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METHODS OF FORMING A TRANSISTOR DEVICE WITH SOURCE/DRAIN REGIONS COMPRISING AN INTERFACE LAYER THAT COMPRISES A NON-SEMICONDUCTOR MATERIAL

Номер патента: US20210083111A1
Опубликовано: 18-03-2021
Автор(ы): Ellis-Monaghan John, Jain Vibhor, PEKARIK JOHN J., SHANK Steven M., Stamper Anthony K.
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