Mems device built on substrate with ruthenium based contact surface material
Номер патента: EP4126754A1
Опубликовано: 08-02-2023
Автор(ы): Andrew Minnick, Christopher F. Keimel, Xu Zhu
Принадлежит: Menlo Microsystems Inc
Опубликовано: 08-02-2023
Автор(ы): Andrew Minnick, Christopher F. Keimel, Xu Zhu
Принадлежит: Menlo Microsystems Inc
Реферат: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum- group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.
MEMS device having decreased contact resistance
Номер патента: US12077431B2. Автор: Mickael Renault,Shibajyoti Ghosh DASTIDER,Jacques Marcel MUYANGO. Владелец: Qorvo US Inc. Дата публикации: 2024-09-03.