Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

Manufacturing method of semiconductor device

Номер патента: US20170358489A1
Опубликовано: 14-12-2017
Автор(ы): Hironori Ochi, Katsuhiko Hotta, Kenichi Shoji, Kiyoshi Maeshima, Kotaro Horikoshi, Toshiyuki Takahashi
Принадлежит: Renesas Electronics Corp
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Method of manufacturing a semiconductor device

Номер патента: US20180190656A1. Автор: Chun-Yuan Wu,Yu-Chieh Lin,Shih-Fang Tzou,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-07-05.

Method of manufacturing a semiconductor device

Номер патента: US10236294B2. Автор: Chun-Yuan Wu,Yu-Chieh Lin,Shih-Fang Tzou,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-03-19.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297254A1. Автор: Wei-Fan Lee,Wen-Hsien TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12021144B2. Автор: Wei-Fan Lee,Wen-Hsien TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09786556B2. Автор: Sadatoshi Murakami,Weiting Wang,Fumiharu Nakajima,Yoko Yokoyama. Владелец: Toshiba Memory Corp. Дата публикации: 2017-10-10.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09646982B2. Автор: Sadatoshi Murakami,Weiting Wang,Fumiharu Nakajima,Yoko Yokoyama. Владелец: Toshiba Corp. Дата публикации: 2017-05-09.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20160071859A1. Автор: Sadatoshi Murakami,Weiting Wang,Fumiharu Nakajima,Yoko Yokoyama. Владелец: Toshiba Corp. Дата публикации: 2016-03-10.

Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Номер патента: US09564442B2. Автор: Wolfgang Mueller,Sanh D. Tang,Sourabh Dhir,Dylan R. MACMASTER. Владелец: Micron Technology Inc. Дата публикации: 2017-02-07.

Method of fabricating a semiconductor device and a semiconductor device fabricated by the method

Номер патента: US09508551B2. Автор: Jae-Hwang Sim,Jeehoon HAN,Hojun SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Fabrication method of integrated circuit semiconductor device

Номер патента: US20200395241A1. Автор: Jiyoung Kim,Dongsoo Woo,Joonyoung Choi,Junsoo Kim,Namho Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Method of manufacturing a semiconductor device

Номер патента: US09853111B2. Автор: Bon Young Koo,Kyung In CHOI,Hyun Gi Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-26.

Method of manufacturing a semiconductor device

Номер патента: US09985034B2. Автор: Chang-Hyun Cho,Chan-Sic Yoon,Ho-In Ryu,Ki-Seok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-29.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20170053992A1. Автор: Masakazu Okada,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2017-02-23.

Method of making a semiconductor device using multiple layer sets

Номер патента: US09455156B2. Автор: Bi-Ming Yen,Tsai-Chun Li,Chun-Ming Hu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-27.

Method of making a semiconductor device using multiple layer sets

Номер патента: US20140167227A1. Автор: Bi-Ming Yen,Tsai-Chun Li,Chun-Ming Hu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-06-19.

Methods of manufacturing a semiconductor device and a semiconductor memory device thereby

Номер патента: US20120187471A1. Автор: Seong-soo Lee,Dae-hyun Jang,Gyung-Jin Min,Suk-Ho Joo,Yoo-Chul Kong,Han-Geun YU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-26.

Method of forming key patterns and method of fabricating a semiconductor device using the same

Номер патента: US09704721B2. Автор: Ja-Min Koo,Heeju Shin,Jonghwa Baek,Boo-Hyun Ham,Rankyung Jung,Hyunchang LEE,Yongkug Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Method of manufacturing a semiconductor device and designing a mask pattern

Номер патента: US20020197567A1. Автор: Akira Matsumoto. Владелец: NEC Corp. Дата публикации: 2002-12-26.

Method of manufacturing a semiconductor device and designing a mask pattern

Номер патента: US6815148B2. Автор: Akira Matsumoto. Владелец: NEC Electronics Corp. Дата публикации: 2004-11-09.

Method of making a semiconductor device using a barrier and antireflective coating (BARC) layer

Номер патента: US09589798B2. Автор: Bi-Ming Yen,Tsai-Chun Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Method of manufacturing a semiconductor device

Номер патента: US09793291B2. Автор: Sang-Hoon Lee,Young-dae Kim,Hong-suk Kim,Jung-Hwan Kim,Hun-Hyeong Lim,Hyun-Jin Shin,Yong-Seok Cho,Han-Vit YANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-17.

Method of forming a semiconductor device

Номер патента: US11776810B2. Автор: Chun-Yen Chang,Yee-Chia Yeo,Chia-Cheng Chen,Chih-Kai Yang,Liang-Yin Chen,Huicheng Chang,Ya Hui Chang,Chun-Hung Wu,Yu-Tien Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-03.

Method of Forming a Semiconductor Device

Номер патента: US20230411156A1. Автор: Chun-Yen Chang,Yee-Chia Yeo,Chia-Cheng Chen,Chih-Kai Yang,Liang-Yin Chen,Huicheng Chang,Ya Hui Chang,Chun-Hung Wu,Yu-Tien Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Method of manufacturing a semiconductor device

Номер патента: US20060211214A1. Автор: Takeshi Nagao. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-09-21.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20240055526A1. Автор: Chao-Cheng Chen,Yu-Chi Lin,Yu-Ting WENG,Chiung Wen Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Method of Processing a Semiconductor Device

Номер патента: US20170236913A1. Автор: Martin Poelzl,Heimo Hofer,Britta Wutte. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-08-17.

Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device

Номер патента: US09721833B2. Автор: Francois Hebert. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-08-01.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US12112952B2. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-08.

Method of manufacturing a semiconductor device

Номер патента: US20240249941A1. Автор: Ching-Yu Chang,Wei-Han Lai,Jing Hong Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method of producing a semiconductor device including treatment with dilute hydrofluoric acid

Номер патента: US8951844B2. Автор: Hiroyuki Ogawa,Naomi Yanai,Yuka Kase. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2015-02-10.

Method of forming a semiconductor device

Номер патента: US20170069550A1. Автор: Ran Yan,Pei-Yu Chou,Alban Zaka. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-09.

Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin

Номер патента: US09431522B2. Автор: Sung-dae Suk,Sungmin Kim,JaeHoo PARK,Daewon HA,Dongho Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-30.

Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same

Номер патента: US09576848B2. Автор: Sanghoon Ahn,NaeIn Lee,Byunghee Kim,Thomas Oszinda,Taejin Yim,Keeyoung Jun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200006154A1. Автор: I-Sheng Chen,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20170062327A1. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-02.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20200388502A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Номер патента: US20220181161A1. Автор: Sungmin Kim,Daewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-09.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180068944A1. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-08.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US9831179B2. Автор: Kyoung-hoon Kim,Woo-Sung Yang,Jee-hoon HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-28.

Method of manufacturing a semiconductor device

Номер патента: US11955336B2. Автор: Ching-Yu Chang,Wei-Han Lai,Jing Hong Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-09.

Semiconductor Device Including Wrap Around Contact and Method of Forming the Semiconductor Device

Номер патента: US20180374958A1. Автор: Michael A. Guillorn,Nicolas Jean Loubet. Владелец: International Business Machines Corp. Дата публикации: 2018-12-27.

Method of manufacturing a semiconductor device having interconnections located both above a semiconductor region and above an isolation region adjoining it

Номер патента: US4973562A. Автор: Hubertus J. den Blanken. Владелец: US Philips Corp. Дата публикации: 1990-11-27.

Semiconductor device including wrap around contact, and method of forming the semiconductor device

Номер патента: US20180006159A1. Автор: Michael A. Guillorn,Nicolas Jean Loubet. Владелец: International Business Machines Corp. Дата публикации: 2018-01-04.

Method of manufacturing a semiconductor device having deep wells

Номер патента: US09831134B1. Автор: Chen-Chin Liu,Meng-Han LIN,Chih-Ren Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-28.

Method of wiring layout, semiconductor device, program for supporting design of wiring layout, and method for manufacturing semiconductor device

Номер патента: US09977855B2. Автор: Koichi Nakayama,Toshiya Kotani,Chikaaki Kodama,Shigeki Nojima,Fumiharu Nakajima,Hirotaka Ichikawa. Владелец: Toshiba Memory Corp. Дата публикации: 2018-05-22.

Apparatus for fabricating a semiconductor device and method of fabricating a semiconductor device using the same

Номер патента: US20080057734A1. Автор: Dae Young Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-03-06.

Method of manufacturing a semiconductor device having deep wells

Номер патента: US20180090392A1. Автор: Chen-Chin Liu,Meng-Han LIN,Chih-Ren Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-29.

Method of manufacturing a semiconductor device having deep wells

Номер патента: US10134644B2. Автор: Chen-Chin Liu,Meng-Han LIN,Chih-Ren Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-11-20.

Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions

Номер патента: CA1330195C. Автор: Paulus A. Van Der Plas,Wilhelmina C. E. Snels. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1994-06-14.

Semiconductor device including graphene interconnect and method of making the semiconductor device

Номер патента: US20230335497A1. Автор: Ming-Han Lee,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Method of manufacturing a semiconductor device having bit line structures disposed in trenches

Номер патента: US09666585B2. Автор: Myoung Soo Kim,Jin Ki Jung. Владелец: SK hynix Inc. Дата публикации: 2017-05-30.

Methods of fabricating a semiconductor device

Номер патента: US09966262B2. Автор: JaeWoo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-08.

Method of Fabricating a Semiconductor Device

Номер патента: US20090075462A1. Автор: Rolf Weis,Dirk Manger,Christoph Noelscher. Владелец: Qimonda AG. Дата публикации: 2009-03-19.

Methods of forming a semiconductor device and related semiconductor devices

Номер патента: US20200211981A1. Автор: Adam L. Olson,John D. Hopkins,Jeslin J. Wu,Rohit Kothari. Владелец: Micron Technology Inc. Дата публикации: 2020-07-02.

Method of Producing a Semiconductor Device and a Semiconductor Device

Номер патента: US20160071819A1. Автор: Manfred Engelhardt,Edward Fuergut,Bernd Roemer,Hannes Eder. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-10.

Method of manufacturing a semiconductor device with a continuous silicate glass structure

Номер патента: US09384960B2. Автор: Hans-Joachim Schulze,Markus Zundel,Alexander Susiti,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-07-05.

Method of manufacturing a semiconductor device

Номер патента: US09570319B2. Автор: MING-CHING Chang,yu chao Lin,Chao-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-14.

Method of manufacturing a semiconductor device

Номер патента: US20160336431A1. Автор: Ssu-Ting Wang,Te-Yuan Yin,Wen-Chung Yang. Владелец: Powerchip Technology Corp. Дата публикации: 2016-11-17.

Method of Implantation for Semiconductor Device

Номер патента: US20220123111A1. Автор: Yee-Chia Yeo,Chun-Feng Nieh,Huicheng Chang,Che-Fu Chiu,Bau-Ming Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-21.

Method of wiring layout, semiconductor device, program for supporting design of wiring layout, and method for manufacturing semiconductor device

Номер патента: US09953126B2. Автор: Koichi Nakayama,Toshiya Kotani,Chikaaki Kodama,Shigeki Nojima,Fumiharu Nakajima,Hirotaka Ichikawa. Владелец: Toshiba Memory Corp. Дата публикации: 2018-04-24.

Method of manufacturing a semiconductor device

Номер патента: US09490349B1. Автор: Ssu-Ting Wang,Te-Yuan Yin,Wen-Chung Yang. Владелец: Powerchip Technology Corp. Дата публикации: 2016-11-08.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12142533B2. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Method of manufacturing a semiconductor device

Номер патента: US4305974A. Автор: Ryoji Abe,Makoto Serigano,Shuji Tabuchi. Владелец: Fujitsu Ltd. Дата публикации: 1981-12-15.

Method of forming a semiconductor device with a seed layer migration process

Номер патента: US12051754B2. Автор: Kihwan Kim,Youngdae CHO,Sunguk JANG,Sujin JUNG,Junbeom PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US7550397B2. Автор: Sung Kyung Jung. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-06-23.

Method of manufacturing a semiconductor device having a pre-metal dielectric liner

Номер патента: US20070148959A1. Автор: Sung Jung. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-06-28.

Semiconductor Device Including an Isolation Structure and Method of Manufacturing a Semiconductor Device

Номер патента: US20160190241A1. Автор: Till Schloesser,Christoph Kadow. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-06-30.

Fabricating method of fin-type semiconductor device

Номер патента: US09923065B2. Автор: Ming Zhou,Xinyun Xie. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-03-20.

Semiconductor device including an isolation structure and method of manufacturing a semiconductor device

Номер патента: US09614033B2. Автор: Till Schloesser,Christoph Kadow. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-04-04.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20190214264A1. Автор: Katsumi Suzuki,Shigeyuki Takagi,Yuichi Takeuchi,Masaki Shimomura,Sachiko Aoi. Владелец: Toyota Motor Corp. Дата публикации: 2019-07-11.

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Номер патента: US9837506B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-12-05.

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Номер патента: US09837506B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-12-05.

Method of forming a semiconductor device

Номер патента: US09553165B2. Автор: Gordon M. Grivna,Ali Salih. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-01-24.

Method of fabricating a semiconductor device

Номер патента: US09508832B2. Автор: Hyun Jung Lee,Seung Hun Lee,Poren Tang,Sunjung Kim,Jongryeol YOO,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170317097A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-02.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20170250191A1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-31.

Method of fabricating a semiconductor device

Номер патента: US20180130665A1. Автор: Hyun Park,NaeIn Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-10.

Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device

Номер патента: US20230299168A1. Автор: Sung-Li Wang,Po-Chin Chang,Pinyen Lin,Shuen-Shin Liang,Chia-Hung Chu,Yuting CHENG,Ken-Yu Chang,Wei-Yip Loh,Hung-Yi Huang,Hsu-Kai Chang,Kuan-Kan HU,Chuan-Hui SHEN,Harry CHIEN,Tzu-Pei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Methods of fabricating a semiconductor device

Номер патента: US09871122B2. Автор: Jaeseok Yang,Hyunjae Lee,In-wook Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-16.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US09748259B1. Автор: Frank Jakubowski,Juergen Faul. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-29.

Method of manufacturing a semiconductor device

Номер патента: US09524925B2. Автор: Yoshifumi ZAIZEN,Masaki Okamoto,Masaki HANEDA,Satoru Wakiyama,Kazunori Nagahata,Reijiroh Shohji,Yutaka Ooka. Владелец: Sony Corp. Дата публикации: 2016-12-20.

Method of forming a semiconductor device comprising at least one germanium nanowire

Номер патента: US10714595B2. Автор: Liesbeth Witters,Kurt Wostyn. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-07-14.

Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity

Номер патента: US09530669B1. Автор: Kangguo Cheng,Karthik Balakrishnan,Pouya Hashemi,Alexander Reznicek. Владелец: International Business Machines Corp. Дата публикации: 2016-12-27.

Method of forming a semiconductor device with multiple etch stop layers and inter-layer dielectrics

Номер патента: US09859431B2. Автор: Yu-Lien Huang,Tung Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

Номер патента: US09425059B2. Автор: Jin-Seo Lee,Jung-Sik Choi,Youn-Joung Cho,Hyo-Jin Yun,Ji-man Park,Jun-Hyun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-23.

Method of manufacturing a semiconductor device having a plurality of elements

Номер патента: US5019526A. Автор: Tetsuo Fujii,Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-05-28.

Method of fabricating a semiconductor device

Номер патента: US11881508B2. Автор: Taegon Kim,Seong Hoon JEONG,Sunjung Kim,Kyungin Choi,Hyunchul Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-23.

Method of fabricating a semiconductor device

Номер патента: US20220320278A1. Автор: Taegon Kim,Seong Hoon JEONG,Sunjung Kim,Kyungin Choi,Hyunchul Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-06.

Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures

Номер патента: US20180090594A1. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-29.

Method of manufacturing a semiconductor device

Номер патента: US20230326741A1. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-12.

Method of producing a semiconductor device

Номер патента: US09640585B1. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-05-02.

Method of manufacturing a semiconductor device

Номер патента: US11715636B2. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Method of forming a semiconductor device

Номер патента: US09953878B2. Автор: Neng-Kuo Chen,Yu-Lien Huang,Tung Ying Lee,Ming-Huan Tsai,Chun-Hsiang FAN,Pei-Yi Lin,Sheng-Wen Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-24.

Method of making a semiconductor device

Номер патента: US5989992A. Автор: Toshiki Yabu,Mizuki Segawa. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1999-11-23.

Method of manufacturing a semiconductor device with high packing density and having field effect transistors

Номер патента: US5385857A. Автор: Jose Solo De Zaldivar. Владелец: US Philips Corp. Дата публикации: 1995-01-31.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12094804B2. Автор: Zhan Ying,Jie Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

Номер патента: US7189637B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-03-13.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8536708B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-09-17.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8030207B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-10-04.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20080284027A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Ltd. Дата публикации: 2008-11-20.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US8338953B2. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-25.

Method of Manufacturing a Semiconductor Device Having an Integrated pn Diode Temperature Sensor

Номер патента: US20200006185A1. Автор: Mark Harrison,Georg SCHINNER. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2020-01-02.

Methods of fabricating a semiconductor device

Номер патента: US09793158B2. Автор: Yong Kong Siew,Hyunsu KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-17.

Methods of fabricating a semiconductor device having a via structure and an interconnection structure

Номер патента: US09905458B2. Автор: Seongho Park,Yongkong SIEW. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US09997451B2. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: International Business Machines Corp. Дата публикации: 2018-06-12.

Method of manufacturing a semiconductor device

Номер патента: US09837310B2. Автор: Shau-Lin Shue,Chao-Hsien Peng,Hsiang-Huan Lee,Chi-Liang Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Semiconductor device with contacts and metal interconnects and method of manufacturing the semiconductor device

Номер патента: US20150371945A1. Автор: Naoya Inoue,Yoshihiro Hayashi,Kenichiro Hijioka. Владелец: Renesas Electronics Corp. Дата публикации: 2015-12-24.

Method of manufacturing a semiconductor device with a multilayer wiring

Номер патента: US6143651A. Автор: Marian N. Webster,Albertus G. Dirks. Владелец: US Philips Corp. Дата публикации: 2000-11-07.

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Номер патента: US20180190585A1. Автор: Lawrence A. Clevenger,Michael RIZZOLO,Huai HUANG,Christopher J. Penny,Bartlet H. DeProspo,Benjamin David Briggs. Владелец: International Business Machines Corp. Дата публикации: 2018-07-05.

Method of fabricating a semiconductor device with reduced leak paths

Номер патента: US20160218036A1. Автор: Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-28.

Method of fabricating a semiconductor device with reduced leak paths

Номер патента: US9978640B2. Автор: Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-22.

Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon

Номер патента: US20090081870A1. Автор: Kazuyoshi Ueno,Toshiyuki Takewaki. Владелец: NEC Electronics Corp. Дата публикации: 2009-03-26.

Method of making a semiconductor device

Номер патента: US6090699A. Автор: Gaku Minamihaba,Hitoshi Tamura,Tadashi Iijima,Kyoichi Suguro,Hiromi Niiyama,Tomonori Aoyama,Hisataka Hayashi,Hisako Aoyama. Владелец: Toshiba Corp. Дата публикации: 2000-07-18.

Methods of manufacturing a semiconductor device

Номер патента: US20170278746A1. Автор: Yong-Kong SIEW. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-28.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20200111750A1. Автор: Stefan Beyer,Marius Aurel Bodea,Jia Yi WONG. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-04-09.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20110241211A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-10-06.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20120326315A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-27.

Method of forming a semiconductor device having a conductor in a sidewall of the substrate

Номер патента: US09761659B2. Автор: Hsiao-Tsung Yen,Cheng-Wei Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Method of forming a semiconductor device and according semiconductor device

Номер патента: US20160079086A1. Автор: Kai Frohberg,Peter Moll,Hans-Juergen Thees,Dominic Thurmer,Heike Scholz. Владелец: Globalfoundries Inc. Дата публикации: 2016-03-17.

Method of forming a semiconductor device and according semiconductor device

Номер патента: US09761689B2. Автор: Kai Frohberg,Peter Moll,Hans-Juergen Thees,Dominic Thurmer,Heike Scholz. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US09842845B1. Автор: Ralf Richter,Thomas Melde. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-12.

Method of forming a semiconductor device structure and such a semiconductor device structure

Номер патента: US09472642B2. Автор: Ralf Richter,Jan Hoentschel,Stefan Flachowsky,Peter Javorka. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297225A1. Автор: SHEN Wang,Shiang-Bau Wang,Che-Fu Chen,Hsu Ming Hsiao,Hong Pin Lin,Kung-Shu HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Semiconductor device, integrated circuit and method of forming a semiconductor device

Номер патента: US09735243B2. Автор: Rolf Weis,Franz Hirler,Andreas Meiser,Markus Zundel,Martin Vielemeyer,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-15.

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Номер патента: US09893158B2. Автор: Oliver Haeberlen,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-02-13.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11742404B2. Автор: Chun Chieh Wang,Yueh-Ching Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-29.

Methods of forming a semiconductor device with a gate stack having tapered sidewalls

Номер патента: US09520474B2. Автор: Che-Cheng Chang,Yi-Jen Chen,Chang-Yin Chen,Yung Jung Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-13.

Method of manufacturing a semiconductor device including capping layer, barrier layer and work function layer

Номер патента: US12046657B2. Автор: Hsueh Wen Tsau. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Method of forming a semiconductor device including trench termination

Номер патента: US9773693B2. Автор: Gordon M. Grivna,Zia Hossain,Ali Salih. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-09-26.

Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer

Номер патента: US11756995B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Method of fabricating a semiconductor device

Номер патента: US09812329B2. Автор: Jung Sik Choi,Youn Joung CHO,Won Woong CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-07.

Method of Manufacturing a Semiconductor Device Having a Cell Field Portion and a Contact Area

Номер патента: US20160093529A1. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-31.

Method of manufacturing a semiconductor device having a cell field portion and a contact area

Номер патента: US9852945B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-12-26.

Method of manufacturing a semiconductor device having a cell field portion and a contact area

Номер патента: US09852945B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-12-26.

Semiconductor device, method of making a semiconductor device, and processing system

Номер патента: US20200258997A1. Автор: Sanjay Natarajan,Yi-Chiau Huang,Patricia M. Liu,Xuebin Li,Saurabh Chopra,Gaurav Thareja,Abhishek Dube,Andy Lo. Владелец: Applied Materials Inc. Дата публикации: 2020-08-13.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240047379A1. Автор: Alim Karmous,Norbert Labrenz. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-02-08.

Method of forming a semiconductor device having several gate levels

Номер патента: US4724218A. Автор: Pierre Blanchard,Jean P. Cortot. Владелец: Thomson CSF SA. Дата публикации: 1988-02-09.

Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device

Номер патента: US20210217749A1. Автор: Jongchul Park,Sanghyun Lee,Sungwoo Kang,Youngmook Oh,Jeongyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-15.

Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device

Номер патента: US20230097668A1. Автор: Jongchul Park,Sanghyun Lee,Sungwoo Kang,Youngmook Oh,Jeongyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-30.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20210126090A1. Автор: Kyu Hyun Lee,Yoo Sang Hwang,Woo Young Choi,Sang-Il Han,Hui-jung Kim,Kyu Jin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-29.

Method of forming a semiconductor device structure and such a semiconductor device structure

Номер патента: US20160163815A1. Автор: Ralf Richter,Jan Hoentschel,Stefan Flachowsky,Peter Javorka. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11824103B2. Автор: Chih-Teng Liao,Chen-Wei Pan,Jen-Chih Hsueh,Li-Feng CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230378327A1. Автор: Chih-Teng Liao,Chen-Wei Pan,Jen-Chih Hsueh,Li-Feng CHU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Номер патента: US20200044036A1. Автор: Oliver Haeberlen,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-02-06.

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

Номер патента: US20170033191A1. Автор: Oliver Haeberlen,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-02-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230387306A1. Автор: Martin Christopher Holland,Mark Van Dal,Gerben Doornbos,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Method of manufacturing a semiconductor device with metal gate etch selectivity control

Номер патента: US20180174915A1. Автор: Yi-Wei Chiu,Chia-Ching Tsai,Li-Te Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11830947B2. Автор: Martin Christopher Holland,Mark Van Dal,Gerben Doornbos,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Method of manufacturing a semiconductor device including removing a relief layer from back surface of semiconductor chip

Номер патента: US09646856B2. Автор: Thorsten Meyer,Klaus Reingruber,David O'Sullivan. Владелец: INTEL DEUTSCHLAND GMBH. Дата публикации: 2017-05-09.

Manufacturing method of three-dimensional semiconductor device including contact plugs

Номер патента: US12046512B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-23.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: US20060128089A1. Автор: Viet Nguyen Hoang,Dirk Gravesteijn,Romano Julma Hoofman. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-06-15.

Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

Номер патента: US20080124909A1. Автор: Keum-Joo Lee,Jin-Hye Bae,Dae-Keun Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-29.

Semiconductor device, method of designing a layout of a semiconductor device, and method of manufacturing a semiconductor device

Номер патента: US10474783B2. Автор: SUBHASH KUCHANURI,Sidharth Rastogi,Jae-Seok Yang,Chul-Hong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-12.

Method of manufacturing a semiconductor device

Номер патента: US20150303096A1. Автор: Ming Zhang,Yasuki Yoshihisa. Владелец: Renesas Electronics Corp. Дата публикации: 2015-10-22.

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same

Номер патента: US20150048428A1. Автор: Szu-Lin Cheng,Isaac Lauer,Jack Oon Chu,Jeng-Bang Yau. Владелец: International Business Machines Corp. Дата публикации: 2015-02-19.

Method of manufacturing a semiconductor device

Номер патента: US6358835B1. Автор: Ryuichi Kanamura. Владелец: Sony Corp. Дата публикации: 2002-03-19.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170170122A1. Автор: Rainer Mintzlaff,Hans-Martin Ritter,Frank Burmeister,Jochen Wynants,Joachim Utzig,Godfried Henricus Josephus Notermans. Владелец: NXP BV. Дата публикации: 2017-06-15.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200321433A1. Автор: Isamu SUGAI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-08.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09870923B2. Автор: Toshiyuki Matsui. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-01-16.

Manufacturing method of high-voltage semiconductor device with increased breakdown voltage

Номер патента: US11769794B2. Автор: Chao Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-26.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240266225A1. Автор: Chih-Chang Hung,Tzu-Ging LIN,Shun- Hui YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Methods of manufacturing a semiconductor device by forming a separation trench

Номер патента: US09935055B2. Автор: Andreas Meiser,Markus Zundel,Martin Poelzl,Georg Ehrentraut,Paul Ganitzer. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-04-03.

Method of forming a semiconductor device

Номер патента: US12040218B2. Автор: Frederick Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2024-07-16.

Method of producing a semiconductor device

Номер патента: US20020009888A1. Автор: Akira Mizumura. Владелец: Sony Corp. Дата публикации: 2002-01-24.

Method of manufacturing a semiconductor device

Номер патента: US09349834B2. Автор: Thorsten Meyer,Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-05-24.

Method of manufacturing a semiconductor device and an apparatus for use in such a method

Номер патента: EP1647045A1. Автор: Ingrid A. Rink,Reinoldus B. M. Vroom. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-04-19.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12062580B2. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Structure and method of forming a semiconductor device with resistive elements

Номер патента: US12074107B2. Автор: Wen-Sheh Huang,Yung-Shih Cheng,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Method of Manufacturing a Semiconductor Device Having a Rear-Side Insert Structure

Номер патента: US20160300719A1. Автор: Anton Mauder,Hans-Joachim Schulze,Johannes Georg Laven,Erich Griebl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-10-13.

Structure and method of forming a semiconductor device with resistive elements

Номер патента: US20240371757A1. Автор: Wen-Sheh Huang,Yung-Shih Cheng,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240355681A1. Автор: Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Method of forming a semiconductor device

Номер патента: US09923092B2. Автор: Thierry Coffi Herve Yao,Moshe Agam. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-03-20.

Method of manufacturing a semiconductor device and semiconductor integrated circuit wafer

Номер патента: US09431321B2. Автор: Kazuyuki Higashi,Shinya Watanabe,Taku Kamoto. Владелец: Toshiba Corp. Дата публикации: 2016-08-30.

Method of manufacturing a semiconductor device

Номер патента: US11145733B1. Автор: Chia-Jung Hsu,Chih-Kai Hsu,Ssu-I Fu,Chun-Ya Chiu,Chin-Hung Chen,Yu-Hsiang Lin,Po-Wen Su,Chung-Fu Chang,Chun-Tsen Lu,Guang-Yu Lo. Владелец: United Microelectronics Corp. Дата публикации: 2021-10-12.

Method of manufacturing a semiconductor device

Номер патента: US20130178067A1. Автор: Eunsung KIM,Chulho Shin,Han Geun Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

Method of forming a semiconductor device comprising first and second nitride layers

Номер патента: US09601384B2. Автор: Kanta Saino. Владелец: Micron Technology Inc. Дата публикации: 2017-03-21.

Semiconductor device and method of manufacturing such semiconductor device

Номер патента: US20150325519A1. Автор: Hermanus Leonardus Peek,Willem Hendrik Maes,Wilco Klaassens. Владелец: Teledyne Dalsa BV. Дата публикации: 2015-11-12.

Semiconductor device and method of manufacturing such semiconductor device

Номер патента: EP2842164A1. Автор: Hermanus Leonardus Peek,Willem Hendrik Maes,Wilco Klaassens. Владелец: Teledyne Dalsa BV. Дата публикации: 2015-03-04.

Method of manufacturing a semiconductor device

Номер патента: US7592260B2. Автор: Min Chul Gil. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-09-22.

Method of Manufacturing a Semiconductor Device

Номер патента: US20080057735A1. Автор: Min Chul Gil. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-03-06.

Method of manufacturing a semiconductor device with a contact hole

Номер патента: US20020182854A1. Автор: Junichi Miyano,Kiyohiko Toshikawa,Yoshikazu Motoyama. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-12-05.

Method of making a semiconductor device with V2V rail

Номер патента: US12125792B2. Автор: Hui-Zhong ZHUANG,Chih-Liang Chen,Jung-Chan YANG,Chi-Yu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Methods of fabricating a semiconductor device

Номер патента: US09564325B2. Автор: Hyunwoo Kim,Ki-Jeong Kim,Hyosung Lee,Chawon KOH,Cheol Hong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-07.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: WO2007148277A3. Автор: Fred Hurx,Johannes Josephus Theo Donkers. Владелец: Johannes Josephus Theo Donkers. Дата публикации: 2008-02-28.

Semiconductor device, method of designing a layout of a semiconductor device, and method of manufacturing a semiconductor device

Номер патента: US20180157781A1. Автор: SUBHASH KUCHANURI,Sidharth Rastogi,Jae-Seok Yang,Chul-Hong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-07.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: EP1719164A1. Автор: Gerben Doornbos,Marcus J. H. Van Dal,Radu C. Surdeanu. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-11-08.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: EP2038919A2. Автор: Johannes Josephus Theodorus Marinus Donkers,Fred Hurx. Владелец: NXP BV. Дата публикации: 2009-03-25.

Method of manufacturing a semiconductor device, and semiconductor device obtained by such a method

Номер патента: WO2007148277A2. Автор: Johannes Josephus Theodorus Marinus Donkers,Fred Hurx. Владелец: NXP B.V.. Дата публикации: 2007-12-27.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US9147579B2. Автор: Reiko Hiruta. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-09-29.

Method of manufacturing a semiconductor device by ion implantation through an ion-sensitive resist

Номер патента: US5037767A. Автор: Peter J. Daniel. Владелец: US Philips Corp. Дата публикации: 1991-08-06.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method

Номер патента: EP1880415A1. Автор: Jan Sonsky,Philippe Meunier-Beillard. Владелец: NXP BV. Дата публикации: 2008-01-23.

Method of fabricating a semiconductor device

Номер патента: US20090042383A1. Автор: Ki-Hyun Hwang,Jin Gyun Kim,Bon-young Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-12.

Method of making a semiconductor device

Номер патента: EP4290583A3. Автор: Alexander Viktorovich Bolotnikov,Peter Almem LOSEE,Yang Sui. Владелец: General Electric Co. Дата публикации: 2023-12-27.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US20200395244A1. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US11791209B2. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Method of forming a semiconductor device and structure therefor

Номер патента: US20200395478A1. Автор: Peter A. Burke,Dean E. Probst,Prasad Venkatraman. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-12-17.

Method of making a semiconductor device

Номер патента: EP4290583A2. Автор: Alexander Viktorovich Bolotnikov,Peter Almem LOSEE,Yang Sui. Владелец: General Electric Co. Дата публикации: 2023-12-13.

Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device

Номер патента: US20230043714A1. Автор: Seung-Heon Lee,Tae-Jong Han,Jaekang Koh,Munjun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-09.

Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same

Номер патента: US20150221643A1. Автор: Szu-Lin Cheng,Isaac Lauer,Jack Oon Chu,Jeng-Bang Yau. Владелец: GlobalFoundries US 2 LLC. Дата публикации: 2015-08-06.

Methods of Manufacturing a Semiconductor Device by Forming a Separation Trench

Номер патента: US20170012002A1. Автор: Andreas Meiser,Markus Zundel,Martin Poelzl,Georg Ehrentraut,Paul Ganitzer. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-01-12.

Method of manufacturing a semiconductor device

Номер патента: US11935757B2. Автор: Ching-Yu Chang,Chin-Hsiang Lin,Yen-Hao Chen,Wei-Han Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-19.

Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation

Номер патента: US20230317830A1. Автор: Tsung-Lin Lee,Chih Chieh Yeh,Da-Wen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200135897A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210265490A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230361202A1. Автор: Georgios Vellianitis,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen,Marcus Johannes Henricus. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Method of manufacturing a semiconductor device

Номер патента: US11894446B2. Автор: Ling-Yen Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-06.

Method of Manufacturing a Semiconductor Device

Номер патента: US20160268397A1. Автор: Thorsten Meyer,Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-09-15.

Method of fabricating a semiconductor device

Номер патента: US11830874B2. Автор: Yoon Tae Hwang,Wandon Kim,Geunwoo Kim,Hyunbae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

Method of Fabricating a Semiconductor Device

Номер патента: US20240038848A1. Автор: Carsten Ahrens,Helmut Brech,Matthias Zigldrum. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-01.

Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

Номер патента: US11968828B2. Автор: Yong-Shiuan Tsair,Meng-Han LIN,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Method of manufacturing a semiconductor device

Номер патента: US20240145582A1. Автор: Ling-Yen Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Method of manufacturing a semiconductor device

Номер патента: US20240105842A1. Автор: Sunghwan JANG,Pyung MOON,Dohee Kim,Sunguk JANG,Mina SEOL. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11764289B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via

Номер патента: US12100644B2. Автор: Thomas Bodner,Joerg Siegert,Bernhard Loeffler. Владелец: ams AG. Дата публикации: 2024-09-24.

Semiconductor device having hybrid bonding interface, method of manufacturing the semiconductor device, and method of manufacturing semiconductor device assembly

Номер патента: US20210242050A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2021-08-05.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240282695A1. Автор: Jae Ho Kim. Владелец: SK hynix Inc. Дата публикации: 2024-08-22.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210013144A1. Автор: Ji Yeon Ryu,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-01-14.

Wafer and method of making, and semiconductor device

Номер патента: US20230215815A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-06.

Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via

Номер патента: EP3900030A1. Автор: Jörg Siegert,Bernhard LÖFFLER,Thomas Bodner. Владелец: ams AG. Дата публикации: 2021-10-27.

Semiconductor device with through-substrate via and method of manufacturing a semiconductor device with through-substrate via

Номер патента: US20220059434A1. Автор: Thomas Bodner,Joerg Siegert,Bernhard Loeffler. Владелец: ams AG. Дата публикации: 2022-02-24.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230292500A1. Автор: Mi Ra CHOI. Владелец: SK hynix Inc. Дата публикации: 2023-09-14.

Method of fabricating a semiconductor device

Номер патента: US20160064234A1. Автор: yu chao Lin,Chao-Cheng Chen,Chih-tang Peng,Shun-Hui YANG,Ryan Chia-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-03.

Method of fabricating a semiconductor device including a plurality of isolation features

Номер патента: US09685344B2. Автор: yu chao Lin,Chao-Cheng Chen,Chih-tang Peng,Shun-Hui YANG,Ryan Chia-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-20.

Method of manufacturing a semiconductor device

Номер патента: US12040308B2. Автор: Jin Woong Kim,Sung Kyu Kim. Владелец: SK hynix Inc. Дата публикации: 2024-07-16.

Method of manufacturing a semiconductor device

Номер патента: US20150364458A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Wen-De Wang,Cheng-Ying Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-12-17.

Semiconductor device and method of forming the semiconductor device

Номер патента: US09966308B2. Автор: Chih-Chao Yang,Lawrence A. Clevenger,Baozhen Li,II John E. Sheets,Junli Wang,Kirk David Peterson. Владелец: International Business Machines Corp. Дата публикации: 2018-05-08.

Methods of fabricating a semiconductor device

Номер патента: US20170345679A1. Автор: Sangjin Kim,TaeYong KWON,Yunkyeong JANG,Donghoon HWANG,Sebeom OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-30.

Method of manufacturing a semiconductor device

Номер патента: US20160372368A1. Автор: Jian-Hong Lin,Shiou-Fan CHEN,Chwei-Ching Chiu,Yung-Huei Lee,Hsin-Chun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-22.

Method of manufacturing a semiconductor device

Номер патента: US09941159B2. Автор: Jian-Hong Lin,Shiou-Fan CHEN,Chwei-Ching Chiu,Yung-Huei Lee,Hsin-Chun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-10.

Method of etching a semiconductor device

Номер патента: US7144749B2. Автор: Khim Hong Ng,Chin Ling Pong. Владелец: Systems on Silicon Manufacturing Co Pte Ltd. Дата публикации: 2006-12-05.

Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device

Номер патента: US09779931B2. Автор: Hans-Joachim Schulze,Johannes Freund,Helmut Oefner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-03.

Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device

Номер патента: US8349078B2. Автор: Makoto Kiyama,Hiromu Shiomi,Seiji Nakahata,Akihiro Hachigo,Yu Saitoh,Kazuhide Sumiyoshi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-08.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230299016A1. Автор: Myoungsoo Kim,Jisung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-21.

Semiconductor devices including scribe lane and method of manufacturing the semiconductor devices

Номер патента: US11756843B2. Автор: Junghoon Han,Junyong NOH,Yeonjin Lee,Minjung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-12.

Method of manufacturing a semiconductor device

Номер патента: US20230317456A1. Автор: Hans-Joachim Schulze,Moriz Jelinek,Werner Schustereder,Francisco Javier Santos Rodriguez,Daniel Schlögl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-10-05.

Method of manufacturing a semiconductor device

Номер патента: US20190080964A1. Автор: Hiroyuki Utsunomiya. Владелец: Ablic Inc. Дата публикации: 2019-03-14.

Method of manufacturing a semiconductor device

Номер патента: US9818735B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Wen-De Wang,Cheng-Ying Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Method of forming a semiconductor device

Номер патента: US11888024B2. Автор: Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-30.

Method of forming a semiconductor device

Номер патента: US20170186838A1. Автор: Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-06-29.

Manufacturing method of ultra-thin semiconductor device package assembly

Номер патента: US09881897B2. Автор: Chih-Cheng Hsieh,Hsiu-wen Hsu. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2018-01-30.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US09685333B2. Автор: Fumikazu Imai,Tsunehiro Nakajima,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-20.

Manufacturing method of ultra-thin semiconductor device package assembly

Номер патента: US20160211240A1. Автор: Chih-Cheng Hsieh,Hsiu-wen Hsu. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2016-07-21.

Method of making a semiconductor device having a functional capping

Номер патента: US09620390B2. Автор: Thorbjörn Ebefors,Edvard Kalvesten,Tomas Bauer. Владелец: SILEX MICROSYSTEMS AB. Дата публикации: 2017-04-11.

Method of manufacturing a semiconductor device having reduced on-state resistance and structure

Номер патента: US09893058B2. Автор: Michael J. Seddon,Francis J. Carney. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-02-13.

Method of Producing a Semiconductor Device and Semiconductor Device Having a Through-Wafer Interconnect

Номер патента: US20120286430A1. Автор: Jochen Kraft,Jordi Teva. Владелец: austriamicrosystems AG. Дата публикации: 2012-11-15.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20240186368A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-06.

Method of manufacturing a semiconductor device

Номер патента: US20130221440A1. Автор: Shigeru Mori. Владелец: NLT Technologeies Ltd. Дата публикации: 2013-08-29.

Method of manufacturing a semiconductor device

Номер патента: US20070259512A1. Автор: Kentaro Yamada,Masato Takahashi,Yasuhiro Obara,Takeshi Katoh,Yoshio Fukayama,Masaki Sakashita,Tatsuyuki Konagaya,Koichiro Takei. Владелец: Individual. Дата публикации: 2007-11-08.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240298446A1. Автор: Dong Hun Lee,In Su Park,Jung Dal Choi,Jung Shik JANG,Mi Seong PARK. Владелец: SK hynix Inc. Дата публикации: 2024-09-05.

Methods of forming a semiconductor device

Номер патента: US20080227258A1. Автор: Keon-Soo Kim,Jae-Hwang Sim,Jae-Kwan Park,Sang-Yong Park,Sung-Hyun KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-09-18.

Semiconductor device, battery management system and method of producing a semiconductor device

Номер патента: EP4310891A1. Автор: Paul Frank,Mark Pavier,Sandra Ebner,Evelyn Napetschnig,Christian Ranacher,Stanislav VITANOV. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-24.

Methods of forming a semiconductor device with a gate structure having a dielectric protection layer

Номер патента: US11749753B2. Автор: Ming-Hsi Yeh,Jian-Jou LIAN,Chun-Neng LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

Номер патента: US11961865B2. Автор: Kosuke Nakanishi,Hideaki Togashi. Владелец: Sony Group Corp. Дата публикации: 2024-04-16.

Semiconductor device, battery management system and method of producing a semiconductor device

Номер патента: US20240030502A1. Автор: Paul Frank,Mark Pavier,Sandra Ebner,Evelyn Napetschnig,Christian Ranacher,Stanislav VITANOV. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-25.

Method of manufacturing a semiconductor device

Номер патента: US20050048708A1. Автор: Kentaro Yamada,Masato Takahashi,Yasuhiro Obara,Takeshi Katoh,Yoshio Fukayama,Masaki Sakashita,Tatsuyuki Konagaya,Koichiro Takei. Владелец: Renesas Technology Corp. Дата публикации: 2005-03-03.

Method of manufacturing a semiconductor device

Номер патента: US20230317454A1. Автор: Ji Hoon Kim,Jae Han Park,Chang Hun Lee. Владелец: SK hynix Inc. Дата публикации: 2023-10-05.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US11929392B2. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-12.

Method of manufacturing a semiconductor device

Номер патента: CA1176761A. Автор: Jose Solo De Zaldivar. Владелец: Jose Solo De Zaldivar. Дата публикации: 1984-10-23.

Method of manufacturing a semiconductor device

Номер патента: CA1150855A. Автор: Marnix G. Collet,Hermanus L. Peek. Владелец: Hermanus L. Peek. Дата публикации: 1983-07-26.

Manufacturing method for crystalline semiconductor film, semiconductor device, and display device

Номер патента: US20130140573A1. Автор: Yoshinobu Nakamura. Владелец: Individual. Дата публикации: 2013-06-06.

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

Номер патента: US20160308052A1. Автор: Byeong-Chan Lee,Jin-Bum Kim,Kwan-Heum Lee,Cho-Eun LEE,Su-Jin JUNG,Seok-Hoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-20.

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

Номер патента: US09755076B2. Автор: Byeong-Chan Lee,Jin-Bum Kim,Kwan-Heum Lee,Cho-Eun LEE,Su-Jin JUNG,Seok-Hoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-05.

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

Номер патента: US09553192B2. Автор: Byeong-Chan Lee,Jin-Bum Kim,Kwan-Heum Lee,Cho-Eun LEE,Su-Jin JUNG,Seok-Hoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-24.

Method of manufacturing a semiconductor device

Номер патента: US09490178B2. Автор: Joon-Hyung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-08.

Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method

Номер патента: WO2004070831A1. Автор: Yukiko Furukawa. Владелец: Interuniversitair Microelektronica Centrum Vzw,. Дата публикации: 2004-08-19.

Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereon

Номер патента: US20030100184A1. Автор: Hsiao-Che Wu. Владелец: Individual. Дата публикации: 2003-05-29.

Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer

Номер патента: US09666706B2. Автор: Young-Jin Cho,Sang-Moon Lee,Ki-ha Hong,Kyoung-Yeon Kim,Eui-chul HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20210013039A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2021-01-14.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: WO2019159680A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO. Дата публикации: 2019-08-22.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US11501971B2. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2022-11-15.

Wafer and method of making, and semiconductor device

Номер патента: US20230230936A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

Method of forming a semiconductor device

Номер патента: US20110294235A1. Автор: Takuro Maede. Владелец: Elpida Memory Inc. Дата публикации: 2011-12-01.

Two-dimensional material structure, semiconductor device including the two-dimensional material structure, and method of manufacturing the semiconductor device

Номер патента: US20230112883A1. Автор: Minsu Seol,Keunwook SHIN,Changseok Lee,JunYoung KWON,Minseok YOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-13.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20130330896A1. Автор: Tsuyoshi Ishikawa,Masahiro Sugimoto,Toshimasa Yamamoto,Yukihiko Watanabe,Hidefumi Takaya,Narumasa Soejima,Shinichiro Miyahara. Владелец: Toyota Motor Corp. Дата публикации: 2013-12-12.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210242309A1. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-05.

Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Номер патента: US20230084276A1. Автор: Hyunsuk Lee,Gihee CHO,Sangyeol KANG,Jungoo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-16.

Semiconductor Device Including a Trench at Least Partially Filled with a Conductive Material in a Semiconductor Substrate and Method of Manufacturing a Semiconductor Device

Номер патента: US20160035842A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-02-04.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: EP3945599A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220262955A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-18.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180158914A1. Автор: Shoji Kitamura,Kazuhiro Kitahara,Tsukasa TASHIMA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-07.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240274668A1. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210296439A1. Автор: Yu-Lin Yang,I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-23.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240250175A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Method of manufacturing a semiconductor device and the semiconductor device

Номер патента: US8907423B2. Автор: Tadahiro MIWATASHI. Владелец: Renesas Electronics Corp. Дата публикации: 2014-12-09.

Method of manufacturing a semiconductor device and the semiconductor device

Номер патента: US20130087854A1. Автор: Tadahiro MIWATASHI. Владелец: Renesas Electronics Corp. Дата публикации: 2013-04-11.

Method of manufacturing a semiconductor device

Номер патента: US20090155971A1. Автор: Jong-wook Lee,Yong-Hoon Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-18.

Method of manufacturing a semiconductor device

Номер патента: US20020127785A1. Автор: Naoto Kusumoto,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-09-12.

Method of forming a semiconductor device structure

Номер патента: US20210111021A1. Автор: Luc Haspeslagh,Robert Langer,Vasyl Motsnyi,Philippe Soussan,Bernardette Kunert,Stefano Guerrieri,Olga SYSHCHYK. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2021-04-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12119394B2. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240371982A1. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of forming a semiconductor device and semiconductor device

Номер патента: US09954065B2. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch,Johannes Baumgartl,Ingo Muri,Iris Moder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-24.

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device

Номер патента: US09799732B2. Автор: Takashi Tsuji,Kenji Fukuda,Noriyuki Iwamuro. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-24.

Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method

Номер патента: US09793348B2. Автор: Jan Sonsky. Владелец: NXP BV. Дата публикации: 2017-10-17.

Methods of manufacturing a semiconductor device

Номер патента: US09508716B2. Автор: Teng-Chun Tsai,Chih-Hao Wang,Kuo-Yin Lin,Chi-Yuan Chen,Li-Ting Wang,Kuo-Cheng Ching,Ching-Wei Tsai,Cheng-Tung Lin,Huicheng Chang,Wan-Chun Pan,Ming-Liang Yen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-29.

Method of manufacturing a semiconductor device including a plurality of channel patterns

Номер патента: US11069580B2. Автор: Songse YI,Naery YU,Sumin KIM,Jeongho MUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-20.

Method of manufacturing a semiconductor device including a plurality of channel patterns

Номер патента: US20210013110A1. Автор: Songse YI,Naery YU,Sumin KIM,Jeongho MUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-14.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11842998B2. Автор: ChoongHyun Lee,Jingyun Zhang,Hemanth Jagannathan,Chun Wing Yeung,Robin Hsin Kuo Chao. Владелец: International Business Machines Corp. Дата публикации: 2023-12-12.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220029024A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-27.

Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same

Номер патента: US09548238B2. Автор: Szu-Lin Cheng,Isaac Lauer,Jack O. Chu,Jeng-Bang Yau. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-17.

Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device

Номер патента: US09368408B2. Автор: Marko Lemke,Rolf Weis,Stefan Tegen. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2016-06-14.

Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

Номер патента: US20040092090A1. Автор: Eun-Jung Yun,Kong-Soo Lee,Yong-woo Hyung,Jae-jong Han,Seung-Mok Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-05-13.

Semiconductor device assembly including a chip carrier, semiconductor wafer and method of manufacturing a semiconductor device

Номер патента: US09768120B2. Автор: Anton Mauder,Khalil Hosseini,Philipp Seng. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-09-19.

Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure

Номер патента: US09711357B1. Автор: Hans Weber,Andreas Moser,Johannes Baumgartl,Gabor Mezoesi. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-07-18.

Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices

Номер патента: US09646869B2. Автор: Ming Zhang,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-05-09.

Method of manufacturing a semiconductor device

Номер патента: US8399351B2. Автор: Masashi Takahashi. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2013-03-19.

Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device

Номер патента: US20140042593A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-02-13.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11776852B2. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12057445B2. Автор: Szu-Ping Tung,Hsiang-Ku Shen,Dian-Hau Chen,Chen-Chiu Huang,Wen-Tzu Chen,Guan-Yao TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Method of manufacturing a semiconductor device

Номер патента: US20060134865A1. Автор: Tsukasa Doi,Hiroyuki Inuzuka,Kazumasa Mitsumune. Владелец: Sharp Corp. Дата публикации: 2006-06-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230037025A1. Автор: Szu-Ping Tung,Hsiang-Ku Shen,Dian-Hau Chen,Chen-Chiu Huang,Wen-Tzu Chen,Guan-Yao TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20200105608A1. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-02.

Methods of Forming a Semiconductor Device Having a Contact Structure

Номер патента: US20110151658A1. Автор: Changhun Lee,Keemoon Chun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-06-23.

Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device

Номер патента: US09425063B2. Автор: Hans-Joachim Schulze. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-08-23.

Manufacturing method for crystal, crystal, and semiconductor device

Номер патента: US20110254017A1. Автор: Shin Harada,Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-10-20.

Etching method and method of fabricating a semiconductor device using the same

Номер патента: US09972696B2. Автор: Sang Won Bae,Hoyoung Kim,Wonsang Choi,Jae-Jik Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-15.

Method of fabricating a semiconductor device

Номер патента: US09755057B1. Автор: Po-Wen Su,Shui-Yen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-05.

Methods of fabricating a semiconductor device

Номер патента: US09530870B2. Автор: Nam-Kyu Kim,Seokhoon Kim,Jinbum Kim,Gyeom KIM,Byeongchan Lee,Kwan Heum Lee,Choeun LEE,Sujin JUNG,Dong Chan Suh,Jieon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-27.

Method of manufacturing a semiconductor device

Номер патента: US20110318910A1. Автор: Haruo Nakazawa,Motoyoshi KUBOUCHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-12-29.

Method of forming a semiconductor device

Номер патента: US20140363939A1. Автор: Masaki Nagata. Владелец: ROHM CO LTD. Дата публикации: 2014-12-11.

Methods of fabricating a semiconductor device

Номер патента: US09911828B2. Автор: NAKJIN SON,Yeon Ho Park,Kyungsoo Kim,Wookhyun Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-06.

Method of manufacturing nitride semiconductor device

Номер патента: US09691875B2. Автор: Hajime Sasaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-06-27.

Method of manufacturing a semiconductor device with lateral FET cells and field plates

Номер патента: US09660055B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-05-23.

Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion

Номер патента: US09601376B2. Автор: Carsten Von Koblinski,Hans-Joachim Schulze,Gerhard Schmidt,Andre Brockmeier,Francisco Javier Santos Rodriguez,Alexander Breymesser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-03-21.

Method of manufacturing a semiconductor device

Номер патента: US09418852B2. Автор: Haruo Nakazawa,Motoyoshi KUBOUCHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-08-16.

Method of Manufacturing a Semiconductor Device Having a Trench at Least Partially Filled with a Conductive Material in a Semiconductor Substrate

Номер патента: US20170148887A1. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-05-25.

Methods of forming a semiconductor device including a diffusion barrier film

Номер патента: US7816255B2. Автор: Gil-heyun Choi,Kyung-In Choi,Jong-Won Hong,Jong-Myeong Lee,Hyun-Bae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-10-19.

Method of fabricating a semiconductor device having a pre metal dielectric liner

Номер патента: US20070155111A1. Автор: Sung Kyung Jung. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-07-05.

Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrate

Номер патента: US09842904B2. Автор: Anton Mauder,Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-12-12.

Method of manufacturing nitride semiconductor device using laminated cap layers

Номер патента: US09805930B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-31.

Method of forming a semiconductor device with air gaps for low capacitance interconnects

Номер патента: US20220130723A1. Автор: Kandabara Tapily. Владелец: Tokyo Electron Ltd. Дата публикации: 2022-04-28.

Method of manufacturing a semiconductor device and recording medium

Номер патента: US20160284552A1. Автор: Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-09-29.

Deposition methods of forming a layer while rotating the substrate in angular increments and methods of manufacturing a semiconductor device using the same

Номер патента: US09698021B2. Автор: Weon-Hong Kim,Soo-Jung Choi,Moon-Kyun Song,Dong-Su Yoo,Min-Joo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-04.

Method of manufacturing a semiconductor device and recording medium

Номер патента: US09666439B2. Автор: Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-05-30.

Method of manufacturing a semiconductor device including a barrier structure

Номер патента: US09548376B2. Автор: Xiaomeng Chen,Chia-Shiung Tsai,Chung-Yi Yu,Chi-Ming Chen,Po-Chun Liu,Chen-Hao Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-17.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Номер патента: US10134583B2. Автор: Sang Ick Lee,Younjoung CHO,Myong Woon Kim,Sang Yong Jeon,Jungsik CHOI,Sunhye HWANG,In Kyung JUNG,Wonwoong Chung. Владелец: DNF Co Ltd. Дата публикации: 2018-11-20.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Номер патента: US20170207083A1. Автор: Younjoung CHO,Myong Woon Kim,Sang Yong Jeon,Jungsik CHOI,Sunhye HWANG,Sang lck Lee,In Kyung JUNG,Wonwoong Chung. Владелец: DNF Co Ltd. Дата публикации: 2017-07-20.

Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing

Номер патента: US20070298596A1. Автор: Keum-Joo Lee,Kyoung-Chul Kim,Byoung-Yong Gwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-27.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20080200020A1. Автор: Dale C. Jacobson,Wade A. Krull. Владелец: Semequip Inc. Дата публикации: 2008-08-21.

Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method

Номер патента: CA1216969A. Автор: Johannes A. Appels,Henricus G.R. Maas. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1987-01-20.

Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method

Номер патента: US4052269A. Автор: Jacques Michel,Michel Iost. Владелец: US Philips Corp. Дата публикации: 1977-10-04.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20180047582A1. Автор: Marko Lemke,Carsten Moritz,Alfred Vater. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2018-02-15.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230369464A1. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of manufacturing a semiconductor device

Номер патента: US8962428B2. Автор: Lele CHEN. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2015-02-24.

Method of Manufacturing a Semiconductor Device and Semiconductor Device

Номер патента: US20210013320A1. Автор: Hans-Joachim Schulze,Helmut Strack,Jens Peter Konrath,Andre Rainer Stegner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-01-14.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210313454A1. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-07.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11757023B2. Автор: Yu-Cheng Shen,Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: EP1728270A1. Автор: Bartlomiej J. Pawlak. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2006-12-06.

Method of monitoring a semiconductor device fabrication process and method of fabricating a semiconductor device using the same

Номер патента: US20220068728A1. Автор: Youngjoo Lee,Taekyun KANG,Hyowon Bae,Sang Yoon Han,Jitae PARK,Doo Young Gwak,Aekyung KIM,Kyunggon You,Seongjin IN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-03.

Method of manufacturing a semiconductor device

Номер патента: US5106782A. Автор: Tadashi Matsuno,Hideki Shibata,Kazuhiko Hashimoto,Hisayo Momose. Владелец: Toshiba Corp. Дата публикации: 1992-04-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11367784B2. Автор: Shih-Chieh Chang,Cheng-Han Lee,Shahaji B. More,Chien Lin,Shu Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-21.

Method of manufacturing a semiconductor device with capacitor electrodes

Номер патента: US6890817B2. Автор: Takashi Uehara,Hiroshi Maeda,Toshiyuki Oashi. Владелец: Renesas Technology Corp. Дата публикации: 2005-05-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11942552B2. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Method of Forming a Semiconductor Device and Semiconductor Device

Номер патента: US20170133465A1. Автор: Anton Mauder,Hans-Joachim Schulze,Frank Pfirsch,Johannes Baumgartl,Ingo Muri,Iris Moder. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-11.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210074840A1. Автор: Che-Cheng Chang,Chih-Han Lin,Chang-Yin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-11.

Method of manufacturing a semiconductor device

Номер патента: US20150064913A1. Автор: Toshiyuki Sasaki,Mitsuhiro Omura,Kazuhisa Matsuda,Tsubasa IMAMURA. Владелец: Toshiba Corp. Дата публикации: 2015-03-05.

A semiconductor device and a method of manufacturing a semiconductor device

Номер патента: EP4276912A1. Автор: Steven Peake,MD Imran Siddiqui. Владелец: Nexperia BV. Дата публикации: 2023-11-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11855211B2. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device

Номер патента: US20150115287A1. Автор: Takashi Tsuji,Kenji Fukuda,Noriyuki Iwamuro. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-04-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240088294A1. Автор: Chun Hsiung Tsai,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11984324B2. Автор: Yu-chen Wei,Feng-Inn Wu,Tzi-Yi Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device

Номер патента: US20150187654A1. Автор: Marko Lemke,Rolf Weis,Stefan Tegen. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2015-07-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12002855B2. Автор: Yi-Jen Chen,Chih-Shan Chen,Chih-Teng Liao,Jui Fu Hsieh,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Semiconductor device including graphene and method of manufacturing the semiconductor device

Номер патента: US12027589B2. Автор: Hyeonjin Shin,Seongjun Park,Yunseong LEE,Keunwook SHIN,Seunggeol NAM,Yeonchoo CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240203750A1. Автор: Yu-chen Wei,Feng-Inn Wu,Tzi-Yi Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Method of manufacturing a semiconductor device using SEG and a transitory substrate

Номер патента: US4970175A. Автор: Jan Haisma,Johannes E. A. M. van den Meerakker,Josephus H. C. van Vegchel. Владелец: US Philips Corp. Дата публикации: 1990-11-13.

Method of manufacturing a semiconductor device

Номер патента: CA1165012A. Автор: Pieter J.W. Jochems. Владелец: Pieter J.W. Jochems. Дата публикации: 1984-04-03.

Laser irradiation method and method of manufacturing a semiconductor device

Номер патента: US7560397B2. Автор: Shunpei Yamazaki,Hiroshi Shibata,Koichiro Tanaka,Masaaki Hiroki,Mai Akiba. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2009-07-14.

Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates

Номер патента: US9287404B2. Автор: Till Schloesser,Andreas Meiser,Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-03-15.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US11869963B2. Автор: John Twynam,Albert Birner,Helmut Brech. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-09.

Method of manufacturing nitride semiconductor device

Номер патента: US20170092493A1. Автор: Tohru Oka,Takahiro Fujii,Masayoshi Kosaki,Takaki Niwa. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-03-30.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

Номер патента: US11862476B2. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230411215A1. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Tatwan Semiconductor Manufacturing Comany Ltd. Дата публикации: 2023-12-21.

Method of manufacturing a semiconductor device

Номер патента: US09805980B2. Автор: Tadashi Munakata,Noriyuki Takahashi,Yoshihiko Yamaguchi,Shingo Oosaka,Mitsuru Kinoshita. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-31.

Method of making a semiconductor device

Номер патента: RU2606780C1. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2017-01-10.

Fabrication system of semiconductor device and method of fabricating a semiconductor device using the same

Номер патента: US20200348599A1. Автор: Jinhong Park,Seungmin Lee,Suntaek LIM,Jinseok Heo,Keunhee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-05.

Method of forming a semiconductor device and structure therefor

Номер патента: US09646951B2. Автор: Sudhama C. Shastri,Richard D. Moyers. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-05-09.

Method of manufacturing a semiconductor device

Номер патента: US20240014063A1. Автор: Kai Cheng,Tsau-Hua Hsieh,Fang-Ying Lin. Владелец: Innolux Corp. Дата публикации: 2024-01-11.

Method of manufacturing a semiconductor device

Номер патента: US20070184634A1. Автор: Shinya Suzuki,Masatoshi Iwasaki,Toshiaki Sawada. Владелец: Renesas Technology Corp. Дата публикации: 2007-08-09.

Method of manufacturing a semiconductor device

Номер патента: US20110049709A1. Автор: Noriyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-03-03.

Method of Manufacturing a Semiconductor Device

Номер патента: US20120007238A1. Автор: Noriyuki Takahashi. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-12.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

Номер патента: US20220085174A1. Автор: Andre Brockmeier,Francisco Javier Santos Rodriguez,Ronny Kern,Matteo Piccin,Guenter Denifl,Michael KNABL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2022-03-17.

Method of forming a semiconductor device and structure therefor

Номер патента: MY175969A. Автор: D Moyers Richard,C Shastri Sudhama. Владелец: Semiconductor Components Ind Llc. Дата публикации: 2020-07-17.

Methods of forming a semiconductor cell array region, method of forming a semiconductor device including the semiconductor cell array region, and method of forming a semiconductor module including the semiconductor device

Номер патента: US20110177671A1. Автор: Yong-Hoon Son,Byeong-Chan Lee,Sun-Ghil Lee,Sung-Woo Hyun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-21.

Method of manufacturing a semiconductor device and such a semiconductor device

Номер патента: US20090166799A1. Автор: Youri Ponomarev,Vincent Charles Venezia,Josine Johanna Gerarda Petra Loo. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2009-07-02.

Method of fabricating a semiconductor device with reduced oxide film variation

Номер патента: US7947567B2. Автор: Masanori Terahara,Junji Oh. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-05-24.

Method of fabricating a semiconductor device

Номер патента: US20040253800A1. Автор: Yong-Sun Ko,Sang-Sup Jeong,Jae-Woo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-12-16.

Method of manufacturing a semiconductor device, pattern correction apparatus, and computer-readable recording medium

Номер патента: US20080241972A1. Автор: Tomohiko Yamamoto. Владелец: Fujitsu Ltd. Дата публикации: 2008-10-02.

Method of manufacturing a semiconductor device having a trench isolation structure

Номер патента: US6455381B1. Автор: Masahiro Shimizu,Yoshitaka Fujiishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-09-24.

Method of forming patterns and method of manufacturing a semiconductor device using the same

Номер патента: US09905754B1. Автор: Jong-Kyu Kim,Sang-Kuk Kim,Yil-hyung LEE,Yoo-Chul Kong,Hye-Ji YOON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Method of manufacturing a semiconductor device

Номер патента: US20240258174A1. Автор: Ming-Hsi Yeh,Clement Hsingjen Wann,Chih-Hsin Ko,Yu-Ming Lin,Chun Hsiung Tsai,Kuo-Feng Yu,Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer

Номер патента: US20180211830A1. Автор: Hyo-Sun Lee,Jung Hun Lim,Hoyoung Kim,Soojin Kim,Tae Soo Kwon,Hoon Han,Keonyoung KIM,Jinhye Bae. Владелец: Individual. Дата публикации: 2018-07-26.

Method of manufacturing a semiconductor device

Номер патента: IE52979B1. Автор: . Владелец: Philips Nv. Дата публикации: 1988-04-27.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20110089513A1. Автор: Nobuyuki Endo. Владелец: Canon Inc. Дата публикации: 2011-04-21.

Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device

Номер патента: US8492805B2. Автор: Masaaki Takizawa,Kentaro Akiyama. Владелец: Sony Corp. Дата публикации: 2013-07-23.

Solid-state imaging device, manufacturing method thereof, electronic apparatus, and semiconductor device

Номер патента: US20130288419A1. Автор: Masaaki Takizawa,Kentaro Akiyama. Владелец: Sony Corp. Дата публикации: 2013-10-31.

Method of manufacturing a semiconductor device

Номер патента: US5401671A. Автор: Shigeki Komori,Katsuhiro Tsukamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-03-28.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

Номер патента: US11990520B2. Автор: Andre Brockmeier,Francisco Javier Santos Rodriguez,Ronny Kern,Matteo Piccin,Guenter Denifl,Michael KNABL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-05-21.

Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby

Номер патента: US6602725B2. Автор: Masanobu Iwasaki,Yuichi Sakai,Hiroyuki Chibahara,Kakutaro Suda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-08-05.

Low cost method of fabricating epitaxial semiconductor devices

Номер патента: US5360509A. Автор: Joseph Y. Chan,Gregory Zakaluk,Dennis Garbis,John Latza,Lawrence Laterza. Владелец: GI Corp. Дата публикации: 1994-11-01.

Methods of forming a semiconductor device

Номер патента: US20200312857A1. Автор: Kuo-Chen Wang,Mohd Kamran Akhtar,Katsumi Koge,Guangjun Yang,Arzum F. Simsek-Ege. Владелец: Micron Technology Inc. Дата публикации: 2020-10-01.

Method of producing a semiconductor device

Номер патента: CA1217576A. Автор: Hiroshi Goto. Владелец: Fujitsu Ltd. Дата публикации: 1987-02-03.

Method of manufacturing a semiconductor device

Номер патента: US20090004826A1. Автор: Hyun Park,Byung-hong Chung,Jeong-lim Nam,Young-Hoo Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-01-01.

Method of manufacturing a semiconductor device

Номер патента: US5405803A. Автор: Takahisa Kusaka. Владелец: Sony Corp. Дата публикации: 1995-04-11.

Method of fabricating a semiconductor device

Номер патента: US6465295B1. Автор: Kenji Kitamura. Владелец: Seiko Instruments Inc. Дата публикации: 2002-10-15.

Method of manufacturing a semiconductor device using trench isolation

Номер патента: US5830796A. Автор: Kyeong Bock Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1998-11-03.

Method of forming a semiconductor device

Номер патента: US20080044980A1. Автор: Hans-Peter Moll,Frank Ludwig,Rolf Weis,Kimberly Wilson,Phillip Stopford. Владелец: Qimonda AG. Дата публикации: 2008-02-21.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US09960040B2. Автор: Mitsuo Okamoto,Youichi Makifuchi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-01.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20110306188A1. Автор: Kazuhiro Tsuruta,Nobuyuki Kato,Jun Kawai. Владелец: Denso Corp. Дата публикации: 2011-12-15.

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

Номер патента: US11735654B2. Автор: Shuhei Mitani,Yuichi Takeuchi,Ryota Suzuki,Yusuke Yamashita,Aiko KAJI. Владелец: Denso Corp. Дата публикации: 2023-08-22.

Method of making a semiconductor device having multiple die redistribution layer

Номер патента: US20080160674A1. Автор: Hem Takiar,Shrikar Bhagath. Владелец: SanDisk Corp. Дата публикации: 2008-07-03.

Method of manufacturing a semiconductor device

Номер патента: US09564334B2. Автор: Haruo Nakazawa,Masaaki Ogino,Kenichi Iguchi,Tsunehiro Nakajima,Masaaki TACHIOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-02-07.

Method of manufacturing a semiconductor device

Номер патента: US09548205B2. Автор: Haruo Nakazawa,Masaaki Ogino,Kenichi Iguchi,Tsunehiro Nakajima,Masaaki TACHIOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-01-17.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230352397A1. Автор: Eiji HIRAIWA. Владелец: Renesas Electronics Corp. Дата публикации: 2023-11-02.

Methods of manufacturing a semiconductor device

Номер патента: GB1355806A. Автор: J R A Beale. Владелец: Mullard Ltd. Дата публикации: 1974-06-05.

Semiconductor device having a shielding layer and a method of fabricating the semiconductor device

Номер патента: US20240194745A1. Автор: Ling Ma,Robert Haase,Timothy Henson. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-06-13.

Semiconductor device having a redistribution bonding interconnection, a method of manufacturing the semiconductor device, and a chip stack package including the semiconductor device

Номер патента: US20230230960A1. Автор: Jun Yong Song,Kang Hun KIM,Si Yun KIM. Владелец: SK hynix Inc. Дата публикации: 2023-07-20.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190279921A1. Автор: Kiyoaki Kadoi. Владелец: Ablic Inc. Дата публикации: 2019-09-12.

Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Номер патента: EP1683201A1. Автор: Michael James Paisley,Joseph John Sumakeris,Hudson McDonald Hobgood,Jason Ronald Jenny,Jr. Calvin H. Carter,Valeri Fedorovich Tsvetkov. Владелец: Cree Inc. Дата публикации: 2006-07-26.

Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Номер патента: CA2542704A1. Автор: Calvin H. Carter, Jr.,Michael James Paisley,Joseph John Sumakeris,Hudson McDonald Hobgood,Jason Ronald Jenny,Valeri Fedorovich Tsvetkov. Владелец: Individual. Дата публикации: 2005-05-06.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240047384A1. Автор: Hsiang-Tai Lu,Yang-Che CHEN,Chi-Hui Lai,Wei-Ray Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-08.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240297127A1. Автор: Mohamed Salleh Mohamed Saheed,Murugalogeswaran Permal. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-09-05.

Method of manufacturing a semiconductor device

Номер патента: US09349694B2. Автор: Soichi Homma,Yuusuke Takano,Katsunori Shibuya,Shinpei Ishida. Владелец: Toshiba Corp. Дата публикации: 2016-05-24.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170170089A1. Автор: Johannes Josephus Theodorus Marinus Donkers,Mark Andrzej Gajda,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2017-06-15.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210013196A1. Автор: Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-14.

Silicon carbide semiconductor device, power conversion device, and manufacturing method of silicon carbide semiconductor device

Номер патента: US12027590B2. Автор: Munetaka Noguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-07-02.

Method of making a semiconductor device having a thermal contact

Номер патента: US12094799B2. Автор: FENG HAN,Jian Wu,Shuai ZHANG. Владелец: TSMC China Co Ltd. Дата публикации: 2024-09-17.

Manufacturing method of high voltage semiconductor device

Номер патента: US12080794B2. Автор: Tsung-Yu Yang,Shin-Hung Li,Chang-Po Hsiung,Nien-Chung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-03.

Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby

Номер патента: EP1027725A2. Автор: Jun Zeng,Carl Franklin Wheatley. Владелец: HARRIS CORP. Дата публикации: 2000-08-16.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20240274512A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-15.

Semiconductor device and method of making a semiconductor device

Номер патента: US09947632B2. Автор: CHI HO Leung,Shun Tik Yeung,Pompeo V Umali,Wai (Kan Wae) Lam. Владелец: Nexperia BV. Дата публикации: 2018-04-17.

Method of manufacturing a semiconductor device using a halo implantation

Номер патента: EP1234335B1. Автор: Zoran Krivokapic,Brian Swanson,Ahmad Ghaemmaghami. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-11-15.

Semiconductor device and method of making a semiconductor device

Номер патента: US20220344506A1. Автор: Kejun Xia,Saumitra Raj Mehrotra. Владелец: NXP USA Inc. Дата публикации: 2022-10-27.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09620499B2. Автор: Yusuke Yamashita,Satoru Machida,Yasuhiro Hirabayashi. Владелец: Toyota Motor Corp. Дата публикации: 2017-04-11.

Method of Manufacturing a Semiconductor Device Including an Edge Area

Номер патента: US20140302667A1. Автор: Anton Mauder,Hans-Joachim Schulze,Franz Hirler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2014-10-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230039627A1. Автор: Ching-Hung Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-09.

Method of fabricating a semiconductor device using laser annealing

Номер патента: US20230180473A1. Автор: LEI Liu,Zhiliang Xia,Kun Zhang,Zongliang Huo,Yuancheng YANG,Dongyu FAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-06-08.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20180122930A1. Автор: Shinichi Okamoto,Tsutomu Okazaki. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-03.

Semiconductor Device Including Trenches and Method of Manufacturing a Semiconductor Device

Номер патента: US20140151789A1. Автор: Hans-Joachim Schulze,Wolfgang Wagner,Francisco Javier Santos Rodriguez,Yvonne Gawlina,Hans Peter Felsl,Andre Rainer Stegner,Maria Cotorogea,Georg Seibert. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-06-05.

Method of manufacturing a semiconductor device having a trench surrounding plural unit cells

Номер патента: US20080274599A1. Автор: Kenya Kobayashi. Владелец: NEC Electronics Corp. Дата публикации: 2008-11-06.

Method of fabricating a semiconductor device including high-K metal gate having reduced threshold voltage variation

Номер патента: US09570361B1. Автор: Takashi Ando,David J. Frank. Владелец: International Business Machines Corp. Дата публикации: 2017-02-14.

Method of making a semiconductor device having a thermal contact

Номер патента: US20220384296A1. Автор: FENG HAN,Jian Wu,Shuai ZHANG. Владелец: TSMC China Co Ltd. Дата публикации: 2022-12-01.

Method of forming a semiconductor device

Номер патента: US11488829B1. Автор: Kuan-Ying LAI,Chung-Yi Chiu,Chang-Mao Wang,Hsin-Yu Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2022-11-01.

Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method

Номер патента: US8237224B2. Автор: Ryo Nakamura. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2012-08-07.

Method of forming a semiconductor device

Номер патента: US20220367192A1. Автор: Kuan-Ying LAI,Chung-Yi Chiu,Chang-Mao Wang,Hsin-Yu Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2022-11-17.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20060163719A1. Автор: Tetsuya Kaji,Megumi Yamamura,Toshihide Shimmei. Владелец: Toshiba Corp. Дата публикации: 2006-07-27.

Method of Manufacturing a Semiconductor Device

Номер патента: US20130309831A1. Автор: Da YANG,Huilong Zhu,Haizhou Yin,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-11-21.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09941273B2. Автор: Akitaka SOENO. Владелец: Toyota Motor Corp. Дата публикации: 2018-04-10.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US09530884B2. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-27.

Methods of fabricating a semiconductor device having a metal gate pattern

Номер патента: US20060270205A1. Автор: Chang-Won Lee,Sung-Man Kim,Sun-pil Youn,Ja-hum Ku,Seong-Jun Heo. Владелец: Individual. Дата публикации: 2006-11-30.

Methods of fabricating a semiconductor device having a metal gate pattern

Номер патента: US7306996B2. Автор: Chang-Won Lee,Sung-Man Kim,Sun-pil Youn,Ja-hum Ku,Seong-Jun Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-12-11.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20020179979A1. Автор: Gyu-Chul Kim,Han-Soo Kim,Yong Park,Kang-Sik Cho,Hoo-Seung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-12-05.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240297253A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09786565B2. Автор: Hiroyuki Ohta,Hidenobu Fukutome,Mitsugu Tajima. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2017-10-10.

Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

Номер патента: US09608070B2. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-03-28.

Method of Manufacturing a Semiconductor Device with a Metal-Filled Groove in a Polysilicon Gate Electrode

Номер патента: US20180026130A1. Автор: Ralf Siemieniec,Oliver Blank,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-01-25.

Method of Manufacturing a Semiconductor Device by Plasma Doping

Номер патента: US20170062587A1. Автор: Hans-Joachim Schulze,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-03-02.

Semiconductor devices having a multi-oxide semiconductor channel layer and methods of manufacturing the semiconductor devices

Номер патента: US20230127755A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

Номер патента: US09917163B2. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-13.

Method of manufacturing a semiconductor device

Номер патента: US09685446B2. Автор: Tomonori MIZUSHIMA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-20.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US09525043B2. Автор: Hans-Joachim Schulze,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-12-20.

Method of manufacturing a semiconductor device

Номер патента: US20050250326A1. Автор: Tomoko Matsuda. Владелец: NEC Electronics Corp. Дата публикации: 2005-11-10.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20210143113A1. Автор: Katsuhiro TAKAO. Владелец: Aoi Electronics Co Ltd. Дата публикации: 2021-05-13.

Method of manufacturing a semiconductor device

Номер патента: EP1275137A1. Автор: Antonius M. P. J. Hendriks,Margriet L. Diekema. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-01-15.

Method of fabricating a semiconductor device

Номер патента: US20080076213A1. Автор: Chun-Chieh Chang,Tzung-Yu Hung,Chao-Ching Hsieh. Владелец: United Microelectronics Corp. Дата публикации: 2008-03-27.

Method of manufacturing a semiconductor device having scribe lines

Номер патента: US09728477B2. Автор: Hao-Yi Tsai,Chao-Wen Shih,Yung-Ping Chiang,Nien-Fang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-08.

Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device

Номер патента: US09564435B2. Автор: Toshiro Nakanishi,Jung-Dal Choi,Dong-Kyu Lee,Eun-ae Chung,Gab-jin Nam,Guangfan Jiao,Yu-Bin Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-07.

Method of manufacturing nitride semiconductor device

Номер патента: US20130143373A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-06-06.

Methods of manufacturing a semiconductor device

Номер патента: US20120184079A1. Автор: Byeong-Chan Lee,Seung-Hun Lee,Jin-Bum Kim,Kwan-Heum Lee,Sun-Ghil Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-19.

Method of manufacturing a semiconductor device and semiconductor wafer

Номер патента: US20200381256A1. Автор: Roland Rupp,Hans-Joachim Schulze,Francisco Javier Santos Rodriguez. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-12-03.

Method of Manufacturing a Semiconductor Device

Номер патента: US20080020567A1. Автор: Byung-hee Kim,Dae-Yong Kim,Eun-ji Jung,Hyun-Su Kim,Jong-Ho Yun,Eun-Ok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Method of operating a semiconductor device having an IGBT and desaturation channel structure

Номер патента: US09621133B2. Автор: Hans-Joachim Schulze,Johannes Georg Laven. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-04-11.

Method of making a semiconductor device including an all around gate

Номер патента: US20140357036A1. Автор: Huiming Bu,Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2014-12-04.

Manufacturing method of high voltage semiconductor device

Номер патента: US20230335637A1. Автор: Tsung-Yu Yang,Shin-Hung Li,Chang-Po Hsiung,Nien-Chung Li. Владелец: United Microelectronics Corp. Дата публикации: 2023-10-19.

Method of Fabricating a Semiconductor Device

Номер патента: US20150031195A1. Автор: Jihoon Kim,Eun Tae Kim,Jin Ho Oh,Jongmyeong Lee,Heesook Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-01-29.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20230145810A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-05-11.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20210376147A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2021-12-02.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US20230411519A1. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-12-21.

High voltage semiconductor device and manufacturing method of high voltage semiconductor device

Номер патента: US11791409B2. Автор: Tae Hoon Lee,Jin Seong Chung. Владелец: Key Foundry Co Ltd. Дата публикации: 2023-10-17.

Method of manufacturing a semiconductor device comprising a field effect transistor

Номер патента: WO1999027576A3. Автор: Louis Praamsma. Владелец: Philips Svenska AB. Дата публикации: 1999-09-02.

Method of manufacturing a semiconductor device

Номер патента: US20130244385A1. Автор: Naoto Saitoh. Владелец: Seiko Instruments Inc. Дата публикации: 2013-09-19.

Method of manufacturing a semiconductor device

Номер патента: US20160268398A1. Автор: Shinichi Kawamura. Владелец: Japan Display Inc. Дата публикации: 2016-09-15.

Method of manufacturing a semiconductor device

Номер патента: US9620624B2. Автор: Shinichi Kawamura. Владелец: Japan Display Inc. Дата публикации: 2017-04-11.

Methods of operating power semiconductor devices and structures

Номер патента: US09842917B2. Автор: Jun Zeng,Richard A. Blanchard,Mohamed N. Darwish. Владелец: MaxPower Semiconductor Inc. Дата публикации: 2017-12-12.

Method of manufacturing a semiconductor device

Номер патента: US09620624B2. Автор: Shinichi Kawamura. Владелец: Japan Display Inc. Дата публикации: 2017-04-11.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US10840169B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-11-17.

Semiconductor device and a method of making a semiconductor device

Номер патента: US10153365B2. Автор: Philip Rutter,Steven Thomas Peake,Chris Rogers. Владелец: Nexperia BV. Дата публикации: 2018-12-11.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11915998B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-02-27.

Semiconductor device and a method of making a semiconductor device

Номер патента: US20170077291A1. Автор: Philip Rutter,Steven Thomas Peake,Chris Rogers. Владелец: Nexperia BV. Дата публикации: 2017-03-16.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20210090977A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-03-25.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11417589B2. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2022-08-16.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20200266132A1. Автор: Tae Yong Lee,Hyung Jun CHO,Kyoung Yeon Lee,Jae Min Bae. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-08-20.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: US7348229B2. Автор: Bartlomiej Jan Pawlak,Raymond James Duffy. Владелец: NXP BV. Дата публикации: 2008-03-25.

Method of manufacturing a semiconductor device

Номер патента: US20150104904A1. Автор: Eiji Osugi. Владелец: Renesas Electronics Corp. Дата публикации: 2015-04-16.

Method of manufacturing a semiconductor device

Номер патента: US11901359B2. Автор: Jin Won Lee,Hyun Ho Jung,Jeong Yun Lee,Seung Soo Hong,Geum Jung Seong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-13.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: EP1579488A1. Автор: Marcus J. H. Van Dal,Jacob C. Hooker,Vincent C. Venezia,Charles J. J. Dachs. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2005-09-28.

Semiconductor device and method of making a semiconductor device

Номер патента: EP4080583A1. Автор: Kejun Xia,Saumitra Raj Mehrotra. Владелец: NXP USA Inc. Дата публикации: 2022-10-26.

Method of manufacturing a semiconductor device

Номер патента: US7410869B2. Автор: Sang-Hoon Lee,Hyeon-deok Lee,Jung-Hyun Park,Woong Lee,Hun-Hyeoung Leam,Won-Jun Jang,Young-Sub You,Jung-Geun Jee,Sang-Kyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-08-12.

Method of fabricating a semiconductor device

Номер патента: CA1179787A. Автор: Shyam P. Murarka,Chuan C. Chang,Dawon Kahng,James A. Cooper, Jr.. Владелец: Western Electric Co Inc. Дата публикации: 1984-12-18.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220359746A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220013662A1. Автор: Yan-Ting Shen,Chia-Chi Yu,Yu-Li Lin,Chih-Teng Liao,Chih Hsuan Cheng,Tzu-Chan Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-13.

Method of Manufacturing a Semiconductor Device and Semiconductor Device

Номер патента: US20160093731A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-03-31.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240170339A1. Автор: Chih-Yuan Ting,Huan-Just Lin,Wen-Kuo HSIEH,Te-Chih Hsiung,Yang-Cheng WU,Yun-Hua Chen,Yi-Hsuan Chiu,Bing-Sian WU,Sheng-Hsun Fu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US20230253471A1. Автор: Tsuyoshi Tachi. Владелец: ROHM CO LTD. Дата публикации: 2023-08-10.

Method of manufacturing a semiconductor device having a channel extending vertically

Номер патента: US7910435B2. Автор: Hyoung-Seub Rhie. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-03-22.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20160322464A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-11-03.

Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device

Номер патента: US20170162660A1. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-06-08.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20200058762A1. Автор: Shih-Chi Fu,Chi-Kang Chang,Kuei-Shun Chen,Chien-Ping HUNG,Chi-Wen Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-20.

Method of forming a semiconductor device with metal silicide regions

Номер патента: US6268255B1. Автор: Paul R. Besser,Nicholas J. Kepler,Christian Zistl. Владелец: Advanced Micro Devices Inc. Дата публикации: 2001-07-31.

Method of manufacturing a semiconductor device

Номер патента: US5913114A. Автор: Chang-Ki Jeon,Cheol-Joong Kim,Sun-Hak Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1999-06-15.

Method of manufacturing a semiconductor device

Номер патента: US7022576B2. Автор: Yong Soo Cho. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2006-04-04.

Method of fabricating a semiconductor device

Номер патента: US5426064A. Автор: Yasuhiko Takemura,Toru Takayama,Hideki Uochi,Hognyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1995-06-20.

Method of producing compound semiconductor device

Номер патента: EP1363167A3. Автор: Hiroshi Kobayashi,Takanori Matsumoto,Akiyoshi Kudo. Владелец: EKC Technology KK. Дата публикации: 2007-06-06.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20240121953A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Method of forming a semiconductor device having impurity region

Номер патента: US20180158911A1. Автор: Alexander Schmidt,Yuichiro Sasaki,Tae Gon Kim,Bong Soo Kim,Seung Hyun Song,Abraham Yoo,Yoshiya Moriyama,Kyung In CHOI,Heung Soon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-07.

Method of forming a semiconductor device having impurity region

Номер патента: US10164017B2. Автор: Alexander Schmidt,Yuichiro Sasaki,Tae Gon Kim,Bong Soo Kim,Seung Hyun Song,Abraham Yoo,Yoshiya Moriyama,Kyung In CHOI,Heung Soon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-12-25.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US11889672B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-01-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230377984A1. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of manufacturing a semiconductor device

Номер патента: US20160254264A1. Автор: Tomonori MIZUSHIMA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-09-01.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11823957B2. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device

Номер патента: US20130175538A1. Автор: Jong-Seob Kim,In-jun Hwang,Jai-Kwang Shin,Jae-joon Oh,Hyuk-soon Choi,Jong-Bong Ha,Ki-ha Hong,Chang-Yong Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

Semiconductor device and method of forming extended semiconductor device with fan-out interconnect structure to reduce complexity of substrate

Номер патента: US09484319B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-11-01.

Manufacturing method of semiconductor device, method of testing the semiconductor device and wafer holding member

Номер патента: US20230411200A1. Автор: Koji Ogata,Tsuyoshi Kanao. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Method of forming a semiconductor device including a pitch multiplication

Номер патента: US09741582B2. Автор: Lionel LUPO. Владелец: Micron Technology Inc. Дата публикации: 2017-08-22.

Manufacturing method and support of semiconductor device

Номер патента: US20210280416A1. Автор: Tatsuo Migita. Владелец: Kioxia Corp. Дата публикации: 2021-09-09.

Method of separating a semiconductor device from a substrate

Номер патента: WO2024052695A1. Автор: Tongtong ZHU,Kunal Kashyap,Jia-liang TU,Kai-Jyun Huang. Владелец: Poro Technologies Ltd. Дата публикации: 2024-03-14.

Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures

Номер патента: US20140227863A1. Автор: Stefan Uhlenbrock,Eugene P. Marsh,Timothy A. Quick. Владелец: Micron Technology Inc. Дата публикации: 2014-08-14.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11158615B2. Автор: Won Geol Lee,Il Bok Lee,In Su Mok,Won Myoung Ki. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-10-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US12125832B2. Автор: Won Geol Lee,Il Bok Lee,In Su Mok,Won Myoung Ki. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-10-22.

Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures

Номер патента: US09735359B2. Автор: Gurtej S. Sandhu,John A. Smythe. Владелец: Micron Technology Inc. Дата публикации: 2017-08-15.

Optoelectronic semiconductor device and manufacturing method of an optoelectronic semiconductor device

Номер патента: WO2023222385A1. Автор: Anna Kasprzak-Zablocka,Tansen Varghese,Martin Hetzl. Владелец: Ams-Osram International Gmbh. Дата публикации: 2023-11-23.

Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device

Номер патента: US6987310B2. Автор: Moon-han Park,Ho Lee,Seung-Hwan Lee,Hwa-Sung Rhee,Jae-Yoon Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-01-17.

Method of fabricating a semiconductor device,method of cleaning a crystalline surface of a semiconductor,and semiconductor device

Номер патента: GB9506106D0. Автор: . Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-05-10.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20240372319A1. Автор: Tansen Varghese,Hubert Halbritter,Laura KREINER. Владелец: Ams Osram International GmbH. Дата публикации: 2024-11-07.

Production method of silicon carbide wafer, production method of semiconductor substrate, and production method of silicon carbide semiconductor device

Номер патента: US11795576B2. Автор: Yasushi Hibi,Bahman Soltani,Kazutoshi SASAYAMA. Владелец: Denso Corp. Дата публикации: 2023-10-24.

Method of severing a semiconductor device composite

Номер патента: US20160133520A1. Автор: Guido Weiss,Albert Perchtaler. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-05-12.

Method of manufacturing a semiconductor device

Номер патента: US09996658B2. Автор: Youngseok Kim,Noyoung CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-12.

Method of severing a semiconductor device composite

Номер патента: US09449879B2. Автор: Guido Weiss,Albert Perchtaler. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2016-09-20.

Method of manufacturing a semiconductor device

Номер патента: US20020019089A1. Автор: Masahiro Shimizu,Takashi Miyajima,Toshinori Morihara. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Method of manufacturing a semiconductor device

Номер патента: US6461796B1. Автор: Tatsuya Kunikiyo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-08.

Method of fabricating a semiconductor device

Номер патента: US20130034960A1. Автор: HAIYANG Zhang,Dongjiang Wang,Minda Hu. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2013-02-07.

Method of manufacturing a semiconductor device

Номер патента: US09791788B2. Автор: In-sung Kim,Jin-Seok Heo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-17.

Method of manufacturing a semiconductor device, method of processing a substrate, substrate processing apparatus, and recording medium

Номер патента: US09337015B2. Автор: Tsuyoshi Takeda,Taketoshi Sato,Minoru KOHASHI. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-05-10.

Manufacturing method and manufacturing apparatus for semiconductor device

Номер патента: US20100075509A1. Автор: Hironobu Hirata,Yoshikazu Moriyama,Masayoshi Yajima. Владелец: Nuflare Technology Inc. Дата публикации: 2010-03-25.

A method of fabricating a semiconductor device

Номер патента: MY151464A. Автор: Lee Hing Wah,Daniel Bien Chia SHENG,Rozina Abdul Rani,Mohd Ismahadi Syono. Владелец: MIMOS BERHAD. Дата публикации: 2014-05-30.

Method of manufacturing a semiconductor device

Номер патента: US20220359502A1. Автор: Jung-Hui Kao,Kong-Beng Thei,Fu-Jier Fan,Yi-huan Chen,Yi-Sheng Chen,Kau-Chu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Method of manufacturing a semiconductor device

Номер патента: US11328931B1. Автор: Yi-Jen Chen,Chih-Teng Liao,En-Ping Lin,I-Chung Wang,Yu-Ling Ko,Sheng-Kai Jou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-10.

Underlayer composition and method of manufacturing a semiconductor device

Номер патента: US12099301B2. Автор: Chien-Chih Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Underlayer composition and method of manufacturing a semiconductor device

Номер патента: US20240369932A1. Автор: Chien-Chih Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device

Номер патента: US09507254B2. Автор: Kazuhiro Hamamoto,Junichi Horikawa,Tsutomu Shoki,Toshihiko Orihara,Hirofumi Kozakai. Владелец: Hoya Corp. Дата публикации: 2016-11-29.

Method of growing nitride single crystal and method of manufacturing nitride semiconductor device

Номер патента: US09871162B2. Автор: Min Ho Kim,William SOLARI,Heon Ho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-16.

METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER

Номер патента: US20110111578A1. Автор: Masaki Ueno,Takao Nakamura,Yusuke Yoshizumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2011-05-12.

METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER

Номер патента: US20100279495A1. Автор: Masaki Ueno,Takao Nakamura,Yusuke Yoshizumi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-11-04.

Methods of manufacturing a semiconductor device

Номер патента: US20150227046A1. Автор: Jaeho Kim,Kyoungmi KIM,Jungsik CHOI,Jeong Ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-08-13.

Method of manufacturing a semiconductor device

Номер патента: US12135501B2. Автор: Ching-Yu Chang,Chen-Yu Liu,Chi-Ming Yang,Yen-Yu Chen,Tze-Liang Lee,Yi-Chen Kuo,Chih-Cheng Liu,Ming-Hui Weng,Jr-Hung Li,Yahru CHENG,Jia-Lin WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Method of manufacturing a semiconductor device

Номер патента: US09984887B2. Автор: Motomu DEGAI. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-05-29.

Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device

Номер патента: US09634012B2. Автор: Sung-hee Han,Tae-Jin Park,Eun-Jung Kim,Dae-Ik Kim,Yoo-Sang Hwang,Bong-Soo Kim,Yong-Kwan Kim,Chan-Sic Yoon,Hyeon-Ok Jung,Se-Myeong Jang,Ki-Seok Lee,Min-Su Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-25.

Methods of manufacturing a semiconductor device

Номер патента: US09535326B2. Автор: Jaeho Kim,Kyoungmi KIM,Jungsik CHOI,Jeong Ju Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-03.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: RU2678509C1. Автор: Акинори САКАКИБАРА. Владелец: Тойота Дзидося Кабусики Кайся. Дата публикации: 2019-01-29.

Method of packaging a semiconductor device and a prefabricated connector

Номер патента: EP2084743A2. Автор: Kenneth R. Burch,Marc A. Mangrum. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-08-05.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US8798110B2. Автор: Tatsuya Takeuchi,Taro Hasegawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2014-08-05.

Method of manufacturing a semiconductor device, in which a double layer-consisting of poly si and a silicide-present on a layer of silicon oxide is etched in a plasma

Номер патента: CA1243133A. Автор: Alfred J. Van Roosmalen,Anton P.M. Van Arendonk. Владелец: Anton P.M. Van Arendonk. Дата публикации: 1988-10-11.

Method of Forming a Semiconductor Device Having a Dummy Feature

Номер патента: US20080261375A1. Автор: Kevin Lucas,Rainer Thoma,Judith Mueller,Robert Boone,Yves Rody. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2008-10-23.

Method of manufacturing a semiconductor device using the same

Номер патента: US20190370429A1. Автор: Dong Chan Suh,Woo Bin Song,Kwang Sik JEONG,Mann-Ho Cho. Владелец: Industry Academic Cooperation Foundation of Yonsei University. Дата публикации: 2019-12-05.

Method of manufacturing a semiconductor device

Номер патента: CA1165903A. Автор: Jan Dieleman,Franciscus H.M. Sanders,Jozef A.M. Sanders. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1984-04-17.

Method of making a semiconductor device

Номер патента: GB1498096A. Автор: . Владелец: HITACHI LTD. Дата публикации: 1978-01-18.

A method of forming a semiconductor device

Номер патента: GB2247346A. Автор: Andrew Jonathan Moseley. Владелец: General Electric Co PLC. Дата публикации: 1992-02-26.

Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Номер патента: CA1216966A. Автор: Pieter J.W. Jochems. Владелец: Pieter J.W. Jochems. Дата публикации: 1987-01-20.

Method of making a semiconductor device

Номер патента: CA1090480A. Автор: Gerard A. Acket. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1980-11-25.

Method of manufacturing a semiconductor device

Номер патента: US4381967A. Автор: Jan Dieleman,Franciscus H. M. Sanders,Jozef A. M. Sanders. Владелец: US Philips Corp. Дата публикации: 1983-05-03.

Method of manufacturing a semiconductor device

Номер патента: US4870031A. Автор: TADASHI Nishimura,Yasuo Inoue,Shigeru Kusunoki,Kazuyuki Sugahara. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1989-09-26.

Method of manufacturing a semiconductor device by plasma etching of a double layer

Номер патента: US4698126A. Автор: Anton P. M. Van Arendonk,Alfred J. Van Roosmalen. Владелец: US Philips Corp. Дата публикации: 1987-10-06.

Photomask including fiducial mark and method of making a semiconductor device using the photomask

Номер патента: US11860532B2. Автор: Chih-Cheng Lin,Hsin-Chang Lee,Chia-Jen Chen,Ping-Hsun LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Method of manufacturing a semiconductor device

Номер патента: US6319812B1. Автор: Yoshinori Tanaka,Yoshifumi Takata,Masatoshi Anma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-11-20.

Method of manufacturing a semiconductor device and substrate processing apparatus

Номер патента: US20120009764A1. Автор: Atsushi Moriya,Takaaki Noda,Kiyohiko Maeda,Kiyohisa Ishibashi. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-01-12.

Method of manufacturing a semiconductor device

Номер патента: US11784046B2. Автор: Ching-Yu Chang,Chi-Ming Yang,Yen-Yu Chen,Tze-Liang Lee,Yi-Chen Kuo,Chih-Cheng Liu,Ming-Hui Weng,Jr-Hung Li,Yahru CHENG,Jia-Lin WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-10.

Method of manufacturing a semiconductor device

Номер патента: US20240145306A1. Автор: Daeseok Byeon,Taehong KWON,Gyosoo Choo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Semiconductor devices including seed structure and method of manufacturing the semiconductor devices

Номер патента: US11935858B2. Автор: Seungmin Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

Method of connecting multilevel semiconductor devices

Номер патента: RU2629904C2. Автор: Цзюньфэн ЧЖАО. Владелец: Интел Корпорейшн. Дата публикации: 2017-09-04.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240266238A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-08.

A method of manufacturing a semiconductor device, and a semiconductor device

Номер патента: WO2009013531A2. Автор: Paul Ronald Stribley. Владелец: X-Fab Semiconductor Foundries AG. Дата публикации: 2009-01-29.

Method of manufacturing a semiconductor device

Номер патента: US11923273B2. Автор: Chia-Tien Wu,Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

Method of fabricating a semiconductor device

Номер патента: US12051696B2. Автор: Jaeseok Yang,Taehyung Kim,Panjae PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-30.

Method of manufacturing a semiconductor device

Номер патента: USRE28703E. Автор: Ties Siebolt Te Velde,Hein Koelmans. Владелец: US Philips Corp. Дата публикации: 1976-02-03.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230253279A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-08-10.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210280484A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-09-09.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11978687B2. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-05-07.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200373214A1. Автор: Kyeong Tae Kim,Tae Yong Lee,Yi Seul Han,Jae Beom Shim. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-11-26.

Method of manufacturing a semiconductor device and a fabrication apparatus for a semiconductor device

Номер патента: US20050250254A1. Автор: Susumu Takada,Yoshihiko Kobayashi,Norinaga Arai,Shiro Oba,Kazutoshi Takashima,Tsutomu Ida,Shigeru Haga,Akio Ishizu,Yuji Kakegawa,Iwamichi Koujiro. Владелец: Hitachi Tohbu Semiconductor Ltd. Дата публикации: 2005-11-10.

Method of fabricating a semiconductor device including metal gate electrode and electronic fuse

Номер патента: US20090163016A1. Автор: Jin-woo Kim,Min-chul Sun,Hyung-Suk Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-25.

Semiconductor device, method of manufacturing the semiconductor device, flip chip package having the semiconductor device and method of manufacturing the flip chip package

Номер патента: US8530275B2. Автор: You-Seung Jin,Se-Young Lee,Geon-Woo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-10.

Semiconductor device, method of manufacturing the semiconductor device, flip chip package having the semiconductor device and method of manufacturing the flip chip package

Номер патента: US20120295402A1. Автор: You-Seung Jin,Se-Young Lee,Geon-Woo Park. Владелец: Individual. Дата публикации: 2012-11-22.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Semiconductor manufacturing method, semiconductor manufacturing apparatus and semiconductor device

Номер патента: US20190296001A1. Автор: Masatoshi Fukuda,Tetsuya Kurosawa,Toshihiko Ohda. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20220375901A1. Автор: Susumu Yamamoto,Tsutomu Fujita,Gen Toyota,Satoshi Hongo,Yukio KATAMURA,Takeori Maeda,Eiichi SHIN. Владелец: Kioxia Corp. Дата публикации: 2022-11-24.

Semiconductor device and method of forming PoP semiconductor device with RDL over top package

Номер патента: US09786623B2. Автор: Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-10-10.

Method of manufacturing a semiconductor device package having dummy dies

Номер патента: US12125822B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Method of forming a semiconductor device package having dummy dies

Номер патента: US20240371829A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method of forming encapsulated semiconductor device package

Номер патента: US09502323B2. Автор: Ming-Chih Yew,Kuo-Chuan Liu,Wen-Yi Lin,Po-Yao Lin,Cheng-Yi Hong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-22.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220262712A1. Автор: Ricardo Yandoc,Dilder Chowdhury,Ilyas Dchar. Владелец: Nexperia BV. Дата публикации: 2022-08-18.

Method of manufacturing a semiconductor device having a heat spreader

Номер патента: US20110104872A1. Автор: Yuko Sato,Takehiko Maeda,Fumiyoshi Kawashiro. Владелец: Renesas Electronics Corp. Дата публикации: 2011-05-05.

Manufacturing method of mis-type semiconductor device

Номер патента: US20140287572A1. Автор: Toru Oka,Junya Nishii,Takahiro Sonoyama,Kiyotaka MIZUKAMI. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2014-09-25.

Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layer

Номер патента: US9299567B2. Автор: Toru Oka,Junya Nishii,Takahiro Sonoyama,Kiyotaka MIZUKAMI. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2016-03-29.

Method of manufacturing a semiconductor device

Номер патента: US7534657B2. Автор: Yoshihiko Yamaguchi,Yusuke Ohta,Atsushi Fujishima. Владелец: Renesas Technology Corp. Дата публикации: 2009-05-19.

Method of Manufacturing a Semiconductor Device

Номер патента: US20110254150A1. Автор: Yoshimi Takahashi,Masazumi Amagai. Владелец: Texas Instruments Inc. Дата публикации: 2011-10-20.

Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor Device

Номер патента: US20240194778A1. Автор: Armin Willmeroth,Frank Hille,Michael Hell,Caspar Leendertz,Rudolf Elpelt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-06-13.

Method of manufacturing a semiconductor device

Номер патента: US20200152529A1. Автор: Hitomi Sakurai,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2020-05-14.

Method of manufacturing a semiconductor device

Номер патента: US10998246B2. Автор: Noriaki MINETA. Владелец: Renesas Electronics Corp. Дата публикации: 2021-05-04.

Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device

Номер патента: US09490243B2. Автор: Jean Philippe Laine,Patrice Besse. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-11-08.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20050140000A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2005-06-30.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20040157376A1. Автор: Marc De Samber,Johannus Weekamp,Durandus Dijken. Владелец: Individual. Дата публикации: 2004-08-12.

Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device

Номер патента: US09825020B2. Автор: Patrice Besse,Alexis Huot-Marchand,Alain SALLES,Jean-Philippe Laine. Владелец: NXP USA Inc. Дата публикации: 2017-11-21.

Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device

Номер патента: US09620495B2. Автор: Patrice Besse,Alexis Huot-Marchand,Alain SALLES,Jean-Philippe Laine. Владелец: NXP USA Inc. Дата публикации: 2017-04-11.

Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method

Номер патента: EP1360722A2. Автор: Thomas Weiss,Nicolaas J. A. Van Veen,Marc A. De Sambre. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-11-12.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20200343174A1. Автор: Junichi Murakami,Kota Nakamura,Hiromi Tominaga,Hidenori Shigeoka. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-10-29.

Method of forming a semiconductor device package with warpage control

Номер патента: US20240379640A1. Автор: Pei-Haw Tsao,Fu-Jen Li,Heh-Chang Huang,Shyue-Ter Leu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220262711A1. Автор: On Lok Chau,Fei WONG,Billie BI,Ivan Shiu,William Hor. Владелец: Nexperia BV. Дата публикации: 2022-08-18.

Method of forming a semiconductor device and structure therefor

Номер патента: US09520388B2. Автор: Thomas Keena,David M. Heminger. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-12-13.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US09953876B1. Автор: Elliot John Smith,Hans-Juergen Thees. Владелец: Globalfoundries Inc. Дата публикации: 2018-04-24.

Method of manufacturing a semiconductor device

Номер патента: US9082699B2. Автор: Nobuyuki SUZUKI,Satoshi Suzuki,Keiichi Sasaki,Masanobu Ohmura,Tomohiro Migita,Takatoshi Nakahara. Владелец: Canon Inc. Дата публикации: 2015-07-14.

Semiconductor Device and Method of Manufacturing a Semiconductor Device

Номер патента: US20190385852A1. Автор: Hans-Joachim Schulze,Moriz Jelinek,Werner Schustereder,Christian Krueger,Michael Kokot. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-12-19.

Method of manufacturing a semiconductor device and corresponding semiconductor device

Номер патента: EP4220692A1. Автор: Mauro Mazzola,Fabio Marchisi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-08-02.

Semiconductor device, method of manufacturing a semiconductor device, and positioning jig

Номер патента: US09991242B2. Автор: Kenichiro Sato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-05.

Lead frame, semiconductor device, and method of manufacturing the semiconductor device

Номер патента: US20080224280A1. Автор: Naoto Kimura. Владелец: NEC Electronics Corp. Дата публикации: 2008-09-18.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US20120015510A1. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-01-19.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US20110275204A1. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-11-10.

Method of fabricating a semiconductor device including ion implantation at a tilt angle in exposed regions

Номер патента: US7981782B2. Автор: Min Yong Lee,Yong Soo Jung. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-07-19.

Method of making flexible semiconductor device with graphene tape

Номер патента: US11456188B2. Автор: Zhijie Wang,Meng Kong Lye,You Ge. Владелец: NXP USA Inc. Дата публикации: 2022-09-27.

Method of manufacturing a semiconductor device

Номер патента: US20160079201A1. Автор: Won Chul Do,Jin Hee Park. Владелец: Amkor Technology Inc. Дата публикации: 2016-03-17.

Method of manufacturing a semiconductor device

Номер патента: US09905518B2. Автор: Hiroshi Okumura. Владелец: ROHM CO LTD. Дата публикации: 2018-02-27.

Method of manufacturing a semiconductor device

Номер патента: US20110183473A1. Автор: Naoto Kimura. Владелец: Renesas Electronics Corp. Дата публикации: 2011-07-28.

Method of forming a semiconductor device

Номер патента: US20070184601A1. Автор: Bich-Yen Nguyen,Da Zhang. Владелец: Individual. Дата публикации: 2007-08-09.

Method of fabricating a semiconductor device

Номер патента: US20100178736A1. Автор: Gottfried Beer,Irmgard Escher-Poeppel. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2010-07-15.

Methods of forming a semiconductor device

Номер патента: US8278168B2. Автор: Hoonjoo NA,Sangjin Hyun,Hongbae PARK,Hyung-seok HONG,Sunghun HONG,Hagju CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-10-02.

A semiconductor device and a method of manufacturing a semiconductor device

Номер патента: EP3996129A1. Автор: Adam Brown,Ricardo Yandoc,Manoj Balakrishnan,Anthony Matthew. Владелец: Nexperia BV. Дата публикации: 2022-05-11.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220139724A1. Автор: Adam Brown,Ricardo Yandoc,Manoj Balakrishnan,Anthony Matthew. Владелец: Nexperia BV. Дата публикации: 2022-05-05.

Methods of forming a semiconductor device

Номер патента: US20120009746A1. Автор: Hoonjoo NA,Sangjin Hyun,Hongbae PARK,Hyung-seok HONG,Sunghun HONG,Hagju CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-01-12.

Method of manufacturing a semiconductor device and the corresponding semiconductor device

Номер патента: EP4220693A1. Автор: Mauro Mazzola,Fabio Marchisi. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-08-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20210408757A1. Автор: Ramakanth Alapati,Darrell Paul Baker,Anthony B. Taguinod. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-12-30.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US11784457B2. Автор: Ramakanth Alapati,Darrell Paul Baker,Anthony B. Taguinod. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-10-10.

Method of manufacturing a semiconductor device

Номер патента: US10896869B2. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2021-01-19.

Method of manufacturing a semiconductor device, semiconductor device obtained by means of said method, and device for carrying outsuch a method

Номер патента: WO2004084294A1. Автор: Johannus W. Weekamp,Gerardus Van Herwijnen,Jacobus P. J. Van Os. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2004-09-30.

Semiconductor device and production method of the same semiconductor device

Номер патента: US20080258315A1. Автор: Sadayuki Okuma. Владелец: Elpida Memory Inc. Дата публикации: 2008-10-23.

Method of manufacturing a semiconductor device

Номер патента: US20230411257A1. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-12-21.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230378357A1. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11817500B2. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

Method of manufacturing a semiconductor device

Номер патента: US11764135B2. Автор: Siang Miang Yeo,Mohd Hasrul Bin ZULKIFLI. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-09-19.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20090289361A1. Автор: Seiya Fujii. Владелец: Elpida Memory Inc. Дата публикации: 2009-11-26.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210408286A1. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-30.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20150235994A1. Автор: Yoshihiro Sato,Takashi Ohba. Владелец: PS5 Luxco SARL. Дата публикации: 2015-08-20.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20230352370A1. Автор: George Scott,Kwang Seok Oh,Won Bae Bang. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-11-02.

Semiconductor device and method of fabricating the semiconductor device

Номер патента: US10242936B2. Автор: Norikazu Nakamura,Junji Kotani. Владелец: Fujitsu Ltd. Дата публикации: 2019-03-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US9484280B2. Автор: Tiam Meng PON,Theng Chao Long,Tian San Tan. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Method of manufacturing a semiconductor device including a semiconductor material of the aiibvi type,and semiconductor device manufactured by this method

Номер патента: US3585071A. Автор: Hein Koelmans. Владелец: US Philips Corp. Дата публикации: 1971-06-15.

A semiconductor device and a method of manufacturing such semiconductor device

Номер патента: EP4184566A1. Автор: Ricardo Yandoc,Dilder Chowdhury. Владелец: Nexperia BV. Дата публикации: 2023-05-24.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200185343A1. Автор: Shinjiro Kato,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2020-06-11.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20180269171A1. Автор: Shinjiro Kato,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2018-09-20.

Method of forming a semiconductor device structure and semiconductor device structure

Номер патента: US20180096894A1. Автор: Elliot John Smith,Hans-Juergen Thees. Владелец: Globalfoundries Inc. Дата публикации: 2018-04-05.

Semiconductor device and method of packaging a semiconductor device with a clip

Номер патента: US20130285249A1. Автор: Chee Chian Lim,Yoke Chin Goh,Boon Huat Lim. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-10-31.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20190122953A1. Автор: Yuki Inaba,Taiki Satou. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-04-25.

Semiconductor device and a method of manufacturing such semiconductor device

Номер патента: US20230163053A1. Автор: Ricardo Yandoc,Dilder Chowdhury. Владелец: Nexperia BV. Дата публикации: 2023-05-25.

Method of forming a semiconductor device and structure therefor

Номер патента: US20160126236A1. Автор: Thomas Keena,David M. Heminger. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-05-05.

Method of manufacturing a semiconductor device and a support plate, and a semiconductor device obtained by means of said method

Номер патента: WO2002017391A3. Автор: Johannes G P Mastboom,Karianne H Lindenhovius,Adrianus J M Vugts. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2003-10-09.

Semiconductor device package and method of making a semiconductor device package

Номер патента: US20120068323A1. Автор: Boon Huan Gooi,Chip King Tan. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2012-03-22.

Semiconductor device and method of enveloping the semiconductor device

Номер патента: CA1093704A. Автор: Gerard J. Scholten,Johannes Brandsma. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1981-01-13.

Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration

Номер патента: US4668306A. Автор: Jun-ichi Nishizawa. Владелец: Zaidan Hojin Handotai Kenkyu Shinkokai. Дата публикации: 1987-05-26.

Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device

Номер патента: US9824994B2. Автор: Takuya Kadoguchi. Владелец: Toyota Motor Corp. Дата публикации: 2017-11-21.

Method of manufacturing a semiconductor device including a stress film

Номер патента: US8383486B2. Автор: Hiroyuki Umimoto,Masafumi Tsutsui,Kaori Akamatsu. Владелец: Panasonic Corp. Дата публикации: 2013-02-26.

Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor device, display device, memory device, and electronic appliance

Номер патента: US09947802B2. Автор: Masayuki Kimura,Yukiko TOJO. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2018-04-17.

Methods of manufacturing trench semiconductor devices with edge termination structures

Номер патента: US20160276475A1. Автор: Jingjing Chen,Peilin Wang,Edouard deFresart. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-09-22.

Method of manufacturing a semiconductor device

Номер патента: US20020135074A1. Автор: Haruo Shimamoto,Kazushi Hatauchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-09-26.

Semiconductor chip, semiconductor wafer, semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20020013012A1. Автор: Masao Mitani,Jin Murayama. Владелец: Individual. Дата публикации: 2002-01-31.

Method of selectively transferring semiconductor device

Номер патента: US09508894B2. Автор: Chien-Fu Huang,Min-Hsun Hsieh,Chun-Yu Lin,Yi-Ming Chen,Chih-Chiang Lu,Ching-Pei Lin,Tzu-Chieh Hsu,Hao-Min Ku,Chung-Hsun Chien. Владелец: Epistar Corp. Дата публикации: 2016-11-29.

Method of making a semiconductor device

Номер патента: RU2606248C2. Автор: Гасан Абакарович Мустафаев,Арслан Гасанович Мустафаев,Абдулла Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ). Дата публикации: 2017-01-10.

Holder for a semiconductor substrate, and method of manufacturing a semiconductor device using such a holder

Номер патента: US20010040329A1. Автор: Johannes H. Tyveleijn. Владелец: US Philips Corp. Дата публикации: 2001-11-15.

Method of forming a semiconductor device including forming a shield conductor overlying a gate conductor

Номер патента: US09780196B2. Автор: Gordon M. Grivna,Prasad Venkatraman,Balaji Padmanabhan. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-10-03.

Method of manufacturing a semiconductor device and substrate carrier structure

Номер патента: US20110183496A1. Автор: Yuichi Kaneko. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-07-28.

Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations

Номер патента: US5384279A. Автор: Reinier De Werdt,Andre Stolmeijer,Paulus A. Van Der Plas,Paulus M. T. M. van Attekum,Hubertus Den Blanken. Владелец: US Philips Corp. Дата публикации: 1995-01-24.

Method of fabricating a semiconductor device

Номер патента: US20110079852A1. Автор: Robert James Pascoe Lander. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-04-07.

Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device

Номер патента: US09478531B2. Автор: Jean Philippe Laine,Patrice Besse. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-10-25.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area

Номер патента: US20230262975A1. Автор: Nhan Do,Serguei Jourba,Xian Liu,Leo XING,Zhuoqiang Jia. Владелец: Silicon Storage Technology Inc. Дата публикации: 2023-08-17.

Method of making a semiconductor device having a gate electrode with an hourglass shape

Номер патента: US7091094B2. Автор: Jeong-Hwan Son,Hyeong-Mo Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-08-15.

Vertical semiconductor device with body contact, method of manufacturing vertical semiconductor device with body contact, and electronic apparatus

Номер патента: US20240072173A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-02-29.

Semiconductor device and method of making a semiconductor device

Номер патента: US11817486B2. Автор: Steven Kwan,Jay Paul John,James Albert Kirchgessner. Владелец: NXP USA Inc. Дата публикации: 2023-11-14.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: US20220278119A1. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2022-09-01.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: US11737266B2. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2023-08-22.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20020074572A1. Автор: Takashi Akioka,Masao Shinozaki,Kinya Mitsumoto. Владелец: HITACHI LTD. Дата публикации: 2002-06-20.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20040150055A1. Автор: Takashi Akioka,Masao Shinozaki,Kinya Mitsumoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-08-05.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20020034843A1. Автор: Florin Udrea,Gehan Amaratunga. Владелец: Cambridge Semiconductor Ltd. Дата публикации: 2002-03-21.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20020155653A1. Автор: Masaaki Ikegami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-10-24.

Semiconductor device and method of making a semiconductor device

Номер патента: US09929263B2. Автор: Johannes Josephus Theodorus Marinus Donkers,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2018-03-27.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09812556B2. Автор: Raghavasimhan Sreenivasan,Qiqing C. Ouyang,Shogo Mochizuki,Alexander Reznicek,Pranita Kerber,Gen Tsutsui. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-07.

Method of manufacturing a semiconductor device, in which a high-breakdown-voltage mos transistor and a low-breakdown-voltage mos transistor are formed on an identical semiconductor substrate and semiconductor device manufactured thereby

Номер патента: US6916714B2. Автор: Atsushi Kanda,Yasushi Haga. Владелец: Seiko Epson Corp. Дата публикации: 2005-07-12.

Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device

Номер патента: US20230275128A1. Автор: Sangwoo Kim,Taehyeong Kim,Minsu Seol,Kyung-Eun Byun,Minseok SHIN,JunYoung KWON,Jaehwan Jung,Pin Zhao. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-08-31.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20220302267A1. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-22.

Nitride semiconductor device and method of manufacturing nitride semiconductor device

Номер патента: US20240304674A1. Автор: Kazuki IKEYAMA. Владелец: Mirise Technologies Corp. Дата публикации: 2024-09-12.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20060226558A1. Автор: Akihito Sakakidani,Toshinori Fukai. Владелец: NEC Electronics Corp. Дата публикации: 2006-10-12.

A method of manufacturing a semiconductor device and a semiconductor device

Номер патента: EP4372825A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-22.

Semiconductor device including emitter regions and method of manufacturing the semiconductor device

Номер патента: US12034065B2. Автор: Akihiro HIKASA. Владелец: ROHM CO LTD. Дата публикации: 2024-07-09.

System and method of testing a semiconductor device and method of fabricating the semiconductor device

Номер патента: US11137435B2. Автор: Yongho Cho,Junbae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-10-05.

System and method of testing a semiconductor device and method of fabricating the semiconductor device

Номер патента: US20200033389A1. Автор: Yongho Cho,Junbae KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-30.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240282639A1. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220319928A1. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-06.

Method of manufacturing the semiconductor device

Номер патента: US20040058530A1. Автор: Masaaki Ikegami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2004-03-25.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20110183483A1. Автор: Hyun-Woo CHUNG,Yong-Chul Oh,Hyun-Gi Kim,Jae-Man Yoon,Hui-jung Kim,Kang-Uk Kim. Владелец: Individual. Дата публикации: 2011-07-28.

Method of mounting a semiconductor device to a substrate and a mounted structure

Номер патента: US20020005293A1. Автор: Tomoo Murakami. Владелец: Individual. Дата публикации: 2002-01-17.

Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure

Номер патента: US09876111B2. Автор: Juergen Faul,Thorsten Kammler,Steffen Sichler,Peter Javorka,Sylvain Henri Baudot. Владелец: Globalfoundries Inc. Дата публикации: 2018-01-23.

Semiconductor device including emitter regions and method of manufacturing the semiconductor device

Номер патента: US09685544B2. Автор: Akihiro HIKASA. Владелец: ROHM CO LTD. Дата публикации: 2017-06-20.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09620632B2. Автор: Yusuke Yamashita,Satoru Machida,Jun OKAWARA. Владелец: Toyota Motor Corp. Дата публикации: 2017-04-11.

Method of bonding a semiconductor device using a compliant bonding structure

Номер патента: EP2404331A2. Автор: Stefano Schiaffino,John E. Epler,James G. Neff. Владелец: Philips Lumileds Lighing Co LLC. Дата публикации: 2012-01-11.

Method of bonding a semiconductor device using a compliant bonding structure

Номер патента: WO2010100577A2. Автор: Stefano Schiaffino,John E. Epler,James G. Neff. Владелец: PHILIPS LUMILEDS LIGHTING COMPANY, LLC. Дата публикации: 2010-09-10.

A method of manufacturing a semiconductor device

Номер патента: EP1057218A1. Автор: Pierre H. Woerlee,Andreas H. Montree,Jurriaan Schmitz. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2000-12-06.

A method of manufacturing a semiconductor device

Номер патента: WO2000038237A1. Автор: Pierre H. Woerlee,Andreas H. Montree,Jurriaan Schmitz. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2000-06-29.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: US20220137607A1. Автор: Philip Gröger. Владелец: KLA Corp. Дата публикации: 2022-05-05.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: EP4200903A1. Автор: Philip Gröger. Владелец: KLA Corp. Дата публикации: 2023-06-28.

Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Номер патента: WO2022093308A1. Автор: Philip Gröger. Владелец: KLA Corporation. Дата публикации: 2022-05-05.

Semiconductor device and methods of manufacturing the semiconductor device

Номер патента: US20240145563A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2024-05-02.

Method of manufacturing a semiconductor device

Номер патента: US20170256630A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2017-09-07.

Manufacturing method of housing for semiconductor device

Номер патента: US11806903B2. Автор: Hiroyuki Masumoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-11-07.

Manufacturing method of housing for semiconductor device

Номер патента: US20220134616A1. Автор: Hiroyuki Masumoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-05-05.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20140091319A1. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Fujitsu Ltd. Дата публикации: 2014-04-03.

Method of manufacturing a semiconductor device

Номер патента: US20120028455A1. Автор: Ichiro Yamamoto,Eiji Hasegawa,Naomi Fukumaki,Toshihiro Iizuka. Владелец: Renesas Electronics Corp. Дата публикации: 2012-02-02.

Method of manufacturing a semiconductor device

Номер патента: US8440521B2. Автор: Ichiro Yamamoto,Eiji Hasegawa,Naomi Fukumaki,Toshihiro Iizuka. Владелец: Renesas Electronics Corp. Дата публикации: 2013-05-14.

Method of manufacturing a semiconductor device having different kinds of insulating films with different thicknesses

Номер патента: US8435861B2. Автор: Junichi Ariyoshi,Kazutaka Yoshizawa. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-05-07.

Method of manufacturing a semiconductor device with a bicmos circuit

Номер патента: WO1996030941A3. Автор: Armand Pruijmboom,Ronald Koster,Alexander Cecilia Leona Jansen,Der Wel Willem Van. Владелец: Philips Norden Ab. Дата публикации: 1997-01-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240274649A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Yuan-Ching Peng,Ting-Yeh Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US09620616B2. Автор: Atsushi Yamada,Kenji Nukui. Владелец: Transphorm Japan Inc. Дата публикации: 2017-04-11.

Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench

Номер патента: US09608092B2. Автор: Wolfgang Werner,Roland Rupp,Hans-Joachim Schulze,Frank Pfirsch,Jens Konrath. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-03-28.

Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component

Номер патента: US09559093B2. Автор: Naveen Tipirneni,Sameer Pendharkar. Владелец: Texas Instruments Inc. Дата публикации: 2017-01-31.

Method of manufacturing a semiconductor device including a silicon pillar

Номер патента: US8158502B2. Автор: Kazuhiro Nojima. Владелец: Elpida Memory Inc. Дата публикации: 2012-04-17.

Method of Manufacturing a Semiconductor Device having a Buried Field Plate

Номер патента: US20150214311A1. Автор: Oliver Haeberlen,Gilberto Curatola. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-07-30.

Method of manufacturing a semiconductor device for reducing resistance of a CoSi2 layer

Номер патента: US20040209450A1. Автор: Cheng-Shun Chen,Wan-Yi Liu. Владелец: Macronix International Co Ltd. Дата публикации: 2004-10-21.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240243177A1. Автор: Boram Kim,Junhyuk Park,Sunkyu Hwang,Jongseob Kim,Joonyong Kim,Jaejoon Oh,Injun Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20080179693A1. Автор: Hyun-Woo CHUNG,Yong-Chul Oh,Jae-Man Yoon,Hui-jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-31.

Method of manufacturing a semiconductor device having a trench capacitor and a logic device

Номер патента: US20240322001A1. Автор: Jong Hyuk OH. Владелец: Sk Keyfoundry Inc. Дата публикации: 2024-09-26.

Method of forming trench semiconductor device having multiple trench depths

Номер патента: US09859449B2. Автор: Mohammed Tanvir Quddus,Michael Thomason,Mihir Mudholkar. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-01-02.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US09799762B2. Автор: Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-10-24.

Semiconductor device, integrated circuit and method of manufacturing a semiconductor device

Номер патента: US09748378B2. Автор: Till Schloesser,Andreas Meiser,Karoline Koepp. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-29.

Method of making a semiconductor device using a dummy gate

Номер патента: US20160104772A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2016-04-14.

Method of making a semiconductor device using a dummy gate

Номер патента: US20180261674A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2018-09-13.

Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Номер патента: US9799729B2. Автор: Franz Hirler,Ralf Siemieniec,Martin Henning Vielemeyer,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-24.

Method of making a semiconductor device using a dummy gate

Номер патента: US20170040427A1. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-02-09.

Method of producing a semiconductor device having a ferroelectric gate stack

Номер патента: US12107128B2. Автор: Hans-Joachim Schulze,Thomas Aichinger,Saurabh Roy. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-10-01.

Methods of fabricating a semiconductor device having low contact resistance

Номер патента: US20120208335A1. Автор: Ho Jin Cho,Yong Soo Joung,Kyong Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-08-16.

Method of making a semiconductor device using a dummy gate

Номер патента: US09991351B2. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2018-06-05.

Method of making a semiconductor device using a dummy gate

Номер патента: US09905662B2. Автор: Nicolas Loubet,Prasanna Khare. Владелец: STMicroelectronics lnc USA. Дата публикации: 2018-02-27.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230378299A1. Автор: Pei-Yu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Method of making a semiconductor device

Номер патента: US20020064950A1. Автор: Toshio Nagata. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-05-30.

Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device

Номер патента: US20230367220A1. Автор: Yung-Yao Lee,Kuo-Hung Chao,Hsieh-Yu WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device and method of forming the semiconductor device

Номер патента: US09917196B1. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2018-03-13.

Method of forming a semiconductor device and structure therefor

Номер патента: US09755032B1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-09-05.

Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device

Номер патента: US20190249330A1. Автор: Hans-Joachim Schulze,Johannes Freund,Helmut Oefner,Thomas Wuebben. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-08-15.

Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof

Номер патента: WO2006104562A2. Автор: Leo Mathew,Venkat R. Kolagunta,David C. Sing. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2006-10-05.

Oxide semiconductor devices, methods of forming oxide semiconductor devices and organic light emitting display devices including oxide semiconductor devices

Номер патента: US09614020B2. Автор: Tae-Young Kim,Hye-Hyang Park,Shin-Hyuk Yang. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-04-04.

Manufacturing method of high voltage semiconductor device

Номер патента: US20240154027A1. Автор: Kai-Kuen Chang,Ping-Hung Chiang,Hsin-Han WU. Владелец: United Microelectronics Corp. Дата публикации: 2024-05-09.

Method of fabricating a semiconductor device

Номер патента: US20110104865A1. Автор: Hiroyuki Uchiyama. Владелец: Elpida Memory Inc. Дата публикации: 2011-05-05.

Method of selectively transferring semiconductor device

Номер патента: US20240186446A1. Автор: Shih-I Chen,Hao-Min Ku,Fu-Chun Tsai,Hsin-Chih CHIU,You-Hsien Chang. Владелец: Epistar Corp. Дата публикации: 2024-06-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09614090B2. Автор: Ju-youn Kim,Sang-jung KANG,Ji-Hwan An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-04.

Plasma system, chuck and method of making a semiconductor device

Номер патента: US09530618B2. Автор: Manfred Engelhardt. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-12-27.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Номер патента: WO2007057803A1. Автор: Johannes J. T. M. Donkers,Joost Melai,Philippe Meunier-Beillard,Erwin Hijzen. Владелец: NXP B.V.. Дата публикации: 2007-05-24.

A semiconductor device and method of fabricating a semiconductor device

Номер патента: EP1808885A1. Автор: Dale C. Jacobson,Wade A. Krull. Владелец: Semequip Inc. Дата публикации: 2007-07-18.

Method of selectively transferring semiconductor device

Номер патента: US11901478B2. Автор: Shih-I Chen,Hao-Min Ku,Fu-Chun Tsai,Hsin-Chih CHIU,You-Hsien Chang. Владелец: Epistar Corp. Дата публикации: 2024-02-13.

Method of forming a semiconductor device

Номер патента: US20230420544A1. Автор: Hans Mertens,Sujith Subramanian. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2023-12-28.

Semiconductor device and method of fabricating the semiconductor device

Номер патента: US20240014218A1. Автор: Takashi Shiraishi,Kenichi Okazaki,Yasutaka Nakazawa,Kiyofumi Ogino,Yasuharu Hosaka,Rai Sato. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2024-01-11.

Semiconductor device and method of forming a semiconductor device

Номер патента: EP2067164A1. Автор: Philippe Lance,Yann Weber,Evgueniy Stefanov,Jean-Michel Reynes. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2009-06-10.

Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate

Номер патента: US6362027B1. Автор: Shunpei Yamazaki,Hiroki Adachi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-03-26.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20170077280A1. Автор: Chisato Furukawa. Владелец: Toshiba Corp. Дата публикации: 2017-03-16.

Semiconductor device including an n-type carrier stored layer, power conversion device, and method of manufacturing the semiconductor device

Номер патента: US10916631B2. Автор: Kenji Suzuki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-02-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230411478A1. Автор: MING-CHING Chang,Chao-Cheng Chen,Shih-Yao Lin,Chih-Han Lin,Chen-Ping CHEN,Kuei-Yu Kao. Владелец: Mcdermott W&e Llp LLP. Дата публикации: 2023-12-21.

Method of forming a semiconductor device and structure therefor

Номер патента: US20200266191A1. Автор: Mark Griswold,Amit Paul,Arash Elhami Khorasani. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-08-20.

Semiconductor device and method of making a semiconductor device

Номер патента: US20170194473A1. Автор: Johannes Josephus Theodorus Marinus Donkers,Jan Sonsky,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON. Владелец: Nexperia BV. Дата публикации: 2017-07-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230143543A1. Автор: Shigenobu Maeda,Choongsun Kim,Myoungkyu Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-11.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11843037B2. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-12.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: EP4060746A1. Автор: Yunseong LEE,Jinseong Heo,Sanghyun JO,Dukhyun CHOE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-09-21.

Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses

Номер патента: EP1459377A2. Автор: Hendrik H. Van Der Meer,Klaas G. Druijf. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2004-09-22.

Method of manufacturing a semiconductor device and semiconductor device manufactured thereof

Номер патента: EP2053636A3. Автор: Tetsuya Hayashi,Shigeharu Yamagami,Masakatsu Hoshi,Hidaki Tanaka. Владелец: Nissan Motor Co Ltd. Дата публикации: 2012-06-13.

Optical semiconductor device and method of assembling optical semiconductor device

Номер патента: US20210098523A1. Автор: Kyohei Maekawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2021-04-01.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190131448A1. Автор: Yoshinori Yoshida,Tsuyoshi Kachi. Владелец: Renesas Electronics Corp. Дата публикации: 2019-05-02.

Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Номер патента: US3811183A. Автор: W Celling. Владелец: US Philips Corp. Дата публикации: 1974-05-21.

Method of manufacturing a semiconductor device

Номер патента: US5766996A. Автор: Toshiyuki Hayakawa,Seiichi Aritome. Владелец: Toshiba Corp. Дата публикации: 1998-06-16.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20090146194A1. Автор: Mihai Adrian Ionescu,Didier Bouvet,Kirsten Moselund. Владелец: Ecole Polytechnique Federale de Lausanne EPFL. Дата публикации: 2009-06-11.

Method of fabricating a semiconductor device using masked deposition

Номер патента: WO2024039396A1. Автор: Pasi KOSTAMO,Flavio Griggio,David Johannes VAN WOERKOM,Naganivetha Thiyagarajah,Maren Elisabeth KLOSTER,Shivendra UPADHYAY. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2024-02-22.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230307450A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-28.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20180182876A1. Автор: Tadashi Inoue,Yukihiro Shibata. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2018-06-28.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11848242B2. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Semiconductor device and method of forming a semiconductor device

Номер патента: EP4345908A1. Автор: ANKIT Kumar,Hungjin Kim. Владелец: Nexperia BV. Дата публикации: 2024-04-03.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230343857A1. Автор: Hui-Chi CHEN,Chia-Wei Chen,Kuo-Feng Yu,Jian-Hao Chen,Shih-Hang Chiu,An-Hung Tai,Yu-Hong LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

Номер патента: EP1593155A1. Автор: Robert Lander,Dirk M. Knotter. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2005-11-09.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4250347A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-27.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20240071834A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US12002716B2. Автор: Chen-Ping CHEN,Shu-Wen Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20160240641A1. Автор: Yusuke Yamashita,Satoru Machida,Jun OKAWARA. Владелец: Toyota Motor Corp. Дата публикации: 2016-08-18.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20120025286A1. Автор: Kazuhiro Nojima. Владелец: Elpida Memory Inc. Дата публикации: 2012-02-02.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20220173243A1. Автор: Kilian ONG,Benjamin HUNG. Владелец: Nexperia BV. Дата публикации: 2022-06-02.

Vertical semiconductor device and method of manufacturing vertical semiconductor device

Номер патента: US20190267486A1. Автор: Katsunori Ueno. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-08-29.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20210118745A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-22.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20220216112A1. Автор: Chih-Liang Chen,I-Sheng Chen,Tzu-Chiang CHEN,Lei-Chun Chou,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-07.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20240105785A1. Автор: ANKIT Kumar,Hungjin Kim. Владелец: Nexperia BV. Дата публикации: 2024-03-28.

Method of manufacturing a semiconductor device with BICMOS circuit

Номер патента: US5824560A. Автор: Armand Pruijmboom,Willem Van Der Wel,Alexander C. L. Jansen,Ronald Koster. Владелец: US Philips Corp. Дата публикации: 1998-10-20.

Method of making a semiconductor device

Номер патента: US6096606A. Автор: Steven L. Merchant. Владелец: Motorola Inc. Дата публикации: 2000-08-01.

Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body

Номер патента: US4725564A. Автор: Cornelis J. A. M. van Dalen. Владелец: US Philips Corp. Дата публикации: 1988-02-16.

Method of manufacturing a semiconductor device by implanting ions through bevelled oxide layer in single masking step

Номер патента: US4104085A. Автор: Paul Zandveld. Владелец: US Philips Corp. Дата публикации: 1978-08-01.

Method of manufacturing a semiconductor device having a buried region with higher impurity concentration

Номер патента: US6146957A. Автор: Youichi Yamasaki. Владелец: Sony Corp. Дата публикации: 2000-11-14.

Semiconductor device, integrated circuit and method of forming a semiconductor device

Номер патента: WO2014086479A1. Автор: Rolf Weis,Franz Hirler,Andreas Meiser,Markus Zundel,Martin Vielemeyer,Peter Irsigler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2014-06-12.

Method of manufacturing a semiconductor device with a BiCMOS circuit

Номер патента: US5970332A. Автор: Armand Pruijmboom,Willem Van Der Wel,Alexander C. L. Jansen,Ronald Koster. Владелец: US Philips Corp. Дата публикации: 1999-10-19.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4310918A1. Автор: Oliver Haeberlen,Gerhard Prechtl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-24.

Method of forming power semiconductor device

Номер патента: US20230187537A1. Автор: Sang-Yong Lee,Sang-Su Woo. Владелец: PanJit International Inc. Дата публикации: 2023-06-15.

Semiconductor device and method of forming the semiconductor device

Номер патента: US20190259832A1. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2019-08-22.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20240030217A1. Автор: Gerhard Prechtl,Oliver Häberlen. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2024-01-25.

Method of making a semiconductor device

Номер патента: US20200152676A1. Автор: Chi-Feng Huang,Fang-Ting KUO,Victor Chiang Liang,Fu-Huan TSAI,Meng-Chang HO,Yu-Lin Wei. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-14.

Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

Номер патента: US11682703B2. Автор: Ralf Siemieniec,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-06-20.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11869936B2. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2024-01-09.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20150270276A1. Автор: Bernd Landgraf. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-09-24.

Method of forming a semiconductor device

Номер патента: US20200395468A1. Автор: Peter A. Burke,Dean E. Probst,Prasad Venkatraman,Peter McGrath,Masaichi Eda,Jeffery A. NEULS. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-12-17.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US12041780B2. Автор: Jeong Sang KANG. Владелец: SK hynix Inc. Дата публикации: 2024-07-16.

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

Номер патента: US11728297B2. Автор: ATSUSHI Fujisaki,Ho-Jin Lee,Kwang-jin Moon,Ju-Il Choi,Dong-Chan Lim,Ju-Bin Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-15.

Semiconductor device, an electronic system including the same, and a method of manufacturing the semiconductor device

Номер патента: US11744079B2. Автор: Chang-sun Hwang,Chungki MIN,Donghoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-29.

Semiconductor device and method of forming the semiconductor device

Номер патента: US09947664B1. Автор: Terence B. Hook,Brent Alan Anderson,Shawn P. Fetterolf. Владелец: International Business Machines Corp. Дата публикации: 2018-04-17.

Manufacturing method of three-dimensional semiconductor device

Номер патента: US11705189B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-07-18.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US09698107B2. Автор: Alfred Goerlach,Dietrich Bonart. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-07-04.

Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices

Номер патента: US09768193B2. Автор: Youngwoo Park,Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240274593A1. Автор: Seokho KIM,Sumin Park,Joohee Jang,Seongmin Son,Kyuha Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

Method of manufacturing a semiconductor device including PG-aligned cells

Номер патента: US12112117B2. Автор: Hiranmay BISWAS,Kuo-Nan Yang,Chung-Hsing Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Method of fabricating a semiconductor device

Номер патента: US20010016371A1. Автор: Atsushi Nakamura,Kunihiro Tsubosaki,Masachika Masuda,Akihiko Iwaya,Chikako Imura,Toshihiro Shiotsuki. Владелец: Individual. Дата публикации: 2001-08-23.

Method of manufacturing a semiconductor device

Номер патента: US12119337B2. Автор: Junichi Shibata. Владелец: Kioxia Corp. Дата публикации: 2024-10-15.

Method of connecting multilevel semiconductor devices

Номер патента: RU2664894C1. Автор: Цзюньфэн ЧЖАО. Владелец: Интел Корпорейшн. Дата публикации: 2018-08-23.

Method of making a semiconductor device with changeable interconnection

Номер патента: US6069076A. Автор: Yasuji Takahashi. Владелец: Yamaha Corp. Дата публикации: 2000-05-30.

Three-dimensional (3d) semiconductor devices and methods of fabricating 3d semiconductor devices

Номер патента: US20160240555A1. Автор: Youngwoo Park,Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-18.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: WO2008007259A3. Автор: Hoang Viet Nguyen. Владелец: Hoang Viet Nguyen. Дата публикации: 2008-06-12.

Method of making a semiconductor device, and semiconductor device made thereby

Номер патента: EP1723673A2. Автор: Peter Zurcher,Melvy F. Miller,Thomas P. Remmel,Sriram; Kalpat. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2006-11-22.

Method of making a semiconductor device, and semiconductor device made thereby

Номер патента: WO2005091795A2. Автор: Peter Zurcher,Melvy F. Miller,Sriram Kalpat,Thomas P. Remmel. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2005-10-06.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20240347411A1. Автор: Keun Soo Kim,Yu Jin Jeon,Young Ik Kwon,Mi Kyoung Choi. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-10-17.

Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby

Номер патента: US20020016059A1. Автор: Masakazu Okada,Hiroyuki Chibahara,Keiichi Higashitani. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-07.

Method of manufacturing a semiconductor device

Номер патента: US20080038897A1. Автор: Hiroshi Yoshino,Kazushi Suzuki,Yoshihiro Takaishi. Владелец: Elpida Memory Inc. Дата публикации: 2008-02-14.

Method of manufacturing a semiconductor device having an alignment mark

Номер патента: US20050170615A1. Автор: Yasuhiro Doumae. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-08-04.

Methods of fabricating a semiconductor device

Номер патента: US10312086B2. Автор: Kuo-Yao Chou. Владелец: Micron Technology Inc. Дата публикации: 2019-06-04.

Semiconductor device and method of manufacturing a semiconductor device

Номер патента: US20200402885A1. Автор: Keun Soo Kim,Yu Jin Jeon,Young Ik Kwon,Mi Kyoung Choi. Владелец: Amkor Technology Korea Inc. Дата публикации: 2020-12-24.

Method of manufacturing a semiconductor device having a bond wire or clip bonded to a bonding pad

Номер патента: US11837528B2. Автор: Anton Mauder,Hans-Joachim Schulze. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-12-05.

Method of fabricating a semiconductor device

Номер патента: US20230276718A1. Автор: Peter KROGSTRUP JEPPESEN,Amrita Singh,Elvedin MEMISEVIC. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2023-08-31.

Thin semiconductor device and method of manufacturing thin semiconductor device

Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device

Номер патента: US09887303B2. Автор: Jaeho Lee,Seongjun Park,Sangyeob LEE,Eunkyu Lee,Jinseong Heo,Kiyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-06.

A method of assembling a semiconductor device package

Номер патента: EP1188182A1. Автор: Charles Lee,Helmut Strack. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2002-03-20.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20140160390A1. Автор: Yasuyuki Arai,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-06-12.

Hybrid bonding structures, semiconductor devices having the same, and methods of manufacturing the semiconductor devices

Номер патента: US20220093549A1. Автор: Junghoon Lee,Kunmo Chu,Byonggwon SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-24.

Method of making cBN semiconductor device having an ohmic electrode

Номер патента: US5444017A. Автор: Yoshiyuki Suda,Osamu Mishima,Satoshi Agawa,Koh Era. Владелец: National Institute for Research in Inorganic Material. Дата публикации: 1995-08-22.

Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

Номер патента: US20240266379A1. Автор: Kosuke Nakanishi,Hideaki Togashi. Владелец: Sony Group Corp. Дата публикации: 2024-08-08.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09887154B2. Автор: Takuya Takahashi,Yoshitaka Otsubo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-02-06.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09640630B2. Автор: Yasuyuki Arai,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-05-02.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US09437724B2. Автор: Hiroaki Ueno. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2016-09-06.

Method of manufacturing a semiconductor device and liquid crystal display

Номер патента: US20030155571A1. Автор: Ichiro Murai,Masami Hayashi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-08-21.

Method of making a semiconductor device

Номер патента: US11990474B2. Автор: Chi-Feng Huang,Shu Fang Fu,Chia-Chung Chen,Victor Chiang Liang,Fu-Huan TSAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Semiconductor device, method of fabricating the semiconductor device, and method of forming epitaxial layer

Номер патента: US09653472B2. Автор: Joon Suk Lee,Woo Sung Lee,Woong Lee,Hun Hyeong LIM,Kyong Won AN,Chae Ho KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-16.

Semiconductor devices and methods of fabricating a semiconductor device

Номер патента: US12068359B2. Автор: Chor Shu CHENG,Lulu Peng,Lawrence Selvaraj SUSAI,Zishan Ali Syed Mohammed,Yong Chau Ng,Nuraziz Yosokumoro. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-08-20.

Method of producing a semiconductor device

Номер патента: US3762967A. Автор: H Holzer,W Scherber. Владелец: Licentia Patent Verwaltungs GmbH. Дата публикации: 1973-10-02.

Method of forming a semiconductor device and structure therefor

Номер патента: US09960234B2. Автор: Kirk HUANG,Chun-Li Liu,Ali Salih. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-05-01.

Semiconductor device, a method of manufacturing a semiconductor device and a testing method of the same

Номер патента: US7816154B2. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2010-10-19.

Semiconductor Device, A Method of Manufacturing A Semiconductor Device and A Testing Method of the Same

Номер патента: US20110018573A1. Автор: Yoshiaki Nakajima,Tasuke Tanaka,Akira Seito,Kanya HAMADA. Владелец: Renesas Electronics Corp. Дата публикации: 2011-01-27.

A locking clip, a semiconductor device, and a method of manufacturing a semiconductor device

Номер патента: EP4365941A1. Автор: Ricardo Yandoc,Dolores Milo. Владелец: Nexperia BV. Дата публикации: 2024-05-08.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20090057831A1. Автор: Florin Udrea,Cerdin Lee. Владелец: Cambridge Semiconductor Ltd. Дата публикации: 2009-03-05.

Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

Номер патента: EP4302332A1. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Guo Xiang Song. Владелец: Silicon Storage Technology Inc. Дата публикации: 2024-01-10.

Semiconductor Device and Method of Manufacturing the Semiconductor Device

Номер патента: US20170301769A1. Автор: Yasuyuki Arai,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-19.

Locking Clip, a Semiconductor Device, and a Method of Manufacturing a Semiconductor Device

Номер патента: US20240153838A1. Автор: Ricardo Yandoc,Dolores Milo. Владелец: Nexperia BV. Дата публикации: 2024-05-09.

Method of making a semiconductor device

Номер патента: GB1353185A. Автор: . Владелец: Licentia Patent Verwaltungs GmbH. Дата публикации: 1974-05-15.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: US20230307454A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-28.

Method of producing a semiconductor device

Номер патента: US20010006830A1. Автор: Volker Strutz,Rüdiger Uhlmann,Stephan Wege,Achim Neu. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2001-07-05.

Semiconductor device and a method of operating the semiconductor device

Номер патента: US20200395412A1. Автор: Satoru Yamada,Taehun Kim,Kyunghwan Lee,Yongseok Kim,Seokhan Park,Jaeho Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20170062361A1. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-03-02.

Semiconductor device and method of fabricating a semiconductor device

Номер патента: EP4250359A1. Автор: Robert Haase,Timothy Henson,Harsh Naik,Honghai He,Ashita Mirchandani. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2023-09-27.

Method of producing a semiconductor device comprising a cleaning process for removing silicon-containing material

Номер патента: US6436731B2. Автор: Volker Strutz,Rüdiger Uhlmann,Stephan Wege,Achim Neu. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2002-08-20.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US9793228B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-17.

Semiconductor device and method of operating the semiconductor device

Номер патента: US20130069714A1. Автор: Jai-Kwang Shin,U-In Chung,Ho-Jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-03-21.

Method of fabricating a semiconductor device using element isolation by field shield

Номер патента: US5672526A. Автор: Koichiro Kawamura. Владелец: Nippon Steel Corp. Дата публикации: 1997-09-30.

Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame

Номер патента: US6165818A. Автор: Seiji Ichikawa,Takeshi Umemoto,Kazunari Sato,Kunihiko Tsubota,Tatsuya Miya,Keita Okahira,Toshiaki Nishibe,Toru Kitakoga,Yoshikazu Nishimura,Masato Suga,Kazuhiro Tahara. Владелец: NEC Corp. Дата публикации: 2000-12-26.

Method of manufacturing a semiconductor device and device manufactured by the method

Номер патента: US3811975A. Автор: Lierop J Van. Владелец: US Philips Corp. Дата публикации: 1974-05-21.

Method of Forming a Semiconductor Device

Номер патента: US20130168662A1. Автор: Thomas Kugler,Christopher Newsome,Mohd K. Othman. Владелец: Cambridge Display Technology Ltd. Дата публикации: 2013-07-04.

Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core

Номер патента: US6417039B2. Автор: Marian N. Webster. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-07-09.

Manufacturing method and program of semiconductor device

Номер патента: US20180217203A1. Автор: Tomoaki Tamura,Yoshiyuki Nakamura,Kouichi KUMAKI. Владелец: Renesas Electronics Corp. Дата публикации: 2018-08-02.

Method of manufacturing a semiconductor device including applying ultrasonic waves to a ball portion of the semiconductor device

Номер патента: US09508678B2. Автор: Naoki Kawanabe. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-29.

Method of manufacturing a semiconductor device and a device obtained by means of said method

Номер патента: US20020123223A1. Автор: Johannes Van Rijckevorsel,Eugene Vriezen. Владелец: Individual. Дата публикации: 2002-09-05.

Method of manufacturing a semiconductor device

Номер патента: US20170084665A1. Автор: Byung-Kyu Park,Shawn Michael O'rourke,Frank Caris,Brian Rees. Владелец: dpiX LLC. Дата публикации: 2017-03-23.

Semiconductor devices including conductive lines and methods of forming the semiconductor devices

Номер патента: US09911693B2. Автор: William R. Brown,David A. Kewley,Tim H. Bossart,Nikolay A. Mirin,Jenna L. Russon,Brian R. Watson. Владелец: Micron Technology Inc. Дата публикации: 2018-03-06.

Semiconductor device, semiconductor system, and method of controlling the semiconductor device

Номер патента: US20190140131A1. Автор: Tsuyoshi Waki. Владелец: Renesas Electronics Corp. Дата публикации: 2019-05-09.

Method of bonding a semiconductor device to an electrically conductive plate

Номер патента: EP1366514A1. Автор: Johannes W. Van Rijckevorsel,Eugene A. Vriezen. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-12-03.

Semiconductor devices including stacked dies and methods of testing the semiconductor devices

Номер патента: US20200049767A1. Автор: Dong-hun Kang,Myeong-jun Song,Hyoung-Min Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-02-13.

Method of making a semiconductor device

Номер патента: US6022773A. Автор: Masato Sakao. Владелец: NEC Corp. Дата публикации: 2000-02-08.

Method of manufacturing optical semiconductor device and optical semiconductor device

Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

Luminescent device and manufacturing method for luminescent device and semiconductor device

Номер патента: US20150295129A1. Автор: Yoshitaka Kadowaki,Tatsunori Toyota. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2015-10-15.

Method of manufacturing a semiconductor device

Номер патента: US6596582B2. Автор: Yoshinori Tanaka,Yoshitaka Fujiishi,Eiji Hasunuma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-07-22.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20070290240A1. Автор: Noriaki Suzuki,Masanori Nagase. Владелец: Fujifilm Corp. Дата публикации: 2007-12-20.

Primer composition, method of forming a primer layer on a semiconductor device, and method of encapsulating a semiconductor device

Номер патента: US09540539B2. Автор: Joachim Mahler,Swee Kah Lee,Jagen KRISHNAN,Soon Lock Goh,Yik Yee TAN,Chew Theng TAI,Poh Cheng LIM,Peh Hean TEH. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-01-10.

Optical semiconductor device and method of fabricating optical semiconductor device

Номер патента: US20060054916A1. Автор: Yoshihiko Hanamaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2006-03-16.

Method of forming a semiconductor device including strain reduced structure

Номер патента: US09997480B2. Автор: Hsien-Wei Chen,Yu-feng Chen,Tsung-Ding Wang,Ying-Ju Chen,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-12.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

Номер патента: US09947711B2. Автор: Rainer Minixhofer,Martin Schrems,Sara Carniello. Владелец: ams AG. Дата публикации: 2018-04-17.

Semiconductor structure, preparation method of same, and semiconductor device

Номер патента: US20220238639A1. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

Method of manufacturing organic semiconductor device

Номер патента: US20200176697A1. Автор: Lixuan Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-06-04.

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using test socket terminals

Номер патента: US9905482B2. Автор: Toshitsugu Ishii,Hidekazu Iwasaki,Jun MATSUHASHI,Naohiro Makihira. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Method of manufacturing a semiconductor device

Номер патента: US20240282582A1. Автор: Ching-Sen Kuo,Feng-Jia Shiu,Chun-Wei Chang,Wei-Chao Chiu,Yong-Jin LIOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Method of producing a semiconductor device

Номер патента: US3891481A. Автор: Reinhold Kaiser. Владелец: Telefunken Patentverwertungs GmbH. Дата публикации: 1975-06-24.

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using test socket terminals

Номер патента: US09905482B2. Автор: Toshitsugu Ishii,Hidekazu Iwasaki,Jun MATSUHASHI,Naohiro Makihira. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using socket terminals

Номер патента: US09761501B2. Автор: Toshitsugu Ishii,Hidekazu Iwasaki,Jun MATSUHASHI,Naohiro Makihira. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-12.

Method of manufacturing a semiconductor device using purified block copolymers and semiconductor devices

Номер патента: US09627205B2. Автор: Jae-Hyun Kim,Jung-Sik Choi,Su-Jin KWON,Jun Won HAN,Hye-Ryun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Methods of inspecting a semiconductor device and semiconductor inspection systems

Номер патента: US09476840B2. Автор: Seunghune YANG,Sibo CAI,Kiho Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-25.

Photoresist composition and method of manufacturing a semiconductor device

Номер патента: US20230384673A1. Автор: Ching-Yu Chang,Yen-Hao Chen,Wei-Han Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer

Номер патента: US20140065784A1. Автор: Jaehong Park,Dongchan Kim,Je-woo Han,Gyungjin Min,Junho Yoon,Yongmoon Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-03-06.

Memory cells, methods of fabrication, and semiconductor devices

Номер патента: US09608197B2. Автор: Witold Kula,Manzar Siddik,Andy Lyle. Владелец: Micron Technology Inc. Дата публикации: 2017-03-28.

Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier

Номер патента: US20200251584A1. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2020-08-06.

Method of fabricating a semiconductor device

Номер патента: US20070254389A1. Автор: Chang-ki Hong,Jeong-Nam Han,Dae-hyuk Kang,Kun-tack Lee,Sung-il Cho,Jung-min Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-11-01.

Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier

Номер патента: US11094813B2. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2021-08-17.

Method of manufacturing a semiconductor device for attaching to a flexible display

Номер патента: US20210240227A1. Автор: Cheng-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-05.

Method of manufacturing a semiconductor device for attaching to a flexible display

Номер патента: US11619974B2. Автор: Cheng-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-04.

Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device

Номер патента: US20110053096A1. Автор: Sang-Yong Yu,Gi-sung Yoon,Sung-Hyuck Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-03-03.

Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film

Номер патента: US20130011988A1. Автор: Nobuyuki Sako. Владелец: Elpida Memory Inc. Дата публикации: 2013-01-10.

Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film

Номер патента: US8883601B2. Автор: Nobuyuki Sako. Владелец: PS4 Luxco SARL. Дата публикации: 2014-11-11.

Method of manufacturing a semiconductor device

Номер патента: US20050032264A1. Автор: James O'gorman. Владелец: Eblana Photonics Ltd. Дата публикации: 2005-02-10.

Method of making a semiconductor device using a nanochannel glass matrix

Номер патента: US5306661A. Автор: Brian L. Justus,Ronald J. Tonucci. Владелец: US Department of Navy. Дата публикации: 1994-04-26.

Semiconductor device, semiconductor laser, and method of producing a semiconductor device

Номер патента: US11876349B2. Автор: Masahiro Murayama. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-01-16.

Method of manufacturing a semiconductor device

Номер патента: US7071041B2. Автор: Hisashi Ohtani,Shunpei Yamazaki,Hideto Ohnuma. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2006-07-04.

Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body

Номер патента: CA1271270A. Автор: Johannes S. Peters. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1990-07-03.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US20180336956A1. Автор: Hiroshi Tachibana,Yasutaka Horikoshi,Kotaro SAKUMURA,Keita KASHIMA. Владелец: Renesas Electronics Corp. Дата публикации: 2018-11-22.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US10255984B2. Автор: Hiroshi Tachibana,Yasutaka Horikoshi,Kotaro SAKUMURA,Keita KASHIMA. Владелец: Renesas Electronics Corp. Дата публикации: 2019-04-09.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20230223396A1. Автор: Wolfgang Schnitt,Hans-Martin Ritter,Steffen Holland,Joachim Utzig. Владелец: Nexperia BV. Дата публикации: 2023-07-13.

Method of producing a semiconductor device having a light transparent window

Номер патента: US4812420A. Автор: Takashi Takahama,Kunito Sakai,Sadamu Matsuda. Владелец: Mitsubishi Electric Corp. Дата публикации: 1989-03-14.

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

Номер патента: USRE49780E1. Автор: Jung-Ho Do,Sanghoon Baek,Taejoong Song,Jinyoung Lim,Sungwe Cho,Giyoung Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Method of manufacturing a semiconductor device

Номер патента: US20090142884A1. Автор: Kaoru Katoh. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2009-06-04.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11949209B2. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2024-04-02.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230198223A1. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2023-06-22.

Methods of forming a pattern and methods of fabricating a semiconductor device

Номер патента: US20210026245A1. Автор: Yongseok Jung,Byounghoon Lee,Jumi Bang,Byoungsup Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Primer composition, method of forming a primer layer on a semiconductor device, and method of encapsulating a semiconductor device

Номер патента: US20150344730A1. Автор: Joachim Mahler,Swee Kah Lee,Jagen KRISHNAN,Soon Lock Goh,Yik Yee TAN,Chew Theng TAI,Poh Cheng LIM,Peh Hean TEH. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-12-03.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20190386456A1. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2019-12-19.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US11038317B2. Автор: Eiichiro OKAHISA,Shohei Itonaga. Владелец: Nichia Corp. Дата публикации: 2021-06-15.

Method of manufacturing a semiconductor device

Номер патента: US20230369048A1. Автор: Ching-Yu Chang,Chi-Ming Yang,Yen-Yu Chen,Tze-Liang Lee,Yi-Chen Kuo,Chih-Cheng Liu,Ming-Hui Weng,Jr-Hung Li,Yahru CHENG,Jia-Lin WEI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

Номер патента: WO2015124465A1. Автор: Rainer Minixhofer,Martin Schrems,Sara Carniello. Владелец: ams AG. Дата публикации: 2015-08-27.

Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance

Номер патента: US6512261B2. Автор: Akinori Kinugasa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-01-28.

Semiconductor structure, preparation method of same, and semiconductor device

Номер патента: US11894418B2. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-06.

Method of forming a semiconductor device including strain reduced structure

Номер патента: US20180047686A1. Автор: Hsien-Wei Chen,Yu-feng Chen,Tsung-Ding Wang,Ying-Ju Chen,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-15.

Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device

Номер патента: EP1003207A3. Автор: Koichiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2003-08-06.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US20240332890A1. Автор: Daisuke Inoue,Konosuke AOYAMA. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2024-10-03.

Manufacturing method and manufacturing apparatus for semiconductor device

Номер патента: US20120190135A1. Автор: Takayuki Ito,Koji Kugino. Владелец: Toshiba Corp. Дата публикации: 2012-07-26.

Method of controlling an adjustable nozzle and method of making a semiconductor device

Номер патента: US10910199B2. Автор: Ding-I Liu,Wen-Long Lee,Wei-Ching Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-02-02.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20070263691A1. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2007-11-15.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US7263115B2. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Edward Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2007-08-28.

Semiconductor device and a method of manufacturing a semiconductor device

Номер патента: US20040233952A1. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Hooper,Brendan Poole. Владелец: Individual. Дата публикации: 2004-11-25.

A Semiconductor Device and a Method of Manufacturing a Semiconductor Device

Номер патента: EP1465303A3. Автор: Rakesh Roshan,Jonathan Heffernan,Stewart Edward Hooper,Brendan Poole. Владелец: Sharp Corp. Дата публикации: 2005-07-27.

Method of making a semiconductor device

Номер патента: US5459082A. Автор: Jae S. Jeong. Владелец: Gold Star Co Ltd. Дата публикации: 1995-10-17.

Heating system and method of testing a semiconductor device using a heating system

Номер патента: US09609693B2. Автор: Carlos Pereira,Maxime Clairet. Владелец: NXP USA Inc. Дата публикации: 2017-03-28.

Semiconductor device and method of operating a semiconductor device

Номер патента: US09584104B2. Автор: Hubert Bode,Andreas Johann Roth,Mathieu Gauthier Lesbats. Владелец: NXP USA Inc. Дата публикации: 2017-02-28.

Semiconductor device with high- and low-density regions of transistor elements on single semiconductor substrate, and method of manufacturing such semiconductor device

Номер патента: US20010006834A1. Автор: Toshiyuki Hirota,Natsuki Sato. Владелец: NEC Corp. Дата публикации: 2001-07-05.

Semiconductor device, semiconductor system, and method of operating the semiconductor device

Номер патента: US20200388320A1. Автор: Soo Min Lee,Ki Hwan SEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-10.

Boot-up method of E-fuse, semiconductor device and semiconductor system including the same

Номер патента: US09430247B2. Автор: Yun-Seok Hong. Владелец: SK hynix Inc. Дата публикации: 2016-08-30.

Semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20240341104A1. Автор: Woo Tae Lee. Владелец: SK hynix Inc. Дата публикации: 2024-10-10.

Semiconductor device including level shifter, display device including the semiconductor device and method of operating the semiconductor device

Номер патента: US20110032242A1. Автор: Woo-nyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-02-10.

Semiconductor device including level shifter, display device including the semiconductor device and method of operating the semiconductor device

Номер патента: US8502813B2. Автор: Woo-nyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-08-06.

Method of forming a semiconductor device and structure therefor

Номер патента: US9473861B1. Автор: Dennis Wayne Mitchler,James Gregory Ryan. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-10-18.

Semiconductor device, electronic device, and method of testing the semiconductor device

Номер патента: US20120306540A1. Автор: Wataru Tanaka,Satoru Ikeda,Yayoi Nagao,Danichi Komatsu. Владелец: Renesas Electronics Corp. Дата публикации: 2012-12-06.

Semiconductor device, electronic device, and method of testing the semiconductor device

Номер патента: US8575978B2. Автор: Wataru Tanaka,Satoru Ikeda,Yayoi Nagao,Danichi Komatsu. Владелец: Renesas Electronics Corp. Дата публикации: 2013-11-05.

Method of fabricating a semiconductor device

Номер патента: WO2024037710A1. Автор: Amrita Singh,Elvedin MEMISEVIC,Philippe CAROFF-GAONAC'H,Frederik BOEKHOUT,Gowri Santhosh Nag Rajkiran THOLAPI. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-02-22.

Method of manufacturing a semiconductor device having three-dimensional cell structure

Номер патента: US20230292638A1. Автор: Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2023-09-14.

Memory cells, methods of fabrication, and semiconductor devices

Номер патента: WO2015130657A1. Автор: Witold Kula,Manzar Siddik. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-09-03.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: EP3245018A1. Автор: Urban Harrysson. Владелец: Digital Metal AB. Дата публикации: 2017-11-22.

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

Номер патента: US09753218B2. Автор: Jochen Kraft,Joerg Siegert,Ewald STUECKLER. Владелец: ams AG. Дата публикации: 2017-09-05.

Method of manufacturing a semiconductor device

Номер патента: US6955870B2. Автор: Hideo Miura,Hideyuki Aoki,Masatoshi Kanamaru,Ryuji Kohno,Hiroya Shimizu. Владелец: HITACHI LTD. Дата публикации: 2005-10-18.

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

Номер патента: US20160334572A1. Автор: Jochen Kraft,Joerg Siegert,Ewald STUECKLER. Владелец: ams AG. Дата публикации: 2016-11-17.

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

Номер патента: WO2015082203A1. Автор: Jörg Siegert,Jochen Kraft,Ewald Stückler. Владелец: ams AG. Дата публикации: 2015-06-11.

Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another

Номер патента: US5792591A. Автор: Albert J.P. Theuwissen. Владелец: US Philips Corp. Дата публикации: 1998-08-11.

Apparatus for manufacturing a semiconductor device and method of manufacturing a semiconductor device

Номер патента: US09415501B2. Автор: Yu-Chih Liu,Chin-Liang Chen,Kuan-Lin Ho,Wei-Ting Lin,Shih-Yen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-16.

Molded part, molded part manufacturing method, method of molded part gluing with object and application of fabric or unidirectional fabric

Номер патента: RU2742777C1. Автор: Карстен ФОЛЬКМАНН. Владелец: Ако Зеверин Альманн Гмбх Унд Ко Коммандитгезельшафт. Дата публикации: 2021-02-10.

Semiconductor devices having mirrored terminal arrangements, devices including same, and methods of testing such semiconductor devices

Номер патента: US20020044476A1. Автор: Steven Hamren,James Nuxoll. Владелец: Individual. Дата публикации: 2002-04-18.

Semiconductor device(s) and method of refreshing the semiconductor device

Номер патента: US09711204B1. Автор: Youk Hee Kim. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Mask blank, transfer mask, method of manufacturing a mask blank, method of manufacturing a transfer mask and method of manufacturing a semiconductor device

Номер патента: US09625807B2. Автор: Hiroaki Shishido,Osamu Nozawa,Toshiharu Kikuchi,Atsushi Kominato. Владелец: Hoya Corp. Дата публикации: 2017-04-18.

Method of fabricating a semiconductor device

Номер патента: US20200143010A1. Автор: Kang-Min Jung,Sangtae Kim,Bong-Soo Kang,Sooyong Lee,Kyoil KOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-07.

Method of predicting hydrogen content in steel of steel strip, method of controlling hydrogen content in steel, manufacturing method, method of forming prediction model of hydrogen content in steel, and device that predicts hydrogen content in steel

Номер патента: US20230313355A1. Автор: Hideyuki Takahashi,Soshi Yoshimoto,Maiko HIYAMA. Владелец: JFE Steel Corp. Дата публикации: 2023-10-05.

Polymer particle manufacturing method, method of obtaining liquid mixture including polymer particles and organotellurium compound, tellurium recovery method, and dispersion of polymer particles

Номер патента: US20230295384A1. Автор: Masatoshi Tosaka,Shigeru Yamago. Владелец: KYOTO UNIVERSITY. Дата публикации: 2023-09-21.

Semiconductor device, semiconductor system including the semiconductor device, and method of operating the semiconductor device and system

Номер патента: US20190267058A1. Автор: Dong Kyun Kim,Min su Park. Владелец: SK hynix Inc. Дата публикации: 2019-08-29.

Method of fabricating integrated semiconductor device and structure thereof

Номер патента: US9302904B2. Автор: Shuo-Lun Tu,Ming-Tung Lee,Hsueh-I Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-04-05.

Method of fabricating integrated semiconductor device and structure thereof

Номер патента: US20150044808A1. Автор: Shuo-Lun Tu,Ming-Tung Lee,Hsueh-I Huang. Владелец: Macronix International Co Ltd. Дата публикации: 2015-02-12.

Titanium etchant composition and method of forming a semiconductor device using the same

Номер патента: US8801958B2. Автор: Dong-Min Kang,Baiksoon Choi,Seunghyun Ahn,KyooChul Cho,Jeong Kwon,Heon jin Park,JungIg Jeon. Владелец: Samyoung Pure Chemicals Co Ltd. Дата публикации: 2014-08-12.

Titanium etchant composition and method of forming a semiconductor device using the same

Номер патента: US20110240912A1. Автор: Dong-Min Kang,Baiksoon Choi,Seunghyun Ahn,KyooChul Cho,Jeong Kwon,Heon jin Park,JungIg Jeon. Владелец: Samyoung Pure Chemicals Co Ltd. Дата публикации: 2011-10-06.

Method of forming a semiconductor device

Номер патента: US09493347B2. Автор: Yi-Shao LIU,Allen Timothy Chang,Wen-Hsiang Lin,Chun-Ren Cheng,Yi-Hsien Chang,Ching-Ray Chen,Yeh-Tseng Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-15.

Pogo pin and probe card, and method of manufacturing a semiconductor device using the same

Номер патента: US09651577B2. Автор: Joon-Yeon Kim,Sung-ho Joo,Yu-Kyum KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-16.

Method of correcting a design layout of a semiconductor device, a computing device performing the same and a method of fabricating a semiconductor device using the same

Номер патента: US20230229073A1. Автор: Jongmin Lee,Cheolhwan Kim,Jichang SIM,Sangeun GO,Ohhun KWON,Hyuckjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-20.

Method of designing a semiconductor device

Номер патента: US20090007045A1. Автор: Noriaki Oda. Владелец: NEC Electronics Corp. Дата публикации: 2009-01-01.

Method of designing a semiconductor device

Номер патента: US8146044B2. Автор: Noriaki Oda. Владелец: Renesas Electronics Corp. Дата публикации: 2012-03-27.

Method of manufacturing a semiconductor device

Номер патента: CA1255192A. Автор: Charles T. Foxon. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1989-06-06.

A method of testing a semiconductor device as well as a corresponding testing device

Номер патента: EP4290251A1. Автор: Magnus RUMMEY. Владелец: Nexperia BV. Дата публикации: 2023-12-13.

Semiconductor device related to performance of a program operation and method of operating the semiconductor device

Номер патента: US20240161832A1. Автор: Hyung Jin Choi,Chan Hui Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Semiconductor device and method of testing the semiconductor device

Номер патента: US20240177791A1. Автор: Jun Hyuk Lee. Владелец: SK hynix Inc. Дата публикации: 2024-05-30.

Semiconductor device for performing a program operation and a method of operating the semiconductor device

Номер патента: US20240170079A1. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

Method of testing a semiconductor device as well as a corresponding testing device

Номер патента: US20230400503A1. Автор: Magnus Siegfried RUMMEY. Владелец: Nexperia BV. Дата публикации: 2023-12-14.

Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

Номер патента: CA1208806A. Автор: Peter J. Dobson,Charles T. Foxon,James H. Neave. Владелец: James H. Neave. Дата публикации: 1986-07-29.

Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

Номер патента: US4575462A. Автор: Peter J. Dobson,Charles T. Foxon,James H. Neave. Владелец: US Philips Corp. Дата публикации: 1986-03-11.

Semiconductor device and method of controlling the semiconductor device

Номер патента: US11907681B2. Автор: Taro Fujii,Takao Toi,Katsumi Togawa,Teruhito TANAKA. Владелец: Renesas Electronics Corp. Дата публикации: 2024-02-20.

Method of measuring a semiconductor device

Номер патента: US11830176B2. Автор: Kai Lee,Chih-Chien Huang,Hao-Hsiang Huang. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-28.

Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

Номер патента: US20210096475A1. Автор: Hsu-Ting Huang,Chin-Hsiang Lin,Ru-Gun Liu,Shinn-Sheng Yu,Kenji Yamazoe,Minfeng CHEN,Shuo-Yen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Semiconductor device having scan test circuit that switches clock signal between shift mode and capture mode, and method of testing the semiconductor device

Номер патента: US20020136064A1. Автор: Masayuki Yoshiyama. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2002-09-26.

Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

Номер патента: US20230333486A1. Автор: Hsu-Ting Huang,Chin-Hsiang Lin,Ru-Gun Liu,Shinn-Sheng Yu,Kenji Yamazoe,Minfeng CHEN,Shuo-Yen Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Method of extracting a semiconductor device compact model

Номер патента: US20060282802A1. Автор: Sitaramarao Yechuri. Владелец: Individual. Дата публикации: 2006-12-14.

Semiconductor device including a clock source for generating a clock signal and a clock control circuit for controlling the clock source in hardware, a semiconductor system including the semiconductor device, and a method of operating the semiconductor device

Номер патента: US10503674B2. Автор: Jae Gon Lee,AH Chan Kim,Ho Yeon Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-10.

Method of recording an exposure pattern in a recording layer of a holographic mask, method of forming an exposure pattern in a photosensitive material film, method of manufacturing a semiconductor device and method of manufacturing an electro-optic device

Номер патента: US20070229927A1. Автор: Chiharu Iriguchi. Владелец: Seiko Epson Corp. Дата публикации: 2007-10-04.

Method of manufacturing a semiconductor device and semiconductor device manufacturing tool

Номер патента: US20230418156A1. Автор: Hui-Chun Lee,Tung-Hung FENG,Peng-Ting LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-28.

Semiconductor device configured to store parity data and method of operating the semiconductor device

Номер патента: US20240021223A1. Автор: Byoung Sung You. Владелец: SK hynix Inc. Дата публикации: 2024-01-18.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.