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具有自加热结构的半导体器件、其制造方法和测试方法

Номер патента: CN102969301A
Опубликовано: 13-03-2013
Автор(ы): 柯家洋, 王琳松, 邱盈翰
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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