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High aspect ratio channel semiconductor device and method of manufacturing same

Номер патента: US20180082901A1
Опубликовано: 22-03-2018
Автор(ы): Bernardette Kunert, Niamh Waldron, Weiming Guo
Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC
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