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Thermally Conductive Silicone Composition, Semiconductor Device, and Method for Manufacturing Semiconductor Device

Номер патента: KR102288665B1
Опубликовано: 11-08-2021
Автор(ы): 겐이치 츠지, 구니히로 야마다, 쇼타 아키바
Принадлежит: 신에쓰 가가꾸 고교 가부시끼가이샤
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Method for Making Solder-top Enhanced Semiconductor Device of Low Parasitic Packaging Impedance

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Semiconductor device and lead frame assembly/lead frame for making a semiconductor device

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Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device

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Structure and method for diminishing delamination of packaged semiconductor devices

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Semiconductor device package and method for manufacturing the same

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Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor

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Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

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Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

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Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device

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Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level

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Light emitting device, and method and apparatus for manufacturing same

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Process for manufacturing a semiconductor device and an intermediate product for the manufacture of a semiconductor device

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Method for forming step channel of semiconductor device

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Method for forming step channel of semiconductor device

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Method for aligning quantum dots and semiconductor device fabricated by using the same

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Methods for normalizing strain in a semiconductor device

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Methods for forming contact structures and semiconductor devices including forming a spacer structure into a base structure

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Semiconductor device, method of manufacturing thereof, signal transmission/reception method using such semiconductor device, and tester apparatus

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Silicon carbide semiconductor devices having nitrogen-doped interface

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Silicon carbide semiconductor devices having nitrogen-doped interface

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Semiconductor device metallization systems and methods

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Semiconductor device having stressor and method of fabricating the same

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Semiconductor arrangement having first semiconductor device over first shallow well having first conductivity type and second semiconductor device over second shallow well having second conductivity type and formation thereof

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Cooling mechanism having nanocapillary structure, semiconductor device provided with cooling mechanism, method for manufacturing same, and electronic device

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Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate

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Process for manufacturing a strained semiconductor device and corresponding strained semiconductor device

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Method for forming fine patterns in semiconductor device

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Method for forming metal wires in semiconductor device

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Method for forming isolation layer in semiconductor device

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Method for forming inner capacitor of semiconductor devices using oxide layers formed by the SACVD method

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Method for production of thin-film semiconductor device

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Method for Forming Super Contact in Semiconductor Device

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Method for fabricating silicide layers for semiconductor device

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Methods for cell boundary encroachment and semiconductor devices implementing the same

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Method for forming merged contact for semiconductor device

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Method for manufacturing mosfet on semiconductor device

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Method for manufacturing silicon carbide semiconductor device

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Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

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Method for forming capacitor, capacitor and semiconductor device

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Method for doping a fin-based semiconductor device

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Forming method for floating contact hole, and semiconductor device

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Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

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Method for forming word line of semiconductor device

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Method for fabricating isolation layer in semiconductor device

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Semiconductor device, semiconductor circuit, and method of controlling semiconductor device

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Semiconductor device, communication system, and method of manufacturing semiconductor device

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Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

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Method for forming buried bit line, semiconductor device having the same, and fabricating method thereof

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Semiconductor device, integrated circuit and method of forming a semiconductor device

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