CMOS DEVICES HAVING STRAIN SOURCE/DRAIN REGIONS AND LOW CONTACT RESISTANCE.

CMOS DEVICES HAVING STRAIN SOURCE/DRAIN REGIONS AND LOW CONTACT RESISTANCE

Номер патента: US20140001561A1
Опубликовано: 02-01-2014
Автор(ы): Alexander Reznicek, Ali Khakifirooz, Kangguo Cheng, Thomas N. Adam
Принадлежит: International Business Machines Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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