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  • NANOSHEET TRANSISTOR HAVING A STRAINED CHANNEL WITH STRAIN-PRESERVING MULTI-SEGMENTED SOURCE/DRAIN REGIONS

NANOSHEET TRANSISTOR HAVING A STRAINED CHANNEL WITH STRAIN-PRESERVING MULTI-SEGMENTED SOURCE/DRAIN REGIONS

Номер патента: US20210234020A1
Опубликовано: 29-07-2021
Автор(ы): Bi Zhenxing, Conti Richard A., Loubet Nicolas, Mochizuki Shogo
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Gene-therapeutic dna-vector based on the gene-therapeutic dna-vector vtvaf17, carrying the target gene selected from a group of genes bdnf, vegfa, bfgf, ngf, gdnf, nt3, cntf, igf1, to increase expression level of said target genes, method for production and use thereof, a strain escherichia coli scs110-af/vtvaf17-bdnf, or escherichia coli scs110-af/vtvaf17-vegfa, or escherichia coli scs110-af/vtvaf17-bfgf, or escherichia coli scs110-af/vtvaf17-ngf, or escherichia coli scs110-af/vtvaf17-gdnf, or escherichia coli scs110-af/vtvaf17-nt3, or escherichia coli scs110-af/vtvaf17-cntf, or escherichia coli scs110-af/vtvaf17-igf1, carrying a gene-therapeutic dna vector, method for production thereof, a method for industrial production of a gene-therapeutic dna vector

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BIPOLAR TRANSISTOR HAVING SELF-ADJUSTED EMITTER CONTACT

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