Vertical led with conductive vias
Номер патента: EP2176891A1
Опубликовано: 21-04-2010
Автор(ы): James Stuart Mckenzie, Majd Zoorob
Принадлежит: Photonstar Led Ltd
Опубликовано: 21-04-2010
Автор(ы): James Stuart Mckenzie, Majd Zoorob
Принадлежит: Photonstar Led Ltd
Реферат: A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVMR. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.
Vertical LED array element integrating LED epitaxial structures with LED package substrate
Номер патента: GB2540299A. Автор: Shyan Chen Jen. Владелец: Enraytek Optoelectronics Co Ltd. Дата публикации: 2017-01-11.