Yi-Chung Wang. Владелец: National Tsing Hua University NTHU. Дата публикации: 2022-04-21.

Resistive memory device and method for manufacturing the same

Номер патента: US20230337556A1. Автор: Chuan-Fu Wang,Shu-Hung Yu,Chun-hung Cheng. Владелец: United Microelectronics Corp. Дата публикации: 2023-10-19.

Heterocyclic compound, organic light emitting device and composition for organic material layer comprising the same

Номер патента: US20240251666A1. Автор: Dong Jun Kim,Sol Lee,Dae Hyuk Choi,Jun tae Mo. Владелец: LT Materials Co Ltd. Дата публикации: 2024-07-25.

Devices and methods of packaging semiconductor devices

Номер патента: US09935084B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Method of forming a device of composite material, a pattern, a device

Номер патента: WO2021052596A1. Автор: Daniel Hüsler,Rainer Faißt. Владелец: Adultimum Ag. Дата публикации: 2021-03-25.

Structure and Method of Forming a Joint Assembly

Номер патента: US20240282743A1. Автор: Chen-Hua Yu,Hsien-Wei Chen,Der-Chyang Yeh,An-Jhih Su,Ying-Ju Chen,Chi-Hsi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

High integration memory device, memory module mounting the memory device, and control method of the memory module

Номер патента: TW526498B. Автор: Jun-Young Jeon,Chul-Hong Park,Eun-Youp Kong,Hai-Jeong Shon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-04-01.

Semiconductor device and its manufacturing method

Номер патента: RU2544887C2. Автор: Хидео КОБАЯСИ,Масанори ОГУРА,Тецунобу КОТИ,Масаси КИТАНИ. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2015-03-20.

Method of making a magnetoresistance element

Номер патента: US3584377A. Автор: Toshiyuki Yamada. Владелец: Sony Corp. Дата публикации: 1971-06-15.

Devices and methods of communication

Номер патента: WO2024207300A1. Автор: Wei Chen,Zhen He,Gang Wang,Rao SHI. Владелец: NEC Corporation. Дата публикации: 2024-10-10.

Non-volatile semiconductor memory device and method of manufacturing the same, volatile semiconductor memory device and method of manufacturing the same, and semiconductor memory device incorporating the non-volatile semiconductor memory device with the volatile semiconductor memory device and method of manufacturing thereof

Номер патента: KR100391559B1. Автор: 요시카와구니요시. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2003-07-12.

Method of Manufacturing an Integrated Circuit

Номер патента: US20090159558A1. Автор: Stéphane CHOLET. Владелец: Individual. Дата публикации: 2009-06-25.

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device

Номер патента: US7256447B2. Автор: Sang-Min Shin,Won-joo Kim,Sun-Ae Seo,Choong-rae Cho,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-08-14.

Single Gate Nonvolatile Memory Cell With Transistor and Capacitor

Номер патента: US20090256184A1. Автор: Cheng-Chi Lin,Shyi-Yuan Wu,Shih-Chin Lien,Chin-Pen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2009-10-15.

Semiconductor memory device and manufacturing method and mask data preparing method for the same

Номер патента: TW478048B. Автор: Takeshi Watanabe,Akira Hoshino,Masayuki Hamada,Mitsunari Sukekawa. Владелец: Nippon Electric Co. Дата публикации: 2002-03-01.

Gas Venting Device, and Battery Module and Battery Pack Including the Same

Номер патента: US20240322353A1. Автор: Yeon Chul Choo,Doo Seung KIM,II Suk Sim. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-09-26.

Memory device having hybrid insulating layer and method for preparing same

Номер патента: US10529936B2. Автор: Youngkyoo Kim,Hawjeong Kim,Chulyeon Lee. Владелец: Industry Academic Cooperation Foundation of KNU. Дата публикации: 2020-01-07.

Fabrication method of nanowires containing nanoparticles and nonvolatile memory devices utilizing the same

Номер патента: KR101014596B1. Автор: 정재훈,김태환,이정용,신재원. Владелец: 한양대학교 산학협력단. Дата публикации: 2011-02-16.

Semiconductor device having an expanded storage node contact and method for fabricating the same

Номер патента: US20100109075A1. Автор: Tae O Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-05-06.

Semiconductor device having an expanded storage node contact and method for fabricating the same

Номер патента: US20110076835A1. Автор: Tae O. Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-03-31.

Method and system for providing reducing thinning of field isolation structures in a flash memory device

Номер патента: US20020158284A1. Автор: Hyeon-Seag Kim. Владелец: Individual. Дата публикации: 2002-10-31.

Methods of operation of smart lighting systems

Номер патента: US10537003B2. Автор: Jong-Hyun Kim,Ho-chan CHO,Sung-Hee YOU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-14.

3-d nonvolatile memory device, memory system, and method of manufacturing the 3-d nonvolatile memory device

Номер патента: CN103165620A. Автор: 全裕男. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-06-19.

Nonvolatile semiconductor memory device and method of fabrication of the same

Номер патента: US5726470A. Автор: Yasuo Sato. Владелец: Nippon Steel Corp. Дата публикации: 1998-03-10.

Semiconductor memory devices and methods of fabricating the same

Номер патента: US8390075B2. Автор: Weon-Ho Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-03-05.

Structure of 3D NAND memory device and method of forming the same

Номер патента: US11856776B2. Автор: Li Hong XIAO,Li Xun Gu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-12-26.

V-grooved vertical channel-type 3d semiconductor memory device and method for manufacturing the same

Номер патента: US20180182851A1. Автор: Jan Van Houdt. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-06-28.

Structure of 3d nand memory device and method of forming the same

Номер патента: US20220013541A1. Автор: Li Hong XIAO,Li Xun Gu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-13.

Non-volatile split gate memory cells with integrated high k metal control gates and method of making

Номер патента: EP3721433A1. Автор: Chun-Ming Chen,Nhan Do,Jeng-Wei Yang,Man-Tang Wu,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2020-10-14.

3d flash memory device and method of manufacturing the same

Номер патента: US20230413552A1. Автор: Hang-Ting Lue,Wei-Chen Chen,Cheng-Yu Lee,Teng Hao Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2023-12-21.

Sidewall insulated resistive memory devices

Номер патента: US20180301507A1. Автор: Daniel Bedau. Владелец: Western Digital Technologies Inc. Дата публикации: 2018-10-18.

Microwave heating device and method for manufacturing semiconductor packaging using the same

Номер патента: US20230326810A1. Автор: Ho-gyeong Yun,Ki Seok Jang,JiHo JOO,Jin Hyuk OH,Kwang-Seong Choi,Yong Sung Eom,Seok-Hwan Moon,Gwang-Mun Choi,Chanmi LEE. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2023-10-12.

Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same

Номер патента: US20080057654A1. Автор: Jihong Chen,Amitabh Jain,Srinivasan Chakravarthi,Eddie H. Breashears. Владелец: Texas Instruments Inc. Дата публикации: 2008-03-06.

Three-dimensional memory device with corrosion-resistant composite spacer

Номер патента: US20210104540A1. Автор: LU Zhang,Bo Xu,Chuan Yang,Ping Yan,Jing Gao,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-04-08.

Flash memory device with split gate over recessed channel, flash memory array using the same device and fabricating method of the same

Номер патента: KR100866261B1. Автор: 박세환,박병국,박일한. Владелец: 재단법인서울대학교산학협력재단. Дата публикации: 2008-10-31.

Method of making contact alignment for nonvolatile memory devices

Номер патента: US5448091A. Автор: Frank R. Bryant,Tsiu C. Chan. Владелец: SGS Thomson Microelectronics Inc. Дата публикации: 1995-09-05.

Nano semiconductor switch device using electromechanism of cabon nano tube and method of fabricating the same and semiconductor memory device using electromechanism of cabon nano tube and method for driving the same

Номер патента: KR100652410B1. Автор: 이선우,최영문. Владелец: 삼성전자주식회사. Дата публикации: 2006-12-01.

Separator sealing device and unit cell manufacturing device using same

Номер патента: EP4184630A1. Автор: Sang Wook Kim,Sung Chul Park,Dong Hyeuk PARK,Ju Hyung Kim. Владелец: LG Energy Solution Ltd. Дата публикации: 2023-05-24.

Three-dimensional memory device including coaxial double contact via structures and methods for forming the same

Номер патента: US20240306392A1. Автор: Naoki Takeguchi,Kento Kitamura,Kentaro Yoshino,Ryo MIZUTSU. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Methods Of Forming A Nonvolatile Memory Cell And Methods Of Forming An Array Of Nonvolatile Memory Cells

Номер патента: US20140120686A1. Автор: Sandhu Gurtej S.,Sills Scott E.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-05-01.

NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD, AND NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD

Номер патента: US20140197368A1. Автор: Ito Satoru,Himeno Atsushi,Hayakawa Yukio,Mikawa Takumi,Yoneda Shinichi. Владелец: Panasonic Corporation. Дата публикации: 2014-07-17.

Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method

Номер патента: US9680093B2. Автор: Takumi Mikawa,Satoru Ito,Yukio Hayakawa,Atsushi Himeno,Shinichi Yoneda. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2017-06-13.

Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells

Номер патента: US8431458B2. Автор: Gurtej S. Sandhu,Scott E. Sills. Владелец: Micron Technology Inc. Дата публикации: 2013-04-30.

Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells

Номер патента: US9034710B2. Автор: Gurtej S. Sandhu,Scott E. Sills. Владелец: Micron Technology Inc. Дата публикации: 2015-05-19.

Stacked bit line dual word line nonvolatile memory

Номер патента: US20140120665A1. Автор: Hsiang-Lan Lung. Владелец: Macronix International Co Ltd. Дата публикации: 2014-05-01.

Stacked Bit Line Dual Word Line Nonvolatile Memory

Номер патента: US20110241078A1. Автор: Hsiang-Lan Lung. Владелец: Macronix International Co Ltd. Дата публикации: 2011-10-06.

Stacked bit line dual word line nonvolatile memory

Номер патента: US20160365349A1. Автор: Hsiang-Lan Lung. Владелец: Macronix International Co Ltd. Дата публикации: 2016-12-15.

Epitaxial Growth Process for Semiconductor Device and Semiconductor Device Comprising Epitaxial Layer Formed By Adopting the Same

Номер патента: US20210398805A1. Автор: Qin Deng,Huojin Tu,Zhanyuan Hu,Jueyang Liu. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2021-12-23.

Method of forming a contact in a flash memory device

Номер патента: GB2427755B. Автор: Dominik Olligs,Nicolas Nagel. Владелец: Qimonda AG. Дата публикации: 2007-10-10.

X-ray device and method for controlling X-ray irradiation area using the same

Номер патента: US09974504B2. Автор: Byeong Won Lee,Jae Hwa Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

Semiconductor devices and methods of making them

Номер патента: GB972511A. Автор: . Владелец: Western Electric Co Inc. Дата публикации: 1964-10-14.

Signal switching method of a TV-VCR combination having two tuners

Номер патента: US5193009A. Автор: Keun Park. Владелец: Gold Star Co Ltd. Дата публикации: 1993-03-09.

Non-volatile memory device having asymmetrical control gates surrounding a floating gate and manufacturing method thereof

Номер патента: US9502257B2. Автор: Kyung Min Kim,Jung Goo Park,Jeong Ho Cho,Se Woon KIM. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2016-11-22.

Semiconductor modules and methods of forming the same

Номер патента: US20160079154A1. Автор: Yifeng Wu,Sung Hae Yea. Владелец: Transphorm Inc. Дата публикации: 2016-03-17.

Method of manufacturing and operating a non-volatile memory cell

Номер патента: US20170345833A1. Автор: Gregory James Scott,Thierry Coffi Herve Yao. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-11-30.

Semiconductor modules and methods of forming the same

Номер патента: EP2789011A2. Автор: Yifeng Wu,Sung Hae Yea. Владелец: Transphorm Inc. Дата публикации: 2014-10-15.

Image acquisition device and method for adjusting focus position thereof

Номер патента: US12101538B2. Автор: Chang Woo Kang. Владелец: Vieworks Co Ltd. Дата публикации: 2024-09-24.

RESISTIVE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20140054536A1. Автор: LEE Sung Min. Владелец: SK HYNIX INC.. Дата публикации: 2014-02-27.

RESISTIVE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20150140775A1. Автор: LEE Sung Min. Владелец: . Дата публикации: 2015-05-21.

differential codebook for a wireless network, minimum beam forming system using the same, and method of reducing a quantization error in a minimal beam forming system for a differential for a wireless network, minimum beam forming system minimum beam using the same, and method of reducing a quantization error in a minimum beam forming system for a wireless network using the same

Номер патента: BRPI1006754A2. Автор: Li Qinghua,Zhu Yuan,E Lin Xintian. Владелец: Intel Corp. Дата публикации: 2017-05-30.

Phase change memory devices using an energy conversion layer, memory arrays and systems comprising the same, and methods of manufacturing and using the same

Номер патента: KR101057543B1. Автор: 준 리우,마이크 바이올렛,존 댈리. Владелец: 마이크론 테크놀로지, 인크. Дата публикации: 2011-08-18.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US11903208B2. Автор: Nam Jae LEE,Nam Kuk KIM. Владелец: SK hynix Inc. Дата публикации: 2024-02-13.

3D Stackable Memory and Methods of Manufacture

Номер патента: US20230345741A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Semiconductor memory device and manufacturing method thereof

Номер патента: US20230240086A1. Автор: Tae Hoon Kim,Si Jung YOO. Владелец: SK hynix Inc. Дата публикации: 2023-07-27.

3D stackable memory and methods of manufacture

Номер патента: US11991888B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Memory devices having vertical transistors and fabricating methods thereof

Номер патента: US20230380142A1. Автор: He Chen,WEI Liu,Yanhong Wang,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-23.

A semiconductor device, and a generator and a power conversion device using the same

Номер патента: TWI582942B. Автор: Shinichi Kurita,Mutsuhiro Mori,Junichi Sakano,Shigeru Sugayama,Tetsuya Ishimaru,Kohhei ONDA. Владелец: Hitachi Power Semiconductor Device Ltd. Дата публикации: 2017-05-11.

Three-dimensional memory device with support structures in slit structures and method for forming the same

Номер патента: EP3909079B1. Автор: Wei Xu,Pan Huang,Ping Yan,Zongliang Huo,Wenbin Zhou,Haohao YANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-23.

Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof

Номер патента: US20090085094A1. Автор: Jaegab LEE,Jang-Sik Lee,Jinhan Cho. Владелец: Industry Academic Cooperation Foundation of Kookmin University. Дата публикации: 2009-04-02.

Three-dimensional nand memory device and fabrication method

Номер патента: US20240015973A1. Автор: Wei Xu,Bo Xu,Zongliang Huo,Lei Xue,Longxiang Yan,Fazhan WANG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-01-11.

Three-dimensional nand memory device and fabrication method

Номер патента: US20240138148A1. Автор: Wei Xu,Zongliang Huo,Lei Xue,Longxiang Yan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-25.

3d memory device and method of forming seal structure

Номер патента: US20240136305A1. Автор: Teng-Hao Yeh,Cheng-Yu Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2024-04-25.

Semiconductor device and method of forming the same

Номер патента: US20220301861A1. Автор: Chi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-22.

Semiconductor device and method of forming the same

Номер патента: US20210035800A1. Автор: Chi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-02-04.

Semiconductor device and method of forming the same

Номер патента: US20240014034A1. Автор: Chi-Chang Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-11.

Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

Номер патента: EP3931868A1. Автор: Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-01-05.

METHOD OF OBTAINING A MAIN KEY FROM A MEMORY DEVICE, METHOD OF GENERATING AUTHENTICATION INFORMATION FOR A MEMORY DEVICE, AN EXTERNAL DEVICE AND SYSTEM ICLUDING THE EXTERNAL DEVICE

Номер патента: US20130156195A1. Автор: KIM MIN-KWON,LEE JAE-BUM,JANG Hyoung-Suk,KIM Seok-Heon. Владелец: . Дата публикации: 2013-06-20.

METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME

Номер патента: US20160133831A1. Автор: KIM Ki Woong,Lim Woo Chang,LEE YunJae,Lee Joonmyoung,PARK Yongsung. Владелец: . Дата публикации: 2016-05-12.

Communication system and method of its control

Номер патента: RU2556081C1. Автор: Шэн ЛЮ,Хун ЧЭН. Владелец: Хуавэй Текнолоджиз Ко., Лтд.. Дата публикации: 2015-07-10.

Method of preparing oxide superconducting wire

Номер патента: CA2063285C. Автор: Kenichi Sato,Takeshi Hikata. Владелец: Takeshi Hikata. Дата публикации: 1992-09-21.

Method of preparing oxide superconducting wire

Номер патента: US5434130A. Автор: Kenichi Sato,Takeshi Hikata. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1995-07-18.

Method of and Module for detecting electromagnetic waves of illegal wireless devices, and Mobile device with electromagnetic wave detecting function using the same

Номер патента: KR100840337B1. Автор: 손호원. Владелец: 손호원. Дата публикации: 2008-06-20.

In-vehicle entertainment system having functionality of operation interface switchable

Номер патента: US11825009B2. Автор: Ren-Yuan Yu,Hsing-Yun HSIEH,Ting-Ta CHIEN. Владелец: Prolific Technology Inc. Дата публикации: 2023-11-21.

Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector

Номер патента: US11805643B2. Автор: Qian Tao,Enbo Wang,Yushi Hu,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-31.

Method of and module for detecting electromagnetic waves of illegal wireless devices, and mobile device with electromagnetic wave detecting function using the same

Номер патента: TW200830225A. Автор: Ho-Won Son. Владелец: Ho-Won Son. Дата публикации: 2008-07-16.

Modular ups and working method of modular ups

Номер патента: EP3952057A1. Автор: Chuntao Zhang. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2022-02-09.

In-vehicle entertainment system having functionality of operation interface switchable

Номер патента: US20220303385A1. Автор: Ren-Yuan Yu,Hsing-Yun HSIEH,Ting-Ta CHIEN. Владелец: Prolific Technology Inc. Дата публикации: 2022-09-22.

Three-dimensional memory device and method for forming the same

Номер патента: US20200273872A1. Автор: Zhiliang Xia,Fandong LIU,Wenyu HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-08-27.

Method of switching a periodic/aperiodic transmission of a channel estimation reference signal, and apparatus and method for a transmitting/receiving channel estimation reference signal using the same

Номер патента: US20120307772A1. Автор: Sungjin Suh,Kibum KWON. Владелец: PANTECH CO LTD. Дата публикации: 2012-12-06.

Methods of forming microelectronic devices with nitrogen-rich insulative structures, and related microelectronic devices, memory devices, and electronic systems

Номер патента: US20220293625A1. Автор: Kadir Abdul,Swapnil Lengade,Jeremy Adams,Naiming Liu,Jeslin J. Wu,Carlo Mendoza OROFEO. Владелец: Micron Technology Inc. Дата публикации: 2022-09-15.

METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING DEVICE AND AN ORGANIC LIGHT-EMITTING DEVICE MANUFACTURED BY USING THE SAME

Номер патента: US20210280833A1. Автор: Lee Jonghyeok,LEE Seungmook,KIM Heunggyu. Владелец: . Дата публикации: 2021-09-09.

Fabricating method of light emitting device and system, fabricated light emitting package and system using the same

Номер патента: KR101431711B1. Автор: 김유식. Владелец: 삼성전자 주식회사. Дата публикации: 2014-08-21.

Method of manufacturing semiconductor device having nonvolatile memory and logic circuit using multi-layered, inorganic mask

Номер патента: US6417086B1. Автор: Kanji Osari. Владелец: Toshiba Corp. Дата публикации: 2002-07-09.

Method of switching a periodic/aperiodic transmission of a channel estimation reference signal, and apparatus and method for a transmitting/receiving channel estimation reference signal using the same

Номер патента: US8953553B2. Автор: Sungjin Suh,Kibum KWON. Владелец: PANTECH CO LTD. Дата публикации: 2015-02-10.

Gas venting device, and battery module and battery pack including same

Номер патента: EP4358263A1. Автор: Yeon Chul Choo,Doo Seung KIM,Il Suk Sim. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-04-24.

Method of forming gate of flash memory device

Номер патента: US20080003754A1. Автор: Cheol Mo Jeong,Jung Geun Kim,Whee Won Cho,Seong Hwan Myung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-01-03.

Memory devices with vertical transistors

Номер патента: US20230276615A1. Автор: Tahir Ghani,Abhishek A. Sharma,Anand S. Murthy,Sagar SUTHRAM,Wilfred Gomes. Владелец: Intel Corp. Дата публикации: 2023-08-31.

Back-end-of-line selector for memory device

Номер патента: US20240276738A1. Автор: Yu-Ming Lin,Sheng-Chen Wang,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor memory device

Номер патента: US20240315009A1. Автор: Jaejin Lee,Jihoon Kim,Youngjun Kim,Dohyung Kim,Yeonju OH,Dongju Chang,Taekjung Kim,Seohyeong JANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD AND NONVOLATILE MEMORY ELEMENT

Номер патента: US20130149815A1. Автор: Himeno Atsushi,Mikawa Takumi,Kawashima Yoshio,Murase Hideaki. Владелец: . Дата публикации: 2013-06-13.

Nonvolatile Memory Cells and Arrays of Nonvolatile Memory Cells

Номер патента: US20130306933A1. Автор: Wells David H.,Liu Zengtao T.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2013-11-21.

RESISTIVE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME

Номер патента: US20140097397A1. Автор: PARK Woo Young,KIM Beom Yong,LEE Kee Jeung. Владелец: SK HYNIX INC.. Дата публикации: 2014-04-10.

Device and method of encoding/decoding discharged even-parity check with variable block length

Номер патента: RU2341894C2. Автор: Пан-Иух ДЗОО,Хонг-Сил ДЗЕОНГ,Донг-Сеек ПАРК,Дзае-Йоел КИМ,Гиу-Бум КИУНГ,Се-Хо МИУНГ,Киеонг-Чеол ЯНГ,Хиун-Коо ЯНГ. Владелец: САМСУНГ ЭЛЕКТРОНИКС КО., ЛТД.. Дата публикации: 2008-12-20.

Communication device and communication method

Номер патента: RU2601427C2. Автор: Хироаки ТАКАНО. Владелец: Сони Корпорейшн. Дата публикации: 2016-11-10.

Method of monitoring communication channel and transmitting device

Номер патента: RU2460223C1. Автор: Хиромицу СУГАХАРА. Владелец: Нек Корпорейшн. Дата публикации: 2012-08-27.

Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory device

Номер патента: US20080017889A1. Автор: Hyun Park,Byung-hong Chung,Won-Jin Kim,Ji-Young Min,Young-Ho Koh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Device and method of 6-step controlling inverter of motor driving system

Номер патента: EP2963806A3. Автор: Sung Kyu Kim,Hong Geuk PARK,Su Hyun Bae,Mu Shin Kwak. Владелец: Kia Motors Corp. Дата публикации: 2016-05-11.

Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

Номер патента: US20020173111A1. Автор: Naoki Kasai. Владелец: NEC Corp. Дата публикации: 2002-11-21.

System and method of compact messaging in network communications by removing tags and utilizing predefined message definitions

Номер патента: US8069451B2. Автор: Michael Shenfield,Bryan Goring. Владелец: Research in Motion Ltd. Дата публикации: 2011-11-29.

Method of operative treatment of burn wounds

Номер патента: RU2673806C1. Автор: Александр Викторович Мелерзанов,Елена Владимировна Петерсен. Владелец: федеральное государственное автономное образовательное учреждение высшего образования "Московский физико-технический институт (государственный университет)". Дата публикации: 2018-11-30.

Method of a vacuum deaeration of water

Номер патента: RU2253622C1. Автор: В.И. Шарапов,О.В. Малинина. Владелец: Ульяновский государственный технический университет. Дата публикации: 2005-06-10.

Method of introducing photoluminescent pigments in products made of decorative concrete

Номер патента: RU2668596C1. Автор: Игорь Викторович Столяров,Еркин Асадович Шукурлаев. Владелец: Еркин Асадович Шукурлаев. Дата публикации: 2018-10-02.

Method of hydrocarbons recovery from oil-bearing sands and oil shales

Номер патента: RU2553573C2. Автор: ГЕТТО Джамбаттиста ДЕ,Альберто ДЕЛЬБЬЯНКО. Владелец: Эни С.П.А.. Дата публикации: 2015-06-20.

Novel use of lipolytic enzyme for formation of anti-fingerprint coating, method of forming anti-fingerprint coating, substrate comprising the anti-fingerprint coating formed by the method, and product comprising the substrate

Номер патента: US20130302875A1. Автор: Young Jun Hong,Eun Jeong Lee. Владелец: LG Chem Ltd. Дата публикации: 2013-11-14.

Method of regulation of sewage flow rate in storm water drainage network

Номер патента: RU2627495C1. Автор: Виктор Станиславович Борткевич,Владимир Ильич Миркис,Сергей Александрович Драчиков,Родион Игоревич Удовиченко. Владелец: Акционерное Общество "Проектно-изыскательское научно-исследовательское бюро "ГИТЕСТ". Дата публикации: 2017-08-08.

Sterilization and washing methods of immobilized lactase

Номер патента: IE51765B1. Автор: . Владелец: Sumitomo Chemical Co. Дата публикации: 1987-03-18.

Device and method of use for pecan picking

Номер патента: US20180103585A1. Автор: Terry Todd Cooper. Владелец: Individual. Дата публикации: 2018-04-19.

Method of regulation of heat relief for heating buildings and regulation system on its basis (versions)

Номер патента: RU2642038C1. Автор: Андрей Александрович Пятин. Владелец: Андрей Александрович Пятин. Дата публикации: 2018-01-23.

Liquid ejection head, liquid ejection device and fluid ejection module

Номер патента: RU2736560C1. Автор: Йосиюки НАКАГАВА,Акико ХАММУРА. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2020-11-18.

METHOD OF IMPLEMENTATION OF A SET OF SYNTHESIS PROCESSES FOR OBTAINING A RADIOPHARMATIC MEDICINE BY SERIES, DEVICE AND CASSETTE FOR IMPLEMENTING THIS METHOD

Номер патента: RU2017143907A. Автор: Винсен Люк Антуан ТАДИНО,Гийом Андре Рене ВИЛЛЕРЕТ. Владелец: Аут Энд Аут Кемистри С.П.Р.Л.. Дата публикации: 2019-06-20.

Method of mounting heating tubes on a floor, a holder and a foam insulation plate for mounting according to the method and apparatus for performing the method

Номер патента: DE3166178D1. Автор: Heinz Denzer,Gerd Drum,Jürgen Weid. Владелец: Gebrueder Koemmerling Kunststoffwerke GmbH. Дата публикации: 1984-10-25.

Device and method of treating and preventing infectious disease

Номер патента: RU2494772C2. Автор: Лиат ШВАРЦ,Валентин БАРСКИЙ. Владелец: Орто-Ион Лтд.. Дата публикации: 2013-10-10.

Device and the method of feeding of papers

Номер патента: RU2273599C2. Автор: Колин Питер БРАЗЕРСТОН,Стивен Майкл ХОСКИНГ,Брайан Джеймс КРИСТОФЕРСЕН. Владелец: Де Ля Рю Интернэшнл Лимитед. Дата публикации: 2006-04-10.

Method of making vaso-occlusive coils

Номер патента: WO2002013708A3. Автор: Clifford Teoh. Владелец: Scimed Life Systems Inc. Дата публикации: 2002-06-06.

Method of producing an nonoriented film with improved barrier properties with respect to oxygen

Номер патента: RU2736502C1. Автор: ХАУК Даниль Мари Андре ВАН,Сентил Кумар КАЛИАППАН,Умеш Балкришна ГАДГОЛИ. Владелец: Абу Даби Полимерс Ко. Лтд (Боруж) Л.Л.С.. Дата публикации: 2020-11-17.

Method of quantitative assessment of inflow profile in low- and medium-rate horizontal oil wells with mhfr

Номер патента: RU2702042C1. Автор: Андрей Иванович Ипатов,Михаил Израилевич Кременецкий,Дмитрий Михайлович Лазуткин. Владелец: Общество с ограниченной ответственностью "Газпромнефть Научно-Технический Центр" (ООО "Газпромнефть НТЦ"). Дата публикации: 2019-10-03.

Method of multilayer packaging material manufacture, multilayer packaging material and packaging container made from it

Номер патента: RU2732133C2. Автор: Микаэль БЕРЛИН,Петер ЭХМАН,Ален КОЛЛО,Йоаким БАЛОГХ,Тереза ЭВИНГ. Владелец: ТЕТРА ЛАВАЛЬ ХОЛДИНГЗ ЭНД ФАЙНЭНС С.А.. Дата публикации: 2020-09-11.

Method of harvesting soybeans with a cut of the stems below the root collar

Номер патента: RU2748978C1. Автор: Ирина Михайловна Присяжная,Серафима Павловна Присяжная,Валентина Тимофеевна Синеговская,Константин Анатольевич Никульчев. Владелец: Федеральное государственное бюджетное научное учреждение "Всероссийский научно-исследовательский институт сои". Дата публикации: 2021-06-02.

Method of ice cover destruction

Номер патента: RU2730654C1. Автор: Алексей Сергеевич Васильев,Виталий Леонидович Земляк,Виктор Михайлович Козин,Сергей Владимирович Радионов. Владелец: Федеральное государственное бюджетное учреждение науки "Институт машиноведения и металлургии Дальневосточного отделения Российской академии наук". Дата публикации: 2020-08-24.

Method of recycling drill cuttings

Номер патента: RU2743937C1. Автор: Геннадий Андреевич Иванов,Михаил Владимирович Кравченко,Игорь Александрович Стариков,Елена Евгеньевна Гердт. Владелец: Общество с ограниченной ответственностью «РН-Ванкор». Дата публикации: 2021-03-01.

Methods of preparing red clay processed material and alkali ionized water

Номер патента: US20120321725A1. Автор: Jung-Keug Park,Moon Young Yoon. Владелец: Industry Academic Cooperation Foundation of Dongguk University. Дата публикации: 2012-12-20.

Methods of preparing red clay processed material and alkali ionized water

Номер патента: US9034394B2. Автор: Jung-Keug Park,Moon Young Yoon. Владелец: Industry Academic Cooperation Foundation of Dongguk University. Дата публикации: 2015-05-19.

Novel use of lipolytic enzyme for formation of anti-fingerprint coating, method of forming anti-fingerprint coating, substrate comprising the anti-fingerprint coating formed by the method, and product comprising the substrate

Номер патента: US20120177913A1. Автор: Young Jun Hong,Eun Jeong Lee,Taek Ho Yang,Hveon Choi. Владелец: LG Chem Ltd. Дата публикации: 2012-07-12.

Method of bending tubular blanks

Номер патента: RU2633863C1. Автор: Александр Александрович Афанасьев,Евгений Сергеевич Постников. Владелец: федеральное государственное бюджетное образовательное учреждение высшего образования "Белгородский государственный технологический университет им. В.Г. Шухова". Дата публикации: 2017-10-18.

Scratch and sniff delivery systems and methods of using the same

Номер патента: US20140255080A1. Автор: Craig Skinner,Brian Nemeckay,Michael Craig. Владелец: Crayola LLC. Дата публикации: 2014-09-11.

Systems and methods of auxilliary perforation sealing in the borehole casing string

Номер патента: RU2627327C2. Автор: Рэнди К. Толман,Павлин Б. Энтчев,Ренсо М. Анхелес-Боса,Крис Дж. Нюгор,Кристиан С. МАЙЕР. Владелец: Эксонмобил Апстрим Рисерч Компани. Дата публикации: 2017-08-07.

De-icing composition and method of application thereof

Номер патента: RU2174995C2. Автор: А. ЯНКЕ Джордж,Д. ДЖОНСОН мл. Уоррен. Владелец: А. ЯНКЕ Джордж. Дата публикации: 2001-10-20.

Method of producing polycarbonate by melt re-esterification, polycarbonate obtained using said method and use thereof

Номер патента: RU2495058C2. Автор: Александер МЕЙЕР,Вильфрид ХЭЗЕ. Владелец: Байер Матириальсайенс Аг. Дата публикации: 2013-10-10.

Human derived monocyte attracting purified protein product useful in a method of treating infection and neoplasms in a human body, and the cloning of full cdna thereof

Номер патента: CA2006964A1. Автор: Ettore Appella,Teizo Yoshimura,Elizabeth A. Robinson,Edward J. Leonard. Владелец: United States Of America, Represented By The Secretary, U.S. Department Of Commerce. Дата публикации: 1990-07-31.

Drive axle system and method of control

Номер патента: US20240034157A1. Автор: Edvin Godo,Banuchandar Muthukumar. Владелец: ArvinMeritor Technology LLC. Дата публикации: 2024-02-01.

Drive axle system and method of control

Номер патента: EP4311713A2. Автор: Edvin Godo,Banuchandar Muthukumar. Владелец: ArvinMeritor Technology LLC. Дата публикации: 2024-01-31.

Method of measuring and cutting a food product and associated measuring and cutting guide

Номер патента: US20060027108A1. Автор: Toby Wolfe. Владелец: Individual. Дата публикации: 2006-02-09.

Method of de-watering a Tailings lagoon

Номер патента: GB2582041A. Автор: Chapman Andrew,SMALLWOOD GARRY,Stanley Goodwin Richard,Tharanath Wanasinghe Mithila,James O'nien Stephen. Владелец: GOODWIN PLC. Дата публикации: 2020-09-09.

Drive axle system and method of control

Номер патента: EP4311713A3. Автор: Edvin Godo,Banuchandar Muthukumar. Владелец: ArvinMeritor Technology LLC. Дата публикации: 2024-04-17.

Drive axle system and method of control

Номер патента: US11987137B2. Автор: Edvin Godo,Banuchandar Muthukumar. Владелец: ArvinMeritor Technology LLC. Дата публикации: 2024-05-21.

Garment treatment device and method of making door mounted on garment treatment device

Номер патента: RU2690268C1. Автор: Йонгвоо КВОН,Сеунгдзи ЙОНГ,Кангвоон ЧЕОН,Дзаехоон ЧОИ,Дзунйоунг СОН,Хонгчул КИМ. Владелец: ЭлДжи ЭЛЕКТРОНИКС ИНК.. Дата публикации: 2019-05-31.

Methods of accelerating muscle growth and improving feed efficiency in animals by using optically pure eutomers of adrenergic beta-2 receptor agonists, and food supplements containing the same

Номер патента: US6110974A. Автор: A. K. Gunnar Aberg,Paul J. Fawcett. Владелец: Bridge Pharma Inc. Дата публикации: 2000-08-29.

Method of and machine for storing data

Номер патента: US3719262A. Автор: J Taplin. Владелец: J Taplin. Дата публикации: 1973-03-06.

Methods of producing engineered immune cells

Номер патента: WO2023223292A1. Автор: Yoshiki Nakamura,Hideo Araki,Soichiro Ogaki,Eiki MAEDA. Владелец: Takeda Pharmaceutical Company Limited. Дата публикации: 2023-11-23.

A manufacturing method of hollow type light weight insulation block for wall of housing and the hollow type light weight insulation block for wall of housing manufactured by the same

Номер патента: KR102290195B1. Автор: 오유상. Владелец: 오유상. Дата публикации: 2021-08-13.

Device for mounting roof support boards, lifting device and feeding device

Номер патента: RU2580109C2. Автор: Питер ЛАГ,Ричард Д. БОЙД,Эдриан ДЖЕРМИН,Уилльям Д. ЭДДОУС,Крис КОУТС. Владелец: Джой ММ Делавэр, Инк.. Дата публикации: 2016-04-10.

The manufacture method of underwear for correcting body shape with the possible combinations for a pair of outwear and underwear, and underwear for correcting body shape manufactured using the same

Номер патента: KR20120137452A. Автор: 임호택. Владелец: 임호택. Дата публикации: 2012-12-21.

Support and installation jack for hole forming devices and setting tool therefor

Номер патента: CA1052546A. Автор: Erhard A. Diener. Владелец: Individual. Дата публикации: 1979-04-17.

Manufacturing method of the Cosmetic Composition for Regenerating Skin Cell, Anti-oxidant, Anti-bacterial effect and Anti-inflammatory of the skin and the Cosmetic Composition manufactured by the same

Номер патента: KR101620950B1. Автор: 홍상근. Владелец: 홍상근. Дата публикации: 2016-05-16.

METHOD OF ARRANGING PADS IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE USING THE METHOD, AND PROCESSING SYSTEM HAVING MOUNTED THEREIN THE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20120002456A1. Автор: OH Chi-sung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

MEMORY SYSTEM, MEMORY TEST SYSTEM AND METHOD OF TESTING MEMORY SYSTEM AND MEMORY TEST SYSTEM

Номер патента: US20120002495A1. Автор: SUH Sung-Dong,HA Kyoung-Ho,Song Ki-Jae,KIM Seong-gu,JOE In-sung,Cho Soo-Haeng,Kim Yeoung-kum. Владелец: . Дата публикации: 2012-01-05.

INTERLEAVED MEMORY PROGRAM AND VERIFY METHOD, DEVICE AND SYSTEM

Номер патента: US20120002474A1. Автор: . Владелец: ROUND ROCK RESEARCH, LLC. Дата публикации: 2012-01-05.

TEST MODE CONTROL CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE AND TEST MODE ENTERING METHOD THEREOF

Номер патента: US20120002494A1. Автор: Jo Jun-Ho,PARK Kyu-Min,KIM BYOUNGSUL,LEE Hakyong. Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

METHODS OF FORMING NANOSCALE FLOATING GATE

Номер патента: US20120001248A1. Автор: Sandhu Gurtej S.,Ramaswamy D.V. Nirmal. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

OPTICAL RECORDING DEVICE AND METHOD

Номер патента: US20120002523A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SIGNAL TRANSMISSION DEVICE AND MANUFACTURING METHOD THEREFOR

Номер патента: US20120002923A1. Автор: Nakano Yoshiaki,Song Xueliang,Yit Foo Cheong,Wang Shurong,Horiguchi Katsumasa. Владелец: . Дата публикации: 2012-01-05.

METHOD OF ALLOCATING IP ADDRESS OF IMAGE FORMING APPARATUS USING DHCP, IMAGE FORMING APPARATUS AND SYSTEM OF ALLOCATING IP ADDRESS USING DHCP

Номер патента: US20120002240A1. Автор: MIN Ju-won. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

NONVOLATILE MEMORY, DATA PROCESSING APPARATUS, AND MICROCOMPUTER APPLICATION SYSTEM

Номер патента: US20120002498A1. Автор: MATSUBARA Ken,Setogawa Jun,IWASE Takashi,Matsushita Toru,Mitani Hidenori,Yamada Fumiko. Владелец: . Дата публикации: 2012-01-05.

Method for Packaging Electronic Devices and Integrated Circuits

Номер патента: US20120003791A1. Автор: . Владелец: WAFER-LEVEL PACKAGING PORTFOLIO LLC. Дата публикации: 2012-01-05.

CUFF FOR BLOOD PRESSURE INFORMATION MEASUREMENT DEVICE AND BLOOD PRESSURE INFORMATION MEASUREMENT DEVICE EQUIPPED WITH THE SAME

Номер патента: US20120004560A1. Автор: KAWANO Atsushi,SANO Yoshihiko,FUJITA Reiji,Nishioka Takanori,Tanaka Takahide. Владелец: OMRON HEALTHCARE CO., LTD.. Дата публикации: 2012-01-05.

APPARATUS INTEGRATING MICROELECTROMECHANICAL SYSTEM DEVICE WITH CIRCUIT CHIP AND METHODS FOR FABRICATING THE SAME

Номер патента: US20120001276A1. Автор: . Владелец: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE. Дата публикации: 2012-01-05.

Combined geotechnical method of mining metal ore deposits

Номер патента: RU2348800C2. Автор: Александр Иванович Заболоцкий,Геннадий Сергеевич Гребнев,Николай Васильевич Савен,Николай Васильевич Савеня,Сергей Александрович Суклета,Александр Павлович Криницын,Константин Александрович Заболоцкий. Владелец: Константин Александрович Заболоцкий. Дата публикации: 2009-03-10.

Method of thin wall electrolytic production of lead

Номер патента: RU2576409C1. Автор: Юрий Павлович Зайков,Павел Александрович Архипов,Юлия Ринатовна Халимуллина,Павел Сергеевич Першин. Владелец: Федеральное государственное бюджетное учреждение науки Институт высокотемпературной электрохимии Уральского отделения Российской академии наук. Дата публикации: 2016-03-10.

Method of soil purification from oil products and installation for its realisation

Номер патента: RU2535627C1. Автор: Владимир Васильевич Старших,Евгений Александрович Максимов. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Челябинская государственная агроинженерная академия". Дата публикации: 2014-12-20.

Optical fiber with a coating, a device and a method of its production

Номер патента: RU2260570C2. Автор: Коити ХАРАДА,Мунехиса ФУДЗИМАКИ,Кодзи ЦУРУСАКИ. Владелец: Фудзикура Лтд.. Дата публикации: 2005-09-20.

Stabilization method of structurally unstable fluid oscillator of booster units and upper stages of carrier rockets

Номер патента: RU2722399C1. Автор: Андрей Александрович Маслов,Владимир Анатольевич Лобанов,Лариса Алексеевна Митягина,Татьяна Александровна Полежаева,Наталья Юрьевна Люсина,Асия Алимжановна Сотниченко. Владелец: Федеральное государственное унитарное предприятие "Научно-производственный центр автоматики и приборостроения имени академика Н.А. Пилюгина" (ФГУП "НПЦАП"). Дата публикации: 2020-05-29.

RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE

Номер патента: US20130064002A1. Автор: Terai Masayuki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-03-14.

3-D NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE 3-D NONVOLATILE MEMORY DEVICE, AND METHOD OF MANUFACTURING THE 3-D NONVOLATILE MEMORY DEVICE

Номер патента: US20130153983A1. Автор: Jeon Yoo Nam. Владелец: . Дата публикации: 2013-06-20.

Method of testing of operation of relay protection and device for its implementation

Номер патента: RU2013817C1. Автор: В.Д. Карагодина,О.Г. Рябцова. Владелец: Карагодина Валентина Дмитриевна. Дата публикации: 1994-05-30.

MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME

Номер патента: US20120018825A1. Автор: Oh Sechung,KIM WOOJIN,Lee Jangeun,Lim Woo Chang. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-26.

FORMING METHOD OF PERFORMING FORMING ON VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE

Номер патента: US20120230085A1. Автор: . Владелец: . Дата публикации: 2012-09-13.

Methods Of Forming A Nonvolatile Memory Cell And Methods Of Forming An Array Of Nonvolatile Memory Cells Array Of Nonvolatile Memory Cells

Номер патента: US20120264272A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-10-18.

FORMING METHOD OF PERFORMING FORMING ON VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE

Номер патента: US20130044534A1. Автор: SHIMAKAWA Kazuhiko,Kawai Ken,Katayama Koji. Владелец: . Дата публикации: 2013-02-21.

Method of inspecting leak-proofness of spacecraft temperature control hydraulic system provided with hydropneumatic compensator and supplied with heat-transfer agent

Номер патента: RU2246102C1. Автор: В.М. Цихоцкий. Владелец: Открытое акционерное общество "Ракетно-космическая корпорация "Энергия" им. С.П. Королева". Дата публикации: 2005-02-10.

Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern

Номер патента: US20120023386A1. Автор: Oh Sechung,KIM WOOJIN,Lee Jangeun,SHIN Heeju. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-26.

METHODS OF FORMING A NONVOLATILE MEMORY CELL AND METHODS OF FORMING AN ARRAY OF NONVOLATILE MEMORY CELLS

Номер патента: US20120164798A1. Автор: Sandhu Gurtej S.,Sills Scott E.. Владелец: . Дата публикации: 2012-06-28.

NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, NONVOLATILE MEMORY DEVICE, AND DESIGN SUPPORT METHOD FOR NONVOLATILE MEMORY ELEMENT

Номер патента: US20130010529A1. Автор: Hayakawa Yukio,Mikawa Takumi,Ninomiya Takeki. Владелец: . Дата публикации: 2013-01-10.

Heat convector and installation method of its heat thermostatic heat carrier flow regulator

Номер патента: RU2408824C2. Автор: Владимир Николаевич Андреев,Вячеслав Борисович Уткин,Владимир Николаевич Андреев (RU),Вячеслав Борисович Уткин (RU). Владелец: Закрытое акционерное общество "Сокол-АТС". Дата публикации: 2011-01-10.

A new method of increasing access cycle time in a memory device is achieved

Номер патента: TW200613972A. Автор: Chiun-chi Shen,Der-Min Yuan. Владелец: Etron Technology Inc. Дата публикации: 2006-05-01.

A new method of increasing access cycle time in a memory device is achieved

Номер патента: TWI259953B. Автор: Chiun-chi Shen,Der-Min Yuan. Владелец: Etron Technology Inc. Дата публикации: 2006-08-11.

CIRCUIT AND METHOD FOR CORRECTING SKEW IN A PLURALITY OF COMMUNICATION CHANNELS FOR COMMUNICATING WITH A MEMORY DEVICE, MEMORY CONTROLLER, SYSTEM AND METHOD USING THE SAME, AND MEMORY TEST SYSTEM AND METHOD USING THE SAME

Номер патента: US20120166894A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-06-28.

MEMORY CONTROLLER, DATA STORAGE SYSTEM INCLUDING THE SAME, METHOD OF PROCESSING DATA

Номер патента: US20120131266A1. Автор: KIM Jin Kyu,Kim Kwang Ho,KONG Jun Jin,CHO KYOUNG LAE. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-05-24.

Nonvolatile memory access method, system and nonvolatile memory controller

Номер патента: CN102193871B. Автор: 林明辉. Владелец: Phison Electronics Corp. Дата публикации: 2014-08-20.

Display device and lamp clamping components thereof, and method for manufacturing the same

Номер патента: TW201116765A. Автор: Yu-Chun Shiao,Pei-Ying Huang. Владелец: Chi Mei Optoelectronics Corp. Дата публикации: 2011-05-16.

FORMING METHOD FOR VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE

Номер патента: US20120120712A1. Автор: SHIMAKAWA Kazuhiko,Muraoka Shunsaku,Kawai Ken,Azuma Ryotaro. Владелец: . Дата публикации: 2012-05-17.

DATA READ CIRCUIT, A NON-VOLATILE MEMORY DEVICE HAVING THE SAME, AND A METHOD OF READING DATA FROM THE NON-VOLATILE MEMORY DEVICE

Номер патента: US20130051114A1. Автор: PARK Chul-woo,HWANG Hong-sun,Kim Chan-kyung,Kang Sang-beom,Oh Hyung-rok. Владелец: . Дата публикации: 2013-02-28.

Driven device and manufacturing machine for air-filled cushioning materials using the same

Номер патента: TWM374447U. Автор: Kai-Yuan Tan. Владелец: Kai-Yuan Tan. Дата публикации: 2010-02-21.

Contaminant exhausting device and oblique single air-curtain type range hood using the same

Номер патента: TWM356084U. Автор: rong-fang Huang. Владелец: rong-fang Huang. Дата публикации: 2009-05-01.

Device and method to convert one or plural signals having the same period but different widths into the signals that can be synchronously triggered or cut off

Номер патента: TW200731674A. Автор: Chia-Liang Lu. Владелец: Chen De Jong. Дата публикации: 2007-08-16.

Fluid pressure reduction device and high differential valve with multi-turn selection using the same

Номер патента: TW200615485A. Автор: Kuo-Hung Lin,Shih-Shih Kao. Владелец: Metal Ind Res & Dev Ct. Дата публикации: 2006-05-16.

Ambient ionization device and system of thermogravimetry integrated with mass spectrometer using the same

Номер патента: TW201612945A. Автор: Jea-Taie Shiea. Владелец: Univ Nat Sun Yat Sen. Дата публикации: 2016-04-01.

Method of preparing pectin from citrus squeezings

Номер патента: RU2248371C2. Автор: О.И. Квасенков,И.И. Квасенков,Л.В. Донченко,Л.Я. Родионова,В.Д. Надыкта,С.М. Горлов,О.И. Квасенков (RU),И.И. Квасенков (RU),В.Д. Надыкта (RU),С.М. Горлов (RU),Л.В. Донченко (RU),Л.Я. Родионова (RU). Владелец: Кубанский государственный аграрный университет. Дата публикации: 2005-03-20.

A method of writing and reading binary numbers in memory devices and a memory device for implementing this method.

Номер патента: SU124705A1. Автор: Л.И. Гутенмахер. Владелец: Л.И. Гутенмахер. Дата публикации: 1958-11-30.

Method of measuring range

Номер патента: RU2594341C1. Автор: Игорь Борисович Широков,Иван Владимирович Камынин. Владелец: Игорь Борисович Широков. Дата публикации: 2016-08-10.

Manufacturing method of gallium nitride-based light emitting device and gallium nitride-based light emitting device manufactured by the same

Номер патента: KR20090028289A. Автор: 김용천,심현욱,강중서. Владелец: 삼성전기주식회사. Дата публикации: 2009-03-18.

Double programming methods of a multi-level-cell nonvolatile memory

Номер патента: TWI327319B. Автор: Chun Hsiung Hung,Kuen Long Chang,Wen Chiao Ho. Владелец: Macronix Int Co Ltd. Дата публикации: 2010-07-11.

MEMORY CONTROL DEVICE, SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND MEMORY CONTROL METHOD

Номер патента: US20120023338A1. Автор: Sugahara Takahiko,Furuichi Tetsuo,Yamaguchi Ikuo,Oshikiri Takashi. Владелец: MegaChips Corporation. Дата публикации: 2012-01-26.

DATA READ METHOD FOR A PLURALITY OF HOST READ COMMANDS, AND FLASH MEMORY CONTROLLER AND STORAGE SYSTEM USING THE SAME

Номер патента: US20120311247A1. Автор: Yeh Chih-Kang. Владелец: PHISON ELECTRONICS CORP.. Дата публикации: 2012-12-06.

Method of determining comprehensive data on ocean condition

Номер патента: RU2282217C1. Автор: Виктор Сергеевич Аносов,Владимир Васильевич Чернявец,Александр Анатольевич Федоров,вец Владимир Васильевич Черн,Александр Александрович Парамонов,Сергей Александрович Дроздов,Дмитрий Леонидович Щенников,Вячеслав Семенович Ястребов,В чеслав Семенович Ястребов. Владелец: Вячеслав Семенович Ястребов. Дата публикации: 2006-08-20.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.