Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device.

Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device

Номер патента: US11978627B2
Опубликовано: 07-05-2024
Автор(ы): Binbin Li, Bohsiang TSENG, Jiahao Zhang, Juiping LI, Mingxin Chen, Yao Huo
Принадлежит: Fujian Jingan Optoelectronics Co Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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