Integrated circuit system with carbon enhancement
Номер патента: SG146528A1
Опубликовано: 30-10-2008
Автор(ы): Johnny Widodo, Kevin S Petrarca, Lawrence A Clevenger, Li Wai-Kin, Liu Wuping
Принадлежит: Chartered Semiconductor Mfg, Ibm
Опубликовано: 30-10-2008
Автор(ы): Johnny Widodo, Kevin S Petrarca, Lawrence A Clevenger, Li Wai-Kin, Liu Wuping
Принадлежит: Chartered Semiconductor Mfg, Ibm
Реферат: INTEGRATED CIRCUIT SYSTEM WITH CARBON ENHANCEMENT An integrated circuit hard mask processing system is provided including providing a substrate having an integrated circuit; forming an interconnect layer over the integrated circuit; applying a low-K dielectric layer over the interconnect layer; forming a via opening through the low-K dielectric layer to the interconnect layer; and forming a carbon implant region around the via opening, a trench opening, or a combination thereof, for protecting the low-K dielectric layer.
Integrated circuit system with carbon enhancement
Номер патента: SG165342A1. Автор: Li Wai-Kin,Liu Wuping,Lawrence A Clevenger,Kevin S Petrarca,Johnny Widodo. Владелец: Globalfoundries Sg Pte Ltd. Дата публикации: 2010-10-28.