MOS transistor used in CMOS circuits comprises a semiconductor island on a main surface of substrate and an annular isolating structure arranged on the island
Номер патента: DE19928563A1
Опубликовано: 11-01-2001
Автор(ы): Stephan Pindl
Принадлежит: INFINEON TECHNOLOGIES AG
Опубликовано: 11-01-2001
Автор(ы): Stephan Pindl
Принадлежит: INFINEON TECHNOLOGIES AG
Реферат: MOS transistor comprises a semiconductor island (18) on a main surface of substrate (2, 3) and an annular isolating structure (11) arranged on the island. The island laterally protrudes over the isolating structure in at least one side region containing a highly doped area (19). The surface of the island (18) is provided with a gate dielectric (5), above which is a first electrode structure (16) arranged within the isolating structure, and a second electrode structure (17) electrically connected to the highly doped area. Two source/drain regions (20) are arranged in the island on both sides of the first electrode structure and extending up to the boundary of the annular isolating structure. An Independent claim is also included for the production of the transistor.
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
Номер патента: US20030122191A1. Автор: Takashi Yamada,Shinichi Nitta,Ichiro Mizushima,Hajime Nagano,Yuso Udo. Владелец: Individual. Дата публикации: 2003-07-03.